CN115693356A - Laser, temperature control method of laser, and gas detection device - Google Patents
Laser, temperature control method of laser, and gas detection device Download PDFInfo
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- CN115693356A CN115693356A CN202211209396.1A CN202211209396A CN115693356A CN 115693356 A CN115693356 A CN 115693356A CN 202211209396 A CN202211209396 A CN 202211209396A CN 115693356 A CN115693356 A CN 115693356A
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 230000003321 amplification Effects 0.000 claims description 3
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Abstract
The invention discloses a laser, a temperature control method of the laser and a gas detection device, wherein the laser comprises: a circuit board; the laser chip is arranged on the circuit substrate and used for emitting laser signals; the optical path turning structure is arranged on the circuit substrate and is used for turning the optical path of the laser signal; the thermistor is arranged on the circuit substrate, is connected with the control modulation circuit and is used for measuring the temperature of the laser to obtain a measured temperature; and the heating resistor is arranged on the circuit substrate, is connected with the control modulation circuit and is used for heating the laser. The temperature control precision of the laser can reach +/-0.1 ℃, the performance index can meet the use requirement of laser gas detection, the production cost is reduced, and the laser is favorable for wide popularization and use.
Description
Technical Field
The invention relates to the technical field of gas detection, in particular to a laser, a temperature control method of the laser and a gas detection device.
Background
Compared with the traditional gas detection technologies such as electrochemistry, catalytic combustion, semiconductors, infrared and the like, the laser gas detection technology has the remarkable advantages of strong anti-interference, high detection precision and sensitivity, strong environmental adaptability and the like. Therefore, the method is widely applied to the measurement of flammable, explosive, toxic and harmful gases in the fields of public safety, energy conservation, environmental protection, chemical engineering and the like.
The laser gas detection is to adopt specific laser wavelength to carry out absorption measurement on the characteristic fingerprint spectrum of the gas, and the laser wavelength is influenced by the temperature and the modulation current, so the laser wavelength needs to be accurately controlled. At present, a TEC (Thermoelectric coding) chip is adopted to control the temperature of a Laser based on a DFB (Distributed feedback bragg grating) Laser, a QCL (Quantum Cascade) Laser, an ICL (Interband Cascade) Laser, and the like, so as to control the Laser wavelength. However, the existing related laser has the problems of complicated temperature precise control, high price, difficult wide popularization and use and the like.
Disclosure of Invention
The present invention is directed to solving, at least in part, one of the technical problems in the related art. Therefore, the invention aims to provide a laser, a temperature control method of the laser and a gas detection device so as to realize accurate control of the temperature of the laser.
In order to achieve the above object, a first embodiment of the present invention provides a laser, where the laser is connected to a control modulation circuit, and the laser includes: a circuit board; the laser chip is arranged on the circuit substrate and used for emitting laser signals; the optical path turning structure is arranged on the circuit substrate and is used for turning the optical path of the laser signal; the thermistor is arranged on the circuit substrate, is connected with the control modulation circuit and is used for measuring the temperature of the laser to obtain a measured temperature; the heating resistor is arranged on the circuit substrate, is connected with the control modulation circuit and is used for heating the laser; the control modulation circuit generates a PID control signal according to the measured temperature and the set temperature, controls the heating resistor according to the PID control signal, and modulates the laser chip when the measured temperature reaches the set temperature so that the laser chip can emit a laser signal with a specific wavelength.
In addition, the laser of the embodiment of the invention can also have the following additional technical characteristics:
according to an embodiment of the invention, the laser further comprises: and the base is used for placing the circuit substrate and dissipating heat generated by the laser chip during working.
According to an embodiment of the invention, the laser further comprises: and the heat sink carrier is arranged between the circuit substrate and the base and used for dissipating heat generated by the laser chip through the base.
According to an embodiment of the present invention, the optical path turning structure includes: and the right-angle micro prism is arranged on the circuit substrate and is used for reflecting the laser signal by 90 degrees.
