CN115627166B - Quantum dot, preparation method thereof and electroluminescent device - Google Patents
Quantum dot, preparation method thereof and electroluminescent device Download PDFInfo
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- CN115627166B CN115627166B CN202211187834.9A CN202211187834A CN115627166B CN 115627166 B CN115627166 B CN 115627166B CN 202211187834 A CN202211187834 A CN 202211187834A CN 115627166 B CN115627166 B CN 115627166B
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 108
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000010410 layer Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000012792 core layer Substances 0.000 claims abstract description 15
- 239000000243 solution Substances 0.000 claims description 37
- 238000006243 chemical reaction Methods 0.000 claims description 25
- 238000009849 vacuum degassing Methods 0.000 claims description 16
- 239000011701 zinc Substances 0.000 claims description 10
- 230000005525 hole transport Effects 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 6
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 6
- VNDYJBBGRKZCSX-UHFFFAOYSA-L zinc bromide Chemical compound Br[Zn]Br VNDYJBBGRKZCSX-UHFFFAOYSA-L 0.000 claims description 6
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 6
- UAYWVJHJZHQCIE-UHFFFAOYSA-L zinc iodide Chemical compound I[Zn]I UAYWVJHJZHQCIE-UHFFFAOYSA-L 0.000 claims description 6
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 6
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 5
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 claims description 5
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 claims description 5
- 230000035484 reaction time Effects 0.000 claims description 5
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 claims description 5
- 229940071536 silver acetate Drugs 0.000 claims description 5
- 239000004246 zinc acetate Substances 0.000 claims description 5
- ZVYYAYJIGYODSD-LNTINUHCSA-K (z)-4-bis[[(z)-4-oxopent-2-en-2-yl]oxy]gallanyloxypent-3-en-2-one Chemical compound [Ga+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O ZVYYAYJIGYODSD-LNTINUHCSA-K 0.000 claims description 3
- YAJYJWXEWKRTPO-UHFFFAOYSA-N 2,3,3,4,4,5-hexamethylhexane-2-thiol Chemical compound CC(C)C(C)(C)C(C)(C)C(C)(C)S YAJYJWXEWKRTPO-UHFFFAOYSA-N 0.000 claims description 3
- QZLAEIZEPJAELS-UHFFFAOYSA-N 2,4,4-trimethylpentane-2-thiol Chemical compound CC(C)(C)CC(C)(C)S QZLAEIZEPJAELS-UHFFFAOYSA-N 0.000 claims description 3
- JKFYKCYQEWQPTM-UHFFFAOYSA-N 2-azaniumyl-2-(4-fluorophenyl)acetate Chemical compound OC(=O)C(N)C1=CC=C(F)C=C1 JKFYKCYQEWQPTM-UHFFFAOYSA-N 0.000 claims description 3
- 229910021607 Silver chloride Inorganic materials 0.000 claims description 3
- 229910021612 Silver iodide Inorganic materials 0.000 claims description 3
- FYWVTSQYJIPZLW-UHFFFAOYSA-K diacetyloxygallanyl acetate Chemical compound [Ga+3].CC([O-])=O.CC([O-])=O.CC([O-])=O FYWVTSQYJIPZLW-UHFFFAOYSA-K 0.000 claims description 3
- 229940044658 gallium nitrate Drugs 0.000 claims description 3
- KZCOBXFFBQJQHH-UHFFFAOYSA-N octane-1-thiol Chemical compound CCCCCCCCS KZCOBXFFBQJQHH-UHFFFAOYSA-N 0.000 claims description 3
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 claims description 3
- 229940045105 silver iodide Drugs 0.000 claims description 3
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 claims description 3
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 3
- 229940102001 zinc bromide Drugs 0.000 claims description 3
- 239000011592 zinc chloride Substances 0.000 claims description 3
- 235000005074 zinc chloride Nutrition 0.000 claims description 3
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 claims description 3
- 229910000373 gallium sulfate Inorganic materials 0.000 claims description 2
- SBDRYJMIQMDXRH-UHFFFAOYSA-N gallium;sulfuric acid Chemical compound [Ga].OS(O)(=O)=O SBDRYJMIQMDXRH-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 16
- 239000011259 mixed solution Substances 0.000 description 17
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 9
- 238000000137 annealing Methods 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- 239000012300 argon atmosphere Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000011258 core-shell material Substances 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 3
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000002189 fluorescence spectrum Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000090 biomarker Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 231100000683 possible toxicity Toxicity 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004054 semiconductor nanocrystal Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 1
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/62—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
- C09K11/621—Chalcogenides
- C09K11/623—Chalcogenides with zinc or cadmium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
Abstract
The invention relates to the technical field of materials, in particular to a quantum dot, a preparation method thereof and an electroluminescent device. The invention provides a quantum dot, which comprises a quantum dot core layer and a shell layer coated on the surface of the quantum dot core layer; the quantum dot core layer comprises AgGaS 2 The method comprises the steps of carrying out a first treatment on the surface of the The shell layer comprises ZnS. AgGaS of the invention 2 The core layer of the ZnS quantum dot comprises an I-III-VI ternary material AgGaS 2 The shell layer comprises ZnS. AgGaS 2 The ZnS quantum dot has relatively high fluorescence efficiency, and the fluorescence emission wavelength can reach the blue light range; the quantum dot luminescent layer is used for preparing the electroluminescent device, so that the prepared electroluminescent device has excellent service life and efficiency.
