CN115677366A - Carbon nanosheet toughened PyC/SiC composite interface and preparation method thereof - Google Patents

Carbon nanosheet toughened PyC/SiC composite interface and preparation method thereof Download PDF

Info

Publication number
CN115677366A
CN115677366A CN202211366219.4A CN202211366219A CN115677366A CN 115677366 A CN115677366 A CN 115677366A CN 202211366219 A CN202211366219 A CN 202211366219A CN 115677366 A CN115677366 A CN 115677366A
Authority
CN
China
Prior art keywords
interface
sic
deposition
pyc
cns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211366219.4A
Other languages
Chinese (zh)
Inventor
刘雪松
张佳平
李�浩
常龙飞
罗天祎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AECC Shenyang Liming Aero Engine Co Ltd
Original Assignee
AECC Shenyang Liming Aero Engine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AECC Shenyang Liming Aero Engine Co Ltd filed Critical AECC Shenyang Liming Aero Engine Co Ltd
Priority to CN202211366219.4A priority Critical patent/CN115677366A/en
Publication of CN115677366A publication Critical patent/CN115677366A/en
Pending legal-status Critical Current

Links

Images

Abstract

The present invention relates to SiC f The method comprises the steps of sequentially depositing a PyC interface, a CNS (central nervous system) interface and a SiC interface on the surface of a fiber preform by a chemical vapor deposition process, making up the defects of a single PyC weak interface and a single SiC strong interface, enhancing the combination of the SiC interface and the PyC interface by utilizing the pinning effect of the CNS, improving the brittleness of the SiC interface, and improving the SiC by interface modification f The strength and toughness of the/SiC composite material effectively avoid the brittle fracture of the ceramic composite material, so that the safety and reliability of the ceramic composite material part are improved, and the service life of the part is prolonged by 30 percent.

