CN115703950A - Adhesive film for wafer back grinding - Google Patents

Adhesive film for wafer back grinding Download PDF

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Publication number
CN115703950A
CN115703950A CN202210961515.2A CN202210961515A CN115703950A CN 115703950 A CN115703950 A CN 115703950A CN 202210961515 A CN202210961515 A CN 202210961515A CN 115703950 A CN115703950 A CN 115703950A
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China
Prior art keywords
adhesive
particles
wafer
layer
light
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Granted
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CN202210961515.2A
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CN115703950B (en
Inventor
郑喆
高乾英
崔裁原
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Innox Corp
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Innox Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/255—Polyesters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention provides an adhesive film for wafer back grinding, comprising: a multilayer substrate comprising an upper substrate layer and a lower substrate layer; a first adhesive layer disposed on the upper base material layer; and a second adhesive layer disposed between the upper substrate layer and the lower substrate layer, the second adhesive layer being formed of an adhesive composition including a light-transmitting adhesive resin and light-scattering particles, the second adhesive layer satisfying the following formula 1, and the light-scattering particles having a refractive index of 1.42 to 1.60, thereby reducing or suppressing generation of adhesive residues in a wafer back-grinding step, having an excellent cushioning effect on a surface of a wafer, and improving uniformity of a thickness of the wafer after the back-grinding step, wherein the formula 1: in the formula 1, A is the refractive index of the light-transmitting adhesive resin, and B is the refractive index of the light-scattering particles.

Description

Adhesive film for wafer back grinding
Technical Field
The present invention relates to an adhesive film used for protecting the surface of a wafer in a wafer back grinding (wafer back grinding), wafer thinning (wafer lapping) or wafer thinning (wafer thinning) process, and more particularly, to an adhesive film for wafer back grinding which has excellent workability by reducing or eliminating the generation of adhesive residue (residual) when the adhesive film is removed (peeled) after the wafer back grinding process.
Background
With the development of technology in recent years, semiconductor chips are required to be miniaturized, highly densified, and thinned, and therefore, wafers are also required to be thinned. A typical method for thinning wafer chips is to reduce the thickness by polishing the back surface of the wafer, and the wafer can be thinned by performing a polishing process according to the type or specification of an electronic device using semiconductor chips.
Since the back grinding of a wafer of semiconductor chips is a process in which physical impact is applied, the back grinding of the wafer is generally performed in a state in which an adhesive film for back grinding of the wafer is adhered in order to protect the surface of the wafer. Such an adhesive film includes a base material and an adhesive layer for bonding the surface of the wafer, and usually a cushion layer or an impact absorption layer is formed on the back surface of the base material for cushioning effect. Also, the adhesive layer is generally formed of an energy ray-curable adhesive composition.
After the back side polishing of the wafer, the adhesive film for the wafer back side polishing step is removed from the front surface of the wafer by irradiation with an energy ray to reduce the adhesive force and peel the wafer.
On the other hand, with the rapid development of information communication technology and the expansion of the market in recent years, the demand for semiconductor devices has been becoming more and more dense. As a result, the thickness of the active layer (active layer) disposed on the wafer surface increases, and the unevenness (or pattern) of the active layer gradually increases. Therefore, when the adhesive film for wafer back grinding is peeled off, the energy ray curing may not be sufficiently performed in a shadow region generated by the irregularities of the active layer. As a result, since the adhesive force of the adhesive film for wafer back surface polishing is not sufficiently reduced and the peeling force is reduced, adhesive residues derived from the adhesive film are likely to remain on the wafer surface, which hinders the workability and finally adversely affects the quality of the semiconductor chip to be produced, and there is a technical demand for solving the problem.
Disclosure of Invention
The present invention has an object to provide a wafer back surface polishing adhesive film which can reduce or suppress the generation of adhesive residue when peeling off the wafer back surface polishing adhesive film after a wafer back surface polishing step even if a large uneven portion exists in a wafer or an active layer on the wafer surface.
Objects of the present invention are not limited to the above-mentioned objects, and other objects and advantages of the present invention, which are not mentioned above, can be understood by the following description and can be more clearly understood by the embodiments of the present invention. Also, it is understood that the objects and advantages of the present invention can be realized by the means shown in the claims and combinations thereof.
In order to solve the above-described problems, according to an embodiment of the present invention, there is provided an adhesive film for wafer back surface polishing, including: a multilayer substrate comprising an upper substrate layer and a lower substrate layer; a first adhesive layer disposed on the upper base material layer; and a second adhesive layer disposed between the upper substrate layer and the lower substrate layer, wherein the second adhesive layer is formed of an adhesive composition containing a light-transmitting adhesive resin and light-scattering particles, and satisfies the following formula 1, and the light-scattering particles have a refractive index of 1.42 to 1.60.
Formula 1: absolute A-B between 0.05 and 0.2
In formula 1, a is the refractive index of the light-transmissive binder resin, and B is the refractive index of the light-scattering particles.
The light scattering particles may be included in an amount of 0.1 to 10 parts by weight, based on 100 parts by weight of the adhesive composition of the second adhesive layer.
The light scattering particles may include one or more of inorganic particles and organic particles.
The average particle diameter of the light scattering particles may be 1 to 50 μm.
The inorganic particles may include one or more selected from the group consisting of silica particles, glass frit, and quartz particles.
