CN115616036B - Characterization method, device and equipment for tunneling oxide layer and readable storage medium - Google Patents
Characterization method, device and equipment for tunneling oxide layer and readable storage medium Download PDFInfo
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- 230000005641 tunneling Effects 0.000 title claims abstract description 243
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 120
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- 239000010703 silicon Substances 0.000 claims abstract description 107
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- 238000002161 passivation Methods 0.000 description 13
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- 238000010998 test method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 238000004364 calculation method Methods 0.000 description 8
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- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
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Abstract
The application discloses a characterization method, a characterization device, characterization equipment and a readable storage medium for a tunneling oxide layer, wherein the method comprises the following steps: obtaining the sheet resistance of a silicon substrate, the sheet resistance of a structural body and the sheet resistance of a polycrystalline silicon layer in the TOPCon battery; the structure comprises a silicon substrate, a tunneling oxide layer positioned on the surface of the silicon substrate and a polycrystalline silicon layer positioned on the surface of the tunneling oxide layer; obtaining the square resistance of the tunneling oxide layer according to the square resistance of the silicon substrate, the square resistance of the structure body and the square resistance of the polycrystalline silicon layer; and analyzing the sheet resistance of the tunneling oxide layer to obtain a characterization result of the tunneling oxide layer. According to the technical scheme, the sheet resistance of the structure related to the tunneling oxide layer in the TOPCon battery is obtained, the sheet resistance of the tunneling oxide layer is obtained based on the sheet resistances, the sheet resistance of the tunneling oxide layer is analyzed to obtain the characterization result of the tunneling oxide layer, the structure of the battery is not required to be damaged, and the tunneling oxide layer can be accurately characterized.
Description
Technical Field
The present application relates to the field of solar cell technologies, and in particular, to a method, an apparatus, a device, and a readable storage medium for characterizing a tunneling oxide layer.
Background
Compared with other types of batteries, the TOPCon battery technology can improve the open-circuit voltage and the fill factor of the battery and greatly improve the conversion rate of photovoltaic. Taking an N-type TOPCon battery as an example, the N-type TOPCon battery production and sales rate of each large battery manufacturer exceeds 24.1%, and each technical success in the industry indicates that the N-type TOPCon battery has the potential of impacting a high-efficiency battery and also has the possibility of large-scale quantification. Currently, the laboratory efficiency of HJT (heterojunction cell) is only 25.54% higher than that of N-type TOPCon cell by 0.45%, but the cost of HJT cell is much higher than that of N-type TOPCon cell. In the foreseeable future of the photovoltaic industry, the N-type TOPCon battery is still the preferred alternative to the PERC battery to realize mass production.
For an N-type TOPCon cell having a contact passivation layer formed by a tunnel oxide layer and N + poly (phosphorus-doped N-type polysilicon layer) on the back side and a P-type TOPCon cell having a contact passivation layer formed by a tunnel oxide layer and P + poly (boron-doped P-type polysilicon layer) on the back side, an ECV (Electrochemical Capacitance-voltage) test method and an ellipsometer test method are mainly used for characterizing the tunnel oxide layer. However, the ECV test method is a destructive method, i.e. the tested battery plate cannot participate in the finished product process again; the ellipsometer test method cannot accurately represent the tunneling oxide layer due to the limitation of a self-calculation model of the test equipment, inevitable oxidation of the tunneling oxide layer in the test and other factors.
In summary, how to accurately characterize the tunnel oxide layer without damaging the cell structure of the TOPCon cell is a technical problem to be solved by those skilled in the art.
Disclosure of Invention
In view of the above, an object of the present application is to provide a method, an apparatus, a device and a readable storage medium for characterizing a tunnel oxide layer, which can accurately characterize the tunnel oxide layer without destroying the cell structure of a TOPCon cell.
In order to achieve the above purpose, the present application provides the following technical solutions:
a tunneling oxide layer characterization method comprises the following steps:
obtaining the sheet resistance of a silicon substrate, the sheet resistance of a structural body and the sheet resistance of a polycrystalline silicon layer in the TOPCon battery; the structure body comprises the silicon substrate, a tunneling oxide layer positioned on the surface of the silicon substrate and the polycrystalline silicon layer positioned on the surface of the tunneling oxide layer;
obtaining the square resistance of the tunneling oxide layer according to the square resistance of the silicon substrate, the square resistance of the structure body and the square resistance of the polycrystalline silicon layer;
and analyzing the sheet resistance of the tunneling oxide layer to obtain a characterization result of the tunneling oxide layer.
Preferably, obtaining the sheet resistance of the tunneling oxide layer according to the sheet resistance of the silicon substrate, the sheet resistance of the structure body, and the sheet resistance of the polysilicon layer includes:
by using
Calculating the sheet resistance of the tunneling oxide layer;
wherein the content of the first and second substances,
is a square block of the structure body, is combined with a water tank>
Is the sheet resistance of the polysilicon layer>
Is the sheet resistance of the tunneling oxide layer->
Based on the function of the sheet resistance of the tunneling oxide>
Is the sheet resistance of the silicon substrate.