Description

Carbon nanosheet toughened PyC/SiC composite interface and preparation method thereof
Technical Field
The present invention relates to SiC f a/SiC composite material, in particular to a carbon nano sheet toughened PyC/SiC composite interface and a preparation method thereof.
Background
SiC f/ SiC composite materialThe material is a complex phase material which is formed by introducing SiC continuous fibers into a SiC ceramic matrix and taking the SiC fibers as a dispersed reinforcing phase and the SiC ceramic as a continuous phase. The ceramic composite material has lower density (only 1/4~1/3 of high-temperature alloy), excellent high-temperature performance (the higher-temperature alloy is improved by 200 ℃), specific strength and specific modulus, oxidation resistance and the like, and has wide application prospect in the field of aerospace.
The direct contact of the ceramic fiber and the matrix can form strong fiber-matrix combination, so that the reinforcing and toughening effects of the fiber cannot be exerted, and meanwhile, the preparation process can cause severe damage to the fiber. The introduction of the interface layer between the fiber and the matrix is an effective means for solving the problem of fiber-matrix combination and avoiding fiber damage, and is particularly critical for adjusting the comprehensive performance of the ceramic composite material, so the design and preparation process of the interface layer are very important.
SiC at present f The interface material of the/SiC composite material mainly comprises pyrolytic carbon (PyC), boron Nitride (BN), silicon carbide (SiC) and a multilayer composite interface. The special layered crystal structure is beneficial to toughening the ceramic composite material, so that PyC becomes a common interface phase of the ceramic composite material, but the characteristic of easy oxidation limits the application of the composite material in the service environment of a hot end part of an aircraft engine. Compared with the prior art, siC has better oxidation resistance, but has large brittleness and poor high-temperature performance, and cannot meet the bearing requirement of a hot end part of an engine. Considering that the fracture failure behavior of the ceramic composite material is directly influenced by the interface composition and the interface property, the invention provides a Carbon Nanosheet (CNS) -modified PyC/SiC composite interface layer, the damage tolerance and the thermophysical property of the ceramic composite material are improved by the PyC interface, the oxidation resistance of the ceramic composite material is improved by the SiC interface, and meanwhile, the brittleness of the SiC interface layer is improved by utilizing the induced deflection of the CNS to an interface crack, the bridging and the debonding of the CNS.
Disclosure of Invention
For the above SiC f The invention discloses a PyC/SiC composite interface toughened by carbon nano sheets and a preparation method thereof, and relates to the problem of material selection of a/SiC composite interface.
The technical scheme of the invention is as follows:
carbon Nanosheet (CNS) -toughened PyC/SThe preparation method of the iC composite interface comprises the steps of sequentially depositing a PyC interface, a CNS (central nervous system) and a SiC interface on the surface of a fiber preform by a chemical vapor deposition process, making up the defects of a single PyC weak interface and a single SiC strong interface, enhancing the combination of the SiC interface and the PyC interface by utilizing the pinning effect of the CNS, and improving the brittleness of the SiC interface, so that the SiC is improved by interface modification f Strength and toughness of the/SiC composite material.
Further, the preparation method of the Carbon Nanosheet (CNS) -toughened PyC/SiC composite interface comprises the following specific steps:
step 1) weaving of fiber preform
Adopts second-generation SiC fiber and 2.5D weaving structure, the density of warp yarn is 8 plus or minus 0.2 pieces/cm, the density of weft yarn is 3.5 plus or minus 0.2 pieces/cm, and the size of the weaving body is 200 multiplied by 100 multiplied by 3.5mm 3
Step 2) PyC interfacial deposition
Depositing a PyC interface layer on the surface of the fiber by adopting a chemical vapor deposition process, placing the fiber preform in a PyC deposition furnace, and performing chemical vapor deposition with propylene 3 H 6 As a carbon source, high-purity argon Ar is used as a diluting and protecting gas, and the deposition parameters are as follows: c 3 H 6 The flow rate is 100 to 200mL/min, the Ar flow rate is 120 to 200mL/min, the deposition temperature is 800 to 1500 ℃, the heating rate is 8 ℃ per min, the deposition pressure is 1 to 2kPa, the deposition time is 1 to 3h, and the thickness of the obtained PyC interface layer is 200 to 300nm;
step 3) CNS deposition
Depositing CNS by chemical vapor deposition, heating methanol in water bath by taking methanol as a precursor, and keeping the temperature of the water bath at 20-30 ℃; regulating the flow of methanol to keep the pressure in a deposition chamber at 10 to 20kPa; the deposition temperature is 1000 to 1300 ℃, and the deposition time is 1 to 3h;
step 4) SiC interface deposition
Depositing SiC interface layer by chemical vapor deposition process, taking Methyl Trichlorosilane (MTS) as precursor, and obtaining high-purity H 2 As carrier gas, high-purity Ar as diluent gas, deposition parameters are as follows: h 2 The flow rate is 1.5 to 3L/min, the Ar flow rate is 300 to 800mL/min, the deposition temperature is 900 to 1500 ℃, the heating rate is 7 ℃ per min, the deposition pressure is 0.5 to 3kPa, the deposition time is 2 to 10h, and the obtained SiC interface layerThe thickness is 0.5 to 1 mu m;