The organic particles may include one or more selected from the group consisting of acrylic resin particles, polystyrene resin particles, particles of a styrene-acrylic copolymer component, polyethylene resin particles, epoxy resin particles, silicone resin particles, polyvinylidene fluoride particles, polytetrafluoroethylene particles, divinylbenzene resin particles, phenol resin particles, urethane resin particles, cellulose acetate particles, nylon particles, cellulose particles, benzoguanamine resin particles, and melamine resin particles.
The adhesive film for wafer back surface polishing of the present invention may have a total light transmittance of 70% or more and a diffuse transmittance of 6% or more.
The first adhesive layer may have a thickness of 10 to 100 μm, and the second adhesive layer may have a thickness of 10 to 100 μm.
The lower substrate layer and the upper substrate layer may each include one or more selected from the group consisting of polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, wholly aromatic polyester, polyimide, polyamide, polycarbonate, polyacetal, modified polyphenylene ether, polyphenylene sulfide, polysulfone, polyether ketone, and biaxially oriented polypropylene, and preferably, the lower substrate layer and the upper substrate layer may be formed of polyethylene terephthalate.
The first adhesive layer may be formed of an adhesive composition including an acrylic adhesive resin.
The light-transmitting adhesive resin of the second adhesive layer may include a light-transmitting acrylic adhesive resin.
The second adhesive layer may have a shear storage modulus of 0.05 to 5.00MPa at a temperature of 30 ℃.
The upper substrate layer may further include a primer layer on at least one of the upper surface, the lower surface, and the upper surface.
When the adhesive film for wafer back grinding of the present invention is applied to a back grinding process, even if a large uneven portion exists on a wafer or an active layer on a wafer surface, it has excellent uneven burying property when adhering to the wafer surface, and when the adhesive film for wafer back grinding is peeled after the wafer back grinding process, it is possible to improve wafer handling manufacturability and quality of a produced semiconductor chip by reducing or suppressing generation of adhesive residue.
When the adhesive film for wafer back grinding of the present invention is applied to a back grinding process, the adhesive film has an excellent cushion effect (or protective effect) on the front surface (front surface) of the wafer, and the uniformity of the thickness of the wafer can be improved after the back grinding process.
The effects of the present description are not limited to the above-mentioned effects, and other effects not mentioned can be clearly understood by those skilled in the art from the following description. Hereinafter, the above effects and specific effects of the present invention will be described while describing specific details for implementing the present invention.
Drawings
Fig. 1 is a flowchart schematically showing a process of applying the adhesive film for wafer back grinding according to the embodiment of the present invention to a wafer back grinding step and a peeling step thereafter.
Fig. 2 is a cross-sectional view of an adhesive film for wafer back side polishing according to an embodiment of the present invention.
Description of reference numerals
100: adhesive film for wafer back grinding
200: wafer before back grinding process
210: wafer after back grinding process
300: active layer
R: residual region of adhesive
10: first adhesive layer
20: upper substrate layer
30: second adhesive layer
40: lower base material layer
P: light scattering particles.
Detailed Description
The foregoing objects, features and advantages will be described in detail with reference to the accompanying drawings, whereby a person having ordinary skill in the art to which the present invention pertains can easily carry out the technical idea of the present invention. In describing the present invention, detailed descriptions will be omitted unless it is determined that the detailed descriptions of the known technologies related to the present invention may unnecessarily obscure the gist of the present invention. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to designate the same or similar structural elements.
In the present specification, the term "upper (or lower)" of a structural element or the term "upper (or lower)" of a structural element means not only an arrangement in which an arbitrary structure is in contact with an upper surface (or a lower surface) of the structural element, but also another structure may be interposed between the structural element and the arbitrary structure arranged above (or below) the structural element.
As used in this specification, the singular expressions include the plural expressions unless the specification explicitly mentions otherwise. In the present application, the terms "consisting of 8230 \8230 \ 8230;" consisting of or "including" and the like should not be construed as necessarily including all of the various structural elements described in the specification, should be construed as possibly excluding some of the structural elements, or may also include additional structural elements.
In the present specification, terms such as "one side", "the other side" and "both sides" are used to distinguish a certain structural element from other structural elements, and the structural element is not limited to the above terms.
In the description of the present specification, "(meth) acrylate" is used as a term including "acrylate" and "methacrylate", and similar terms are also used.
In the following, detailed descriptions of related known technologies that unnecessarily obscure the gist of the present invention will be omitted in describing the present invention.
Fig. 1 is a flowchart schematically showing a process of applying an adhesive film 100 for wafer back grinding according to an embodiment of the present invention to a wafer and reducing adhesive peeling by irradiation with an energy ray after back grinding.
Specifically, S1 in fig. 1 is a step of preparing the wafer (loading the wafer) before the wafer back grinding process, and shows that the active layer 300 is disposed on the surface of the wafer 200, and the active layer 300 may include a base layer including irregularities (patterns) existing on the surface of the wafer.
S2 in fig. 1 is a step of adhering (or affixing) the wafer back-grinding adhesive film 100 of the present invention to the front surface side of the wafer, thereby functioning to protect the front surface of the wafer 200 and/or the active layer 300 during back grinding.
S3 of fig. 1 schematically shows a step of performing a back grinding process in which various back grinding apparatuses used in the art, for example, an apparatus that can rotate a grinding wheel after loading (loading) a wafer on a chuck table (chuck table), can be used without limitation. On the other hand, the thickness of the wafer before the back grinding process is in the range of about 700 μm to 900 μm, and after the back grinding process, the thickness of the final wafer can be reduced to a thickness in the range of about 30 μm to 300 μm in accordance with the specifications of the electronic device to which the semiconductor chip is applied.
