CN115637417A - Method for fabricating semiconductor structure - Google Patents
Method for fabricating semiconductor structure Download PDFInfo
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- CN115637417A CN115637417A CN202111149931.4A CN202111149931A CN115637417A CN 115637417 A CN115637417 A CN 115637417A CN 202111149931 A CN202111149931 A CN 202111149931A CN 115637417 A CN115637417 A CN 115637417A
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 107
- 239000002184 metal Substances 0.000 claims abstract description 107
- 150000004767 nitrides Chemical class 0.000 claims abstract description 80
- 239000002243 precursor Substances 0.000 claims abstract description 60
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910000077 silane Inorganic materials 0.000 claims abstract description 44
- 239000002131 composite material Substances 0.000 claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000001257 hydrogen Substances 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 14
- 238000005121 nitriding Methods 0.000 claims description 12
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical class Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 8
- 238000001179 sorption measurement Methods 0.000 abstract description 4
- 238000009832 plasma treatment Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 167
- 239000000758 substrate Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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Abstract
A method of fabricating a semiconductor structure, comprising the operations of: providing a composite structure, wherein the composite structure comprises a metal layer and a first nitride layer positioned on the metal layer; performing nitridation treatment, hydrogen plasma treatment or silane precursor adsorption on the surface of the metal layer; and forming a second nitride layer to cover the first nitride layer and the surface of the metal layer. The nitridation process, the hydrogen plasma process, and the adsorption of the silane precursor may facilitate the formation of a second nitride layer having a uniform thickness.
Description
Technical Field
The present disclosure relates to a method of fabricating a semiconductor structure.
Background
In semiconductor processing, it is often necessary to form an insulating layer or passivation layer to protect the device or achieve electrical isolation. However, when the substrate to be covered by the insulating layer or the passivation layer comprises different materials, the film formation speeds of the different materials are different, which causes the problem of uneven thickness or unevenness of the insulating layer or the passivation layer. In view of the above, a new manufacturing method is needed to solve the above problems.
Disclosure of Invention
One aspect of the present disclosure is a method of fabricating a semiconductor structure, comprising the operations of: providing a composite structure, wherein the composite structure comprises a metal layer and a first nitride layer positioned on the metal layer; performing nitriding treatment on the surface of the metal layer; and forming a second nitride layer to cover the first nitride layer and the surface of the metal layer.
In some embodiments, nitriding the surface of the metal layer is performed at a temperature of about 500 ℃ to about 700 ℃.
In some embodiments, forming the second nitride layer overlying the first nitride layer and the surface of the metal layer is performed by reacting a silane precursor and a nitrogen-containing precursor.
In some embodiments, nitriding the surface of the metal layer comprises: the surface of the metal layer is treated with ammonia gas.
In some embodiments, the method of fabricating a semiconductor structure further comprises: when the surface of the metal layer is treated by ammonia gas, the ammonia gas is ionized by a radio frequency power supply.
In some embodiments, the rf power source has a power of about 50 w to about 200 w when ionizing the ammonia gas.
In some embodiments, nitriding the surface of the metal layer comprises: and ionizing nitrogen by using a radio frequency power supply, and treating the surface of the metal layer by using the ionized nitrogen.
In some embodiments, the rf power source has a power of about 50 w to about 200 w when ionizing the nitrogen gas.
In some embodiments, ionizing nitrogen with a radio frequency power source is performed at a temperature of about 500 ℃ to about 700 ℃.
Another aspect of the present disclosure is a method of fabricating a semiconductor structure, comprising the operations of: providing a composite structure, wherein the composite structure comprises a metal layer and a first nitride layer positioned on the metal layer; treating the surface of the metal layer with hydrogen plasma; and forming a second nitride layer to cover the first nitride layer and the surface of the metal layer.
In some embodiments, a method of fabricating a semiconductor structure, further comprises: the hydrogen is ionized to form a hydrogen plasma with a radio frequency power source having a power of about 50 watts to about 200 watts.
In some embodiments, ionizing the hydrogen gas with the radio frequency power source is performed at a temperature of about 500 ℃ to about 700 ℃.
Another aspect of the present disclosure is a method of fabricating a semiconductor structure, comprising the operations of: providing a composite structure, wherein the composite structure comprises a metal layer and a nitride layer positioned on the metal layer; treating the metal layer with a first silane precursor, wherein the first silane precursor is adsorbed on the surface of the metal layer; and adding a second silane precursor and a nitrogen-containing precursor, and reacting the first silane precursor, the second silane precursor and the nitrogen-containing precursor to form a silicon nitride layer covering the surfaces of the nitride layer and the metal layer, wherein the first silane precursor and the second silane precursor are the same.
In some embodiments, the first silane precursor and the second silane precursor are dichlorosilanes.
In some embodiments, treating the metal layer with the first silane precursor is performed at a temperature of about 500 ℃ to about 700 ℃.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are intended to provide further explanation of the present disclosure as claimed.
Drawings
The foregoing and other aspects, features, and advantages of the present disclosure will become more apparent upon consideration of the following detailed description, taken in conjunction with the accompanying drawings, in which:
fig. 1-6 are cross-sectional views of a semiconductor structure at various stages of processing, according to various embodiments of the present disclosure.
Detailed Description
In the following description, numerous implementation details are set forth in order to provide a thorough understanding of the present disclosure. It should be understood, however, that these implementation details are not to be interpreted as limiting the disclosure. That is, in some embodiments of the disclosure, such implementation details are not necessary. In addition, some conventional structures and elements are shown in simplified schematic form in the drawings.
In this context, a range denoted by "a numerical value to another numerical value" is a general expression avoiding a recitation of all numerical values in the range in the specification. Thus, recitation of a range of values herein is intended to encompass any value within the range and any smaller range defined by any value within the range, as if the range and smaller range were explicitly recited in the specification.
Although the methods disclosed herein are illustrated below as a series of acts or steps, the order in which the acts or steps are presented should not be construed as a limitation of the present disclosure. For example, certain operations or steps may be performed in a different order and/or concurrently with other steps. Moreover, not all illustrated operations, steps, and/or features may be required to implement an embodiment of the present disclosure. Further, each operation or step described herein may include several sub-steps or actions.
The present disclosure provides a method of fabricating a semiconductor structure. Referring to fig. 1-2, fig. 1-2 are cross-sectional views of a semiconductor structure at various stages of processing according to various embodiments of the present disclosure.
As shown in fig. 1, a composite structure 110 disposed on a substrate 100 is provided, wherein the composite structure 110 includes a metal layer 112 and a first nitride layer 114 disposed on the metal layer 112. The surface of the metal layer 112 is subjected to nitriding treatment to form a treated metal layer 112A as shown in fig. 2. A second nitride layer 210 is formed overlying the surface of the composite structure 110A and the substrate 100 to form the semiconductor structure 200, wherein the composite structure 110A includes the first nitride layer 114 and the processed metal layer 112A.
Referring back to fig. 1, the side surface of the composite structure 110 includes the sidewall of the metal layer 112 and the sidewall of the first nitride layer 114. In other words, the side is a heterogeneous surface containing different materials. If a nitride layer is directly formed on the heterogeneous surface, the nitride layer tends to have uneven thickness or unevenness. For example, the thickness of the nitride layer formed on the metal layer 112 is smaller than the thickness of the nitride layer formed on the first nitride layer 114. Before forming the second nitride layer 210, the method for fabricating a semiconductor structure of the present disclosure performs a nitridation process on the surface of the metal layer 112, so that the surface layer of the metal layer 112 is nitrided to have a functional group containing nitrogen, such as an amino group (-NH) 2 ) Thereby forming a processed metal layer 112A. The surface properties of the processed metal layer 112A are similar to those of the first nitride layer 114, so that the precursors for the subsequent formation of the second nitride layer 210 adsorb to the processed metal layer 112A and the first nitride layer 114 to a similar degree, thereby forming the second nitride layer 210 with a uniform thickness on the first nitride layer 114 and the processed metal layer 112A. By the method for manufacturing the semiconductor structure, the problem of uneven film thickness formed on a heterogeneous surface can be solved.
In some embodiments, nitriding the surface of metal layer 112 is performed at a temperature of about 500 ℃ to about 700 ℃. For example 525, 550, 575, 600, 625, 650, 675, or 700 ℃. When the temperature is within a range from about 500 ℃ to about 700 ℃, the surface of the processed metal layer 112A can have a sufficient nitridation degree, so as to form the second nitride layer 210 with a uniform thickness later, and prevent the resistance of the processed metal layer 112A from being too high to affect the device performance.
In some embodiments, forming the second nitride layer 210 to cover the surface of the first nitride layer 114 and the metal layer 112A is performed by reacting a silane precursor and a nitrogen-containing precursor. For example, the silane precursor is Dichlorosilane (DCS). For example, the nitrogen-containing precursor is ammonia gas. The second nitride layer 210 is a silicon nitride (SiN) layer. In some embodiments, the second nitride layer 210 is formed by Atomic Layer Deposition (ALD), plasma-enhanced atomic layer deposition (PEALD), physical Vapor Deposition (PVD), or Chemical Vapor Deposition (CVD), but is not limited thereto.
The nitridation process may be performed by using a suitable nitrogen-containing gas, such as, but not limited to, ammonia or nitrogen. In some embodiments, nitriding the surface of the metal layer 112 comprises: the surface of the metal layer 112 is treated with ammonia gas. In some embodiments, during the treatment of the metal layer 112 with ammonia gas, the metal layer 112 is treated with ammonia gas plasma by ionizing the ammonia gas with a radio frequency power source. Compared with the treatment with ammonia gas, the treatment with ammonia gas plasma can further improve the nitridation efficiency. The degree of nitridation of the metal layer 112 can be controlled by adjusting the power range of the rf power source. In some embodiments, the rf power source has a power between about 50 watts and about 200 watts. For example, 50, 75, 100, 125, 150, 175, or 200 watts. When the power is within a range from about 50 w to about 200 w, the surface of the processed metal layer 112A may have a sufficient nitridation degree to facilitate the subsequent formation of the second nitride layer 210, and prevent the resistance of the processed metal layer 112A from being too high to affect the device performance. When the power is too high, for example, in excess of about 200 watts, the conductive properties of the treated metal layer 112A may be adversely affected. In other embodiments, the metal layer 112 is treated with ammonia gas without ionizing the ammonia gas with a radio frequency power source. In some embodiments, ionizing the ammonia gas with a radio frequency power source is performed at a temperature of about 500 ℃ to about 700 ℃. For the selection and effect of temperature, please refer to the above embodiments of nitridation process, which is not described herein.
In some embodiments, nitriding the surface of the metal layer 112 comprises: the nitrogen gas is ionized by the rf power source, and the surface of the metal layer 112 is treated with the ionized nitrogen gas. In some embodiments, the rf power source has a power of about 50 w to about 200 w when ionizing the nitrogen gas. In some embodiments, ionizing nitrogen with a radio frequency power source is performed at a temperature of 500 ℃ to 700 ℃. For the selection and effect of power and temperature, please refer to the embodiments of the nitridation process and the ammonia process, which are not described herein again.
In some embodiments, the composite structure 110 is a bit line in a Dynamic Random Access Memory (DRAM). The second nitride layer 210 is a protective layer on the bit line. In some embodiments, metal layer 112 comprises any suitable conductive material, such as: tungsten (W), molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), copper (Cu), alloys, or a stack of the foregoing conductive materials, but is not limited thereto. In some embodiments, the first nitride layer 114 is a silicon nitride layer. In some embodiments, the first nitride layer 114 includes multiple nitride layers, such as a double nitride layer, a triple nitride layer, and the like.
The present disclosure provides another method of fabricating a semiconductor structure. Referring to fig. 1 and 3, fig. 1 and 3 are schematic cross-sectional views of a semiconductor structure at various stages of processing according to various embodiments of the present disclosure.
As shown in fig. 1, a composite structure 110 disposed on a substrate 100 is provided, wherein the composite structure 110 includes a metal layer 112 and a first nitride layer 114 disposed on the metal layer 112. The surface of the metal layer 112 is plasma-treated with hydrogen gas to form a treated metal layer 112B as shown in fig. 3. A second nitride layer 210 is formed overlying the surface of the composite structure 110B and the substrate 100 to form the semiconductor structure 300, wherein the composite structure 110B includes the first nitride layer 114 and the processed metal layer 112B.
Referring back to fig. 1, the side surface of the composite structure 110 includes the sidewall of the metal layer 112 and the sidewall of the first nitride layer 114. In other words, the side is a heterogeneous surface containing different materials. If a nitride layer is directly formed on the heterogeneous surface, the nitride layer tends to have uneven thickness or unevenness. The method of fabricating a semiconductor structure of the present disclosure forms a treated metal layer 112B by treating the surface of the metal layer 112 with ionized hydrogen gas before forming the second nitride layer 210. The surface properties of the processed metal layer 112B may become similar to those of the first nitride layer 114, so that the precursors for the subsequent formation of the second nitride layer 210 may adsorb to the processed metal layer 112B and the first nitride layer 114 to a similar degree, thereby forming the second nitride layer 210 with a uniform thickness on the first nitride layer 114 and the processed metal layer 112B. By the method for manufacturing the semiconductor structure, the problem of uneven film thickness formed on a heterogeneous surface can be solved.
In some embodiments, hydrogen is ionized to form a hydrogen plasma with an rf power source having a power between about 50 watts and about 200 watts. For example, 50, 75, 100, 125, 150, 175, or 200 watts. In some embodiments, ionizing the hydrogen gas with the radio frequency power source is performed at a temperature of about 500 ℃ to about 700 ℃. For example 525, 550, 575, 600, 625, 650, 675, or 700 ℃. When the power or temperature falls within the aforementioned range, the processed metal layer 112B may also facilitate the subsequent formation of the second nitride layer 210 with a uniform thickness while substantially maintaining the original conductive characteristics. When the power is too high, for example, in excess of about 200 watts, the conductive properties of the treated metal layer 112B may be adversely affected.
The present disclosure provides another method of fabricating a semiconductor structure. Referring to fig. 4-6, fig. 4-6 are cross-sectional views of a semiconductor structure at various stages of processing according to various embodiments of the present disclosure.
As shown in fig. 4, a composite structure 410 disposed on the substrate 100 is provided, wherein the composite structure 410 includes a metal layer 112 and a nitride layer 116 disposed on the metal layer 112. As shown in fig. 5, the metal layer is treated with a first silane precursor 510, and the first silane precursor 510 is adsorbed on the surface of the nitride layer 116 and the metal layer 112. A second silane precursor and a nitrogen-containing precursor (not shown) are added and the first silane precursor 510, the second silane precursor and the nitrogen-containing precursor are reacted, as shown in fig. 6, to form a silicon nitride layer 610 covering the surface of the nitride layer 116 and the metal layer 112, wherein the first silane precursor 510 and the second silane precursor are the same. In some embodiments, the first silane precursor and the second silane precursor are dichlorosilanes. In some embodiments, the nitrogen-containing precursor is ammonia. In some embodiments, the first silane precursor 510 is loaded into a buffer tank (buffer tank) and sprayed into the chamber where the composite structure 410 is located, where it is adsorbed on the surface of the nitride layer 116 and the metal layer 112.
Referring again to fig. 5, the side surfaces of the composite structure 410 include the side walls of the metal layer 112 and the side walls of the nitride layer 116. In other words, the side is a heterogeneous surface containing different materials. If a nitride layer is directly formed on the heterogeneous surface, the nitride layer tends to have uneven thickness or unevenness. For example, when a silane precursor is reacted with a nitrogen-containing precursor to form a nitride layer, the metal layer 112 may have poor adsorption of the silane precursor, and thus the nitride layer formed on the metal layer 112 may be less thick than the nitride layer formed on the nitride layer 116. Before the silicon nitride layer 610 is formed, the first silane precursor 510 is introduced to adsorb the first silane precursor 510 on the surface of the metal layer 112, so that when the silicon nitride layer 610 is formed subsequently, enough silane precursor on the surface of the metal layer 112 can react with the nitrogen-containing precursor to form the silicon nitride layer 610 with uniform thickness. By the method for manufacturing the semiconductor structure, the problem of uneven film thickness formed on a heterogeneous surface can be solved.
In some embodiments, treating metal layer 112 with first silane precursor 510 is performed at a temperature of about 500 ℃ to about 700 ℃. For example 525, 550, 575, 600, 625, 650, 675, or 700 ℃. When the temperature is within a range from about 500 ℃ to about 700 ℃, the first silane precursor 510 may be sufficiently adsorbed on the surface of the metal layer 112 for the subsequent formation of the silicon nitride layer 610 with a uniform thickness.
The features of the present disclosure will be described more specifically below with reference to experimental examples. Although the following embodiments are described, the materials used, the amounts and ratios thereof, the details of the processes, the flow of the processes, and the like may be appropriately changed without departing from the scope of the present disclosure. Therefore, the present disclosure should not be construed restrictively by the embodiments described below.
In this example, a silicon nitride layer was formed on a silicon substrate and tungsten metal by Atomic Layer Deposition (ALD) using dichlorosilane and ammonia as precursors. Please refer to table 1 below. In the comparative example, the silicon nitride layer was formed without processing the silicon substrate and the tungsten metal before the silicon nitride layer was formed. In examples 1 to 6, before forming the silicon nitride layer, the silicon substrate and the tungsten metal were treated at a temperature of 630 ℃ under different experimental conditions, and then the silicon nitride layer was formed.
TABLE 1
As is apparent from table 1, the difference in thickness between the silicon nitride layer on the silicon substrate and the silicon nitride layer on the tungsten metal was reduced after the surface treatment, and it was found that the surface treatment was favorable for forming a silicon nitride layer having a uniform thickness.
In summary, the method for fabricating a semiconductor structure according to the present disclosure performs a nitridation process, a hydrogen plasma process, or a silane precursor adsorption process on the heterogeneous surface before forming a nitride layer on the heterogeneous surface, so as to facilitate the subsequent formation of a nitride layer with a uniform thickness.
Although the present disclosure has been described in considerable detail with reference to certain embodiments, other embodiments are possible. Therefore, the spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.
It will be apparent to those skilled in the art that various modifications and variations can be made in the structure of the present disclosure without departing from the scope or spirit of the disclosure. In view of the foregoing, it is intended that the present disclosure cover modifications and variations of this disclosure that fall within the scope of the appended claims.
[ notation ] to show
100 substrate
110. 110A, 110B, 410 composite structure
112 metal layer
112A, 112B treated Metal layer
114 first nitride layer
116 nitride layer
200. 300, 600 semiconductor structure
210 second nitride layer
510 first silane precursor
610, silicon nitride layer.
Claims (15)
1. A method of fabricating a semiconductor structure, comprising:
providing a composite structure, wherein the composite structure comprises a metal layer and a first nitride layer positioned on the metal layer;
nitriding the surface of the metal layer; and
forming a second nitride layer covering the first nitride layer and the surface of the metal layer.
2. The method of claim 1, wherein the nitriding the surface of the metal layer is performed at a temperature of about 500 ℃ to about 700 ℃.
3. The method of claim 1, wherein forming the second nitride layer overlying the first nitride layer and the surface of the metal layer is performed by reacting a silane precursor and a nitrogen-containing precursor.
4. The method of claim 1, wherein the nitriding the surface of the metal layer comprises: treating the surface of the metal layer with ammonia gas.
5. The method of claim 4, further comprising: when the surface of the metal layer is treated by ammonia gas, the ammonia gas is ionized by a radio frequency power supply.
6. The method of claim 5, wherein the RF power source has a power between about 50W and about 200W when ionizing the ammonia gas with the RF power source.
7. The method of claim 1, wherein the nitriding the surface of the metal layer comprises: ionizing nitrogen gas by a radio frequency power supply, and treating the surface of the metal layer by the ionized nitrogen gas.
8. The method of claim 7, wherein the RF power source has a power of about 50W to about 200W when ionizing the nitrogen gas.
9. The method of claim 7, wherein ionizing nitrogen with the rf power source is performed at a temperature of about 500 ℃ to about 700 ℃.
10. A method of fabricating a semiconductor structure, comprising:
providing a composite structure, wherein the composite structure comprises a metal layer and a first nitride layer positioned on the metal layer;
treating the surface of the metal layer with hydrogen plasma; and
forming a second nitride layer covering the first nitride layer and the surface of the metal layer.
11. The method of claim 10, further comprising: the hydrogen plasma is formed by ionizing hydrogen gas with a radio frequency power source having a power of about 50 watts to about 200 watts.
12. The method of claim 11, wherein ionizing hydrogen with the rf power source is performed at a temperature of about 500 ℃ to about 700 ℃.
13. A method of fabricating a semiconductor structure, comprising:
providing a composite structure, wherein the composite structure comprises a metal layer and a nitride layer positioned on the metal layer;
treating the metal layer with a first silane precursor, the first silane precursor being adsorbed on the surface of the metal layer; and
adding a second silane precursor and a nitrogen-containing precursor, and reacting the first silane precursor, the second silane precursor and the nitrogen-containing precursor to form a silicon nitride layer covering the nitride layer and the surface of the metal layer, wherein the first silane precursor and the second silane precursor are the same.
14. The method of claim 13, wherein the first and second silane precursors are dichlorosilanes.
15. The method of claim 13, wherein treating the metal layer with the first silane precursor is performed at a temperature of about 500 ℃ to about 700 ℃.
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| TWI809454B (en) | 2023-07-21 |
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