CN115612982A - Low-loss metallization coating method for quartz glass hemispherical harmonic oscillator and product - Google Patents
Low-loss metallization coating method for quartz glass hemispherical harmonic oscillator and product Download PDFInfo
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- CN115612982A CN115612982A CN202211181781.XA CN202211181781A CN115612982A CN 115612982 A CN115612982 A CN 115612982A CN 202211181781 A CN202211181781 A CN 202211181781A CN 115612982 A CN115612982 A CN 115612982A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 238000001465 metallisation Methods 0.000 title claims abstract description 19
- 238000000576 coating method Methods 0.000 title claims abstract description 18
- 239000010408 film Substances 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 239000002131 composite material Substances 0.000 claims abstract description 14
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 14
- 150000003624 transition metals Chemical class 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 17
- 230000007704 transition Effects 0.000 claims description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 2
- 238000013016 damping Methods 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 description 6
- 239000011104 metalized film Substances 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005265 energy consumption Methods 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C25/00—Manufacturing, calibrating, cleaning, or repairing instruments or devices referred to in the other groups of this subclass
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- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
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Abstract
The invention belongs to the technical field of inertial navigation hemispherical resonance gyroscopes, and discloses a low-loss metallization coating method for a quartz glass hemispherical resonator, which comprises the following steps: preparing a physical mask, and shielding the whole outer spherical surface and part of the surface on the inner spherical surface of the hemispherical harmonic oscillator; depositing a layer of transition metal film on the end face of the hemispherical harmonic oscillator, the surface of the lower supporting column and part of the inner spherical surface; depositing a conductive layer on the deposited transition metal thin film layer to form a composite metal conductive film layer; and applying a plurality of conductive strips between the composite metal conductive film layers respectively formed on the end surfaces of the hemispherical harmonic oscillators and the surface of the lower support column for connection. The invention also discloses a corresponding hemispherical harmonic oscillator product. According to the invention, on the premise of fully satisfying the electrification function of the quartz glass harmonic oscillator, the occupied area of the surface metallization film is effectively reduced, and meanwhile, the damping introduced by the metallization film is reduced, so that the quality factor of the harmonic oscillator is remarkably improved, and the performance of the harmonic oscillator is improved.
Description
Technical Field
The invention belongs to the technical field related to inertial navigation hemispherical resonator gyroscopes, and particularly relates to a low-loss metallization coating method and a low-loss metallization coating product for quartz glass hemispherical resonators.
Background
The hemispherical resonator gyroscope measures the rotation angle by utilizing the Brother effect and precessing through the standing wave of the two-wave amplitude vibration mode of the hemispherical vibrator, and has the characteristics of no mechanical motion part, no mechanical loss, simple structure, small volume, low power consumption, high reliability, long service life and the like. The gyro precision is only related to the processing precision of the harmonic oscillator and is not related to the size of the harmonic oscillator, the precision level can cover tactical level, inertial navigation level and strategic level, the gyro has extremely wide application prospect in various fields such as unmanned driving, weaponry, aerospace, space exploration and the like, and the gyro is recognized as the next generation of high-precision gyro technology by the inertial navigation field.
The hemispherical resonator is a main functional component of the hemispherical resonator gyroscope, is usually made of quartz glass with small internal damping but no conductivity, and is provided with conductivity by performing metallization coating on the surface of the hemispherical resonator. The capacitive electrode is formed by arranging an inner spherical surface or a plane electrode and an inner spherical surface or a hemisphere end surface of the hemispherical vibrator, and is used for exciting the hemispherical vibrator to vibrate through electrostatic force by applying an alternating current signal, measuring a displacement signal when the vibrator vibrates through capacitance between the polar plates, calculating the position of an operational mode antinode of the hemispherical vibrator, and further calculating the rotation angle of the hemispherical vibrator in an inertial space.
The quality factor is a physical quantity used for characterizing the energy loss of the vibration system, and refers to the ratio of the total energy of the vibration system to the loss energy in one period. The higher the quality factor is, the less the energy loss of the hemispherical resonator is in work, which is beneficial to reducing the output error of the hemispherical resonator gyro, reducing the energy consumption and improving the sensitivity. If the metal film layer on the surface of the hemispherical resonator is uneven, the circumferential damping of the hemispherical resonator is uneven, so that the hemispherical resonator gyroscope drifts, and the measurement precision is reduced.
However, since the damping of the metal film is relatively large, which is an inherent property of the metal film, it is difficult to greatly reduce the energy loss caused by the damping introduced by the metal film by optimizing the improvement of the coating process. On the other hand, in the prior art, the commonly adopted coating technical scheme needs to perform metallization coating on the whole inner spherical surface, the end surface and the surface of the supporting rod, and a large-area metal layer causes the quality factor of the hemispherical resonator to be sharply reduced, so that the performance of the hemispherical resonator is reduced.
Accordingly, there is a need in the art for further optimization of the metallization coating process so as to meet the higher quality requirement of the modern half-sphere quartz glass resonator.
Disclosure of Invention
Aiming at the defects or the requirements in the prior art, the invention aims to provide a low-loss metalized film coating method and a low-loss metalized film coating product for a quartz glass hemispherical resonator, wherein the operation flow of the whole preparation process is redesigned, and meanwhile, the process parameters and requirements of some key steps are improved in a targeted manner, so that the occupied area of a metalized film on the surface of the quartz glass hemispherical resonator can be effectively reduced on the premise of fully meeting the electrification function of the quartz glass resonator, and meanwhile, the damping caused by the metalized film is reduced, so that the quality factor of the resonator is remarkably improved, and the performance of the resonator is improved.
In order to achieve the above object, according to one aspect of the present invention, there is provided a low-loss metallization method for a hemispherical resonator of quartz glass, comprising the steps of:
preparing a physical mask, and shielding the whole outer spherical surface and the partial surface which does not need to be metallized on the inner spherical surface of the quartz glass hemispherical harmonic oscillator;
depositing a layer of transition metal film on the end surface of the shielded quartz glass hemispherical harmonic oscillator, the surface of the lower support column and the part of the inner spherical surface to be metalized by adopting a magnetron sputtering process;
thirdly, continuing to adopt a magnetron sputtering process, and depositing a conductive layer on the deposited transition metal thin film layer, thereby forming a composite metal conductive film layer together and realizing the electrification function of the quartz glass hemispherical harmonic oscillator;
fourthly, applying a plurality of conductive strips between the composite metal conductive film layer formed on the end surface of the quartz glass hemispherical harmonic oscillator and the composite metal conductive film layer formed on the surface of the lower support column for connection, wherein the conductive strips are distributed on the inner spherical surface of the quartz glass hemispherical harmonic oscillator;
and fifthly, connecting contact points between the composite metal conductive film layer formed on the end face of the quartz glass hemispherical harmonic oscillator and the plurality of conductive strips by adopting an inner spherical transition zone, thereby completing the whole low-loss metallization coating process.
As a further preference, the physical mask preferably keeps consistent with the curvature of the quartz glass hemispherical resonator, and is firm and reliable, and no residue is left on the surface of the quartz glass hemispherical resonator after removal is performed.
More preferably, the transition metal thin film layer preferably contains any one of chromium, tantalum, and titanium, or an alloy thereof.
More preferably, the thickness of the transition metal thin film layer is 5nm to 10nm.
More preferably, the conductive layer preferably contains any one of gold and platinum as a component.
More preferably, the thickness of the conductive layer is preferably 10nm to 100nm.
Further preferably, the number of the conductive stripes is preferably 3n or 4n, where n is a natural number equal to or greater than 2.
As a further preference, each of said conductors is electrically conductiveThe main parameter indexes of the strip are preferably designed as follows: the width of the semi-spherical quartz glass harmonic oscillator is 2-5% of the circumference of the end face of the semi-spherical quartz glass harmonic oscillator, and the length of the semi-spherical quartz glass harmonic oscillator accounts for the circumference angle
More preferably, the height of the inner spherical transition zone is preferably 0.2mm to 1mm.
According to another aspect of the invention, a corresponding quartz glass hemispherical harmonic oscillator product is also provided.
Generally, compared with the prior art, the technical scheme of the invention mainly has the following technical advantages:
(1) According to the invention, by redesigning the operation flow of the whole preparation process, on the premise of fully meeting the metalized functions of the quartz hemispherical harmonic oscillator, the area of the metal conducting layer covered on the surface of the quartz hemispherical harmonic oscillator can be further reduced, the damping of energy consumption during vibration of the quartz hemispherical harmonic oscillator is reduced, the quality factor of the quartz hemispherical harmonic oscillator after being metalized and coated is greatly improved, and the performance of the quartz hemispherical harmonic oscillator is further improved;
(2) According to the invention, the metalized film conductive strip is arranged between the plane electrode at the lip edge position of the quartz hemispherical oscillator and the metal layer of the supporting rod, so that the electrified conduction between the lip edge plane electrode and the supporting rod is realized, and the influence of a metallization process on the frequency cracking of the harmonic oscillator is reduced by reasonably setting the number of the conductive strips;
(3) The invention further carries out targeted design on the process parameters and requirements of a plurality of key steps, for example, the length and the width of the conductive band are reasonably set, and the metalized electrical performance index of the harmonic oscillator is better met on the premise of reducing the coverage area of the metalized film.
Drawings
FIG. 1 is an overall process flow diagram of a low-loss metallization coating method for a quartz glass hemispherical resonator according to the invention;
FIG. 2 is a schematic diagram of a hemispherical resonator conductive film plated product according to the present invention;
fig. 3 is a schematic cross-sectional view of a conductive film plating of a hemispherical resonator according to the present invention;
FIG. 4 is a schematic diagram of a conductive film employing 8 conductive strips in accordance with a preferred embodiment of the present invention;
fig. 5 is a schematic diagram of a conductive film employing 6 conductive strips in accordance with another preferred embodiment of the present invention.
The same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein:
1-hemisphere harmonic oscillator, 2-unmetallized inner spherical surface, 3-transition ring, 4-plane electrode, 5-connecting strip, 6-lower support column and 7-connecting circle.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is an overall process flow diagram of a low-loss metallization coating method of a quartz glass hemispherical resonator according to the invention. The present invention will be explained in more detail below with reference to fig. 1.
Firstly, preparing a physical mask, and shielding the whole outer spherical surface and the part of the surface, which does not need to be metalized, of the inner spherical surface of the quartz glass hemispherical harmonic oscillator.
In this step, the physical mask is preferably consistent with the curvature of the quartz glass hemispherical resonator, and is firm and reliable, and no residue is left on the surface of the quartz glass hemispherical resonator after removal is performed.
And depositing a layer of transition metal film on the end surface of the shielded quartz glass hemispherical harmonic oscillator, the surface of the lower support column and the part of the inner spherical surface needing metallization by adopting a magnetron sputtering process.
More specifically, a layer of transition metal film is deposited on the unmasked end face, part of the inner spherical surface and the surface of the lower support rod of the quartz glass harmonic oscillator by using a magnetron sputtering process, so that the adhesive force of the conductive layer is increased; the transition metal layer should have a pattern identical to that in fig. 2.
And then, continuously adopting a magnetron sputtering process, and depositing a conductive layer on the deposited transition metal film layer, thereby forming a composite metal conductive film layer together and realizing the electrification function of the quartz glass hemispherical harmonic oscillator.
According to a preferred embodiment of the present invention, the material of the transition layer metal may be any one of chromium, tantalum, titanium or an alloy thereof; further preferably chromium; the transition layer is prepared by a magnetron sputtering process; the thickness of the transition layer film is 5nm to 10nm, and more preferably 5nm.
According to another preferred embodiment of the present invention, the conductive layer should completely cover the transition layer and have a pattern size consistent with that of the transition layer; the material of the conductive layer metal can be any one of noble metal platinum or gold, and is further preferably gold; the thickness of the conductive layer is 10nm to 100nm, and more preferably 50nm.
Then, applying a plurality of conductive strips between the composite metal conductive film layer formed on the end surface of the quartz glass hemispherical harmonic oscillator and the composite metal conductive film layer formed on the surface of the lower support column for connection, wherein the conductive strips are distributed on the inner spherical surface of the quartz glass hemispherical harmonic oscillator;
and finally, connecting the contact points between the composite metal conductive film layer formed on the end face of the quartz glass hemispherical harmonic oscillator and the plurality of conductive strips by adopting an inner spherical transition zone, thereby completing the whole low-loss metallization coating process.
More specifically, as shown in fig. 2 and 3, the planar electrodes 4 of the harmonic oscillator are connected with the conductive strips 5 through the transition rings 3, the height of the transition rings 3 is 0.2mm to 1mm, and preferably, the height of the transition rings 3 is 0.2mm; the transition ring 3 is connected to the connecting circle 7 by means of conductive strips 5, the number of said conductive strips 5 being 4n (n ≧ 2) or 3n (n ≧ 2), preferably the number of conductive strips 58, see fig. 3; the width of the conductive strip 5 is 2% -5% of the circumference of the end face of the harmonic oscillator, and preferably, the circumferential angle occupied by the width of the conductive strip 5 is 5 degrees; the length of the conductive strip 5 is the occupied circumferential angle
Preferably, the length of the conductive strip 5 is the angle of occupied circle
The present invention will be explained in more detail below by way of a plurality of specific embodiments.
Example 1
The method for metallizing and coating a film on a hemispherical resonator provided in this embodiment 1 includes the following steps: manufacturing a physical mask on the surface of the harmonic oscillator, wherein the mask is used for shielding the surface of the hemispherical harmonic oscillator, which does not need to be coated; depositing a metal chromium layer with the thickness of 10nm on the end face, part of the inner spherical surface and the surface of the lower support rod of the hemispherical harmonic oscillator by using a magnetron sputtering process, wherein the metal chromium layer is required to have a pattern which is consistent with that in the graph of FIG. 4; the number of the conductive strips 5 is 8, and the circumferential angle occupied by the width of each conductive strip 5 is 5 degrees; the length of the conductive strip 5 is the occupied circumferential angle
Depositing a conductive layer with the same pattern size on the surface of the transition layer by using a magnetron sputtering process; the metal of the conducting layer is gold; the thickness of the conductive layer is 50nm.
Example 2
The method for metallizing and coating a film on a hemispherical resonator provided in this embodiment 2 includes the following steps: manufacturing a physical mask on the surface of the harmonic oscillator, wherein the mask is used for shielding the surface of the hemispherical harmonic oscillator, which does not need to be coated; depositing a metal chromium layer with the thickness of 5nm on the end face of the hemispherical harmonic oscillator, part of the inner spherical surface and the surface of the lower support rod by using a magnetron sputtering process, wherein the metal chromium layer is required to have a pattern consistent with that in the graph of FIG. 5; the number of the conductive strips 5 is 6, and the width of the conductive strips 5 occupies the circumferenceThe angle is 8 degrees; the length of the conductive strip 5 is the occupied circumferential angle
Depositing a conductive layer with the same pattern size on the surface of the transition layer by using a magnetron sputtering process; the metal of the conducting layer is gold; the thickness of the conductive layer is 50nm.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A low-loss metallization coating method for a quartz glass hemispherical harmonic oscillator is characterized by comprising the following steps:
preparing a physical mask, and shielding the whole outer spherical surface and the partial surface which does not need to be metallized on the inner spherical surface of the quartz glass hemispherical harmonic oscillator;
depositing a layer of transition metal film on the end surface of the shielded quartz glass hemispherical harmonic oscillator, the surface of the lower support column and the part of the inner spherical surface to be metalized by adopting a magnetron sputtering process;
thirdly, continuing to adopt a magnetron sputtering process, and depositing a conductive layer on the deposited transition metal thin film layer, thereby forming a composite metal conductive film layer together and realizing the electrification function of the quartz glass hemispherical harmonic oscillator;
fourthly, applying a plurality of conductive strips between the composite metal conductive film layer formed on the end surface of the quartz glass hemispherical harmonic oscillator and the composite metal conductive film layer formed on the surface of the lower support column for connection, wherein the conductive strips are distributed on the inner spherical surface of the quartz glass hemispherical harmonic oscillator;
and fifthly, connecting the contact points between the composite metal conductive film layer formed on the end face of the quartz glass hemispherical harmonic oscillator and the plurality of conductive strips by adopting an inner spherical transition zone, thereby completing the whole low-loss metallization coating process.
2. The method according to claim 1, wherein the composition of the transition metal thin film layer is preferably any one of chromium, tantalum, titanium, or an alloy thereof.
3. The method of claim 2, wherein the transition metal thin film layer has a thickness of preferably 5nm to 10nm.
4. A method according to any of claims 1-3, wherein the composition of the conductive layer is preferably any of gold or platinum.
5. The method according to claim 4, wherein the thickness of the conductive layer is preferably 10nm to 100nm.
6. The method according to any one of claims 1 to 5, wherein the number of conductive strips is preferably 3n or 4n, where n is a natural number equal to or greater than 2.
7. The method of claim 6, wherein the main parameter criteria of each of said conductive strips are preferably designed as follows: the width of the semi-spherical quartz glass harmonic oscillator is 2-5% of the circumference of the end face of the semi-spherical quartz glass harmonic oscillator, and the length of the semi-spherical quartz glass harmonic oscillator accounts for the circumference angle
8. The method according to any of claims 1 to 7, wherein the height of the internal spherical transition zone is preferably between 0.2mm and 1mm.
9. A hemispherical quartz glass resonator product, characterized in that it is produced by the method according to any of claims 1-8.
10. A hemispherical resonator gyro comprising the quartz glass hemispherical resonator according to claim 9.
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| CN116625344A (en) * | 2023-07-26 | 2023-08-22 | 中国船舶集团有限公司第七〇七研究所 | Resonant gyroscope based on low-loss hemispherical harmonic oscillator patterned electrode |
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| CN116625344B (en) * | 2023-07-26 | 2023-10-13 | 中国船舶集团有限公司第七〇七研究所 | Resonant gyroscope based on low-loss hemispherical harmonic oscillator patterned electrode |
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