Description
Technical Field
The invention relates to the technical field of materials, in particular to a quantum dot, a preparation method thereof and an electroluminescent device.
Background
Quantum Dots (QDs), also known as fluorescent semiconductor nanocrystals, have significant quantum size effects, which exhibit unique electronic and optical properties, such as broad excitation spectrum, narrow emission spectrum, adjustable luminescence wavelength with size components, good light stability, etc., and have been the focus of attention due to their potential application value in the fields of illumination, display, solar energy, biological markers, etc.
At present, most people use binary quantum dots which mainly consist of semiconductor elements of groups II-VI and IV-VI, such as CdSe, cdTe, pbS and the like, and the quantum dots contain heavy metal elements such as Cd, pb and the like, so that the potential toxicity greatly limits the practical application of the quantum dots. Binary quantum dots also comprise III-V group elements, such as InP, but the preparation method is harsh, the P source toxicity is high, and the stability of the quantum dots is poor, so that the quantum dots are only in the research stage at present.
The I-III-VI group quantum dot is a quantum dot which does not contain harmful elements and heavy metals, is often a direct band gap semiconductor and has quite high light absorption coefficient, and meanwhile, the ternary material has the advantage that the binary material does not have, namely, the luminescence of the quantum dot can be regulated by changing the components of the compound.
The most studied I-III-VI ternary material at present is CuInS 2 The material has relatively high fluorescence efficiency (more than 80 percent) and has potential application in the field of photovoltaic application. However, it also has a certain limitation, because the band gap is 1.43eV, and is in the red light range, even if the band gap width is increased by doping, only the green light range can be reached, and the blue light range can not be reached.
In view of this, the present invention has been made.
Disclosure of Invention
The first object of the present invention is to provide a quantum dot which is AgGaS having a core-shell structure 2 And the ZnS quantum dot has higher fluorescence efficiency, and the fluorescence emission wavelength can reach the blue light range.
The second object of the invention is to provide a preparation method of the quantum dot, which has simple steps and high controllability.
A third object of the present invention is to provide an electroluminescent device having excellent efficiency and lifetime.
In order to achieve the above object of the present invention, the following technical solutions are specifically adopted:
the invention provides a quantum dot, which comprises a quantum dot core layer and a shell layer coated on the surface of the quantum dot core layer; the quantum dot core layer comprises AgGaS 2 The method comprises the steps of carrying out a first treatment on the surface of the The shell layer comprises ZnS.
Further, the fluorescence emission wavelength of the quantum dots is 460-480 nm.
The invention also provides a preparation method of the quantum dot, which comprises the following steps:
(A) Vacuum degassing the mixture of Ag source, ga source and S source, and reacting in inert atmosphere to obtain AgGaS 2 A quantum dot;
(B) Carrying out vacuum degassing treatment on a mixture of a Zn source, an S source and an organic solvent, and then reacting in an inert atmosphere to obtain a ZnS solution;
(C) Adding the ZnS solution to a solution containing the AgGaS 2 And (3) in the solution of the quantum dots, obtaining the quantum dots after reaction.
Further, in the step (a), the molar ratio of the Ag source, the Ga source, and the S source is 1: 5-10: 40 to 60.
