CN115657338B - Optical memory based on photonic crystal nano beam modulated by phase change material - Google Patents
Optical memory based on photonic crystal nano beam modulated by phase change material Download PDFInfo
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- CN115657338B CN115657338B CN202211328980.9A CN202211328980A CN115657338B CN 115657338 B CN115657338 B CN 115657338B CN 202211328980 A CN202211328980 A CN 202211328980A CN 115657338 B CN115657338 B CN 115657338B
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- 239000004038 photonic crystal Substances 0.000 title claims abstract description 55
- 239000012782 phase change material Substances 0.000 title claims abstract description 45
- 230000003287 optical effect Effects 0.000 title claims abstract description 32
- 238000005538 encapsulation Methods 0.000 claims description 7
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 230000005693 optoelectronics Effects 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 230000007704 transition Effects 0.000 description 3
- 230000003993 interaction Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention provides an optical memory based on a photonic crystal nano-beam modulated by a phase change material, which comprises: an aperture chirped photonic crystal nano beam, wherein a P-type doped region is formed on a first side of the center position of the aperture chirped photonic crystal nano beam, an N-type doped region is formed on a second side of the center position of the aperture chirped photonic crystal nano beam, and a phase change material is sputtered on the center position of the aperture chirped photonic crystal nano beam; and a space is formed between the central position of the aperture chirped photonic crystal nano beam and the P-type doped region, and a space is formed between the central position of the aperture chirped photonic crystal nano beam and the N-type doped region. The invention can well overcome the defect of unstable tuning of the refractive index of the silicon-based waveguide by using a phase change material through a thermo-optical effect or an electro-optical effect.
Description
Technical Field
The invention relates to the technical field of silicon-based photonics, in particular to an optical memory based on a photonic crystal nano-beam modulated by a phase change material.
Background
Photonic integration is a development trend of optical systems, and is widely applied to various optical interconnection and signal processing systems. Similar to integrated circuits for a particular application, photonic integrated circuits may also be designed to meet the fixed light circuit for a particular use. However, for general purposes, a programmable optical circuit is more desirable, and different functions can be provided by simply resetting several critical components.
In silicon photonics, the refractive index of silicon-based waveguides can be tuned by thermo-optic or electro-optic effects, but both are unstable and require constant energy to maintain state. For an optical memory, maintaining its state with a thermo-optic effect or an electro-optic effect would require a large electrostatic power consumption.
The photonic crystal nano beam is a typical photonic crystal microcavity, and the periodicity of the original structure is destroyed by artificially introducing defects into the one-dimensional photonic crystal, so that the light (resonant frequency) with specific frequency which cannot be transmitted in the forbidden band originally can pass through the photonic crystal, the photonic crystal has high quality factor, small mode volume and strong interaction between light and substances, and has wide application in the fields of various active and passive optical devices, and can realize the regulation and control of photons on the nano scale.
Disclosure of Invention
In order to solve the technical problem that the refractive index of a silicon-based waveguide is unstable in tuning through a thermo-optical effect or an electro-optical effect in the prior art, an object of the present invention is to provide an optical memory based on a photonic crystal nano-beam modulated by a phase change material, the optical memory comprises:
an aperture chirped photonic crystal nano-beam,
Forming a P-type doped region on a first side of the center position of the aperture chirped photonic crystal nano-beam, forming an N-type doped region on a second side of the center position of the aperture chirped photonic crystal nano-beam, and sputtering a phase change material on the center position of the aperture chirped photonic crystal nano-beam;
And a space is formed between the central position of the aperture chirped photonic crystal nano beam and the P-type doped region, and a space is formed between the central position of the aperture chirped photonic crystal nano beam and the N-type doped region.
Further, the P-type doped region is connected with the signal electrode, and the N-type doped region is connected with the grounding electrode.
Further, the phase change material, the P-type doped region, the N-type doped region, and a part of the signal electrode and a part of the ground electrode cover a packaging layer.
