CN115656210A - Optical detection system, control method thereof, electronic apparatus, and storage medium - Google Patents
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Abstract
The present application relates to an optical detection system, a control method thereof, an electronic apparatus, and a storage medium. The optical detection system includes: the device comprises an illumination light source, a light transmission channel, a detection imaging device and an objective table for placing a semiconductor sample to be detected; one end of the light transmission channel close to the objective table is provided with a microscope objective group; a spectroscope is arranged at the communication position of the illumination light source and the light transmission channel; a shading component is arranged between the spectroscope and the microscope objective group and used for starting and shading the light of the illumination light source during dark field detection to form annular illumination light; the detection imaging device is arranged at one end, far away from the objective table, of the light transmission channel and used for generating a surface detection image of the semiconductor sample to be detected. The scheme provided by the application can meet the requirement of high-speed switching detection of a bright field and a dark field in the optical detection process, improves the contrast of a defect part and a background part in a surface detection image during dark field detection, and improves the dark field detection precision.
Description
Technical Field
The present disclosure relates to the field of optical inspection technologies, and in particular, to an optical inspection system, a control method thereof, an electronic device, and a storage medium.
Background
With the continuous development of semiconductor defect detection technology, the requirements on semiconductor detection precision are higher and higher, and an automatic focusing microscope detection system is developed to meet the requirements on the submicron detection precision of semiconductor defects. Two illumination modes commonly used in the inspection system are bright field illumination and dark field illumination. The typical Abbe bright field condenser can be applied to the detection system to switch the bright field and the dark field, but the bright field and the dark field are switched in a mechanical inserting and pulling mode of a diaphragm, so that a bright field and dark field illumination mode cannot be switched rapidly, and the requirement of high-speed bright field and dark field switching detection in the optical detection process cannot be met.
In order to solve the problem of rapidly switching the bright field illumination mode and the dark field illumination mode, an inner coaxial point light source mode is adopted for bright field illumination of an automatic focusing microscope system, an external low-angle annular optical fiber light source mode is adopted for dark field illumination, but the dark field illumination mode has the defect that the dark field is low-angle annular light, so that more stray light exists in a detection image, the contrast of the detection image is poor, and the optical detection effect is influenced.
In view of the above, it is desirable to provide an optical detection system capable of rapidly switching bright and dark field illumination and detecting a dark field image with high contrast.
Disclosure of Invention
In order to solve the problems in the related art, the application provides an optical detection system, a control method thereof, an electronic device and a storage medium, and the optical detection system can meet the requirement of high-speed switching detection of a bright field and a dark field in an optical detection process, improve the contrast of a defect part and a background part in a surface detection image in dark field detection, and improve the dark field detection precision.
A first aspect of the present application provides an optical detection system comprising:
the device comprises an illumination light source 1, a light transmission channel 2, a detection imaging device 3 and an objective table 4 for placing a semiconductor sample 41 to be detected;
a microscope objective group 5 is arranged at one end of the light transmission channel 2 close to the objective table 4, and the microscope objective group 5 comprises a first objective lens and a second objective lens;
a spectroscope 21 is arranged at the communication position of the illumination light source 1 and the light transmission channel 2, so that the light of the illumination light source 1 can be reflected to the microscope objective group 5 through the spectroscope 21 and projected onto a semiconductor sample 41 to be measured through a first objective lens or a second objective lens;
a shading component 6 is arranged between the spectroscope 21 and the microscope objective group 5, and the shading component 6 is used for starting and shading the light of the illumination light source 1 during dark field detection to form annular illumination light;
the detection imaging device 3 is arranged at one end of the light transmission channel 2 far away from the object stage 4, and the detection imaging device 3 is used for generating a surface detection image of the semiconductor sample 41 to be detected.
In one embodiment, the shutter assembly 6 includes a liquid crystal shutter 61 and a shutter driver 62;
the liquid crystal stop 61 is electrically connected to the stop light-shielding driver 62.
In one embodiment, the diaphragm shading driver 62 includes a first voltage driving unit and a second voltage driving unit;
the liquid crystal diaphragm 61 is electrically connected with the first voltage driving unit and the second voltage driving unit respectively;
wherein, the diameter of a shading surface formed by the first voltage driving unit driving the liquid crystal diaphragm 61 is 80% of the light passing diameter of the first objective lens; the second voltage driving unit drives the liquid crystal stop 61 to form a light shielding surface with a diameter 80% of the light passing diameter of the second objective lens.