Preferably, the temperature of the reaction is 295-305 ℃, and the time of the reaction is 1-5 min.
Further, in the step (B), the molar ratio of the Zn source to the S source is 1:5 to 10.
Preferably, the temperature of the reaction is 110 to 120 ℃.
Further, the temperature of the vacuum degassing treatment is 100-140 ℃.
Further, in the step (C), the reaction temperature is 230-260 ℃ and the reaction time is 2-3 hours.
Further, the Ag source includes one or more of silver acetate, silver nitrate, silver chloride, silver bromide, and silver iodide.
Preferably, the Ga source comprises one or more of gallium acetate, gallium chloride, gallium acetylacetonate, gallium sulphate and gallium nitrate.
Preferably, the S source comprises one or more of n-octanethiol, t-octanethiol, dodecanethiol, and t-dodecanethiol.
Preferably, the Zn source comprises one or more of zinc acetate, zinc nitrate, zinc stearate, zinc chloride, zinc bromide and zinc iodide.
The invention also provides an electroluminescent device comprising a quantum dot luminescent layer, wherein the quantum dot luminescent layer comprises the quantum dot or the quantum dot prepared by adopting the preparation method of the quantum dot.
Further, the electroluminescent device comprises a substrate, a hole injection layer, a hole transport layer, a quantum dot luminescent layer, an electron transport layer and a metal electrode which are sequentially contacted.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides an AgGaS 2 The ZnS quantum dot has a core-shell structure, and the core layer comprises an I-III-VI ternary material AgGaS 2 The shell layer comprises ZnS. AgGaS 2 The ZnS quantum dot has relatively high fluorescence efficiency, and the fluorescence emission wavelength can reach the blue light range; the problem that the blue light range is difficult to reach due to the narrower band gap of the I-III-VI ternary material in the prior art is solved; the quantum dot luminescent layer is used for preparing the electroluminescent device, so that the prepared electroluminescent device has excellent service life and efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a chart showing the UV-visible absorption spectrum and fluorescence spectrum of example 1 of the present invention.
Detailed Description
The technical solution of the present invention will be clearly and completely described below with reference to the specific drawings and embodiments, but it will be understood by those skilled in the art that the examples described below are some examples of the present invention, but not all examples, only for illustrating the present invention and should not be construed as limiting the scope of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
The quantum dot, the preparation method thereof and the electroluminescent device are specifically described below.
In some embodiments of the invention, a quantum dot is provided, which comprises a quantum dot core layer and a shell layer coated on the surface of the quantum dot core layer; the quantum dot core layer comprises AgGaS 2 The method comprises the steps of carrying out a first treatment on the surface of the The shell layer comprises ZnS.
The invention provides an AgGaS with a core-shell structure 2 ZnS quantum dot comprising an I-III-VI ternary AgGaS material 2 A core layer and a ZnS shell layer; agGaS 2 The ZnS quantum dot has relatively high fluorescence efficiency, and the fluorescence emission wavelength can reach the blue light range; solves the problem that the blue light range is difficult to reach due to the narrower band gap of the I-III-VI ternary material in the prior art.
In some embodiments of the invention, the fluorescent emission wavelength of the quantum dots is 460-480 nm.
In some embodiments of the invention, the fluorescent efficiency of the quantum dots is > 80%; preferably, the fluorescence efficiency of the quantum dots is 85% -90%.
In some embodiments of the present invention, a method for preparing the quantum dot is further provided, including the following steps:
(A) Vacuum degassing of mixture of Ag source, ga source and S sourceAfter treatment, agGaS is obtained after reaction under inert atmosphere 2 A quantum dot;
(B) Carrying out vacuum degassing treatment on a mixture of a Zn source, an S source and an organic solvent, and then reacting in an inert atmosphere to obtain a ZnS solution;
(C) Adding ZnS solution to AgGaS 2 And (3) in the solution of the quantum dots, obtaining the quantum dots after reaction.
In some embodiments of the invention, in step (a), the molar ratio of Ag source, ga source, and S source is 1: 5-10: 40-60; typically, but not by way of limitation, the molar ratio of Ag source, ga source and S source is 1:5: 40. 1:6: 50. 1:7: 60. 1:8: 40. 1:9:50 or 1:10:60, etc.
By adopting the feeding ratio, agGaS can be obtained 2 The nano particles are well crystallized, which is beneficial to improving the luminous performance of the quantum dots. Too little Ga will result in AgGaS 2 The wavelength of the quantum dot is relatively longer than the blue 460-480nm range, and meanwhile, too little Ga and too much Ag can quench the quantum dot, so that the fluorescence efficiency of the quantum dot is reduced; the S source is excessive, part of the S source is used for reaction, and the S source is used as a surface ligand of the quantum dot to improve the stability of the quantum dot, so that the S source cannot be exposed to the outside to cause damage to the quantum dot by water oxygen.
In some embodiments of the invention, in step (a), the temperature of the reaction is 295-305 ℃ and the time of the reaction is 1-5 min; typical, but not limiting, for example, the reaction temperature is 295 ℃, 296 ℃, 297 ℃, 298 ℃, 299 ℃, 300 ℃, 301 ℃, 302 ℃, 303 ℃, 304 ℃, 305 ℃, etc.; the reaction time is 1min, 2min, 3min, 4min or 5min, etc.
At the temperature, the components can react sufficiently to form the AgGaS containing I-III-VI material 2 And a mixed solution of ligands.
In some embodiments of the invention, in step (a), further comprising; and cooling and cleaning the mixed solution obtained after the reaction.
In some embodiments of the invention, in step (a), after the reaction is completed, the temperature of the mixed solution is reduced and a small amount of TOP (trioctylphosphine) solution is added to improve the clarity of the mixed solution; then mixing with toluene and ethanol, centrifuging, and repeating the above operation for multiple times; preferably, the rotational speed of the centrifugation is 6000 to 9000rad; the centrifugation time is 5-15 min.
In some embodiments of the invention, in step (B), the molar ratio of Zn source to S source is 1:5 to 10; typically, but not by way of limitation, the molar ratio of Zn source to S source is 1: 5. 1: 6. 1: 7. 1: 8. 1:9 or 1:10, etc.
In some embodiments of the invention, in step (B), the organic solvent comprises one or more of octadecene, oleic acid, and Trioctylphosphine Oxide (TOP). The invention does not strictly limit the organic solvent, and the organic solvent has the function of dilution.
In some embodiments of the invention, in step (B), the temperature of the reaction is from 110 to 120 ℃; preferably, the reaction time is 30 to 80 minutes.
In some embodiments of the invention, the temperature of the vacuum degassing treatment is 100-140 ℃; typical, but not limiting, for example, the temperature of the vacuum degassing process is 100 ℃, 110 ℃, 120 ℃, 130 ℃, or 140 ℃, etc.; the time of the vacuum degassing treatment may be specifically set according to the actual situation, for example, 30 minutes, 60 minutes or longer.
In the step (a) and the step (B), after the reactants are mixed in a certain molar ratio, it is necessary to perform vacuum degassing treatment for a certain time to remove water, oxygen, and the like mixed in the reaction system. The vacuum degassing treatment is carried out at the temperature, so that water, oxygen and the like mixed in the reaction system can be effectively removed.
In some embodiments of the invention, in step (C), the temperature of the reaction is between 230 and 260℃and the reaction time is between 2 and 3 hours.
ZnS in ZnS solution can be well coated on the core at the above temperature and time.
In some embodiments of the invention, in step (C), the reaction further comprises a temperature-reducing wash.
In some embodiments of the invention, agGaS is included 2 The solvent in the solution of quantum dots comprises toluene and hexaneOne or more of octane and chloroform.
In some embodiments of the invention, the Ag source comprises one or more of silver acetate, silver nitrate, silver chloride, silver bromide, and silver iodide.
In some embodiments of the invention, the Ga source comprises one or more of gallium acetate, gallium chloride, gallium acetylacetonate, gallium sulfate, and gallium nitrate.
In some embodiments of the invention, the S source comprises one or more of n-octanethiol, t-octanethiol, dodecanethiol, and t-dodecanethiol; the monomers mentioned above can be used either as S source or as ligand.
In some embodiments of the invention, the Zn source comprises one or more of zinc acetate, zinc nitrate, zinc stearate, zinc chloride, zinc bromide, and zinc iodide.
In some embodiments of the present invention, an electroluminescent device is provided, which includes a quantum dot light emitting layer, the quantum dot described above or a quantum dot manufactured by the method for manufacturing the quantum dot described above.
AgGaS employing the present invention 2 The ZnS quantum dots are used for preparing the quantum dot luminescent layer of the electroluminescent device, thereby being beneficial to improving the efficiency and prolonging the service life of the device.
In some embodiments of the invention, an electroluminescent device comprises a substrate, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer, and a metal electrode in contact in that order.
In some embodiments of the invention, the substrate comprises ITO glass.
In some embodiments of the invention, the hole injection layer comprises PEDOT: PSS.
In some embodiments of the invention, the hole transport layer comprises TFB.
In some embodiments of the invention, the electron transport layer comprises ZnO.
In some embodiments of the invention, the metal electrode comprises an Al electrode.
In some embodiments of the present invention, a method for preparing the electroluminescent device is further provided, including the following steps: coating a material of a hole injection layer on a substrate, annealing to form the hole injection layer, coating a material of a hole transport layer on the hole injection layer, annealing to form a hole transport layer, coating a material of a quantum dot luminescent layer on the hole transport layer, coating a material of an electron transport layer on the quantum dot luminescent layer, annealing to form an electron transport layer, and depositing a metal electrode on the electron transport layer.
In some embodiments of the invention, the temperature of the annealing treatment is 80 to 150 ℃; preferably, the annealing treatment is carried out for 10 to 40 minutes.
Example 1
The AgGaS provided in this embodiment 2 The preparation method of the ZnS quantum dot comprises the following steps:
(A) Mixing 1mmol of silver acetate, 6mmol of gallium chloride and 10ml of dodecyl mercaptan to obtain a mixed solution, heating the mixed solution to 100 ℃, carrying out vacuum degassing treatment at 100 ℃ for 30min, then continuously heating the mixed solution to 300 ℃ for reaction for 1min under the argon atmosphere, cooling and cleaning to obtain AgGaS 2 Adding quantum dots into toluene solution to obtain AgGaS-containing solution 2 A solution of quantum dots;
(B) Mixing 8mmol of zinc acetate, 16ml of dodecathiol and 20ml of octadecene to obtain a mixed solution, heating the mixed solution to 100 ℃, carrying out vacuum degassing treatment at 100 ℃ for 30min, and then continuously heating the solution to 120 ℃ for reaction for 30min under the argon atmosphere to obtain a ZnS solution;
(C) Dropwise adding ZnS solution to the AgGaS solution by a syringe pump 2 In the solution of the quantum dots, the mixed solution is heated to 240 ℃ to react for 2 hours, and then cooled and cleaned to obtain AgGaS 2 ZnS quantum dots.
Example 2
The AgGaS provided in this embodiment 2 The preparation method of the ZnS quantum dot comprises the following steps:
(A) Mixing 1mmol of silver acetate, 6mmol of gallium chloride and 15ml of dodecyl mercaptan to obtain a mixed solution, heating the mixed solution to 140 ℃ and heating the mixed solution at 1 DEG CVacuum degassing at 40deg.C for 30min, heating the mixed solution to 295 deg.C under argon atmosphere for 2min, cooling, and cleaning to obtain AgGaS 2 Quantum dots, then AgGaS 2 Adding quantum dots into toluene solution to obtain AgGaS-containing solution 2 A solution of quantum dots;
(B) Mixing 16mmol of zinc acetate, 10ml of dodecathiol and 20ml of octadecene to obtain a mixed solution, heating the mixed solution to 130 ℃, carrying out vacuum degassing treatment at 140 ℃ for 30min, and then continuously heating the solution to 120 ℃ for reaction for 30min under argon atmosphere to obtain a ZnS solution;
(C) Dropwise adding ZnS solution to the AgGaS solution by a syringe pump 2 In the solution of the quantum dots, the mixed solution is heated to 260 ℃ to react for 2.5 hours, and then cooled and cleaned to obtain AgGaS 2 ZnS quantum dots.
Example 3
The preparation method of the electroluminescent device provided by the embodiment comprises the following steps:
the ITO substrate is sequentially cleaned by glass cleaning agent, deionized water, ethanol, acetone and isopropanol, then is subjected to ultraviolet ozone treatment for 5min, then is spin-coated with a PEDOT with the concentration of 30mg/mL and an aqueous solution of PSS on the cleaned ITO substrate at the rotating speed of 3000rpm/min for 30s, and is annealed at 140 ℃ for 30min to form the PEDOT with the thickness of 100nm and the PSS film. Then spin-coating chloroform solution of TFB with concentration of 8mg/mL on PEDOT: PSS film at 2000rpm/min for 30s, annealing at 120deg.C for 20min to form 80nm film, and spin-coating AgGaS with concentration of 15mg/mLd on the film at 4000rpm/min 2 And (3) forming a quantum dot film with the thickness of 30nm by adopting the n-octane solution of ZnS quantum dots for 45 s. Spin-coating ethanol solution of ZnO with the concentration of 60mg/mL on the treated quantum dot film at 4000rpm/min and 1500rpm/min respectively for 30s, and annealing at 80 ℃ for 30min to obtain a ZnO film with the thickness of 50 nm; and finally, depositing a metal Al electrode on the ZnO film. Wherein AgGaS 2 The ZnS quantum dots were AgGaS prepared in example 1 2 ZnS quantum dots.
Test example 1
For AgGaS prepared in example 1 2 The ZnS quantum dots were subjected to uv-vis absorption spectrum and fluorescence spectrum tests, the results of which are shown in fig. 1, and quantum dot efficiency was tested by a relative method.
AgGaS 2 The fluorescence emission wavelength of the ZnS quantum dot is 480nm, and the fluorescence efficiency is 85%.
The electroluminescent device prepared in example 3 was tested for lifetime and efficiency in a marine optical EQE test system. EQE represents the ratio of photons obtained by internal electron-hole recombination to the total number of photons incident. T95 represents the time required for the device to decay as the device brightness drops from the peak to 95% thereof.
The electroluminescent device EQE of embodiment 3 of the present invention is 3% and T95 is 50h.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (9)
1. The preparation method of the quantum dot is characterized by comprising the following steps of:
(A) Vacuum degassing the mixture of Ag source, ga source and S source, and reacting in inert atmosphere to obtain AgGaS 2 A quantum dot;
(B) Carrying out vacuum degassing treatment on a mixture of a Zn source, an S source and an organic solvent, and then reacting in an inert atmosphere to obtain a ZnS solution;
(C) Adding the ZnS solution to a solution containing the AgGaS 2 The quantum dots are obtained after reaction in the solution of the quantum dots;
in step (a), the molar ratio of the Ag source, the Ga source, and the S source is 1: 5-10: 40-60;
in the step (B), the molar ratio of the Zn source to the S source is 1:5 to 10;
in the step (C), the reaction temperature is 230-260 ℃ and the reaction time is 2-3 hours;
the S source comprises one or more of n-octyl mercaptan, tert-octyl mercaptan, dodecyl mercaptan and tert-dodecyl mercaptan;
the Zn source comprises one or more of zinc acetate, zinc nitrate, zinc stearate, zinc chloride, zinc bromide and zinc iodide;
the quantum dot comprises a quantum dot core layer and a shell layer coated on the surface of the quantum dot core layer; the quantum dot core layer comprises AgGaS 2 The method comprises the steps of carrying out a first treatment on the surface of the The shell layer comprises ZnS.
2. The method for preparing the quantum dot according to claim 1, wherein the fluorescence emission wavelength of the quantum dot is 460-480 nm.
3. The method of claim 1, wherein in the step (a), the reaction is performed at 295 to 305 ℃ for 1 to 5 minutes.
4. The method of claim 1, wherein in step (B), the reaction temperature is 110 to 120 ℃.
5. The method for preparing quantum dots according to claim 1, wherein the temperature of the vacuum degassing treatment is 100-140 ℃.
6. The method of claim 1, wherein the Ag source comprises one or more of silver acetate, silver nitrate, silver chloride, silver bromide, and silver iodide.
7. The method of claim 1, wherein the Ga source comprises one or more of gallium acetate, gallium chloride, gallium acetylacetonate, gallium sulfate, and gallium nitrate.
8. An electroluminescent device comprising a quantum dot light-emitting layer comprising quantum dots produced by the method of producing quantum dots according to any one of claims 1 to 7.
9. The electroluminescent device of claim 8, comprising a substrate, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer, and a metal electrode in contact in that order.
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