CN115684249A - Photoetching machine and method for measuring evaporation power of liquid film on substrate surface of photoetching machine - Google Patents
Photoetching machine and method for measuring evaporation power of liquid film on substrate surface of photoetching machine Download PDFInfo
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Abstract
The invention provides a photoetching machine, which comprises an irradiation system, a mask, a projection system, a substrate and a substrate surface liquid film evaporation power measuring device, wherein the substrate surface liquid film evaporation power measuring device comprises a substrate bearing unit, a fluid transmission unit, a fluid flow control unit, a fluid temperature control unit and a fluid temperature measuring unit, the substrate bearing unit is used for bearing the substrate, and the substrate bearing unit is of a hollow structure; the fluid transmission unit is used for introducing fluid media into the substrate bearing unit, the fluid media are gases, the fluid flow control unit is used for controlling and measuring the flow rate of the fluid media flowing into the substrate bearing unit, and the fluid temperature measuring unit is used for measuring the temperature difference of the fluid media flowing into and out of the substrate bearing unit. The gas is used as a fluid medium, so that the requirements on flow control precision and temperature measurement precision can be obviously reduced.
Description
Technical Field
The invention relates to the technical field of photoetching machines, in particular to a photoetching machine and a method for measuring the evaporation power of a liquid film on the surface of a substrate of the photoetching machine.
Background
FIG. 1 is a schematic diagram of an immersion lithography machine. The illumination system 101 forms a beam of light that projects a pattern on the mask 102 through the projection system 104 onto the substrate 108. The mask 102 is supported by a mask stage 103. The substrate 108 is supported by a moving stage 107, and the moving stage 107 can move at a high speed in the horizontal direction. The projection system 104 is supported by a frame 105. An immersion fluid maintenance system 106 is positioned between the projection system 104 and the motion stage 107 so that the propagation medium for the beam in this region is water. When the motion stage 107 moves at a high speed, the immersion liquid maintenance system 106 is divided into two parts, and the immersion liquid maintenance system 106 ensures that the liquid does not flow out from the gap between the two parts, but cannot avoid dragging the residual liquid film of hundreds of nanometers. The liquid film is evaporated and refrigerated in the air, so that the temperature of the substrate is reduced, and deformation is generated. The cooling power generated by the evaporation of the residual liquid film on the surface of the substrate is small (generally less than 5W), but the projection precision of the pattern is influenced by slight deformation. Therefore, the evaporation power needs to be measured to make a corresponding temperature compensation strategy. The evaporation power cannot be directly measured, but the temperature measurement result can be converted into the size of the evaporation power. The liquid film is generated when the motion platform moves at a high speed, and the covering area and the shape of the liquid film can be changed along with the motion state at any time.
Fig. 2 is a typical apparatus for measuring evaporation power, including a substrate carrying unit 111 for carrying a substrate 108; a water inlet pipeline 109 is arranged in the substrate bearing unit 111; the inlet of the water inlet pipe 109 is provided with a first temperature sensor 110a for measuring the temperature of water at the inlet; the outlet of the water inlet pipe 109 is provided with a second temperature sensor 110b for measuring the temperature of water at the outlet. The substrate support unit 111 is, for example, in a disk shape, and the structure of the substrate support unit 111 is not limited to a disk, and may be a square shape or any other shape, and may cover the entire substrate. The size of the obtained evaporation power is calculated by measuring the temperature difference between an inlet and an outlet:
wherein dQ/dt is the endothermic power of water, in W; c is the specific heat capacity of water, 4.18 kJ/(kg. DEG C); ρ is the density of water; dV/dt is the flow rate of water; Δ T is the temperature difference measured at the inlet and outlet.
When the evaporation power is constant, the flow rate of water is inversely proportional to the temperature difference measured by the sensor. The larger the flow of water is, the smaller the temperature difference between the inlet and the outlet is, and the higher the required measurement precision of the sensor is; the lower the precision of the selected sensor, the smaller the required flow rate, and the higher the flow control precision requirement. Assuming that the evaporation power is-5W, it can be obtained: (dV/dt) · Δ T = -0.072 ℃ · L/min, where dV/dt is the flow rate of water and Δ T is the temperature difference measured at the inlet and outlet. It is assumed that the flow is controlled at 0.7L/min, and the temperature difference between the inlet and the outlet is about-0.1 ℃. The measurement accuracy, even when calculated at a poor 5%, places high demands on the flow control and temperature measurement accuracy. If the actually measured evaporation power is smaller, the precision requirement is further improved.