According to one embodiment of the invention, the heat sink carrier is formed on the base through a silver paste process, and the circuit substrate and the heat sink carrier are packaged through the silver paste process.
According to one embodiment of the invention, the right-angle microprism and the circuit substrate are packaged through a silver paste process, and the laser chip, the thermistor, the heating resistor and the circuit substrate are packaged through an eutectic process respectively.
According to an embodiment of the invention, the laser signal is a sawtooth wave, or a superposition of a sawtooth wave and a sine wave.
The temperature control precision of the laser can reach +/-0.1 ℃, the performance index can meet the use requirement of laser gas detection, the production cost is reduced, and the laser is beneficial to wide popularization and use.
In order to achieve the above object, a second embodiment of the present invention provides a method for controlling the temperature of a laser, which is the laser provided in the first embodiment. The temperature control method comprises the following steps: acquiring the measured temperature of the thermistor; calculating a difference between the set temperature and the measured temperature when the measured temperature is less than the set temperature; generating a PID control signal according to the difference value, and controlling the heating resistor according to the PID control signal; and when the measured temperature reaches the set temperature, modulating the laser chip so that the laser chip emits a laser signal with a specific wavelength.
The temperature control method of the laser provided by the embodiment of the invention can be combined with the thermistor in the laser and an accurate PID temperature control algorithm to heat the laser to a constant temperature, and the temperature control accuracy can reach +/-0.1 ℃.
In order to achieve the above object, a third embodiment of the present invention provides a gas detection apparatus, including: the laser is used for emitting laser signals; the control modulation circuit is connected with the laser and is used for controlling the temperature of the laser and modulating the laser so as to enable the laser to emit a laser signal with a specific wavelength; the gas chamber is internally provided with gas to be detected, and the laser signal is transmitted to the photoelectric detector after passing through the gas to be detected; the photoelectric detector is used for converting the received laser signal into an electric signal to obtain a detection signal; and the main control circuit is connected with the photoelectric detector and is used for obtaining the concentration value of the gas to be detected according to the detection signal.
In addition, the gas detection device of the embodiment of the invention can also have the following additional technical characteristics:
according to an embodiment of the invention, the gas detection apparatus further comprises: and the detection circuit is connected between the photoelectric detector and the main control circuit and used for processing the detection signal and sending the processed detection signal to the main control circuit, wherein the processing comprises at least one of amplification, filtering and denoising.
The gas detection device provided by the embodiment of the invention has the advantages that the temperature control precision can reach +/-0.1 ℃, the performance index can meet the use requirement of laser gas detection, and the gas detection device is beneficial to wide popularization and use.
Drawings
FIG. 1 is a schematic diagram of a laser according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a laser according to another embodiment of the present invention;
FIG. 3 is a schematic diagram of a laser according to yet another embodiment of the present invention;
FIG. 4 is a schematic external view of a laser according to an embodiment of the present invention;
FIG. 5 is a schematic flow chart of a method for controlling the temperature of a laser according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of the temperature variation of a laser according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a gas detection apparatus according to an embodiment of the present invention;
fig. 8 is a schematic structural view of a gas detection apparatus according to another embodiment of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative and intended to explain the present invention and should not be construed as limiting the present invention.
A laser, a temperature control method of the laser, and a gas detection apparatus according to an embodiment of the present invention will be described below with reference to fig. 1 to 8.
Fig. 1 is a schematic structural diagram of a laser according to an embodiment of the present invention.
The laser 10 is connected to the control modulation circuit 101. As shown in fig. 1, the laser 10 includes: circuit substrate 11, laser chip 12, optical path turning structure 13, thermistor 14 and heating resistor 15.
And the laser chip 12 is arranged on the circuit substrate 11 and used for emitting laser signals.
And the optical path turning structure 13 is arranged on the circuit substrate 11 and is used for performing optical path turning on the laser signal.
And a thermistor 14 provided on the circuit board 11 and connected to the control and modulation circuit 101 for measuring the temperature of the laser 10 to obtain a measured temperature.
And a heating resistor 15 provided on the circuit board 11, connected to the control/modulation circuit 101, and configured to heat the laser 10.
The control modulation circuit 101 generates a PID control signal according to the measured temperature and the set temperature, controls the heating resistor 15 according to the PID control signal, and modulates the laser chip 12 when the measured temperature reaches the set temperature, so that the laser chip 12 emits a laser signal with a specific wavelength.
Specifically, the set temperature is higher than the upper limit temperature of the working environment temperature range. For example, the operating environment temperature range is-10 ℃ to 60 ℃, and the set temperature of the laser 10 may be set to 65 ℃.
Specifically, the laser signal is a sawtooth wave, or a superposition wave of the sawtooth wave and a sine wave.
Specifically, the laser chip 12, the thermistor 14, the heating resistor 15, and the circuit board 11 are packaged by a eutectic process, respectively.
The temperature control precision of the laser can reach +/-0.1 ℃, the performance index can meet the use requirement of laser gas detection, the production cost is reduced, and the laser is beneficial to wide popularization and use.
In one embodiment of the present invention, as shown in fig. 2, the laser 10 further comprises: and the base 16 is used for placing the circuit substrate 11 and dissipating heat generated by the operation of the laser chip 12.
In one embodiment of the present invention, as shown in fig. 3, the laser 10 further comprises: and the heat sink carrier 17 is arranged between the circuit substrate 11 and the base 16 and used for dissipating heat generated by the operation of the laser chip 12 through the base 16.
Specifically, the heat sink carrier 17 is formed on the base 16 by a silver paste process, and the circuit substrate 11 and the heat sink carrier 17 are packaged by the silver paste process.
In one embodiment of the present invention, the optical path turning structure 13 includes: and the right-angle micro prism is arranged on the circuit substrate 11 and is used for reflecting the laser signal by 90 degrees.
Specifically, the right-angle microprism and the circuit substrate 11 are packaged by a silver paste process.
It should be noted that the laser chip 12, the optical path turning structure 13, the thermistor 14 and the heating resistor 15 in fig. 1, fig. 2 and fig. 3 are for showing the relative position relationship between the laser chip and the circuit substrate 11, and the positions of the laser chip, the optical path turning structure, the thermistor and the heating resistor on the circuit substrate 11 can be set according to the needs. For example, the relative positions of the laser chip 12, the optical path-bending structure 13, the thermistor 14 and the heating resistor 15 are shown in fig. 4, where the optical path-bending structure 13 is located on the first side of the laser chip 12, the thermistor 14 is located on the second side of the laser chip 12, and the heating resistor 15 is located on the third side of the laser chip 12 and the first side of the thermistor 14.
The invention further provides a temperature control method of the laser device corresponding to the embodiment.
Fig. 5 is a schematic flow chart of a temperature control method of the laser of the present invention.
As shown in fig. 5, the method for controlling the temperature of the laser includes:
s1, acquiring the measured temperature of the thermistor.
And S2, when the measured temperature is less than the set temperature, calculating the difference between the set temperature and the measured temperature.
And S3, generating a PID control signal according to the difference value, and controlling the heating resistor according to the PID control signal.
And S4, when the measured temperature reaches the set temperature, modulating the laser chip to enable the laser chip to emit a laser signal with a specific wavelength.
As an example, the set temperature of the laser 10 is set to 65 ℃, and the temperature of the laser 10 is precisely controlled using the above-described temperature control method of the laser. As shown in FIG. 6, the temperature control curve fluctuated at a maximum of 65.1 ℃ and a minimum of 64.9 ℃. By the temperature control method of the laser, the temperature control precision is +/-0.1 ℃. As the typical value of the tuning coefficient of the temperature to the laser wavelength is 0.1 nm/DEG C, and the typical value of the laser tuning wavelength bandwidth for gas detection is about 1nm, the method has the advantages that the control precision to the laser wavelength is +/-0.01 nm, the relative error of the wavelength control is +/-1%, and the requirement of the laser gas detection on the wavelength control precision can be met.
