CN115616277A - Monitoring circuit and monitoring system - Google Patents
Monitoring circuit and monitoring system Download PDFInfo
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- CN115616277A CN115616277A CN202210022743.3A CN202210022743A CN115616277A CN 115616277 A CN115616277 A CN 115616277A CN 202210022743 A CN202210022743 A CN 202210022743A CN 115616277 A CN115616277 A CN 115616277A
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Abstract
The invention discloses a monitoring circuit and a monitoring system. The monitoring circuit is used for monitoring a circuit unit, and the circuit unit comprises a protection unit and a protected circuit. The monitoring circuit includes a monitoring unit. The monitoring unit includes a first sensor and a second sensor. The first sensor is arranged on a first side of the protection unit, and the second sensor is arranged on a second side of the protection unit. The first sensor is configured to acquire first magnetic field data indicative of a magnetic field direction of a magnetic field at the first sensor. The second sensor is for acquiring second magnetic field data indicative of a magnetic field direction of the magnetic field at the second sensor. The processing unit is used for receiving the first magnetic field data and the second magnetic field data, and if the magnetic field direction indicated by the first magnetic field data is opposite to the magnetic field direction indicated by the second magnetic field data, determining that an overcurrent event occurs in a circuit unit where the protection unit is located, so as to assist engineers in evaluating the circuit design rationality of the electronic equipment.
Description
Technical Field
The application relates to the technical field of hardware testing, in particular to a monitoring circuit and a monitoring system.
Background
Internal devices of electronic devices such as mobile phones are prone to generate over-current events that easily cause Electrical Over Stress (EOS) phenomena, such as electro-static discharge (ESD), surge, and direct current short circuit. It should be appreciated that when an EOS event occurs on an electronic device, there will be a risk of burn out.
The method monitors and reports the over-current events which easily cause EOS phenomena such as ESD, surge, direct current short circuit and the like, and can help engineers to evaluate the circuit design rationality of the electronic equipment. For example, when an overcurrent event frequently occurs in a certain part of a circuit of an electronic device, whether the part of the circuit is unreasonable or not is considered; for example, when the number of overcurrent events is large, it is considered whether the protection circuit has a sufficient protection capability. On the basis, engineers can optimize the circuit design of the electronic device, thereby reducing the risk of EOS and improving the circuit reliability of the electronic device. Based on this, a set of monitoring equipment that can monitor and report the overcurrent event that ESD, surge, direct current short circuit etc. easily lead to EOS phenomenon has very important meaning to the auxiliary engineer.
Disclosure of Invention
The embodiment of the application provides a monitoring circuit and a monitoring system, which are used for monitoring and reporting over-current events which easily cause EOS (electronic oxide system) phenomena such as ESD (electronic static discharge), surge and direct-current short circuit.
In order to achieve the above purpose, the embodiment of the present application adopts the following technical solutions:
in a first aspect, the present application provides a monitoring circuit. The monitoring circuit is used for monitoring an overcurrent event of the circuit unit. The circuit unit comprises a protection unit and a protected circuit, and the protection unit is used for protecting the protected circuit from overcurrent. The monitoring circuit includes: and the monitoring unit is used for monitoring the protection unit in the circuit unit. The monitoring unit includes a first sensor and a second sensor. The first sensor is arranged on a first side of the protection unit, and the second sensor is arranged on a second side of the protection unit. The arrangement direction of the first sensor and the second sensor is perpendicular to the current path of the protection unit. The first sensor is configured to acquire first magnetic field data indicative of a magnetic field direction of a magnetic field at the first sensor. The second sensor is for acquiring second magnetic field data indicative of a magnetic field direction of the magnetic field at the second sensor. And the processing unit is connected with the first sensor and the second sensor. The processing unit is used for receiving the first magnetic field data and the second magnetic field data, and determining that an overcurrent event occurs in a circuit unit where the protection unit is located if the magnetic field direction indicated by the first magnetic field data is opposite to the magnetic field direction indicated by the second magnetic field data.
It should be understood that when an overcurrent event occurs in the protection unit of the circuit unit, a large current is generated on the protection unit of the circuit unit, and the large current will generate an induced magnetic field around the large current. According to the right-hand screw rule of ampere's theorem, the large current will generate magnetic fields with opposite polarities (i.e., magnetic field directions) on both sides of the shielding unit of the circuit unit. Conversely, it can be understood that when the magnetic field directions of the two sides of the protection unit of the circuit unit are opposite, the protection unit of the circuit unit generates an overcurrent event. Based on this, in this embodiment, the first sensor is disposed at the first side of the protection unit, and collects first magnetic field data that can indicate the magnetic field direction of the magnetic field generated by the protection unit at the first side; and a second sensor is disposed on a second side of the shielding unit to acquire second magnetic field data indicative of a magnetic field direction of a magnetic field generated by the shielding unit on the second side thereof. By analyzing the magnetic field directions indicated by the first magnetic field data and the second magnetic field data, whether the magnetic field directions of the two sides of the protection unit are opposite or not can be judged, so that whether an overcurrent event occurs in the circuit unit where the protection unit is located or not can be judged according to the magnetic field directions.
In some embodiments of the present application, the processing unit is further configured to determine that the first magnetic field data and the second magnetic field data are two data within a preset time period before the processing unit determines that the overcurrent event occurs in the circuit unit where the protection unit is located.
It should be noted that, when a rotating magnetic field interference source exists outside the monitoring circuit, the first magnetic field data and the second magnetic field data indicating opposite magnetic field directions are uploaded by the first sensor and the second sensor, so that the monitoring circuit makes a misjudgment. In order to provide monitoring accuracy, in this embodiment, when the magnetic field direction indicated by the first magnetic field data is opposite to the magnetic field direction indicated by the second magnetic field data, it is further determined whether the first magnetic field data and the second magnetic field data are two data within a preset time period, and when both the two conditions are satisfied, it is determined that an overcurrent event occurs in the circuit unit where the protection unit is located.
It will be appreciated that when a rotating magnetic field interference source is present outside the monitoring circuit, the time interval between the first magnetic field data collected by the first sensor and the second magnetic field data collected by the second sensor is relatively long, whereas when an overcurrent event occurs in the protection unit, the time interval between the first magnetic field data collected by the first sensor and the second magnetic field data collected by the second sensor is short, which is generally determined by the processing time of the first sensor and the second sensor, and is generally two data of the order of microseconds. Therefore, by setting the preset time length to a value of microsecond order and distinguishing the first magnetic field data from the second magnetic field data, the overcurrent event of the circuit unit where the protection unit is located can be accurately judged.
Optionally, the acquisition time difference of the first magnetic field data and the second magnetic field data is within a preset time length.
Optionally, the first magnetic field data and the second magnetic field data are two data received by the processing unit within a preset time period.
In some embodiments of the present application, the circuit unit is plural. The monitoring unit is a plurality of. The guarded circuit includes at least one guarded port. The single circuit unit includes at least one guard unit. One protection unit is used for overcurrent protection of one protected port. One monitoring unit monitors one protection unit for one circuit unit. The processing unit is connected with the first sensor and the second sensor of each monitoring unit. The processing unit is also used for determining a circuit unit where the protection unit corresponding to the target monitoring unit is located as an occurrence position of an overcurrent event; and outputs the occurrence position of the overcurrent event. The target monitoring unit is a monitoring unit which is opposite to the magnetic field direction indicated by the first magnetic field data acquired by the first sensor and the magnetic field direction indicated by the second magnetic field data acquired by the second sensor.
When a plurality of circuit units need to be monitored, the occurrence position of the current event is determined and output by the processing unit, so that an engineer can accurately know the specific occurrence position of the overcurrent event.
Illustratively, the first sensor and the second sensor are both hall sensors.
In a second aspect, the present application further provides a monitoring system. The monitoring system includes: a circuit unit, and a monitoring circuit as claimed in any one of the first aspects. The circuit unit comprises a protection unit and a protected circuit, and the protection unit is used for overcurrent protection of the protected circuit. The monitoring circuit is used for monitoring the protection unit in the circuit unit.
Illustratively, the protection unit is a TVS diode or a zener diode.
Specifically, the cathode of the protection unit is connected with the protected port of the protected circuit, and the anode of the protection unit is connected with the ground terminal of the protected circuit.
It can be understood that the monitoring system provided by the second aspect is related to the monitoring circuit provided by the first aspect, and therefore, the beneficial effects achieved by the monitoring system can refer to the beneficial effects in the monitoring circuit provided by the first aspect, and the details are not repeated herein.
Drawings
Fig. 1 is a schematic structural diagram of a monitoring system according to an embodiment of the present disclosure;
fig. 2 is a schematic diagram illustrating an operating principle of a hall sensor according to an embodiment of the present disclosure;
fig. 3 is a schematic view of a monitoring system according to an embodiment of the present disclosure;
fig. 4 is a diagram illustrating a planar trace distribution of a protection unit of a first circuit unit according to an embodiment of the present disclosure;
fig. 5 is a diagram illustrating a distribution example of three-dimensional routing of a protection unit of a first circuit unit according to an embodiment of the present application;
fig. 6 is a flowchart illustrating a processing unit determining an overcurrent event according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more clear, the present application will be further described in detail with reference to the accompanying drawings.
In the following, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or as implying any indication of the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present application, the meaning of "a plurality" is two or more unless otherwise specified.
Electronic devices such as mobile phones are prone to generate an over-current event that easily causes an Electrical Over Stress (EOS) phenomenon, such as an electrostatic discharge (ESD), a surge, and a direct current short circuit. It should be appreciated that when an EOS event occurs on an electronic device, there will be a risk of burn out. Based on the method, the overcurrent events which easily cause EOS phenomena such as ESD, surge, direct current short circuit and the like are monitored and reported, and engineers can be helped to evaluate the circuit design rationality of the electronic equipment. For example, when an overcurrent event occurs frequently in a certain part of the circuit of the electronic device, whether the part of the circuit is unreasonable or not is considered; for another example, when an overcurrent event is not easily generated in a certain part of the electronic equipment, whether the part of the circuit is redundant is considered; for example, when the number of overcurrent events is large, it is considered whether the protection circuit has a sufficient protection capability. On the basis, engineers can optimize the circuit design of the electronic device, thereby reducing the risk of EOS and improving the circuit reliability of the electronic device.
Based on this, this application embodiment provides a monitoring system. The monitoring system can be used to monitor whether an overcurrent event occurs inside the electronic device, thereby providing auxiliary data for an engineer to optimize the circuit design of the electronic device.
Fig. 1 is a schematic structural diagram of a monitoring system provided in an embodiment of the present application. The monitoring system 00 includes a circuit board. The circuit board may be understood as a Printed Circuit Board (PCB) integrated with electronic components inside the electronic device to be monitored. The circuit board includes at least one circuit unit.
For convenience of understanding, the circuit board in the embodiment of the present application is described by taking an example in which the circuit board includes two circuit units, i.e., the first circuit unit 10 and the second circuit unit 20. It should be understood that in other embodiments, the circuit board may further include more or less circuit units, and this embodiment of the present application is not particularly limited thereto. In addition, the specific implementation of other circuit units is similar to that of the first circuit unit 10, and may be referred to as an adaptive implementation, which is not described herein again.
Wherein the first circuit unit 10 comprises a protected circuit. It should be noted that any separately formed functional component in the electronic device can be regarded as a protected circuit here. It should be understood that a functional component of an electronic device refers to a component of the electronic device that is required to implement a certain function, based on which one separately formed functional component may be integrated by a plurality of electronic components. For example, an Integrated Circuit (IC) chip may be regarded as a separately formed functional part; a board-to-board (B2B) connector can also be considered as a separately formed feature; a sensor can be considered to be a separately formed functional component.
In order to prevent the large current of the overcurrent event from damaging the protected circuit, the first circuit unit 10 further includes a protection unit for performing overcurrent protection on the protected circuit.
IN a specific implementation process, the first terminal IN1 of the protection unit is connected to a protected port of the protected circuit (a port of the protected circuit that is at risk of an overcurrent event), and the second terminal IN2 of the protection unit may be connected to a ground terminal of the protected circuit. The protection unit is turned on when an overcurrent event occurs and is also turned off when an overcurrent event does not occur (i.e., a normal operating state). Specifically, when an overcurrent event occurs, the protection unit is turned on to present a low-impedance state, and a large current when the overcurrent event occurs will be discharged to the ground from a path where the protection unit with low impedance is located, and will not enter a path where the protected circuit with high impedance is located from a protected port of the protected circuit, and then be discharged to the ground, so that the large current can be prevented from flowing into the protected circuit to cause the damage of the internal circuit thereof. When the protection unit is in a normal working state, the protection unit is closed to be in a high-impedance state, and a current signal in the normal working state flows into a path where the protected circuit with low impedance is located through a protected port of the protected circuit and does not flow into a path where the protection unit with high impedance is located, so that the normal work of the protected circuit can be ensured.
For example, the protection unit capable of providing the protection function may be a TVS diode, and may also be a zener diode. Of course, as electronic technology develops, more electronic devices with similar functions may appear, and therefore, the model of the protection unit is not particularly limited. Taking TVS diode as an example, IN order to provide the above function, the cathode of the TVS diode is used as the first terminal IN1 of the protection unit, and is connected to the protected port of the protected circuit; the anode of the TVS diode is used as the second terminal IN2 of the protection unit, and is connected to the ground terminal of the protected circuit.
The embodiment shown in fig. 1 is described by taking an example that the first circuit unit 10 includes only one protection unit, and the protection unit only protects one protected port of the protected circuit. It should be noted that overcurrent events may occur at multiple ports of the circuit being protected. Illustratively, the guarded circuit has one or more signal terminals connected with the signal terminals of the guarded circuits of the other circuit units to transmit data, and a power supply terminal connected with the output terminal of the power supply module to obtain a supply voltage. In some cases, when the signal terminal and the power terminal of the protected circuit are exposed, these ports have a risk of ESD event, and both of them can be regarded as the above-mentioned protected ports requiring overcurrent protection. It should be understood that the protected port may be a power terminal of the protected circuit or may be a signal terminal of the protected circuit.
In some embodiments, all protected ports of the protected circuit may share a protection unit for overcurrent protection. In this case, the first circuit unit 10 may include only one guard unit. The first terminal IN1 of the protection unit is connected to all protected ports of the protected circuit, and the second terminal IN2 of the protection unit is connected to the ground terminal of the protected unit.
In other embodiments, a protected port of a protected circuit is over-current protected using a protection unit. At this time, the first circuit unit 10 includes a plurality of guard units corresponding to the number of the guarded ports. Wherein one protection unit is used for the protection of one protected port. IN this case, for any set of protection unit and protected port, the first terminal IN1 of the protection unit is connected to the protected port, and the second terminal IN2 of the protection unit is connected to the ground terminal of the protected unit.
Based on this, in other embodiments, the first circuit unit 10 may further include more protection units, which is not specifically limited in this embodiment.
The above description explains a specific implementation of the first circuit unit 10. Similarly, the specific implementation of the second circuit unit 20 is the same as that of the first circuit unit 10, and reference may be made to the specific implementation of the first circuit unit 10, which is not described herein again.
In order to monitor the overcurrent events of the circuit units on the circuit board, the monitoring system 00 further includes a monitoring circuit 01. Based on this, the embodiment of the present application also provides a monitoring circuit 01. It should be noted that the monitoring circuit 01 can be manufactured and sold separately from the circuit board molding, in which case the monitoring circuit 01 can be monitored during the stage of testing the circuit board of the electronic device and the temporary composition monitoring system 00 of the circuit board of the electronic device. Of course, the monitoring circuit 01 may also be directly integrated into a circuit board, manufactured and sold together with the circuit board, in which case the monitoring circuit 01 is considered to be a part of the circuit board, and the circuit board containing the monitoring circuit 01 constitutes the monitoring system 00. The embodiment of the present application does not specifically limit the specific form of the monitoring circuit 01. For convenience of understanding the monitoring principle of the monitoring circuit 01, the monitoring circuit 01 is shown together in the monitoring system 00 shown in fig. 1 in the embodiment of the present application, and therefore, the monitoring circuit 01 provided in the embodiment of the present application is still described with reference to fig. 1 in the subsequent embodiments, and the monitoring circuit 01 is not separately illustrated.
With continued reference to fig. 1, it can be seen that the monitoring circuit 01 includes two monitoring units, namely, a first monitoring unit 30 and a second monitoring unit 40. The first monitoring unit 30 is used for monitoring the protection unit in the first circuit unit 10. The second monitoring unit 40 is used for monitoring of the guard unit in the second circuit unit 20.
It should be understood that in other embodiments, as the number of circuit units disposed on the circuit board and the number of guard units in each circuit unit increase or decrease, the number of guard units on the circuit board to be monitored may also increase or decrease accordingly. Accordingly, the monitoring circuit 01 may further include a greater or lesser number of monitoring units corresponding to the protection units one to one, which is not specifically limited in this embodiment of the application. In this case, one monitoring unit is used for monitoring of one protection unit in one circuit unit.
Wherein the first monitoring unit 30 includes a first sensor and a second sensor. The first sensor and the second sensor are distributed on both sides of the shield unit of the first circuit unit 10 during monitoring. Taking the current direction on the current path of the protection unit of the first circuit unit 10 (i.e. the path through which the current passes when flowing through the protection unit) as the S direction indicated by the solid line with an arrow in the figure, the two sides of the protection unit of the first circuit unit 10 refer to the two sides of the protection unit of the first circuit unit 10 in the direction perpendicular to the S direction. Taking the two sides of the protection unit of the first circuit unit 10 as the first side and the second side of the protection unit of the first circuit unit 10, respectively, the first sensor is disposed on the first side of the protection unit of the first circuit unit 10, and the second sensor is disposed on the second side of the protection unit of the first circuit unit 10, in this case, the arrangement direction of the first sensor and the second sensor is perpendicular to the S direction.
The first sensor is configured to acquire first magnetic field data indicative of a magnetic field direction of a magnetic field at the first sensor. The second sensor is for acquiring second magnetic field data indicative of a magnetic field direction of the magnetic field at the second sensor.
It should be understood that when the protection unit of the first circuit unit 10 generates an overcurrent event, a large current is generated on the protection unit of the first circuit unit 10, and the large current will generate an induced magnetic field around the large current. As can be seen from the right-hand screw rule of ampere's theorem, the large current will generate magnetic fields with opposite polarities (i.e., magnetic field directions) on both sides of the shielding unit of the first circuit unit 10. Conversely, it can be understood that when the magnetic field directions of both sides of the shielding unit of the first circuit unit 10 are opposite, the shielding unit of the first circuit unit 10 generates an overcurrent event.
Based on this, in this embodiment, the first sensor is disposed on the first side of the protection unit of the first circuit unit 10, and collects first magnetic field data that can indicate the magnetic field direction of the magnetic field generated by the protection unit of the first circuit unit 10 on the first side; and a second sensor is disposed at a second side of the shielding unit of the first circuit unit 10, and second magnetic field data that can indicate a magnetic field direction of a magnetic field generated at the second side by the shielding unit of the first circuit unit 10 is collected. By analyzing the magnetic field directions indicated by the first magnetic field data and the second magnetic field data, it can be determined whether the magnetic field directions of the two sides of the protection unit of the first circuit unit 10 are opposite, so as to determine whether the overcurrent event occurs in the first circuit unit 10 where the protection unit monitored by the first monitoring unit 30 is located.
In a specific implementation, the first sensor and the second sensor may be hall sensors. Referring to fig. 2, fig. 2 is a schematic diagram illustrating an operating principle of a hall sensor according to an embodiment of the present application. The hall sensor can be used to measure the magnetic field strength and the magnetic field direction of the magnetic field (i.e. the measured magnetic field), and the working principle of the hall sensor will be explained below.
The Hall sensor is in a structure of a semiconductor thin sheet. When a magnetic field with the magnetic field intensity of B passes through the semiconductor sheet along the thickness direction of the semiconductor sheet, a bias current I is conducted to two ends of the semiconductor sheet, and the bias current I passes through the Hall sensor from the point M to the point N. Under the action of Lorentz force, the electron current of the bias current I is shifted to one side when passing through the Hall sensor, so that the Hall sensor generates a potential difference in the arrangement direction of points C and D, namely a Hall voltage U H 。
For a given Hall device, the Hall voltage U is fixed when the bias current I is fixed H Will depend entirely on the intensity B of the magnetic field to be measured, the Hall voltage U H Numerical value ofThe magnitude of the voltage is changed along with the change of the magnetic field intensity B, and the Hall voltage U is H The positive and negative of (A) change with the change of the direction of the measured magnetic field. Visible, hall voltage U H The magnetic field direction of the magnetic field in which the hall sensor is located can be indicated.
Based on this, in the embodiment, two hall sensors are respectively disposed on two sides of the protection unit of the first circuit unit 10, so that the magnetic field generated by the protection unit of the first circuit unit 10 passes through the hall sensors in a direction perpendicular to the thickness direction of the hall sensors, and the hall voltage U generated by the hall sensors in the magnetic field can be obtained H . Based on the Hall voltage U H The magnetic field direction of the magnetic field generated by the shield unit of the first circuit unit 10 on both sides thereof can be obtained.
According to the formula of magnetic induction B = u 0 * The formula of i/2 pi r shows that B is the magnetic induction intensity; u. of 0 Is a vacuum permeability of 4 pi 10 -7 (ii) a i is the current of the current conductor generating the magnetic field, and the current conductor refers to the protection unit of the first circuit unit 10 in this embodiment; r is a distance between the induced magnetic field and the current conductor, which in this embodiment is a distance between the hall sensor and the protection unit of the first circuit unit 10. It can be seen that as r is larger, B is smaller. Based on this, in order to improve the detection sensitivity of the hall sensor, the hall sensor should be as close as possible to the protection unit of the first circuit unit 10. In a specific implementation process, a distance between the hall sensor and the protection unit of the first circuit unit 10 may not exceed 5mm (i.e., the first preset distance and the second preset distance). Of course, the sensitivities of the different hall sensors are different, and the upper limit value of the interval between the hall sensor and the protection unit of the first circuit unit 10 is also different. Further, as the sensitivity of the hall sensor becomes higher as the technology of the hall sensor improves, the distance between the hall sensor and the shield unit of the first circuit unit 10 may also be larger. Based on this, the upper limit value of the distance between the hall sensor and the protection unit of the first circuit unit 10 is not particularly limited in the embodiments of the present application.
In other embodiments, the first sensor and the second sensor may also be other sensors that can implement the above-mentioned data acquisition function, and this is not particularly limited in this embodiment of the application.
It should be noted that the above description uses the first monitoring unit 30 as an example to describe a specific implementation of the monitoring unit. In other embodiments, when the monitoring circuit 01 includes more monitoring units, the specific implementation of how the monitoring units monitor the corresponding protection units may refer to the specific implementation of the first monitoring unit 30, and details of the second monitoring unit 40 are not described in this embodiment.
In order to determine whether an overcurrent event occurs in the first circuit unit 10 where the protection unit is located according to the data collected by the first monitoring unit 30, the monitoring circuit 01 shown in fig. 1 further includes a processing unit 50.
Wherein the processing unit 50 is connected to the first sensor and the second sensor of the first monitoring unit 30, and is configured to receive the first magnetic field data from the first sensor and the second magnetic field data from the second sensor of the first monitoring unit 30; after receiving the first magnetic field data and the second magnetic field data, analyzing the magnetic field directions indicated by the first magnetic field data and the second magnetic field data, and if the magnetic field direction indicated by the first magnetic field data is opposite to the magnetic field direction indicated by the second magnetic field data, determining that an overcurrent event occurs in the first circuit unit 10 where the protection unit is located; if the two signals are the same, it is determined that the overcurrent event does not occur in the first circuit unit 10 where the protection unit is located.
In addition, in order to determine whether an overcurrent event occurs in the second circuit unit 20 where the protection unit is located according to the data collected by the second monitoring unit 40, the processing unit 50 shown in fig. 1 is further connected to the first sensor and the second sensor of the second monitoring unit 40, and is configured to receive the first magnetic field data of the first sensor and the second magnetic field data of the second sensor from the second monitoring unit 40, and determine whether an overcurrent event occurs in the second circuit unit 20 according to the first magnetic field data of the first sensor and the second magnetic field data of the second sensor of the second monitoring unit 40, and the specific determination process may refer to relevant contents of the first monitoring unit 30, which is not described herein again.
It should be understood that when the monitoring circuit 01 in fig. 1 is integrated on a circuit board, the processing unit 50 herein may multiplex the processor of the circuit board. Illustratively, the processing unit 50 may multiplex the AP processors on the circuit board, thus saving the circuit board space overhead and cost overhead associated with separately providing the processing unit 50.
Illustratively, taking the processing unit 50 as an AP processor as an example, the AP processor includes n GPIO terminals of GPIO [1] to GPIO [ n ]. One of the GPIO terminals (for example, GPIO [1 ]) of the AP processor is connected to an output terminal of the first sensor of the first monitoring unit 30 (for example, if the first sensor is a hall sensor, the output terminal is an output terminal of a hall voltage of the hall sensor); another GPIO terminal (e.g., GPIO 2) of the AP processor is connected to an output terminal of the second sensor of the first monitoring unit 30 (for example, the second sensor is a hall sensor, and the output terminal is an output terminal of a hall voltage of the hall sensor). Another GPIO terminal (e.g., GPIO [1 ]) of the AP processor is connected to an output terminal of the second monitoring unit 40 (for example, if the first sensor is a hall sensor, the output terminal is an output terminal of a hall voltage of the hall sensor); another GPIO terminal (for example GPIO 2) of the AP processor is connected to the output terminal of the second sensor of the second monitoring unit 40 (for example, the output terminal is the output terminal of the hall voltage of the hall sensor if the second sensor is the hall sensor).
For convenience of understanding, the following takes GPIO [1] connected to the output terminal of the first sensor of the first monitoring unit 30, GPIO [2] connected to the output terminal of the second sensor of the first monitoring unit 30, GPIO [3] connected to the output terminal of the first sensor of the second monitoring unit 40, and GPIO [4] connected to the output terminal of the second sensor of the second monitoring unit 40 as an example, and the process of how the AP processor determines that the overcurrent event occurs is exemplarily described with reference to tables 1 and 2. First, in tables 1 and 2, the magnetic field N indicates that the magnetic field direction is perpendicular to the paper surface, and the magnetic field S indicates that the magnetic field direction is perpendicular to the paper surface. The sensor reports "10" when the magnetic field direction is a magnetic field N, and reports "01" when the magnetic field direction is a magnetic field S.
Table 1: the reported values of the first sensor and the second sensor of the first monitoring unit 30
Table 2: the reported values of the first sensor and the second sensor of the second monitoring unit 40
It should be noted that the reported values in tables 1 and 2 can be understood as the values of the fields used for indicating the magnetic field direction in the first magnetic field data and the second magnetic field data.
In table 1, after receiving the first magnetic field data reported by GPIO [1] and the second magnetic field data reported by GPIO [2], the processing unit 50 extracts and analyzes the values of the fields indicating the magnetic field directions in the first magnetic field data and the second magnetic field data, so as to obtain the reported values of GPIO [ 1-2 ]. If the reported value of GPIO [ 1-2 ] is "0110" or "1001" in table 1, it indicates that an overcurrent event occurs in the first circuit unit 10; if the reported value of GPIO [ 1-2 ] is "1010" or "0101" in Table 1, it indicates that there is magnetic field interference in the first monitoring unit 30.
In table 2, after receiving the first magnetic field data reported by GPIO [3] and the second magnetic field data reported by GPIO [4], the processing unit 50 extracts and analyzes the values of the fields indicating the magnetic field directions in the first magnetic field data and the second magnetic field data, so as to obtain the reported values of GPIO [ 3-4 ]. If the reported value of GPIOs [ 3-4 ] is "0110" or "1001" in table 2, it indicates that an overcurrent event occurs in the protection unit of the second circuit unit 20; if the reported value of GPIO [ 3-4 ] is "1010" or "0101" in table 2, it indicates that there is magnetic field interference in the second monitoring unit 40.
It should be noted that, in other embodiments, when the monitoring circuit 01 has more monitoring units to monitor more protection units on the circuit board, the processing unit 50 connects the first sensor and the second sensor of each of the monitoring units, and determines whether an overcurrent event occurs in the corresponding circuit unit according to data collected by the monitoring units. The specific determination process may refer to the related content of the first monitoring unit 30, which is not described herein again.
As can be seen from the above, the circuit board includes two circuit units, i.e., the first circuit unit 10 and the second circuit unit 20. In other embodiments, there may be more circuit units on the circuit board. In order to help the engineer accurately know the specific occurrence location of the overcurrent event, further, the processing unit 50 may further output the occurrence location of the overcurrent event, specifically as follows:
the processing unit 50 is further configured to determine a target monitoring unit according to the first magnetic field data and the second magnetic field data uploaded by each monitoring unit. The target monitoring unit is a monitoring unit which is opposite to the magnetic field direction indicated by the first magnetic field data acquired by the first sensor and the magnetic field direction indicated by the second magnetic field data acquired by the second sensor. And then outputting the circuit unit where the protection unit monitored by the target monitoring unit is located as the occurrence position of the overcurrent event.
For the embodiment shown in fig. 1, when the magnetic field directions indicated by the first magnetic field data and the second magnetic field data uploaded by the first sensor and the second sensor of the first monitoring unit 30 are opposite, the first monitoring unit 30 is a target monitoring unit. The processing unit 50 outputs the first circuit unit 10 in which the protection unit monitored by the first monitoring unit 30 is located as the occurrence position of the overcurrent event.
When the magnetic field directions indicated by the first magnetic field data and the second magnetic field data uploaded by the first sensor and the second sensor of the second monitoring unit 40 are opposite, the second monitoring unit 40 is the target monitoring unit. The processing unit 50 outputs the second circuit unit 20 in which the protection unit monitored by the second monitoring unit 40 is located as the occurrence position of the overcurrent event.
Continuing with the above example, the reported values of GPIO [1] and GPIO [2] are from the first monitoring unit 30 and the reported values of GPIO [3] and GPIO [4] are from the second monitoring unit 40. Therefore, GPIO [1] and GPIO [2] correspond to the first circuit unit 10, and GPIO [3] and GPIO [4] correspond to the second circuit unit 20. Based on this, in the implementation process, if the AP processor determines that the indicated magnetic field directions are opposite by analyzing the first magnetic field data from the GPIO [1] and the second magnetic field data from the GPIO [2], the AP processor may determine the first circuit unit 10 corresponding to the GPIO [1] and the GPIO [2] as the occurrence position of the overcurrent event. If the AP processor determines that the indicated magnetic field directions are opposite by analyzing the first magnetic field data from GPIO [3] and the second magnetic field data from GPIO [4], the AP processor may determine the second circuit unit 20 corresponding to GPIO [3] and GPIO [4] as the occurrence location of the overcurrent event. Further, in some embodiments of the present application, the processing unit 50 may also be configured to record the occurrence time of the overcurrent event when determining the occurrence of the overcurrent event, so as to count the frequency, the period, and the like of the overcurrent event at a later stage.
It should be noted that the magnetic field generated by an external magnetic field interference source, such as a microphone in operation, may cover the first sensor and the second sensor of a certain monitoring unit. Typically, the source of magnetic field interference is located on the same side of the first and second sensors of the monitoring unit. As can be seen from the right-hand spiral law of ampere's theorem, the magnetic field interference source located on the same side of the first sensor and the second sensor generates magnetic fields at the first sensor and the second sensor in the same direction. Therefore, in the embodiment, when the magnetic field directions indicated by the first magnetic field data and the second magnetic field data are opposite, the occurrence of the overcurrent event is determined, and the interference of the external magnetic field interference source on the judgment of the overcurrent event by the processing unit can be basically eliminated.
It should be understood that, referring to fig. 3, fig. 3 is a schematic view of a monitoring system according to an embodiment of the present disclosure. The current direction of the magnetic field interference source is assumed to be upward in the figure. As shown in fig. 3 (a), the magnetic field interference source is located at the position shown in fig. 3 (a) at time T1, the magnetic field generated by the magnetic field interference source can cover the first sensor but cannot cover the second sensor, in which case the magnetic field interference source will generate a magnetic field at the first sensor in a direction perpendicular to the inward direction of the screen. As shown in (b) of fig. 3, the magnetic field interference source is located at the position shown in (b) of fig. 3 at time T2, the magnetic field generated by the magnetic field interference source can cover the second sensor but cannot cover the first sensor, in which case, the magnetic field interference source will generate a magnetic field at the second sensor, the direction of the magnetic field is perpendicular to the outside of the screen. It can be seen that in this scenario, the processing unit 50 may also receive the first magnetic field data and the second magnetic field data that can indicate that the magnetic field directions are opposite, so that a false determination will occur.
It should be appreciated that in the scenario illustrated in fig. 3, the first magnetic field data acquired by the first sensor and the second magnetic field data acquired by the second sensor are separated by a longer time. When the overcurrent event occurs in the protection unit, the interval between the first magnetic field data collected by the first sensor and the second magnetic field data collected by the second sensor is short, and the interval is usually determined by the processing time of the first sensor and the second sensor, and is usually two data in the order of microseconds.
Based on this, in order to reduce the false determination rate and improve the monitoring accuracy rate, the processing unit 50 is configured to determine that the first magnetic field data and the second magnetic field data are two data within a preset time period before the processing unit determines that the overcurrent event occurs in the circuit unit where the protection unit is located. In other words, the processing unit 50 is configured to determine that the overcurrent event occurs in the circuit unit corresponding to the monitoring unit when the magnetic field direction indicated by the first magnetic field data and the magnetic field direction indicated by the second magnetic field data are opposite, and the first magnetic field data and the second magnetic field data are two data within a preset time length (set to be on the order of microseconds) on the order of microseconds.
In some embodiments of the present application, in order to facilitate the processing unit 50 to determine whether the first magnetic field data and the second time data are two data within a preset time period, the processing unit 50 may determine whether the first magnetic field data and the second time data are two data within a preset time period based on a difference between a reception time of the first magnetic field data and a reception time of the second magnetic field data. If the first magnetic field data and the second magnetic field data are two data received by the processing unit 50 within a preset time period, that is, a difference between a receiving time of the first magnetic field data and a receiving time of the second magnetic field data is within the preset time period, it indicates that the first magnetic field data and the second data are two data within the preset time period; and if not, the first magnetic field data and the second time data are not two data within the preset time length.
In a specific implementation, the processing unit 50 may generate a first time when the first magnetic field data is received, and generate a second time when the second magnetic field data is received. The first time and the second time may be conditioned in fields of the first magnetic field data and the second magnetic field data, respectively, or may be stored separately. By determining whether the difference between the first time and the second time is within the preset time period, it can be determined whether the first magnetic field data and the second magnetic field data are two data received by the processing unit 50 within the preset time period.
In other embodiments of the present application, to facilitate the processing unit 50 to determine whether the first magnetic field data and the second time data are two data within a preset time period, the first magnetic field data is further used for indicating the acquisition time of the first magnetic field data, and the second magnetic field data is further used for indicating the acquisition time of the second magnetic field data. The processing unit 50 determines whether the first magnetic field data and the second magnetic field data are two data within a preset time period by judging whether a difference between a collection time indicated by the first magnetic field data and a collection time indicated by the second magnetic field data is within the preset time period. If the difference between the acquisition time indicated by the first magnetic field data and the acquisition time indicated by the second magnetic field data (i.e., the acquisition time difference between the first magnetic field data and the second magnetic field data) is within the preset time duration, it indicates that the first magnetic field data and the second magnetic field data are two data within the preset time duration; and if not, the first magnetic field data and the second time data are not two data within the preset time length.
In a specific implementation, the first sensor may add an acquisition time to a field of the generated first magnetic field data during the acquisition, and the second sensor may add an acquisition time to a field of the generated second magnetic field data during the acquisition. As such, the first magnetic field data and the second magnetic field data may be indicative of an acquisition time.
The above description describes how to eliminate the interference of an external magnetic field interference source to the determination process of the overcurrent event. The disturbance of the distribution of the lines and devices of the circuit board itself to the determination process of the overcurrent event is explained below.
It will be appreciated that the distribution of lines and devices on a circuit board is intricate and therefore, the presence of the following lines or devices is inevitable: the current direction of the current flowing through the circuit or the device is opposite to the current direction of the protection unit, and the current and the large current of the protection unit during overcurrent protection form mutually offset magnetic fields, so that the first sensor and the second sensor cannot monitor the overcurrent event, the judgment is missed, and the monitoring accuracy is reduced. In this regard, when the circuits and devices on the circuit board are designed in a distributed manner, the current paths provided by the circuits and devices should avoid as much as possible the current path having the current direction opposite to the current direction of the protection unit from approaching the protection unit.
For example, taking the protection unit of the first circuit unit 10 as an example, when the protection unit is wired, the current direction of the current path S + connected to the second end IN2 of the protection unit and the current direction of the current path S-connected to the first end IN1 of the protection unit may not be opposite to the current direction of the protection unit. It should be understood that, in the present embodiment, the current path S + may be: a path from the second terminal IN2 of the protection unit to a reference ground (for zero-potential reference, usually a large-area copper layer) of the circuit board; the current path S-may be: and the path from the first end IN1 of the protection unit to the output end of the power supply module or the path from the first end IN1 of the protection unit to the signal end of the protected circuit of other circuit units.
For example, fig. 4 is a diagram illustrating a planar routing distribution of the protection unit of the first circuit unit 10. IN the figure, the current path S + connected to the second terminal IN2 of the protection unit, the current path S-connected to the first terminal IN1 of the protection unit, and the current path of the protection unit are on the same plane, and can be understood as being located on the same layer of the circuit board. Among them, fig. 4 (a) to 4 (d) illustrate four planar distribution examples IN which the direction of the current path S + to which the second terminal IN2 of the shield unit of the first circuit unit 10 is connected (S + direction indicated by the solid line with an arrow IN the figure) and the direction of the current path S-to which the first terminal IN1 of the shield unit is connected (S-direction indicated by the solid line with an arrow IN the figure) are not opposite to the direction of the current of the shield unit (S direction indicated by the solid line with an arrow IN the figure). Of course, in other embodiments, other plane distribution manners may also be adopted, and this is not specifically limited in this application embodiment.
For another example, fig. 5 is a three-dimensional routing distribution example of the protection unit of the first circuit unit 10. This drawing can be understood as a sectional view obtained by cutting the circuit board in the thickness direction. IN the figure, the current path S + connected to the second terminal IN2 of the protection unit and the protection unit are located on the same layer, i.e. on the same plane, of the circuit board, and the current path S-connected to the first terminal IN1 of the protection unit is located on other layers of the circuit board.
As shown IN fig. 5 (a), the current direction of the current path S-to which the first terminal IN1 of the shield unit is connected (S-direction indicated by solid line with arrow IN the figure), the current direction of the current path S + to which the second terminal IN2 of the shield unit is connected (S + direction indicated by solid line with arrow IN the figure), and the current direction of the shield unit (S direction indicated by solid line with arrow IN the figure) are all the same, and thus there is no magnetic field cancellation.
IN the above example, when the current direction of the current path S-connected to the first terminal IN1 of the guard unit is inevitably opposite to the current direction of the current path S + connected to the second terminal IN2 of the guard unit, the current path S-connected to the first terminal IN1 of the guard unit may be as far away from the current path S + connected to the second terminal IN2 of the guard unit as possible. This is exemplified by (b) in fig. 5.
As shown IN (b) of fig. 5, the current direction of the current path S + to which the second end IN2 of the shield unit is connected (S + direction indicated by a solid line with an arrow IN the figure) and the current direction of the shield unit (S direction indicated by a solid line with an arrow IN the figure) are the same, but the current direction of the current path S-to which the first end IN1 of the shield unit is connected (S-direction indicated by a solid line with an arrow IN the figure) is opposite to the current direction of the shield unit (S direction indicated by a solid line with an arrow IN the figure), IN which case the current path S-to which the first end IN1 of the shield unit is connected may be provided IN a layer on the circuit board farther from the current path S + to which the second end IN2 of the shield unit is connected on the basis of (a) of fig. 5.
The above example takes the routing of the guard unit of the first circuit unit 10 as an example. It should be understood that, among the current paths provided by the lines and devices, a current path having a current direction opposite to that of the protection unit may also be provided by other lines and devices on the circuit board. These lines and devices may be located on the same layer of the circuit board as the guard unit or on a different layer. When these lines and devices are provided, the distance from the current path of the shield unit is kept as much as possible in the longitudinal direction (the thickness direction of the circuit board) and the lateral direction (the direction in which the board surface of the circuit board extends). In addition, in the current paths provided by other lines and devices close to the protection unit, the current direction of the current paths is not opposite to that of the current paths of the protection unit as much as possible, and the distance can be kept as much as possible when the current paths are unavoidable.
The process of determining an overcurrent event by the processing unit based on data collected by a single monitoring unit is described in connection with fig. 6. Referring to fig. 6, fig. 6 is a flowchart illustrating a processing unit determining an overcurrent event according to an embodiment of the disclosure. The process of the processing unit determining the overcurrent event includes the following steps S601 to S604:
s601, receiving first magnetic field data uploaded by a first sensor and second magnetic field data uploaded by a second sensor from a monitoring unit.
And after receiving the first magnetic field data and the second magnetic field data, writing the first magnetic field data and the second magnetic field data into a register for calling and analyzing by a processing unit.
S602, it is determined whether the magnetic field directions indicated by the first magnetic field data and the second magnetic field data are opposite.
If yes, continue to execute S603, otherwise, clear the register and continue to monitor.
It should be noted that, in the embodiment shown in fig. 1, it has been described how to determine whether the magnetic field directions indicated by the first magnetic field data and the second magnetic field data are opposite, and details are not repeated here.
S603, determining whether the first magnetic field data and the second magnetic field data are two data within a preset time period.
If yes, go to S604; if not, the register is emptied and monitoring is continued.
It should be noted that, in the embodiment shown in fig. 1, it has been described how to determine whether the first magnetic field data and the second magnetic field data are two data within a preset time period, and details are not repeated here. In addition, the order of S602 and S603 may be exchanged, which is not specifically limited in this embodiment of the application.
And S604, determining that the overcurrent event occurs in the circuit unit corresponding to the monitoring unit.
After S604, the processor may further determine the circuit unit corresponding to the monitoring unit as the occurrence position of the overcurrent event, and record the occurrence time of the overcurrent event, which is not specifically limited in this embodiment of the application.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A monitoring circuit for monitoring an over-current event of a circuit unit; the circuit unit comprises a protection unit and a protected circuit, and the protection unit is used for overcurrent protection of the protected circuit; the monitoring circuit includes:
the monitoring unit is used for monitoring the protection unit; the monitoring unit comprises a first sensor and a second sensor;
the first sensor is used for being arranged on a first side of the protection unit, and the second sensor is used for being arranged on a second side of the protection unit; the arrangement direction of the first sensor and the second sensor is perpendicular to the current path of the protection unit; the first sensor is configured to acquire first magnetic field data indicative of a magnetic field direction of a magnetic field at the first sensor; the second sensor is configured to acquire second magnetic field data indicative of a magnetic field direction of the magnetic field at the second sensor;
and the processing unit is connected with the first sensor and the second sensor and is used for receiving the first magnetic field data and the second magnetic field data, and if the magnetic field direction indicated by the first magnetic field data is opposite to the magnetic field direction indicated by the second magnetic field data, the overcurrent event of the circuit unit where the protection unit is located is determined.
2. The monitoring circuit of claim 1, wherein the processing unit is further configured to determine that the first magnetic field data and the second magnetic field data are two data within a preset time period before the processing unit determines that the overcurrent event occurs in the circuit unit where the protection unit is located.
3. The monitoring circuit of claim 2, wherein the first magnetic field data and the second magnetic field data are collected with a time difference within the preset time period.
4. The monitoring circuit of claim 2, wherein the first magnetic field data and the second magnetic field data are two data received by the processing unit within the preset time period.
5. The monitoring circuit according to any one of claims 1 to 4, wherein the circuit unit is plural; the number of the monitoring units is multiple; the guarded circuit comprises at least one guarded port; a single said circuit cell includes at least one said guard cell; one said protection unit for overcurrent protection of one said protected port; one of the monitoring units monitors one of the protection units applied to one of the circuit units;
the processing unit is connected with the first sensor and the second sensor of each monitoring unit, and is further used for outputting the circuit unit where the protection unit is located, which is monitored by the target monitoring unit, as the occurrence position of the overcurrent event;
the target monitoring unit is a monitoring unit which is opposite to the magnetic field direction indicated by the first magnetic field data acquired by the first sensor and the magnetic field direction indicated by the second magnetic field data acquired by the second sensor in the plurality of monitoring units.
6. The monitoring circuit of any one of claims 1 to 5, wherein the first sensor and the second sensor are both Hall sensors.
7. The monitoring circuit of any one of claims 1 to 6, wherein the guard unit is spaced from the first sensor by no more than a first predetermined distance and the guard unit is spaced from the second sensor by no more than a second predetermined distance.
8. A monitoring system, comprising:
a circuit unit; the circuit unit comprises a protection unit and a protected circuit, and the protection unit is used for overcurrent protection of the protected circuit;
a monitoring circuit as claimed in any one of claims 1 to 7 for monitoring the protection unit in the circuit unit.
9. The monitoring system of claim 8, wherein the protection unit is a TVS diode or a Zener diode.
10. The monitoring system of claim 9, wherein a cathode of the protection unit is connected to a protected port of the protected circuit and an anode of the protection unit is connected to a ground of the protected circuit.
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