Disclosure of Invention
The invention aims to provide a photoetching machine and a method for measuring the evaporation power of a liquid film on the surface of a substrate of the photoetching machine, so as to solve the problems of flow control and overhigh temperature measurement precision required when the evaporation power is measured.
In order to solve the technical problem, the invention provides a lithography machine, which comprises an illumination system, a mask, a projection system, a substrate and a substrate surface liquid film evaporation power measuring device, wherein the illumination system projects a pattern on the mask onto the substrate through the projection system; the device for measuring the evaporation power of the liquid film on the surface of the substrate comprises a substrate bearing unit, a fluid transmission unit, a fluid flow control unit, a fluid temperature control unit and a fluid temperature measuring unit, wherein the substrate bearing unit is used for bearing the substrate and is of a hollow structure; the fluid transmission unit is used for introducing fluid media into the substrate bearing unit, the fluid media are gases, the fluid flow control unit is used for controlling and measuring the flow rate of the fluid media flowing into the substrate bearing unit, the fluid temperature control unit is used for controlling the temperature of the fluid media flowing into the substrate bearing unit, and the fluid temperature measurement unit is used for measuring the temperature difference of the fluid media flowing into and out of the substrate bearing unit.
Optionally, the substrate carrying unit comprises a fluid inlet and a fluid outlet, the fluid conveying unit is communicated with the fluid inlet through the fluid inlet, and the fluid outlet is communicated with the fluid outlet.
Optionally, the fluid temperature measuring unit comprises a first temperature sensor and a second temperature sensor; the first temperature sensor is arranged at the fluid input unit and used for measuring the temperature of the fluid medium flowing into the substrate bearing unit; the second temperature sensor is arranged at the fluid output unit and used for measuring the temperature of the fluid medium flowing out of the substrate bearing unit.
Optionally, at least one rib is disposed inside the substrate bearing unit.
Optionally, a plurality of rib plates are arranged inside the substrate bearing unit, and the plurality of rib plates are arranged in a staggered array.
Optionally, the rib plate is linear or curved.
Optionally, the rib has a J-shape.
Optionally, the fluid medium is air or an inert gas.
Optionally, the fluid temperature control unit is a heat exchanger.
Optionally, the flow control unit is a volume flow control unit or a mass flow control unit.
Based on the same inventive concept, the present invention further provides a method for measuring substrate surface liquid film evaporation power of a lithography machine, wherein the substrate surface liquid film evaporation power of the lithography machine is measured by using any one of the above-mentioned devices for measuring substrate surface liquid film evaporation power of a lithography machine, the substrate is placed on a substrate carrying unit, and a fluid medium introduced into the substrate carrying unit is a gas, the method for measuring substrate surface liquid film evaporation power of a lithography machine comprises:
measuring the flow rate of the fluid medium flowing into the substrate carrying unit and the temperature difference of the fluid medium flowing into and out of the substrate carrying unit; and (c) a second step of,
and obtaining the evaporation power of the liquid film on the surface of the substrate according to the flow rate of the fluid medium flowing into the substrate bearing unit and the temperature difference of the fluid medium flowing into the substrate bearing unit and the fluid medium flowing out of the substrate bearing unit.
The invention provides a photoetching machine and a method for measuring the substrate surface liquid film evaporation power of the photoetching machine, wherein the photoetching machine comprises a substrate surface liquid film evaporation power measuring device, the substrate surface liquid film evaporation power measuring device comprises a substrate bearing unit, a fluid transmission unit, a fluid flow control unit, a fluid temperature control unit and a fluid temperature measuring unit, the temperature difference of a fluid medium is obtained by measuring the temperature of the fluid medium before and after the fluid medium enters the substrate bearing unit, and the flow of the fluid medium is obtained according to the fluid flow control unit so as to calculate the substrate surface liquid film evaporation power; in the invention, the fluid medium is gas, the temperature of the substrate is maintained by introducing the gas into the substrate bearing unit, and the gas is used as the fluid medium, so that the requirements on flow control precision and temperature measurement precision can be obviously reduced; furthermore, a plurality of rib plates are arranged inside the substrate bearing unit, so that the contact area of fluid and solid is increased, and gas flows through the cross section more uniformly.
Drawings
FIG. 1 is a schematic view of an immersion lithography machine;
FIG. 2 is a schematic view of an apparatus for measuring evaporation power of a liquid film on a substrate surface;
FIG. 3 is a schematic view of an apparatus for measuring an evaporation power of a liquid film on a surface of a substrate according to an embodiment of the present invention;
FIG. 4 is a schematic view of a rib inside the substrate supporting unit according to the first embodiment of the present invention;
FIG. 5 is a graph of a simulation of the exit temperature-time curve of the liquid film evaporation process according to the first embodiment of the present invention;
FIG. 6 is a schematic view of another rib inside the substrate supporting unit according to the second embodiment of the present invention;
FIG. 7 is a schematic illustration of the coanda effect and the local turbulence created by wall separation for a second embodiment of the present invention;
FIG. 8 shows the simulation results of the gas flow line in the second embodiment of the present invention;
in the figure, the position of the upper end of the main shaft,
101-a lighting system; 102-a mask; 103-a mask table; 104-a projection system; 105-a frame; 106-an immersion liquid maintenance system; 107-motion stage; 108-a substrate; 109-a water inlet pipe; 110 a-a first temperature sensor; 110b a second temperature sensor; 111-a substrate carrying unit; 20-a substrate carrying unit; 201-a fluid input unit; 202-a fluid output unit; 203 a-a first temperature sensor; 203 b-a second temperature sensor; 204-a fluid flow control unit; 205-heat exchanger; 206 a-rib; 206 b-rib plate; 207-fluid transfer unit.
Detailed Description
The following describes a lithography machine and a method for measuring the evaporation power of a liquid film on the surface of a substrate of a lithography machine in further detail with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
[ EXAMPLES one ]
Specifically, referring to fig. 3 and 4, fig. 3 is a schematic view of an evaporation power measuring device for a liquid film on a substrate surface according to a first embodiment of the present invention, and fig. 4 is a schematic view of a rib plate inside a substrate carrying unit according to a first embodiment of the present invention. As shown in fig. 3 and 4, the present embodiment provides a lithography machine, which includes an illumination system 101, a mask 102, a projection system 104, a substrate 108, and a substrate surface liquid film evaporation power measuring device, wherein the illumination system 101 projects a pattern on the mask 102 onto the substrate 108 through the projection system 104; the substrate surface liquid film evaporation power measuring device comprises a substrate bearing unit 20, a fluid transmission unit 201, a fluid flow control unit, a fluid temperature control unit and a fluid temperature measuring unit, wherein the substrate bearing unit 20 is used for bearing a substrate 108, and the substrate bearing unit 20 is of a hollow structure; the fluid transfer unit 207 is configured to introduce a fluid medium into the substrate supporting unit 20, where the fluid medium is a gas, the fluid flow control unit is configured to control and measure a flow rate of the fluid medium flowing into the substrate supporting unit 20, the fluid temperature control unit is configured to control a temperature of the fluid medium flowing into the substrate supporting unit 20, and the fluid temperature measurement unit is configured to measure a temperature difference between the fluid medium flowing into and flowing out of the substrate supporting unit 20.
The apparatus further comprises a fluid input unit 201 and a fluid output unit 202, the substrate carrying unit 20 comprises a fluid inlet and a fluid outlet, the fluid transfer unit 207 is in communication with the fluid inlet through the fluid input unit 201, and the fluid output unit 202 is in communication with the fluid outlet.
The fluid temperature measuring unit includes a first temperature sensor 110a and a second temperature sensor 110b; the first temperature sensor 110a is disposed at the fluid input unit 201 for measuring a temperature of the fluid medium flowing into the substrate carrying unit 20; the second temperature sensor 110b is disposed at the fluid output unit 202 for measuring the temperature of the fluid medium flowing out of the substrate carrying unit 20.
In this embodiment, the substrate carrying unit 20 is fixed to a motion stage (not shown in fig. 3) and can move at a high speed together with the motion stage. The substrate-carrying unit 20 is used to support a carrying substrate 208, and the temperature of the substrate 208 can be controlled by controlling the temperature of the substrate-carrying unit 20 to compensate for the temperature of the surface of the substrate 208 decreased by evaporation of the residual liquid film.
The size of the substrate carrying unit 20 is preferably larger than the size of the substrate, for example, the substrate is a 12-inch wafer, and then the substrate carrying unit 20 is circular and has a diameter larger than 300mm, for example, to satisfy the evaporation power test on the whole substrate. The substrate support unit 20 has a structure in which the wall is as thin as possible to allow the fluid to approach the substrate surface, and the wall thickness of the substrate support unit 20 on the side close to the substrate is, for example, less than 2mm. Preferably, the material of the substrate carrying unit 20 is a high thermal conductivity material, the thermal conductivity of the material of the substrate carrying unit 20 is, for example, greater than or equal to 100W/(m · ° c), and specifically, the material of the substrate carrying unit 20 is, for example, an aluminum alloy or a silicon carbide ceramic. For air media, the problem of liquid leakage does not exist, the substrate bearing unit 20 can be manufactured by thin plate welding or 3D printing, the structural design of the flow channel is more flexible, and of course, other processing and manufacturing methods can be used in specific implementation. In addition to the upper surface (the side close to the substrate) for which the evaporation power needs to be measured, the side and lower surfaces of the substrate carrying unit 20 may be coated with a heat insulating material, further reducing the influence of external conditions.
Further, the fluid input unit 201 is, for example, an air inlet pipeline, the fluid output unit 202 is, for example, an air outlet pipeline, the fluid transmission unit 207 is, for example, an air transmission pipeline, and the fluid input unit 201 and the fluid transmission unit 207 are communicated with each other.
Referring to fig. 4, at least one rib 206a is disposed inside the substrate carrying unit 20; in this embodiment, a plurality of ribs 206a are disposed inside the substrate carrying unit 20, and the plurality of ribs 206a are disposed in a staggered array. The rib 206a may have a linear shape, or other shapes such as a curved shape, for example, which is not limited in this embodiment. The ribs 206a primarily function to increase the flow solid contact area and to make the flow more uniform across the cross-section. The product hA of the total internal structure area A (including the areas of the internal upper and lower surfaces and the rib plate side surfaces) and the convective heat transfer coefficient of the substrate carrying unit 20 should be greater than 35W/DEG C. For example, at the gas flow rate of 200L/min, the convective heat transfer coefficient is 70W/(m) through the arrangement of the rib plates 2 DEG C.), the area reaches 0.5m 2 And the measurement requirement can be better met at the moment.
The fluid medium may be air or an inert gas. The air medium is adopted to replace water, so that the requirements on flow control precision and temperature measurement precision can be obviously improved. Still take the evaporation power of-5W as an example, when an air medium is adopted, the product of the flow and the temperature difference is (dV/dt) · delta T = -248 ℃ and L/min, and water is used as the medium for times of 3400, so that the requirements on the flow control precision and the temperature measurement precision are obviously reduced.
The fluid temperature control unit is a heat exchanger 205, and the heat exchanger 205 is located on the fluid input unit 207 before the fluid enters the substrate carrying unit 20. The heat exchanger 205 is used to ensure that the temperature of the fluid entering the substrate carrier unit 20 is in accordance with the ambient control temperature.
In this embodiment, the fluid Flow control unit 204 is a volume Flow control unit, and the fluid Flow control unit 204 is also referred to as FC (Flow Controller). The fluid flow control unit 204 is used to achieve and maintain the fluid flow at a desired flow rate.
In other embodiments, the substrate surface liquid film evaporation power measuring device can be further provided with relevant acquisition equipment, recording equipment, monitoring equipment and parameter adjusting equipment.
Based on the same inventive concept, an embodiment of the present invention further provides a method for measuring an evaporation power of a liquid film on a substrate surface of a lithography machine, the method comprising the steps of measuring the evaporation power of the liquid film on the substrate surface of the lithography machine by using a device for measuring the evaporation power of the liquid film on the substrate surface of the lithography machine, placing the substrate on a substrate carrying unit, and introducing a fluid medium into the substrate carrying unit as a gas, wherein the method comprises the following steps:
step S10, measuring the flow rate of the fluid medium flowing into the substrate bearing unit and the temperature difference of the fluid medium flowing into and out of the substrate bearing unit; and the number of the first and second groups,
and S20, obtaining the evaporation power of the liquid film on the surface of the substrate according to the flow rate of the fluid medium flowing into the substrate bearing unit and the temperature difference of the fluid medium flowing into the substrate bearing unit and the fluid medium flowing out of the substrate bearing unit.
Step S10 includes the substeps of:
step S11, the fluid flow control unit 204 is opened, the fluid medium enters the substrate carrying unit 20 through the fluid input unit 201, and the flow rate of the fluid medium is measured by the fluid flow control unit.
In step S12, the first temperature sensor 203a measures a first temperature of the fluid medium before entering the substrate carrying unit 20.
In step S13, the fluid medium flows through the substrate support unit 20 and then enters the fluid output unit 202, and the second temperature sensor 203b measures the second temperature of the fluid medium after flowing out of the substrate support unit 20.
Step S14, calculating a difference between the temperatures of the fluid media flowing into and out of the substrate carrying unit 20 according to the first temperature and the second temperature.
Before step S11, i.e. before the fluid medium enters the substrate carrying unit 20, the heat exchanger 205 performs temperature control on the fluid medium to obtain that the temperature of the fluid medium entering the substrate carrying unit 20 is consistent with the ambient temperature.
In step S14, the difference between the first temperature and the second temperature is Δ T, the fluid flow control unit measures the flow rate of the fluid medium as dV/dt, and calculates the substrate surface liquid film evaporation power from the temperature difference Δ T before and after entering the substrate carrying unit 20 and the dV/dt of the flow rate of the fluid medium:
wherein dQ/dt is the endothermic power of the fluid, in W; c is the specific heat capacity of the fluid; ρ is the density of the fluid; dV/dt is the flow rate of the fluid; Δ T is the temperature difference measured at the inlet and outlet ends.
FIG. 5 is a graph of a simulation of the exit temperature-time curve of the liquid film evaporation process according to the first embodiment of the present invention; the embodiment provides a method for simulating the evaporation power of a liquid film on the surface of a substrate of a lithography machine, which comprises the following steps:
and S31, acquiring the surface temperature change of the substrate and the temperature change of the outlet of the pipeline caused by the evaporation of the liquid film.
And step S32, obtaining the area and the evaporation power of the liquid film and the temperature fluctuation of the outlet of the pipeline along with time.
And S33, putting the measured values into a CFD model, and simulating to obtain the relation between the temperature measurement value and the evaporation power.
In step S31, the surface temperature change of the silicon wafer and the temperature change of the outlet of the pipeline caused by the evaporation of the liquid film are obtained during the high-speed movement of the moving table.
In step S32, the horizontal movement track of the motion stage is complex, the movement speeds in two directions are constantly changed, the area and evaporation power of the liquid film are constantly changed, and the temperature at the outlet of the pipeline fluctuates with time.
In step S33, the CFD model also takes the motion trajectory and environmental factors into account in the simulation model.
According to the simulation method for the substrate surface liquid film evaporation power of the lithography machine, the relationship between the temperature measurement value and the evaporation power can be obtained through analysis, and the accuracy of evaporation power measurement is greatly improved.
[ example two ]
The difference from the embodiment is that, in the embodiment, the shape of the rib 206b is curved. Further, the rib 206b has a J-shape. The ribs 206b are staggered. The flow channel is designed to be turbulent flow so as to increase the heat convection capability of the fluid medium.
FIG. 6 is a schematic view of another rib inside the substrate supporting unit according to the second embodiment of the present invention; FIG. 7 is a schematic illustration of the coanda effect and the local turbulence created by the wall separation of the second embodiment of the present invention; in this embodiment, the rib 206b includes a straight portion and an arc portion, the rib 206b has a J-shape, and the ribs 206b are arranged in a staggered manner. From the structural point of view, the flow channel is generally divided into two parts. A part of the opposite side of the J-shaped tip has a longer path, and the gas flows in a curved line, and the contact area with the rib 206b is also larger. The other part of the J-shaped tip is opposite to the other part of the J-shaped tip, gas tends to flow along the wall surface according to the coanda effect, the wall surface separation is started after a certain distance, the arc line of the J-shaped back surface enables the gas to flow along the curve in the part of the flow channel on one hand, and on the other hand, according to the fluid characteristics, turbulence is generated at the part of the wall surface separation, so that the local convective heat transfer coefficient is increased, as shown in figure 7.
Fig. 8 is a simulation result of the gas flow line according to the second embodiment of the present invention, and it can be seen from fig. 8 that the ribs 206b are arranged in a staggered J-shape, and the coanda effect and the wall separation phenomenon are generated in the fluid medium.
