CN115682962A - System and method for measuring outline dimension of photomask substrate - Google Patents
System and method for measuring outline dimension of photomask substrate Download PDFInfo
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- CN115682962A CN115682962A CN202211255841.8A CN202211255841A CN115682962A CN 115682962 A CN115682962 A CN 115682962A CN 202211255841 A CN202211255841 A CN 202211255841A CN 115682962 A CN115682962 A CN 115682962A
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Abstract
The invention discloses a system and a method for measuring the outline dimension of a photomask substrate, belonging to the field of manufacturing of photomask substrates of semiconductors and display panels, wherein the system comprises the following steps: the device comprises a sample transfer unit, a sample moving unit and an optical measuring system; a sample transfer unit for transferring the photomask substrate to be inspected between the inspection area and the test area; the sample moving unit is used for adjusting the pitch angle, the rotation angle and the height of the photomask substrate to be measured in cooperation with the optical measurement system; and the optical measurement system is used for measuring the external dimension of the photomask substrate to be measured. The invention provides a photomask substrate outline dimension measuring system and method with high precision, high repeatability, no damage and high cost performance.
Description
Technical Field
The invention belongs to the field of manufacturing of photomask substrates of semiconductors and display panels, and particularly relates to a system and a method for measuring the overall dimension of a photomask substrate.
Background
Photolithography is an important link in semiconductor and display panel manufacturing processes, and photomask blanks used in such processes are generally composed of a quartz substrate and a chromium film, which have high purity, high laser damage threshold, high ultraviolet transmittance, and low thermal expansion coefficient. At present, due to the fact that foreign technical barriers and technical thresholds are high, enterprises begin to research and develop photomask substrates in China, and therefore it is critical that the photomask substrates can be accurately measured.
According to the regulations in the national standard, the external dimensions of the photomask substrate are required to be measured, such as side length, thickness, total thickness variation, vertex angle radius, chamfer straight edge length, marked dimension A (marked straight edge to vertex angle distance) and marked dimension B (marked depth). At present, the sizes can be measured by adopting a contact measurement mode, such as a vernier caliper, a height gauge, a contourgraph and the like, the price is low, the operation is simple, but the precision is poor, and the light-passing surface is easy to damage, so that the photomask substrate is scrapped; the optical image measuring equipment is adopted, so that the cost is low, the reliability is high, but a large measuring error is easy to occur during edge focusing, and the adaptability to a sample is poor; the high-end optical measurement equipment has high precision and good sample adaptability, but the cost is too high and the efficiency is low.
Disclosure of Invention
Aiming at the defects or improvement requirements in the prior art, the invention provides a photomask substrate outline dimension measuring system and method with high precision, high repeatability, no damage and high cost performance.
To achieve the above object, according to one aspect of the present invention, there is provided a photomask substrate dimension measuring system including: the device comprises a sample transfer unit, a sample movement unit and an optical measurement system;
the sample transfer unit is used for transferring the photomask substrate to be tested between the area to be tested and the test area;
the sample moving unit is used for adjusting the pitch angle, the rotation angle and the height of the measured photomask substrate in cooperation with the optical measurement system;
the optical measurement system is used for measuring the external dimension of the photomask substrate to be measured.
In some alternative embodiments, the sample transfer unit comprises: a sample-taking objective table and a grabbing manipulator are sent;
the sampling object stage is positioned in the area to be detected and is used for placing a detected photomask substrate and a detected photomask substrate;
the grabbing manipulator is used for grabbing the tested photomask substrate and moving the tested photomask substrate to a test area, grabbing the tested photomask substrate and turning the tested photomask substrate when the tested photomask substrate needs to be turned over for measurement, grabbing the tested photomask substrate after the measured photomask substrate is measured and transferring the tested photomask substrate to the sample conveying and taking object stage.
In some alternative embodiments, the sample movement unit comprises: a sample claw disc and a sample displacement table;
the grabbing manipulator grabs and moves the tested photomask substrate to the sample claw disc in the test area, and clamps the tested photomask substrate through the sample claw disc after the tested photomask substrate is detected so as to prevent the tested photomask substrate from falling;
the sample displacement platform can drive the sample claw disc to perform pitching, rotating and lifting motions, so that the sample claw disc is matched with the optical measurement system to adjust the measured photomask substrate to a target position.