In one embodiment, the illumination source 1 includes an incident light source 11 and a condenser lens 12;
the condensing lens 12 is disposed between the beam splitter 21 and the incident light source 11, and the condensing lens 12 is used for converting the spherical light of the incident light source 11 into planar light.
In one embodiment, an imaging lens 22 is further disposed in the light transmission channel 2;
the imaging lens 22 is disposed between the spectroscope 21 and the detection imaging device 3, and the imaging lens 22 is configured to converge the surface feedback light of the semiconductor sample 41 to be detected in the imaging lens 31 of the detection imaging device 3.
A second aspect of the present application provides an optical detection system control method for controlling the optical detection system according to any one of the first aspects to perform detection, including:
receiving an optical detection request, wherein the optical detection request comprises a bright field detection request and a dark field detection request;
if the optical detection request is a dark field detection request, starting a shading assembly in response to the dark field detection request;
and imaging the semiconductor sample to be detected by the detection imaging equipment to obtain a surface detection image for dark field detection.
In one embodiment, activating the shutter assembly in response to a dark field detection request includes:
and responding to the dark field detection request, starting a diaphragm shading driver in the shading assembly to supply power to a liquid crystal diaphragm in the shading assembly.
In one embodiment, activating a stop shutter driver in a shutter assembly to power a liquid crystal stop in the shutter assembly comprises:
monitoring an objective lens switching event;
if the switching event of the objective lens is monitored, acquiring the objective lens multiplying power parameter of the current switching objective lens;
mapping the objective lens magnification parameter according to the objective lens magnification parameter of the current switching objective lens to obtain the light passing diameter of the current switching objective lens;
and starting a matched voltage driving unit in the diaphragm shading driver according to the light passing diameter of the current switching objective lens so that the matched voltage driving unit can supply power to the liquid crystal diaphragm.
A third aspect of the present application provides an electronic device comprising:
a processor; and
a memory having executable code stored thereon, which when executed by the processor, causes the processor to perform the method as described above.
A fourth aspect of the present application provides a non-transitory machine-readable storage medium having stored thereon executable code that, when executed by a processor of an electronic device, causes the processor to perform a method as described above.
The technical scheme provided by the application can comprise the following beneficial effects:
the optical detection system comprises an illumination light source, a light transmission channel, detection imaging equipment and an objective table for placing a semiconductor sample to be detected, wherein a microscope objective group is arranged at one end, close to the objective table, of the light transmission channel, the microscope objective group comprises a plurality of objective lenses including a first objective lens and a second objective lens, a spectroscope is arranged at a communication position of the illumination light source and the light transmission channel, so that light of the illumination light source can be reflected to the microscope objective group through the spectroscope and projected to the semiconductor sample to be detected through the first objective lens or the second objective lens, a shading assembly is arranged between the spectroscope and the microscope objective group and used for starting and shading the light of the illumination light source during dark field detection to form annular illumination light, and the requirement of high-speed switching detection of a light field and a dark field during optical detection can be met; the detection imaging device is arranged at one end, far away from the objective table, of the light transmission channel and used for generating a surface detection image of the semiconductor sample to be detected. Thereby annular illumination light can be through first objective or second objective focus back when dark field detects, throw to the semiconductor sample that awaits measuring with certain angle, be favorable to polishing the defect on the semiconductor sample that awaits measuring, simultaneously, the light that shading component sheltered from originally can directly pass through first objective or second objective and throw to the semiconductor sample that awaits measuring perpendicularly, can polish the whole surface of the semiconductor sample that awaits measuring and lead to the contrast ratio of defect part in the surface detection image and background part to hang down, and shelter from through shading component then can reduce the whole surface brightness of the semiconductor sample that awaits measuring, thereby show the defect on the semiconductor sample that awaits measuring more prominently, be favorable to promoting dark field detection precision.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
The above and other objects, features and advantages of exemplary embodiments of the present application will become readily apparent from the following detailed description read in conjunction with the accompanying drawings. In the drawings, several embodiments of the present application are illustrated by way of example and not by way of limitation, and like or corresponding reference numerals indicate like or corresponding parts.
FIG. 1 is a schematic diagram of an overall structure of an optical inspection system according to an embodiment of the present application;
FIG. 2 is a schematic diagram of an internal structure of an optical inspection system according to an embodiment of the present application;
FIG. 3 is a flow chart of a method for controlling an optical inspection system according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of an electronic device shown in an embodiment of the present application.
Detailed Description
Embodiments will now be described with reference to the accompanying drawings. It will be appreciated that for simplicity and clarity of illustration, where considered appropriate, reference numerals may be repeated among the figures to indicate corresponding or analogous elements. In addition, this application sets forth numerous specific details in order to provide a thorough understanding of the embodiments described herein. However, it will be understood by those of ordinary skill in the art that the embodiments described herein may be practiced without these specific details. In other instances, well-known methods, procedures, and components have not been described in detail so as not to obscure the embodiments described herein. Moreover, this description is not to be taken as limiting the scope of the embodiments described herein.
Two illumination modes commonly used in autofocus microscope inspection systems are bright field illumination and dark field illumination. The typical Abbe bright field condenser can be applied to the detection system to switch the bright field and the dark field, but the bright field and the dark field are switched in a mechanical inserting and pulling mode of a diaphragm, so that a bright field and dark field illumination mode cannot be switched rapidly, and the requirement of high-speed bright field and dark field switching detection in the optical detection process cannot be met. In order to solve the problem of rapidly switching the bright field illumination mode and the dark field illumination mode, an inner coaxial point light source mode is adopted for bright field illumination of an automatic focusing microscope system, an external low-angle annular optical fiber light source mode is adopted for dark field illumination, but the dark field illumination mode has the defect that the dark field is low-angle annular light, so that more stray light exists in a detection image, the contrast of the detection image is poor, and the optical detection effect is influenced. In view of the above, it is desirable to provide an optical inspection system capable of rapidly switching bright and dark field illumination and detecting dark field images with high contrast.
In view of the above problems, an embodiment of the present application provides an optical detection system, which can meet the requirement of high-speed switching detection of a bright field and a dark field in an optical detection process, improve the contrast between a defect portion and a background portion in a surface detection image during dark field detection, and improve dark field detection accuracy.
The technical solutions of the embodiments of the present application are described in detail below with reference to the accompanying drawings.
Fig. 1 is a schematic overall structure diagram of an optical detection system according to an embodiment of the present application, fig. 2 is a schematic internal structure diagram of the optical detection system according to the embodiment of the present application, and referring to fig. 1 and fig. 2, the optical detection system according to the embodiment of the present application may include:
the illumination light source 1, the light transmission channel 2, the detection imaging device 3, and the stage 4 for placing the semiconductor sample 41 to be tested, wherein one end of the light transmission channel 2 near the stage 4 is provided with a microscope objective group 5, the microscope objective group 5 at least includes a first objective lens and a second objective lens, it can be understood that, as shown in fig. 1, the microscope objective group 5 may further include, but is not limited to, a third objective lens and a fourth objective lens, in the present embodiment, the microscope objective group 5 includes the first objective lens and the second objective lens as an example for exemplary illustration, the number of objective lenses is determined according to an actual application situation, and is not limited herein. The first objective lens and the second objective lens are objective lenses with different magnifications respectively, and the conventional magnification of the objective lenses can be 2X, 5X, 10X, 20X, 50X, 100X and the like, so that the first objective lens and the second objective lens respectively have different objective lens apertures, and the different objective lens apertures can cause the first objective lens and the second objective lens to respectively have different light-passing diameters.
A spectroscope 21 is disposed at a communication position of the illumination light source 1 and the light transmission channel 2, so that light of the illumination light source 1 can be reflected to the microscope objective group 5 through the spectroscope 21 and projected onto a semiconductor sample 41 to be measured through the first objective lens or the second objective lens. In the embodiment of the present application, the spectroscope 21 may adopt a semi-transparent and semi-reflective mirror, or may adopt other lenses, which is determined according to the practical application, and is not limited herein. In the embodiment of the present application, for example, the illumination light source 1 and the light transmission channel 2 may be vertically communicated, and if the illumination light source 1 and the light transmission channel 2 are vertically communicated, an included angle between the beam splitter 21 and a propagation track of the light of the illumination light source 1 is 45 °, so that the light of the illumination light source 1 can be projected onto the semiconductor sample 41 to be measured through the first objective lens or the second objective lens along an optical axis of the first objective lens or the second objective lens.
A shading component 6 is arranged between the spectroscope 21 and the microscope objective group 5, and the shading component 6 is used for starting and shading the light of the illumination light source 1 during dark field detection to form annular illumination light. It can be understood that when the light shielding assembly 6 is closed, the light is not shielded, and the light of the illumination light source 1 can be used as a coaxial light source of the first objective lens or the second objective lens for bright field detection illumination; when the light shielding assembly 6 is activated, the central portion of the light of the illumination source 1 can be shielded, and the central portion of the light of the illumination source 1, without being shielded, would be projected onto the semiconductor sample 41 to be measured through the central position of the first objective lens or the second objective lens, and then reflected back to the first objective lens or the second objective lens, and then returned to the light transmission channel 2 through the first objective lens or the second objective lens. However, in the dark field detection process, the central part of the illumination light source 1 will illuminate the whole surface of the semiconductor sample to be detected, resulting in too high background brightness of the imaged image, increasing the difficulty of detecting defective bright spots in the dark field detection, and being not beneficial to improving the dark field detection precision. Under the shielding effect of the light shielding assembly 6, not only the central part light of the illumination light source 1 can be shielded, but also only the peripheral light of the illumination light source 1 is allowed to pass through the light shielding assembly 6, so as to form annular illumination light, as shown in fig. 2, the annular illumination light is obliquely projected onto the semiconductor sample 41 to be measured at a certain angle after being focused by the first objective lens or the second objective lens, it can be understood that if there are particle appearance defects such as a protrusion defect on the semiconductor sample 41 to be measured, the obliquely projected light can illuminate the appearance defects, and the light scattered by the appearance defects returns to the light transmission channel 2 through the first objective lens or the second objective lens again for subsequent imaging; the light projected obliquely is reflected at other positions except for the appearance defect and does not return to the light transmission channel 2. Therefore, the contrast between the defect bright points and the image background can be improved after imaging, and the high-speed switching of bright and dark field illumination can be realized by controlling the starting and the closing of the shading component 6.
The detection imaging device 3 is disposed at an end of the light transmission channel 2 away from the stage 4, and the detection imaging device 3 is configured to generate a surface detection image of the semiconductor sample 41 to be detected, where it is understood that in the case of bright field illumination, the surface detection image is a detection image corresponding to bright field detection, and in the case of dark field illumination, the surface detection image is a detection image corresponding to dark field detection.
The optical detection system comprises an illumination light source, a light transmission channel, detection imaging equipment and an objective table for placing a semiconductor sample to be detected, wherein a microscope objective group is arranged at one end, close to the objective table, of the light transmission channel, the microscope objective group comprises a plurality of objective lenses including a first objective lens and a second objective lens, a spectroscope is arranged at a communication position of the illumination light source and the light transmission channel, so that light of the illumination light source can be reflected to the microscope objective group through the spectroscope and projected to the semiconductor sample to be detected through the first objective lens or the second objective lens, a shading assembly is arranged between the spectroscope and the microscope objective group and used for starting and shading the light of the illumination light source during dark field detection to form annular illumination light, and the requirement of high-speed switching detection of a light field and a dark field during optical detection can be met; the detection imaging device is arranged at one end, far away from the objective table, of the light transmission channel and used for generating a surface detection image of the semiconductor sample to be detected. Therefore, when dark field detection is carried out, annular illuminating light can be focused through the first objective lens or the second objective lens and then is projected onto a semiconductor sample to be detected at a certain angle, and therefore defects on the semiconductor sample to be detected can be lightened, meanwhile, light shielded by the shading component originally vertically passes through the first objective lens or the second objective lens and is projected onto the semiconductor sample to be detected, the whole surface of the semiconductor sample to be detected can be lightened, the contrast of a defect part and a background part in a surface detection image is too low, the whole surface brightness of the semiconductor sample to be detected can be reduced through shielding of the shading component, the defects on the semiconductor sample to be detected are more highlighted, and dark field detection accuracy is improved.
In some embodiments, the liquid crystal diaphragm is controlled by the diaphragm shading driver to realize the function of the shading component, so that the high-speed switching of the illumination of the bright and dark fields can be realized. Referring to fig. 2, an optical inspection system according to an embodiment of the present disclosure may include:
the shading assembly 6 comprises a liquid crystal diaphragm 61 and a diaphragm shading driver 62, and the liquid crystal diaphragm 61 is electrically connected with the diaphragm shading driver 62. The liquid crystal aperture 61 is an aperture device based on a liquid crystal array, and the aperture is an entity that plays a role of limiting a light beam in an optical system. The liquid crystal in the liquid crystal diaphragm 61 can change the arrangement state under the influence of the electric field, when the diaphragm shading driver 62 does not electrify the liquid crystal diaphragm 61, the long axis of the liquid crystal molecules is vertical to the light propagation direction, the liquid crystal is in the light passing state, and the liquid crystal diaphragm 61 does not block light at this time; when the aperture light-shielding driver 62 energizes the liquid crystal aperture 61, the long axes of the liquid crystal molecules are parallel to the light propagation direction, the liquid crystal is in the light-shielding state, and the liquid crystal aperture 61 has the light-shielding function at this time.
Further, the diaphragm shading driver 62 includes, but is not limited to, a first voltage driving unit and a second voltage driving unit, and for example, the first voltage driving unit may provide 5V power supply, and the second voltage driving unit may provide 8V power supply, which is determined according to the practical application, and is not limited herein. The liquid crystal diaphragm 61 is respectively and electrically connected with the first voltage driving unit and the second voltage driving unit, wherein the diameter of a shading surface formed by driving the liquid crystal diaphragm 61 by the first voltage driving unit is 80% of the light passing diameter of the first objective lens; the second voltage driving unit drives the liquid crystal diaphragm 61 to form a light shielding surface with a diameter 80% of the light passing diameter of the second objective lens. In the embodiment of the present application, the value of 80% is only exemplary, and in practical application, the value is determined according to practical application conditions, and is not limited herein. It can be further understood that, in order to block the central portion of the light of the illumination light source 1, the blocking surface and the light-passing hole of the first objective lens are concentric circles, which ensures that 20% of the light of the illumination light source 1 can form annular illumination light to be input into the first objective lens or the second objective lens. Therefore, when the objective lens is switched, the proper voltage driving unit can be selected according to the switched objective lens to electrify the liquid crystal diaphragm 61 so as to form a shading surface matched with the switched objective lens, and it can be understood that each objective lens can be correspondingly matched with one voltage driving unit to form a shading surface with a corresponding proper diameter, so that each objective lens can finish dark field detection work with high quality, the situation that the shading surface is too large and no light enters the objective lens, and the situation that the background brightness of an image is still too high after imaging due to too small shading surface is prevented.
In some embodiments, the illumination source 1 includes an incident light source 11 and a condensing lens 12, wherein the condensing lens 12 is disposed between the beam splitter 21 and the incident light source 11, and the condensing lens 12 is used for converting the spherical light of the incident light source 11 into a planar light, so as to improve uniformity of the light source and improve utilization rate of the incident light source 11.
In some embodiments, the light transmission channel 2 is further provided with an imaging lens 22, the imaging lens 22 is disposed between the spectroscope 21 and the detection imaging device 3, and the imaging lens 22 is configured to converge the surface feedback light of the semiconductor sample 41 to be detected in the imaging lens 31 of the detection imaging device 3, so as to improve the lens light receiving efficiency of the detection imaging device and improve the imaging quality.
Corresponding to the embodiment of the optical detection system, the application also provides a control method of the optical detection system and a corresponding embodiment. Fig. 3 is a schematic flowchart of a control method of an optical detection system according to an embodiment of the present disclosure, and referring to fig. 3, the control method of the optical detection system according to the embodiment of the present disclosure may include:
in step 301, an optical detection request is received.
In the embodiment of the present application, the optical detection request includes a bright field detection request and a dark field detection request, where the dark field detection request may refer to request information generated when the bright field detection is switched to the dark field detection; similarly, the bright field detection request may refer to request information generated when dark field detection is switched to bright field detection.
In step 302, if the optical inspection request is a dark field inspection request, the shading assembly is activated in response to the dark field inspection request.
Specifically, in response to a dark field detection request, a diaphragm shading driver in the shading assembly is started to supply power to a liquid crystal diaphragm in the shading assembly.
In the embodiment of the present application, it is first required to monitor the objective lens switching event, which includes switching the first objective lens to the second objective lens, and if the microscope objective lens group further includes a third objective lens and a fourth objective lens, the objective lens switching event may further include switching the first objective lens to the third objective lens, switching the first objective lens to the fourth objective lens, switching the second objective lens to the third objective lens, switching the second objective lens to the fourth objective lens, switching the third objective lens to the fourth objective lens, and so on. For example, a rotation detection sensor may be disposed on the objective lens mounting turntable, the rotation detection sensor being configured to detect whether the objective lens mounting turntable is in a rotating state or a stationary state, and to detect a rotating angle to determine which objective lens to switch to, and when the objective lens mounting turntable is detected to be in the rotating state, an objective lens switching signal is generated, and the generated objective lens switching signal and the rotation angle information are fed back to the controller or the processor, so as to achieve the effect of monitoring the objective lens switching event. It is also possible to monitor the control signal for controlling the switching of the objective lens directly, and if the control signal for controlling the switching of the objective lens can be monitored, it is possible to determine that the objective lens is switched, and to which objective lens the switching is known from the control signal.
It is understood that, in practical applications, other methods may be used to detect the objective lens switching event, and an appropriate monitoring method needs to be selected according to practical application conditions, which is not limited herein.
Then, if an objective lens switching event is monitored, acquiring the objective lens magnification parameter of the current switching objective lens, and acquiring the objective lens magnification parameter of the current switching objective lens from the locally stored objective lens parameters.
And then, mapping the objective lens magnification parameter according to the objective lens magnification parameter of the current switching objective lens to obtain the light transmission diameter of the current switching objective lens. The mapping table stored locally can be inquired according to the objective lens magnification parameter, and the mapping table can be a mapping table reflecting the mapping relation between the objective lens magnification parameter and the light transmission diameter and the light receiving angle of the objective lens, so that the light transmission diameter of the current switching objective lens corresponding to the objective lens magnification parameter of the current switching objective lens can be inquired. For example, assuming that the currently switched objective lens is an objective lens with a magnification of 100X, the light passing diameter of the mapped objective lens may be a preset diameter parameter, for example, 1cm, and it is understood that the mapping relationship is determined according to the actual application situation or the pre-test result, and is not limited herein.
And finally, starting a matched voltage driving unit in the diaphragm shading driver according to the light passing diameter of the current switching objective lens so that the matched voltage driving unit can supply power to the liquid crystal diaphragm. For example, assuming that the light transmission diameter of the currently switched objective lens is 1cm, in order to ensure that 20% of the light from the illumination light source can form annular illumination light to be input into the currently switched objective lens, it is necessary to select a voltage driving unit, such as the first voltage driving unit, which can drive the liquid crystal stop to form a light shielding surface with a diameter of 80% of the light transmission diameter of the currently switched objective lens. The method is determined according to the practical application, and is not limited herein.
In step 303, a semiconductor sample to be tested is imaged by a test imaging device.
And obtaining a surface detection image for dark field detection after imaging. It can be understood that, accordingly, if the optical detection request is a bright field detection request, the light shielding component does not need to be started, and a surface detection image for performing bright field detection can be obtained after the semiconductor sample to be detected is imaged by the detection imaging device.
Corresponding to the embodiment of the control method of the optical detection system, the application also provides an electronic device for executing the control method of the optical detection system and a corresponding embodiment.
Fig. 4 shows a block diagram of a hardware configuration of an electronic device 800 that can implement the optical detection system control method of the embodiment of the present application. As shown in fig. 4, electronic device 800 may include a processor 810 and a memory 820. In the electronic device 800 of fig. 4, only constituent elements related to the present embodiment are shown. Thus, it will be apparent to one of ordinary skill in the art that: electronic device 800 may also include common constituent elements that are different from the constituent elements shown in fig. 4. Such as: a fixed-point arithmetic unit.
The electronic device 800 may correspond to a computing device having various processing functions, such as functions for generating a neural network, training or learning a neural network, quantizing a floating-point neural network to a fixed-point neural network, or retraining a neural network. For example, the electronic device 800 may be implemented as various types of devices, such as a Personal Computer (PC), a server device, a mobile device, and so on.
The processor 810 controls all functions of the electronic device 800. For example, the processor 810 controls all functions of the electronic device 800 by executing programs stored in the memory 820 on the electronic device 800. The processor 810 may be implemented by a Central Processing Unit (CPU), a Graphics Processing Unit (GPU), an Application Processor (AP), an artificial intelligence processor chip (IPU), etc., provided in the electronic device 800. However, the present application is not limited thereto.
In some embodiments, processor 810 may include an input/output (I/O) unit 811 and a computing unit 812. The I/O unit 811 may be used to receive various data, such as optical inspection requests. Illustratively, the computing unit 812 may be configured to activate the shutter assembly in response to a dark field inspection request received via the I/O unit 811, and thereafter image the semiconductor sample under test via the inspection imaging device. The surface detection image obtained after imaging may be output by the I/O unit 811, for example. The output data may be provided to memory 820 for reading by other devices (not shown) or may be provided directly to other devices for use.
The memory 820 is hardware for storing various data processed in the electronic device 800. For example, the memory 820 may store processed data and data to be processed in the electronic device 800. The memory 820 may store data involved in the optical detection system control method processes or to be processed by the processor 810. Further, the memory 820 may store applications, drivers, and the like to be driven by the electronic device 800. For example: the memory 820 may store various programs related to an optical detection system control method to be executed by the processor 810. The memory 820 may be a DRAM, but the present application is not limited thereto. The memory 820 may include at least one of volatile memory or nonvolatile memory. The non-volatile memory may include Read Only Memory (ROM), programmable ROM (PROM), electrically Programmable ROM (EPROM), electrically Erasable Programmable ROM (EEPROM), flash memory, phase change RAM (PRAM), magnetic RAM (MRAM), resistive RAM (RRAM), ferroelectric RAM (FRAM), and the like. Volatile memory can include Dynamic RAM (DRAM), static RAM (SRAM), synchronous DRAM (SDRAM), PRAM, MRAM, RRAM, ferroelectric RAM (FeRAM), and the like. In an embodiment, the memory 820 may include at least one of a Hard Disk Drive (HDD), a Solid State Drive (SSD), a high density flash memory (CF), a Secure Digital (SD) card, a Micro-digital (Micro-SD) card, a Mini secure digital (Mini-SD) card, an extreme digital (xD) card, a cache (caches), or a memory stick.
In summary, specific functions implemented by the memory 820 and the processor 810 of the electronic device 800 provided in the embodiments of the present disclosure may be explained with reference to the foregoing embodiments in the present disclosure, and technical effects of the foregoing embodiments can be achieved, so that detailed descriptions are omitted here.
In this embodiment, the processor 810 may be implemented in any suitable manner. For example, the processor 810 may take the form of, for example, a microprocessor or processor and a computer-readable medium that stores computer-readable program code (e.g., software or firmware) executable by the (micro) processor, logic gates, switches, an Application Specific Integrated Circuit (ASIC), a programmable logic controller and embedded microcontroller, and so forth.
It should be understood that the possible terms "first" or "second" etc. in the claims, description and drawings disclosed in this application are used for distinguishing between different objects and not for describing a particular order. The terms "comprises" and "comprising," when used in the specification and claims of this disclosure, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the present disclosure herein is for the purpose of describing particular embodiments only, and is not intended to be limiting of the disclosure. As used in the specification and claims of this disclosure, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should be further understood that the term "and/or" as used in the specification and claims of this disclosure refers to any and all possible combinations of one or more of the associated listed items and includes such combinations.
Although the embodiments of the present application are described above, the descriptions are only examples adopted for facilitating understanding of the present application, and are not intended to limit the scope and application scenarios of the present application. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure as defined by the appended claims.
It should also be appreciated that any module, unit, component, server, computer, terminal, or device executing instructions exemplified herein may include or otherwise have access to a computer-readable medium, such as a storage medium, computer storage medium, or data storage device (removable) and/or non-removable), e.g., a magnetic disk, optical disk, or magnetic tape. Computer storage media may include volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information, such as computer readable instructions, data structures, program modules or other data.