In this embodiment, part of the heat transfer occurs between the surface of the substrate 208 and the air during motion of the motion stage, and the rate of heat transfer from the solid structure (substrate and the substrate-carrying unit) to the fluid can be expressed as dQ h /dt＝hA(T s -T f ) Wherein h is the convective heat transfer coefficient, A is the contact area of the fluid-solid interface, and T s Is the temperature of the solid, T f Is ambient temperature, dQ h And/dt is the heat transfer rate of the fluid. In order to reduce the measuring processAnd controlling the temperature of the environment and the fluid in the substrate bearing unit to be the same under the influence of other factors, wherein the factor influencing the heat transfer rate is the product hA of the convective heat transfer coefficient and the area. The convective heat transfer coefficient of the surface of the substrate 208 is 5W/(m) under the typical motion speed and trajectory of the motion table 2 DEG C.), 12 inch gauge base area of about 0.07m 2 And hA is 0.35W/DEG C. The flow channel is designed to be turbulent flow so as to increase the heat convection capability of the fluid medium. When water is used as a medium, the flow rate is assumed to be 1L/min and is 200-500W/DEG C according to different flow channel structures hA. When an air medium is adopted, the flow is calculated at 200L/min, and the convection heat transfer coefficient h is more than or equal to 70W/(m) through structural design 2 DEG C) when the area is more than 0.5m 2 When the temperature is higher than or equal to 35W/DEG C, hA is 100 times of the heat exchange of the substrate 208 to the environment, and 99% of heat is taken away by the medium in the flow channel. The h and A are easy to design and meet the requirements for air with the flow rate of 200L/min, for example, a large number of fins are arranged in the structure, and the liquid leakage condition does not need to be considered, so that the liquid leakage can be processed and manufactured by using a welding or 3D printing mode.
Through runner structural design, adopt the air medium can take away most heat, the heat transfer of basement surface to the environment can be neglected to water is better as the medium, but the influence of little promotion to the measuring result can be neglected. The flow control precision requirement of the air medium is far lower than that of water, the temperature change is more than 10 times of that of the water, and the temperature measurement precision requirement is obviously reduced.
[ EXAMPLE III ]
The difference from the first embodiment is that, in this embodiment, the flow control unit is a mass flow control unit. Considering the measurement principle of this embodiment, the gas has compressibility, the measurement accuracy is reduced due to the changed density, and a Mass Flow Controller (MFC) is more suitable.
Due to the compressibility of the gas, the varying density results in a reduction in measurement accuracy, and a Mass Flow Controller (MFC) is more suitable. In this embodiment, the fluid flow control unit 204 is a mass flow control unit. The formula of the measurement principle is rewritten into the following form, and the influence of the gas density change on the measurement precision is eliminated.
Wherein dQ/dt is the heat absorption power of the fluid and is expressed in W; c is the specific heat capacity of the fluid; dm/dt is the mass flow of the fluid; Δ T is the temperature difference measured at the inlet and outlet ends.
[ EXAMPLE IV ]
The difference from the first embodiment is that in the first embodiment, the surface of the substrate carrying unit 20 is coated with a film to make the surface characteristics of the substrate consistent with the surface of the substrate, so that the substrate does not need to be placed, the wall thickness between the flow channel and the evaporation surface can be reduced, and the heat transfer efficiency inside the structural member can be improved.
And depositing a layer of film on the upper surface of the substrate bearing unit 20, wherein the property of the film is the same as that of the substrate, so that the evaporation characteristic of the surface of the film is consistent with the actual working state, and the factor influencing the evaporation characteristic is the contact angle of water on the surface of the substrate. Therefore, a thin film having the same property as the substrate is deposited on the upper surface of the substrate support unit 20, so as to reduce the wall thickness between the flow channel and the evaporation surface and improve the heat transfer efficiency inside the structural member.
In summary, the lithography machine and the method for measuring the evaporation power of the liquid film on the substrate surface of the lithography machine provided by the embodiment of the invention include a substrate surface liquid film evaporation power measuring device, wherein the substrate surface liquid film evaporation power measuring device includes a substrate bearing unit, a fluid transmission unit, a fluid flow control unit, a fluid temperature control unit and a fluid temperature measuring unit, the temperature difference of the fluid medium is obtained by measuring the temperature of the fluid medium before and after the fluid medium enters the substrate bearing unit, and the flow of the fluid medium is obtained according to the fluid flow control unit to calculate the evaporation power of the liquid film on the substrate surface; in the invention, the fluid medium is gas, the temperature of the substrate is maintained by introducing the gas into the substrate bearing unit, and the gas is used as the fluid medium, so that the requirements on flow control precision and temperature measurement precision can be obviously reduced; and a plurality of ribbed plates are arranged in the substrate bearing unit, so that the contact area of fluid and solid is increased, and gas flows through the cross section more uniformly. .
It should be noted that, in the present specification, the embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, similar parts between the embodiments may be referred to each other, and different parts between the embodiments may also be used in combination with each other, which is not limited by the present invention.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (11)
1. A lithography machine comprising an illumination system, a mask, a projection system, a substrate and a substrate surface liquid film evaporation power measuring device, wherein the illumination system projects a pattern on the mask onto the substrate through the projection system; the device for measuring the evaporation power of the liquid film on the surface of the substrate comprises a substrate bearing unit, a fluid transmission unit, a fluid flow control unit, a fluid temperature control unit and a fluid temperature measuring unit, wherein the substrate bearing unit is used for bearing the substrate and is of a hollow structure; the fluid transmission unit is used for introducing fluid media into the substrate bearing unit, the fluid media are gases, the fluid flow control unit is used for controlling and measuring the flow rate of the fluid media flowing into the substrate bearing unit, the fluid temperature control unit is used for controlling the temperature of the fluid media flowing into the substrate bearing unit, and the fluid temperature measurement unit is used for measuring the temperature difference of the fluid media flowing into and out of the substrate bearing unit.
2. The lithography machine of claim 1, further comprising a fluid input unit and a fluid output unit, said substrate carrying unit comprising a fluid inlet and a fluid outlet, said fluid transfer unit being in communication with said fluid inlet through said fluid input unit, said fluid output unit being in communication with said fluid outlet.
3. A lithographic apparatus according to claim 2, wherein said fluid temperature measurement unit comprises a first temperature sensor and a second temperature sensor; the first temperature sensor is arranged at the fluid input unit and used for measuring the temperature of the fluid medium flowing into the substrate bearing unit; the second temperature sensor is arranged at the fluid output unit and used for measuring the temperature of the fluid medium flowing out of the substrate bearing unit.
4. A lithographic apparatus according to claim 1, wherein at least one rib is provided inside said substrate carrying unit.
5. A lithography machine according to claim 4, wherein a plurality of ribs are provided inside said substrate carrying unit, said plurality of ribs being arranged in a staggered array.
6. The lithography machine as claimed in claim 4, wherein said ribs are linear or curvilinear in shape.
7. A lithographic apparatus according to claim 6, wherein said rib is J-shaped.
8. The lithography machine according to claim 1, wherein said fluid medium is air or an inert gas.
9. The lithography machine of claim 1, wherein said fluid temperature control unit is a heat exchanger.
10. The lithography machine of claim 1, wherein said flow control unit is a volumetric flow control unit or a mass flow control unit.
11. A method for measuring an evaporation power of a liquid film on a substrate surface of a lithography machine, wherein the evaporation power of the liquid film on the substrate surface of the lithography machine is measured by using the apparatus for measuring an evaporation power of a liquid film on a substrate surface of a lithography machine according to any one of claims 1 to 10, the substrate is placed on a substrate-holding unit, and a fluid medium introduced into the substrate-holding unit is a gas, the method for measuring an evaporation power of a liquid film on a substrate surface of a lithography machine comprising:
measuring the flow rate of the fluid medium flowing into the substrate carrying unit and the temperature difference of the fluid medium flowing into and out of the substrate carrying unit; and the number of the first and second groups,
and obtaining the evaporation power of the liquid film on the surface of the substrate according to the flow rate of the fluid medium flowing into the substrate bearing unit and the temperature difference of the fluid medium flowing into the substrate bearing unit and the fluid medium flowing out of the substrate bearing unit.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117554410A (en) * | 2024-01-09 | 2024-02-13 | 江苏峰博装备技术有限公司 | Photoetching machine substrate surface liquid film thermal analysis method |
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2021
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117554410A (en) * | 2024-01-09 | 2024-02-13 | 江苏峰博装备技术有限公司 | Photoetching machine substrate surface liquid film thermal analysis method |
| CN117554410B (en) * | 2024-01-09 | 2024-03-26 | 江苏峰博装备技术有限公司 | Photoetching machine substrate surface liquid film thermal analysis method |
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