In some optional embodiments, the optical measurement system comprises: the device comprises a three-axis displacement table, a white light source, a spectrum confocal lens, a photoelectric sensor and a laser confocal measuring head;
the three-axis displacement table is used for driving the white light source, the spectrum confocal lens, the photoelectric sensor and the laser confocal measuring head to move along the horizontal direction and the vertical direction;
the white light source is used for providing a measuring light source to irradiate the measured photomask substrate;
the spectrum confocal lens consists of a light-emitting lens and a light-receiving lens, wherein the light-emitting lens is used for dispersing and converging white light into light beams with different wavelengths so as to enable the focal points of the light beams with different wavelengths in the vertical direction to be different in height, the light focal points corresponding to the wavelengths from short to long are far away from the light-emitting position, and the light beams are reflected by the surface of the photomask substrate to be measured and then are coupled to enter the light-receiving lens;
the photoelectric sensor is used for converting the light coupled by the light receiving lens into an electric signal;
the laser confocal measuring head is used for measuring the thickness of the substrate of the measured photomask.
According to another aspect of the present invention, there is provided a photomask substrate dimension measuring method including:
a sample moving unit for placing the mask substrate to be tested on the sample transfer unit of the area to be tested, and clamping and moving the mask substrate to be tested to the test area by the sample transfer unit;
when measuring the side length, the top angle, the top angle radius and the chamfer straight edge length of a measured photomask blank, controlling an optical measuring system to move to a measuring position, and controlling the pitching, the rotating and the lifting of a sample moving unit to enable the outline dimension of the measured photomask blank to be positioned at the measured position, scanning the front profile of the measured photomask blank by the optical measuring system, acquiring data and then drawing the data into a front profile point cloud image, and calculating and generating the measuring results of the side length, the top angle, the top angle radius and the chamfer straight edge length of the photomask blank according to the coordinates of each sampling point on the front profile point cloud image;
measuring the thickness of the substrate of the measured photomask by an optical measurement system, and calculating the total thickness variation according to the measured thickness;
when the dimension A and the dimension B of the mark of the mask substrate to be measured are measured, the mask substrate to be measured is grabbed from the sample moving unit through the sample transfer unit, turned over by 180 degrees and then placed back to the sample moving unit again, so that the back surface of the mask substrate to be measured is placed in a test area, the mask substrate to be measured is driven by the sample moving unit, after the mask substrate to be measured is inclined to a target angle in cooperation with the optical measurement system, the optical measurement system is controlled to scan the angle contour of the mark and draw an angle contour point cloud image after data acquisition, and a measurement result of the outline dimension of the mask substrate to be measured is generated through calculation according to coordinates of each sampling point on the angle contour point cloud image.
In some optional embodiments, the sample moving unit for moving the mask substrate to be inspected to the test area by clamping the mask substrate to be inspected by the sample transfer unit includes:
placing the tested photomask substrate on a sample sending and taking object stage, and clamping and moving the tested photomask substrate to a sample claw disc of a sample displacement stage of a test area by a grabbing manipulator;
after the presence of the test mask substrate is detected, the test mask substrate is clamped by the sample chuck to prevent the test mask substrate from falling, and the grasping robot is moved away from the test area.
In some alternative embodiments, after the subject photomask substrate is detected and clamped by the sample chuck to prevent the subject photomask substrate from falling, the method further includes:
and calibrating the initial position of each wavelength focus of the spectrum of the optical measurement system under a coordinate system of the triaxial displacement table as an origin coordinate, and calibrating the position coordinate, the pitching angle and the rotation angle of the sample displacement table under the coordinate system of the triaxial displacement table.
In some optional embodiments, when measuring the side length, the top angle, the top angle radius and the chamfer straight edge length of the measured photomask blank, the optical measurement system is controlled to move to a measurement position, and the sample displacement table is controlled to pitch, rotate and lift so that the external dimension of the measured photomask blank is located at the measured position, the optical measurement system scans the front profile of the measured photomask blank and draws a front profile point cloud image after acquiring data, and the measurement results of the side length, the top angle, the top angle radius and the chamfer straight edge length of the photomask blank are generated according to the coordinates of each sampling point on the front profile point cloud image and the calibrated origin coordinates, and the position coordinates, the pitch and the rotation angles of the sample displacement table under the three-axis displacement table coordinate system.
In some alternative embodiments, the thickness of the measured photomask substrate is obtained by performing a point-taking measurement on the measured photomask substrate by a confocal laser measurement head in the optical measurement system, and the total thickness variation is calculated according to the measured thickness.
In some optional embodiments, when measuring the dimension a and the dimension B of the mark of the measured photomask blank, the grabbing robot grabs the measured photomask blank from the sample claw disc, turns over the measured photomask blank by 180 ° and places the substrate back on the sample claw disc again, so that the back of the measured photomask blank is placed in the test area, the sample displacement table drives the measured photomask blank, the optical measurement system is controlled to scan the mark angle profile and collect data to draw a mark angle profile point cloud image after being tilted to a target angle in cooperation with the optical measurement system, and the measurement results of the dimension a and the dimension B of the mark of the measured photomask blank are generated according to the coordinates of each sampling point on the mark angle profile point cloud image and the calibrated origin coordinates and the position coordinates, pitching and rotation angles of the sample displacement table in the coordinate system of the three-axis displacement table.
In general, compared with the prior art, the above technical solutions conceived by the present invention can achieve the following beneficial effects:
(1) The measurement of the outline dimension of the photomask substrate with high precision, high repeatability, no damage and high cost performance can be realized through the sample transfer unit, the sample movement unit and the optical measurement system.
(2) The optical plane measuring system comprises a white light source, a spectrum confocal lens and a photoelectric sensor, the laser confocal measuring head for height measurement forms the optical measuring system, the sample displacement platform is provided with a sample claw disc and can perform pitching, rotating and lifting motions, and the optical plane measuring system has the advantages of high precision, high repeatability and high cost performance.
(3) The sample claw disk provided with the sensor can clamp the sample to prevent falling after detecting the sample, and cannot damage the sample.
Drawings
FIG. 1 is a schematic diagram of a system for measuring dimensions of a photomask substrate according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a method for measuring the outline dimension of a photomask blank according to an embodiment of the present invention;
wherein, 1-sending a sampling objective table; 2-a grabbing manipulator; 3-sample claw disk; 4-a sample displacement stage; 5-a three-axis displacement stage; 6-white light source; 7-spectral confocal lens; 8-a photosensor; 9-laser confocal probe; 10-photomask substrate.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The technical scheme adopted by the invention is as follows: a photomask substrate contour dimension measuring system comprises a sample transfer unit, a sample movement unit, an optical measuring system and a measuring head, wherein the sample transfer unit is composed of a sample sending and taking object stage 1 and a grabbing manipulator 2, the sample movement unit is composed of a sample claw disc 3 and a sample displacement table 4, and the optical measuring system is composed of a triaxial displacement table 5, a white light source 6, a spectrum confocal lens 7, a photoelectric sensor 8 and a laser confocal measuring head 9. Placing the tested photomask substrate on a sample sending and taking object stage 1, and clamping the tested photomask substrate by a grabbing manipulator 2 to move the tested photomask substrate to a sample claw disc 3 of a sample displacement stage 4 of a test area; the sample displacement table 4 can perform pitching, rotating and lifting movements, and a sensor on the sample claw disc 3 clamps the tested photomask substrate to prevent the tested photomask substrate from falling after detecting the tested photomask substrate; an optical plane measuring system consisting of a white light source 6, a spectrum confocal lens 7 and a photoelectric sensor 8 and a laser confocal measuring head 9 for height measurement are arranged on the three-axis displacement table 5, and the two systems form an optical measuring system which can move along the horizontal direction and the vertical direction. When measuring the side length, the vertex angle radius and the chamfer straight edge length of the photomask substrate, controlling an optical measuring system through measuring software, scanning the front profile of the photomask substrate to be measured, collecting data and then drawing the data into a point cloud image; the thickness of the measured photomask substrate is measured by a laser confocal measuring head 9 in an optical measuring system, and the total thickness variation is calculated according to the measured thickness; when measuring the size A and the size B of a mark of a photomask substrate to be measured, the grabbing manipulator 2 grabs the photomask substrate from the sample claw disc 3, turns the photomask substrate for 180 degrees and then puts the photomask substrate back on the sample claw disc 3 again, so that the back of the photomask substrate to be measured is placed in a test area, the sample displacement table 4 drives the photomask substrate to be measured, and after the photomask substrate to be measured is inclined to a target angle in cooperation with the optical measurement system, the optical measurement system is controlled by measurement software to scan the angle profile of the mark and collect data, and then the data are drawn into a point cloud image; and finally, calculating by software according to the coordinates of each sampling point on the point cloud image to generate a measurement result of the outline dimension of the measured photomask substrate.
Examples
FIG. 1 is a schematic diagram of a system for measuring the dimension of a photomask substrate, including a sample transfer unit, a sample moving unit and an optical measuring system;
a sample transfer unit for transferring the photomask substrate to be tested between the inspection area and the test area;
the sample moving unit is used for adjusting the pitch angle, the rotation angle and the height of the photomask substrate to be measured in cooperation with the optical measurement system;
and the optical measurement system is used for measuring the external dimension of the photomask substrate to be measured.
In the embodiment of the present invention, the sample transfer unit mainly includes a sample feeding stage 1 and a grasping robot 2. The sample feeding and taking stage 1 is located in a region to be inspected and used for placing a detected photomask substrate and an inspected photomask substrate, so that an operator can conveniently take and place samples. The grabbing manipulator 2 is used for grabbing and moving the tested photomask substrate to the sample claw disc 3 of the test area, and grabbing and overturning the tested photomask substrate when the tested photomask substrate needs to be overturned for measurement; when the measurement of the photomask substrate is completed, the photomask substrate is grasped and transferred to the sample transfer stage 1.
In the present embodiment, the sample moving unit mainly includes a sample claw disk 3 and a sample displacement stage 4. The sensor on the sample claw disk 3 detects the existence of the photomask substrate to be measured and clamps the photomask substrate to prevent the photomask substrate from falling. The sample displacement stage 4 can perform pitching, rotating, and lifting movements, and adjusts the photomask blank to a correct target position in cooperation with the optical measurement system.
In the embodiment of the present invention, the optical measurement system mainly includes a three-axis displacement table 5, a white light source 6, a spectrum confocal lens 7, a photoelectric sensor 8, and a laser confocal measurement head 9, and the functions of each part are as follows:
the three-axis displacement table 5 is used for driving the white light source 6, the spectrum confocal lens 7, the photoelectric sensor 8 and the laser confocal measuring head 9 to move along the horizontal and vertical directions;
the white light source 6 is used for providing a measuring light source to irradiate the measured sample 10, and the wavelength range of the white light source is a visible light spectrum, namely 380 nm-780 nm;
the spectrum confocal lens 7 consists of a light-emitting lens and a light-receiving lens, the light-emitting lens is used for dispersing and converging white light into light beams with different wavelengths, the heights of the focuses of the light with different wavelengths in the vertical direction are different, the focus of the light with short wavelength is far away from the light-emitting position, the focus of the light with long wavelength is close to the light-emitting position, and the light beams are coupled into the light-receiving lens after being reflected by the surface of the photomask substrate 10 to be measured;
in the embodiment of the present invention, the short wavelength refers to a wavelength of 380nm, and the long wavelength refers to a wavelength of 780nm, that is, the wavelength is from short to long corresponding to the distance from the light-emitting position to the light-emitting position from far to near.
A photoelectric sensor 8 for converting the light coupled by the light receiving lens into an electrical signal;
and the laser confocal measuring head 9 is used for measuring the thickness of the measured photomask substrate.
The method for measuring the outline dimension of the photomask substrate provided by the embodiment of the invention controls the three-axis displacement table to drive the optical measurement system through measurement software, scans the outline of the outline dimension of the photomask substrate to be measured, takes points, collects data and then draws the data into a point cloud image, and calculates the outline dimension of the photomask substrate according to the coordinate relation of each point on the point cloud image. As shown in fig. 2, the method for measuring the outer dimension of the photomask substrate using the system includes:
placing a tested photomask substrate 10 on a sample sending and taking object stage 1, and clamping and moving the tested photomask substrate to a sample claw disc 3 of a sample displacement stage 4 in a testing area by a grabbing manipulator 2;
after a sensor on the sample claw disc 3 detects that a tested photomask substrate exists, the tested photomask substrate is clamped to prevent the tested photomask substrate from falling off, the grabbing manipulator 2 is moved away from the test area, and the optical measurement system is ready to start measurement;
calibrating the initial position of each wavelength focus of the optical measurement system spectrum under a coordinate system of a triaxial displacement table as an origin coordinate, and calibrating the position coordinate, the pitching angle and the rotation angle of a sample displacement table 4 under the coordinate system of the triaxial displacement table;
controlling an optical measurement system to move to a measurement position through measurement software, and controlling a sample displacement table 4 to pitch, rotate and lift so that the external dimension to be measured is located at the measured position, scanning the front profile of a measured photomask substrate 10 by the optical measurement system, acquiring data and then drawing the data into a front profile point cloud image, and calculating by the software according to coordinates of each sampling point on the front profile point cloud image to generate measurement results of the side length, the top angle, the top angle radius and the chamfer straight edge length of the measured photomask substrate;
the thickness of the measured photomask substrate 10 is obtained by taking point measurement by a laser confocal measuring head 9 in an optical measurement system, and the total thickness variation is calculated according to the measured thickness;
when measuring the marked dimension A and dimension B of the tested photomask blank 10, the grabbing manipulator 2 grabs the tested photomask blank 10 from the sample claw disc 3, turns the substrate for 180 degrees and then puts the substrate for 180 degrees back on the sample claw disc 3, so that the back of the tested photomask blank 10 is placed in a test area, the sample displacement table 4 drives the tested photomask blank 10, and after the substrate for 10 is matched with the optical measurement system and inclines to a specific target angle, the optical measurement system is controlled by measurement software to scan the marked angle profile and collect data, and then the marked angle profile point cloud image is drawn; the software will calculate and generate the measurement results of the dimension a and the dimension B of the mark of the photomask substrate 10 to be measured according to the coordinates of each sampling point on the mark angle profile point cloud image.
It should be noted that, according to the implementation requirement, each step/component described in the present application can be divided into more steps/components, and two or more steps/components or partial operations of the steps/components can be combined into new steps/components to achieve the purpose of the present invention.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A photomask substrate dimension measuring system, comprising: the device comprises a sample transfer unit, a sample movement unit and an optical measurement system;
the sample transfer unit is used for transferring the photomask substrate to be tested between the area to be tested and the test area;
the sample moving unit is used for adjusting the pitch angle, the rotation angle and the height of the measured photomask substrate in cooperation with the optical measurement system;
the optical measurement system is used for measuring the external dimension of the photomask substrate to be measured.
2. The system of claim 1, wherein the sample transfer unit comprises: a sample-taking objective table and a grabbing manipulator are sent;
the sampling object stage is positioned in the area to be detected and is used for placing a detected photomask substrate and a detected photomask substrate;
the grabbing manipulator is used for grabbing the tested photomask substrate and moving the tested photomask substrate to a test area, grabbing the tested photomask substrate and turning the tested photomask substrate when the tested photomask substrate needs to be turned over for measurement, grabbing the tested photomask substrate after the measured photomask substrate is measured and transferring the tested photomask substrate to the sample conveying and taking object stage.
3. The system of claim 2, wherein the sample movement unit comprises: a sample claw disc and a sample displacement table;
the grabbing mechanical arm grabs and moves the tested photomask substrate to the sample claw disc in the testing area, and clamps the tested photomask substrate through the sample claw disc after the tested photomask substrate is detected so as to prevent the tested photomask substrate from falling;
the sample displacement platform can drive the sample claw disc to perform pitching, rotating and lifting motions, so that the sample claw disc is matched with the optical measurement system to adjust the measured photomask substrate to a target position.
4. The system of claim 3, wherein the optical measurement system comprises: the device comprises a three-axis displacement table, a white light source, a spectrum confocal lens, a photoelectric sensor and a laser confocal measuring head;
the three-axis displacement table is used for driving the white light source, the spectrum confocal lens, the photoelectric sensor and the laser confocal measuring head to move along the horizontal direction and the vertical direction;
the white light source is used for providing a measuring light source to irradiate the measured photomask substrate;
the spectrum confocal lens consists of a light-emitting lens and a light-receiving lens, wherein the light-emitting lens is used for dispersing and converging white light into light beams with different wavelengths so as to enable the focal heights of the light beams with different wavelengths in the vertical direction to be different, the light focal points corresponding to the wavelengths from short to long are far away from the light-emitting position, and the light beams are reflected by the surface of the photomask substrate to be measured and then coupled into the light-receiving lens;
the photoelectric sensor is used for converting the light coupled by the light receiving lens into an electric signal;
the laser confocal measuring head is used for measuring the thickness of the substrate of the measured photomask.
5. A method for measuring the outline dimension of a photomask substrate, comprising:
a sample moving unit for placing the mask substrate to be tested on the sample transfer unit of the area to be tested, and clamping and moving the mask substrate to be tested to the test area by the sample transfer unit;
when measuring the side length, the top angle, the top angle radius and the chamfer straight edge length of a measured photomask blank, controlling an optical measuring system to move to a measuring position, and controlling the pitching, the rotating and the lifting of a sample moving unit to enable the outline dimension of the measured photomask blank to be positioned at the measured position, scanning the front profile of the measured photomask blank by the optical measuring system, acquiring data and then drawing the data into a front profile point cloud image, and calculating and generating the measuring results of the side length, the top angle, the top angle radius and the chamfer straight edge length of the photomask blank according to the coordinates of each sampling point on the front profile point cloud image;
measuring the thickness of the substrate of the measured photomask by an optical measurement system, and calculating the total thickness variation according to the measured thickness;
when the dimension A and the dimension B of the mark of the mask substrate to be measured are measured, the mask substrate to be measured is grabbed from the sample moving unit through the sample transfer unit, turned over by 180 degrees and then placed back to the sample moving unit again, so that the back surface of the mask substrate to be measured is placed in a test area, the mask substrate to be measured is driven by the sample moving unit, after the mask substrate to be measured is inclined to a target angle in cooperation with the optical measurement system, the optical measurement system is controlled to scan the angle contour of the mark and draw an angle contour point cloud image after data acquisition, and a measurement result of the outline dimension of the mask substrate to be measured is generated through calculation according to coordinates of each sampling point on the angle contour point cloud image.
6. The method according to claim 5, wherein the placing the photomask substrate to be tested on the sample transfer unit of the inspection area, the sample moving unit moving the photomask substrate to be tested to the test area by being clamped by the sample transfer unit, comprises:
placing the tested photomask substrate on a sample sending and taking object stage, and clamping and moving the tested photomask substrate to a sample claw disc of a sample displacement stage of a test area by a grabbing manipulator;
after the presence of the test mask substrate is detected, the test mask substrate is clamped by the sample chuck to prevent the test mask substrate from falling, and the grasping robot is moved away from the test area.
7. The method of claim 6, wherein after the test mask substrate is detected and then clamped by the sample chuck to prevent the test mask substrate from falling, the method further comprises:
and calibrating the initial position of each wavelength focus of the spectrum of the optical measurement system under a coordinate system of the triaxial displacement table as an origin coordinate, and calibrating the position coordinate, the pitching angle and the rotation angle of the sample displacement table under the coordinate system of the triaxial displacement table.
8. The method as claimed in claim 7, wherein when measuring the side length, the top angle, the top angle radius and the chamfer straight edge length of the photomask blank to be measured, the optical measurement system is controlled to move to the measurement position, and the sample displacement table is controlled to pitch, rotate and lift to enable the external dimension of the photomask blank to be measured to be located at the measured position, the optical measurement system scans the front profile of the photomask blank to be measured, collects data and then draws a front profile point cloud image, and the measurement results of the side length, the top angle, the top angle radius and the chamfer straight edge length of the photomask blank are generated according to the coordinates of each sampling point on the front profile point cloud image and the calibrated origin coordinates, the position coordinates, the pitch and the rotation angles of the sample displacement table under the coordinate system of the three-axis displacement table.
9. The method as claimed in claim 8, wherein the thickness of the photomask substrate to be measured is obtained by performing a point measurement on the photomask substrate to be measured by a confocal laser measurement head in the optical measurement system, and the total thickness variation is calculated according to the measured thickness.
10. The method as claimed in claim 9, wherein when measuring the dimension a and the dimension B of the mark of the photomask blank, the grabbing robot grabs the photomask blank to be measured from the sample pallet and turns it 180 ° and then puts it back on the sample pallet, so that the back of the photomask blank to be measured is placed in the test area, the sample displacement stage drives the photomask blank to be measured, and after the optical measurement system is tilted to the target angle, the optical measurement system is controlled to scan the mark angle profile and collect data to draw a mark angle profile point cloud image, and the measurement results of the dimension a and the dimension B of the mark of the photomask blank to be measured are calculated according to the coordinates of each sampling point on the mark angle profile point cloud image and the calibrated origin coordinates, the position coordinates, the pitch and the rotation angle of the sample displacement stage under the coordinate system of the three-axis displacement stage.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117761013A (en) * | 2023-12-14 | 2024-03-26 | 浙江大学 | Device and method for detecting surface quality angle resolution of optical element |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117761013A (en) * | 2023-12-14 | 2024-03-26 | 浙江大学 | Device and method for detecting surface quality angle resolution of optical element |
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