S4 of fig. 1 schematically shows a step of irradiating the wafer back side polishing adhesive film 100 with an energy ray (typically, ultraviolet ray (UV)) after the back side polishing step, and the thickness of the wafer 210 after the back side polishing step is reduced relative to the wafer 200 before the back side polishing step. Thus, the adhesive layer of the adhesive film 100 for wafer back polishing is generally formed of an energy ray-curable adhesive composition.
S5 of fig. 1 schematically shows a step of peeling off the wafer back side polishing adhesive film 100 after the back side polishing step. In this case, if the exposure of the energy ray reaching the adhesive film 100 for wafer back grinding is insufficient, the adhesive force is not sufficiently reduced to such an extent that the adhesive film can be satisfactorily peeled off, and therefore, there is a possibility that a residue of the adhesive film 100 for wafer back grinding remains in the peeling step. As described above, the residue remaining region (R) of the adhesive is exemplarily shown in fig. 1.
If the residue of the adhesive film 100 for wafer back grinding remains on the wafer, a problem may occur in that the manufacturability and the quality of the produced semiconductor chip are adversely affected. Further, the shadow region that cannot be reached by the energy ray increases as the degree of the unevenness (pattern) of the active layer 300 disposed on the wafer 200 or the surface of the wafer is deeper, and thus the above problem is further deepened.
The present inventors paid attention to the above-described problem, and added light scattering particles P to the second adhesive layer 30 of the adhesive film 100 for wafer back grinding in order to sufficiently reach the adhesive film for wafer back grinding by exposure to energy rays.
In this way, since the second adhesive layer 30 is formed of an adhesive composition containing a light-transmitting adhesive resin and light-scattering particles P, a light-scattering effect can be exhibited. Therefore, the present inventors have found that the energy ray to be irradiated can be uniformly dispersed in the adhesive film 100 for wafer back side polishing, and the problem of the underexposure can be solved, and have completed the present invention.
Therefore, as shown in fig. 2, the adhesive film for wafer back grinding of the present invention has a structure including: a multilayer substrate including an upper substrate layer 20 and a lower substrate layer 40; a first adhesive layer 10 disposed on the upper base layer 20; and a second adhesive layer 30 disposed between the upper substrate layer 20 and the lower substrate layer 40, wherein the second adhesive layer 30 may be formed of an adhesive composition containing a light-transmitting adhesive resin and light-scattering particles P.
Hereinafter, the characteristics of the adhesive film for wafer back surface polishing and the structure of each layer will be described in detail.
Multilayer substrate
The multilayer substrate includes a lower substrate layer 40, an upper substrate layer 20, and a second adhesive layer 30. The first adhesive layer 10 is disposed on the upper substrate layer 20, and the second adhesive layer 30 is disposed between the lower substrate layer 40 and the upper substrate layer 20. In the adhesive film for wafer back surface polishing of the present invention, the multilayer base material has a sandwich structure in which the second adhesive layer 30 is disposed between the lower base material layer 40 and the upper base material layer 20.
The lower substrate layer 40 and the upper substrate layer 20 may be formed of a material having a high tensile elastic modulus. More specifically, the lower substrate layer 40 and the upper substrate layer 20 may have a tensile elastic modulus of 1000MPa or more, for example, 1200MPa or more, 1500MPa or more, 2000MPa or more, 3000MPa or more, and the tensile elastic modulus in this case is based on the measured value under the temperature condition of 23 ℃.
When the tensile modulus of elasticity of the lower substrate layer 40 and the upper substrate layer 20 is relatively low, and less than 1000MPa, the supporting force for the wafer or the semiconductor chip is low, and therefore, there is a possibility that the semiconductor chip may collide in the back grinding step (back grinding step).
The lower substrate layer 40 and the upper substrate layer 20 may each include one or more selected from the group consisting of Polyimide (PI) such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polybutylene terephthalate (PBT), and a wholly aromatic polyester, polyamide (PA), polycarbonate (PC), polyacetal, modified polyphenylene ether, polyphenylene sulfide, polysulfone, polyether ketone, and biaxially Oriented polypropylene (Oriented Poly-propylene).
The lower substrate layer 40 and the upper substrate layer 20 may be formed of the same material, and for example, the lower substrate layer 40 and the upper substrate layer 20 may be formed of a polyethylene terephthalate (PET) material.
The thicknesses of the lower substrate layer 40 and the upper substrate layer 20 are not particularly limited, and may have the same thickness. For example, the lower substrate layer 40 and the upper substrate layer 20 may each have a thickness of about 10 μm to 150 μm. On the other hand, in the present invention, since the lower substrate layer 40 and the upper substrate layer 20 may have a high tensile modulus, when the thickness of the lower substrate layer 40 and the upper substrate layer 20, particularly the upper substrate layer 20, is too thick, the impact generated in the back grinding process may be easily received. Therefore, for example, the thickness of the lower substrate layer 40 and the upper substrate layer 20 may be about 150 μm or less, but is not limited thereto.
On the other hand, various additives such as a coupling agent, a plasticizer, an antistatic agent, an antioxidant, etc. may be included in a small amount according to the requirements of the lower substrate layer 40 and/or the upper substrate layer 20.
First adhesive layer
The first adhesive layer 10 is a portion to be adhered (or adhered) to the wafer in fig. 2. The first adhesive layer 10 is not particularly limited as long as it has appropriate adhesiveness at room temperature, and may be formed of a variety of adhesive compositions such as an acrylic adhesive composition, a silicon adhesive composition, a polyester adhesive composition, a polyamide adhesive composition, a urethane adhesive composition, and a styrene-diene block copolymer adhesive composition, which are known Ultraviolet (UV) curable adhesive compositions.
For example, the first adhesive layer 10 may be formed of an adhesive composition including an acrylic adhesive resin, which may be a polymer of a (meth) acrylic monomer having an alkyl group having 1 to 14 carbon atoms, specifically, one or more polymers selected from the group consisting of ethylhexyl acrylate, butyl acrylate, ethyl acrylate, methyl acrylate, acrylic acid, hydroxyethyl acrylate, and hydroxybutyl acrylate, and preferably, may be a polymer including a monomer polymerized including a monomer bonded to a carboxyl group or a hydroxyl group.
The adhesive composition for forming the first adhesive layer 10 may further include a photopolymerization initiator and a crosslinking agent, and is not particularly limited as long as it is generally used in the art.
The crosslinking agent plays a role of increasing the cohesive force of the adhesive composition, and one or more crosslinking agents, for example, isocyanate-based crosslinking agents, epoxy-based crosslinking agents, aziridine-based crosslinking agents, metal chelate-based crosslinking agents, and the like may be used in combination.
The photopolymerization initiator is used by appropriately selecting the kind and content thereof in consideration of the curing speed of the resin composition, etc., as a substance for initiating the reaction of the ultraviolet curing crosslinking agent by ultraviolet irradiation, and may be used by mixing one or more photopolymerization initiators. For example, hydroxycyclohexylphenylketone (Irgacure 184), 2-methyl-1- [4- (methylthio) phenyl ] -2-morpholinyl-propan-1-one (2-methyl-1, [4- (meth) phenyl ] -2-morpholino-propan-1-on; irgacure 907), α -methoxy- α -hydroxyacetophenone (α, α -methoxy- α -hydroxyacetophenone; irgacure 651) and 2-hydroxy-2-methyl-1-phenylpropan-1-one (2-hydroxy-2-methyl-1-phenyl-propan-1-one; irgacure 1173) can be used.
On the other hand, the thickness of the first adhesive layer 10 is not particularly limited, and may be, for example, about 10 to 100 μm.
Although not shown in fig. 2, a release film disposed on an upper face of the first adhesive layer and adhered by the first adhesive layer may be further included. One side of the release film can be subjected to release treatment. The above-mentioned release treatment may be used without limitation as long as it is a substance generally used in the art for release treatment, and for example, it is preferable to carry out the release treatment with silicone.
Second adhesive layer
In fig. 2, the second adhesive layer 30 is disposed between the upper base material layer 20 and the lower base material layer 40, and functions as a buffer layer for alleviating the impact of the wafer and a light diffusion layer having a light scattering effect in the back grinding step.
As described above, the lower the shear storage modulus of the second adhesive layer 30 of the present invention is, the more advantageous the effect of providing cushioning, but if the shear storage modulus is too low, the problem of flowing of the cushioning layer at high temperature or uneven thickness of the cushioning layer may occur with an increase in temperature in the back-grinding step. In view of the above, it is preferable that the shear storage modulus of the second adhesive layer 30 under the temperature condition of 30 ℃ is 0.05MPa to 5MPa, more preferably 0.05MPa to 3MPa, and most preferably 0.05MPa to 2.5MPa. The adhesive film 100 for wafer back grinding including the second adhesive layer 30 of the present invention has an excellent cushion effect on the surface of the wafer, and also has an advantage of improving the thickness uniformity of the wafer after the back grinding process.
The second adhesive layer 30 of the present invention can be formed of an adhesive composition containing a light-transmitting adhesive resin and light-scattering particles P, and thus functions as a light diffusion layer for imparting a light-scattering effect. By the light scattering effect of the second adhesive layer 30, the energy rays irradiated for peeling the adhesive film for wafer back side polishing are uniformly dispersed, and the generation of adhesive residues at the time of peeling can be reduced or suppressed, and the manufacturability and the quality of the semiconductor chip to be produced can be excellently improved. The adhesive composition for forming the second adhesive layer 30 may be used by mixing one or more crosslinking agents, such as a metal chelate-based crosslinking agent, an isocyanate-based crosslinking agent, and an epoxy-based crosslinking agent, as needed.
Therefore, in order to cause the second adhesive layer 30 to exhibit the scattering effect, it is experimentally derived that the difference in refractive index between the light-transmissive adhesive resin and the light-scattering particles P is preferably 0.05 to 0.2, and this relationship can be embodied by the following formula 1.
Formula 1: absolute A-B between 0.05 and 0.2
In formula 1, a is the refractive index of the light-transmissive binder resin, and B is the refractive index of the light-scattering particles.
Also, the light scattering particles P are preferably included in an amount of 0.1 to 10 parts by weight, based on 100 parts by weight of the bonding composition for forming the second bonding layer 30 of the present invention. If the content of the light scattering particles P is less than 0.1 parts by weight, the light scattering effect may be insufficient. Also, if the content of the light scattering particles P is more than 10 parts by weight, the total light transmittance is lowered, curing by energy rays during peeling may not proceed to a desired extent, the effect of reducing adhesive residues may be insufficient, and the inclusion of excessive particles may adversely affect the uniformity of the wafer after the wafer back grinding process.
The translucent adhesive resin and the light scattering particles P included in the second adhesive layer 30 will be described in detail below.