Claims (10)
1. An optical inspection system, comprising:
the device comprises an illumination light source (1), a light transmission channel (2), a detection imaging device (3) and an objective table (4) for placing a semiconductor sample (41) to be detected;
a microscope objective group (5) is arranged at one end of the light transmission channel (2) close to the objective table (4), and the microscope objective group (5) comprises a first objective lens and a second objective lens;
a spectroscope (21) is arranged at the communication position of the illumination light source (1) and the light transmission channel (2), so that light of the illumination light source (1) can be reflected to the microscope objective group (5) through the spectroscope (21) and projected to the semiconductor sample (41) to be detected through the first objective lens or the second objective lens;
a shading assembly (6) is arranged between the spectroscope (21) and the microscope objective group (5), and the shading assembly (6) is used for starting and shading the light of the illumination light source (1) during dark field detection to form annular illumination light;
the detection imaging device (3) is arranged at one end, away from the objective table (4), of the light transmission channel (2), and the detection imaging device (3) is used for generating a surface detection image of the semiconductor sample (41) to be detected.
2. The optical inspection system of claim 1,
the shading component (6) comprises a liquid crystal diaphragm (61) and a diaphragm shading driver (62);
the liquid crystal diaphragm (61) is electrically connected with the diaphragm shading driver (62).
3. The optical inspection system of claim 2,
the diaphragm shading driver (62) comprises a first voltage driving unit and a second voltage driving unit;
the liquid crystal diaphragm (61) is electrically connected with the first voltage driving unit and the second voltage driving unit respectively;
wherein the diameter of a light shielding surface formed by the first voltage driving unit driving the liquid crystal diaphragm (61) is 80% of the light passing diameter of the first objective lens; the diameter of a shading surface formed by the liquid crystal diaphragm (61) driven by the second voltage driving unit is 80% of the light passing diameter of the second objective lens.
4. The optical inspection system of claim 1,
the illumination light source (1) comprises an incident light source (11) and a condenser lens (12);
the condensing lens (12) is arranged between the spectroscope (21) and the incident light source (11), and the condensing lens (12) is used for converting spherical light of the incident light source (11) into planar light.
5. The optical inspection system of claim 1,
an imaging lens (22) is further arranged in the light transmission channel (2);
the imaging lens (22) is arranged between the spectroscope (21) and the detection imaging device (3), and the imaging lens (22) is used for converging surface feedback light of the semiconductor sample (41) to be detected into an imaging lens (31) of the detection imaging device (3).
6. An optical inspection system control method for controlling the optical inspection system according to any one of claims 1 to 5 to perform inspection, comprising:
receiving an optical detection request, wherein the optical detection request comprises a bright field detection request and a dark field detection request;
if the optical detection request is the dark field detection request, the shading assembly is started in response to the dark field detection request;
and imaging the semiconductor sample to be detected through the detection imaging equipment to obtain a surface detection image for dark field detection.
7. The optical detection system control method according to claim 6,
the starting of the light shield assembly in response to the dark field detection request includes:
and responding to the dark field detection request, starting a diaphragm shading driver in the shading assembly to supply power to a liquid crystal diaphragm in the shading assembly.
8. The optical detection system control method according to claim 7,
the starting of the diaphragm shading driver in the shading assembly to supply power to the liquid crystal diaphragm in the shading assembly comprises the following steps:
monitoring an objective lens switching event;
if the objective lens switching event is monitored, acquiring objective lens magnification parameters of the current switching objective lens;
mapping the objective lens magnification parameter according to the objective lens magnification parameter of the current switching objective lens to obtain the light passing diameter of the current switching objective lens;
and starting a matched voltage driving unit in the diaphragm shading driver according to the light passing diameter of the current switching objective lens so that the matched voltage driving unit can supply power to the liquid crystal diaphragm.
9. An electronic device, comprising:
a processor; and
a memory having executable code stored thereon, which when executed by the processor, causes the processor to perform the method of any one of claims 6-8.
10. A non-transitory machine-readable storage medium having stored thereon executable code, which when executed by a processor of an electronic device, causes the processor to perform the method of any one of claims 6-8.
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