CN115756081A - Voltage stabilizing circuit based on current feedback - Google Patents
Voltage stabilizing circuit based on current feedback Download PDFInfo
- Publication number
- CN115756081A CN115756081A CN202211579045.XA CN202211579045A CN115756081A CN 115756081 A CN115756081 A CN 115756081A CN 202211579045 A CN202211579045 A CN 202211579045A CN 115756081 A CN115756081 A CN 115756081A
- Authority
- CN
- China
- Prior art keywords
- voltage
- mos tube
- mos
- current
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Continuous-Control Power Sources That Use Transistors (AREA)
Abstract
The invention discloses a voltage stabilizing circuit based on current feedback; the device comprises a sampling module, an adjusting module and a feedback control module, and specifically comprises a high-voltage MOS (metal oxide semiconductor) tube HV _ PM1, a high-voltage MOS tube HV _ PM2, a high-voltage MOS tube HV _ PM3 and a high-voltage MOS tube HV _ NM1, an ordinary-pressure MOS tube NM2, an ordinary-pressure MOS tube NM3 and an ordinary-pressure MOS tube NM4, a voltage-stabilizing diode Z1, a resistor R0, a resistor R1 and a resistor R3, a bias current I1, a bias current I2 and a bias current I3. The invention has the input voltage lower than the reverse breakdown voltage V of the voltage stabilizing diode Z1 Z1 When the voltage is higher than the input voltage, the output voltage is equal to the input voltage, and the voltage drop is small; when the voltage is high, the current flowing through the voltage stabilizing diode Z1 is sampled, the gate-source voltage difference of the MOS tube is adjusted through the feedback loop, the on-resistance of the MOS tube is changed, and the output voltage VOUT is stabilized at the reverse breakdown voltage V of the voltage stabilizing diode Z1 Z1 About 5.5V.
Description
Technical Field
The invention belongs to the technical field of electronic circuits, and particularly relates to a current feedback-based voltage stabilizing circuit.
Background
The voltage stabilizing circuit is a circuit which can keep the output voltage constant when the input voltage and the output load change, and is widely applied to various electronic devices.
The existing voltage stabilizing circuit needs larger load capacity, larger input voltage range, more complex circuit structure and larger power consumption to obtain constant output voltage, and has certain requirements on the manufacturing process.
At present, in a medium-power and low-power gate drive circuit, most of devices such as a normal voltage tube, a high voltage tube and a power tube are thin gate oxide devices, and the gate source withstand voltage value is about 5.5V. The smaller the on-resistance of the power tube in the gate driving circuit is, the better, and when the size of the power tube is fixed, the on-resistance is inversely proportional to the overdrive voltage (VGS-VTH), i.e., the higher the gate-source voltage is, the smaller the on-resistance is, the smaller the conduction loss is, and at the same time, the gate-source Voltage (VGS) cannot exceed the gate-source withstand voltage value thereof, so that it is necessary to generate a voltage as high as possible to supply power to the driving circuit on the premise of not exceeding the gate-source withstand voltage value of the device. In a grid driving circuit, the input voltage range is large, and in order to realize stable and reliable power supply, a voltage stabilizing circuit with a simple structure and a wide input range needs to be designed, when the input voltage of the voltage stabilizing circuit is lower than the withstand voltage (5.5V) of a device, the output voltage is approximately equal to the input voltage, and the voltage drop is small; when the input voltage is higher than the device withstand voltage (5.5V), the output voltage is stabilized at the device withstand voltage value (5.5V).
One of the current voltage stabilizing circuits is implemented by a low dropout regulator, as shown in fig. 1, which has a large input voltage range and a large load carrying capacity, but the linear regulator includes an error amplifier, which increases the complexity of the circuit and increases the design cost. The other is to adopt a mode of combining a voltage regulator tube and a triode to obtain output voltage, namely the voltage regulator tube voltage subtracts the conduction voltage VBE of the triode, namely the output voltage is not only dependent on the voltage of the voltage regulator tube, but also related to the conduction voltage of the triode, and simultaneously a large resistor (megaohm level) is required to be connected in series with the voltage regulator tube for current limiting, the current can be linearly increased along with the rise of an input power supply, and the quiescent current can be obviously increased when the input power supply voltage is high.
In summary, in the conventional voltage stabilizing circuit, the low dropout linear regulator has a complex circuit structure and high design cost; the voltage regulator tube and the triode are combined, so that more variables affect output, and static current linearly increases along with the increase of input voltage.