Preferably, use is made of
Calculating the sheet resistance of the tunneling oxide layer, including:
will be provided with
Is converted into->
；
By using
And calculating the sheet resistance of the tunneling oxide layer.
Preferably, analyzing the sheet resistance of the tunneling oxide layer to obtain a characterization result of the tunneling oxide layer includes:
comparing the sheet resistance of the tunneling oxide layer with a standard sheet resistance, and obtaining a representation result of the tunneling oxide layer according to a comparison result; the quality of the tunneling oxide layer with the sheet resistance smaller than the standard sheet resistance is higher than that of the tunneling oxide layer with the sheet resistance not smaller than the standard sheet resistance.
Preferably, obtaining the sheet resistance of the silicon substrate, the sheet resistance of the structure body and the sheet resistance of the polysilicon layer in the TOPCon battery comprises:
and measuring and obtaining the square resistance of the silicon substrate, the square resistance of the structure body and the square resistance of the polycrystalline silicon layer in the TOPCon battery by using a four-probe square resistance tester.
Preferably, obtaining the sheet resistance of the polysilicon layer includes:
obtaining the square resistance of an auxiliary structure body to obtain the square resistance of a polycrystalline silicon layer in the auxiliary structure body; the auxiliary structure body comprises a silicon substrate which is different from the silicon substrate in the structure body in type, a tunneling oxide layer which is the same as the tunneling oxide layer in structure, and a polycrystalline silicon layer which is the same as the polycrystalline silicon layer in the structure body in structure, wherein the silicon substrate in the auxiliary structure body and the polycrystalline silicon layer in the auxiliary structure body form a PN junction;
and taking the sheet resistance of the polycrystalline silicon layer in the auxiliary structure body as the sheet resistance of the polycrystalline silicon layer in the TOPCon battery.
Preferably, after analyzing the sheet resistance of the tunneling oxide layer to obtain a characterization result of the tunneling oxide layer, the method further includes:
and outputting the sheet resistance and the characterization result of the tunneling oxide layer.
A tunneling oxide characterization apparatus, comprising:
the acquisition module is used for acquiring the sheet resistance of a silicon substrate, the sheet resistance of a structural body and the sheet resistance of a polycrystalline silicon layer in the TOPCon battery; the structure body comprises the silicon substrate, a tunneling oxide layer positioned on the surface of the silicon substrate and the polycrystalline silicon layer positioned on the surface of the tunneling oxide layer;
the obtaining module is used for obtaining the square resistance of the tunneling oxide layer according to the square resistance of the silicon substrate, the square resistance of the structure body and the square resistance of the polycrystalline silicon layer;
and the analysis module is used for analyzing the sheet resistance of the tunneling oxide layer to obtain a characterization result of the tunneling oxide layer.
A tunneling oxide layer characterization apparatus, comprising:
a memory for storing a computer program;
a processor, configured to implement the steps of the tunnel oxide layer characterization method according to any one of the above embodiments when the computer program is executed.
A readable storage medium, in which a computer program is stored, which computer program, when being executed by a processor, carries out the steps of the tunnel oxide layer characterization method according to any one of the preceding claims.
The application provides a characterization method, a characterization device, characterization equipment and a readable storage medium for a tunneling oxide layer, wherein the method comprises the following steps: obtaining the sheet resistance of a silicon substrate, the sheet resistance of a structural body and the sheet resistance of a polycrystalline silicon layer in the TOPCon battery; the structure comprises a silicon substrate, a tunneling oxide layer positioned on the surface of the silicon substrate and a polycrystalline silicon layer positioned on the surface of the tunneling oxide layer; obtaining the square resistance of the tunneling oxide layer according to the square resistance of the silicon substrate, the square resistance of the structure body and the square resistance of the polycrystalline silicon layer; and analyzing the sheet resistance of the tunneling oxide layer to obtain a characterization result of the tunneling oxide layer.
According to the technical scheme disclosed by the application, the square resistance of a silicon substrate in the TOPCon battery, the square resistance of a structure body formed by the silicon substrate, a tunneling oxide layer positioned on the surface of the silicon substrate and a polycrystalline silicon layer positioned on the surface of the tunneling oxide layer and the square resistance of the polycrystalline silicon layer are obtained. And then, obtaining the square resistance of the tunneling oxide layer according to the square resistance of the silicon substrate, the square resistance of the structure body and the square resistance of the polycrystalline silicon, and analyzing the square resistance of the tunneling oxide layer to obtain a characterization result of the tunneling oxide layer in the TOPCon battery. According to the TOPCon battery, the sheet resistance of the structure related to the tunneling oxide layer in the TOPCon battery is obtained, the sheet resistance of the tunneling oxide layer is obtained based on the sheet resistances, the sheet resistance of the tunneling oxide layer is analyzed to obtain the characterization result of the tunneling oxide layer, the structure of the TOPCon battery is not required to be damaged, and the tunneling oxide layer can be accurately characterized.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a tunneling oxide layer characterization method according to an embodiment of the present disclosure;
fig. 2 is a flow chart of the preparation of a TOPCon battery according to an embodiment of the present disclosure;
fig. 3 is a schematic diagram of a topocon battery sheet resistance test provided in an embodiment of the present application;
fig. 4 is a schematic diagram of a tunnel oxide characterization model provided in an embodiment of the present application;
fig. 5 is a schematic structural diagram of a tunneling oxide characterization device according to an embodiment of the present disclosure;
fig. 6 is a schematic structural diagram of a tunneling oxide layer characterization apparatus according to an embodiment of the present application.
Detailed Description
At present, characterization of a tunneling oxide layer in a TOPCon battery is mainly realized by an ECV test method and an ellipsometer test method.
The ECV test method is characterized in that an electrolyte is utilized to form a potential barrier, forward bias (p type) or reverse bias (n type and illumination) is applied to a semiconductor to carry out surface corrosion to remove an electrolyzed material, a measuring curve is obtained by repeating ' corrosion-measuring ' circulation through an automatic device, then, the Faraday's law is applied to carry out integration on corrosion current, and the corrosion depth is continuously obtained. Therefore, the ECV test method is a destructive method, and the tested battery piece can not participate in the finished product process.
The ellipsometer is an instrument for measuring the characteristics of a thin film, and can measure the thickness, refractive index, surface roughness, lattice structure, anisotropy and the like of the thin film, but the ellipsometer cannot directly obtain the parameters, the parameters can be obtained only through data fitting, and an adopted model is very important when the data fitting is carried out. When the ellipsometer test method is used to characterize the tunnel oxide layer, the tunnel oxide layer in the TOPCon cell needs to be exposed (if the tunnel oxide layer is exposed, the oxidation problem cannot be avoided) for testing. Therefore, the ellipsometer test method cannot accurately represent the tunneling oxide layer due to the limitations of the test equipment self-calculation model and the influence of factors such as inevitable oxidation of the tunneling oxide layer in the test process.
Therefore, the application provides a characterization method, a device, equipment and a readable storage medium for a tunneling oxide layer, which are used for not only not damaging the cell structure of the TOPCon cell, but also accurately characterizing the tunneling oxide layer.
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1 and fig. 2, in which fig. 1 shows a schematic structural diagram of a tunneling oxide layer characterization method provided in an embodiment of the present application, and fig. 2 shows a flow chart of a TOPCon cell provided in an embodiment of the present application. The characterization method for the tunneling oxide layer provided by the embodiment of the application can include the following steps:
s11: obtaining the sheet resistance of a silicon substrate, the sheet resistance of a structural body and the sheet resistance of a polycrystalline silicon layer in the TOPCon battery; the structure body comprises a silicon substrate, a tunneling oxide layer positioned on the surface of the silicon substrate and a polycrystalline silicon layer positioned on the surface of the tunneling oxide layer.
In the preparation process of the TOPCon cell to be characterized, the sheet resistance of the silicon substrate may be measured before the tunneling oxide layer is deposited on the silicon substrate, and the measured sheet resistance of the silicon substrate is sent to a tunneling oxide layer characterization device (such as a computer, etc.), and the sheet resistance of the silicon substrate is obtained by the tunneling oxide layer characterization device. Or, if the tunneling oxide layer characterization device has the function of measuring the sheet resistance, the sheet resistance of the silicon substrate in the TOPCon battery is directly measured and obtained by the tunneling oxide layer characterization device. Fig. 2 illustrates an example of a process for manufacturing an N-type TOPCon battery.
In addition, in the preparation process of the TOPCon battery, after the tunneling oxide layer and the polysilicon layer are deposited on the surface of the silicon substrate (namely, the structure body is obtained), the sheet resistance of the structure body can be measured, and the measured sheet resistance of the structure body is sent to the tunneling oxide layer characterization device, so that the tunneling oxide layer characterization device obtains the sheet resistance of the structure body. Likewise, if the tunnel oxide characterization device has the function of measuring the sheet resistance, the sheet resistance of the structural body in the TOPCon cell can be measured and obtained directly by the tunnel oxide characterization device. In the structure, the silicon substrate and the polysilicon layer (specifically, doped polysilicon layer) are of the same type, specifically, both N-type (at this time, the silicon substrate is an N-type silicon substrate, the polysilicon layer is an N + polysilicon layer, and the TOPCon battery is an N-type TOPCon battery) or both P-type (at this time, the silicon substrate is a P-type silicon substrate, the polysilicon layer is a P + polysilicon layer, and the TOPCon battery is a P-type TOPCon battery) so that high and low junctions are formed between the silicon substrate and the polysilicon layer, and thus, when the sheet resistance is measured, the current can pass through both the polysilicon layer and the silicon substrate (the current can pass through the high and low junctions), so as to really obtain the sheet resistance of the structure.
In addition, the sheet resistance of the polysilicon layer on the surface of the tunneling oxide layer in the TOPCon cell can be measured and obtained, so that the sheet resistance of the tunneling oxide layer can be calculated and obtained based on the sheet resistance of the silicon substrate, the sheet resistance of the structure body and the sheet resistance of the polysilicon layer.
S12: and obtaining the square resistance of the tunneling oxide layer according to the square resistance of the silicon substrate, the square resistance of the structure body and the square resistance of the polycrystalline silicon layer.
On the basis of the step S11, the sheet resistance of the tunneling oxide layer may be calculated according to the sheet resistance of the silicon substrate, the sheet resistance of the structure body, and the sheet resistance of the polysilicon layer, so as to obtain the sheet resistance of the tunneling oxide layer based on the sheet resistance of the structure related to the tunneling oxide layer in the TOPCon cell, thereby facilitating the characterization of the tunneling oxide layer based on the obtained sheet resistance of the tunneling oxide layer.
S13: and analyzing the sheet resistance of the tunneling oxide layer to obtain a characterization result of the tunneling oxide layer.
On the basis of step S12, the obtained sheet resistance of the tunneling oxide layer may be analyzed, and a characterization result of the tunneling oxide layer is obtained through the analysis.
Compared with the ECV test method, the method has the advantages that the sheet resistance is tested and analyzed in the preparation process of the TOPCon battery to realize the characterization of the tunneling oxide layer, the TOPCon battery is not required to be damaged, and the characterized TOPCon battery can also participate in the manufacturing process of finished products. Compared with ellipsometer testing, the method obtains the sheet resistance of the tunneling oxide layer in the TOPCon battery, obtains the sheet resistance of the tunneling oxide layer based on the sheet resistance of the tunneling oxide layer obtained through calculation, obtains the characterization result of the tunneling oxide layer based on the sheet resistance of the tunneling oxide layer obtained through calculation, is not affected by a calculation model of testing equipment, and can avoid the influence of oxidation of the tunneling oxide layer on characterization due to no need of exposing the tunneling oxide layer for characterization, so that the characterization accuracy of the tunneling oxide layer can be improved.
According to the technical scheme disclosed by the application, the square resistance of a silicon substrate in the TOPCon battery, the square resistance of a structure body formed by the silicon substrate, a tunneling oxide layer positioned on the surface of the silicon substrate and a polycrystalline silicon layer positioned on the surface of the tunneling oxide layer and the square resistance of the polycrystalline silicon layer are obtained. And then, obtaining the square resistance of the tunneling oxide layer according to the square resistance of the silicon substrate, the square resistance of the structure body and the square resistance of the polycrystalline silicon, and analyzing the square resistance of the tunneling oxide layer to obtain a characterization result of the tunneling oxide layer in the TOPCon battery. According to the TOPCon battery and the method for representing the TOPCon battery, the sheet resistance of the structure related to the tunneling oxide layer in the TOPCon battery is obtained, the sheet resistance of the tunneling oxide layer is obtained based on the sheet resistances, the sheet resistance of the tunneling oxide layer is analyzed to obtain the representation result of the tunneling oxide layer, the structure of the TOPCon battery is not required to be damaged, and the tunneling oxide layer can be accurately represented.
The characterization method for the tunneling oxide layer provided in the embodiment of the present application obtains the sheet resistance of the tunneling oxide layer according to the sheet resistance of the silicon substrate, the sheet resistance of the structure body, and the sheet resistance of the polysilicon layer, and may include:
by using
Calculating the sheet resistance of the tunneling oxide layer;
wherein the content of the first and second substances,
is a square block of the structure body>
Is the sheet resistance of the polysilicon layer>
Is the sheet resistance of the tunneling oxide layer,
based on the function of the sheet resistance of the tunneling oxide layer>
Is the sheet resistance of the silicon substrate.
Specifically, reference may be made to fig. 3 and fig. 4, where fig. 3 shows a schematic diagram of a topocon battery sheet resistance test provided in an embodiment of the present application, and fig. 4 shows a schematic diagram of a tunnel oxide layer characterization model provided in an embodiment of the present application. Sheet resistance of silicon substrate
And square resistance of structure body>
And square resistance of tunneling oxide layer->
There is the following relationship between:
therefore, the sheet resistance of the tunnel oxide may be calculated by this relationship>
. Wherein, the first and the second end of the pipe are connected with each other,
as a function of the sheet resistance of the tunnel oxide layer.
When the sheet resistance of the tunneling oxide layer is calculated through the relationship, the sheet resistance is calculated due to the fact that
Therefore, the sheet resistances of the silicon substrate, the structural body and the polysilicon layer in a plurality of top con cells (the tunnel oxide layers are identical in structure) of the same type can be measured, so as to calculate the sheet resistance of the tunnel oxide layers in the top con cells based on the sheet resistances of the top con cells of the same type.
The characterization method of the tunneling oxide layer provided by the embodiment of the application utilizes
Calculating the sheet resistance of the tunneling oxide layer may include: />
Will be provided with
Is converted into->
；
By using
And calculating the sheet resistance of the tunneling oxide layer.
In the present application, use is being made of
When calculating the sheet resistance of a tunnel oxide, it may particularly be &>
Idealized become->
Then, utilize
And calculating the sheet resistance of the tunneling oxide layer to improve the simplicity and convenience of calculation of the sheet resistance of the tunneling oxide layer.