step 5) SiC matrix deposition
Adopts chemical vapor deposition process to realize SiC matrix densification, uses methyl trichlorosilane MTS as a precursor, and has high purity H 2 As carrier gas, high-purity Ar as diluent gas, deposition parameters are as follows: h 2 The flow rate is 1.5 to 3L/min, the Ar flow rate is 200 to 600mL/min, the deposition temperature is 900 to 1500 ℃, the heating rate is 7 ℃ per min, the deposition pressure is 1 to 3kPa, the deposition time is 100 to 200h, and the obtained SiC f The density of the/SiC composite material is 1.9 to 2.1g/cm 2
The carbon nanosheet toughened PyC/SiC composite interface prepared by the preparation method is provided.
The invention has the advantages and beneficial effects that:
compared with the existing PyC/SiC composite interface, the carbon nanosheet toughened PyC/SiC composite interface provided by the invention has the advantages that the interlayer combination of the PyC interface and the SiC interface is strengthened by introducing the nanocarbon, the crack propagation resistance is increased, the bridging and debonding effects of the nanophase are exerted, the interface brittleness is obviously improved, and the SiC is further improved f The strength and the toughness of the/SiC composite material effectively avoid the brittle fracture of the ceramic composite material, so that the safety and the reliability of the ceramic composite material part are improved, and the service life of the part is prolonged by 30 percent.
Drawings
FIG. 1 is a surface CNS topography of a PyC interface layer according to the invention;
FIG. 2 shows SiC prepared by the present invention f Bending strength-displacement curve diagram of the/SiC composite material.
Detailed Description
The invention is described in further detail below with reference to the drawings and the detailed description.
A carbon nanosheet toughened PyC/SiC composite interface is prepared according to the following steps:
step 1) weaving of fiber preform
Adopts second-generation SiC fiber and 2.5D weaving structure, the density of warp yarn is 8 plus or minus 0.2 pieces/cm, the density of weft yarn is 3.5 plus or minus 0.2 pieces/cm, and the size of the weaving body is 200 multiplied by 100 multiplied by 3.5mm 3
Step 2) PyC interfacial deposition
Depositing a PyC interface layer on the surface of the fiber by adopting a chemical vapor deposition process, placing the fiber preform in a PyC deposition furnace, and performing chemical vapor deposition on the fiber preform by using propylene 3 H 6 As a carbon source, high-purity argon Ar is used as a diluting and protecting gas, and the deposition parameters are as follows: c 3 H 6 The flow rate is 120mL/min, the Ar flow rate is 120mL/min, the deposition temperature is 1050 ℃, the heating rate is 8 ℃ per min, the deposition pressure is 1.2kPa, the deposition time is 1h, and the thickness of the obtained PyC interface layer is 200nm;
step 3) CNS deposition
Depositing CNS by chemical vapor deposition, heating methanol in water bath at 28 deg.C by using methanol as precursor; regulating the flow of the methanol to keep the pressure in the deposition chamber at 10kPa; the deposition temperature is 1200 ℃, and the deposition time is 1.5h;
step 4) SiC interface deposition
Depositing SiC interface layer by chemical vapor deposition process, taking Methyl Trichlorosilane (MTS) as precursor, and obtaining high-purity H 2 As carrier gas, high-purity Ar as diluent gas, deposition parameters are as follows: h 2 The flow rate is 1.8L/min, the Ar flow rate is 400mL/min, the deposition temperature is 980 ℃, the heating rate is 7 ℃/min, the deposition pressure is 1.2kPa, the deposition time is 4h, and the thickness of the obtained SiC interface layer is 0.8 mu m;
step 5) SiC matrix deposition
Adopts chemical vapor deposition process to realize SiC matrix densification, uses methyl trichlorosilane MTS as a precursor, and has high purity H 2 As carrier gas, high-purity Ar as diluent gas, deposition parameters are as follows: h 2 The flow rate is 2.4L/min, the Ar flow rate is 600mL/min, the deposition temperature is 980 ℃, the heating rate is 7 ℃ per min, the deposition pressure is 1-3kPa, the deposition time is 180 hours, and the obtained SiC f The density of the/SiC composite material is 2.0g/cm 2
As shown in fig. 1, the surface CNS topography of the PyC interface layer of the present invention shows the presence of a large number of nanophase on the PyC layer.
The bending properties of the SiCf/SiC composites were tested using a universal tester (CMT 5304-30 kN). The test parameters are: the sample size was 40X 5X 3mm 3 AcrossThe distance is 30mm, the loading direction is vertical to the in-plane direction of the fiber, and the loading speed is 0.5mm/min. The bending strength-displacement curve is shown in FIG. 2, and when no CNS is introduced at the interface, the bending strength of the composite material is 335MPa; after the CNS modified composite interface is introduced, the bending strength of the composite material is 352MPa. In addition, the fracture toughness of the composite material is improved after the CNS is introduced, and the pseudoplastic characteristic of the corresponding curve is more obvious. This indicates the introduction of CNS to SiC at the composite interface f the/SiC composite material has double functions of strengthening and toughening.

Claims (3)

1. A preparation method of a carbon nanosheet toughened PyC/SiC composite interface is characterized in that a PyC interface, a CNS (central nervous system) interface and a SiC interface are sequentially deposited on the surface of a fiber preform through a chemical vapor deposition process, the defects of a single PyC weak interface and a single SiC strong interface are overcome, the combination of the SiC interface and the PyC interface is enhanced by utilizing the pinning effect of the CNS, the brittleness of the SiC interface is improved, and therefore the interface modification is used for improving the brittleness of the SiC interface f Strength and toughness of the/SiC composite material.
2. The method for preparing the carbon nanosheet-toughened PyC/SiC composite interface according to claim 1, comprising the following specific steps:
step 1) weaving of fiber preform
Adopts second-generation SiC fiber and 2.5D weaving structure, the density of warp yarn is 8 plus or minus 0.2 pieces/cm, the density of weft yarn is 3.5 plus or minus 0.2 pieces/cm, and the size of the weaving body is 200 multiplied by 100 multiplied by 3.5mm 3
Step 2) PyC interfacial deposition
Depositing a PyC interface layer on the surface of the fiber by adopting a chemical vapor deposition process, placing the fiber preform in a PyC deposition furnace, and performing chemical vapor deposition on the fiber preform by using propylene 3 H 6 As a carbon source, high-purity argon Ar is used as a diluting and protecting gas, and the deposition parameters are as follows: c 3 H 6 The flow rate is 100 to 200mL/min, the Ar flow rate is 120 to 200mL/min, the deposition temperature is 800 to 1500 ℃, the heating rate is 8 ℃ per min, the deposition pressure is 1 to 2kPa, the deposition time is 1 to 3h, and the thickness of the obtained PyC interface layer is 200 to 300nm;
step 3) CNS deposition
Depositing CNS by chemical vapor deposition, heating methanol in water bath by taking methanol as a precursor, and keeping the temperature of the water bath at 20-30 ℃; regulating the flow of the methanol to keep the pressure in the deposition chamber within 10 to 20kPa; the deposition temperature is 1000 to 1300 ℃, and the deposition time is 1 to 3h;
step 4) SiC interface deposition
Depositing SiC interface layer by chemical vapor deposition process, taking Methyl Trichlorosilane (MTS) as precursor, and obtaining high-purity H 2 As carrier gas, high-purity Ar as diluent gas, and the deposition parameters are as follows: h 2 The flow rate is 1.5 to 3L/min, the Ar flow rate is 300 to 800mL/min, the deposition temperature is 900 to 1500 ℃, the heating rate is 7 ℃ per min, the deposition pressure is 0.5 to 3kPa, the deposition time is 2 to 10h, and the thickness of the obtained SiC interface layer is 0.5 to 1 mu m;
step 5) SiC matrix deposition
Adopts chemical vapor deposition process to realize SiC matrix densification, uses methyl trichlorosilane MTS as a precursor, and has high purity H 2 As carrier gas, high-purity Ar as diluent gas, deposition parameters are as follows: h 2 The flow rate is 1.5 to 3L/min, the Ar flow rate is 200 to 600mL/min, the deposition temperature is 900 to 1500 ℃, the heating rate is 7 ℃ per min, the deposition pressure is 1 to 3kPa, the deposition time is 100 to 200h, and the obtained SiC f The density of the/SiC composite material is 1.9 to 2.1g/cm 2
3. A carbon nanoplate toughened PyC/SiC composite interface prepared by the method of preparing a carbon nanoplate toughened PyC/SiC composite interface of claim 2.
CN202211366219.4A 2022-11-03 2022-11-03 Carbon nanosheet toughened PyC/SiC composite interface and preparation method thereof Pending CN115677366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211366219.4A CN115677366A (en) 2022-11-03 2022-11-03 Carbon nanosheet toughened PyC/SiC composite interface and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211366219.4A CN115677366A (en) 2022-11-03 2022-11-03 Carbon nanosheet toughened PyC/SiC composite interface and preparation method thereof

Publications (1)

Publication Number Publication Date
CN115677366A true CN115677366A (en) 2023-02-03

Family

ID=85048010

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211366219.4A Pending CN115677366A (en) 2022-11-03 2022-11-03 Carbon nanosheet toughened PyC/SiC composite interface and preparation method thereof

Country Status (1)

Country Link
CN (1) CN115677366A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116283324A (en) * 2023-02-13 2023-06-23 杭州英希捷科技有限责任公司 Method for improving carbon fiber ceramic interface, preparation method and application

