CN115598485A - Power tube aging test device of direct current solid-state circuit breaker and test method thereof - Google Patents

Power tube aging test device of direct current solid-state circuit breaker and test method thereof Download PDF

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CN115598485A
CN115598485A CN202211219636.6A CN202211219636A CN115598485A CN 115598485 A CN115598485 A CN 115598485A CN 202211219636 A CN202211219636 A CN 202211219636A CN 115598485 A CN115598485 A CN 115598485A
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power tube
current
value
voltage
circuit
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CN115598485B (en
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余彬
周旺平
蔡骏
曹一涵
连静
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Nanjing University of Information Science and Technology
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Nanjing University of Information Science and Technology
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G01R31/2603—Apparatus or methods therefor for curve tracing of semiconductor characteristics, e.g. on oscilloscope
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/327—Testing of circuit interrupters, switches or circuit-breakers

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  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The invention discloses a power tube aging test device and a test method of a direct current solid-state circuit breaker, and provides the power tube aging test device and the test method aiming at the short circuit current-limiting working condition of the direct current solid-state circuit breaker. Compared with other aging test devices and test methods for power tubes, the aging test device and the aging test method for the power tubes have the characteristics of high aging test efficiency, capability of comprehensively representing the aging degree of the power tubes in situ on line, and particular suitability for the aging test of the power tubes under the short-circuit current-limiting working condition of the direct-current solid-state circuit breaker.

Description

Power tube aging test device of direct current solid-state circuit breaker and test method thereof
Technical Field
The invention relates to a power tube aging test device of a direct current solid-state circuit breaker and a test method thereof, belonging to the technical field of power electronics and electricians.
Background
Direct current Solid State Circuit Breakers (SSCBs) are electronic switching devices formed by Solid State semiconductor power devices, have the advantages of no electric arc, high switching speed (microsecond level), high reliability, capability of limiting short-Circuit current to a lower level and the like, and are the future development direction of the fault protection technology of the direct current microgrid.
When the direct current SSCB is used for processing short-circuit faults and works under a typical short-circuit current-limiting working condition, the power tube is subjected to the coupling impact action of extremely complex electric fields, temperature and mechanical stress, and the degradation and the failure of the power tube are caused. Under the working condition of short-circuit current limiting of the direct current SSCB, factors such as direct current bus voltage, turn-off clamping voltage, a current limiting value, current limiting time, line inductance and power tube shell temperature have large variation space. Under the application of the extreme condition, the evolution rule and mechanism of the characteristics of each layer of material of the power tube are what, the main weak link is at what position, and the factors are key factors influencing the reliability of the power tube, so that the theoretical basis is still lacked at present, and the popularization and application of the direct current SSCB technology are restricted.
At present, an aging test method for a power tube includes a second-level accelerated power cycle test method, a repeated short circuit test method and a repeated avalanche test method, and the working state of the power tube in the test process is greatly different from the working state under the direct current SSCB short circuit current limiting working condition. In the second-level accelerated power cycle test, the high power duration of the power tube is several seconds, the driving voltage keeps a higher value and is unchanged, the power tube works in a linear resistance area, and the power is lower; for repeated short circuit test and repeated avalanche test, the duration time of high power consumption of the power tube is about several microseconds, the driving voltage keeps a higher value unchanged, the power tube works in a linear amplification area, and the power is extremely high. However, under the working condition of short-circuit current limiting of the direct-current SSCB, the high power duration of the power tube is about tens of microseconds to several milliseconds, the driving voltage is reduced due to control, and the power tube operates in a linear amplification region with high power, which causes the power tube to generate different degradation and failure mechanisms. Therefore, the existing power tube aging test method and the corresponding test device are not suitable for the aging test of the direct current SSCB power tube.
In the current power tube aging process, the characteristic parameters monitored on line only adapt to a second-level accelerated power cycle working condition, a repeated short circuit working condition and a repeated avalanche working condition, and are difficult to adapt to a short circuit current limiting working condition of a direct current SSCB; in addition, the aging failure mechanism of the power tube under the traditional second-level power cycle is relatively clear, only a certain aging characteristic parameter needs to be monitored in an aging experiment, but the aging mechanism of the power tube under the short-circuit current-limiting working condition of the direct-current SSCB is not clear, the traditional method only monitors one aging characteristic parameter and is difficult to represent the real aging condition of the power tube, the termination time of the aging experiment cannot be accurately controlled, and various aging characteristic parameters capable of comprehensively reflecting the degradation of the power tube need to be monitored on line aiming at the actual working condition of the direct-current SSCB.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a power tube aging test device of a direct current solid-state circuit breaker and a test method thereof.
In order to achieve the above object, the present invention provides a power tube aging test device for a dc solid-state circuit breaker, comprising a dc power protection power supply, a dc SSCB, and a data monitoring and controllable load, wherein the dc power protection power supply is electrically connected to the dc SSCB, and the dc SSCB is electrically connected to the data monitoring and controllable load;
the direct current SSCB comprises a power tube to be measuredQ 1 Piezoresistor MOV, driving circuit I and driving resistorR g Copper radiator, water cooling bar, constant temperature water bath device and detection resistorR Sense Current detection circuit and line inductorL line The isolation circuit II, the isolation circuit III and the FPGA control panel;
power tube to be measuredQ 1 The drain electrode of the power transistor is connected with the point B, and the power transistor is measuredQ 1 The grid electrode of the power transistor is connected with the G point and the power transistor to be measuredQ 1 The source of (2) is connected with the point D; one end of the voltage dependent resistor MOV is connected with the point B, and the other end of the voltage dependent resistor MOV is connected with the point D;
first driving circuit through driving resistorR g The circuit ground of the first driving circuit and the circuit ground of the current detection circuit are both connected with a first control ground; the water outlet of the thermostatic water bath device is communicated with the water inlet of the copper radiator, and the water outlet of the copper radiator is communicated with the thermostatic water bath through a water cooling barA water inlet of the device;
the FPGA control panel is connected with the first driving circuit through the third isolating circuit, the FPGA control panel is communicated with the current detection circuit through the second isolating circuit, and one end of the current detection circuit and the detection resistorR Sense One end of the current detection circuit is connected with the point D, and the other end of the current detection circuit and the detection resistorR Sense The other ends of the two are connected with the point E;
e point and line inductorL line Is connected to a line inductorL line The other end is connected with the point F.
Preferably, the direct current power protection power supply comprises a direct current voltage source and a second IGBT high-power deviceS 3 The driving circuit III and the isolation circuit IV are connected;
the anode of the direct current voltage source and the second IGBT high-power deviceS 3 The collector electrodes of the direct current voltage source are connected with the point A, the cathode of the direct current voltage source is connected with the point H, and the point H is electrically connected with the power ground; second IGBT high-power deviceS 3 The emitter of the second IGBT is connected with a point B, the point B is connected with a second control ground, and the second IGBT high-power deviceS 3 The grid and the driving circuit are connected with a point C; the third driving circuit takes the second control ground as a circuit reference ground, and the third driving circuit is connected with the FPGA control panel through the fourth isolating circuit.
Preferably, the controllable load comprises a first IGBT high-power deviceS 2 A second drive circuit and a load resistorR L And an isolation circuit one;
first IGBT high-power deviceS 2 Collector and load resistor ofR L One end of the first IGBT high-power device is connected with the point FS 2 Emitter and load resistor ofR L The other end of the first switch is connected with a point H, and the point H is connected with a power ground;
first IGBT high-power deviceS 2 The grid and the second driving circuit are connected with the point I, and the second driving circuit is connected with the point H; and the second driving circuit is connected with the FPGA control panel through the first isolating circuit.
Preferably, the data monitoring comprises an on-line measuring circuit of the conducting voltage, an on-line measuring circuit of the driving voltage, a current detecting circuit and a data acquisition module,
the input end, the point B and the point D of the on-line voltage measuring circuit are connected, and the output end of the on-line voltage measuring circuit is connected with the data acquisition module; the input end, the point G and the point D of the driving voltage online measurement circuit are connected, and the output end of the driving voltage online measurement circuit is connected with the data acquisition module; the input end, the point E and the point D of the current detection circuit are connected, and the output end of the current detection circuit is connected with the data acquisition module.
The testing method of the power tube aging testing device of the direct current solid-state circuit breaker adopts the power tube aging testing device of the direct current solid-state circuit breaker as an execution main body to realize the following steps:
obtaining actual DC voltage source voltage under different combinations of DC SSCB short circuit current-limiting conditionsV DC The shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limiting of the power tube with the known model is turned off and the actual line inductance value;
actual DC voltage source voltage under DC SSCB short-circuit current-limiting working condition based on different combinationsV DC Obtaining a relation curve of a corresponding current limiting current value and a maximum current limiting time by the shell temperature of the power tube with the known model, the voltage value between the drain source and the actual line inductance value when the current limiting of the power tube with the known model is turned off;
obtaining the power tube to be measuredQ 1 On-resistance threshold of (2), a falling threshold of the driving voltage, and a rising threshold of the average value of the driving voltage;
setting the current limiting current value, the current limiting time, the shell temperature and the tested power tube of the power tube aging test device of the direct current solid-state circuit breaker under different combinations under the direct current SSCB short circuit current limiting working condition according to the relation curve of the current limiting current value and the maximum current limiting timeQ 1 Voltage value between drain and source electrodes and line inductance value when current limiting is turned off, power tube of known type and power tube to be testedQ 1 The models are the same;
the data acquisition module acquires data of a power tube aging test device of the direct-current solid-state circuit breaker;
obtainingPower tube to be measuredQ 1 An on-resistance threshold value, a falling threshold value of the driving voltage, and a rising threshold value of the average value of the driving voltage when the driving voltage fails due to aging;
and judging whether the power tube aging test device of the direct current solid-state circuit breaker stops working or not according to the data of the power tube aging test device of the direct current solid-state circuit breaker acquired by the data acquisition module, the threshold value of the on-resistance, the drop threshold value of the driving voltage and the rise threshold value of the average value of the driving voltage.
Preferentially, the actual DC voltage source voltage under the short-circuit current-limiting working condition of the DC SSCB based on different combinationsV DC Obtaining a relation curve of a corresponding current limiting current value and a maximum current limiting time by the shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limiting of the power tube with the known model is turned off and the actual line inductance value, and realizing the following steps:
step 1, keeping a direct-current voltage source in a power tube aging test device of a direct-current solid-state circuit breaker and a power supply for maintaining the work of the power tube aging test device of the direct-current solid-state circuit breaker in a turn-off state, measuring grid-source resistance and drain-source resistance of power tubes of known models by using a universal meter, and obtaining initial grid-source resistance of the power tube of the a-th known model and initial drain-source resistance of the power tube of the a-th known model;
step 2, setting a shell temperature for a power tube of a known model by using a constant-temperature water bath device in the power tube aging test device of the direct-current solid-state circuit breaker;
the FPGA control panel is utilized to maintain a second IGBT high-power device in the power tube aging test device of the direct-current solid-state circuit breakerS 3 And power tube of known typeQ 1 In the on state, the first IGBT high-power deviceS 2 In the off state, setting the voltage of the DC voltage sourceV DC And a load resistorR L The conduction current reaches a set conduction current value, and the current detection circuit measures the conduction current to obtain the conduction current;
measuring drain-source electrode voltage of power tube to be measured by on-line measuring circuit of breakover voltageV ds Current ofDetecting the conduction current measured by the circuit and the set shell temperature to obtain the initial conduction resistance value of the a-th power tube with the known model, wherein a is a positive integer;
step 3, taking the obtained numerical value which is 0.001 times of the initial gate-source resistance value of the power tube with the a-th known model as the set gate-source resistance threshold value of the power tube with the a-th known model, taking the obtained numerical value which is 0.001 times of the initial drain-source resistance value of the power tube with the a-th known model as the set drain-source resistance threshold value of the power tube with the a-th known model, and taking the obtained numerical value which is 1.2 times of the initial on-resistance value of the power tube with the a-th known model as the set on-resistance threshold value of the power tube with the a-th known model;
step 4, according to the actual DC voltage source voltage under the short-circuit current-limiting working condition of a certain combined DC SSCBV DC Setting the a current limiting current value and the current limiting time by using an FPGA control board, and carrying out single short circuit current limiting test;
acquiring the actual grid source resistance of the power tube of the a-th known model, the actual drain source resistance of the power tube of the a-th known model and the actual on-resistance of the power tube of the a-th known model;
step 5, if the actual grid-source resistance of the a-th known model power tube is smaller than the grid-source resistance threshold of the a-th known model power tube, the actual drain-source resistance of the a-th known model power tube is smaller than the drain-source resistance threshold of the a-th known model power tube or the actual on-resistance of the a-th known model power tube is larger than the drain-source resistance threshold of the a-th known model power tube, stopping the test, stopping the power supply of the direct-current voltage source, recording the maximum current limiting time of the a-th known model power tube under the set current limiting value, entering step 6, otherwise, keeping the combination and the current limiting value unchanged, increasing the current limiting time, and executing step 4;
step 6, replacing the a-th known model power tube in the step 1-5 by the a + 1-th known model power tube, changing the current limiting current value to be the a + 1-th current limiting current value, and executing the step 1-5 again to obtain the maximum current limiting time of the a + 1-th current limiting current value of the tested power tube under the combination;
step 7, repeating the step 6 until a +1 reaches a set value B, obtaining the maximum current limiting time under B current limiting values, and finally obtaining the actual direct current voltage source voltage under the combined direct current SSCB short-circuit current limiting working condition based on the combined direct current SSCBV DC Obtaining a first relation curve of the current limiting current value and the maximum current limiting time of the combination by the shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limiting of the power tube with the known model is turned off and the actual line inductance value;
step 8, repeating the steps 1-7 for N times (N is more than or equal to 6), obtaining N relation curves of the current limiting current value and the maximum current limiting time under a certain combination in total, and carrying out least square method processing on the obtained N relation curves of the current limiting current value and the maximum current limiting time under the certain combination to finally obtain the relation curve of the current limiting current value and the maximum current limiting time of the combination;
step 9, judging whether to obtain the relation curve between the current limiting current value and the maximum current limiting time under all the combinations, and if not, replacing the actual voltage of the direct current voltage sources of other combinationsV DC And (3) executing the step 1 according to the shell temperature of the power tube with the known model, the voltage value between the drain source and the actual line inductance value when the current limiting of the power tube with the known model is turned off, and if so, ending the operation.
Preferably, the voltage of the DC voltage source is set according to the relation curve of the current limiting current value and the maximum current limiting time under all the combinations obtained in step 9V DC The shell temperature of the power tube to be tested, the voltage value between drain and source electrodes when the current limiting of the power tube to be tested is turned off, the actual line inductance value, the current limiting current value and the current limiting time, and then the power tube is subjected to aging test;
preferentially, obtaining the power tube to be measuredQ 1 The on-resistance threshold value is realized by the following steps when the aging fails:
obtaining a power tube to be measuredQ 1 On-resistance threshold in nominal on-phaseR dson-TH Power tube to be measuredQ 1 The shell temperature and the conduction current in the rated conduction stage are set according to the step 3;
obtaining a power tube to be measured by utilizing a conduction voltage on-line measuring circuitQ 1 Initial on-resistance value ofR dson-INI ；
Taking 1.2 times of initial on-resistance value as the power tube to be measuredQ 1 On-resistance threshold ofR dson-TH ；
Obtaining a power tube to be measuredQ 1 Drop threshold of driving voltage when failure occurs due to agingV gs—HTH The method is realized by the following steps:
obtaining a power tube to be measured by using a driving voltage on-line measuring circuitQ 1 Initial driving voltage value ofV gs Obtaining the power tube to be measuredQ 1 Initial driving resistance value ofR g ；
Then, the current flows into the driving resistorR g Drive current ofI g The fact that the power tube is actually measured is considered as the power tube with the power tube being more than 1mAQ 1 Another criterion for failure, taking into account the drive currentI g Small value, inconvenient measurement and acquisition of measured power tubeQ 1 Of the driving voltage ofV gs—HTH ：
V gs—HTH =V gs -I gmax *R g ；
WhereinI gmax =1mA；
Obtaining a power tube to be measuredQ 1 Threshold value for increasing average value of drive voltage at the time of failure due to agingV gs—LTH The method is realized by the following steps:
obtaining actual measured power tubeQ 1 Initial value of average value of driving voltage in current limiting stageV gLimit-INI ；
Will be provided withV gLimit-INI Is 1.2 times as the power tube to be measuredQ 1 Current limitingDrive voltage rise threshold of phaseV gs-LTH 。
Preferably, the current limiting time is less than the maximum current limiting time, and the time of the rated on-phase and off-phase reaches the second level.
Preferentially, whether the power tube aging testing device of the direct current solid-state circuit breaker stops working or not is judged according to the data of the power tube aging testing device of the direct current solid-state circuit breaker, the threshold value of the on-resistance, the drop threshold value of the driving voltage and the rise threshold value of the average value of the driving voltage, which are acquired by the data acquisition module, and the method is realized through the following steps:
collecting data of a power tube aging test device of a direct current solid-state circuit breaker, wherein the data comprises an on resistance in a rated conduction stage, a driving voltage excess in the rated conduction stage and a driving voltage average value in a current limiting stage;
if the on-resistance of the rated on-state collected by the data collection module exceeds the on-resistance threshold value, the driving voltage of the rated on-state collected by the data collection module exceeds the drop threshold value of the driving voltage, or the average value of the driving voltage of the current-limiting stage collected by the data collection module exceeds the rise threshold value of the average value of the driving voltage, the power tube aging test device of the direct current solid-state circuit breaker stops working.
The invention achieves the following beneficial effects:
(1) The invention aims at the actual working condition of the direct current SSCB, carries out the aging test of the tested power tube under the actual working condition in a circulating and repeated way, and overcomes the defect that the traditional aging test device and test method of the power tube are difficult to be suitable for the actual working condition of the direct current SSCB.
(2) The invention fully considers the short-circuit current-limiting working condition of the direct current SSCB, comprehensively reflects the aging condition of the power tube, utilizes the on-resistance monitoring quantity to represent the aging degree of the packaging (such as a bonding wire and a solder layer) of the power tube on line, and utilizes the driving voltage (the average value of the driving voltage in the rated on-phase and the driving voltage in the current-limiting phase) to represent the aging degree of the chip (such as a grid oxide layer) of the power tube to be measured on line. In the aging test, as long as any one of the monitoring quantities exceeds a set threshold, the aging test is stopped, the problems that the online in-situ monitoring of the aging characteristic parameters of the power tube under the short-circuit current-limiting working condition of the direct current SSCB is difficult and the aging condition of the power tube cannot be comprehensively reflected are solved, and the aging test efficiency of the power tube is improved.
(3) The testing device and the testing method are suitable for the aging test of various types of power tubes of the direct-current solid-state circuit breaker, such as conventional Si-MOSFET, si-IGBT and novel semiconductor power tubes, such as SiC-MOSFET, siC-IGBT and GaN-HEMT.
(4) In the power tube aging test process, the aging characteristic parameters of the power tube are monitored in situ on line, so that automatic cycle test is realized, and the aging test efficiency is improved;
the invention realizes the aging test of the power tube under the short-circuit current-limiting working condition of the direct current SSCB, and can extract the aging characteristic of the power tube on line in situ so as to reveal the aging mechanism of the power tube under the actual working condition;
the research on the power tube aging test device and the test method under the short-circuit current-limiting working condition of the direct-current SSCB is developed, the power tube aging mechanism is disclosed, the reliability of the direct-current SSCB is improved from the initial design angle, and the development of a direct-current micro-grid is promoted and promoted.
Drawings
FIG. 1 is a circuit diagram of the present apparatus;
FIG. 2 is a waveform diagram showing the operation timing of the present apparatus.
Detailed Description
The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
Example one
As shown in fig. 1, the present invention provides a power tube aging test apparatus for a dc solid-state circuit breaker, including a dc power protection power supply, a dc SSCB, and a data monitoring and controllable load, wherein the dc power protection power supply is electrically connected to the dc SSCB, and the dc SSCB is electrically connected to the data monitoring and controllable load;
the direct current SSCB comprises a power tube to be measuredQ 1 Piezoresistor MOV, driving circuit I and driving resistorR g Copper radiator, water cooling drainage, constant temperature water bath device and detection resistorR Sense Current detection circuit and line inductorL line The isolation circuit II, the isolation circuit III and the FPGA control panel;
power tube to be measuredQ 1 The drain electrode of the power transistor is connected with a point B, and the power transistor to be measuredQ 1 The grid electrode of the power transistor is connected with the G point and the power transistor to be measuredQ 1 The source of (2) is connected with the point D; one end of the voltage dependent resistor MOV is connected with the point B, and the other end of the voltage dependent resistor MOV is connected with the point D;
first drive circuit through drive resistorR g The circuit ground of the first driving circuit and the circuit ground of the current detection circuit are both connected with a first control ground; the water outlet of the constant-temperature water bath device is communicated with the water inlet of the copper radiator, and the water outlet of the copper radiator is communicated with the water inlet of the constant-temperature water bath device through a water cooling bar;
the FPGA control panel is connected with the first driving circuit through the third isolating circuit, the FPGA control panel is communicated with the current detection circuit through the second isolating circuit, and one end of the current detection circuit and the detection resistorR Sense One end of the current detection circuit is connected with the point D, and the other end of the current detection circuit and the detection resistorR Sense The other ends of the two are connected with the point E;
e point and line inductorL line Is connected to a line inductorL line The other end is connected with the point F.
Further, the dc power protection power supply in this embodiment includes a dc voltage source and a second IGBT high power deviceS 3 The driving circuit III and the isolation circuit IV;
the anode of the direct current voltage source and the second IGBT high-power deviceS 3 The collector electrodes of the direct current voltage source are connected with the point A, the cathode of the direct current voltage source is connected with the point H, and the point H is electrically connected with the power ground; second IGBT high-power deviceS 3 The emitter of the second IGBT is connected with the point B, the point B is connected with the second control ground, and the second IGBT high-power deviceS 3 The grid and the driving circuit are connected with a point C; the third driving circuit takes the second control ground as a circuit reference ground, and the third driving circuit is connected with the FPGA control panel through the fourth isolating circuit.
Further, the instant foodIn the embodiment, the controllable load comprises a first IGBT high-power deviceS 2 A second drive circuit and a load resistorR L And an isolation circuit one;
first IGBT high-power deviceS 2 Collector and load resistor ofR L One end of the first IGBT high-power device is connected with the F pointS 2 Emitter and load resistor ofR L The other end of the first switch is connected with a point H, and the point H is connected with a power ground;
first IGBT high-power deviceS 2 The grid and the second driving circuit are connected with the point I, and the second driving circuit is connected with the point H; and the second driving circuit is connected with the FPGA control panel through the first isolating circuit.
Furthermore, the data monitoring in this embodiment includes an on-line measuring circuit of the conducting voltage, an on-line measuring circuit of the driving voltage, a current detecting circuit and a data collecting module,
the input end, the point B and the point D of the on-line voltage measuring circuit are connected, and the output end of the on-line voltage measuring circuit is connected with the data acquisition module; the input end, the point G and the point D of the driving voltage online measuring circuit are connected, and the output end of the driving voltage online measuring circuit is connected with the data acquisition module; the input end, the point E and the point D of the current detection circuit are connected, and the output end of the current detection circuit is connected with the data acquisition module.
The testing method of the power tube aging testing device of the direct current solid-state circuit breaker adopts the power tube aging testing device of the direct current solid-state circuit breaker as an execution main body to realize the following steps:
obtaining actual DC voltage source voltage under different combinations of DC SSCB short circuit current-limiting conditionsV DC The shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limiting of the power tube with the known model is turned off and the actual line inductance value;
actual direct-current voltage source voltage under direct-current SSCB short-circuit current-limiting working condition based on different combinationsV DC Obtaining the shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limiting of the power tube with the known model is turned off and the actual line inductance valueThe relation curve of the current limiting current value and the maximum current limiting time;
obtaining a power tube to be measuredQ 1 On-resistance threshold of (1), drop threshold of driving voltage, and rise threshold of driving voltage average value;
setting the current limiting current value, the current limiting time, the shell temperature and the tested power tube of the power tube aging test device of the direct current solid-state circuit breaker under different combinations under the direct current SSCB short circuit current limiting working condition according to the relation curve of the current limiting current value and the maximum current limiting timeQ 1 Voltage value between drain and source electrodes and line inductance value when current limiting is turned off, power tube of known type and power tube to be testedQ 1 The models are the same;
the data acquisition module acquires data of a power tube aging test device of the direct-current solid-state circuit breaker;
obtaining a power tube to be measuredQ 1 An on-resistance threshold value, a falling threshold value of the driving voltage, and a rising threshold value of the average value of the driving voltage when the driving voltage fails due to aging;
and judging whether to stop the work of the power tube aging test device of the direct current solid-state circuit breaker or not according to the data of the power tube aging test device of the direct current solid-state circuit breaker acquired by the data acquisition module, the threshold value of the on-resistance, the drop threshold value of the driving voltage and the rise threshold value of the average value of the driving voltage.
Further, in this embodiment, the actual dc voltage source voltage under the short-circuit current-limiting condition of the dc SSCB based on different combinationsV DC Obtaining a relation curve of a corresponding current limiting current value and a maximum current limiting time by the shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limiting of the power tube with the known model is turned off and the actual line inductance value, and realizing the following steps:
step 1, keeping a direct-current voltage source in a power tube aging test device of a direct-current solid-state circuit breaker and a power supply for maintaining the work of the power tube aging test device of the direct-current solid-state circuit breaker in a turn-off state, measuring grid-source resistance and drain-source resistance of power tubes of known models by using a universal meter, and obtaining initial grid-source resistance of the power tube of the a-th known model and initial drain-source resistance of the power tube of the a-th known model;
step 2, setting a shell temperature for the power tube of a known model by using a constant-temperature water bath device in the power tube aging test device of the direct-current solid-state circuit breaker;
the FPGA control panel is utilized to maintain a second IGBT high-power device in the power tube aging test device of the direct-current solid-state circuit breakerS 3 And power tube of known typeQ 1 In the on state, the first IGBT high-power deviceS 2 In the off state, setting the voltage of the DC voltage sourceV DC And a load resistorR L The conduction current reaches a set conduction current value, and the current detection circuit measures the conduction current to obtain the conduction current;
measuring drain-source electrode voltage of power tube to be measured by on-line measuring circuit of breakover voltageV ds Acquiring an initial on-resistance value of the a-th power tube with a known model by using the on-current measured by the current detection circuit and the set shell temperature, wherein a is a positive integer;
step 3, taking the obtained value which is 0.001 times of the initial grid source resistance value of the a-th known model power tube as a set gate source resistance threshold value of the a-th known model power tube, taking the obtained value which is 0.001 times of the initial drain source resistance value of the a-th known model power tube as a set drain source resistance threshold value of the a-th known model power tube, and taking the obtained value which is 1.2 times of the initial on-resistance value of the a-th known model power tube as a set on-resistance threshold value of the a-th known model power tube;
step 4, according to the actual DC voltage source voltage under the short-circuit current-limiting working condition of a certain combined DC SSCBV DC Setting the a current limiting current value and the current limiting time by using an FPGA control board, and carrying out single short circuit current limiting test;
acquiring the actual grid source resistance of the power tube of the a-th known model, the actual drain source resistance of the power tube of the a-th known model and the actual on-resistance of the power tube of the a-th known model;
step 5, if the actual grid-source resistance of the a-th known model power tube is smaller than the grid-source resistance threshold of the a-th known model power tube, the actual drain-source resistance of the a-th known model power tube is smaller than the drain-source resistance threshold of the a-th known model power tube or the actual on-resistance of the a-th known model power tube is larger than the drain-source resistance threshold of the a-th known model power tube, stopping the test, stopping the power supply of the direct-current voltage source, recording the maximum current limiting time of the a-th known model power tube under the set current limiting value, entering step 6, otherwise, keeping the combination and the current limiting value unchanged, increasing the current limiting time, and executing step 4;
step 6, replacing the a-th known model power tube in the step 1-5 by the a + 1-th known model power tube, changing the current limiting current value to be the a + 1-th current limiting current value, and executing the step 1-5 again to obtain the maximum current limiting time of the a + 1-th current limiting current value of the tested power tube under the combination;
step 7, repeating the step 6 until a +1 reaches a set value B, obtaining the maximum current limiting time under B current limiting values, and finally obtaining the actual direct current voltage source voltage under the combined direct current SSCB short-circuit current limiting working condition based on the combined direct current SSCBV DC Obtaining a first relation curve of the current limiting current value and the maximum current limiting time of the combination by the shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limiting of the power tube with the known model is turned off and the actual line inductance value;
step 8, repeating the steps 1-7 for N times (N is more than or equal to 6), obtaining N relation curves of the current limiting current value and the maximum current limiting time under a certain combination in total, and carrying out least square method processing on the obtained N relation curves of the current limiting current value and the maximum current limiting time under the certain combination to finally obtain the relation curve of the current limiting current value and the maximum current limiting time of the combination;
step 9, judging whether to obtain the relation curve between the current limiting current value and the maximum current limiting time under all the combinations, and if not, replacing the actual voltage of the direct current voltage sources of other combinationsV DC Shell temperature of power tube of known type, current limiting switch of power tube of known typeAnd (5) executing the step 1 by the voltage value between the drain and the source and the actual line inductance value in the time-out process, and finishing the operation if the voltage value is the actual line inductance value.
Further, in this embodiment, the voltage of the dc voltage source is set according to the relation curve between the current limiting value and the maximum current limiting time in all combinations obtained in step 9V DC The shell temperature of the power tube to be tested, the voltage value between drain and source electrodes when the current limiting of the power tube to be tested is turned off, the actual line inductance value, the current limiting current value and the current limiting time, and then the power tube is subjected to aging test;
further, in the embodiment, the measured power tube is obtainedQ 1 The on-resistance threshold value is realized by the following steps when the aging fails:
obtaining the power tube to be measuredQ 1 On-resistance threshold in nominal on-phaseR dson-TH Power tube to be measuredQ 1 The shell temperature and the conduction current in the rated conduction stage are set according to the step 3;
obtaining measured power tube by utilizing on-line measuring circuit of breakover voltageQ 1 Initial on-resistance value ofR dson-INI ；
Taking 1.2 times of initial on-resistance as the power tube to be measuredQ 1 On-resistance threshold ofR dson-TH ；
Obtaining the power tube to be measuredQ 1 Drop threshold of driving voltage when failure occurs due to agingV gs—HTH The method is realized by the following steps:
obtaining a power tube to be measured by using a driving voltage on-line measuring circuitQ 1 Initial driving voltage value ofV gs Obtaining the power tube to be measuredQ 1 Initial driving resistance value ofR g ；
Then, the current flows into the driving resistorR g Drive current ofI g The fact that the power tube is actually measured is considered as the power tube with the power tube being more than 1mAQ 1 Another criterion for failure, taking into account the drive currentI g Small value, inconvenient measurement and acquisition of measured power tubeQ 1 Of (2)Drop threshold of dynamic voltageV gs—HTH ：
V gs—HTH =V gs -I gmax *R g ；
WhereinI gmax =1mA；
Obtaining a power tube to be measuredQ 1 Rising threshold of average value of driving voltage at time of failure due to agingV gs—LTH The method is realized by the following steps:
obtaining actual measured power tubeQ 1 Initial value of average value of driving voltage in current limiting stageV gLimit-INI ；
Will be provided withV gLimit-INI 1.2 times of the measured power tubeQ 1 Drive voltage rise threshold for current limit phaseV gs-LTH 。
Further, in this embodiment, the current limiting time is less than the maximum current limiting time, and the time of the rated on-phase and off-phase reaches the second level.
Further, in this embodiment, data of the power tube aging test device of the dc solid-state circuit breaker, an on-resistance threshold, a drop threshold of the driving voltage, and a rise threshold of the average value of the driving voltage are collected by the data collection module, and it is determined whether to stop the power tube aging test device of the dc solid-state circuit breaker, which is implemented by the following steps:
collecting data of a power tube aging test device of a direct current solid-state circuit breaker, wherein the data comprises an on resistance in a rated conduction stage, a driving voltage excess in the rated conduction stage and a driving voltage average value in a current limiting stage;
if the on-resistance of the rated on-state collected by the data collection module exceeds the on-resistance threshold value, the driving voltage of the rated on-state collected by the data collection module exceeds the drop threshold value of the driving voltage, or the average value of the driving voltage of the current-limiting stage collected by the data collection module exceeds the rise threshold value of the average value of the driving voltage, the power tube aging test device of the direct current solid-state circuit breaker stops working.
Example two
A power tube aging test device of a direct current solid-state circuit breaker comprises a direct current power protection power supply, a direct current SSCB, a data monitoring and controllable load;
the direct current power protection power supply is electrically connected with the direct current SSCB, and the direct current SSCB is electrically connected with the data monitoring and controllable load.
The direct current power protection power supply comprises a direct current voltage source and a second IGBT high-power deviceS 3 The driving circuit III and the isolation circuit IV are connected;
the anode of the direct current voltage source and the second IGBT high-power deviceS 3 The collectors of the DC voltage source are all connected to the point A, and the cathode of the DC voltage source is connected with the power ground point H; second IGBT high-power deviceS 3 The emitter of the second IGBT is connected with the point B, the point B is connected with the second control ground, and the second IGBT high-power deviceS 3 The grid of the grid is connected with the third driving circuit at a point C; the third driving circuit takes the second control ground as a circuit reference ground, and is connected with the FPGA control panel through the fourth isolating circuit.
The direct current SSCB comprises a power tube to be measuredQ 1 The device comprises a voltage dependent resistor MOV, a driving circuit I, a copper radiator, a water cooling bar, a constant temperature water bath device and a detection resistorR Sense Current detection circuit and line inductorL line The isolation circuit II, the isolation circuit III and the FPGA control panel;
power tube to be measuredQ 1 The drain electrode of the power transistor is connected with the point B, and the power transistor is measuredQ 1 The grid electrode of the power transistor is connected with the G point and the power transistor to be measuredQ 1 The source of (2) is connected with the point D; one end of the voltage dependent resistor MOV is connected with the point B, and the other end of the voltage dependent resistor MOV is connected with the point D;
the first driving circuit is connected with the G point, the circuit ground of the first driving circuit and the circuit ground of the current detection circuit are both connected with the D point, and the D point is connected with the first control point; the water outlet of the constant-temperature water bath device is communicated with the water inlet of the copper radiator, and the water outlet of the copper radiator is communicated with the water inlet of the constant-temperature water bath device through a water cooling row;
the FPGA control panel is connected with a first driving circuit through a third isolating circuit, and the FPGA control panelThe current detection circuit, one end of the current detection circuit and the detection resistor are connected through the isolation circuitR Sense One end of the current detection circuit is connected with the point D, and the other end of the current detection circuit and the detection resistorR Sense The other ends of the two are connected with a point E;
e point and line inductorL line Is connected to a line inductorL line The other end is connected with the point F.
The controllable load comprises a first IGBT high-power deviceS 2 A second drive circuit and a load resistorR L And an isolation circuit one;
first IGBT high-power deviceS 2 Collector and load resistorR L One end of the first IGBT high-power device is connected with the point FS 2 Emitter and load resistor ofR L The other end of the first switch is connected with a point H, and the point H is connected with a power ground;
first IGBT high-power deviceS 2 The grid and the second driving circuit are connected with the point I, and the second driving circuit is connected with the point H; and the second driving circuit is connected with the FPGA control panel through the first isolating circuit.
The drive circuit three receives signals from the FPGA control panel through the isolation circuit four, the FPGA control panel sends control signals to the drive circuit through the isolation circuit three, and then the drive circuit one controlsI d AndI SSCB the value and duration of (d); the drive circuit II receives signals from the FPGA control panel through the isolation circuit I, and the on-line measurement circuit for the conduction voltage measures and acquires signals on lineQ 1 The on-line measuring circuit for the on-line voltage and the driving voltage measures and collects the on-line voltage and the driving voltageQ 1 The drive voltage and current detection circuit measures and collects on lineQ 1 Drain current of (1);
the data monitoring comprises an on-line measuring circuit of the breakover voltage, an on-line measuring circuit of the driving voltage, a current detecting circuit and a data acquisition module,
the input end of the on-line conduction voltage measuring circuit is connected with the point B and the point D, and the output end of the on-line conduction voltage measuring circuit is connected with the data acquisition module; the input end of the driving voltage online measurement circuit is connected with the point G and the point D, and the output end of the driving voltage online measurement circuit is connected with the data acquisition module; the input end of the current detection circuit is connected with the point E and the point D, and the output end of the current detection circuit is connected with the data acquisition module.
The direct-current power protection power supply part provides high-power direct-current voltage for the aging assembly of the power tube to be tested and passes through a second IGBT high-power deviceS 3 And necessary fault protection is provided for the aging assembly of the power tube to be tested. When the second IGBT high-power device works normallyS 3 Keep conducting, but when the short-circuit fault of uncontrollable large current occurs, the second IGBT high-power deviceS 3 And immediately shutting down the power tube to protect the power tube aging test system.
The direct current SSCB is matched with the controllable load, and the FPGA control panel sends a control signal to the controllable load so that the controllable load is periodically and repeatedly switched between a rated state and a short-circuit state; the FPGA control board is connected with the controllable load through the current detection circuit and controls the power tube to be detectedQ 1 Driving voltage, power tube under testQ 1 Drain currentI d And corresponding duration, and circularly testing the aging state of the power tube to be tested;
the copper radiator, the water cooling bar and the constant temperature water bath device are power tubes to be measuredQ 1 Providing constant shell temperature, namely heating water in a constant-temperature water bath device to constant temperature, pumping the water into a copper radiator (with a water channel inside), and enabling the copper radiator to pass through a thermal interface material and a power tube to be measuredQ 1 The heat dissipation shell is contacted, water with constant temperature flows into the water cooling row after passing through the copper heat radiator, and a heat dissipation fan is arranged outside the water cooling row and is used for cooling the power tube to be measuredQ 1 The heat is taken away, and the water is cooled;
the cooled water enters the constant-temperature water bath device again, is heated to a constant temperature and then is pumped to the copper radiator again, so that the power tube to be measured is ensuredQ 1 The shell temperature was constant.
Current detection circuit and current detection of direct current SSCBThe circuits share one set of circuits, and the data acquisition module has an electrical isolation function and is used for monitoring the power tube to be measured on lineQ 1 On-resistance and tested power tubeQ 1 The driving voltage of (1).
Fig. 2 is a waveform diagram of the working timing sequence of the present invention, and the specific working principle of the present invention is as follows:
t 0 -t 1 in stage, the FPGA control board sends out multiple control signals to enable the first IGBT high-power deviceS 2 And the power tube to be measuredQ 1 Are all in a turn-off state, and a second IGBT high-power deviceS 3 Is in an on state whereinV S3 、V gs 、V ge Respectively represent a second IGBT high-power deviceS 3 The first IGBT high-power deviceS 2 And the power tube to be measuredQ 1 High level represents on and low level represents off. At the stage of voltageV DC Shell temperatureT C Clamping voltageV op 、Line inductanceL line Etc. are set in accordance with a combination, usuallyV DC About several hundred volts (V), such as 270v,400v, or 800V;T C ranging from ambient temperature to 100 c,V op is thatV DC A multiple, such as 1.5 times, 2 times, or 3 times; line inductanceL line The parasitic inductance of the line is represented, and the value is small and is in the order of microhenries.
t 1 -t 2 In the stage (a) of the method,t 1 at any moment, the FPGA control panel sends out a control signal to ensure that the power tube to be testedQ 1 Has a higher driving voltage value, is recorded asV gson And is in an on state. Setting a load resistanceR L So that the power tube to be measuredQ 1 In a rated conducting stage, the rated current isI N With a turn-on voltage ofV dson Corresponding on-resistance ofR dson =V dson /I N . The second IGBT high-power device in the stageS 3 The first IGBT high-power device still keeps an on stateS 2 The off state is still maintained. It should be noted that this stageI N AndV dson the value should be small so that the power tube power consumption (i.e., P =)I N* V dson ) Small so as not to cause large junction temperature variations, i.e.t 1 Junction temperature of power tube at time andt 2 the temperature difference of the junction of the power tube does not exceed 5 ℃ at any moment so as to simulate the actual working condition of the direct-current solid-state circuit breaker and facilitate the subsequent evaluation of the power tube to be tested by utilizing the on-resistance and the driving voltage at the stageQ 1 Degree of aging of (2). Duration of the same timet on Longer, on the order of seconds. The phase data monitoring part pairI N ，V dson AndV gson and accurately acquiring and storing the data in real time on line, and simultaneously comparing the data with the threshold value of the on-resistance and the drop threshold value of the driving voltage in the rated on-state when the tested power tube fails in real time to judge whether to finish the aging test.
t 2 -t 3 Stage of second IGBT high power deviceS 3 Remain on, butt 2 At any moment, the FPGA control board sends out a control signal, and the first IGBT high-power deviceS 2 Starting to conduct, the power tube to be measuredQ 1 Drain currentI d (or direct SSCB input currentI SSCB ) The current is suddenly increased, at the moment, after the current detection circuit detects the current value, the FPGA control panel immediately responds, and the detected power tube is reducedQ 1 IsV gs To limitI d Will eventually be in the form of a current closed loopI d To a desired value, i.e.I Limit In the course of whichV gs The value gradually decreases and the average value is recordedV gLimit . Duration of this phaset sc1 The values are small, ranging from tens of microseconds to milliseconds. But does notI Limit The value is larger according tot sc1 The difference in the numerical value is that,I Limit the value being the rated on-currentI N A multiple of, ranging from about 1.5 to 10 times,V gLimit the value changes near the starting voltage of the power tube and is less than the driving voltage in the rated conduction stageV gson . The phase data monitoring part pairI Limit AndV gLimit accurately acquiring and storing the drain-source voltage of the power tube to be measured in real time on line at the stageV ds Greater value, and DC bus voltageV DC The values are close, and the voltage value can be clamped to a lower value such as volts due to the action of the on-line measurement circuit of the breakover voltage, so that the rated breakover stage is ensuredV dson The on-line accurate measurement is carried out; this stageV gLimit And the value is accurately measured by the drive voltage on-line measuring circuit, is finally acquired and stored by the data acquisition module, and is compared with the rising threshold of the average value of the drive voltage in the current limiting stage when the power tube to be measured fails in real time to judge whether the aging test is finished.
t 3 -t 4 Stage (a) ofS 3 Remain on, butt 3 At the moment, the current limiting is finished, the FPGA control panel sends out a control signal, and the power tube to be testedQ 1 Is reduced to a negative value, is in an off state, but due to the current limiting inductanceL line There is still a large amount of energy in it, which needs to be dissipated through MOV and measured power tubeQ 1 Is generated higher across the drain and source thanV DC Clamping voltage ofV op . Duration of this phaset sc2 ByL line AndI Limit is usually also in the order of microseconds.
t 4 -t 5 Stage (a) ofS 3 The on state is still maintained.t 4 Time of dayL line The energy in the first IGBT is totally consumed by MOV, the FPGA control board sends out a control signal to make the first IGBT high-power deviceS 2 And turning off, and the load restores the initial state and waits for the beginning of the next aging period. Duration of this phaset off The order of magnitude is also in the second level, so that the power tube to be measured is ensuredQ 1 In thatt 2 -t 3 The high heat generated at this stage can be consumed at this stage, i.e.,T C and restoring the initial state.
Thereafter, the circuit repeatst 1 -t 5 The working state of the stage is not described in detail.
In summary, for the short-circuit current-limiting working condition of the direct-current solid-state circuit breaker, the aging degree of the power tube to be measured is comprehensively monitored in situ on line by using the on-resistance and the driving voltage of the rated conduction stage of the power tube and the average value of the driving voltage of the current-limiting stage under the actual working condition. Compared with other aging test devices and test methods for the power tube, the aging test device has the characteristics of high aging test efficiency, capability of comprehensively representing the aging degree of the power tube on line in situ, and particular suitability for the aging test of the power tube under the short-circuit current-limiting working condition of the direct-current solid-state circuit breaker.
DC voltage source and second IGBT high-power deviceS 3 Driving circuit three, isolating circuit four, power tube to be testedQ 1 The device comprises a voltage dependent resistor MOV, a driving circuit I, a copper radiator, a water cooling bar, a constant temperature water bath device and a detection resistorR Sense Current detection circuit and line inductorL line The second isolation circuit, the third isolation circuit, the FPGA control board and the first IGBT high-power deviceS 2 A second drive circuit and a load resistorR L The components of the isolation circuit I, the on-line measurement circuit of the conduction voltage, the on-line measurement circuit of the driving voltage, the current detection circuit and the data acquisition module can be of various types in the prior art, and the technical personnel in the field can adoptAccording to the actual requirement, the proper model is selected, and the embodiment is not illustrated.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, it is possible to make various improvements and modifications without departing from the technical principle of the present invention, and those improvements and modifications should be considered as the protection scope of the present invention.

Claims (9)

1. The aging test device for the power tube of the direct current solid-state circuit breaker is characterized by comprising a direct current power protection power supply, a direct current SSCB and a data monitoring and controllable load, wherein the direct current power protection power supply is electrically connected with the direct current SSCB which is electrically connected with the data monitoring and controllable load;
the direct current SSCB comprises a power tube to be measuredQ 1 Piezoresistor MOV, driving circuit I and driving resistorR g Copper radiator, water cooling bar, constant temperature water bath device and detection resistorR Sense Current detection circuit and line inductorL line The isolation circuit II, the isolation circuit III and the FPGA control panel;
power tube to be measuredQ 1 The drain electrode of the power transistor is connected with a point B, and the power transistor to be measuredQ 1 The grid electrode of the power transistor is connected with the G point and the power transistor to be measuredQ 1 The source of (2) is connected with the point D; one end of the voltage dependent resistor MOV is connected with the point B, and the other end of the voltage dependent resistor MOV is connected with the point D;
first drive circuit through drive resistorR g The circuit ground of the first driving circuit and the circuit ground of the current detection circuit are both connected with a first control ground; the water outlet of the constant-temperature water bath device is communicated with the water inlet of the copper radiator, and the water outlet of the copper radiator is communicated with the water inlet of the constant-temperature water bath device through a water cooling row;
the FPGA control panel is connected with the first driving circuit through the third isolating circuit, the FPGA control panel is communicated with the current detection circuit through the second isolating circuit, and one end of the current detection circuit and the detection resistorR Sense One end of the current detection circuit is connected with the point D, and the other end of the current detection circuit and the detection resistorR Sense The other ends of the two are connected with the point E;
e point and line inductorL line Is connected to a line inductorL line The other end is connected with the point F.
2. The device for testing the aging of a power tube of a DC solid state circuit breaker according to claim 1,
the direct current power protection power supply comprises a direct current voltage source and a second IGBT high-power deviceS 3 The driving circuit III and the isolation circuit IV;
the anode of the direct current voltage source and the second IGBT high-power deviceS 3 The collector electrodes of the direct current voltage source are connected with the point A, the cathode of the direct current voltage source is connected with the point H, and the point H is electrically connected with the power ground; second IGBT high-power deviceS 3 The emitter of the second IGBT is connected with a point B, the point B is connected with a second control ground, and the second IGBT high-power deviceS 3 The grid and the driving circuit are connected with a point C; the third driving circuit takes the second control ground as a circuit reference ground, and is connected with the FPGA control panel through the fourth isolating circuit.
3. The device for testing the aging of the power tube of the DC solid state circuit breaker according to claim 2,
the controllable load comprises a first IGBT high-power deviceS 2 A second drive circuit and a load resistorR L And an isolation circuit one;
first IGBT high-power deviceS 2 Collector and load resistorR L One end of the first IGBT high-power device is connected with the point FS 2 Emitter and load resistor ofR L The other end of the first switch is connected with a point H, and the point H is connected with a power ground;
first IGBT high-power deviceS 2 The grid and the second driving circuit are connected with the point I, and the second driving circuit is connected with the point H; and the second driving circuit is connected with the FPGA control panel through the first isolating circuit.
4. The device for testing the aging of a power tube of a DC solid state circuit breaker according to claim 3,
the data monitoring comprises an on-line measuring circuit of the breakover voltage, an on-line measuring circuit of the driving voltage, a current detecting circuit and a data acquisition module,
the input end, the point B and the point D of the on-line voltage measuring circuit are connected, and the output end of the on-line voltage measuring circuit is connected with the data acquisition module; the input end, the point G and the point D of the driving voltage online measurement circuit are connected, and the output end of the driving voltage online measurement circuit is connected with the data acquisition module; the input end, the point E and the point D of the current detection circuit are connected, and the output end of the current detection circuit is connected with the data acquisition module.
5. The testing method of the power tube aging testing device of the direct current solid-state circuit breaker is characterized in that the power tube aging testing device of the direct current solid-state circuit breaker is adopted as an execution main body, and the following steps are realized:
obtaining actual DC voltage source voltage under different combinations of DC SSCB short circuit current limiting conditionsV DC The shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limiting of the power tube with the known model is turned off and the actual line inductance value;
actual DC voltage source voltage under DC SSCB short-circuit current-limiting working condition based on different combinationsV DC Obtaining a relation curve of a corresponding current limiting current value and a maximum current limiting time by the shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limiting of the power tube with the known model is turned off and the actual line inductance value;
obtaining a power tube to be measuredQ 1 On-resistance threshold of (1), drop threshold of driving voltage, and rise threshold of driving voltage average value;
setting the current limiting current value, the current limiting time, the shell temperature and the tested power tube of the power tube aging test device of the direct current solid-state circuit breaker under different combinations under the direct current SSCB short circuit current limiting working condition according to the relation curve of the current limiting current value and the maximum current limiting timeQ 1 Voltage value between drain and source electrodes and line inductance value when current limiting is turned off, power tube of known type and power tube to be testedQ 1 The models are the same;
the data acquisition module acquires data of a power tube aging test device of the direct-current solid-state circuit breaker;
obtaining a power tube to be measuredQ 1 An on-resistance threshold value, a drop threshold value of the driving voltage, and a rise threshold value of the average value of the driving voltage when failing due to aging;
and judging whether to stop the work of the power tube aging test device of the direct current solid-state circuit breaker or not according to the data of the power tube aging test device of the direct current solid-state circuit breaker acquired by the data acquisition module, the threshold value of the on-resistance, the drop threshold value of the driving voltage and the rise threshold value of the average value of the driving voltage.
6. The method for testing the device for testing the degradation of a power tube of a DC solid state circuit breaker according to claim 5,
actual direct-current voltage source voltage under direct-current SSCB short-circuit current-limiting working condition based on different combinationsV DC Obtaining a relation curve of a corresponding current limiting current value and a maximum current limiting time by the shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limiting of the power tube with the known model is turned off and the actual line inductance value, and realizing the following steps:
step 1, keeping a direct-current voltage source in a power tube aging test device of a direct-current solid-state circuit breaker and a power supply for maintaining the work of the power tube aging test device of the direct-current solid-state circuit breaker in a turn-off state, measuring grid-source resistance and drain-source resistance of power tubes of known models by using a universal meter, and obtaining initial grid-source resistance of the power tube of the a-th known model and initial drain-source resistance of the power tube of the a-th known model;
step 2, setting a shell temperature for the power tube of a known model by using a constant-temperature water bath device in the power tube aging test device of the direct-current solid-state circuit breaker;
second IGBT high power in power tube aging test device of direct current solid-state circuit breaker is kept by FPGA control panelDevice with a metal layerS 3 And known type power tubeQ 1 In the on state, the first IGBT high-power deviceS 2 In the off state, the voltage of the DC voltage source is setV DC And a load resistorR L The conduction current reaches a set conduction current value, and the current detection circuit measures the conduction current to obtain the conduction current;
measuring the drain-source voltage of the power tube to be measured by the on-line measuring circuit of the breakover voltageV ds Acquiring the initial on-resistance value of the a-th power tube with the known model by using the on-current measured by the current detection circuit and the set shell temperature, wherein a is a positive integer;
step 3, taking the obtained value which is 0.001 times of the initial grid source resistance value of the a-th known model power tube as a set gate source resistance threshold value of the a-th known model power tube, taking the obtained value which is 0.001 times of the initial drain source resistance value of the a-th known model power tube as a set drain source resistance threshold value of the a-th known model power tube, and taking the obtained value which is 1.2 times of the initial on-resistance value of the a-th known model power tube as a set on-resistance threshold value of the a-th known model power tube;
step 4, according to the actual DC voltage source voltage under the short-circuit current-limiting working condition of a certain combined DC SSCBV DC Setting the a current limiting current value and the current limiting time by using an FPGA control board, and carrying out single short circuit current limiting test;
acquiring the actual grid source resistance of the power tube of the a-th known model, the actual drain source resistance of the power tube of the a-th known model and the actual on-resistance of the power tube of the a-th known model;
step 5, if the actual grid-source resistance of the a-th known model power tube is smaller than the grid-source resistance threshold of the a-th known model power tube, the actual drain-source resistance of the a-th known model power tube is smaller than the drain-source resistance threshold of the a-th known model power tube or the actual on-resistance of the a-th known model power tube is larger than the drain-source resistance threshold of the a-th known model power tube, the test is stopped, the direct-current voltage source stops supplying power, the maximum current limiting time of the a-th known model power tube under the set current limiting value under the combination is recorded, the step 6 is entered, otherwise, the combination and the current limiting value are kept unchanged, the current limiting time is increased, and the step 4 is executed;
step 6, replacing the a-th known model power tube in the step 1-5 by the a + 1-th known model power tube, changing the current limiting current value to be the a + 1-th current limiting current value, and executing the step 1-5 again to obtain the maximum current limiting time of the a + 1-th current limiting current value of the tested power tube under the combination;
step 7, repeating the step 6 until a +1 reaches a set value B, obtaining the maximum current limiting time under B current limiting values, and finally obtaining the actual direct current voltage source voltage under the combined direct current SSCB short-circuit current limiting working condition based on the combined direct current SSCBV DC Obtaining a first relation curve of the current limiting current value and the maximum current limiting time of the combination by the shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limiting of the power tube with the known model is turned off and the actual line inductance value;
step 8, repeating the steps 1-7 for N times (N is more than or equal to 6), obtaining N relation curves of the current limiting current value and the maximum current limiting time under a certain combination in total, and carrying out least square method processing on the obtained N relation curves of the current limiting current value and the maximum current limiting time under the certain combination to finally obtain the relation curve of the current limiting current value and the maximum current limiting time of the combination;
step 9, judging whether to obtain the relation curve between the current limiting current value and the maximum current limiting time under all the combinations, and if not, replacing the actual voltage of the direct current voltage sources of other combinationsV DC And (3) executing the step 1 according to the shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limiting of the power tube with the known model is turned off and the actual line inductance value, and if so, ending the operation.
7. The method for testing the aging apparatus of the power tube of the DC solid state circuit breaker according to claim 6,
setting the voltage of the direct current voltage source according to the relation curve of the current limiting current value and the maximum current limiting time under all the combinations obtained in the step 9V DC The shell temperature of the power tube to be tested, the voltage value between drain and source electrodes when the current limiting of the power tube to be tested is turned off, the actual line inductance value, the current limiting current value and the current limiting time, and then the power tube is subjected to aging test;
the method for testing the device for testing the degradation of a power tube of a DC solid state circuit breaker according to claim 6,
obtaining the power tube to be measuredQ 1 The on-resistance threshold value is realized by the following steps when the aging fails:
obtaining a power tube to be measuredQ 1 On-resistance threshold value in rated on-phaseR dson-TH Power tube to be measuredQ 1 The shell temperature and the conduction current in the rated conduction stage are set according to the step 3;
obtaining a power tube to be measured by utilizing a conduction voltage on-line measuring circuitQ 1 Initial on-resistance value ofR dson-INI ；
Taking 1.2 times of initial on-resistance value as the power tube to be measuredQ 1 On-resistance threshold ofR dson-TH ；
Obtaining a power tube to be measuredQ 1 Threshold drop of drive voltage at failure due to agingV gs—HTH The method is realized by the following steps:
obtaining a power tube to be measured by using a driving voltage on-line measuring circuitQ 1 Initial driving voltage value ofV gs Obtaining the power tube to be measuredQ 1 Initial driving resistance value ofR g ；
Obtaining a power tube to be measuredQ 1 Of the driving voltageV gs—HTH ：
V gs—HTH =V gs -I gmax *R g ；
WhereinI gmax =1mA；
Obtaining a power tube to be measuredQ 1 Rising threshold of average value of driving voltage at time of failure due to agingV gs—LTH The method is realized by the following steps:
obtaining actual measured power tubeQ 1 Initial value of average value of driving voltage in current limiting stageV gLimit-INI ；
Will be provided withV gLimit-INI Is 1.2 times as the power tube to be measuredQ 1 Drive voltage rise threshold for current limit phaseV gs-LTH 。
8. The testing method of the aging testing device for the power tube of the direct current solid-state circuit breaker is characterized in that the current limiting time is less than the maximum current limiting time, and the time of the rated on-phase and the off-phase reaches the second level.
9. The method for testing the aging apparatus of the power tube of the DC solid state circuit breaker according to claim 5,
the method comprises the following steps of collecting data, an on-resistance threshold value, a drop threshold value of driving voltage and a rise threshold value of a driving voltage average value of a power tube aging test device of the direct-current solid-state circuit breaker according to a data collection module, judging whether to stop the work of the power tube aging test device of the direct-current solid-state circuit breaker, and realizing the following steps:
collecting data of a power tube aging test device of a direct current solid-state circuit breaker, wherein the data comprises an on-resistance in a rated conduction stage, a driving voltage excess in the rated conduction stage and a driving voltage average value in a current limiting stage;
if the on-resistance of the rated on-state collected by the data collection module exceeds the on-resistance threshold value, the driving voltage of the rated on-state collected by the data collection module exceeds the drop threshold value of the driving voltage, or the average value of the driving voltage of the current-limiting stage collected by the data collection module exceeds the rise threshold value of the average value of the driving voltage, the power tube aging test device of the direct current solid-state circuit breaker stops working.
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