Therefore, the invention provides a voltage stabilizing circuit based on current feedback, which adopts a current feedback mode, and when the input voltage is low, the output voltage is approximately equal to the input voltage, and the voltage drop is small; when the input voltage is high, the output voltage is stabilized at about 5.5V (reverse breakdown voltage of the Zener diode), the circuit structure is simple, the manufacturing cost is low, the static current is small, the power consumption is low, and the circuit is suitable for a circuit system which needs constant voltage of about 5.5V.
Disclosure of Invention
The present invention is directed to a voltage regulator circuit based on current feedback to solve the above problems.
In order to achieve the purpose, the invention provides the following technical scheme: a voltage stabilizing circuit based on current feedback comprises a sampling module, an adjusting module and a feedback control module, and specifically comprises an MOS (metal oxide semiconductor) tube HV _ PM1, an MOS tube HV _ PM2, an MOS tube HV _ PM3, an MOS tube HV _ NM1, an MOS tube NM2, an MOS tube NM3, an MOS tube NM4, a voltage stabilizing diode Z1, a resistor R0, a resistor R1, a resistor R3, a bias current I1, a bias current I2 and a bias current I3;
the adjusting module only comprises the MOS tube HV _ PM3, and the grid electrode of the MOS tube HV _ PM3 is connected with the resistor R0 in the feedback control module at a point C;
the sampling module comprises a bias current I2, a bias current I3 and a voltage stabilizing diode Z1 which are connected with an output voltage VOUT, the bias current I3 is connected with a grid electrode and a drain electrode of an MOS tube NM4, a source electrode of the MOS tube NM4 is connected with a resistor R2 in series, the bias current I2 is connected with a drain electrode of the MOS tube NM3, a grid electrode of the MOS tube NM3 is connected with the grid electrode of the MOS tube NM4, a drain electrode of the MOS tube NM3 is connected with a resistor R1 in series, and an anode of the voltage stabilizing diode Z1 is connected with the resistor R1 in series and connected to a point A;
the feedback control module comprises a resistor R0 and a MOS tube HV _ PM2 connected with an input voltage VIN, the resistor R0 and the MOS tube HV _ PM2 are connected with a bias current I1 in a point C after being connected in parallel, a drain electrode of the MOS tube HV _ PM2 is connected with the bias current I1 in the point C, a grid electrode of the MOS tube HV _ PM2 is electrically connected with a grid electrode and a drain electrode of the MOS tube HV _ PM1 respectively, a drain electrode of the MOS tube HV _ PM1 is electrically connected with a drain electrode of the MOS tube HV _ NM1, a source electrode of the MOS tube HV _ NM1 is electrically connected with a drain electrode of the MOS tube NM1, a grid electrode of the MOS tube NM1 is connected with a grid electrode of the MOS tube NM2, and the grid electrode and the drain electrode of the MOS tube NM2 are connected with a drain electrode of the MOS tube NM3 in the sampling module.
Preferably, the voltage stabilizing circuit based on current feedback includes an input voltage VIN, GND and an output voltage VOUT, the input voltage VIN is a power supply voltage of a chip, the input voltage range is wide, the bias current I3 and the bias current I2 are nA-level bias currents, the bias current I1 is a uA-level bias current, where I3=12< -I1, and R2= R1< R0.
Preferably, the source of the MOS transistor HV _ PM3 is electrically connected to the input voltage VIN, the drain of the MOS transistor HV _ PM3 is electrically connected to the output voltage VOUT, the other end of the resistor R2 is electrically connected to the GND, the other end of the resistor R1 is electrically connected to the GND, the bias current I1 is output to the GND, the source of the MOS transistor HV _ PM2 is electrically connected to the input voltage VIN, the source of the MOS transistor HV _ PM1 is electrically connected to the input voltage VIN, the gate of the MOS transistor HV _ NM1 is electrically connected to the output voltage VOUT, the source of the MOS transistor NM1 is electrically connected to the GND, and the source of the MOS transistor NM2 is electrically connected to the GND.
Preferably, the adjusting module receives the input voltage VIN and adjusts the output voltage VOUT, and the sampling module samples a current signal from the output voltage VOUT through the zener diode Z1.
Preferably, the feedback control module controls the adjusting module to adjust the voltage according to the sampling current signal of the sampling module, so as to stabilize the output voltage.
Preferably, a capacitor C1 is electrically connected between the output voltage VOUT and the GND, and the capacitor C1 is used for reducing ripples of the output voltage VOUT.
Preferably, MOS transistor HV _ PM1, MOS transistor HV _ PM2, MOS transistor HV _ PM3, and MOS transistor HV _ NM1 belong to a high-voltage pipe, and MOS transistor NM1, MOS transistor NM2, MOS transistor NM3, and MOS transistor NM4 belong to a normal-voltage pipe.
Preferably, the voltage of the input voltage VIN is lower than the reverse breakdown voltage V of the zener diode Z1 Z1 When the voltage regulator diode Z1 is turned off, i.e. no current flows through the voltage regulator diode Z1, the currents flowing through the MOS transistor NM3 and the MOS transistor NM2 are I2a and I2b, respectively, and I2= I2a + I2b, because I3= I2, the MOS transistor NM3 and the MOS transistor NM4 have the same size, at this time, most of the current in the bias current I2 flows through the MOS transistor NM3, i.e. I2a divides most of the current in the bias current I2, and voltages at two ends of the resistor R1 and the resistor R2 are approximately equal, i.e. V is equal to V A Is approximately equal to V B The current I2b of the MOS tube NM2 in the feedback control module is very small, and the current Ip mirrored to the MOS tube HV _ PM2 through the MOS tube NM1 and the MOS tube HV _ PM1 is also very small. Since the current Ip flowing through the MOS transistor HV _ PM2 is small and I1= Ip + Ir, the bias current I1 mostly flows through the resistor R0, and the voltage difference VIN-V across the resistor R0 C Larger, i.e. the gate-source voltage difference VIN-V of the MOS transistor HV _ PM3 in the regulation module C When the MOS transistor HV _ PM3 is larger, the MOS transistor HV _ PM3 works in a linear region, and for the MOS transistor with determined size, the on-resistance of the MOS transistor is inversely proportional to the gate-source voltage difference, namely the larger the gate-source voltage difference is, the smaller the on-resistance is. Therefore, when the input voltage VIN is smaller than the reverse breakdown voltage V of the zener diode Z1 Z1 In time, the gate-source voltage difference of the MOS transistor HV _ PM3 is large, the on-resistance thereof is small, and the output voltage VOUT is approximately equal to the input voltage VIN.
Preferably, the voltage of the input voltage VIN is increased, and the output voltage VOUT is increased along with the input voltage VIN, when the output voltage VOUT exceeds the regulated voltage V of the zener diode Z1 Z1 When the voltage stabilizing diode Z1 flows current, the voltage difference between two ends of the resistor R1 is increasedLarge, i.e. V A And is increased. Because the MOS tube NM3 and the MOS tube NM4 are connected in a current mirror mode, the grid voltage of the MOS tube NM3 is clamped at a fixed value V A The increase causes the gate-source voltage thereof to decrease, so that the current I2a flowing through the MOS tube NM3 becomes smaller, the current I2b flowing through the MOS tube NM2 in the feedback control module becomes larger, the current Ip mirrored to the MOS tube HV _ PM2 through the MOS tube NM1 and the MOS tube HV _ PM1 becomes larger, only a small part of the bias current I1 flows through the resistor R0, and the voltage difference VIN-V between two ends of the resistor R0 C The gate-source voltage difference VIN-V of the MOS tube HV _ PM3 in the adjusting module is reduced C As the on-resistance becomes smaller, the output voltage VOUT becomes lower.
Preferably, the input voltage VIN is always greater than the reverse breakdown voltage V of the zener diode Z1 Z1 When the output voltage VOUT exceeds V Z1 When the voltage stabilizing diode Z1 is in a zero-voltage state, the output voltage VOUT is reduced through feedback; when the output voltage VOUT drops to be less than the reverse breakdown voltage V of the Zener diode Z1 Z1 When the voltage stabilizing diode Z1 does not have current, the feedback control module enables the grid-source voltage difference of the MOS tube HV _ PM3 to be increased, the output voltage VOUT begins to rise again, the output voltage VOUT is repeated, the grid-source voltage difference of the MOS tube HV _ PM3 is adjusted through a feedback loop by sampling the current flowing through the voltage stabilizing diode Z1, and the output voltage VOUT is enabled to be at the reverse breakdown voltage V of the voltage stabilizing diode Z1 Z1 The vicinity fluctuates, and a voltage of about 5.5V is obtained.