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106948169A (en) * 2017-03-16 2017-07-14 西北工业大学 A kind of preparation method of graphene doping pyrolytic carbon
US20180250704A1 (en) * 2015-09-08 2018-09-06 Grafoid Inc. Process for Coating a Substrate with a Carbon-Based Material
CN109811327A (en) * 2019-01-22 2019-05-28 陕西科技大学 A kind of nano-interface layer/carbon nanotube-C/C composite material and preparation method
CN113024281A (en) * 2021-02-28 2021-06-25 西北工业大学 Silicon carbide/graphene bionic laminated coating and preparation method thereof
CN114315395A (en) * 2021-10-20 2022-04-12 中国航发沈阳黎明航空发动机有限责任公司 SiCfSiC nanowire toughened PyC/SiC composite interface of/SiC composite material and preparation method thereof
CN114368982A (en) * 2022-01-21 2022-04-19 巩义市泛锐熠辉复合材料有限公司 Silicon carbide coating graphite base and preparation method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180250704A1 (en) * 2015-09-08 2018-09-06 Grafoid Inc. Process for Coating a Substrate with a Carbon-Based Material
CN106948169A (en) * 2017-03-16 2017-07-14 西北工业大学 A kind of preparation method of graphene doping pyrolytic carbon
CN109811327A (en) * 2019-01-22 2019-05-28 陕西科技大学 A kind of nano-interface layer/carbon nanotube-C/C composite material and preparation method
CN113024281A (en) * 2021-02-28 2021-06-25 西北工业大学 Silicon carbide/graphene bionic laminated coating and preparation method thereof
CN114315395A (en) * 2021-10-20 2022-04-12 中国航发沈阳黎明航空发动机有限责任公司 SiCfSiC nanowire toughened PyC/SiC composite interface of/SiC composite material and preparation method thereof
CN114368982A (en) * 2022-01-21 2022-04-19 巩义市泛锐熠辉复合材料有限公司 Silicon carbide coating graphite base and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116283324A (en) * 2023-02-13 2023-06-23 杭州英希捷科技有限责任公司 Method for improving carbon fiber ceramic interface, preparation method and application
CN116283324B (en) * 2023-02-13 2024-04-12 杭州英希捷科技有限责任公司 Method for improving carbon fiber ceramic interface, preparation method and application

Similar Documents

Publication Publication Date Title
CN100588844C (en) Ceramic base compound material bolt preparation method
Yang et al. Mechanical properties of SiCf/SiC composites with PyC and the BN interface
CN108395279B (en) Method for preparing HfC-SiC complex phase gradient coating by chemical vapor codeposition method
CN101033137A (en) Method of preparing carbon/carbon-silicon carbide ceramics base composite material
Liang et al. Ablation behavior and mechanism of SiCf/Cf/SiBCN ceramic composites with improved thermal shock resistance under oxyacetylene combustion flow
Fu et al. Carbon nanotube-toughened interlocking buffer layer to improve the adhesion strength and thermal shock resistance of SiC coating for C/C–ZrC–SiC composites
CN108947588B (en) C/SiC composite material, antioxidant coating used for same and preparation method thereof
CN115677366A (en) Carbon nanosheet toughened PyC/SiC composite interface and preparation method thereof
CN104086203A (en) Preparation method of crystal whisker/fiber synergic reinforced ceramic-base composite material
CN114315395A (en) SiCfSiC nanowire toughened PyC/SiC composite interface of/SiC composite material and preparation method thereof
CN113354435A (en) SiC fibre reinforcement and toughening (SiC-BN)mMulti-element multi-layer self-healing ceramic matrix composite and preparation method thereof
CN109811327B (en) Nano interface layer/carbon nano tube-C/C composite material and preparation method thereof
CN113480320B (en) High-stress-cracking-resistance SiC f SiC ceramic matrix composite material and preparation method thereof
Feng et al. Effect of SiCnws on flexural strength of SiCf/HfC-SiC composites after impact and ablation
CN112851387B (en) Method for preparing silicon carbide coating on surface of carbon-carbon composite material
Zhang et al. Ablation-resistant Ta0. 78Hf0. 22C solid solution ceramic modified C/C composites for oxidizing environments over 2200° C
Cheng et al. Oxidation Behavior from Room Temperature to 1500° C of 3D‐C/SiC Composites with Different Coatings
Ren et al. Improving the flexural property and long-lasting anti-ablation performance of the CVD-HfC coating by in-situ growing HfC nanowires
CN114105662B (en) Multilayer interface coating, preparation method and ceramic matrix composite preparation method
Xu et al. Influences of the dip-coated BN interface on mechanical behavior of PIP-SiC/SiC minicomposites
Zhu et al. Research and application prospect of short carbon fiber reinforced ceramic composites
Ren et al. Preparation of MoSi2-modified HfB2-SiC ultra high temperature ceramic anti-oxidation coatings by liquid phase sintering
Liu et al. Research progress on tantalum carbide coatings oncarbon materials
CN111172519A (en) Device and method for continuously preparing composite interface layer on surface of silicon carbide fiber
CN114988884B (en) Fine control method for alternately deposited multilayer pyrolytic carbon interface phase

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination