CN115621830A - Optical modulator, preparation method thereof and laser - Google Patents

Optical modulator, preparation method thereof and laser Download PDF

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Publication number
CN115621830A
CN115621830A CN202211398565.0A CN202211398565A CN115621830A CN 115621830 A CN115621830 A CN 115621830A CN 202211398565 A CN202211398565 A CN 202211398565A CN 115621830 A CN115621830 A CN 115621830A
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China
Prior art keywords
film
optical modulator
laser
zrc
reflection mirror
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Inventor
王江
程光华
张国栋
李学龙
孙哲
吕静
解亮
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Northwestern Polytechnical University
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Northwestern Polytechnical University
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Priority to CN202211398565.0A priority Critical patent/CN115621830A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0619—Coatings, e.g. AR, HR, passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Optical Elements Other Than Lenses (AREA)

Abstract

The invention provides an optical modulator, a preparation method thereof and a laser, belonging to the technical field of optical devices. The ZrC film is plated on the surface of the high-reflection mirror to form the reflection-type broadband optical modulator, the reflection-type broadband optical modulator can be applied to a laser, the unique nonlinear optical characteristic of the ZrC film is utilized, compared with the existing optical modulator, the optical modulator has a higher damage threshold, and the damage rate of the optical modulator is reduced.

Description

Optical modulator, preparation method thereof and laser
Technical Field
The invention belongs to the technical field of optical devices, and relates to a high-reflection mirror and an application technology thereof, in particular to an optical modulator, a preparation method thereof and a laser.
Background
The optical modulator is a core device for converting continuous laser into short pulse laser in a laser, and is a key device for realizing the short pulse passive laser with simple structure, ultrafast pulse, ultrahigh energy, ultralow cost and ultralong service life. The laser passive mode locking technology and the laser passive Q-switching technology of the optical modulator based on the saturable absorption characteristic are main technologies for realizing a high-power ultrashort pulse laser, and the technology is used for realizing pulse laser output by utilizing the modulation of the optical modulator in a laser cavity on optical pulses. With the rapid development of passive mode-locking and Q-switching lasers, optical modulators based on different materials are also subjected to selection of superior and inferior choices and serve as an optical modulator with excellent performance, the key requirements on the materials are good stability, quick response time, wide wavelength range, low optical loss, high optical damage threshold, low cost and easy integration into a laser system, and optical modulators made of partial materials are gradually mature in the development process so far, such as semiconductor saturable absorbers, gallium arsenide and Cr 4+ YAG crystal, etc. However, only semiconductor saturable absorbers in these saturable absorber devices can realize passively mode-locked solid-state lasers, and still have the disadvantages of low damage threshold, narrow wavelength band, and limited response time. Therefore, development of high-performance light modulation devices has been reluctant. In recent years, with the continuous emergence of various novel two-dimensional materials (such as graphene, graphene oxide, topological insulators, transition metal sulfides, black phosphorus and the like) and the rapid development of ultrafast laser technology, how to prepare novel, broadband, high-damage-threshold and low-loss optical modulation devices has become a key technology for developing lasers. These two-dimensional materials are inexpensive, simple to fabricate, and have superior nonlinear optical response over a wide range of wavelengths from ultraviolet to infrared, as compared to conventional semiconductor saturable absorbers. However, two-dimensional material based optical modulators are excited in solid-state mode lockingOptical modulators have been rarely reported because the instability of the two-dimensional material itself causes the damage threshold of the novel broadband optical modulator to be low, and the immature manufacturing process also causes the insertion loss of the device to be too large, which hinders the application of the novel two-dimensional material optical modulator in high-power solid-state pulse lasers.
MXene is a transition metal carbide and a transition metal oxide, belonging to a two-dimensional material, which has found many uses due to its excellent mechanical properties, abundant surface chemical properties, high electrical conductivity and excellent photoelectric effect, such as: electromagnetic shielding, electrochemical energy storage, optical modulator, biomedical separation sensor, seawater desalination and the like.