The characterization method for the tunneling oxide layer provided in the embodiment of the present application analyzes the sheet resistance of the tunneling oxide layer to obtain the characterization result of the tunneling oxide layer, and may include:
comparing the sheet resistance of the tunneling oxide layer with the standard sheet resistance, and obtaining a characterization result of the tunneling oxide layer according to the comparison result; the quality of the tunneling oxide layer with the sheet resistance smaller than the standard sheet resistance is higher than that of the tunneling oxide layer with the sheet resistance not smaller than the standard sheet resistance.
When analyzing the tunneling oxide layer, the sheet resistance of the tunneling oxide layer may be specifically compared with the standard sheet resistance, so as to obtain a characterization result of the tunneling oxide layer according to the comparison result. Specifically, different experiments may be performed in advance for obtaining the standard sheet resistance (that is, a plurality of TOPCon batteries may be prepared, the TOPCon batteries have different tunnel oxide layer structures and the rest of the TOPCon batteries have the same structure), the passivation effect of the tunnel oxide layer corresponding to each experiment is obtained, and the standard sheet resistance is obtained accordingly.
And when the representation result of the tunneling oxide layer is obtained according to the comparison result, the quality of the tunneling oxide layer with the sheet resistance smaller than the standard sheet resistance is higher than that of the tunneling oxide layer with the sheet resistance not smaller than the standard sheet resistance. Specifically, if the sheet resistance of the tunneling oxide layer is smaller than the standard sheet resistance, a characterization result of high quality of the tunneling oxide layer (specifically, the tunneling oxide layer is thin, and the passivation effect of the tunneling oxide layer is good) is obtained, and if the sheet resistance of the tunneling oxide layer is not smaller than the standard sheet resistance, a characterization result of low quality of the tunneling oxide layer (specifically, the tunneling oxide layer is thick, and the passivation effect of the tunneling oxide layer is poor) is obtained, that is, the quality of the tunneling oxide layer can be characterized through the sheet resistance of the tunneling oxide layer, so as to provide a certain technical support for the design of experiments in the research and development and mass production processes.
The characterization method for a tunneling oxide layer provided in the embodiment of the present application obtains a sheet resistance of a silicon substrate, a sheet resistance of a structure body, and a sheet resistance of a polysilicon layer in a TOPCon cell, and may include:
the square resistance of the silicon substrate, the square resistance of the structure body and the square resistance of the polycrystalline silicon layer in the TOPCon battery are measured and obtained by a four-probe square resistance tester.
In the present application, the sheet resistance of the silicon substrate, the sheet resistance of the structure body, and the sheet resistance of the polysilicon layer in the TOPCon battery may be obtained by using a four-probe sheet resistance tester, and then, the tunnel oxide layer characterization device may obtain the sheet resistance of the silicon substrate, the sheet resistance of the structure body, and the sheet resistance of the polysilicon layer in the TOPCon battery measured by the four-probe sheet resistance tester.
The four-probe sheet resistance tester is multipurpose comprehensive measuring equipment applying a four-probe measuring principle and is a special instrument specially used for measuring the resistivity and sheet resistance of a semiconductor material.
The method for characterizing a tunneling oxide layer provided in the embodiment of the present application, obtaining a sheet resistance of a polysilicon layer, may include:
acquiring the square resistance of an auxiliary structure body to obtain the square resistance of a polycrystalline silicon layer in the auxiliary structure body; the auxiliary structure body can comprise a silicon substrate which is different from the silicon substrate in the structure body in type, a tunneling oxide layer which is the same as the tunneling oxide layer in structure body in structure, and a polycrystalline silicon layer which is the same as the polycrystalline silicon layer in the structure body in structure, wherein the silicon substrate in the auxiliary structure body and the polycrystalline silicon layer in the auxiliary structure body form a PN junction;
the sheet resistance of the polysilicon layer in the second structure was taken as the sheet resistance of the polysilicon layer in the TOPCon cell.
In the present application, for the acquisition of the sheet resistance of the polycrystalline silicon layer in the TOPCon cell, it is possible to prepare an auxiliary structural body corresponding to the structural body in the TOPCon cell to be characterized in particular. The auxiliary structure body comprises a silicon substrate which is different from a silicon substrate in the structure body in type, specifically, if the silicon substrate in the structure body is of an N type, the silicon substrate in the auxiliary structure body is of a P type, and if the silicon substrate in the structure body is of a P type, the silicon substrate in the auxiliary structure body is of an N type. The auxiliary structure body includes a tunnel oxide layer having the same structure as the tunnel oxide layer in the structure body (that is, the production conditions adopted by the tunnel oxide layer in the auxiliary structure body are the same as the production conditions adopted by the tunnel oxide layer in the structure body), the auxiliary structure body includes a polysilicon layer having the same structure as the polysilicon layer in the structure body (that is, the production conditions adopted by the polysilicon layer in the auxiliary structure body are the same as the production conditions adopted by the polysilicon layer in the structure body, the type of the polysilicon layer in the auxiliary structure body is the same as the type of the polysilicon layer in the structure body, and the polysilicon layer is N-type (N +) or P-type (P +) in a TOPCon battery), and the polysilicon layer in the auxiliary structure body form a PN junction.
Since the silicon substrate in the auxiliary structure and the polysilicon layer in the auxiliary structure form a PN junction, the current does not pass through the PN junction but only through the polysilicon layer during the sheet resistance measurement, and thus the sheet resistance of the polysilicon layer in the auxiliary structure can be obtained by performing the sheet resistance measurement on the auxiliary structure (that is, the obtained sheet resistance of the auxiliary structure is the sheet resistance of the polysilicon layer in the auxiliary structure). And because the structures of the tunneling oxide layer and the polysilicon layer in the auxiliary structure body are the same as those of the tunneling oxide layer and the polysilicon layer in the structure body, the square resistance of the polysilicon layer in the obtained auxiliary structure body can be used as the square resistance of the polysilicon layer in the TOPCon battery to be characterized.
By the method, the convenience of obtaining the sheet resistance of the polycrystalline silicon layer in the TOPCon battery can be improved.
The characterization method for the tunneling oxide layer provided in the embodiment of the present application, after analyzing the sheet resistance of the tunneling oxide layer to obtain the characterization result of the tunneling oxide layer, may further include:
and outputting the sheet resistance and the characterization result of the tunneling oxide layer.
In the application, after the square resistance of the tunneling oxide layer is analyzed to obtain the characterization result of the tunneling oxide layer, the square resistance and the characterization result of the tunneling oxide layer can be output, so that related personnel can obtain the square resistance and the characterization result of the tunneling oxide layer.
For a more detailed description of the present application, reference may be made to the following two specific examples:
the first embodiment is as follows:
(1) Before the growth of a back side tunneling contact passivation layer (namely a tunneling oxide layer and a polycrystalline silicon layer), the square resistance R of the silicon substrate is measured by using a four-probe square resistance tester 3 Is 79.23 omega/sq;
(2) In the process of making the back tunneling contact passivation layer of the N-type TopCon battery, a P-type alkali polishing piece is put in, namely a P-type silicon substrate is put in. Under the same process condition, growing a tunneling contact passivation layer on the P-type alkali polished wafer;
(3) After the growth of the tunneling contact passivation layer is finished, the square resistance R of the P-type alkali polished wafer is measured by using a four-probe square resistance tester 1 At 146 omega/sq, the sheet resistance R of the back of the N-type TopCon cell was tested 0 Is 51.43 omega/sq;
(4) According to the calculation model 1/R 0 =1/R 1 +1/(2R 2 +R 3 ) Calculating the sheet resistance R of the tunneling oxide layer 2 Is 0.085 omega/sq;
the second embodiment is as follows:
(1) Before the growth of the back tunneling contact passivation layer, the square resistance R of the silicon substrate is measured by using a four-probe square resistance tester 3 Is 79.23 omega/sq;
(2) In the process of making the back tunneling contact passivation layer of the N-type TopCon battery, a P-type alkali polishing sheet is put in. Under the same process condition, growing a tunneling contact passivation layer on the P-type alkali polished wafer;
(3) After the growth of the tunneling contact passivation layer is finished, the square resistance R of the P-type alkali polished wafer is measured by using a four-probe square resistance tester 1 At 146 omega/sq, the sheet resistance R of the back of the N-type TopCon cell was tested 0 Is 54.43 omega/sq;
(4) According to the calculation model 1/R 0 =1/R 1 +1/(2R 2 +R 3 ) Calculating the sheet resistance R of the tunneling oxide layer 2 It was 3.77. Omega./sq.
An embodiment of the present application further provides a tunneling oxide layer characterization device, and referring to fig. 5, a schematic structural diagram of the tunneling oxide layer characterization device provided in the embodiment of the present application is shown, where the schematic structural diagram may include:
an obtaining module 51, configured to obtain a sheet resistance of a silicon substrate, a sheet resistance of a structural body, and a sheet resistance of a polysilicon layer in the TOPCon battery; the structure body can comprise a silicon substrate, a tunneling oxide layer positioned on the surface of the silicon substrate and a polycrystalline silicon layer positioned on the surface of the tunneling oxide layer;
a obtaining module 52, configured to obtain a sheet resistance of the tunneling oxide layer according to the sheet resistance of the silicon substrate, the sheet resistance of the structure, and the sheet resistance of the polysilicon layer;
and the analysis module 53 is configured to analyze the sheet resistance of the tunneling oxide layer to obtain a characterization result of the tunneling oxide layer.
The tunneling oxide layer characterization apparatus provided in the embodiment of the present application, the obtaining module 52 may include:
a computing unit for utilizing
Calculating the sheet resistance of the tunneling oxide layer;
wherein the content of the first and second substances,
is a square block of the structure body>
Is the sheet resistance of the polysilicon layer>
By tunneling through the oxide layerThe square resistance is set on the surface of the steel plate,
based on the function of the sheet resistance of the tunneling oxide layer>
Is the sheet resistance of the silicon substrate.
In an embodiment of the apparatus for characterizing a tunneling oxide layer, a computing unit may include:
a conversion subunit for converting
Convert into->
；
A computing subunit for utilizing
And calculating the sheet resistance of the tunneling oxide layer.
In the tunneling oxide layer characterization apparatus provided in the embodiment of the present application, the analysis module 53 may include:
the comparison unit is used for comparing the sheet resistance of the tunneling oxide layer with the standard sheet resistance and obtaining the representation result of the tunneling oxide layer according to the comparison result; the quality of the tunneling oxide layer with the sheet resistance smaller than the standard sheet resistance is higher than that of the tunneling oxide layer with the sheet resistance not smaller than the standard sheet resistance.
In the tunneling oxide layer characterization apparatus provided in the embodiment of the present application, the obtaining module 51 may include:
and the measurement acquisition unit is used for measuring and acquiring the sheet resistance of the silicon substrate, the sheet resistance of the structural body and the sheet resistance of the polycrystalline silicon layer in the TOPCon battery by using the four-probe sheet resistance tester.
In the tunneling oxide layer characterization apparatus provided in the embodiment of the present application, the obtaining module 51 may include:
the acquisition unit is used for acquiring the square resistance of the auxiliary structure body to obtain the square resistance of the polycrystalline silicon layer in the auxiliary structure body; the auxiliary structure body can comprise a silicon substrate which is different from the silicon substrate in the structure body in type, a tunneling oxide layer which is the same as the tunneling oxide layer in structure body in structure, and a polycrystalline silicon layer which is the same as the polycrystalline silicon layer in the structure body in structure, wherein the silicon substrate in the auxiliary structure body and the polycrystalline silicon layer in the auxiliary structure body form a PN junction;
as a unit, the sheet resistance of the polycrystalline silicon layer in the second structure body is set as the sheet resistance of the polycrystalline silicon layer in the TOPCon battery.
The tunneling oxide layer characterization device provided in the embodiment of the present application may further include:
and the output module is used for outputting the square resistance and the characterization result of the tunneling oxide layer after analyzing the square resistance of the tunneling oxide layer to obtain the characterization result of the tunneling oxide layer.
An embodiment of the present application further provides a tunneling oxide layer characterization device, see fig. 6, which shows a schematic structural diagram of the tunneling oxide layer characterization device provided in the embodiment of the present application, and the schematic structural diagram may include:
a memory 61 for storing a computer program;
a processor 62 for implementing the computer program stored in the memory 61 and implementing the following steps:
obtaining the sheet resistance of a silicon substrate, the sheet resistance of a structural body and the sheet resistance of a polycrystalline silicon layer in the TOPCon battery; the structure comprises a silicon substrate, a tunneling oxide layer positioned on the surface of the silicon substrate and a polycrystalline silicon layer positioned on the surface of the tunneling oxide layer; obtaining the square resistance of the tunneling oxide layer according to the square resistance of the silicon substrate, the square resistance of the structure body and the square resistance of the polycrystalline silicon layer; and analyzing the sheet resistance of the tunneling oxide layer to obtain a characterization result of the tunneling oxide layer.
An embodiment of the present application further provides a readable storage medium, in which a computer program is stored, and when the computer program is executed by a processor, the following steps may be implemented:
obtaining the sheet resistance of a silicon substrate, the sheet resistance of a structural body and the sheet resistance of a polycrystalline silicon layer in the TOPCon battery; the structure comprises a silicon substrate, a tunneling oxide layer positioned on the surface of the silicon substrate and a polycrystalline silicon layer positioned on the surface of the tunneling oxide layer; obtaining the square resistance of the tunneling oxide layer according to the square resistance of the silicon substrate, the square resistance of the structure body and the square resistance of the polycrystalline silicon layer; and analyzing the sheet resistance of the tunneling oxide layer to obtain a characterization result of the tunneling oxide layer.
The readable storage medium may include: various media capable of storing program codes, such as a usb disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk.
For a description of a relevant part in a tunneling oxide layer characterization device, an apparatus, and a readable storage medium provided in the embodiments of the present application, reference may be made to the detailed description of the relevant part in a tunneling oxide layer characterization method provided in the embodiments of the present application, and details are not repeated here.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Furthermore, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include the inherent elements. Without further limitation, an element defined by the phrases "comprising a," "8230," "8230," or "comprising" does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element. In addition, parts of the above technical solutions provided in the embodiments of the present application, which are consistent with the implementation principles of corresponding technical solutions in the prior art, are not described in detail so as to avoid redundant description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A method for characterizing a tunneling oxide layer, comprising:
obtaining the sheet resistance of a silicon substrate, the sheet resistance of a structural body and the sheet resistance of a polycrystalline silicon layer in the TOPCon battery; the structure body comprises the silicon substrate, a tunneling oxide layer positioned on the surface of the silicon substrate and the polycrystalline silicon layer positioned on the surface of the tunneling oxide layer;
obtaining the square resistance of the tunneling oxide layer according to the square resistance of the silicon substrate, the square resistance of the structure body and the square resistance of the polycrystalline silicon layer;
analyzing the sheet resistance of the tunneling oxide layer to obtain a characterization result of the tunneling oxide layer;
obtaining the square resistance of the tunneling oxide layer according to the square resistance of the silicon substrate, the square resistance of the structure body and the square resistance of the polycrystalline silicon layer, and the method comprises the following steps:
by using
Calculating the sheet resistance of the tunneling oxide layer;
wherein R is 0 Is the sheet resistance of the structure, R 1 Is the sheet resistance, R, of the polysilicon layer 2 Is the sheet resistance of the tunneling oxide layer, f (R) 2 ) As a function of the sheet resistance of the tunnel oxide layer, R 3 Is the sheet resistance of the silicon substrate;
obtaining the sheet resistance of the polycrystalline silicon layer, comprising the following steps:
obtaining the square resistance of an auxiliary structure body to obtain the square resistance of a polycrystalline silicon layer in the auxiliary structure body; the auxiliary structure body comprises a silicon substrate which is different from the silicon substrate in the structure body in type, a tunneling oxide layer which is the same as the tunneling oxide layer in structure, and a polycrystalline silicon layer which is the same as the polycrystalline silicon layer in the structure body in structure, wherein the silicon substrate in the auxiliary structure body and the polycrystalline silicon layer in the auxiliary structure body form a PN junction;
and taking the sheet resistance of the polycrystalline silicon layer in the auxiliary structure body as the sheet resistance of the polycrystalline silicon layer in the TOPCon battery.
2. The method of claim 1 wherein the tunneling oxide layer characterization is performed using
Calculating the sheet resistance of the tunneling oxide layer, comprising:
will be provided with
Is converted into->
By using
And calculating the sheet resistance of the tunneling oxide layer.
3. The method according to claim 1, wherein analyzing a sheet resistance of the tunnel oxide layer to obtain a characterization result of the tunnel oxide layer comprises:
comparing the sheet resistance of the tunneling oxide layer with a standard sheet resistance, and obtaining a representation result of the tunneling oxide layer according to a comparison result; the quality of the tunneling oxide layer with the sheet resistance smaller than the standard sheet resistance is higher than that of the tunneling oxide layer with the sheet resistance not smaller than the standard sheet resistance.
4. The method of claim 1, wherein obtaining the sheet resistance of the silicon substrate, the sheet resistance of the structure, and the sheet resistance of the polysilicon layer in a TOPCon cell comprises:
and measuring and obtaining the square resistance of the silicon substrate, the square resistance of the structure body and the square resistance of the polycrystalline silicon layer in the TOPCon battery by using a four-probe square resistance tester.
5. The method of claim 1, wherein after analyzing the sheet resistance of the tunnel oxide layer to obtain the characterization result of the tunnel oxide layer, the method further comprises:
and outputting the sheet resistance and the characterization result of the tunneling oxide layer.
6. A tunneling oxide layer characterization apparatus, comprising:
the acquisition module is used for acquiring the sheet resistance of a silicon substrate, the sheet resistance of a structural body and the sheet resistance of a polycrystalline silicon layer in the TOPCon battery; the structure body comprises the silicon substrate, a tunneling oxide layer positioned on the surface of the silicon substrate and the polycrystalline silicon layer positioned on the surface of the tunneling oxide layer;
the obtaining module is used for obtaining the square resistance of the tunneling oxide layer according to the square resistance of the silicon substrate, the square resistance of the structure body and the square resistance of the polycrystalline silicon layer;
the analysis module is used for analyzing the sheet resistance of the tunneling oxide layer to obtain a representation result of the tunneling oxide layer;
the obtaining module comprises:
a computing unit for utilizing
Calculating the sheet resistance of the tunneling oxide layer;
wherein R is 0 Is the sheet resistance of the structure, R 1 Is the sheet resistance, R, of the polysilicon layer 2 Is the sheet resistance of the tunneling oxide layer, f (R) 2 ) As a function of the sheet resistance of the tunnel oxide layer, R 3 Is the sheet resistance of the silicon substrate;
the acquisition module includes:
the acquisition unit is used for acquiring the square resistance of the auxiliary structure body to obtain the square resistance of the polycrystalline silicon layer in the auxiliary structure body; the auxiliary structure body comprises a silicon substrate which is different from the silicon substrate in the structure body in type, a tunneling oxide layer which is the same as the tunneling oxide layer in structure, and a polycrystalline silicon layer which is the same as the polycrystalline silicon layer in the structure body in structure, wherein the silicon substrate in the auxiliary structure body and the polycrystalline silicon layer in the auxiliary structure body form a PN junction;
a unit configured to use a sheet resistance of a polycrystalline silicon layer in the auxiliary structure body as a sheet resistance of the polycrystalline silicon layer in the TOPCon battery.
7. A tunneling oxide layer characterization apparatus, comprising:
a memory for storing a computer program;
a processor for implementing the steps of the tunnel oxide characterization method according to any one of claims 1 to 5 when executing the computer program.
8. A readable storage medium, in which a computer program is stored, which computer program, when being executed by a processor, carries out the steps of the tunnel oxide characterization method according to any one of claims 1 to 5.
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