Further, the encapsulation layer is an alumina encapsulation layer.
Further, on the aperture chirped photonic crystal nano beam, a first circular hole array and a second circular hole array are symmetrically arranged at the central position.
Further, the first circular hole array comprises a first circular hole and a second circular hole, and the radius of the first circular hole is larger than that of the second circular hole;
The second circular hole array comprises a third circular hole and a fourth circular hole, and the radius of the third circular hole is larger than that of the fourth circular hole;
the radius of the round hole between the first round hole and the second round hole is decreased in a quadratic rate; the radius of the round hole between the third round hole and the fourth round hole is decreased at a quadratic rate.
The optical memory based on the photonic crystal nano beam modulated by the phase change material can well overcome the defect that the refractive index of a silicon-based waveguide is unstable in tuning by a thermo-optical effect or an electro-optical effect, the phase change material has a crystalline state, an amorphous state and a multistage transition state between the crystalline state and the amorphous state, and the state of the phase change material is nonvolatile, so that the photonic memory formed by the phase change material can maintain the original state under the condition of no energy supply.
The optical memory based on the photonic crystal nano beam modulated by the phase change material provided by the invention has wide application prospect in photon calculation by utilizing the photonic crystal nano beam and the optical memory structure designed by the phase change material characteristics.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 schematically illustrates a schematic structure of an optical memory based on a photonic crystal nano-beam modulated by a phase change material according to an embodiment of the present invention.
FIG. 2 shows the output spectra of an optical memory of the present invention based on a phase change material modulating a photonic crystal nanobeam in different states of the phase change material.
Detailed Description
To further clarify the above and other features and advantages of the present invention, a further description of the invention will be rendered by reference to the appended drawings. It should be understood that the specific embodiments presented herein are for purposes of explanation to those skilled in the art and are intended to be illustrative only and not limiting.
In order to solve the technical problem that the refractive index of a silicon-based waveguide is unstable in tuning through a thermo-optical effect or an electro-optical effect in the prior art, an optical memory for modulating a photonic crystal nano-beam based on a phase change material is provided, wherein the optical memory comprises: the aperture chirped photonic crystal nanobeam 100, the aperture chirped photonic crystal nanobeam 100 includes a light input end 101 and a light output end 102.
On the aperture chirped photonic crystal nano-beam 100, a first circular hole array 103 and a second circular hole array 104 are symmetrically arranged at the central position to form a Gaussian mirror image, so that the local capacity of light in a resonant cavity and the interaction between the light and a phase change material are enhanced, and the performance of an optical memory is improved.
The first circular hole array 103 includes a first circular hole 1032 and a second circular hole 1031, the radius of the first circular hole 1032 being greater than the radius of the second circular hole 1031. The radius of the circular hole between the first circular hole 1032 and the second circular hole 1031 decreases at a quadratic rate.
Likewise, the second circular hole array 104 includes a third circular hole and a fourth circular hole, the radius of the third circular hole being greater than the radius of the fourth circular hole. The radius of the round hole between the third round hole and the fourth round hole is decreased at a quadratic rate.
In a preferred embodiment, the aperture chirped photonic crystal nanobeam 100 has a waveguide width of 500nm and a lattice constant of 500nm. The radii of the first circular hole 1032 and the third circular hole are 100nm, and the radii of the second circular hole 1301 and the fourth circular hole are 30nm. The distance between the first circular hole 1032 and the third circular hole is 700nm.
According to an embodiment of the present invention, the P-type doped region 200 is formed at a first side of the center of the aperture chirped photonic crystal nano-beam 100, the N-type doped region 300 is formed at a second side of the center of the aperture chirped photonic crystal nano-beam 100, and the phase change material 400 is sputtered at the center of the aperture chirped photonic crystal nano-beam 100. The aperture chirped photonic crystal nano-beam 100 of the present invention is combined with the phase change material 400 to constitute a nonvolatile optical storage device. In some preferred embodiments, the phase change material 400 is sputtered onto the center of the aperture chirped photonic crystal nanobeam 100 in a thin film sputtering of phase change material.