Zirconium carbide (ZrC) is a representative of the MXene family, and has the characteristics of high melting point, high hardness, high chemical properties, good thermal stability, good electrical conductivity, and the like. The method can be used in a plurality of fields such as emitter shell coating, nuclear fuel particle coating, thermal photoelectric radiator coating, ultra-high temperature material and the like. It is considered a promising candidate for the core material of fourth generation nuclear reactor systems and hypersonic spacecraft. ZrC also has many excellent electronic properties. With Ti 3 C 2 Tx、Mo 2 Compared with other MXene family materials such as C and the like, zrC is more stable in air and is not easy to be oxidized.
Due to the excellent performance of ZrC, the optical modulator based on ZrC is presumed to have a broadband nonlinear optical response, and the market application prospect of the optical modulator is predicted to be wide, but the current report of the optical modulator based on ZrC is less, and particularly the report of the optical modulator based on ZrC is less under the common laser wavelength of 1.06 mu m.
Disclosure of Invention
Aiming at the problems that reports are less based on ZrC as an optical modulator, and particularly the reports are less at the common laser wavelength of 1.06 mu m, the invention provides the optical modulator, a preparation method thereof and a laser.
The ZrC film is plated on the surface of the high-reflection mirror to form the optical modulator, the optical modulator is applied to the laser, the ZrC film is applied under the laser wavelength of 1.06 mu m, the ultrashort wave laser is formed, the emission of shorter laser pulses in the laser is realized, and the damage threshold is higher; the specific technical scheme is as follows:
the optical modulator comprises a high-reflection mirror and a ZrC film plated on the surface of the high-reflection mirror.
The high-reflection mirror comprises a high-reflection mirror body, a silver film plated on the surface of the high-reflection mirror body and a silicon dioxide film plated on the surface of the silver film, wherein the ZrC film is plated on the surface of the silicon dioxide film.
Further defined, the thickness of the ZrC film is 30nm-150nm.
The preparation method for forming the optical modulator comprises the following steps: plating a ZrC film on the surface of the high-reflection mirror by utilizing a magnetron sputtering coating process under the conditions that the sputtering power is 80W-120W, the pressure is 0.9Pa-1.1Pa, the bias voltage is 30V, the rotating speed of a substrate table is 4rpm-6rpm, the heating temperature of the substrate is 0 ℃ to 200 ℃, the argon flow is 25ml/min-30ml/min and the sputtering time is 3min-10min, and forming the optical modulator.
Further limited, the steps are: and plating a ZrC film on the surface of the high-reflection mirror by utilizing a magnetron sputtering coating process under the conditions that the sputtering power is 100W, the pressure is 1Pa, the bias voltage is 30V, the rotating speed of a substrate table is 5rpm, the heating temperature of the substrate is 200 ℃, the argon flow is 30ml/min and the sputtering time is 5min to form the optical modulator.
The preparation method for forming the optical modulator comprises the following steps:
1) Based on the electron beam evaporation principle, respectively plating a silver film with the thickness of 140nm-220nm on the surface of the high-reflection mirror body and plating a silicon dioxide film with the thickness of 20nm-40nm on the surface of the silver film;
2) Plating a ZrC film on the surface of the silicon dioxide film by utilizing a magnetron sputtering coating process under the conditions that the sputtering power is 80W-120W, the pressure is 0.9Pa-1.1Pa, the bias voltage is 30V, the rotating speed of a substrate table is 4rpm-6rpm, the heating temperature of the substrate is 0 ℃ to 200 ℃, the argon flow is 25ml/min-30ml/min and the sputtering time is 3min-10min, thereby forming the optical modulator.
In a further definition of the method,
the step 1) is specifically as follows: based on the electron beam evaporation principle, respectively plating a silver film with the thickness of 180nm on the surface of the high-reflection mirror body and plating a silicon dioxide film with the thickness of 20nm on the surface of the silver film;
the step 2) is specifically as follows: and plating a ZrC film on the surface of the silicon dioxide film by utilizing a magnetron sputtering coating process under the conditions that the sputtering power is 100W, the pressure is 1Pa, the bias voltage is 30V, the rotating speed of a substrate table is 5rpm, the heating temperature of the substrate is 200 ℃, the argon flow is 30ml/min and the sputtering time is 5min to form the optical modulator.
A laser mounted with the above optical modulator.
The laser device is further limited to comprise a pumping source, a collimation focusing mirror, a gain medium, an output mirror and an optical modulator, wherein the pumping source is connected with the collimation focusing mirror, the gain medium and the output mirror are sequentially arranged from front to back along the emitting direction of laser, and the optical modulator and the output mirror are arranged on the same optical axis.
Further, the pump source is connected with the incident end of the collimating focusing lens through an optical fiber.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention provides a new laser capable of generating common laser wavelength of 1.06 mu m, and forms a new invention concept by changing the coating material of a high reflecting mirror.
2. The ZrC film is plated on the surface of the high-reflection mirror to form the reflection-type broadband optical modulator, the reflection-type broadband optical modulator can be applied to a laser, and the unique nonlinear optical characteristic of the ZrC film is utilized to enable the optical modulator to have a higher damage threshold value, compared with the existing optical modulator, the damage threshold value of the optical modulator is improved by 500 times, and the damage rate of the optical modulator is reduced.
3. The optical modulator is applied to a laser, a solid state modulation laser with the wavelength of 1.06 mu m is formed, the pulse width emitted by the solid state modulation laser is less than 100ns (subnanosecond), and subnanoscale pulse laser output is formed; the pulse width of the laser made of other two-dimensional materials is generally larger than 200ns, so that the laser can emit laser with narrower pulse width compared with the laser made of other two-dimensional materials.
4. According to the invention, the silver film and the silicon dioxide film are plated between the surface of the high-reflectivity mirror and the ZrC film, and the silicon dioxide film can prevent the silver film from being oxidized due to exposure in air, so that the nonlinear effect of the silver film in laser can be avoided; the silver film may improve the reflectivity of the high reflectance mirror.
5. The method utilizes the magnetron sputtering technology and optimizes the condition parameters of magnetron sputtering, so that the surface of the plated ZrC film is uniform, the structure is compact, the crystallinity is high, and the light loss caused by material absorption is reduced.
6. Compared with a continuous wave laser source, the laser provided by the invention adopts 1kHz pulse repetition as pump light to reduce the heat effect of the film, thereby obtaining a short pulse laser.
Drawings
FIG. 1 is a schematic diagram of a light modulator according to the present invention;
FIG. 2 is a schematic diagram of a laser according to the present invention;
FIG. 3 shows the damage points of the ZrC film on the surface of the material under different energy densities; wherein a is the damage point of the surface of the material under three energy densities of the ZrC film, b is the enlarged view of the damage point of the energy density of 7.8288 muJ in a, c is the enlarged view of the damage point of the energy density of 0.9504 muJ in a, and d is the enlarged view of the damage point of the energy density of 0.7425 muJ in a;
fig. 4 is a damage threshold for a maximum energy density material with a damage probability of zero.
Wherein, 1-high reflection mirror, 2-ZrC film, 3-pump source, 4-optical fiber, 5-collimation focusing mirror, 6-gain medium, 7-output mirror, 8-optical modulator, P 1 And P 2 All are pulsed lasers with a wavelength of 1.06 μm.
Detailed Description
The technical solutions of the present invention are further explained below with reference to the drawings and examples, but the present invention is not limited to the embodiments explained below.
Example 1
Referring to fig. 1, the optical modulator of the present embodiment includes a high-reflectance mirror 1 and a ZrC film 2 plated on a surface of the high-reflectance mirror 1. Specifically, the surface of the high-reflection mirror 1 refers to the reflecting surface of the high-reflection mirror 1, that is, the ZrC film 2 is plated on the reflecting surface of the high-reflection mirror 1, the thickness of the ZrC film 2 is 30nm to 150nm, and specifically, the thickness of the ZrC film 2 may be 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm or 150nm.
Example 2
The optical modulator of this embodiment is based on embodiment 1, and the high-reflection mirror 1 includes a high-reflection mirror body, a silver film plated on a surface of the high-reflection mirror body, and a silica film plated on a surface of the silver film, and the silver film and the silica film are sequentially disposed from inside to outside along an axial direction of the high-reflection mirror body, and a ZrC film 2 is plated on a surface of the silica film. Specifically, a silver film is plated on the reflecting surface of the high-reflection mirror body, a silicon dioxide film is plated on the surface of the silver film, a ZrC film 2 is plated on the surface of the silicon dioxide film, the thickness of the silver film is 140nm-220nm, can be 140nm, 150nm, 160nm, 170nm, 180nm, 190nm, 200nm, 210nm or 220nm, and preferably, the thickness of the silver film is 80nm; the thickness of the silicon dioxide film is 20nm-40nm, and can be 20nm, 25nm, 30nm, 35nm or 40nm, and the thickness of the silicon dioxide film is preferably 20nm. The high-reflection mirror body of the embodiment is a substrate of the high-reflection mirror 1 and is made of a quartz plate.
Example 3
The method for manufacturing the optical modulator of the present embodiment, which is formed based on the optical modulator of embodiment 1, includes the following steps: the ZrC film 2 is plated on the surface of the high reflecting mirror 1 by utilizing a magnetron sputtering coating process under the conditions that the sputtering power is 80W-120W, the pressure is 0.9Pa-1.1Pa, the bias voltage is 30V, the rotating speed of a substrate table is 4rpm-6rpm, the heating temperature of the substrate is 0 ℃ to 200 ℃, the argon flow is 25ml/min-30ml/min, and the sputtering time is 3min-10min, so that the optical modulator 8 is formed. Specifically, the sputtering power may be 80W, 90W, 100W, 110W or 120W, and preferably, the sputtering power is 80W; the pressure may be 0.9Pa, 1.0Pa or 1.1Pa, preferably, the pressure is 1.0Pa; the rotation speed of the substrate table can be 4rpm, 5rpm or 6rpm, preferably, the rotation speed of the substrate table is 5rpm, the heating temperature of the substrate is 0 ℃, 50 ℃, 100 ℃, 150 ℃ or 200 ℃, preferably, the heating temperature of the substrate is 200 ℃; the argon flow is 25ml/min, 28ml/min or 30ml/min, preferably, the argon flow is 30ml/min; the sputtering time is 3min, 5min, 7min or 10min, preferably 5min.
Specifically, under preferred conditions, the steps are: the ZrC film 2 is plated on the surface of the high-reflection mirror 1 by utilizing a magnetron sputtering coating process under the conditions that the sputtering power is 100W, the pressure is 1Pa, the bias voltage is 30V, the rotating speed of a substrate table is 5rpm, the heating temperature of the substrate is 200 ℃, the argon flow is 30ml/min and the sputtering time is 5min, so that the optical modulator 8 is formed.
Example 4
The method for manufacturing the optical modulator of the present embodiment, which is formed based on the optical modulator of embodiment 2, includes the following steps:
1) Based on the electron beam evaporation principle, respectively plating a silver film with the thickness of 140nm-220nm on the surface of the high-reflection mirror body and plating a silicon dioxide film with the thickness of 20nm-40nm on the surface of the silver film;
2) The ZrC film 2 is plated on the surface of the silicon dioxide film by utilizing a magnetron sputtering coating process under the conditions that the sputtering power is 80W-120W, the pressure is 0.9Pa-1.1Pa, the bias voltage is 30V, the rotating speed of a substrate table is 4rpm-6rpm, the heating temperature of the substrate is 0 ℃ to 200 ℃, the argon flow is 25ml/min-30ml/min, and the sputtering time is 3min-10min, so that the optical modulator 8 is formed.
Specifically, the thickness of the silver film may be 140nm, 150nm, 160nm, 170nm, 180nm, 190nm, 200nm, 210nm or 220nm, and preferably, the thickness of the silver film is 80nm; the thickness of the silicon dioxide film can be 20nm, 25nm, 30nm, 35nm or 40nm, and preferably, the thickness of the silicon dioxide film is 20nm; the sputtering power can be 80W, 90W, 100W, 110W or 120W, and preferably, the sputtering power is 80W; the pressure may be 0.9Pa, 1.0Pa or 1.1Pa, preferably, the pressure is 1.0Pa; the rotation speed of the substrate table can be 4rpm, 5rpm or 6rpm, preferably, the rotation speed of the substrate table is 5rpm, the heating temperature of the substrate is 0 ℃, 50 ℃, 100 ℃, 150 ℃ or 200 ℃, preferably, the heating temperature of the substrate is 200 ℃; the argon flow is 25ml/min, 28ml/min or 30ml/min, preferably, the argon flow is 30ml/min; the sputtering time is 3min, 5min, 7min or 10min, preferably 5min.
Specifically, under the preferable conditions, the step 1) is as follows: based on the electron beam evaporation principle, respectively plating a silver film with the thickness of 180nm on the surface of the high-reflection mirror body and plating a silicon dioxide film with the thickness of 20nm on the surface of the silver film;
specifically, under the preferable conditions, the step 2) is as follows: the ZrC film 2 is plated on the surface of the silicon dioxide film by utilizing a magnetron sputtering coating process under the conditions that the sputtering power is 100W, the pressure is 1Pa, the bias voltage is 30V, the rotating speed of a substrate table is 5rpm, the heating temperature of the substrate is 200 ℃, the argon flow is 30ml/min and the sputtering time is 5min, so that the optical modulator 8 is formed.
Example 5
Referring to fig. 2, the laser of this embodiment is provided with the optical modulator of embodiment 1 or embodiment 2, and the laser includes a pump source 3, a collimating focusing mirror 5, a gain medium 6, an output mirror 7, and an optical modulator 8, the pump source 3 is connected to the collimating focusing mirror 5, the gain medium 6, and the output mirror 7 are sequentially disposed along the emitting direction of the laser from front to back, and the optical modulator 8 and the output mirror 7 are disposed on the same optical axis. The gain medium 6 is doped Nd 3+ YVO (Nd: YVO) with the concentration of 0.5 percent 4 The crystal, the incidence end of which is plated with 808nm high-transmittance and 1064nm high-reflectance films, can form a laser oscillation cavity with the output mirror 7 (the output mirror with 808nm high-reflectance and 10%1064nm transmittance). The pump source 3 is a 808nm quasi-CW diode laser.
Preferably, the pump source 3 is connected with the incident end of the collimating focusing mirror 5 through an optical fiber 4.
The use principle of the laser of the embodiment is as follows: the pumping source 3 emits continuous laser, the laser is transmitted to the collimation focusing lens 5 through the light 4, parallel laser is focused through the collimation focusing lens 5, passes through the gain medium 6, is amplified through stimulated radiation of the gain medium 6, and then passes through the output lens 7, the gain medium 6 is doped with Nd 3+ YVO (Nd: YVO) with the concentration of 0.5 percent 4 The incidence end of the crystal is plated with a 808nm high-transmittance 1064nm high-reflectance film which can form a laser oscillation cavity with an output mirror 7 (the output mirror with 808nm high-reflectance and 1064nm 10% transmittance) to emit pulse laser P with the wavelength of 1.06 mu m 1 And P 2 And the pulse laser output with 1.06 μm wavelength of high energy and narrow pulse width is realized by optimizing and adjusting the optical modulator 8.
Through the research on the laser, the reflectivity of the laser in a laser with the wavelength of 1064nm is 98%, and through the research on the pressure distribution test of an I-sacn film, the optical modulator 8 has the nonlinear saturable absorption characteristic.
The damage threshold is an important index of the performance of the optical modulator, a damage threshold testing system is established, the damage threshold testing system is composed of a laser source and a three-dimensional electric translation table, laser is focused on the optical modulator 8 by adjusting the position of the three-dimensional electric translation table, a focusing light spot is about 13.4 micrometers, damage of different positions of the optical modulator 8 under specific energy is obtained by controlling the position of the three-dimensional electric translation table, and finally, by continuously reducing the energy density of the laser, when the probability of generating a damage point is zero, the energy density is the damage threshold of the optical modulator. As shown in fig. 3, (a) is a damage trace of a laser irradiation region obtained by a scanning electron microscope; as shown in the diagrams (b), (c) and (d), which are three damage points on the surface of the material under different energy densities, respectively, and referring to fig. 4, the probability of generating damage points under different energy densities is obtained, and the damage threshold of the material under the laser parameter is F:251.6mJ/cm 2 ～263.3mJ/cm 2 Compared with a mature semiconductor saturable absorption mirror (500 muJ/cm < 2 >), the optical modulator 8 prepared by the coating reflecting mirror of the application has a very high damage threshold value, and the damage rate of the optical modulator 8 is reduced.

Claims (10)

1. The optical modulator is characterized by comprising a high-reflection mirror (1) and a ZrC film (2) plated on the surface of the high-reflection mirror (1).
2. A light modulator according to claim 1, wherein the high-reflection mirror (1) comprises a high-reflection mirror body, a silver film plated on a surface of the high-reflection mirror body, and a silicon dioxide film plated on a surface of the silver film, and the ZrC film (2) is plated on a surface of the silicon dioxide film.
3. A light modulator as claimed in claim 1 or 2, characterized in that the ZrC film (2) has a thickness of 30nm to 150nm.
4. A fabrication method for forming a light modulator as claimed in claim 1, comprising the steps of: the ZrC film (2) is plated on the surface of the high reflector (1) by utilizing a magnetron sputtering coating process under the conditions that the sputtering power is 80W-120W, the pressure is 0.9Pa-1.1Pa, the bias voltage is 30V, the rotating speed of a substrate table is 4rpm-6rpm, the heating temperature of the substrate is 0 ℃ to 200 ℃, the argon flow is 25ml/min-30ml/min and the sputtering time is 3min-10min, so that the optical modulator is formed.
5. A method of fabricating a light modulator as defined in claim 4 wherein the steps are: the ZrC film (2) is plated on the surface of the high-reflection mirror (1) by utilizing a magnetron sputtering coating process under the conditions that the sputtering power is 100W, the pressure is 1Pa, the bias voltage is 30V, the rotating speed of a substrate table is 5rpm, the heating temperature of the substrate is 200 ℃, the argon flow is 30ml/min and the sputtering time is 5min, so that the optical modulator is formed.
6. A fabrication method for forming a light modulator as claimed in claim 2, comprising the steps of:
1) Based on the electron beam evaporation principle, respectively plating a silver film with the thickness of 140nm-220nm on the surface of the high-reflection mirror body and plating a silicon dioxide film with the thickness of 20nm-40nm on the surface of the silver film;
2) Plating a ZrC film (2) on the surface of the silicon dioxide film by utilizing a magnetron sputtering coating process under the conditions that the sputtering power is 80W-120W, the pressure is 0.9Pa-1.1Pa, the bias voltage is 30V, the rotating speed of a substrate table is 4rpm-6rpm, the heating temperature of the substrate is 0 ℃ to 200 ℃, the argon flow is 25ml/min-30ml/min and the sputtering time is 3min-10min, thereby forming the optical modulator.
7. A method of manufacturing a light modulator as claimed in claim 6,
the step 1) is specifically as follows: based on the electron beam evaporation principle, respectively plating a silver film with the thickness of 180nm on the surface of the high-reflection mirror body and plating a silicon dioxide film with the thickness of 20nm on the surface of the silver film;
the step 2) is specifically as follows: and plating the ZrC film (2) on the surface of the silicon dioxide film by utilizing a magnetron sputtering coating process under the conditions that the sputtering power is 100W, the pressure is 1Pa, the bias voltage is 30V, the rotating speed of a substrate table is 5rpm, the heating temperature of the substrate is 200 ℃, the argon flow is 30ml/min and the sputtering time is 5min to form the optical modulator.
8. A laser mounted with the optical modulator of claim 1 or 2.
9. The laser device according to claim 8, comprising a pump source (3), a collimating focusing mirror (5), a gain medium (6), an output mirror (7) and an optical modulator (8), wherein the pump source (3) is connected with the collimating focusing mirror (5), the gain medium (6) and the output mirror (7) are sequentially arranged from front to back along the emitting direction of the laser, and the optical modulator (8) and the output mirror (7) are arranged on the same optical axis.
10. The laser according to claim 9, characterized in that the pump source (3) is connected to the input end of the collimating focusing mirror (5) through an optical fiber (4).
CN202211398565.0A 2022-11-09 2022-11-09 Optical modulator, preparation method thereof and laser Pending CN115621830A (en)

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Application Number Priority Date Filing Date Title
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CN115621830A true CN115621830A (en) 2023-01-17

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