Compared with the prior art, the invention has the beneficial effects that:
the invention relates to a voltage stabilizing circuit based on current feedback, which samples output voltage through a voltage stabilizing diode without generating reference voltage by an additional circuit;
the invention has wide input voltage range, and the reverse breakdown voltage V of the input voltage is lower than that of the voltage stabilizing diode Z1 Z1 When the voltage is higher than the input voltage, the output voltage is equal to the input voltage, and the voltage drop is small; when the input voltage is high, the grid source voltage of the MOS tube is adjusted through a feedback loop by sampling the current flowing through the voltage stabilizing diode Z1The on-resistance of the MOS tube is changed to stabilize the output voltage VOUT at the reverse breakdown voltage V of a voltage stabilizing diode Z1 Z1 (about 5.5V) to generate a voltage as high as possible without exceeding the gate-source voltage resistance of the device;
the circuit structure of the invention can adopt smaller bias current to achieve the purpose of reducing power consumption, and meanwhile, because the constant current source is adopted for biasing, the quiescent current can not become larger along with the rise of the input power supply voltage, thus the invention is suitable for most circuit systems, and is especially suitable for being used in medium and small power grid drive circuits.
Drawings
FIG. 1 is a schematic diagram of a prior art circuit according to the present invention;
FIG. 2 is a schematic circuit diagram of the present invention;
FIG. 3 is a diagram illustrating the variation of the output voltage with the input voltage according to the present invention.
In the figure: 201. a sampling module; 202. an adjustment module; 203. and a feedback control module.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 2-3, the present invention provides a technical solution: a voltage stabilizing circuit based on current feedback comprises a sampling module 201, an adjusting module 202 and a feedback control module 203, and specifically comprises an MOS (metal oxide semiconductor) tube HV _ PM1, an MOS tube HV _ PM2, an MOS tube HV _ PM3, an MOS tube HV _ NM1, an MOS tube NM2, an MOS tube NM3, an MOS tube NM4, a voltage stabilizing diode Z1, a resistor R0, a resistor R1 and a resistor R3, a bias current I1, a bias current I2 and a bias current I3;
the adjusting module 202 only includes the MOS transistor HV _ PM3, and the gate of the MOS transistor HV _ PM3 is connected to the resistor R0 in the feedback control module 203 at a point C;
the sampling module 201 comprises the bias current I2, the bias current I3 and the zener diode Z1 connected with the output voltage VOUT, the bias current I3 is connected with the gate and the drain of the MOS transistor NM4, the source of the MOS transistor NM4 is connected in series with the resistor R2, the bias current I2 is connected with the drain of the MOS transistor NM3, the gate of the MOS transistor NM3 is connected with the gate of the MOS transistor NM4, the drain of the MOS transistor NM3 is connected in series with the resistor R1, and the positive electrode of the zener diode Z1 is connected in series with the resistor R1 and connected to the point a;
the feedback control module 203 comprises a resistor R0 and a MOS transistor HV _ PM2 connected with an input voltage VIN, the resistor R0 and the MOS transistor HV _ PM2 are connected in parallel with a bias current I1 at a point C, a drain of the MOS transistor HV _ PM2 and the bias current I1 are connected at the point C, a gate of the MOS transistor HV _ PM2 and a gate and a drain of the MOS transistor HV _ PM1 are electrically connected, respectively, a drain of the MOS transistor HV _ PM1 and a drain of the MOS transistor HV _ NM1 are electrically connected, a source of the MOS transistor HV _ NM1 and a drain of the MOS transistor NM1 are electrically connected, a gate of the MOS transistor NM1 and a gate of the MOS transistor NM2 are connected, and a gate and a drain of the MOS transistor NM2 and a drain of the MOS transistor NM3 in the sampling module 201 are connected.
In order to implement power supply and signal output of the system and implement setting of the bias current, in this embodiment, it is preferable that the voltage stabilizing circuit based on current feedback includes an input voltage VIN, GND and an output voltage VOUT, where the input voltage VIN is a supply voltage of the chip, an input voltage range is wide, the bias current I3 and the bias current I2 are bias currents in the nA level, and the bias current I1 is a bias current in the uA level, where I3=12< <i1, and R2= R1< R0.
In order to implement the power supply operation of the system, maintain the safety of the circuit, and implement the input and output of the signal, in this embodiment, preferably, the source of the MOS transistor HV _ PM3 is electrically connected to the input voltage VIN, the drain of the MOS transistor HV _ PM3 is electrically connected to the output voltage VOUT, the other end of the resistor R2 is electrically connected to the GND, the other end of the resistor R1 is electrically connected to the GND, the bias current I1 is output to the GND, the source of the MOS transistor HV _ PM2 is electrically connected to the input voltage VIN, the source of the MOS transistor HV _ PM1 is electrically connected to the input voltage VIN, the gate of the MOS transistor HV _ NM1 is electrically connected to the output voltage VOUT, the source of the MOS transistor NM1 is electrically connected to the GND, and the source of the MOS transistor NM2 is electrically connected to the GND.
In order to implement the sampling process on the current signal, in this embodiment, preferably, the adjusting module 202 receives the input voltage VIN, adjusts the output voltage VOUT, and the sampling module 201 samples the current signal from the output voltage VOUT through the zener diode Z1.
In order to realize the regulation and control according to the sampled current information, in this embodiment, preferably, the feedback control module 203 controls the adjusting module 202 to perform voltage adjustment according to the sampled current signal of the sampling module 201, so as to stabilize the output voltage.
In order to adjust the ripple of the output voltage VOUT, in this embodiment, preferably, a capacitor C1 is electrically connected between the output voltage VOUT and the GND, and the capacitor C1 is used for reducing the ripple of the output voltage VOUT.
In order to realize that the system can work under the condition of high-pressure input, in this embodiment, it is preferable that the MOS transistors HV _ PM1, HV _ PM2, HV _ PM3, and HV _ NM1 belong to a high-pressure pipe, and the MOS transistors NM1, NM2, NM3, and NM4 belong to a normal-pressure pipe.
The working principle and the working process of the invention are as follows: when the voltage of the input voltage VIN is lower than the reverse breakdown voltage V of the Zener diode Z1 Z1 When the voltage regulator diode Z1 is not turned on, that is, no current flows through the voltage regulator diode Z1, the currents flowing through the MOS transistor NM3 and the MOS transistor NM2 are I2a and I2b, respectively, and I2= I2a + I2b, because I3= I2, the MOS transistors NM3 and NM4 have the same size, most of the current in the bias current I2 flows through the MOS transistor NM3 at this time, that is, I2a divides most of the current in the bias current I2, and voltages at two ends of the resistor R1 and the resistor R2 are approximately equal, that is, V2 A Is approximately equal to V B The current I2b of the MOS transistor NM2 in the feedback control module 203 is small, and the current Ip mirrored to the MOS transistor HV _ PM2 through the MOS transistor NM1 and the MOS transistor HV _ PM1 is also small. Since the current Ip flowing through the MOS transistor HV _ PM2 is small and I1= Ip + Ir, the bias current I1 mostly flows through the resistor R0, and the voltage difference VIN-V across the resistor R0 C Larger, i.e. gate-source voltage difference VIN-V of MOS transistor HV _ PM3 in regulation module 202 C And when the MOS transistor HV _ PM3 is larger, the MOS transistor HV _ PM3 works in a linear region. For the MOS tube with determined size, the conduction impedance of the MOS tube is inversely proportional to the grid-source voltage difference, namely the larger the grid-source voltage difference is, the smaller the conduction impedance is, so when the input voltage VIN is smaller than the reverse breakdown voltage V of the voltage stabilizing diode Z1 Z1 Meanwhile, the gate-source voltage difference of the MOS transistor HV _ PM3 is large, the on-resistance thereof is small, and the output voltage VOUT is approximately equal to the input voltage VIN.
When the voltage of the input voltage VIN rises, the output voltage VOUT rises along with the input voltage VIN, and when the output voltage VOUT exceeds the regulated voltage V of the voltage-regulator diode Z1 Z1 When the voltage-stabilizing diode Z1 is in use, current flows through the voltage-stabilizing diode Z1, so that the voltage difference between two ends of the resistor R1 is increased, namely V A The MOS tube NM3 and the MOS tube NM4 are connected in a current mirror mode, the grid voltage of the MOS tube NM3 is clamped at a fixed value, V A The increase causes the gate-source voltage to decrease, so the current I2a flowing through the MOS transistor NM3 becomes smaller, the current I2b flowing through the MOS transistor NM2 in the feedback control module 203 becomes larger, the current Ip mirrored to the MOS transistor HV _ PM2 through the MOS transistor NM1 and the MOS transistor HV _ PM1 becomes larger, only a small part of the bias current I1 flows through the resistor R0, and the voltage difference VIN-V between the two ends of the resistor R0 C The gate-source voltage difference VIN-V of the MOS transistor HV _ PM3 in the regulation module 202 is reduced C As the on-resistance becomes smaller, the output voltage VOUT decreases.
When the input voltage VIN is always larger than the reverse breakdown voltage V of the zener diode Z1 Z1 When the output voltage VOUT exceeds V Z1 When the voltage stabilizing diode Z1 is in a zero-voltage state, the output voltage VOUT is reduced through feedback; when the output voltage VOUT drops to be less than the reverse breakdown voltage V of the Zener diode Z1 Z1 In the meantime, no current flows through the zener diode Z1, the feedback control module 203 increases the gate-source voltage difference of the MOS transistor HV _ PM3, and the output voltage VOUT starts to flow againRising, repeating the steps, and adjusting the gate-source voltage difference of the MOS transistor HV _ PM3 through a feedback loop by sampling the current flowing through the Zener diode Z1 to enable the output voltage VOUT to be in the reverse breakdown voltage V of the Zener diode Z1 Z1 The vicinity fluctuates, and a voltage of about 5.5V is obtained.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. The utility model provides a voltage stabilizing circuit based on current feedback which characterized in that: the device comprises a sampling module (201), an adjusting module (202) and a feedback control module (203), and specifically comprises an MOS (metal oxide semiconductor) tube HV _ PM1, an MOS tube HV _ PM2, an MOS tube HV _ PM3 and an MOS tube HV _ NM1, the MOS tube NM2, the MOS tube NM3 and an MOS tube NM4, a voltage stabilizing diode Z1, a resistor R0, a resistor R1 and a resistor R3, a bias current I1, a bias current I2 and a bias current I3;
the adjusting module (202) only comprises the MOS tube HV _ PM3, and the grid electrode of the MOS tube HV _ PM3 is connected with the resistor R0 in the feedback control module (203) at a point C;
the sampling module (201) comprises a bias current I2, a bias current I3 and a voltage stabilizing diode Z1 which are connected with an output voltage VOUT, the bias current I3 is connected with a grid electrode and a drain electrode of an MOS tube NM4, a source electrode of the MOS tube NM4 is connected with a resistor R2 in series, the bias current I2 is connected with a drain electrode of the MOS tube NM3, a grid electrode of the MOS tube NM3 is connected with a grid electrode of the MOS tube NM4, a drain electrode of the MOS tube NM3 is connected with the resistor R1 in series, and a positive electrode of the voltage stabilizing diode Z1 is connected with the resistor R1 in series and connected to a point A;
the feedback control module (203) comprises a resistor R0 and a MOS tube HV _ PM2 connected with an input voltage VIN, the resistor R0 and the MOS tube HV _ PM2 are connected with a bias current I1 in a point C after being connected in parallel, a drain electrode of the MOS tube HV _ PM2 is connected with the bias current I1 in the point C, a grid electrode of the MOS tube HV _ PM2 is electrically connected with a grid electrode and a drain electrode of the MOS tube HV _ PM1 respectively, a drain electrode of the MOS tube HV _ PM1 is electrically connected with a drain electrode of the MOS tube HV _ NM1, a source electrode of the MOS tube HV _ NM1 is electrically connected with the drain electrode of the MOS tube NM1, a grid electrode of the MOS tube NM1 is connected with the grid electrode of the MOS tube NM2, and a grid electrode and a drain electrode of the MOS tube NM2 are connected with a drain electrode of the MOS tube NM3 in the sampling module (201).
2. The current feedback based voltage regulator circuit of claim 1, wherein: the voltage stabilizing circuit based on current feedback comprises input voltage VIN, GND and output voltage VOUT, wherein the input voltage VIN is the power supply voltage of the chip, and the input voltage range is large; the bias current I3 and the bias current I2 are in the nA level, and the bias current I1 is in the uA level, where I3=12 and are formed by a bundle I1, and R2= R1< R0.
3. The current feedback based voltage regulator circuit of claim 2, wherein: the source electrode of MOS pipe HV _ PM3 with input voltage VIN electric connection, the drain electrode of MOS pipe HV _ PM3 with output voltage VOUT electric connection, the other end electric connection of resistance R2 GND, the other end electric connection of resistance R1 GND, bias current I1 exports GND, the source electrode of MOS pipe HV _ PM2 with input voltage VIN electric connection, the source electrode of MOS pipe HV _ PM1 with input voltage VIN electric connection, MOS pipe HV _ NM1 grid with output voltage VOUT electric connection, the source electrode of MOS pipe NM1 with GND electric connection, the source electrode of MOS pipe NM2 with GND electric connection.
4. The current feedback based voltage regulator circuit of claim 1, wherein: the adjusting module (202) receives the input voltage VIN and adjusts the output voltage VOUT; the sampling module (201) samples a current signal from the output voltage VOUT through the zener diode Z1.
5. The current feedback based voltage regulator circuit of claim 4, wherein: the feedback control module (203) controls the adjusting module (202) to adjust the voltage according to the sampling current signal of the sampling module (201) so as to stabilize the output voltage.
6. The current feedback based voltage regulator circuit of claim 1, wherein: output voltage VOUT with electric connection has electric capacity C1 between the GND, electric capacity C1 is used for reducing output voltage VOUT's ripple.
7. The current feedback based voltage regulator circuit of claim 1, wherein: the MOS pipe HV _ PM1, the MOS pipe HV _ PM2, the MOS pipe HV _ PM3 and the MOS pipe HV _ NM1 belong to a high-voltage pipe, the MOS pipe NM1, the MOS pipe NM2, the MOS pipe NM3 and the MOS pipe NM4 belong to a normal-voltage pipe.
8. The current feedback based voltage regulator circuit of claim 2, wherein: when the voltage of the input voltage VIN is lower than the reverse breakdown voltage V of the Zener diode Z1 Z1 When the voltage regulator diode Z1 is turned off, i.e. no current flows through the voltage regulator diode Z1, the currents flowing through the MOS transistor NM3 and the MOS transistor NM2 are I2a and I2b, respectively, and I2= I2a + I2b, because I3= I2, the MOS transistor NM3 and the MOS transistor NM4 have the same size, at this time, most of the current in the bias current I2 flows through the MOS transistor NM3, i.e. I2a divides most of the current in the bias current I2, and voltages at two ends of the resistor R1 and the resistor R2 are approximately equal, i.e. V is equal to V A Is approximately equal to V B The current I2b of the MOS tube NM2 in the feedback control module (203) is small, and the current Ip mirrored to the MOS tube HV _ PM2 through the MOS tube NM1 and the MOS tube HV _ PM1 is also small. Since the current Ip flowing through the MOS transistor HV _ PM2 is small and I1= Ip + Ir, the bias current I1 mostly flows through the resistor R0, and the voltage difference VIN-V across the resistor R0 C Larger, i.e. in the regulating module (202)The grid-source voltage difference VIN-V of the MOS tube HV _ PM3 C The MOS transistor HV _ PM3 is larger, at the moment, the MOS transistor HV _ PM3 works in a linear region, and for the MOS transistor with the determined size, the conduction impedance of the MOS transistor is inversely proportional to the gate-source voltage difference, namely the larger the gate-source voltage difference is, the smaller the conduction impedance is. So when the input voltage VIN is smaller than the reverse breakdown voltage V of the zener diode Z1 Z1 In time, the gate-source voltage difference of the MOS transistor HV _ PM3 is large, the on-resistance thereof is small, and the output voltage VOUT is approximately equal to the input voltage VIN.
9. The voltage regulator circuit based on current feedback of claim 2, wherein: when the voltage of the input voltage VIN rises, the output voltage VOUT rises along with the input voltage VIN, and when the output voltage VOUT exceeds the regulated voltage V of the zener diode Z1 Z1 When the voltage stabilizing diode Z1 flows current, the voltage difference between two ends of the resistor R1 is increased, namely V A And is increased. Because the MOS tube NM3 and the MOS tube NM4 are connected in a current mirror mode, the grid voltage of the MOS tube NM3 is clamped at a fixed value V A The increase causes the gate-source voltage thereof to decrease, so that the current I2a flowing through the MOS tube NM3 becomes smaller, the current I2b flowing through the MOS tube NM2 in the feedback control module (203) becomes larger, the current Ip mirrored to the MOS tube HV _ PM2 through the MOS tube NM1 and the MOS tube HV _ PM1 becomes larger, only a small part of the bias current I1 flows through the resistor R0, and the voltage difference VIN-V across the resistor R0 C The gate-source voltage difference VIN-V of the MOS tube HV _ PM3 in the adjusting module (202) is reduced C The on-resistance becomes large as the voltage becomes small, and the output voltage VOUT decreases.