A space h is formed between the central position of the aperture chirped photonic crystal nano-beam 100 and the P-type doped region 200, and a space is formed between the central position of the aperture chirped photonic crystal nano-beam 100 and the N-type doped region 300.
According to an embodiment of the present invention, in order to form a PIN junction heating region for modulating the state of the phase change material 400, P-type ions and N-type ions are respectively heavily doped and implanted in a region range of a distance h between both sides of the center position of the aperture chirped photonic crystal nano-beam 100 to form a P-type doped region 200 and an N-type doped region 300. The spacing h should be close enough to the radially chirped photonic crystal nanobeam 100 to reduce resistance while being far enough away from the TE mode distribution to ensure negligible optical loss.
According to an embodiment of the present invention, the P-type doped region 200 is connected to the signal electrode 500, and the n-type doped region 300 is connected to the ground electrode 600. Further, the P-type doped region 200 makes low-resistance ohmic contact with the signal electrode 500, and the N-type doped region 300 makes low-resistance ohmic contact with the ground electrode 600.
In a preferred embodiment, P-type ions and N-type ions are heavily doped and injected at both sides of the center position of the aperture chirped photonic crystal nano-beam 100 to form the P-type doped region 200 and the N-type doped region 300, and the P-type doped region 200 is in low resistance ohmic contact with the signal electrode 500, and the N-type doped region 300 is in low resistance ohmic contact with the ground electrode 600 and then is metallized. Then, the phase change material 400 is sputtered to the center of the aperture chirped photonic crystal nano-beam 100 by means of phase change material thin film sputtering.
In a further embodiment, the phase change material 400 is a 10nm thick phase change material Ge-Sb-Te (GST) patch film having dimensions of 500nm by 500nm.
According to an embodiment of the present invention, the phase change material 400, the P-type doped region 200, the N-type doped region 300, and a portion of the signal electrode 500 and a portion of the ground electrode 600 cover a packaging layer 700. Preferably, the encapsulation layer 700 is a 30nm thick alumina encapsulation layer deposited by atomic layer to avoid oxidation of the phase change material 400 and PIN junction heating regions and to prevent flow and deformation of the melted phase change material 400.
The phase change material is in a semiconductor property in an amorphous state, and has a high resistance value; in crystalline state, the alloy exhibits semi-metallic properties and has a low resistance. The phase change material is transformed from a metastable amorphous phase to a steady state crystalline phase by heating the material above its crystallization temperature for a time sufficient to obtain an amorphous material by heating the crystalline phase to a temperature above its melting point and rapidly annealing the material to cool the material to solidify the material. It should be noted that different heating or cooling times may cause the phase change material to exhibit different intermediate transition states. The refractive indices of the phase change materials in different states are also different. The phase change material attached to the central region of the aperture chirped photonic crystal nanobeam interacts with the evanescent wave exposed at the periphery of the waveguide, causing a change in the effective refractive index of the waveguide, which in turn causes a shift in the resonant wavelength. Therefore, the information on the optical memory can be read out by the shift of the output optical resonance wavelength, and the optical reading of the stored information is realized.