The temperature control method of the laser provided by the embodiment of the invention can be combined with the heating resistor, the thermistor and the accurate PID temperature control algorithm in the laser, so that the laser is heated at a constant working temperature, and the temperature control accuracy can reach +/-0.1 ℃.
The invention further provides a gas detection device corresponding to the embodiment.
Fig. 7 is a schematic structural view of the gas detection apparatus of the present invention.
As shown in fig. 7, the gas detection apparatus 100 includes: the laser 10, the control modulation circuit 101, the gas cell 102, the photodetector 103 and the main control circuit 104.
Wherein, the laser 10 is used for emitting laser signals.
And a control modulation circuit 101, connected to the laser 10, for controlling the temperature of the laser 10 and modulating the laser 10 so that the laser 10 emits a laser signal with a specific wavelength.
The gas chamber 102 is provided with gas to be detected, wherein the laser signal is transmitted to the photoelectric detector 103 after passing through the gas to be detected.
And the photoelectric detector 103 is used for converting the received laser signal into an electric signal to obtain a detection signal.
And the main control circuit 104 is connected with the photoelectric detector 103 and is used for obtaining the concentration value of the gas to be detected according to the detection signal.
The gas detection device provided by the embodiment of the invention has the advantages that the temperature control precision can reach +/-0.1 ℃, the performance index can meet the use requirement of laser gas detection, and the gas detection device is beneficial to wide popularization and use.
In one embodiment of the present invention, as shown in fig. 8, the gas detection apparatus 100 further includes: and the detection circuit 105 is connected between the photoelectric detector 103 and the main control circuit 104, and is configured to process the detection signal and send the processed detection signal to the main control circuit 104, where the processing includes at least one of amplification, filtering, and denoising.
It should be noted that the logic and/or steps represented in the flowcharts or otherwise described herein, such as an ordered listing of executable instructions that can be considered to implement logical functions, can be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions. For the purposes of this description, a "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of the computer-readable medium would include the following: an electrical connection (electronic device) having one or more wires, a portable computer diskette (magnetic device), a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). Further, the computer-readable medium could even be paper or another suitable medium upon which the program is printed, as the program can be electronically captured, via for instance optical scanning of the paper or other medium, then compiled, interpreted or otherwise processed in a suitable manner if necessary, and then stored in a computer memory.
It should be understood that portions of the present invention may be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, the various steps or methods may be implemented in software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, any one or combination of the following techniques, which are known in the art, may be used: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application specific integrated circuit having an appropriate combinational logic gate circuit, a Programmable Gate Array (PGA), a Field Programmable Gate Array (FPGA), or the like.
In the description of the specification, reference to the description of "one embodiment," "some embodiments," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Although embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are exemplary and not to be construed as limiting the present invention, and that changes, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. A laser, wherein the laser is configured to be connected to a control modulation circuit, the laser comprising:
a circuit board; the laser chip is arranged on the circuit substrate and used for emitting a laser signal;
the optical path turning structure is arranged on the circuit substrate and is used for turning the optical path of the laser signal;
the thermistor is arranged on the circuit substrate, is connected with the control modulation circuit and is used for measuring the temperature of the laser to obtain a measured temperature;
the heating resistor is arranged on the circuit substrate, is connected with the control modulation circuit and is used for heating the laser;
the control modulation circuit generates a PID control signal according to the measured temperature and the set temperature, controls the heating resistor according to the PID control signal, and modulates the laser chip when the measured temperature reaches the set temperature so that the laser chip can emit a laser signal with a specific wavelength.
2. The laser of claim 1, further comprising:
and the base is used for placing the circuit substrate and dissipating heat generated by the laser chip during working.
3. The laser of claim 2, further comprising:
and the heat sink carrier is arranged between the circuit substrate and the base and used for dissipating heat generated by the laser chip through the base.
4. The laser of claim 3, wherein the optical path-turning structure comprises:
and the right-angle micro prism is arranged on the circuit substrate and is used for reflecting the laser signal by 90 degrees.
5. The laser of claim 4, wherein the heat sink carrier is formed on the base by a silver paste process, and the circuit substrate and the heat sink carrier are encapsulated by a silver paste process.
6. The laser of claim 4, wherein the right-angle microprism and the circuit substrate are packaged by a silver paste process, and the laser chip, the thermistor, the heating resistor and the circuit substrate are packaged by a eutectic process respectively.
7. The laser of claim 1, wherein the laser signal is a sawtooth wave or a superposition of a sawtooth wave and a sine wave.
8. A method for controlling the temperature of a laser according to any one of claims 1 to 7, the method comprising:
acquiring the measured temperature of the thermistor;
calculating a difference between the set temperature and the measured temperature when the measured temperature is less than the set temperature;
generating a PID control signal according to the difference value, and controlling the heating resistor according to the PID control signal;
and when the measured temperature reaches the set temperature, modulating the laser chip so that the laser chip emits a laser signal with a specific wavelength.
9. A gas detection apparatus, characterized in that the apparatus comprises:
the laser according to any one of claims 1-7, for emitting a laser signal;
the control modulation circuit is connected with the laser and is used for controlling the temperature of the laser and modulating the laser so as to enable the laser to emit a laser signal with a specific wavelength;
the gas chamber is internally provided with gas to be detected, and the laser signal is transmitted to the photoelectric detector after passing through the gas to be detected;
the photoelectric detector is used for converting the received laser signal into an electric signal to obtain a detection signal;
and the main control circuit is connected with the photoelectric detector and used for obtaining the concentration value of the gas to be detected according to the detection signal.
10. The gas detection apparatus of claim 9, the apparatus further comprising:
and the detection circuit is connected between the photoelectric detector and the main control circuit and used for processing the detection signal and sending the processed detection signal to the main control circuit, wherein the processing comprises at least one of amplification, filtering and denoising.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211209396.1A CN115693356A (en) | 2022-09-30 | 2022-09-30 | Laser, temperature control method of laser, and gas detection device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211209396.1A CN115693356A (en) | 2022-09-30 | 2022-09-30 | Laser, temperature control method of laser, and gas detection device |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020121671A1 (en) * | 2001-03-02 | 2002-09-05 | The Furukawa Electric Co., Ltd. | Semiconductor laser device and semiconductor laser module |
| CN101341636A (en) * | 2005-12-20 | 2009-01-07 | 菲尼萨公司 | Modular transistor outline can with internal components |
| CN102967580A (en) * | 2012-11-09 | 2013-03-13 | 山东微感光电子有限公司 | VCSEL (vertical cavity surface emitting laser)-based low-power-consumption gas detection method and device |
| CN108512030A (en) * | 2017-02-24 | 2018-09-07 | 中国科学院半导体研究所 | Laser beam emitting device |
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- 2022-09-30 CN CN202211209396.1A patent/CN115693356A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020121671A1 (en) * | 2001-03-02 | 2002-09-05 | The Furukawa Electric Co., Ltd. | Semiconductor laser device and semiconductor laser module |
| CN101341636A (en) * | 2005-12-20 | 2009-01-07 | 菲尼萨公司 | Modular transistor outline can with internal components |
| CN102967580A (en) * | 2012-11-09 | 2013-03-13 | 山东微感光电子有限公司 | VCSEL (vertical cavity surface emitting laser)-based low-power-consumption gas detection method and device |
| CN108512030A (en) * | 2017-02-24 | 2018-09-07 | 中国科学院半导体研究所 | Laser beam emitting device |
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Application publication date: 20230203 |