10. The current feedback based voltage regulator circuit of claim 2, wherein: the input voltage VIN is always greater than the reverse breakdown voltage V of the zener diode Z1 Z1 When the output voltage VOUT exceeds V Z1 When the current flows through the voltage stabilizing diode Z1, the output voltage VOUT is reduced through feedback; when the output voltage VOUT drops to be smaller than the Zener diode Z1Reverse breakdown voltage V Z1 When the voltage stabilizing diode Z1 does not have current, the feedback control module (203) enables the grid-source voltage difference of the MOS tube HV _ PM3 to be increased, the output voltage VOUT begins to rise again, and the current flowing through the voltage stabilizing diode Z1 is sampled repeatedly, the grid-source voltage difference of the MOS tube HV _ PM3 is adjusted through a feedback loop, and the output voltage VOUT is enabled to be under the reverse breakdown voltage V of the voltage stabilizing diode Z1 Z1 The vicinity fluctuates, and a voltage of about 5.5V is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211579045.XA CN115756081A (en) | 2022-12-07 | 2022-12-07 | Voltage stabilizing circuit based on current feedback |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211579045.XA CN115756081A (en) | 2022-12-07 | 2022-12-07 | Voltage stabilizing circuit based on current feedback |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115756081A true CN115756081A (en) | 2023-03-07 |
Family
ID=85345161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211579045.XA Pending CN115756081A (en) | 2022-12-07 | 2022-12-07 | Voltage stabilizing circuit based on current feedback |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115756081A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116978904A (en) * | 2023-07-27 | 2023-10-31 | 屹晶微电子(台州)有限公司 | Power supply voltage stabilizing circuit and integrated chip |
-
2022
- 2022-12-07 CN CN202211579045.XA patent/CN115756081A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116978904A (en) * | 2023-07-27 | 2023-10-31 | 屹晶微电子(台州)有限公司 | Power supply voltage stabilizing circuit and integrated chip |
| CN116978904B (en) * | 2023-07-27 | 2024-02-23 | 屹晶微电子(台州)有限公司 | Power supply voltage stabilizing circuit and integrated chip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104699153B (en) | Low-dropout linear regulator | |
| CN112068627B (en) | Voltage output regulating module | |
| CN108508953B (en) | Novel slew rate enhancement circuit and low dropout regulator | |
| US9977441B2 (en) | Low dropout regulator and related method | |
| CN108508958B (en) | Pseudo-digital low dropout linear regulator and power management chip | |
| CN113067469B (en) | Quick response loop compensation circuit, loop compensation chip and switching power supply | |
| CN110928358B (en) | Low dropout voltage regulating circuit | |
| US9893618B2 (en) | Voltage regulator with fast feedback | |
| CN117155123B (en) | Transient jump overshoot suppression circuit suitable for LDO and control method thereof | |
| CN114200994B (en) | Low dropout linear regulator and laser ranging circuit | |
| CN213934662U (en) | Linear voltage stabilizing circuit without off-chip capacitor | |
| CN215599582U (en) | Buffer circuit for improving transient response capability of LDO (low dropout regulator) | |
| CN117130421B (en) | NLDO power tube current sampling circuit and method suitable for double-rail input | |
| CN114647271B (en) | LDO circuit, control method, chip and electronic equipment | |
| CN115756081A (en) | Voltage stabilizing circuit based on current feedback | |
| CN115913202B (en) | Quick power-on protection circuit for high-voltage circuit | |
| CN110825153A (en) | Low dropout regulator with high PSRR | |
| CN115309221A (en) | Fast transient response enhancement circuit applied to LDO (low dropout regulator) | |
| CN212367130U (en) | Switching power supply circuit | |
| CN112667019A (en) | Apply to soft start circuit of power saving province area of LDO | |
| CN111399579A (en) | Constant voltage difference generating circuit and driving device | |
| CN221406392U (en) | Low-dropout linear voltage regulator and microprocessor | |
| CN114115415B (en) | Low dropout linear voltage stabilizing circuit | |
| CN211603986U (en) | Constant voltage difference generating circuit and driving device | |
| CN114879795B (en) | Low dropout regulator capable of realizing voltage domain output |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |