CN115616867A - Method for monitoring minimum line width process on photomask - Google Patents
Method for monitoring minimum line width process on photomask Download PDFInfo
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- CN115616867A CN115616867A CN202111470035.8A CN202111470035A CN115616867A CN 115616867 A CN115616867 A CN 115616867A CN 202111470035 A CN202111470035 A CN 202111470035A CN 115616867 A CN115616867 A CN 115616867A
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000012544 monitoring process Methods 0.000 title claims abstract description 30
- 238000013461 design Methods 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 abstract description 7
- 238000005259 measurement Methods 0.000 description 14
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000002146 bilateral effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
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Abstract
The invention relates to a method for monitoring a minimum line width process on a photomask, which comprises the following steps: designing a Critical Dimension (CD) pattern to simulate a type of minimum line width in a layout design; placing the critical dimension pattern in the cutting path; and monitoring the behavior and the result of the critical dimension pattern to judge the quality of the minimum line width in the layout design. The invention can realize the monitoring of the minimum line width process after the exposure/etching of the photomask, thereby judging whether the minimum line width is the expected target size.
Description
Technical Field
The present invention relates to monitoring of pattern linewidths after exposure/etching of a photomask, and more particularly, to a method of minimum linewidth process monitoring on a photomask.
Background
For the wafer manufacturing process, in the exposure and etching processes, as long as the minimum line width in the customer design layout in the layer of process is ensured to be the target size, the process manufacturing correctness of the whole layer of design layout can be ensured, and the product yield is finally ensured. Therefore, it is desirable to monitor the process yield after mask exposure/etching, in other words, to determine the pattern linewidth (especially the minimum linewidth) to the desired target dimension after mask exposure/etching.
Disclosure of Invention
In view of the deficiencies of the prior art, it is an object of the present invention to provide a desirable method for minimum line width process monitoring on a photomask.
In order to solve the technical problem, the invention adopts the following technical scheme:
according to the present invention, there is provided a method for monitoring a minimum line width process on a photomask, comprising:
designing a Critical Dimension (CD) pattern to simulate a type of minimum line width in a layout design;
placing the critical dimension pattern in the cutting path;
and monitoring the behavior and the result of the critical dimension pattern to judge the quality of the minimum line width in the layout design.
In one embodiment of the invention, the types of minimum line widths in the layout design include isolated width, isolated gap, dense width/gap, isolated hole, and dense hole.
In one embodiment of the invention, the transverse direction and/or the longitudinal direction are considered in the design of the critical dimension pattern, and the monitoring points are selected on the critical dimension pattern to monitor the type of the minimum line width in the layout design.
In one embodiment of the present invention, the critical dimension pattern is composed of three strips in the transverse direction and five strips in the longitudinal direction, wherein the combination of the three strips is separated from the combination of the five strips, and in the transverse direction, the three strips are sequentially arranged in parallel and at equal intervals up and down, and the center strip has the longest length, and the upper strip and the lower strip are symmetrically arranged with the center strip as the center; in the longitudinal direction, the five strip bodies are sequentially arranged in parallel and at equal intervals from left to right, the length of the central strip body is longest, two strip bodies are symmetrically arranged on two sides of the central strip body adjacent to the central strip body by taking the central strip body as the center, the other two strip bodies are symmetrically arranged on two sides of the central strip body far away from the central strip body by taking the central strip body as the center, and the lengths of the other two strip bodies far away from two sides of the central strip body are greater than the lengths of the two strip bodies adjacent to two sides of the central strip body.
In one embodiment of the present invention, the critical dimension pattern is composed of a plurality of scattered squares arranged at intervals in the lateral direction and the longitudinal direction.
In one embodiment of the present invention, the critical dimension pattern is composed of three strips in the transverse direction, five strips in the longitudinal direction, and a plurality of scattered squares in the longitudinal direction, the assembly of the three strips is separated from the assembly of the five strips, wherein in the transverse direction, the three strips are sequentially arranged in parallel and at equal intervals up and down, and the center strip has the longest length, and the upper strip and the lower strip are symmetrically arranged with the center strip as the center; in the longitudinal direction, five strip bodies are sequentially arranged in parallel and at equal intervals from left to right, and the length of a central strip body is longest, wherein two strip bodies are symmetrically arranged near the two sides of the central strip body by taking the central strip body as the center, the other two strip bodies are symmetrically arranged far away from the two sides of the central strip body by taking the central strip body as the center, and the lengths of the other two strip bodies far away from the two sides of the central strip body are greater than the lengths of the two strip bodies near the two sides of the central strip body; the plurality of scattered squares in the longitudinal direction are located on the lower side of the three strips in the transverse direction and on the right side of the five strips in the longitudinal direction.
In an embodiment of the invention, the critical dimension pattern is composed of only five strips in the longitudinal direction, the five strips are sequentially arranged in parallel and at equal intervals from left to right, and the length of the central strip is longest, wherein two strips are symmetrically arranged near two sides of the central strip with the central strip as the center, the other two strips are symmetrically arranged far away from two sides of the central strip with the central strip as the center, and the lengths of the other two strips far away from two sides of the central strip are greater than the lengths of the two strips near two sides of the central strip.
In one embodiment of the invention, the critical dimension pattern is composed of five strip bodies in the longitudinal direction and one strip body in the transverse direction, in the longitudinal direction, the five strip bodies are sequentially arranged in parallel and at equal intervals from left to right, and the length of the central strip body is longest, wherein two strip bodies are symmetrically arranged near two sides of the central strip body by taking the central strip body as the center, the other two strip bodies are symmetrically arranged far away from two sides of the central strip body by taking the central strip body as the center, and the lengths of the other two strip bodies far away from two sides of the central strip body are greater than the lengths of the two strip bodies near two sides of the central strip body; and one strip body in the transverse direction and the central strip body in the longitudinal direction form a cross-shaped structure at the upper part of the central strip body.
In one embodiment of the present invention, the critical dimension pattern is composed of a cross-shaped strip body at the upper portion and a plurality of scattered square bodies at intervals in the transverse direction and the longitudinal direction at the lower portion.
In one embodiment of the invention, the critical dimension pattern is composed of five strip bodies in the longitudinal direction, one strip body in the transverse direction and a plurality of scattered square bodies in the longitudinal direction, the five strip bodies are sequentially arranged in parallel and at equal intervals from left to right, and the length of the central strip body is longest, wherein two strip bodies are symmetrically arranged near the two sides of the central strip body by taking the central strip body as the center, the other two strip bodies are symmetrically arranged far away from the two sides of the central strip body by taking the central strip body as the center, and the lengths of the other two strip bodies far away from the two sides of the central strip body are greater than the lengths of the two strip bodies near the two sides of the central strip body; one strip body in the transverse direction and the central strip body in the longitudinal direction form a cross-shaped structure at the upper part of the central strip body; a plurality of scattered cuboids in the longitudinal direction are positioned on the right side of the cross-shaped structure.
By adopting the technical scheme, compared with the prior art, the invention has the following advantages:
the invention can realize the monitoring of the minimum line width process after the exposure/etching of the photomask, thereby judging whether the minimum line width is the expected target size.
Drawings
FIG. 1 is a flow chart illustrating a method for minimum line width process monitoring on a photomask according to the present invention;
FIG. 2 illustrates various types of minimum line widths in layout design according to an embodiment of the present invention;
FIG. 3 illustrates a critical dimension pattern designed according to an embodiment of the present invention;
FIG. 4 illustrates a critical dimension pattern designed according to another embodiment of the present invention;
FIG. 5 illustrates a critical dimension pattern designed in accordance with yet another embodiment of the present invention;
FIG. 6 illustrates a critical dimension pattern designed in accordance with yet another embodiment of the present invention;
FIG. 7 illustrates a critical dimension pattern designed in accordance with yet another embodiment of the present invention;
FIG. 8 illustrates a critical dimension pattern designed according to yet another embodiment of the present invention;
FIG. 9 shows a critical dimension pattern designed according to yet another embodiment of the present invention.
List of reference numerals
In the X transverse direction
Longitudinal direction of Y
Detailed Description
It should be understood that the embodiments of the invention shown in the exemplary embodiments are illustrative only. Although only a few embodiments of the present invention have been described in detail above, those skilled in the art will readily appreciate that many modifications are possible without materially departing from the teachings of the present subject matter. Accordingly, all such modifications are intended to be included within the scope of this invention. Other substitutions, modifications, changes and omissions may be made in the design, operating conditions and parameters and the like of the following exemplary embodiments without departing from the spirit of the present invention.
The invention provides a method for monitoring a minimum line width process on a photomask, which comprises the following steps: designing a Critical Dimension (CD) pattern to simulate a type of minimum line width in a layout design; placing the critical dimension pattern in the cutting path; the behavior and the result of the critical dimension pattern are monitored to judge the quality of the minimum line width in the layout design.
In the above method, the types of minimum line widths in the layout design include isolated width, isolated gap, dense width/gap, isolated hole, and dense hole.
In the above method, the lateral direction and/or the longitudinal direction is considered in the design of the critical dimension pattern, and the monitoring point is selected on the critical dimension pattern to monitor the type of the minimum line width in the layout design.
In the above method, the critical dimension pattern is composed of three strips in the transverse direction and five strips in the longitudinal direction, wherein the combination of the three strips is separated from the combination of the five strips, and in the transverse direction, the three strips are sequentially arranged in parallel and at equal intervals from top to bottom, and the central strip has the longest length, and the upper strip and the lower strip are symmetrically arranged with the central strip as the center; in the longitudinal direction, the five strip bodies are sequentially arranged in parallel and at equal intervals from left to right, the length of the central strip body is longest, two strip bodies are symmetrically arranged on two sides of the central strip body adjacent to the central strip body by taking the central strip body as the center, the other two strip bodies are symmetrically arranged on two sides of the central strip body far away from the central strip body by taking the central strip body as the center, and the lengths of the other two strip bodies far away from two sides of the central strip body are greater than the lengths of the two strip bodies adjacent to two sides of the central strip body.
In the above method, the critical-dimension pattern is composed of a plurality of scattered squares arranged at intervals in the lateral direction and the longitudinal direction.
In the method, the critical dimension pattern consists of three strips in the transverse direction, five strips in the longitudinal direction and a plurality of scattered squares in the longitudinal direction, the combination of the three strips is separated from the combination of the five strips, wherein the three strips are sequentially arranged in parallel and at equal intervals in the transverse direction, the center strip has the longest length, and the upper strip and the lower strip are symmetrically arranged by taking the center strip as the center; in the longitudinal direction, five strip bodies are sequentially arranged in parallel and at equal intervals from left to right, and the length of a central strip body is longest, wherein two strip bodies are symmetrically arranged near the two sides of the central strip body by taking the central strip body as the center, the other two strip bodies are symmetrically arranged far away from the two sides of the central strip body by taking the central strip body as the center, and the lengths of the other two strip bodies far away from the two sides of the central strip body are greater than the lengths of the two strip bodies near the two sides of the central strip body; the plurality of scattered squares in the longitudinal direction are located on the lower side of the three strips in the transverse direction and on the right side of the five strips in the longitudinal direction.
In the method, the critical dimension pattern is only composed of five strips in the longitudinal direction, the five strips are sequentially arranged in parallel and at equal intervals from left to right, and the length of the central strip is longest, wherein two strips are symmetrically arranged near the two sides of the central strip by taking the central strip as the center, the other two strips are symmetrically arranged far away from the two sides of the central strip by taking the central strip as the center, and the lengths of the other two strips far away from the two sides of the central strip are greater than the lengths of the two strips near the two sides of the central strip.
In the method, the critical dimension pattern consists of five strip bodies in the longitudinal direction and one strip body in the transverse direction, the five strip bodies are sequentially arranged in parallel and at equal intervals from left to right in the longitudinal direction, the length of the central strip body is longest, two strip bodies are symmetrically arranged by taking the central strip body as the center and are adjacent to two sides of the central strip body, the other two strip bodies are symmetrically arranged by taking the central strip body as the center and are far away from two sides of the central strip body, and the lengths of the other two strip bodies far away from the two sides of the central strip body are greater than the lengths of the two strip bodies adjacent to the two sides of the central strip body; and one strip body in the transverse direction and the central strip body in the longitudinal direction form a cross-shaped structure at the upper part of the central strip body.
In the above method, the critical dimension pattern is composed of a "cross" shaped strip body located at the upper portion and a plurality of scattered square bodies located at the lower portion and arranged at intervals in the lateral direction and the longitudinal direction.
In the method, the critical dimension pattern consists of five strip bodies in the longitudinal direction, one strip body in the transverse direction and a plurality of scattered square bodies in the longitudinal direction, the five strip bodies are sequentially arranged in parallel and at equal intervals from left to right, and the length of the central strip body is longest, wherein two strip bodies are symmetrically arranged near the two sides of the central strip body by taking the central strip body as the center, the other two strip bodies are symmetrically arranged far away from the two sides of the central strip body by taking the central strip body as the center, and the lengths of the other two strip bodies far away from the two sides of the central strip body are greater than the lengths of the two strip bodies near the two sides of the central strip body; one strip body in the transverse direction and the central strip body in the longitudinal direction form a cross-shaped structure at the upper part of the central strip body; a plurality of scattered cuboids in the longitudinal direction are positioned on the right side of the cross-shaped structure.
The system provided by the present invention is described in detail below by way of specific embodiments.
As shown in fig. 1, a method for monitoring a minimum line width process on a photomask includes steps S100, S200, and S300, wherein:
in step S100, a Critical Dimension (CD) pattern is designed to simulate a type of a minimum line width in a layout design;
in step S200, placing the critical dimension pattern in the scribe line;
in step S300, the behavior and the result of the critical dimension pattern are monitored to determine the quality of the minimum line width in the layout design.
As shown in fig. 2, fig. 2 illustrates various types of minimum line widths in layout design according to an embodiment of the present invention, where the types of minimum line widths in layout design include the following types: isolated width, isolated gap, dense width/gap, isolated hole, and dense hole.
As shown in fig. 3 and 4, which illustrate schematic diagrams of cd patterns designed according to two embodiments of the present invention, fig. 3 and 4 provide two basic designs of cd patterns, both considering the lateral direction X and the longitudinal direction Y.
Referring again to fig. 3, the critical dimension pattern is composed of three strips in the transverse direction X and five strips in the longitudinal direction Y, wherein the combination of the three strips is separated from the combination of the five strips, and in the transverse direction X, the three strips are sequentially arranged in parallel and at equal intervals from top to bottom, and the central strip has the longest length, and the upper strip and the lower strip are symmetrically arranged with the central strip as the center; in longitudinal direction Y, five strip bodies are parallel and equally spaced in proper order from left to right, and the length of center strip body is the longest, wherein two strip bodies use center strip body as the bilateral symmetry of the central strip body of central proximity, two strip bodies use center strip body as the bilateral symmetry of the central strip body of central distance to arrange, the length of two strip bodies of other two strip bodies of central strip body both sides of keeping away from is greater than the length of two strip bodies of adjacent central strip body both sides. When monitoring the type of the minimum line width in the layout design on the critical dimension pattern, in the longitudinal direction Y, measurement near the point a marked on fig. 3 may be selected to obtain an isolated width, measurement near the point B marked to obtain a first dense width, measurement near the point C marked to obtain a second dense width, and measurement near the point F marked to obtain a gap width between two tape bodies; in the lateral direction X, measurements near the point D marked on fig. 3 can be chosen to obtain isolated widths, and measurements near the point E marked to obtain dense widths.
Referring again to fig. 4, the critical dimension pattern is composed of a plurality of scattered squares arranged at intervals in the transverse direction X and in the longitudinal direction Y. Similarly, when monitoring the type of the minimum line width in the layout design on the critical dimension pattern, the measurement near points a, B, and C marked on fig. 4 may be selected to obtain the corresponding dense holes, respectively.
Based on the two basic patterns designed in fig. 3 and 4, the present invention can derive various combinations according to different needs. Fig. 5-9 illustrate a combination of five different critical dimension patterns.
Referring to fig. 5, the critical dimension pattern is composed of three strips in the transverse direction X, five strips in the longitudinal direction Y, and a plurality of scattered squares in the longitudinal direction Y, the combination of the three strips is separated from the combination of the five strips, wherein in the transverse direction X, the three strips are sequentially arranged in parallel and at equal intervals from top to bottom, the length of the central strip is the longest, and the upper strip and the lower strip are symmetrically arranged with the central strip as the center; in the longitudinal direction Y, five strip bodies are sequentially arranged in parallel and at equal intervals from left to right, the length of a central strip body is longest, two strip bodies are symmetrically arranged near the two sides of the central strip body by taking the central strip body as the center, the other two strip bodies are symmetrically arranged far away from the two sides of the central strip body by taking the central strip body as the center, and the lengths of the other two strip bodies far away from the two sides of the central strip body are greater than the lengths of the two strip bodies near the two sides of the central strip body; the plurality of scattered squares in the longitudinal direction Y are located on the lower side of the three strips in the transverse direction X and on the right side of the five strips in the longitudinal direction Y. Similarly, in monitoring the type of the minimum line width in the layout design on the above critical dimension pattern, in the longitudinal direction Y, measurement may be selected to be performed near the point a marked on fig. 5 to obtain an isolated width, near the point B marked to obtain a dense width, near the point D marked to obtain a dense hole width, and near the point F marked to obtain a gap width between two tape bodies; in the transverse direction X, measurements near the point C marked on fig. 5 may be selected to obtain an isolated width, and measurements near the point E marked to obtain a dense width.
Referring to fig. 6, the critical dimension pattern is composed of only five strips in the longitudinal direction Y, the five strips are sequentially arranged in parallel and at equal intervals from left to right, and the length of the central strip is longest, wherein two strips are symmetrically arranged near to two sides of the central strip around the central strip as the center, the other two strips are symmetrically arranged far away from two sides of the central strip around the central strip, and the lengths of the other two strips far away from two sides of the central strip are greater than the lengths of the two strips near to two sides of the central strip. Similarly, in monitoring the type of minimum line width in the layout design on the critical dimension pattern, measurements near point a marked on fig. 6 may be selected to obtain an isolated width, measurements near point B marked to obtain a first dense width, measurements near point C marked to obtain a second dense width, and measurements near point F marked to obtain a gap width between two strips.
Referring to fig. 7, the critical dimension pattern is composed of five strips in the longitudinal direction Y and one strip in the transverse direction X, in the longitudinal direction Y, the five strips are sequentially arranged in parallel and at equal intervals from left to right, and the length of the central strip is the longest, wherein two strips are symmetrically arranged near the two sides of the central strip with the central strip as the center, the other two strips are symmetrically arranged far away from the two sides of the central strip with the central strip as the center, and the lengths of the other two strips far away from the two sides of the central strip are greater than the lengths of the two strips near the two sides of the central strip; and one strip body in the transverse direction X and the central strip body in the longitudinal direction Y form a cross-shaped structure at the upper part of the central strip body. Similarly, when monitoring the type of the minimum line width in the layout design on the critical dimension pattern, it is possible to select to measure near the marked point a on fig. 7 to obtain the isolated width and measure near the marked point B to obtain the dense width.
Referring to fig. 8, the critical dimension pattern is composed of a "cross" shaped strip body at the upper portion and a plurality of scattered square bodies at intervals in the transverse direction X and the longitudinal direction Y at the lower portion. Similarly, when monitoring the type of minimum line width in the layout design on the critical dimension pattern, it is possible to choose to measure near points a, B, and C marked on fig. 8 to obtain corresponding dense holes, and measure near point D marked to obtain isolated holes, respectively.
Referring to fig. 9, the critical dimension pattern is composed of five strips in the longitudinal direction Y, one strip in the transverse direction X, and a plurality of scattered squares in the longitudinal direction Y, the five strips are sequentially arranged in parallel and at equal intervals from left to right, and the length of the central strip is longest, wherein two strips are symmetrically arranged around the central strip as the center and close to both sides of the central strip, the other two strips are symmetrically arranged around the central strip and far away from both sides of the central strip, and the lengths of the other two strips far away from both sides of the central strip are greater than the lengths of the two strips close to both sides of the central strip; one strip body in the transverse direction X and the central strip body in the longitudinal direction Y form a cross-shaped structure at the upper part of the central strip body; a plurality of scattered squares in the longitudinal direction Y are located on the right side of the cross-shaped structure. Similarly, when monitoring the type of the minimum line width in the layout design on the critical dimension pattern, it is possible to choose to measure near point a marked on fig. 9 to obtain an isolated width, measure near point B marked to obtain a dense width, and measure near point D marked to obtain a dense hole.
In summary, the present invention can simulate the type of minimum line width in layout design by designing different Critical Dimension (CD) patterns; placing the critical dimension pattern in the cutting channel; and then monitoring the behavior and the result of the critical dimension pattern to judge the quality of the minimum line width in the layout design. Therefore, the invention can realize the monitoring of the minimum line width process after the exposure/etching of the photomask, thereby judging whether the minimum line width is the expected target size.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention; it is intended that the following claims be interpreted as including all such alterations, modifications, and equivalents as fall within the true spirit and scope of the invention.
Claims (10)
1. A method for minimum line width process monitoring on a photomask, comprising:
designing a critical dimension pattern to simulate the type of the minimum line width in the layout design;
placing the critical dimension pattern in a cutting path;
and monitoring the behavior and the result of the critical dimension pattern to judge the quality of the minimum line width in the layout design.
2. The method of on-reticle process monitoring of minimum line width of claim 1, wherein the type of minimum line width in the layout design comprises isolated width, isolated gap, dense width/gap, isolated hole and dense hole.
3. The method of claim 1, wherein a lateral direction and/or a longitudinal direction is considered in designing the critical dimension pattern, and a monitor point is selected on the critical dimension pattern to monitor the type of the minimum line width in the layout design.
4. The method of on-reticle minimum linewidth process monitoring according to claim 1, wherein the critical dimension pattern is composed of three strips in a lateral direction and five strips in a longitudinal direction, wherein the combination of the three strips is separated from the combination of the five strips, and in the lateral direction, the three strips are sequentially arranged in parallel and at equal intervals up and down, and a central strip has a longest length, and an upper strip and a lower strip are symmetrically arranged around the central strip; in the longitudinal direction, the five strip bodies are sequentially arranged in parallel and at equal intervals from left to right, the length of the central strip body is longest, two strip bodies are symmetrically arranged on two sides of the central strip body adjacent to the central strip body by taking the central strip body as the center, the other two strip bodies are symmetrically arranged on two sides of the central strip body away from the central strip body by taking the central strip body as the center, and the lengths of the other two strip bodies away from two sides of the central strip body are greater than the lengths of the two strip bodies adjacent to two sides of the central strip body.
5. The method of claim 1, wherein the critical dimension pattern comprises a plurality of discrete squares spaced apart in a lateral direction and a longitudinal direction.
6. The method of claim 1, wherein the critical dimension pattern comprises three strips in a transverse direction, five strips in a longitudinal direction, and a plurality of scattered squares in the longitudinal direction, the three strips are separated from the five strips, wherein the three strips are sequentially arranged in parallel and at equal intervals in the transverse direction, the central strip has the longest length, and the upper strip and the lower strip are symmetrically arranged around the central strip; in the longitudinal direction, five strip bodies are sequentially arranged in parallel and at equal intervals from left to right, and the length of the central strip body is longest, wherein two strip bodies are symmetrically arranged near the two sides of the central strip body by taking the central strip body as the center, the other two strip bodies are symmetrically arranged far away from the two sides of the central strip body by taking the central strip body as the center, and the lengths of the other two strip bodies far away from the two sides of the central strip body are greater than the lengths of the two strip bodies near the two sides of the central strip body; a plurality of scattered squares in the longitudinal direction are located on the lower side of three strips in the lateral direction and on the right side of five strips in the longitudinal direction.
7. The method as claimed in claim 1, wherein the critical dimension pattern comprises only five strips in a longitudinal direction, the five strips are sequentially arranged from left to right in parallel and at equal intervals, and the central strip has a longest length, wherein two strips are symmetrically arranged around the central strip and close to two sides of the central strip, the other two strips are symmetrically arranged around the central strip and far away from two sides of the central strip, and the length of the other two strips far away from two sides of the central strip is greater than the length of the two strips close to two sides of the central strip.
8. The method of process monitoring for minimum line width on a photomask of claim 1, wherein the critical dimension pattern comprises five strips in a longitudinal direction and one strip in a transverse direction, the five strips are sequentially arranged in parallel and at equal intervals from left to right in the longitudinal direction, and the central strip has the longest length, two strips are symmetrically arranged around the central strip near to two sides of the central strip, the other two strips are symmetrically arranged around the central strip far from two sides of the central strip, and the length of the other two strips far from two sides of the central strip is greater than the length of the two strips near to two sides of the central strip; and one strip body in the transverse direction and a central strip body in the longitudinal direction form a cross-shaped structure on the upper part of the central strip body.
9. The method of claim 1, wherein the critical dimension pattern comprises an upper cross stripe and a lower plurality of discrete squares spaced apart in a lateral direction and a longitudinal direction.
10. The method according to claim 1, wherein the critical dimension pattern comprises five strips in a longitudinal direction, one strip in a transverse direction, and a plurality of scattered squares in the longitudinal direction, wherein the five strips in the longitudinal direction are sequentially arranged in parallel and at equal intervals from left to right, and a center strip has a longest length, wherein two strips are symmetrically arranged around the center strip near two sides of the center strip, and the other two strips are symmetrically arranged around the center strip far from two sides of the center strip, and the lengths of the other two strips far from two sides of the center strip are greater than the lengths of the two strips near two sides of the center strip; one strip body in the transverse direction and a central strip body in the longitudinal direction form a cross-shaped structure on the upper part of the central strip body; a plurality of scattered cuboids in the longitudinal direction are located on the right side of the cross-shaped structure.
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