CN115595534B - Conductive lanthanum aluminate/strontium titanate film and preparation method thereof - Google Patents
Conductive lanthanum aluminate/strontium titanate film and preparation method thereof Download PDFInfo
- Publication number
- CN115595534B CN115595534B CN202211317501.3A CN202211317501A CN115595534B CN 115595534 B CN115595534 B CN 115595534B CN 202211317501 A CN202211317501 A CN 202211317501A CN 115595534 B CN115595534 B CN 115595534B
- Authority
- CN
- China
- Prior art keywords
- film
- laalo
- srtio
- conductive
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- -1 lanthanum aluminate Chemical class 0.000 title description 4
- 229910052746 lanthanum Inorganic materials 0.000 title description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 title description 2
- 229910002367 SrTiO Inorganic materials 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000001105 regulatory effect Effects 0.000 claims abstract description 12
- 238000004544 sputter deposition Methods 0.000 claims description 33
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 22
- 229910052786 argon Inorganic materials 0.000 claims description 13
- 229910000831 Steel Inorganic materials 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- 239000010959 steel Substances 0.000 claims description 11
- 238000005477 sputtering target Methods 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 4
- 239000002390 adhesive tape Substances 0.000 claims description 3
- 239000013077 target material Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 72
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 19
- 239000000463 material Substances 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
The application provides a conductive LaAlO 3 /SrTiO 3 Film and preparation method thereof, namely SrTiO 3 A layer of LaAlO is grown on the substrate 3 Thin films, thereby forming heterostructures with conductive properties. Belongs to the technical field of film material preparation. The application regulates and controls the value of LAO/STO film resistance by manually regulating the angle alpha and the distance s between the substrate and the target. The film prepared by the application has high quality, good conductivity, film thickness of 10-30 nm, no impurity and no fracture in the whole, smooth and flat surface and variation range within picometers. The application truly realizes the preparation of the LAO/STO film with good conductivity by magnetron sputtering, and provides a new thought and scheme for researchers of a two-dimensional oxide interface superconducting system.
Description
Technical Field
The application relates to the technical field of film material preparation, in particular to a conductive LaAlO 3 /SrTiO 3 A film and a method for preparing the same.
Background
There are many methods of magnetron sputtering to make LAO/STO films in the prior art, but most LAO/STO films are not conductive. Because LAO and STO are both insulated, magnetron sputtering often causes uneven element content in a sputtered film aiming at a special target, and the element content is closely related to the conductivity of the film, the preparation process has a large limit.
A method for preparing conductive LAO/STO film by magnetron sputtering is "90 degree off-axis sputtering method", wherein when the angle between the substrate 1 and the sputtering target 2 is 90 degree, and the substrate 3 is heated to 700 deg.C or higher, sputtering is performed, and the prepared LAO/STO film has certain conductivity [1-2] 。
[1] Podkaminer J P,Hernandez T,Huang M,et al.Creation of a two-dimensional electron gas and conductivity switching of nanowires at the LaAlO 3 /SrTiO 3 interface grown by 90°off-axis sputtering[J].Applied Physics Letters,2013,103(7):071604.
[2] Yin C,Krishnan D,Gauquelin N,et al.Controlling the interfacial conductance in LaAlO 3 /SrTiO 3 in 90°off-axis sputter deposition[J].Physical Review Materials,2019,3(3):034002.
The method for preparing the conductive LAO/STO film by magnetron sputtering is only suitable for the off-axis sputtering technology with a specific structure, is difficult to popularize, has high requirements on temperature, and can not be realized by the existing magnetron sputtering instrument. Therefore, the universality of the existing 90-degree off-axis sputtering method is not strong; the 90-degree off-axis sputtering method has the problems that the operation condition is higher and the operation is required to be carried out at higher temperature. The application designs a conductive LaAlO 3 /SrTiO 3 A film and a method for preparing the same.
Disclosure of Invention
The application provides a conductive LaAlO 3 /SrTiO 3 The purpose of the film and the preparation method thereof is to solve the problems existing in the background technology.
The application specifically relates to a method for preparing LaAlO by magnetron sputtering 3 /SrTiO 3 Method of (LAO/STO) film, i.e. in SrTiO 3 A layer of LaAlO is grown on the substrate 3 Thin films, thereby forming heterostructures with conductive properties. The distance s between the Substrate (STO) and the target (LAO) and the angle alpha between the Substrate (STO) and the target (LAO) are adjusted by a tool in a magnetron sputtering instrument so as to determine the sputtering range of aluminum ions, and the aluminum ions have stronger oxygen absorption and can be combined with the STO substrate to form oxygen vacancies, thus preparing the conductive LaAlO 3 /SrTiO 3 (LAO/STO) film. The application provides a new idea for preparing the conductive LAO/STO film by magnetron sputtering, so that the conductive LAO/STO film is not influenced by the structure and temperature conditions of the magnetron sputtering instrument, is suitable for most magnetron sputtering instruments, and has strong practicability.
Embodiments of the present application provide a conductive LaAlO 3 /SrTiO 3 The preparation method of the film comprises the following steps:
s1, fixing a steel rule tool with a base plate by adopting double faced adhesive tape, keeping the lower half part of the steel rule tool parallel to a sputtering target, and taking a STO substrate in a drying oven to be opposite to an etching ring of an LAO target material, so that the normal angle alpha of the substrate and the etching ring is 180 degrees, and the linear distance S is 3-5 cm;
s2, regulating the pressure of the vacuum chamber by adopting a molecular pump, opening a process valve by 30%, introducing argon for starting, pre-sputtering a target after the brightness is stable, regulating the argon pressure, sputtering a target baffle after the brightness is stable, and obtaining the conductive LaAlO 3 /SrTiO 3 A film.
Further, the linear distance S between the STO substrate and the etching ring of the LAO target is 3.5cm.
Further, the vacuum chamber pressure is regulated to 5 x 10 -4 Pa, argon pressure was adjusted to 0.8Pa.
Further, the pre-sputtering time is 5-10 min, and the sputtering time is 20min.
Further, in the step S2, the electromagnetic power is set to 40W, and the temperature is room temperature.
Further, the conductive LaAlO 3 /SrTiO 3 The thickness of the film is 10 nm-30 nm.
Further, the STO substrate dimensions were 3mm by 0.5mm.
Based on an inventive general concept, the embodiment of the application also provides a conductive LaAlO obtained by the preparation method 3 /SrTiO 3 Film of conductive LaAlO 3 /SrTiO 3 The thickness of the film is 10 nm-30 nm.
Further, the conductive LaAlO 3 /SrTiO 3 The resistance value of the film is 900 omega-10 KΩ. Non-conductive resistance value [ ]>200MΩ)。
The application controls the resistance value of the LAO/STO film by manually adjusting the angle alpha and the distance s between the substrate and the target, srTiO 3 Is a sample substrate, laAlO 3 Forming a layer of LAO film on the STO substrate by magnetron sputtering as target material, namely, forming a layer of LAO film on the SrTiO sample 3 Coating with a layer of LaAlO 3 The angle alpha and the distance s between the film and the substrate and the target are also relatively high in portability due to relatively small relation between the film and the substrate and between the film and the target and the temperature and the performance of the device.
The application truly realizes the preparation of the conductive LAO/STO film by magnetron sputtering, and provides a new thought and scheme for scientific researchers of a two-dimensional oxide interface superconducting system.
The scheme of the application has the following beneficial effects:
1. the method has strong universality, can be applied to different types of magnetron sputtering instruments, and has strong practicability;
2. the method has strong portability, and can be transferred to other magnetron sputtering film preparation applications after simple modification;
3. the preparation method has the advantages of simple operation, low cost and clear parameters;
4. the film prepared by the application has high quality and good conductivity, the thickness of the film is 10-30 nm, the whole film has no impurity or fracture, the surface of the film is smooth and flat, the film is shown in fig. 10, the variation range is within picometers, and the accompanying fig. 6-9 are mean square error roughness diagrams.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a device for producing conductive LAO/STO films by 90 degree off-axis sputtering in the background art;
FIG. 2 is a schematic illustration of the preparation of conductive LAO/STO (LaAlO) 3 /SrTiO 3 ) A device diagram of the film;
FIG. 3 is a schematic illustration of the preparation of conductive LAO/STO (LaAlO) 3 /SrTiO 3 ) Sputtering a partial view of the film;
FIG. 4 is a schematic illustration of the preparation of conductive LAO/STO (LaAlO) 3 /SrTiO 3 ) A side quality map of the film;
FIG. 5 is a schematic illustration of the preparation of conductive LAO/STO (LaAlO) 3 /SrTiO 3 ) A side enlarged mass map of the film;
FIG. 6 is a schematic illustration of the preparation of conductive LAO/STO (LaAlO) 3 /SrTiO 3 ) A graph of resistance of the film versus S;
FIG. 7 is a schematic illustration of the preparation of conductive LAO/STO (LaAlO) 3 /SrTiO 3 ) S of the film is a film surface map of 4cm, wherein Ra is the mean square error roughness;
FIG. 8 is a schematic illustration of the preparation of conductive LAO/STO (LaAlO) 3 /SrTiO 3 ) S of the film is a film surface map of 4.3cm, wherein Ra is the mean square error roughness;
FIG. 9 is a schematic illustration of the preparation of conductive LAO/STO (LaAlO) 3 /SrTiO 3 ) The S of the film is a 7.5cm film surface plot, where Ra is the mean square error roughness.
FIG. 10 is a schematic illustration of the present applicationExample preparation of conductive LAO/STO (LaAlO) 3 /SrTiO 3 ) S of the film is a film surface diagram of 4cm, and the right side is a change zone of the whole film height.
[ reference numerals description ]
1-a substrate; 2-sputtering target; 3-a substrate; 4-steel rule tools; 5-a vacuum chamber; 6-etching the ring.
Detailed Description
In order to make the technical problems, technical solutions and advantages to be solved more apparent, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
Unless defined otherwise, all technical and scientific terms used hereinafter have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the scope of the present application.
Unless otherwise specifically indicated, the various raw materials, reaction gases, instruments and equipment, etc. used in the present application are commercially available or can be prepared by existing methods.
There are many methods of magnetron sputtering to make LAO/STO films in the prior art, but most LAO/STO films are not conductive. Because LAO and STO are insulated, magnetron sputtering often causes non-uniformity of elements in a sputtered film aiming at a special target, and the element content is closely related to the conductivity of the film, the preparation process has a large limit.
The method for preparing the conductive LAO/STO film by magnetron sputtering is only suitable for the off-axis sputtering technology with a specific structure, is difficult to popularize, has high requirements on temperature, and can not be realized by the existing magnetron sputtering instrument. Therefore, the universality of the existing 90-degree off-axis sputtering method is not strong; the 90-degree off-axis sputtering method has the problems that the operation condition is higher and the operation is required to be carried out at higher temperature. The application designs a conductive LaAlO 3 /SrTiO 3 A method for preparing a film.
The present application addresses the existing problems by embodiments of the present application to provide a conductive LAO/STO (LaAlO 3 /SrTiO 3 ) Thin sheetA method of preparing a film comprising the steps of:
s1, fixing a steel rule tool with a base plate by adopting double faced adhesive tape, keeping the lower half part of the steel rule tool parallel to a sputtering target, and taking a STO substrate opposite to an etching ring in a drying oven, so that the normal angle alpha of the etching ring of the STO substrate and the LAO target is 180 degrees, and the linear distance S is 3-5 cm;
s2, regulating the pressure of the vacuum chamber by adopting a molecular pump, opening a process valve by 30%, introducing argon for starting, pre-sputtering a target after the brightness is stable, regulating the argon pressure, sputtering a target baffle after the brightness is stable, and obtaining the conductive LaAlO 3 /SrTiO 3 A film.
Further, the linear distance S between the STO substrate and the etching ring is 3.5cm.
Further, the vacuum chamber pressure is regulated to 5 x 10 -4 Pa, argon pressure was adjusted to 0.8Pa.
Further, the pre-sputtering time is 5-10 min, and the sputtering time is 20min.
Further, in the step S2, the electromagnetic power is set to 40W, and the temperature is room temperature.
Further, the substrate dimensions are 3mm by 0.5mm.
Based on an inventive general concept, the embodiment of the application also provides a conductive LaAlO obtained by the preparation method 3 /SrTiO 3 Film of conductive LaAlO 3 /SrTiO 3 The thickness of the film is 10 nm-30 nm.
Further, the conductive LaAlO 3 /SrTiO 3 The resistance value of the film is 900 omega-10 KΩ. Non-conductive resistance value [ ]>200MΩ)。
The application controls the resistance of the LAO/STO film by manually adjusting the angle alpha and the distance s between the substrate and the target, and the angle alpha and the distance s between the substrate and the target have stronger portability due to smaller relation between the substrate and the temperature and the performance of equipment.
Examples
Conductive LaAlO 3 SrTiO 3 The preparation method of the film comprises the following steps:
s1, as shown in fig. 2, a steel ruler self-made tool 4 is fixed with a substrate 3 by using double faced adhesive in a vacuum chamber 5, the lower half part of the steel ruler self-made tool 4 is kept at a parallel distance from a sputtering target 2 (namely, the normal angle of the lower half part of the steel ruler self-made tool 4 and the sputtering target 2 is kept at 180 °), and then a STO substrate 1 (3 mm by 0.5 mm) is taken in a drying box to be opposite to an etching ring 6, and the linear distance S between the steel ruler self-made tool and the substrate is kept at 3.5cm.
S2, using a molecular pump to vacuumize the back bottom in the vacuum chamber 5 to 5 x 10 -4 Pa, then opening a process valve to 30%, using RF power to 40W, introducing argon to start up, and pre-sputtering the target for 5min after the brightness is stable so as to remove the surface of the target or the stored pollutants. Then the argon pressure is regulated to 0.8pa, the target baffle is opened for sputtering, and the sputtering time is 20min.
And normally and sequentially closing the equipment after sputtering, taking out the sample with the film coated, and measuring the conductivity of the sample by using a wire welder and a universal meter to obtain the resistance of the sample with 987Ω -4kΩ (the periphery of the same sample is provided with 4-6 welding spots).
Control group
A preparation method of the LAO/STO film comprises the following steps:
s1, the STO substrate 1 is placed at the base plate 3 in an unmodified vacuum chamber 5 (note that no 4 is present at this time).
S2, pumping back vacuum in the vacuum chamber to 5 x 10 by using a molecular pump -4 Pa, then opening a process valve to 30%, using RF power to 40W, introducing argon to start up, and pre-sputtering the target for 5min after the brightness is stable so as to remove the surface of the target or the stored pollutants. And then regulating the argon pressure to 0.8pa, opening a target baffle plate for sputtering after the brightness is stable, wherein the sputtering time is 20min.
And normally and sequentially closing the equipment after sputtering, taking out a sample with a film coated, measuring the conductivity of the sample by using a wire welder and a universal meter, and measuring the resistance exceeding a measuring range (namely more than 200MΩ and default non-conduction) (taking 4-6 welding spots around the same sample).
While the foregoing is directed to the preferred embodiments of the present application, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present application, and such modifications and adaptations are intended to be comprehended within the scope of the present application.
Claims (8)
1. Conductive LaAlO 3 /SrTiO 3 The preparation method of the film is characterized by comprising the following steps:
s1, fixing a steel rule tool with a substrate by adopting double faced adhesive tape, keeping the lower half part of the steel rule tool parallel to a sputtering target, and taking SrTiO in a drying oven 3 Substrate and target LaAlO 3 The etching ring is opposite to the substrate, so that the normal angle alpha of the substrate and the etching ring is 180 degrees, and the linear distance S is 3-5 cm;
s2, regulating the pressure of the vacuum chamber by adopting a molecular pump, opening a process valve by 30%, introducing argon for starting, pre-sputtering a target material after the brightness is stabilized, regulating the argon pressure, opening a target baffle plate for sputtering after the brightness is stabilized, and obtaining the conductive LaAlO 3 /SrTiO 3 A film.
2. The electrically conductive LaAlO of claim 1 3 /SrTiO 3 The preparation method of the film is characterized in that the linear distance S between the STO substrate and the etching ring of the target LAO is 3.5cm.
3. The electrically conductive LaAlO of claim 1 3 /SrTiO 3 The preparation method of the film is characterized in that the pressure of the vacuum chamber is regulated to be 5 x 10 -4 Pa, argon pressure was adjusted to 0.8Pa.
4. The electrically conductive LaAlO of claim 1 3 /SrTiO 3 The preparation method of the film is characterized in that the pre-sputtering time is 5-10 min, and the sputtering time is 20min.
5. The electrically conductive LaAlO of claim 1 3 /SrTiO 3 The method for preparing the film is characterized in that in the step S2, the electromagnetic power is set to 40W, and the temperature is room temperature.
6. The electrically conductive LaAlO of claim 1 3 /SrTiO 3 A method of producing a film, wherein the STO substrate has a size of 3mm by 0.5mm.
7. A conductive LaAlO obtained by the method of any one of claims 1 to 6 3 /SrTiO 3 A film, characterized in that the conductive LaAlO 3 /SrTiO 3 The thickness of the film is 10-30 nm.
8. The electrically conductive LaAlO of claim 7 3 /SrTiO 3 A film, characterized in that the conductive LaAlO 3 /SrTiO 3 The resistance value of the film is 900 to 10k omega.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211317501.3A CN115595534B (en) | 2022-10-26 | 2022-10-26 | Conductive lanthanum aluminate/strontium titanate film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211317501.3A CN115595534B (en) | 2022-10-26 | 2022-10-26 | Conductive lanthanum aluminate/strontium titanate film and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115595534A CN115595534A (en) | 2023-01-13 |
| CN115595534B true CN115595534B (en) | 2023-11-28 |
Family
ID=84851282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211317501.3A Active CN115595534B (en) | 2022-10-26 | 2022-10-26 | Conductive lanthanum aluminate/strontium titanate film and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115595534B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1725444A (en) * | 2004-07-20 | 2006-01-25 | 中国科学院物理研究所 | Epitaxial growing lanthanum aluminate film material and preparation method on silicon substrate |
| CN101613880A (en) * | 2009-07-17 | 2009-12-30 | 南京航空航天大学 | The method of preparing lanthanum aluminate film by radiofrequency magnetron sputtering |
| KR101547600B1 (en) * | 2015-02-06 | 2015-08-28 | 가천대학교 산학협력단 | Method for conductivity controlling of two dimensional electron gas generated at oxide heterostructure interfaces |
| CN115236141A (en) * | 2022-07-27 | 2022-10-25 | 中国科学技术大学 | Gas sensor, preparation method thereof and method for measuring gas components and gas pressure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101003982B1 (en) * | 2007-10-11 | 2010-12-31 | 한국과학기술원 | Ferroelectric Substance Thin Film Element and manufacturing method thereof |
-
2022
- 2022-10-26 CN CN202211317501.3A patent/CN115595534B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1725444A (en) * | 2004-07-20 | 2006-01-25 | 中国科学院物理研究所 | Epitaxial growing lanthanum aluminate film material and preparation method on silicon substrate |
| CN101613880A (en) * | 2009-07-17 | 2009-12-30 | 南京航空航天大学 | The method of preparing lanthanum aluminate film by radiofrequency magnetron sputtering |
| KR101547600B1 (en) * | 2015-02-06 | 2015-08-28 | 가천대학교 산학협력단 | Method for conductivity controlling of two dimensional electron gas generated at oxide heterostructure interfaces |
| CN115236141A (en) * | 2022-07-27 | 2022-10-25 | 中国科学技术大学 | Gas sensor, preparation method thereof and method for measuring gas components and gas pressure |
Non-Patent Citations (7)
| Title |
|---|
| "Conductivity of LaAlO3/SrTiO3 Interfaces Made by Sputter Deposition";I. M. Dildar et al.;《e-Journal of Surface Science and Nanotechnology》;第619-623页 * |
| "Growing LaAlO3/SrTiO3 interfaces by sputter deposition";Dildar et al.;《AIP ADVANCES》;第067156-1-067156-11页 * |
| "LaAlO3/SrTiO3异质结光存储特性模拟及 电阻图像显示";杨毅等;《湖南工程学院学报（ 自然科学版）》;第45-49页 * |
| "Large-Scale Fabrication of Two Dimensional Electron Gas at the LaAlO3/SrTiO3 Interface";Do Hyun Kim et al.;《Journal of Nanoscience and Nanotechnology》;第8537-8541页 * |
| "Non-magnetic interfaces of LaAlO3/SrTiO3 made by on-axis sputter deposition and the contribution of SrTiO3 substrate";I.M. Dildar et al.;《Journal of Magnetism and Magnetic Materials》;第97-100页 * |
| "Polarity-induced oxygen vacancies at LaAlO3 ÕSrTiO3 interfaces";Zhicheng Zhong et al.;《PHYSICAL REVIEW B》;第165127-1-165127-5页 * |
| 离轴磁控溅射生长钙钛矿外延薄膜;余果;白飞明;文丹丹;张怀武;;真空科学与技术学报(06);第578-585页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115595534A (en) | 2023-01-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1352987A2 (en) | Transparent conductive laminate and process of producing the same | |
| Paek et al. | A study on properties of yttrium-stabilized zirconia thin films fabricated by different deposition techniques | |
| Sønderby et al. | Magnetron sputtered gadolinia-doped ceria diffusion barriers for metal-supported solid oxide fuel cells | |
| Rezugina et al. | Ni-YSZ films deposited by reactive magnetron sputtering for SOFC applications | |
| WO2007042394A1 (en) | A method to deposit a coating by sputtering | |
| CN1269609A (en) | Method for forming transparent conductive film and transparent conductive film formed therefrom | |
| WO2007011894A1 (en) | Physical vapor deposited nano-composites for solid oxide fuel cell electrodes | |
| Lippens et al. | Chemical instability of the target surface during DC-magnetron sputtering of ITO-coatings | |
| WO1994019509A1 (en) | Film forming method and film forming apparatus | |
| Ali et al. | In2O3 deposited by reactive evaporation of indium in oxygen atmosphere—influence of post-annealing treatment on optical and electrical properties | |
| Noda et al. | Characterization of Sn-doped In2O3 film on roll-to-roll flexible plastic substrate prepared by DC magnetron sputtering | |
| KR100212906B1 (en) | Process for producing oxide films and chemical deposition apparatus therefor | |
| JP2009293097A (en) | Sputtering composite target, method for producing transparent conductive film using the same and transparent conductive film-fitted base material | |
| CN115595534B (en) | Conductive lanthanum aluminate/strontium titanate film and preparation method thereof | |
| Uhlenbruck et al. | Application of electrolyte layers for solid oxide fuel cells by electron beam evaporation | |
| Arshi et al. | Effects of nitrogen content on the phase and resistivity of TaN thin films deposited by electron beam evaporation | |
| JPH1088332A (en) | Sputtering target, transparent conductive coating and its production | |
| Cernea | Methods for preparation of BaTiO3 thin films | |
| Dildar et al. | Growing LaAlO3/SrTiO3 interfaces by sputter deposition | |
| Wang et al. | Solid oxide fuel cells with (La, Sr)(Ga, Mg) O3-δ electrolyte film deposited by radio-frequency magnetron sputtering | |
| Uhlenbruck et al. | Electrode and electrolyte layers for solid oxide fuel cells applied by physical vapor deposition (PVD) | |
| KR101013762B1 (en) | Fabrication of bst-pb based pyroclore composite dielectric films for tunability | |
| Solovyev et al. | The performance of intermediate temperature solid oxide fuel cells with sputter deposited La 1-x Sr x CoO 3 interlayer | |
| CN113293353B (en) | Metal-doped zirconium diboride film and preparation method thereof | |
| JPH06299347A (en) | Production of electric insulating platelike material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |