CN115747802A - Composite chemical etching processing device and processing method - Google Patents
Composite chemical etching processing device and processing method Download PDFInfo
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- CN115747802A CN115747802A CN202210683728.3A CN202210683728A CN115747802A CN 115747802 A CN115747802 A CN 115747802A CN 202210683728 A CN202210683728 A CN 202210683728A CN 115747802 A CN115747802 A CN 115747802A
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Abstract
The invention relates to the field of micro-processing, and particularly discloses a composite chemical etching processing device and a processing method, wherein the composite chemical etching processing device comprises a mask unit, a synchronous hydrophilic unit and a chemical etching unit, the mask unit is attached to the surface of a workpiece, and the synchronous hydrophilic unit carries out hydrophilic treatment on the mask unit and a workpiece processing area exposed by a mask pattern, so that the composite chemical etching processing process and the hydrophilic effect are synchronized in real time, and the processing area of the workpiece has excellent working fluid mass transfer and circulation capacities; the real-time hydrophilic treatment effect ensures that the etching solution has good mass transfer and updating capacity in a workpiece processing area all the time in the etching processing process, is beneficial to breaking through the manufacturing bottleneck of the traditional mask chemical etching processing on the processing scale and the processing depth, realizes the preparation of the microstructure with high depth-diameter ratio, and improves the processing quality and the processing efficiency of the microstructure.
Description
Technical Field
The invention relates to the field of micromachining, and particularly discloses a composite chemical etching processing device and a processing method.
Background
The surface functional microstructure is beneficial to improving multiple performances of a medical implant, a mask process is combined with chemical etching processing and has extremely wide application in the fields of manufacturing of the surface functional microstructure of the implant and the like, but with the rapid development of science and technology, the surface functional microstructure of the implant not only needs to meet more functions, but also puts forward new requirements on the aspect of size, the limit size and precision capable of being processed directly influence the functions which can be realized by the implant, and the requirement of the current new processing scale is dozens of micrometers to several micrometers or even nano-scale.
The mask chemical etching processing and other processes mainly carry out micro-processing on a workpiece exposed out of a gap of a mask in a chemical etching mode through the constraint of a mask structure, but when a structure with the scale of a few microns or less is processed, due to the hydrophobicity of the mask, chemical etching liquid is difficult to enter a processing area, the mass transfer of the etching liquid in the processing process is influenced, even the processing cannot be stably and continuously carried out, and the processing performance is finally influenced.
In view of the above problems, researchers have conducted a lot of research on mask chemical etching process technology, and some researchers have adopted external field assistance, such as ultrasonic vibration, magnetic field, etc., to promote mass transfer of chemical etching liquid in a micro mask structure, so as to improve the renewing capability of the chemical etching liquid and improve the processing performance. However, the external field assist is difficult to control, which is likely to cause turbulence disturbance of the chemical etching solution, and adversely affects the processing stability.
In addition, researchers have also promoted the mass transfer and flow of the chemical etching solution by changing the flow field. However, at higher flushing pressure, the mask structure is easily damaged, and higher requirements on mask performance are also provided. Therefore, the practical processing effect of the above method is not ideal.
The effect of improving the processing quality and the like is not obvious for improving the processing performance of the microstructure with the processing size of several micrometers or less. Further application and development of the mask chemical etching processing technology in the engineering field are restricted to a certain extent.
Disclosure of Invention
In order to overcome the defects and shortcomings in the prior art, the invention aims to provide a composite chemical etching processing device and a processing method, which solve the problems of mass transfer and difficult updating of a chemical etching solution in a tiny gap in the processing process through synchronous hydrophilic treatment on a workpiece surface mask unit and a workpiece processing area, and break through the limitations of the existing mask chemical etching processing technology on the processing scale and the processing depth of a workpiece. Synchronous hydrophilization of the mask unit and the workpiece processing area enables the workpiece processing area to have excellent mass transfer capacity of the chemical etching liquid, the preparation of the high depth-diameter ratio microstructure is facilitated, and the processing quality and the processing efficiency of the workpiece are improved.
In order to achieve the above object, the composite chemical etching apparatus of the present invention comprises a mask unit, a synchronous hydrophilization unit, and a chemical etching unit, wherein the mask unit is attached to a workpiece, the mask unit is provided with a mask pattern for exposing a workpiece processing area, and the chemical etching unit is used for delivering a chemical etching solution to the workpiece processing area exposed by the mask pattern; the synchronous hydrophilization unit carries out real-time hydrophilization treatment on the mask unit and the workpiece processing area, so that the etching liquid can stably transfer and flow in the workpiece processing area in the etching processing process.
The plasma processor acts on the two electrodes to enable the two electrodes to ionize gas in the spray gun piece to form plasma, and the plasma sprayed by the spray gun piece acts on the mask unit and the workpiece processing area to enable the mask unit and the workpiece processing area to achieve synchronous hydrophilization in the chemical etching processing process.
The mask unit is a movable mask, and the movable mask is detachably connected with the workpiece and can be reused. Plasma sprayed out by the synchronous hydrophilization unit acts on the movable mask and the workpiece processing area, so that the movable mask and the workpiece processing area realize real-time hydrophilization in the chemical etching processing process.
The mask unit can be manufactured and molded through a photoetching method, the mask unit is fixedly attached to the surface of a workpiece, and plasma sprayed by the synchronous hydrophilization unit acts on the mask unit and the workpiece processing area, so that the mask unit and the workpiece processing area are hydrophilized in real time in the chemical etching processing process.
The mask unit can be manufactured and molded through a printing method, the mask unit is fixedly attached to the surface of the workpiece, and plasma sprayed by the synchronous hydrophilization unit acts on the mask unit and the workpiece processing area, so that the mask unit and the workpiece processing area are hydrophilized in real time in the chemical etching processing process.
The chemical etching unit comprises a chemical etching container, a clamp, a liquid storage container, a pump piece, a filter and a spray head piece, wherein the chemical etching container is used for accommodating the clamp and chemical etching liquid, the clamp is used for positioning a workpiece, the spray head piece is sleeved on the outer side of the spray gun piece, and the spray head piece is provided with a plurality of liquid outlet holes arranged in an array; the chemical etching container is communicated with the liquid storage container, the pump piece is communicated with the liquid storage container, chemical etching liquid in the liquid storage container is sucked by the pump piece and filtered by the filter and then is conveyed to a position between the spray gun piece and the spray head piece, and the chemical etching liquid is synchronously sprayed out to a workpiece processing area through the liquid outlet hole along with plasma sprayed out of the spray gun piece to achieve stable and continuous etching removal under a microscale.
In order to achieve the above object, the present invention provides a composite chemical etching method, comprising the steps of:
arranging a mask unit on the workpiece, wherein the mask unit is provided with a mask pattern, and the mask pattern is used for exposing a workpiece processing area, namely the mask pattern exposes a microstructure required to be processed by the workpiece;
spraying chemical etching liquid to the mask unit and the workpiece processing area exposed by the mask pattern through the spray head piece to realize chemical etching processing on the workpiece processing area exposed by the mask pattern;
the plasma sprayed by the plasma processor of the synchronous hydrophilization unit acts on the mask unit and the workpiece processing area, so that the workpiece processing area exposed by the mask unit and the mask pattern is hydrophilized in real time in the chemical etching process.
Wherein, still include the following step:
respectively connecting the positive electrode and the negative electrode of the plasma processor with a first electrode and a second electrode which are positioned in the spray gun piece;
the gas source inputs gas medium into the spray gun component;
the first electrode and the second electrode ionize gas between the two electrodes in the spray gun part into plasma under the action of gas glow discharge;
the plasma sprayed by the spray gun piece and the chemical etching liquid sprayed by the spray head piece synchronously act on the mask unit and the processing area to realize real-time hydrophilic treatment.
Wherein, still include the following step:
the movable mask is manufactured by a mechanical processing method, the movable mask is used as a mask unit, the movable mask model part is detachably attached to a workpiece, and a plasma processor hydrophilizes a workpiece processing area exposed by the movable mask and a mask pattern in real time.
Wherein, still include the following step:
the mask unit is processed by photolithography or printing, and is fixedly attached to the surface of the workpiece.
The invention has the beneficial effects that: the synchronous hydrophilization treatment of the mask units and the workpiece processing areas exposed by the mask patterns breaks through the manufacturing bottleneck of the existing mask processing technology on the processing scale and the processing depth of the workpiece, and the synchronous hydrophilization of the workpiece processing areas exposed by the mask units and the mask patterns enables the chemical etching liquid of the workpiece processing areas exposed by the mask patterns to still have excellent mass transfer capacity in the etching process, the processing and manufacturing of the high-depth-diameter-ratio microstructures are realized, and the processing quality and the processing efficiency of the workpiece are improved.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of the structure of a simultaneous hydrophilization unit of the present invention;
FIG. 3 is a schematic view of the construction of the spray gun assembly of the present invention;
FIG. 4 is a schematic view of the construction of the spray gun assembly and the nozzle assembly of the present invention;
FIG. 5 is a schematic structural diagram of a chemical etching unit according to the present invention;
FIG. 6 is a schematic diagram of the structure of the coating and hydrophilic coating process of the photolithography machine of the present invention;
FIG. 7 is a schematic structural diagram of a process of printing a common ink layer and a hydrophilic coating layer by the screen printing apparatus according to the present invention;
FIG. 8 is a schematic structural diagram of a mask unit and a hydrophilic coating process according to the present invention.
The reference numerals include:
1-Simultaneous hydrophilization Unit 2-chemical etching Unit 3-workpiece
4-plasma treatment machine 5-first electrode 6-second electrode
7-spray gun piece 8-gas source 9-main gun body
11-nozzle head 12-chemical etching container 13-liquid storage container
14-pump body 15-filter 16-nozzle part
100-mask unit 101-hydrophilic coating 102-common ink layer
103-wire mesh sheet 104-mask part.
Detailed Description
For the understanding of those skilled in the art, the present invention will be further described with reference to the following examples and drawings, which are not intended to limit the present invention.
Referring to fig. 1 to 8, the composite chemical etching apparatus of the present invention includes a mask unit, a synchronous hydrophilization unit 1 and a chemical etching unit 2, wherein the mask unit is pre-disposed on a workpiece 3, the mask unit is provided with a mask pattern for exposing a processing area of the workpiece, the mask pattern is a hollow area disposed on the mask unit, and the number of the mask patterns may be multiple; the chemical etching unit 2 is used for delivering a chemical etching solution to the workpiece processing area exposed by the mask pattern, and performing chemical etching processing on the workpiece by means of the chemical etching solution.
By arranging the mask unit on the workpiece 3 in advance, the working fluid (i.e. the chemical etching fluid) always has excellent mass transfer capacity in the processing process through the synchronous hydrophilization treatment on the mask unit and the workpiece processing area exposed by the mask pattern, the processes of flowing, mass transfer and the like of the working fluid can be stably carried out without additional external field assistance, the working fluid is timely supplied to the processing area, the stability and the continuity of the etching processing process are improved, the manufacturing bottleneck of the existing mask chemical etching processing technology on the processing scale and the processing depth of the workpiece is broken through the synchronous hydrophilization treatment on the mask unit on the workpiece 3 and the workpiece processing area exposed by the mask pattern, meanwhile, the preparation of the high-depth-diameter-ratio microstructure can be realized through the updating capacity of the working fluid with excellent hydrophilic mask, and the processing quality and the processing efficiency of the workpiece 3 are improved.
The mask unit 100 is arranged on a workpiece, the synchronous hydrophilization unit 1 comprises a plasma processor 4, a first electrode 5, a second electrode 6, a spray gun piece 7 and a gas source 8, wherein the first electrode 5 and the second electrode 6 are both positioned in the spray gun piece 7, the positive electrode and the negative electrode of the plasma processor 4 are respectively connected and communicated with the first electrode 5 and the second electrode 6, the gas source 8 is communicated with the spray gun piece 7, and the gas source 8 is used for conveying a gas medium to the spray gun piece 7.
In actual use, the plasma processor 4 acts on the two electrodes to make the two electrodes ionize the gas in the spray gun part 7 to form plasma, preferably, the plasma is cold plasma, but not thermal plasma, and the plasma sprayed from the spray gun part 7 acts on the mask unit 100 and the workpiece 3 exposed from the mask gap to realize synchronous hydrophilization treatment, so that the mask unit is hydrophilized to form the hydrophilic coating 101, and simultaneously, real-time hydrophilization of the workpiece processing area is realized.
The spray gun part 7 has a main gun body 9, a plurality of nozzle heads 11 respectively communicated with the main gun body 9, the main gun body 9 is substantially a hollow cylinder, the nozzle heads 11 are substantially hollow small tubes, and the central axes of the plurality of nozzle heads 11 are crosswise arranged so that the central axes of two adjacent nozzle heads 11 are arranged at an included angle, for example, the included angle between the central axes of two adjacent nozzle heads 11 is an acute angle, and the included angle between the central axes of two adjacent nozzle heads 11 can be 20-60 degrees according to actual requirements.
The first electrode 5 and the second electrode 6 are both positioned in the main gun body 9, the first electrode 5 and the second electrode 6 are arranged at intervals, the first electrode 5 and the second electrode 6 are arranged in parallel, and plasmas sprayed by the two nozzle heads 11 arranged in an array respectively act on different mask pattern parts of the workpiece 3 to form the hydrophilic coating 101.
According to actual needs, the mask unit can be manufactured by machining through a machining system, the machining system can be a numerical control micro machining machine tool, a laser machining device and the like according to actual needs, the machining system machines a mask raw material part into a mask part 104 through machining modes such as mechanical cutting, micro drilling, milling and the like, the mask part 104 is detachably attached to the workpiece 3, and for example, the mask part 104 is fixed on the workpiece 3 through mechanical attachment or glue adhesion. The simultaneous hydrophilization unit 1 performs simultaneous hydrophilization on the mask blank 104 and the workpiece processing region exposed by the mask blank region of the mask blank 104.
Through the structural arrangement of the mask part 104, after one workpiece 3 is processed, the mask part 104 can be detached from the workpiece 3, and then the mask part 104 is arranged on the other workpiece 3, so that on one hand, the mask part 104 is recycled, on the other hand, the processing and manufacturing cost of the workpiece 3 is reduced, and the development trend of energy conservation and environmental protection is met.
According to actual needs, the mask unit may be manufactured by photolithography, for example, by using a photolithography machine, which is a conventional art and is not described herein, to manufacture a hydrophilized mask unit by performing a hydrophilization treatment on the photomask by the plasma processor 4 of the simultaneous hydrophilization unit 1 on the basis of the prepared photomask.
Furthermore, the mask unit may be manufactured by a printing method, for example, by printing the mask unit using a screen printing apparatus, which is a conventional technique and will not be described in detail herein, and printing the ink layer 102 on the workpiece 3 by using a screen plate 103 of the screen printing apparatus, and then performing a hydrophilization treatment on the ink layer 102 by using the plasma processor 4 of the simultaneous hydrophilization unit 1, thereby manufacturing a hydrophilized mask unit.
The chemical etching unit 2 comprises a chemical etching container 12, a clamp, a liquid storage container 13, a pump piece 14, a filter 15 and a spray head piece 16, wherein the chemical etching container 12 is used for accommodating the clamp and chemical etching liquid, the clamp is used for positioning the workpiece 3 in the chemical etching container 12, poor processing caused by movement of the workpiece 3 relative to the chemical etching container 12 is avoided, preferably, the workpiece 3 is immersed in the chemical etching liquid, the liquid storage container 13 is communicated with the chemical etching container 12, the spray head piece 16 is sleeved on the outer side of the spray gun piece 7, and the spray head piece 16 is provided with a plurality of liquid outlet holes arranged in an array. Preferably, the plurality of liquid outlet holes can be arranged in a rectangular array or an annular array.
The pump member 14 is communicated with the liquid storage container 13, the pump member 14 pumps the chemical etching liquid in the liquid storage container 13, the chemical etching liquid in the liquid storage container 13 is filtered by the filter 15 and then is input between the spray gun member 7 and the spray head member 16, the filter 15 is used for filtering particle impurities, processing products and the like mixed in the chemical etching liquid, the chemical etching liquid acts on the workpiece 3 through the liquid outlet hole along with plasma sprayed by the spray gun member 7, and the workpiece 3 is subjected to chemical etching removal processing while being subjected to plasma surface hydrophilization processing. In addition, according to actual needs, the spray gun piece 7 and the spray head piece 16 can be arranged in a shared mode, namely the spray gun piece and the spray head piece are combined into a whole, and the overall structural design is simplified.
The chemical etching liquid pumped from the liquid storage container 13 by the pump element 14 flows into the passage between the torch member 7 and the head member 16 through the filter 15, and a chemical etching liquid-plasma mixture is formed with plasma at the bottom of the passage between the torch member 7 and the head member 16 to flow out, and finally, the chemical etching removal of the workpiece processing region is performed while performing the surface hydrophilization treatment by plasma. Through the composite process, the synchronous and stable proceeding of the hydrophilization treatment of the plasma surface and the chemical etching processing of the workpiece 3 is realized. The hydrophilization treatment and the chemical etching may be alternately performed according to the actual conditions.
In this embodiment, the spray head member 16 has a blind hole, the spray gun member 7 is located in the blind hole, the liquid outlet holes are arranged on the bottom wall of the blind hole and communicated with the blind hole, the liquid outlet holes penetrate through the bottom wall of the blind hole, the liquid outlet holes are arranged on the bottom wall of the blind hole in an array manner, and the liquid outlet holes can be arranged on the bottom wall of the blind hole in a rectangular array or an annular array manner according to actual needs; the aperture of the blind hole is larger than the outer diameter of the spray gun piece 7, an annular gap formed between the outer side surface of the spray gun piece 7 and the inner hole surface of the blind hole is communicated with the filter 15, and the chemical etching solution is injected into the annular gap and is sprayed out of the plurality of liquid outlet holes onto the workpiece 3.
In order to achieve the above object, the composite chemical etching processing method of the present invention comprises the steps of:
presetting a mask unit on the surface of the workpiece 3, wherein the mask unit is provided with a mask pattern, and a hollow-out area of the mask pattern is used for exposing a workpiece processing area;
the plasma processor of the simultaneous hydrophilization unit 1 performs real-time hydrophilization on the mask unit and the workpiece processing region exposed by the mask pattern.
The chemical etching liquid is sprayed to the mask unit and the exposed workpiece processing area through the spray head piece 16, and by means of the real-time hydrophilic property of the mask unit and the workpiece processing area, the chemical etching liquid can fully flow to the processing area, so that the chemical etching liquid is fully contacted with the workpiece processing area, and due to the real-time hydrophilic property, the etching liquid in the workpiece processing area has excellent mass transfer and updating capacity all the time in the etching processing process.
By carrying out synchronous hydrophilic treatment on the mask unit and the workpiece processing area on the workpiece 3, the manufacturing bottlenecks of the existing mask chemical etching processing technology on the processing scale and the processing quality of the workpiece are broken through, and meanwhile, the preparation of the high-depth-diameter-ratio microstructure can be realized by virtue of the excellent mass transfer capacity of the working solution of the hydrophilic mask, and the micro-processing performance of the workpiece 3 is improved.
The composite chemical etching processing method also comprises the following steps:
connecting and conducting a first electrode 5 and a second electrode 6 positioned in a spray gun piece 7 to the positive electrode and the negative electrode of the plasma processor 4 respectively;
a gas source 8 is used for inputting a gas medium into the spray gun part 7;
under the action of gas glow discharge, the first electrode 5 and the second electrode 6 ionize a gas medium between the two electrodes in the spray gun part 7 to form plasma;
the mask unit 100 is disposed on the workpiece 3, and the plasma ejected from the torch member 7 acts on the mask unit on the workpiece 3 to form the hydrophilic coating 101.
The composite chemical etching processing method also comprises the following steps:
The composite chemical etching processing method also comprises the following steps:
sleeving the spray head piece 16 on the outer side of the spray gun piece 7, and processing a plurality of liquid outlet holes on the spray head piece 16;
an annular gap surrounding the spray gun part 7 is formed between the spray gun part 7 and the spray gun part 16, chemical etching liquid is sprayed onto the workpiece 3 coated with the mask unit from the liquid outlet hole through the annular gap, and plasma sprayed by the spray gun part 7 is sprayed onto the workpiece 3 from the liquid outlet hole.
The composite chemical etching processing method also comprises the following steps:
by means of screen printing, the ink 106 is printed on the workpiece 3 quickly to form a mask unit, and the plasma processor of the synchronous hydrophilization unit 1 performs synchronous hydrophilization on the ink layer 106 and the processing area, so that the manufacturing efficiency of the hydrophilic mask unit is improved, and the manufacturing cost is reduced.
The chemical etching processing method further comprises the following steps:
the mask unit is processed by photolithography using a photolithography machine, thereby fixedly attaching the mask unit to the surface of the workpiece.
The above description is only a preferred embodiment of the present invention, and for those skilled in the art, the present invention should not be limited by the description of the present invention, which should be interpreted as a limitation.
Claims (10)
1. A composite chemical etching processing device is characterized in that: the chemical etching unit is used for conveying chemical etching liquid to the workpiece processing area exposed by the mask pattern; the synchronous hydrophilization unit carries out real-time hydrophilization treatment on the mask unit and the workpiece processing area exposed by the mask pattern, and promotes the mass transfer and the flow of the chemical etching solution in the processing area.
2. The composite chemical etching processing apparatus of claim 1, wherein: the synchronous hydrophilization unit comprises a plasma processor, a first electrode, a second electrode, a spray gun component and a gas source, wherein the first electrode and the second electrode are positioned in the spray gun component, the positive electrode and the negative electrode of the plasma processor are respectively connected with the first electrode and the second electrode, the gas source is communicated with the spray gun component and is used for conveying gas to the spray gun component, the plasma processor acts on the two electrodes to ionize the gas in the spray gun component to form plasma, the plasma sprayed by the spray gun component acts on the mask unit and a workpiece processing area exposed by the mask pattern to realize hydrophilization treatment on the surface of the mask unit and the workpiece processing area exposed by the mask pattern, and real-time hydrophilization can be realized in the chemical etching processing process.
3. The composite chemical etching processing apparatus of claim 2, wherein: the plasma is plasma, and the plasma avoids ablation of the mask layer and damage to the mask structure by high-temperature plasma.
4. The composite chemical etching processing apparatus of claim 2, wherein: the mask unit is a movable mask which is detachably connected with the workpiece, and plasma sprayed by the synchronous hydrophilization unit acts on the workpiece processing area exposed by the movable mask and the mask pattern, so that the workpiece processing area exposed by the movable mask and the mask pattern is hydrophilized in real time in the chemical etching processing process.
5. The composite chemical etching processing apparatus of claim 2, wherein: the mask unit is manufactured and molded through a photoetching method, the mask unit is fixedly attached to the surface of a workpiece, and plasma sprayed by the synchronous hydrophilization unit acts on a workpiece processing area exposed by the mask unit and the mask pattern, so that the workpiece processing area exposed by the mask unit and the mask pattern is hydrophilized in real time in a chemical etching process.
6. The composite chemical etching processing apparatus of claim 2, wherein: the mask unit is manufactured and molded through a printing method, the mask unit is fixedly attached to the surface of a workpiece, and plasma sprayed by the synchronous hydrophilization unit acts on a workpiece processing area exposed by the mask unit and the mask pattern, so that real-time hydrophilization of the processing area exposed by the mask unit and the mask pattern is realized in a chemical etching process.
7. The composite chemical etching processing apparatus of claim 1, wherein: the chemical etching unit comprises a chemical etching container, a clamp, a liquid storage container, a pump piece, a filter and a spray head piece, wherein the chemical etching container is used for accommodating the clamp and chemical etching liquid, the clamp is used for positioning a workpiece, the spray head piece is sleeved on the outer side of the spray gun piece, and the spray head piece is provided with a liquid outlet hole; the chemical etching container is communicated with the liquid storage container, the pump part is communicated with the liquid storage container, chemical etching liquid in the liquid storage container is sucked by the pump part and filtered by the filter and then is conveyed to a position between the spray gun part and the spray head part, and the chemical etching liquid is sprayed out along with plasma sprayed out of the spray gun part and is subjected to composite action to a workpiece processing area exposed by the mask pattern through the liquid outlet.
8. A composite chemical etching processing method is characterized by comprising the following steps:
a mask unit is arranged on the workpiece and provided with a mask pattern, and the mask pattern is used for exposing a workpiece processing area.
Spraying chemical etching liquid to the mask unit and the workpiece processing area exposed by the mask pattern through the spray head piece to realize chemical etching processing of the processing area exposed by the mask pattern;
and plasma sprayed by a plasma processor of the synchronous hydrophilization unit acts on the workpiece processing areas exposed by the mask units and the mask patterns, so that the workpiece processing areas exposed by the mask units and the mask patterns are hydrophilized in real time in the chemical etching process.
9. The composite chemical etching processing method of claim 8, further comprising the steps of:
respectively connecting the positive electrode and the negative electrode of the plasma processor with a first electrode and a second electrode in the spray gun piece; the gas source inputs gas into the spray gun component;
the first electrode and the second electrode ionize gas between the electrodes in the spray gun part to form plasma under the action of gas glow discharge;
the plasma sprayed by the spray gun piece and the chemical etching liquid sprayed by the spray head piece synchronously act on the mask unit and the workpiece processing area exposed by the mask pattern to realize real-time hydrophilization.
10. The composite chemical etching processing method of claim 8, further comprising the steps of:
a movable mask is manufactured by a mechanical processing method, the movable mask is a mask unit, a movable mask plate is detachably arranged on a workpiece, and a plasma processor synchronously performs hydrophilization treatment on the movable mask and a workpiece processing area with a mask pattern exposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210683728.3A CN115747802A (en) | 2022-06-16 | 2022-06-16 | Composite chemical etching processing device and processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210683728.3A CN115747802A (en) | 2022-06-16 | 2022-06-16 | Composite chemical etching processing device and processing method |
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| Publication Number | Publication Date |
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| CN115747802A true CN115747802A (en) | 2023-03-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210683728.3A Pending CN115747802A (en) | 2022-06-16 | 2022-06-16 | Composite chemical etching processing device and processing method |
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| Country | Link |
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| CN (1) | CN115747802A (en) |
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2022
- 2022-06-16 CN CN202210683728.3A patent/CN115747802A/en active Pending
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