Light scattering particles
The light scattering particles P are particles for diffusing or scattering light, and preferably transparent fine particles having light transmittance, which are not necessarily colorless, may be colored as long as they have high light transmittance. In order to make the light scattering effect uniform, the light scattering particles P preferably have a spherical (sphere) shape, and in order to have high light transmittance, the refractive index of the light scattering particles P is preferably in the range of 1.42 to 1.60.
The average particle diameter of the light scattering particles P is preferably 1 to 50 μm, and more preferably 1 to 10 μm. When the average particle size is less than 1 μm, the light diffusion effect or the light scattering effect is low, and when it is more than 50 μm, the thickness uniformity of the second adhesive layer 30 and the wafer back side polishing adhesive film 100 including the particles may be reduced because the particles are too coarse. On the other hand, the average particle diameter is measured by the coulter counter (coulter counter) method. Although it is preferable that the average particle diameter of the light scattering particles P is generally uniform in order to improve uniformity, 2 or more kinds of light scattering particles P of different materials or particle diameters may be mixed for use in order to adjust the diffusion characteristics.
When the plurality of conditions described above can be satisfied, the kind of the light scattering particles P is not particularly limited, and may include one or more of inorganic particles and organic particles. The inorganic particles may include one or more selected from the group consisting of silica particles, glass frit, and quartz particles. The organic particles may include one or more selected from the group consisting of acrylic resin particles, polystyrene resin particles, particles of a styrene-acrylic copolymer component, polyethylene resin particles, epoxy resin particles, silicone resin particles, polyvinylidene fluoride particles, polytetrafluoroethylene particles, divinylbenzene resin particles, phenol resin particles, urethane resin particles, cellulose acetate particles, nylon particles, cellulose particles, benzoguanamine resin particles, and melamine resin particles.
Light-transmitting adhesive resin
The second adhesive layer 30 of the present invention is formed of an adhesive resin selected from light-transmitting adhesive resins in order to function as a light diffusion layer.
For example, the refractive index of the light transmissive bonding resin is preferably in the range of 1.40 to 1.70, and more preferably in the range of 1.45 to 1.55.
The light-transmitting adhesive resin is not particularly limited as long as it is a light-transmitting resin material, such as a light-transmitting thermoplastic resin, thermosetting resin, or photocurable resin. For example, room temperature pressure-reducing adhesive resins such as polyethylene resins, polypropylene resins, cycloolefin resins, polyester resins, epoxy resins, polyurethane resins, silicone resins, acrylic resins, and the like can be used, or resins that do not have room temperature pressure-reducing adhesive properties such as polymethyl methacrylate resins, polycarbonate resins, polyethylene terephthalate resins, polyvinyl chloride resins, and the like can also be used.
Preferably, in the present invention, an acrylic adhesive resin is used as the light transmissive adhesive resin. For example, the acrylic binder resin may be a homopolymer or copolymer of acrylic monomers such as acrylic acid and esters thereof, methacrylic acid and esters thereof, acrylamide, acrylonitrile, and the like, and may be a copolymer of at least one of the above acrylic monomers with a vinyl monomer such as vinyl acetate, maleic anhydride, styrene, or the like. And, it can be further modified by further reacting with a monomer selected from the group consisting of monomers having adhesive properties such as ethyl acrylate, butyl acrylate and 2-ethylhexyl acrylate; monomers used as a cohesive force component such as vinyl acetate, acrylamide, acrylonitrile, styrene, and methacrylate; functional group-containing monomers capable of further improving the adhesive force, such as acrylic acid, methacrylic acid, itaconic acid, maleic anhydride, hydroxyethyl methacrylate, hydroxypropyl methacrylate, dimethylaminoethyl methacrylate, methylol acrylamide, glycidyl methacrylate, and the like; the acrylic binder resin is obtained by copolymerizing at least one member selected from the group consisting of fluorine-containing acrylates and sulfur-containing acrylates for adjusting the refractive index.
On the other hand, the thickness of the second adhesive layer 30 is not particularly limited, and may be, for example, about 10 to 100 μm.
Adhesive film for wafer back grinding
Preferably, the adhesive film 100 for wafer back grinding of the present invention has a total light transmittance of 70% or more and a diffuse transmittance of 6% or more.
Specifically, in order to peel the wafer back-grinding adhesive film 100 from the wafer, a curing reaction is performed by irradiation with an energy ray (typically, ultraviolet ray) in order to reduce the adhesive force. In this case, the curing reaction by the energy ray can be sufficiently performed, and the total light transmittance is preferably 70% or more.
On the other hand, since the second adhesive layer 30 of the present invention contains the light scattering particles P, a light scattering or light diffusing effect is exhibited in the entire structure of the adhesive film 100 for wafer back side polishing. In order to sufficiently exhibit the light scattering or light diffusing effect, the diffuse transmittance of the entire structure of the adhesive film 100 for wafer back surface polishing is preferably 6% or more.
Hereinafter, the structure and operation of the present invention will be described in more detail with reference to preferred embodiments of the present invention. However, this is set forth as a preferred example of the present invention and should not be construed as limiting the present invention in any way. The content not described here is not described as long as it can be sufficiently analogized technically by a person of ordinary skill in the art.
Preparation example 1: preparation of a first bonding composition for Forming a first bonding layer
A monomer mixture consisting of 27 g of n-Butyl Acrylate (BA), 48 g of Methyl Acrylate (MA) and 25 g of hydroxyethyl acrylate (HEA) was placed in a reactor in which nitrogen was refluxed and the temperature was easily adjusted by setting a cooling device.
Next, 100 parts by weight of ethyl acetate (EAc) as a solvent was put into 100 parts by weight of the monomer mixture, and nitrogen gas was injected and sufficiently mixed at a temperature of 30 ℃ for 30 minutes or more in order to remove oxygen in the reactor. Thereafter, the temperature was raised to 50 ℃ and maintained, azobisisobutyronitrile at a concentration of 0.1 part by weight was added as a reaction initiator, and after the reaction was started, the first reactant was prepared by polymerization for 24 hours.
24.6 parts by weight of 2-methacryloyloxyethyl isocyanate (MOI) and 1 part by weight of a catalyst (dibutyltin dilaurate: dibutyl tin dilaurate)) per MOI were mixed with the above first reactant, and reacted at a temperature of 40 ℃ for 24 hours to obtain an acrylic binder resin having a weight average molecular weight of 50 ten thousand.
A first adhesive composition for forming a first adhesive layer was prepared by adding 0.1 part by weight of Irgacure184 (BASF) as a photopolymerization initiator and 2 parts by weight of an isocyanate-based crosslinking agent (Nippon polyurethane Kogyo co., ltd., trade name "Coronate C") as a crosslinking agent to 100 parts by weight of the acrylic adhesive resin, and then mixing them thoroughly.
Preparation example 2: preparation of a second bonding composition for Forming a second bonding layer
An acrylic binder resin having a weight average molecular weight of 60 ten thousand was obtained by polymerizing a mixture obtained by mixing 20 parts by weight of butyl acrylate, 10 parts by weight of ethylhexyl acrylate, 55 parts by weight of methyl acrylate, 7 parts by weight of 2-hydroxyethyl acrylate, 8 parts by weight of acrylic acid, 0.05 parts by weight of azobisisobutyronitrile, and 100 parts by weight of ethyl acetate under a nitrogen atmosphere at a temperature of 60 ℃ for 6 hours.
After 3 parts by weight of an isocyanate-based crosslinking agent (product name "Coronate C", manufactured by Nippon polyurethane e Kogyo co., ltd.) was added based on 100 parts by weight of the acrylic adhesive resin, a second adhesive composition for forming a second adhesive layer was prepared by thoroughly mixing.
The refractive index of the second adhesive composition prepared above was measured to be 1.48, and the measurement was performed by using an Abbe (Abbe) refractometer.
Example 1
A first composite film having a first adhesive layer of 120 μm thickness was prepared by coating the first adhesive composition of preparation example 1 on a release-treated PET (polyethylene terephthalate film, 50 μm in thickness) so that the thickness of the first adhesive layer became 20 μm and adhering a biaxially oriented polyethylene terephthalate (PET) film (substrate) of 50 μm thickness.
Next, 1.0 part by weight of organic particles (referred to as "b 1") of a polystyrene component having a refractive index of 1.59 and an average particle diameter of 3 μm as light scattering particles was added based on 100 parts by weight of the second adhesive composition of preparation example 2, and then sufficiently mixed and coated on a biaxially oriented polyethylene terephthalate (PET) film having a thickness of 25 μm so that the thickness thereof became 20 μm, thereby preparing a second composite film having a second adhesive layer having a thickness of 45 μm.
An adhesive film for wafer back grinding having an overall thickness of 115 μm (the overall thickness does not include the thickness of the release PET) was prepared by joining the first composite film and the second composite film.
Example 2 and example 3 and comparative examples 1 to 3
In example 1, adhesive films for wafer back grinding were prepared in the same manner as in example 1, except that the kinds and contents of the respective components, the thickness of the adhesive layer, and the like were changed to the following table 1.
Experimental example 1: evaluation of optical Properties
The total transmittance (t.t,%) and the diffused transmittance (d.t,%) of the adhesive films for wafer back polishing of examples 1 to 3 and comparative examples 1 to 3 were measured by a haze meter (hazemeter) device (Nippon Denshoku corporation, NDH 5000), and the structures thereof are shown in table 1.
Experimental example 2: determination of shear storage modulus of second adhesive layer
Samples having a size of 8mm in diameter × 1mm in thickness were obtained by laminating a single-layer adhesive layer formed of the second adhesive composition solution used for forming the second adhesive layer of the adhesive film for wafer back grinding of examples 1 to 3 and comparative examples 1 to 3 described above using a Rheometer (Rheometer, TA instruments, inc.; ARES-G2) as a shear storage modulus measuring apparatus, and the shear storage modulus was measured under a temperature environment of 1Hz from-20 ℃ to 120 ℃ and recorded under a temperature condition of 30 ℃ and shown in table 1 below.
Experimental example 3: thickness uniformity and residue testing after wafer backside grinding
After the adhesive films for wafer back-grinding of examples 1 to 3 and comparative examples 1 to 3 were adhered to a semiconductor circuit surface (= the wafer surface), a wafer having a thickness of 725 μm was back-ground to a thickness of 100 μm using a back-grinding machine (DISCO corporation; DGP 8760).
After the back grinding process was completed, the wafer was irradiated with 300mJ/cm by an exposure apparatus (Shiming VACTRON; TRSJ-3000) 2 Ultraviolet ray A of (1). Then, a Heat sealing tape (MBS-100R) was thermocompression bonded to one outer peripheral portion of the wafer back grinding adhesive film at a temperature of 220 ℃ and then the wafer back grinding adhesive film was removed.
After the back grinding process, the thickness uniformity of the wafer and the occurrence of adhesive residue were confirmed by observing 20 points on the surface of the wafer from which the adhesive film was removed through a microscope.
1. Binder residue testing
The size of the residue at 20 points in the back-polished wafer was measured, evaluated as follows, and the results are shown in table 1 below.
O: no residue with a size of 10 μm or less
And (delta): residue with a size of 10 μm or less is generated
X: the residue with a size of more than 10 μm is generated in a large amount
2. Thickness uniformity testing of wafers
When the standard deviation of the thickness at 20 points in the back-polished wafer is ± 4 μm or less, the degree of the thickness uniformity of the wafer is evaluated as good (∘), and when the standard deviation of the thickness is ± 6 μm or more, the degree of the thickness uniformity of the wafer is evaluated as bad (×), and the structure thereof is shown in table 1 below.
TABLE 1
Figure BDA0003792929360000151
B1 to b3 of table 1 above are as follows.
-b1: as the light-scattering particles, polystyrene having a refractive index of 1.59 was used, and the average particle diameter was 3 μm.
-b2: the light-scattering particles were polytetrafluoroethylene components having a refractive index of 1.42, and had an average particle diameter of 3 μm.
-b3: as the light-scattering particles, polymethyl methacrylate having a refractive index of 1.49 was used, and the average particle diameter was 3 μm.
As can be seen from table 1, in examples 1 to 3 of the present invention, the second adhesive layer functions as a buffer layer, has a protective effect during wafer back grinding, and shows excellent results in an adhesive residue test and a thickness uniformity test by including light scattering particles in the second adhesive layer.
In contrast, the second adhesive layer in comparative example 1 does not contain light scattering particles, and a residue having a size of 10 μm or more is generated in a large amount in the adhesive residue test. The comparative example 2, which contains an excessive amount of light scattering particles, also showed poor results in the adhesive residue test and the thickness uniformity test, and the shear storage modulus of the second adhesive layer was high relative to the examples. In comparative example 3, the difference in refractive index between the binder resin for forming the adhesive layer and the light scattering particles is too low, and the difference does not satisfy formula 1, so that the light scattering (diffusing) effect is insufficient, and a residue having a size of 10 μm or less is generated in the binder residue test result, and thus the effect of suppressing the residue generation is not preferable.
As described above, although the present invention has been described with reference to the illustrated drawings, the present invention is not limited by the embodiments and drawings disclosed in the present specification, and it is apparent that various modifications can be implemented by those skilled in the art within the scope of the technical idea of the present invention. In addition, even if the operation and effect on the configuration of the present invention are not described explicitly in the description of the embodiment of the present invention, the effect that can be predicted by the corresponding configuration can be recognized.

Claims (14)

1. An adhesive film for polishing a back surface of a wafer,
the method comprises the following steps:
a multilayer substrate comprising an upper substrate layer and a lower substrate layer;
a first adhesive layer disposed on the upper base material layer; and
a second adhesive layer disposed between the upper substrate layer and the lower substrate layer,
the second adhesive layer is formed from an adhesive composition containing a light-transmitting adhesive resin and light-scattering particles, and satisfies the following formula 1, wherein the light-scattering particles have a refractive index of 1.42 to 1.60:
formula 1: absolute A-B is more than or equal to 0.05 and less than or equal to 0.2,
in formula 1, a is the refractive index of the light-transmissive binder resin, and B is the refractive index of the light-scattering particles.
2. The adhesive film for wafer back side polishing according to claim 1, wherein the light scattering particles are contained in an amount of 0.1 to 10 parts by weight based on 100 parts by weight of the adhesive composition of the second adhesive layer.
3. The bonding film for wafer back grinding as claimed in claim 1, wherein the total light transmittance is 70% or more.
4. The bonding film for wafer back surface polishing according to claim 1, wherein the diffuse transmittance is 6% or more.
5. The adhesive film for wafer back side polishing according to claim 1, wherein the light scattering particles include one or more of inorganic particles and organic particles.
6. The bonding film for wafer back surface polishing according to claim 1, wherein the light scattering particles have an average particle diameter of 1 μm to 50 μm.
7. The bonding film for wafer back side polishing according to claim 5, wherein the inorganic particles include one or more selected from the group consisting of silica particles, glass frit, and quartz particles.
8. The bonding film for wafer back surface polishing according to claim 5, wherein the organic particles include at least one selected from the group consisting of acrylic resin particles, polystyrene resin particles, particles of a styrene-acrylic copolymer component, polyethylene resin particles, epoxy resin particles, silicone resin particles, polyvinylidene fluoride particles, polytetrafluoroethylene particles, divinylbenzene resin particles, phenol resin particles, urethane resin particles, cellulose acetate particles, nylon particles, cellulose particles, benzoguanamine resin particles, and melamine resin particles.
9. The bonding film for wafer back side grinding as claimed in claim 1,
the thickness of the first adhesive layer is 10 to 100 μm,
the thickness of the second adhesive layer is 10 to 100 μm.
10. The adhesive film for wafer back side polishing as claimed in claim 1, wherein each of the lower substrate layer and the upper substrate layer comprises at least one selected from the group consisting of polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, wholly aromatic polyester, polyimide, polyamide, polycarbonate, polyacetal, modified polyphenylene ether, polyphenylene sulfide, polysulfone, polyether ketone, and biaxially oriented polypropylene.
11. The adhesive film for wafer back surface polishing according to claim 10, wherein the lower base layer and the upper base layer are formed of polyethylene terephthalate.
12. The adhesive film for wafer back side polishing according to claim 1, wherein the first adhesive layer is formed of an adhesive composition containing an acrylic adhesive resin.
13. The bonding film for wafer back side polishing as claimed in claim 1, wherein the light-transmitting bonding resin of the second bonding layer comprises a light-transmitting acrylic bonding resin.
14. The adhesive film for wafer back side polishing according to claim 1, wherein the shear storage modulus of the second adhesive layer at a temperature of 30 ℃ is 0.05 to 5.00MPa.
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Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011074246A (en) * 2009-09-30 2011-04-14 Hitachi Chem Co Ltd Film like adhesive
JP2011171711A (en) * 2010-01-21 2011-09-01 Hitachi Chem Co Ltd Adhesive film for semiconductor wafer processing
JP2011195598A (en) * 2010-03-17 2011-10-06 Hitachi Maxell Ltd Energy ray curable adhesive tape for wafer protection
TW201211188A (en) * 2010-09-09 2012-03-16 Hitachi Chemical Co Ltd Adhesive composition, adhesive sheet used to connect electric circuit components and preparation method of semiconductor device
CN104592905A (en) * 2013-10-31 2015-05-06 藤森工业株式会社 Light-diffusing adhesive layer and light-diffusing adhesive film
CN104781912A (en) * 2012-11-20 2015-07-15 古河电气工业株式会社 Method for manufacturing semiconductor chips and surface protective tape for thin-film grinding used in same
CN104955912A (en) * 2013-05-28 2015-09-30 琳得科株式会社 Adhesive agent composition, adhesive sheet, and method for manufacturing semiconductor device
CN107112230A (en) * 2015-03-16 2017-08-29 古河电气工业株式会社 Semiconductor crystal wafer processing adhesive tape
CN107400469A (en) * 2016-05-18 2017-11-28 日东电工株式会社 Grinding back surface band
CN108701641A (en) * 2016-02-22 2018-10-23 琳得科株式会社 Protective film forms the manufacturing method with piece, the manufacturing method of protective film formation piece and semiconductor device
CN108701601A (en) * 2016-03-03 2018-10-23 琳得科株式会社 The manufacturing method of semiconductor machining adhesive tape and semiconductor device
CN110819249A (en) * 2018-08-07 2020-02-21 日东电工株式会社 Back grinding belt
CN111716242A (en) * 2019-03-22 2020-09-29 日东电工株式会社 Back grinding belt
CN111748298A (en) * 2019-03-26 2020-10-09 日东电工株式会社 Transparent adhesive sheet and transparent adhesive sheet with release material

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4954572B2 (en) * 2006-02-20 2012-06-20 日東電工株式会社 Protective sheet for semiconductor wafer processing, and semiconductor wafer processing method using the same
JP2009277860A (en) * 2008-05-14 2009-11-26 Toyobo Co Ltd Back grinding tape
WO2013136897A1 (en) * 2012-03-12 2013-09-19 リンテック株式会社 Back-grind-sheet substrate and adhesive sheet, method for producing substrate and sheet, and method for producing workpiece
KR101795101B1 (en) * 2013-10-23 2017-11-07 주식회사 엘지화학 Laminate including optically clear adhesive layer and method of preparing the same
KR102232335B1 (en) * 2014-03-26 2021-03-25 린텍 가부시키가이샤 Adhesive composition, adhesive agent, and adhesive sheet
JP7488678B2 (en) * 2020-03-30 2024-05-22 リンテック株式会社 Protective sheet for semiconductor processing and method for manufacturing semiconductor device

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011074246A (en) * 2009-09-30 2011-04-14 Hitachi Chem Co Ltd Film like adhesive
JP2011171711A (en) * 2010-01-21 2011-09-01 Hitachi Chem Co Ltd Adhesive film for semiconductor wafer processing
JP2011195598A (en) * 2010-03-17 2011-10-06 Hitachi Maxell Ltd Energy ray curable adhesive tape for wafer protection
TW201211188A (en) * 2010-09-09 2012-03-16 Hitachi Chemical Co Ltd Adhesive composition, adhesive sheet used to connect electric circuit components and preparation method of semiconductor device
CN104781912A (en) * 2012-11-20 2015-07-15 古河电气工业株式会社 Method for manufacturing semiconductor chips and surface protective tape for thin-film grinding used in same
CN104955912A (en) * 2013-05-28 2015-09-30 琳得科株式会社 Adhesive agent composition, adhesive sheet, and method for manufacturing semiconductor device
CN104592905A (en) * 2013-10-31 2015-05-06 藤森工业株式会社 Light-diffusing adhesive layer and light-diffusing adhesive film
CN107112230A (en) * 2015-03-16 2017-08-29 古河电气工业株式会社 Semiconductor crystal wafer processing adhesive tape
CN108701641A (en) * 2016-02-22 2018-10-23 琳得科株式会社 Protective film forms the manufacturing method with piece, the manufacturing method of protective film formation piece and semiconductor device
CN108701601A (en) * 2016-03-03 2018-10-23 琳得科株式会社 The manufacturing method of semiconductor machining adhesive tape and semiconductor device
CN107400469A (en) * 2016-05-18 2017-11-28 日东电工株式会社 Grinding back surface band
CN110819249A (en) * 2018-08-07 2020-02-21 日东电工株式会社 Back grinding belt
CN111716242A (en) * 2019-03-22 2020-09-29 日东电工株式会社 Back grinding belt
CN111748298A (en) * 2019-03-26 2020-10-09 日东电工株式会社 Transparent adhesive sheet and transparent adhesive sheet with release material

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