By the nature of the phase change material, different electrical pulses are applied during amorphization, and different heating modes are formed in the PIN junction heating zone, so that the phase change material presents different transition states between crystalline and amorphous states, and information is written into the photon memory. When a broad spectrum light with a proper wave band is input into the optical memory, resonance is generated on the photonic crystal nano-beam, the resonance wavelength of the output light is related to the state of the phase change material, and the output spectrum of the optical memory based on the photonic crystal nano-beam is modulated by the phase change material under different states of the phase change material as shown in fig. 2.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (5)
1. An optical memory based on a phase change material modulating photonic crystal nano-beam, the optical memory comprising:
an aperture chirped photonic crystal nano-beam,
Forming a P-type doped region on a first side of the center position of the aperture chirped photonic crystal nano-beam, forming an N-type doped region on a second side of the center position of the aperture chirped photonic crystal nano-beam, and sputtering a phase change material on the center position of the aperture chirped photonic crystal nano-beam;
The space is formed between the center position of the aperture chirped photonic crystal nano beam and the P-type doped region, and the space is formed between the center position of the aperture chirped photonic crystal nano beam and the N-type doped region so as to reduce the resistance between the P-type doped region and the N-type doped region and keep away from TE mode distribution;
the P-type doped region is connected with the signal electrode, and the N-type doped region is connected with the grounding electrode.
2. The optical memory of claim 1 wherein the phase change material, P-doped region, N-doped region, and portions of the signal electrode and ground electrode cover an encapsulation layer.
3. The optical memory of claim 2 wherein the encapsulation layer is an alumina encapsulation layer.
4. The optical memory of claim 1, wherein the first circular hole array and the second circular hole array are symmetrically arranged at a central position on the aperture chirped photonic crystal nano-beam.
5. The optical memory of claim 4 wherein the first array of circular holes comprises a first circular hole and a second circular hole, the first circular hole having a radius greater than a radius of the second circular hole;
The second circular hole array comprises a third circular hole and a fourth circular hole, and the radius of the third circular hole is larger than that of the fourth circular hole;
the radius of the round hole between the first round hole and the second round hole is decreased in a quadratic rate; the radius of the round hole between the third round hole and the fourth round hole is decreased at a quadratic rate.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105044932A (en) * | 2015-07-10 | 2015-11-11 | 上海交通大学 | Graphene electro-optic modulation device based on photonic crystal nanometer beam resonant cavity |
| CN108803090A (en) * | 2018-05-02 | 2018-11-13 | 上海交通大学 | Electrooptic modulator based on silicon and vanadium dioxide composite waveguide |
| CN109917565A (en) * | 2019-02-18 | 2019-06-21 | 上海交通大学 | Based on the multistage optical attenuator of silicon-phase-change material hybrid integrated |
| CN110911557A (en) * | 2019-10-30 | 2020-03-24 | 华中科技大学 | Doped Ge-Sb phase change material, phase change memory and preparation method thereof |
| CN115032742A (en) * | 2022-06-23 | 2022-09-09 | 南京邮电大学 | Diamond-circle mixed type one-dimensional photonic crystal nano-beam micro-cavity structure |
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- 2022-10-27 CN CN202211328980.9A patent/CN115657338B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105044932A (en) * | 2015-07-10 | 2015-11-11 | 上海交通大学 | Graphene electro-optic modulation device based on photonic crystal nanometer beam resonant cavity |
| CN108803090A (en) * | 2018-05-02 | 2018-11-13 | 上海交通大学 | Electrooptic modulator based on silicon and vanadium dioxide composite waveguide |
| CN109917565A (en) * | 2019-02-18 | 2019-06-21 | 上海交通大学 | Based on the multistage optical attenuator of silicon-phase-change material hybrid integrated |
| CN110911557A (en) * | 2019-10-30 | 2020-03-24 | 华中科技大学 | Doped Ge-Sb phase change material, phase change memory and preparation method thereof |
| CN115032742A (en) * | 2022-06-23 | 2022-09-09 | 南京邮电大学 | Diamond-circle mixed type one-dimensional photonic crystal nano-beam micro-cavity structure |
Non-Patent Citations (2)
| Title |
|---|
| Miniature Silicon Nanobeam Resonator Tuned by GST Phase Change Material;Linjie Zhou等;CLEO Pacific Rim 2018;20181231;Device structure and simulation * |
| Non-volatile optical memory based on a slot nanobeam resonator filled with GST material;Hao Hu等;2018 Asia Communications and Photonics Conference;20181231;DEVICE STRUCTURE AND PRINCIPLE * |
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