CN115621153A - Cleaning brush, substrate processing device, and substrate processing method - Google Patents

Cleaning brush, substrate processing device, and substrate processing method Download PDF

Info

Publication number
CN115621153A
CN115621153A CN202210757085.2A CN202210757085A CN115621153A CN 115621153 A CN115621153 A CN 115621153A CN 202210757085 A CN202210757085 A CN 202210757085A CN 115621153 A CN115621153 A CN 115621153A
Authority
CN
China
Prior art keywords
chuck
brush
contact portion
suction surface
contact portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210757085.2A
Other languages
Chinese (zh)
Inventor
若松孝彬
児玉宗久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2021115846A external-priority patent/JP2023012299A/en
Priority claimed from JP2022090150A external-priority patent/JP2023012423A/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN115621153A publication Critical patent/CN115621153A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B08B1/12—Brushes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
    • B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention relates to a brush, a substrate processing device and a substrate processing method. Provided is a technique for uniformly cleaning the suction surface of a chuck by using a brush. The cleaning brush cleans the suction surface of the chuck. The cleaning brush is provided with: a brush table linearly extending from a rotation center line of the chuck to a radially outer side; and a plurality of contact portions protruding from the brush base and contacting the suction surface. When viewed from a direction orthogonal to the suction surface, a plurality of rows each including a plurality of the contact portions arranged at intervals in a1 st direction are provided at intervals in a2 nd direction intersecting the 1 st direction. The 2 nd direction is a longitudinal direction of the brush base. The cleaning brush is provided with a swinging part. The swing portion swings the brush base so that a moving distance of each of the contact portions in a radial direction of the chuck is equal to or longer than an interval in the 2 nd direction between two adjacent rows.

Description

Cleaning brush, substrate processing device, and substrate processing method
Technical Field
The invention relates to a brush, a substrate processing device and a substrate processing method.
Background
The brush described in patent document 1 is arranged in a machine tool to clean a surface on which a workpiece is placed. The cleaning brush includes a brush base and a plurality of brush rows. The brush table rotates around an axis substantially perpendicular to the cleaning surface. The plurality of brush rows are arranged on a surface of the brush table facing the cleaning surface. Each brush line is arranged along an inclined line extending obliquely to the radial straight line with the middle of the radial straight line extending around the axis as a starting point.
Documents of the prior art
Patent literature
Patent document 1: japanese patent laid-open No. 2003-59881
Disclosure of Invention
Problems to be solved by the invention
An aspect of the present disclosure provides a technique for uniformly cleaning an adsorption surface of a chuck using a cleaning brush.
Means for solving the problems
According to the technical scheme, the cleaning brush cleans the adsorption surface of the chuck. The cleaning brush is provided with: a brush table linearly extending from a rotation center line of the chuck to a radially outer side; and a plurality of contact portions protruding from the brush base and contacting the suction surface. When viewed from a direction orthogonal to the suction surface, a plurality of rows each including a plurality of the contact portions arranged at intervals in a1 st direction are provided at intervals in a2 nd direction intersecting the 1 st direction. The 2 nd direction is a longitudinal direction of the brush holder. The cleaning brush includes a swinging portion. The swing portion swings the brush base so that a moving distance of each of the contact portions in a radial direction of the chuck is equal to or longer than an interval in the 2 nd direction between two adjacent rows.
ADVANTAGEOUS EFFECTS OF INVENTION
According to an aspect of the present disclosure, the suction surface of the chuck can be uniformly cleaned using the cleaning brush.
Drawings
Fig. 1 is a plan view showing a substrate processing apparatus according to an embodiment.
Fig. 2 is a side view showing an example of the chuck and the tool driving portion.
Fig. 3 is a plan view showing a brush according to an embodiment.
Fig. 4 is a partially enlarged plan view of fig. 3.
Fig. 5 is a plan view showing an example of the flow of the cleaning liquid in the vicinity of the brush in fig. 3.
Fig. 6 is a side view showing an example of the type of the contact portion.
Fig. 7 is a plan view showing an example of the swing portion.
Fig. 8 is a plan view showing an example of the swing range of the brush base.
Fig. 9 is a plan view showing an example of the flow of the cleaning liquid in the vicinity of the brush in fig. 8.
Fig. 10 is a plan view showing an example of a plurality of contact portions arranged on an imaginary circle.
Fig. 11 is a plan view showing a modification of the swing range of the brush base.
Fig. 12 is a sectional view showing a brush according to a modification.
Fig. 13 is a sectional view showing an example of movement of the pin of fig. 12.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same or corresponding components are denoted by the same reference numerals, and description thereof may be omitted. In the present specification, the X-axis direction, the Y-axis direction, and the Z-axis direction are perpendicular to each other. The X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction. The U-axis direction, the V-axis direction and the Z-axis direction are mutually perpendicular directions. The U-axis direction and the V-axis direction are horizontal directions, the U-axis direction is a longitudinal direction of the brush base 51, and the V-axis direction is a width direction of the brush base 51.
A substrate processing apparatus 1 according to an embodiment will be described with reference to fig. 1. In the present embodiment, the substrate processing apparatus 1 is a grinding apparatus that grinds the substrate W, but may be a polishing apparatus, a cutting apparatus, a dressing apparatus, or the like. The substrate processing apparatus 1 may be any apparatus as long as it processes the substrate W adsorbed on the adsorption surface of the chuck 20. The substrate W includes a semiconductor substrate or a glass substrate. The semiconductor substrate is a silicon wafer or a compound semiconductor wafer.
The substrate processing apparatus 1 includes, for example, a turntable 10, four chucks 20, and three driving units 30. The rotary table 10 holds the four chucks 20 around the rotation center line R1, and rotates around the rotation center line R1, thereby rotationally moving the four chucks 20. The rotation direction of the turntable 10 may be switched between a clockwise direction and a counterclockwise direction when viewed from above.
The four chucks 20 are arranged at equal intervals around the rotation center line R1 of the turntable 10. Each chuck 20 rotates together with the rotary table 10, and moves to, for example, the 1 st carry-in/carry-out position A0, the 1 st grinding position A1, the 2 nd grinding position A2, the 3 rd grinding position A3, and the 1 st carry-in/carry-out position A0 in this order. The 1 st carry-in/out position A0 serves as both a carry-in position where the transfer device 2 delivers the substrate W to the chuck 20 and a carry-out position where the transfer device 2 receives the substrate W from the chuck 20. In the present embodiment, the carrying-in position and the carrying-out position are the same position, but the carrying-in position and the carrying-out position may be different positions. The 1 st grinding position A1 is a position at which primary grinding of the substrate W is performed. The 2 nd grinding position A2 is a position where secondary grinding of the substrate W is performed. The 3 rd grinding position A3 is a position at which the third grinding of the substrate W is performed.
Further, the 1 st carrying-in/out position A0, the 1 st grinding position A1, the 2 nd grinding position A2, and the 3 rd grinding position A3 are arranged counterclockwise in this order around the rotation center line R1 of the turntable 10, but the technique of the present disclosure is not limited to this. For example, the 2 nd feeding/discharging position may be arranged instead of the 3 rd grinding position A3. The 2 nd carrying-in/out position is a carrying-in position where the transfer device 2 delivers the substrate W to the chuck 20 and a carrying-out position where the transfer device 2 receives the substrate W from the chuck 20, similarly to the 1 st carrying-in/out position A0. In this case, for example, two substrates W are carried in to the 1 st carry-in/out position A0 and the 2 nd carry-in/out position, are ground at the 1 st grinding position A1 and the 2 nd grinding position A2, and are carried out at the 1 st carry-in/out position A0 and the 2 nd carry-in/out position.
Next, an example of the chuck 20 and the drive unit 30 will be described with reference to fig. 2. The chuck 20 has a suction surface 21 for sucking the substrate W. The suction surface 21 sucks the substrate W from below. The suction surface 21 is a horizontal plane in fig. 2, but may be a conical surface symmetrical about the rotation center line R2 of the chuck 20. In the latter case, the rotation center line R2 is inclined with respect to the Z-axis direction, and the thickness distribution of the ground substrate W can be adjusted by the inclination angle.
The cartridge 20 has, for example, a porous body 22 on its adsorption surface 21. The porous body 22 is embedded in a recess on the upper surface of the base 23. When the gas inside the porous body 22 is sucked and the pressure of the porous body 22 becomes a negative pressure lower than the atmospheric pressure, the substrate W is adsorbed to the porous body 22. On the other hand, when the gas suction is stopped and the gas pressure of the porous bodies 22 is returned to the atmospheric pressure, the adsorption of the substrate W is released.
The chuck 20 is rotatably attached to the rotary table 10 about a rotation center line R2. A chuck motor 25 for rotating the chuck 20 is provided for each chuck 20. The rotational driving force of the chuck motor 25 may be transmitted to the chuck 20 via a rotation transmission mechanism such as a timing belt or a gear.
The driving section 30 drives the grinding tool D. The driving unit 30 rotates and moves up and down the grinding tool D. The grinding tool D grinds the substrate W adsorbed to the chuck 20. The tool for processing the substrate W is not limited to the grinding tool D, and may be, for example, a polishing tool, a cutting tool, a dressing tool, or the like.
The driving portion 30 includes a movable portion 31 to which the grinding tool D is attached. The grinding tool D is pressed against the substrate W to grind the substrate W. The grinding tool D includes, for example, a disk-shaped grinding wheel D1 and a plurality of grinding stones D2 arranged in a ring shape on a lower surface of the grinding wheel D1. Further, the grinding wheel D2 may be fixed to the entire lower surface of the grinding wheel D1.
The movable portion 31 has: a flange 32 to which the grinding tool D is attached; a main shaft 33, a flange 32 provided at a lower end of the main shaft 33; and a spindle motor 34 that rotates the spindle 33. The flange 32 is horizontally disposed, and a grinding tool D is mounted on the lower surface thereof. The main shaft 33 is vertically disposed. The spindle motor 34 rotates the spindle 33 to rotate the grinding tool D attached to the flange 32. The rotation center line R3 of the grinding tool D is the rotation center line of the spindle 33.
The driving unit 30 further includes an elevating unit 35 for elevating and lowering the movable unit 31. The elevating unit 35 includes, for example, a vertical Z-axis guide 36, a Z-axis slider 37 that moves along the Z-axis guide 36, and a Z-axis motor 38 that moves the Z-axis slider 37. The movable portion 31 is fixed to the Z-axis slider 37, and the movable portion 31 and the grinding tool D are lifted and lowered together with the Z-axis slider 37. The lifting unit 35 further includes a position detector 39 for detecting the position of the grinding tool D. The position detector 39 detects, for example, the rotation of the Z-axis motor 38, and detects the position of the grinding tool D.
The lifting unit 35 lowers the grinding tool D from the standby position. The grinding tool D rotates while descending, and is in contact with the upper surface of the rotating substrate W to grind the entire upper surface of the substrate W. When the thickness of the substrate W reaches the set value, the lifting unit 35 stops the lowering of the grinding tool D. Then, the lifting unit 35 lifts the grinding tool D to the standby position.
The substrate processing apparatus 1 sequentially processes a plurality of substrates W. When the particles bite between the suction surface 21 of the chuck 20 and the substrate W, the substrate W is locally deformed. When the substrate W is ground in this state, a local concave defect called a pit is formed on the surface of the substrate W. The fine particles causing the pits are, for example, a transfer product transferred from the substrate W, machining debris generated by machining the substrate W, or fragments generated by breakage of the porous body 22.
Therefore, as shown in fig. 1, the substrate processing apparatus 1 includes a brush 50. The brush 50 cleans the suction surface 21 of the rotating chuck 20 to remove particles adhering to the suction surface 21. After one substrate W is unloaded from the adsorption surface 21 and before another substrate W is adsorbed to the adsorption surface 21, the brush 50 cleans the adsorption surface 21. The brush 50 is provided at the 1 st sending-out position A0, for example. When the 2 nd send-out position is disposed instead of the 3 rd grinding position A3, the brush 50 may be provided in both the 1 st send-out position A0 and the 2 nd send-in-out position.
The substrate processing apparatus 1 further includes a nozzle 80 for supplying a cleaning liquid to the suction surface 21 of the chuck 20. The nozzle 80 is provided at, for example, the 1 st feeding position A0. When the 2 nd carrying-in/out position is disposed instead of the 3 rd grinding position A3, the nozzle 80 may be provided at both the 1 st carrying-in/out position A0 and the 2 nd carrying-in/out position. The nozzle 80 supplies a cleaning liquid to the suction surface 21 of the rotating chuck 20, for example. The cleaning liquid is supplied to the rotation center line R2 of the adsorption surface 21 or its vicinity, and spreads in the entire radial direction of the adsorption surface 21 by centrifugal force. As the cleaning liquid, for example, DIW (deionized water) is used. The nozzle 80 may be a two-fluid nozzle that discharges a cleaning liquid and a gas in a mixed manner.
The substrate processing apparatus 1 includes a control unit 90. The control Unit 90 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores a program for controlling various processes executed in the substrate processing apparatus 1. The control unit 90 controls the operation of the substrate processing apparatus 1 by causing the CPU91 to execute a program stored in the storage medium 92.
Next, referring to fig. 3 to 5, a brush 50 according to an embodiment will be described. In fig. 3, only the outline of the brush base 51 is shown in order to show the arrangement of the contact portions 52. The brush 50 includes a brush base 51 and a plurality of contact portions 52. The brush base 51 linearly extends radially outward from the rotation center line R2 of the chuck 20. The brush base 51 has a length approximately equal to the radius of the suction surface of the chuck 20, for example, and extends above the peripheral edge of the suction surface 21 of the chuck 20. The brush base 51 may be fixed during the cleaning process of the chuck 20 or may swing as described later.
Each contact portion 52 protrudes from the lower surface of the brush base 51 and contacts the suction surface 21. Each contact portion 52 scrapes off or peels off the fine particles adhering to the suction surface 21. Each contact portion 52 is, for example, a bundle of a plurality of Mao Jishu. The tufts are implanted in holes provided in the lower surface of the brush base 51.
In the present embodiment, each contact portion 52 is a tuft, but may be a sponge or a pin. Each contact portion 52 may be any portion as long as it can remove particles adhering to the suction surface 21 of the chuck 20 without damaging the suction surface 21. Each contact portion 52 is preferably formed of resin to avoid damage to the suction surface of the chuck 20.
As shown in fig. 3, when viewed from the direction (Z-axis direction) orthogonal to the suction surface 21, a plurality of rows 53 each including a plurality of contact portions 52 arranged at intervals in the 1 st direction are provided at intervals in the 2 nd direction intersecting the 1 st direction. The 2 nd direction is the longitudinal direction (U-axis direction) of the brush base 51. The longitudinal direction of the brush base 51 coincides with the radial direction of the chuck 20 in fig. 3. The number of the plurality of columns 53 provided with an interval in the 2 nd direction is not particularly limited.
The 1 st direction is the extending direction of the columns 53. The 1 st direction is, for example, a direction obliquely intersecting the 2 nd direction. For example, the 1 st direction is a direction inclined from the radial inner side of the chuck 20 to the radial outer side from the upstream side to the downstream side in the rotation direction of the chuck 20. That is, the 1 st direction is a direction inclined radially outward with respect to the rotation center line R2 of the chuck 20 from the upstream side in the rotation direction of the chuck 20 to the downstream side in the rotation direction. The 1 st direction may be a direction inclined in the opposite direction, or may be a direction perpendicular to the 2 nd direction.
When viewed from the Z-axis direction, a plurality of rows 54 formed by a plurality of contact portions 52 arranged at intervals in the 2 nd direction (U-axis direction) are provided in the 4 th direction perpendicular to the 2 nd direction. The 4 th direction is the width direction (V-axis direction) of the brush base 51. The number of rows 54 is not limited to three, and may be two or four or more.
As shown in fig. 5, the cleaning solution L is supplied to the upstream side of the brush 50 in the rotation direction of the chuck 20. The cleaning liquid L rotates together with the chuck 20 and reaches the cleaning brush 50. The brush 50 includes a discharge path 55 for discharging the cleaning liquid L between two adjacent rows 53.
The discharge path 55 extends in the 1 st direction. If the 1 st direction is a direction inclined from the radial inner side to the radial outer side of the chuck 20 from the upstream side to the downstream side in the rotation direction of the chuck 20, the cleaning liquid containing fine particles discharged from the brush 50 flows from the radial inner side to the radial outer side of the chuck 20 and is discharged to the outside of the suction surface 21 in a short time. Therefore, the time for the cleaning liquid containing fine particles discharged from the brush 50 to stay on the adsorption surface 21 can be shortened. Further, the area in which the cleaning liquid containing fine particles discharged from the brush 50 is retained on the adsorption surface 21 can be reduced.
Each column 53 includes n contact portions 52 arranged in the 1 st direction. n is a natural number of 2 or more, preferably 3 or more. n is preferably a natural number of 7 or less. In each row 53, the m-th contact portion 52 (m is a natural number of 1 to n) located at the m-th position (m is 1 to n) from the upstream side in the rotation direction of the chuck 20 toward the downstream side in the rotation direction is referred to as an m-th contact portion 52-m.
As shown in fig. 4, if the direction perpendicular to the 1 st direction is defined as the 3 rd direction when viewed from the Z-axis direction, the 3 rd-direction interval G1 between two adjacent rows 53 is larger than the 1 st-direction interval G2 between two adjacent contact portions (e.g., the 1 st contact portion 52-1 and the 2 nd contact portion 52-2) in each row 53. The interval G1 is the width of the discharge path 55. If the distance G1 is larger than the distance G2, the width of the discharge path 55 is wide, and the cleaning liquid L easily passes through the discharge path 55.
In each column 53, the 1 st contact part 52-1, the 2 nd contact part 52-2, and the 3 rd contact part 52-3 are arranged at equal intervals in the 1 st direction. The discharge unevenness of the cleaning liquid L can be reduced. Further, in each column 53, the interval in the 1 st direction between the 1 st contact part 52-1 and the 2 nd contact part 52-2 and the interval in the 1 st direction between the 2 nd contact part 52-2 and the 3 rd contact part 52-3 may also be different. As long as the interval G1 in the 3 rd direction between two adjacent columns 53 is larger than the maximum value of the interval G2 in the 1 st direction between two adjacent contact portions 52 in each column 53.
The plurality of columns 53 are arranged at equal intervals in the U-axis direction. The discharge unevenness of the cleaning liquid L can be reduced. The plurality of columns 53 may be arranged at unequal intervals in the U-axis direction. In this case, the interval G1 in the 3 rd direction between the adjacent two columns 53, that is, the width of the discharge path 55 varies depending on the combination of the columns 53. The width of the discharge path 55 may be larger than the maximum value of the interval G2 in the 1 st direction between two adjacent contact portions in each of the two rows 53 sandwiching the discharge path 55.
In the adjacent two rows 53, the 1 st contact portion 52-1 of one row 53 and the 2 nd contact portion 52-2 of the other row 53 do not overlap in the U-axis direction but are separated in the U-axis direction even if they are the closest combination when viewed from the V-axis direction. Compared to the case of overlapping in the U-axis direction, the interval G1 between two adjacent rows 53 can be increased, and the width of the discharge path 55 can be increased. Therefore, the cleaning liquid L easily passes through the discharge path 55. The 2 nd contact portion of the present embodiment corresponds to the n-1 th contact portion described in the claims.
When viewed from the V-axis direction, two adjacent rows 53 overlap in the U-axis direction, and the 1 st contact portion 52-1 of one row 53 overlaps with the 3 rd contact portion 52-3 of the other row in the U-axis direction. Two adjacent columns 53 have no gap in the U-axis direction. When viewed from the V-axis direction, the plurality of contact portions 52 are continuously present in the U-axis direction, and no gap is present between the plurality of contact portions 52. This can suppress the remaining of the uncleaned region. The 3 rd contact portion of the present embodiment corresponds to the nth contact portion described in the claims.
The 1 st contact portion 52-1, the 2 nd contact portion 52-2, and the 3 rd contact portion 52-3 have the same size and the same shape of outer shape when viewed from the Z-axis direction. For example, the 1 st contact portion 52-1, the 2 nd contact portion 52-2, and the 3 rd contact portion 52-3 have the outer shape of a circle having the same diameter when viewed from the Z-axis direction. Further, although not shown, the 1 st contact portion 52-1, the 2 nd contact portion 52-2, and the 3 rd contact portion 52-3 may have different sizes or different shapes when viewed from the Z-axis direction.
Next, an example of the type of the contact portion 52 will be described with reference to fig. 6. In fig. 6, in order to clarify the boundary between the 1 st contact portion 52-1, the 2 nd contact portion 52-2, and the 3 rd contact portion 52-3, a gap is illustrated therebetween, but a gap may not be provided. The 1 st contact portion 52-1, the 2 nd contact portion 52-2, and the 3 rd contact portion 52-3 may also overlap without a gap when viewed from the U-axis direction.
In each column 53, the 1 st contact 52-1, the 2 nd contact 52-2 and the 3 rd contact 52-3 are different in kind. As described above, particles of various sizes and materials are adhered to the suction surface 21 of the chuck 20. The suction surface 21 of the chuck 20 has a plurality of protrusions and recesses (suction holes), and the adhesion force of the particles differs between the protrusions and recesses. By using a plurality of types of contact portions 52, particles of various sizes, materials, and adhesive forces can be efficiently removed.
Further, if at least two contact portions 52 in each row 53 are different in kind, it is possible to efficiently remove a plurality of kinds of fine particles. For example, when the 1 st contact portion 52-1 and the 2 nd contact portion 52-2 are different in kind, the 2 nd contact portion 52-2 and the 3 rd contact portion 52-3 may be the same in kind. In addition, when the 2 nd contact part 52-2 and the 3 rd contact part 52-3 are different in kind, the 1 st contact part 52-1 and the 2 nd contact part 52-2 may be the same in kind.
In each column 53, the 1 st contact 52-1, the 2 nd contact 52-2, and the 3 rd contact 52-3 have, for example, bristles with different wire diameters. The smaller the yarn diameter of the bristles, the higher the flexibility of the bristles, and the more likely fine particles entering the concave portions of the suction surface 21 are scraped off. Further, the larger the yarn diameter of the bristles, the higher the rigidity of the bristles, and the particles fixed to the suction surface 21 are easily peeled off. When the yarn diameter of the wool is different, the material of the wool may be the same.
Further, the material of the wool may be different. The 1 st contact portion 52-1, the 2 nd contact portion 52-2 and the 3 rd contact portion 52-3 may have bristles of different materials. The lower the hardness of the bristles, the higher the flexibility of the bristles, and the more likely fine particles entering the concave portions of the suction surface 21 are scraped off. Further, the higher the hardness of the hair, the higher the rigidity of the hair, and the particles fixed to the suction surface 21 are easily peeled off. The hardness of the wool is determined by the material of the wool. When the material of the hair is a resin, the hardness of the resin is expressed by shore hardness, for example. When the material of the bristles is different, the thread diameters of the bristles may be the same. Further, the material of the bristles may be different, and the thread diameters of the bristles may be different.
In each row 53, the contact portion 52 on the upstream side in the rotation direction of the chuck 20 has bristles with a larger wire diameter than the contact portion 52 on the downstream side in the rotation direction. For example, the 1 st contact portion 52-1 has bristles with a larger wire diameter than the 2 nd contact portion 52-2. The 2 nd contact portion 52-2 has bristles with a larger wire diameter than the 3 rd contact portion 52-3. The bristles of the contact portion 52 have a smaller wire diameter from the upstream side to the downstream side in the rotation direction of the chuck 20. The fine particles entering the recess can be scraped off after the adhered particles are separated by the hairs having high rigidity, and the efficiency of removing the particles can be improved.
Further, as described above, the material of the wool may be different. The contact portion 52 on the upstream side in the rotation direction of the chuck 20 has bristles made of a material harder than the contact portion 52 on the downstream side in the rotation direction. For example, the 1 st contact portion 52-1 has bristles made of a material harder than the 2 nd contact portion 52-2. The 2 nd contact portion 52-2 has bristles made of a material harder than the 3 rd contact portion 52-3. The hardness of the bristles of the contact portion 52 decreases from the upstream side to the downstream side in the rotation direction of the chuck 20. The fine particles entering the recess can be scraped off after the adhered particles are separated by the hairs having high rigidity, and the efficiency of removing the particles can be improved.
As described above, each contact portion 52 is not limited to a bundle of a plurality of Mao Jishu, and may be a sponge or a pin. When the contact portions 52 are made of sponge or pin, a plurality of types of particles can be efficiently removed if the diameter of the sponge or pin is different or the material of the sponge or pin is different.
In each row 54, all the contact portions 52 are the same type, but at least two contact portions 52 may be different types. For example, all the 1 st contact portions 52-1 are of the same kind, but at least two of the 1 st contact portions 52-1 may be of different kinds. However, in one row 53 and the other row 53, the number of the kinds of the contact portions 52 is preferably the same as the number of the kinds.
Next, an example of the swing portion 60 will be described with reference to fig. 7. The brush 50 includes a swinging unit 60 for swinging the brush base 51. The swing portion 60 swings the brush base 51 about a swing center line R4 perpendicular to the suction surface 21 of the chuck 20, for example. The rotation center line R4 of the brush base 51 is provided outside the suction surface 21 of the chuck 20, for example.
The swing unit 60 includes, for example, a1 st drive source 61, a rotation shaft 62, and a connection rod 63. The 1 st drive source 61 rotates the rotation shaft 62. The 1 st driving source 61 is, for example, an electric motor. Although a pneumatic actuator may be used as the 1 st driving source 61, the rotation speed and the rotation range can be controlled with high accuracy by using an electric motor. The rotation shaft 62 is vertically disposed. The connecting rod 63 extends linearly from the lower end of the rotating shaft 62 to the radially outer side of the rotating shaft 62. The brush base 51 is connected to the tip of the connecting rod 63 so as to be movable up and down.
The brush base 51 is provided below the connecting rod 63. The brush base 51 is pressed against the suction surface 21 of the chuck 20 by, for example, an elastic restoring force of a spring 64. The spring 64 is provided between the brush base 51 and the link 63. The kind of the spring 64 is not particularly limited. The spring 64 is a coil spring, a leaf spring, a coil spring, a conical spring, a ring spring, or the like. The brush base 51 may be pressed against the suction surface 21 of the chuck 20 by its own weight. A weight may also be provided above the brush table 51. The pressing pressure can be adjusted by the weight of the weight.
The swing unit 60 may include a2 nd driving source 65. The 2 nd driving source 65 moves the 1 st driving source 61 up and down, thereby moving the brush base 51 up and down. The 2 nd driving source 65 is, for example, an electric motor. The electric motor is used in combination with a ball screw. Although a pneumatic actuator may be used as the 2 nd driving source 65, an electric motor can reduce the impact.
Next, an example of the swing range of the brush base 51 will be described with reference to fig. 8 and 9. During the cleaning of the chuck 20, the brush table 51 is repeatedly turned around, for example, between the 1 st cleaning position indicated by a two-dot chain line in fig. 8 and the 2 nd cleaning position indicated by a solid line in fig. 8. When the brush base 51 is located at the 2 nd cleaning position, as shown in fig. 8, the longitudinal direction (U-axis direction) of the brush base 51 is inclined with respect to the radial direction of the chuck 20. While the brush base 51 is returning from the 2 nd cleaning position to the 1 st cleaning position, the brush base 51 may be raised so as to avoid the contact portion 52 from contacting the suction surface 21. The contact portion 52 may be brought into contact with the suction surface 21 only while the brush base 51 moves from the 1 st cleaning position to the 2 nd cleaning position. The swinging of the brush base 51 is performed under the control of the control section 90.
The 1 st cleaning position is a position where the tip of the brush base 51 coincides with the rotation center line R2 of the chuck 20, but may be a non-coincident position. In the latter case, the brush base 51 may pass through a position where the tip of the brush base 51 coincides with the rotation center line R2 of the chuck 20 in the middle of the oscillation. When the tip of the brush base 51 coincides with the rotation center line R2 of the chuck 20, the longitudinal direction of the brush base 51 coincides with the radial direction of the chuck 20.
As shown in fig. 9, when the brush base 51 is located at the 2 nd cleaning position, the 1 st direction, which is the extending direction of the discharge path 55, is inclined outward in the radial direction of the chuck 20 toward the downstream side in the rotation direction of the chuck 20. The same applies to the case where the brush base 51 is located at the 1 st cleaning position (see fig. 5).
While the brush base 51 is swung between the 1 st cleaning position and the 2 nd cleaning position, the 1 st direction, which is the extending direction of the discharge path 55, is always inclined outward in the radial direction of the chuck 20 toward the downstream side in the rotation direction of the chuck 20. Thus, the cleaning liquid containing fine particles discharged from the brush 50 flows from the radially inner side to the radially outer side of the chuck 20 at all times, and is discharged to the outside of the suction surface 21 in a short time. Therefore, the time during which the cleaning liquid containing fine particles discharged from the brush 50 stays on the adsorption surface 21 can be shortened. Further, the area in which the cleaning liquid containing fine particles discharged from the brush 50 stays on the adsorption surface 21 can be reduced.
As shown in fig. 8, while the brush 50 cleans the suction surface 21 of the chuck 20, the chuck 20 is rotated and the brush base 51 is rotated. The 1 st contact portion 52-1A of the 2 nd row 53 from the rotation center line R4 of the brush base 51 moves from the imaginary line L1 to the imaginary line L2 in the radial direction of the chuck 20. The moving distance MD is equal to or greater than the interval G3 (MD = G3 in fig. 8). The interval G3 is an interval in the 2 nd direction (the longitudinal direction of the brush base) between two adjacent rows 53, for example, an interval in the 2 nd direction between the 1 st contact portions.
The swing portion 60 swings the brush base 51 so that the distance MD of movement of each contact portion 52 in the radial direction of the chuck 20 is equal to or greater than the interval G3. The same portion of the suction surface 21 can be cleaned by the plurality of contact portions 52, and the uniformity of cleaning can be improved. This is particularly effective when at least two contact portions 52 in each row 53 are different in kind.
As described above, the swing portion 60 swings the brush base 51 about the swing center line R4 perpendicular to the suction surface 21 of the chuck 20. Thus, while the brush base 51 is rotated, the gap between the brush base 51 and the suction surface 21 can be maintained constant, and the contact portion 52 can be pressed against the suction surface 21 with a constant pressure.
While the brush 50 cleans the suction surface 21 of the chuck 20, the chuck 20 is rotated and the brush base 51 is rotated. The farther the contact position of the chuck 20 with the contact portion 52 is from the rotation center line R2 of the chuck 20, the faster the peripheral speed of the chuck 20. The farther the contact position of the chuck 20 and the contact portion 52 is from the rotation center line R4 of the brush base 51, the faster the peripheral speed of the brush base 51.
At the contact position between the chuck 20 and the contact portion 52, the larger the relative speed difference between the chuck 20 and the brush base 51, the larger the impact force at the time of collision of the particles adhering to the chuck 20 with the contact portion 52. Therefore, the rotation center line R4 of the brush base 51 is provided outside the suction surface 21 of the chuck 20 so that the impact force is uniform in the entire radial direction of the suction surface 21. In this case, the circumferential speed of the chuck 20 is faster as the contact position of the chuck 20 and the contact portion 52 is farther from the rotation center line R2 of the chuck 20, and conversely, the circumferential speed of the brush base 51 is slower.
As shown in fig. 10, the contact portion 52 may be provided in plural along an imaginary circle 56, and the imaginary circle 56 may pass through the rotation center line R2 of the chuck 20 with the rotation center line R4 of the brush table 51 as the center. The brush base 51 rotates, and the plurality of contact portions 52 pass through the center of the suction surface 21. The center of the suction surface 21 can be cleaned by the plurality of contact portions 52, and the uniformity of cleaning can be improved.
The at least two contact portions 52 arranged on the imaginary circle 56 may be different in kind. By using the plurality of types of contact portions 52, it is possible to efficiently remove a plurality of types of fine particles from the center of the adsorption surface 21. At least two contact portions 52 arranged on the imaginary circle 56 may have different materials or bristles with different wire diameters.
Next, a modification of the swing range of the brush base 51 will be described with reference to fig. 11. During the cleaning of the chuck 20, the brush base 51 repeats linear movement between, for example, the 1 st cleaning position indicated by a two-dot chain line in fig. 11 and the 2 nd cleaning position indicated by a solid line in fig. 11.
The brush base 51 moves linearly in the longitudinal direction (U-axis direction) of the brush base 51. During this period, the longitudinal direction of the brush base 51 coincides with the radial direction of the chuck 20. The brush base 51 is oscillated so that the distance MD of movement of each contact portion 52 in the radial direction of the chuck 20 is equal to or greater than the interval G3 in the 2 nd direction (the longitudinal direction of the brush base) between the two adjacent rows 53.
Next, a modification of the brush 50 will be described with reference to fig. 12 and 13. Hereinafter, differences from fig. 6 will be mainly described. The brush 50 includes, for example, a brush base 51, a1 st contact portion 52-1, a2 nd contact portion 52-2, and a3 rd contact portion 52-3. The 1 st contact 52-1 includes a pin 521. The 2 nd contact part 52-2 includes a tuft 523. Contact 3-3 contains tufts 524.
In fig. 12 and 13, reference symbol PL indicates the length of the portion of the pin 521 protruding from the brush base 51 (hereinafter referred to as the protruding length of the pin 521). The pin 521 protrudes downward from the lower surface of the brush base 51. The longitudinal direction of the pin 521 is, for example, the Z-axis direction. The pin 521 is partially housed inside the brush base 51, and the remaining portion protrudes outside the brush base 51.
The brush base 51 movably holds the pin 521 such that the protruding length PL of the pin 521 can be changed. The pin 521 is movable in the longitudinal direction of the pin 521, for example. Even if the pins 521 are worn and the entire length L0 of the pins 521 becomes short, the pins 521 can be continuously used by adjusting the projection length PL of the pins 521 to a desired length.
The brush stage 51 has, for example, a1 st hole 511 and a2 nd hole 512 having a diameter larger than that of the 1 st hole 511. The pin 521 is inserted into the 1 st hole 511 so as to be movable. One end (e.g., lower end) of the pin 521 protrudes outside the brush base 51. On the other hand, the other end (e.g., the upper end) of the pin 521 is housed inside the brush base 51. A stopper 522 is provided at an upper end of the pin 521. The stopper 522 is disposed movably in the 2 nd hole 512.
The stopper 522 has a disk shape, for example. The stopper 522 has a diameter smaller than that of the 2 nd hole 512 and has a diameter larger than that of the 1 st hole 511. As shown in fig. 12, the stopper 522 abuts on a step surface between the 2 nd hole 512 and the 1 st hole 511, thereby preventing the pin 521 from being detached from the brush base 51. The stopper 522 may be provided in the middle of the pin 521 in a flange shape.
Brush stage 51 may also have a base 513, a cover 514, and a link 515. The susceptor 513 has a1 st hole 511 and a2 nd hole 512 formed therethrough. The cover 514 blocks the 2 nd hole 512 from the side opposite to the 1 st hole 511. The link member 515 links the base 513 and the cover 514 to be separable. The link 515 is not particularly limited, and is, for example, a bolt. The pin 521 can be replaced by coupling and separating the base 513 and the cover 514. It is possible to replace only the pin 521 without replacing the whole of the washing brush 50.
The pins 521 are formed of a material softer than the suction surface 21 of the chuck 20 to avoid damage to the suction surface 21 of the chuck 20. This is because, if the suction surface 21 of the chuck 20 is damaged, the degree of unevenness in the thickness of the substrate W after grinding becomes large. The cartridge 20 has, for example, a porous body 22 on its adsorption surface 21. When the porous body 22 is made of ceramic such as alumina, the pins 521 are made of resin such as PEEK (Poly Ether Ketone).
As described above, the pin 521 is made of a relatively soft material and therefore easily worn. Therefore, it is important that the projection length PL of the pin 521 can be adjusted. This is because, even if the pin 521 wears, the entire length L0 of the pin 521 becomes short, and the pin 521 can be continuously used by adjusting the projection length PL of the pin 521.
Pins 521 have a larger diameter and greater rigidity than the individual bristles comprising tufts 523, 524. Unlike the bristles 523 and 524, the pins 521 can crush the fine particles P embedded in the recesses of the suction surface 21 of the chuck 20, and can flatten the fine particles P.
As shown in fig. 13, the pins 521 are preferably disposed at the most upstream side in the rotation direction of the chuck in each row 53. The pin 521 comes into contact with the fine particles P before the tufts 523, 524, thereby pulverizing the fine particles P. Therefore, abrasion of the tufts 523, 524 can be suppressed.
Since the pins 521 crush the fine particles P, dust is newly generated. The bristles 523 and 524 may be disposed downstream of the pins 521 in the rotation direction of the chuck 20 so that newly generated dust is immediately swept out by the bristles 523 and 524. The newly generated dust can be efficiently removed.
The brush 50 may have an elastic body, and may have a spring 57 as an example. The spring 57 urges the pin 521 in a direction protruding outward of the brush base 51 by its elastic restoring force. The spring 57 is, for example, a coil spring, and is disposed between the stopper 522 and the cap 514 in a compressed state. The spring 57 may be a plate spring or the like, and is not limited to a coil spring.
Since the washing brush 50 has the spring 57, the projection length PL of the pin 521 can be automatically adjusted to a desired length. The pins 521 strike the suction surface 21 of the chuck 20 before the tufts 523, 524. Then, the pin 521 moves in the direction of entering the brush holder 51 against the elastic restoring force of the spring 57 until it reaches the same height as the bristles 523 and 524.
Tufts 523, 524 are secured to brush block 51. The pin 521 moves between a position (see fig. 12) where the tip (e.g., lower end) of the pin 521 protrudes beyond the tips (e.g., lower ends) of the tufts 523, 524 and a position (see fig. 13) where the tip of the pin 521 is at the same height as the tips of the tufts 523, 524. Both the pins 521 and the bundles 523 and 524 can be brought into contact with the suction surface 21 of the chuck 20.
The brush, the substrate processing apparatus, and the substrate processing method according to the present invention have been described above, and the present disclosure is not limited to the above embodiments and the like. Various changes, modifications, substitutions, additions, deletions, and combinations may be made within the scope of the claims. These, of course, also fall within the technical scope of the present disclosure.

Claims (18)

1. A cleaning brush for cleaning an adsorption surface of a card, wherein,
the cleaning brush is provided with: a brush table linearly extending from a rotation center line of the chuck to a radially outer side; and a plurality of contact portions protruding from the brush base and contacting the suction surface,
a plurality of rows each including a plurality of the contact portions arranged at intervals in a1 st direction are provided at intervals in a2 nd direction intersecting the 1 st direction, the 2 nd direction being a longitudinal direction of the brush base, when viewed from a direction orthogonal to the suction surface,
the brush includes a swinging portion that swings the brush base so that a moving distance of each contact portion in a radial direction of the chuck is equal to or longer than an interval in the 2 nd direction between two adjacent rows in a cleaning process of the chuck.
2. The washing brush according to claim 1,
the swing portion makes the brush table rotate around a rotation center line perpendicular to the suction surface of the chuck.
3. The washing brush according to claim 2,
the rotary central line of the brush table is arranged outside the adsorption surface of the chuck.
4. The washing brush according to claim 2 or 3,
the contact portion is provided in plural along an imaginary circle which passes through a rotation center line of the chuck with the rotation center line of the brush table as a center.
5. The washing brush according to claim 4,
at least two of the contact portions arranged on the imaginary circle are different in kind.
6. The washing brush according to claim 1,
the swing portion linearly moves the brush table in a longitudinal direction of the brush table.
7. The washing brush according to any of claims 1 to 3,
in each of the columns, at least two of the contact portions are different in kind.
8. The washing brush according to claim 7,
in each of the rows, at least two of the contact portions have bristles of different materials or different wire diameters.
9. The washing brush according to claim 8,
in each of the rows, the contact portion on the upstream side in the rotation direction of the chuck has a harder material or a burr having a larger wire diameter than the contact portion on the downstream side in the rotation direction of the chuck.
10. The washing brush according to any of claims 1 to 3,
the 1 st direction is a direction obliquely intersecting the 2 nd direction, and is a direction from a radial inner side to a radial outer side of the chuck from an upstream side to a downstream side in a rotation direction of the chuck.
11. The washing brush according to claim 10,
a direction intersecting perpendicularly with the 1 st direction is defined as a3 rd direction when viewed from a direction orthogonal to the suction surface,
the interval in the 3 rd direction between adjacent two of the columns is larger than the interval in the 1 st direction between adjacent two of the contact portions in each of the columns.
12. The washing brush according to claim 10,
a plurality of the columns are arranged at equal intervals in the 2 nd direction.
13. The washing brush according to claim 10,
in each of the columns, three or more of the contact portions are arranged at equal intervals in the 1 st direction.
14. The washing brush according to claim 10,
each of the columns includes n contact portions arranged in the 1 st direction, where n is a natural number of 3 or more,
in each row, the contact portion located m-th from the upstream side in the rotation direction of the chuck toward the downstream side in the rotation direction is defined as an m-th contact portion, where m is a natural number of 1 to n inclusive,
in adjacent two of the columns, the 1 st contact portion of the column on the radially outer side and the n-1 st contact portion of the column on the radially inner side do not overlap when viewed from a direction perpendicular to the 2 nd direction.
15. The washing brush according to claim 10,
each of the columns includes n contact portions arranged in the 1 st direction, where n is a natural number of 3 or more,
in each row, the contact portion located m-th from the upstream side in the rotation direction of the chuck toward the downstream side in the rotation direction is defined as an m-th contact portion, where m is a natural number of 1 to n inclusive,
two adjacent columns overlap when viewed from a direction perpendicular to the 2 nd direction, and the 1 st contact portion of the column on the radially outer side overlaps with the n th contact portion of the column on the radially inner side when viewed from a direction perpendicular to the 2 nd direction.
16. The washing brush according to any of claims 1 to 3,
the contact portion is a bundle of bristles, sponge or pin formed by a plurality of Mao Jishu.
17. A substrate processing apparatus, wherein,
the substrate processing apparatus includes:
a washing brush according to any one of claims 1 to 16;
the chuck;
a nozzle for supplying a cleaning liquid to the adsorption surface of the chuck; and
and a driving unit that drives a tool for processing the substrate attached to the attachment surface of the chuck.
18. A method for processing a substrate, wherein,
the substrate processing method comprises the following steps:
sequentially processing a plurality of the substrates using the substrate processing apparatus according to claim 17; and
and cleaning the suction surface with the brush after one of the substrates is detached from the suction surface and before another one of the substrates is sucked to the suction surface.
CN202210757085.2A 2021-07-13 2022-06-29 Cleaning brush, substrate processing device, and substrate processing method Pending CN115621153A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2021-115846 2021-07-13
JP2021115846A JP2023012299A (en) 2021-07-13 2021-07-13 Cleaning brush, substrate processing apparatus, and substrate processing method
JP2022090150A JP2023012423A (en) 2021-07-13 2022-06-02 Cleaning brush, substrate processing apparatus, and substrate processing method
JP2022-090150 2022-06-02

Publications (1)

Publication Number Publication Date
CN115621153A true CN115621153A (en) 2023-01-17

Family

ID=84856771

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210757085.2A Pending CN115621153A (en) 2021-07-13 2022-06-29 Cleaning brush, substrate processing device, and substrate processing method

Country Status (1)

Country Link
CN (1) CN115621153A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116329151A (en) * 2023-05-30 2023-06-27 沈阳和研科技股份有限公司 Packaged brush cleaning device and cleaning method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116329151A (en) * 2023-05-30 2023-06-27 沈阳和研科技股份有限公司 Packaged brush cleaning device and cleaning method

Similar Documents

Publication Publication Date Title
KR102182910B1 (en) Wafer edge polishing apparatus and method
EP0837493B1 (en) Cleaning apparatus
EP0764478A1 (en) Method of and apparatus for cleaning workpiece
US20020007840A1 (en) Substrate cleaning apparatus, substrate cleaning method and substrate processing apparatus
KR101658250B1 (en) Apparatus for polishing rear surface of substrate, system for polishing rear surface of substrate, method for polishing rear surface of substrate and recording medium having program for polishing rear surface of substrate
JP2009260142A (en) Wafer-polishing apparatus and wafer-polishing method
CN115621153A (en) Cleaning brush, substrate processing device, and substrate processing method
JP6345988B2 (en) Substrate processing equipment
JP2008010557A (en) Method for polishing and working semiconductor wafer
TW201834786A (en) Substrate polishing device and substrate polishing method
CN115621155A (en) Cleaning brush, substrate processing device, and substrate processing method
CN115621154A (en) Cleaning brush, substrate processing device, and substrate processing method
JP6887016B2 (en) Gettering layer forming apparatus, gettering layer forming method and computer storage medium
JP6141153B2 (en) Foreign matter removal tool and foreign matter removal method
JP2023012423A (en) Cleaning brush, substrate processing apparatus, and substrate processing method
JP2020184581A (en) Substrate processing apparatus and substrate processing method
JP2023012299A (en) Cleaning brush, substrate processing apparatus, and substrate processing method
JP2023012298A (en) Cleaning brush, substrate processing apparatus, and substrate processing method
JPH10264011A (en) Precision polishing device and method
JP5257752B2 (en) Polishing pad dressing method
JPH03294160A (en) Grinding stone and grinding device
CN215588812U (en) Substrate processing apparatus and polishing head
KR19990041455U (en) Final pad conditioning equipment for CMP equipment for semiconductor device manufacturing
KR20070024145A (en) Cmp apparatus for semiconductor device manufacturing
WO2008082056A1 (en) Diamond tool and method for manufacturing the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination