CN115570507A - Preparation and grinding method of grinding disc for grinding large-size wafer - Google Patents
Preparation and grinding method of grinding disc for grinding large-size wafer Download PDFInfo
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- CN115570507A CN115570507A CN202211142875.6A CN202211142875A CN115570507A CN 115570507 A CN115570507 A CN 115570507A CN 202211142875 A CN202211142875 A CN 202211142875A CN 115570507 A CN115570507 A CN 115570507A
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- 238000000227 grinding Methods 0.000 title claims abstract description 119
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 235000012431 wafers Nutrition 0.000 claims description 39
- 238000005498 polishing Methods 0.000 claims description 16
- 238000005520 cutting process Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 7
- 229910001141 Ductile iron Inorganic materials 0.000 claims description 2
- 238000005452 bending Methods 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 7
- 239000012530 fluid Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- 241000950638 Symphysodon discus Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- HOQADATXFBOEGG-UHFFFAOYSA-N isofenphos Chemical compound CCOP(=S)(NC(C)C)OC1=CC=CC=C1C(=O)OC(C)C HOQADATXFBOEGG-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
- B24B37/16—Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/009—Tools not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
The invention discloses a preparation and grinding method of a grinding disc for grinding large-size chips, belonging to the wafer processing technology. The invention provides a novel preparation method of a grinding disc for grinding a wafer, wherein a trapezoidal grinding disc is used for grinding the wafer on two sides, and compared with the traditional double-side grinding equipment for the wafer and the geometric parameters of the ground wafer, after the double-side grinding of the grinding disc provided by the invention is adopted, the bending and warping value of the wafer is obviously reduced, the average thickness difference is small, and the flatness of the wafer surface is good.
Description
Technical Field
The invention relates to a wafer processing method, in particular to a double-side grinding method for a wafer cutting piece.
Background
Wafer processing is an important process in the semiconductor industry and is typically performed after the crystal is prepared and processed into standard wafers for epitaxy and device fabrication. The crystal processing procedure comprises the procedures of cutting, grinding, polishing, chemical mechanical polishing, cleaning, detecting, packaging and the like. Finally obtaining a standard wafer. The requirements of the subsequent process on the wafer are that the surface has no processing defects such as a damaged layer, scratches, orange peel, corrosion pits and the like, and has smaller processing geometric parameters such as thickness difference, bending warpage, surface roughness and the like.
The crystal is cut into a cutting piece, the surface of the cutting piece is rough, the thickness difference of a single piece is large, the thickness of the cutting piece is much thicker than the requirement of a standard product, the factors need to be controlled in the next double-sided grinding process, the double-sided grinding mainly has the effects that the thickness difference of the cutting piece is reduced to the level of one micron or two microns on one hand, the thickness of the cutting piece is reduced to be close to the requirement of the product on the other hand, the thickness of the cutting piece is ten microns to twenty microns more than the thickness of the standard product, and the subsequent polishing and the chemical mechanical polishing are controlled. In addition, in the double-side grinding process, the bending warpage of the grinding sheet is reduced as much as possible, so that the grinding sheet is convenient for subsequent processing and product extension.
In a conventional double-sided grinding process, a grooved cast iron grinding disc is usually used, and the grooves of the upper disc and the lower disc have the same size or the grooves of the upper disc have a slightly smaller size. In the grinding process, the planetary wheel drives the grinding sheet to move in a planetary track, grinding fluid flows in the grinding sheet, the upper grinding disc and the lower grinding disc move relatively, the grinding fluid is distributed to two side faces of the grinding sheet under the action of the grooves, and the grinding sheet is removed by utilizing the three-body motion of the grinding disc, the grinding fluid and the grinding sheet. The rotation directions of the planetary wheels selected by different processes are different, some of the planetary wheels are consistent with the lower grinding disc, and some of the planetary wheels are consistent with the upper grinding disc.
The conventional double-sided polishing pad is in a standard thin cylindrical shape, and grooves are formed in the lower surface of the upper polishing pad and the upper surface of the lower polishing pad, and the groove pitch of the upper polishing pad is generally smaller than that of the lower polishing pad in consideration of inflow of polishing slurry from above. In the double-sided grinding process, the planetary track motion of the grinding sheet driven by the planetary wheel is the main means for controlling the geometric parameters of the grinding sheet. Wherein the influence caused by the difference of the internal and external rotation speeds of the grinding disc is usually alleviated by adjusting the rotation speed ratio of the gear ring and the central gear of the equipment. However, the adjustment is limited, the rotating speed of the central tooth cannot be increased excessively, and if the rotating speed difference between the central tooth and the gear ring is too large, the planetary gear is easy to distort and deform, and the grinding sheet is broken by external force, so that the rotating speed ratio between the central tooth and the gear ring needs to be adjusted carefully. The planetary track motion of the planetary wheel cannot completely eliminate the speed difference between the center and the edge of the wafer, particularly, the large-size wafer is ground, the equipment size is larger, the rotating speed difference between the inner ring and the outer ring of the grinding disc is larger, the central area of the grinding sheet is more concentrated on the radial center accessory motion of the grinding disc, the amount of relative motion between the central area of the grinding sheet and the grinding disc is smaller, and more time is spent on the edge part of the grinding sheet to move more in the areas of the outer ring and the inner ring of the grinding disc. The appearance of the abrasive sheet often appears like a discus or causes the bending warpage of the abrasive sheet to increase significantly. Particularly, for brittle crystals with high hardness such as sapphire, silicon carbide crystals and other materials, the grinding time is long, and the defect is particularly obvious.
Disclosure of Invention
In order to solve the problems, the invention provides a preparation method of a novel grinding disc for wafer grinding, wherein a trapezoidal grinding disc is used for carrying out double-side grinding on a wafer, and compared with the traditional double-side grinding equipment for the wafer and the geometric parameters of the ground wafer, after the double-side grinding of the grinding disc provided by the invention, the bending and warping value of the wafer is obviously reduced, the average thickness difference is small, and the surface flatness of the wafer is good.
In order to solve the technical problems, the invention adopts the technical scheme that:
the invention relates to a method for preparing a grinding disc for grinding a large-size wafer, which comprises the following steps: (1) Selecting a nodular cast iron material to prepare a grinding disc blank material according to the requirement of equipment size; (2) Removing a certain size inwards from the inner and outer circle positions on the surface of the prepared grinding disc blank; (3) Grooves with certain size are prepared on the surface of the grinding disc at equal intervals.
Further, in the step (2), the removing of the certain size is in a range of 1-4 cm.
Further, in the step (3), the grooves with certain sizes are cross-shaped grooves, the width of each cross-shaped groove ranges from 1 mm to 3 mm, the depth of each cross-shaped groove ranges from 5 mm to 20 mm, and the distance between every two adjacent cross-shaped grooves ranges from 1 cm to 4 cm.
The invention relates to a method for grinding a large-size wafer, which uses a grinding disc to grind and comprises the following steps:
step (1) installing the grinding disc on general double-sided grinding equipment;
step (2) selecting a planetary wheel with a proper size according to the size of the ground cutting piece, placing the cutting piece, and setting a program to carry out double-side grinding;
and (3) after the set grinding time is finished, taking down the grinding sheet to finish the double-side grinding of the cutting sheet.
The invention has the following beneficial effects:
the invention provides a novel preparation method of a grinding disc for grinding a wafer, wherein a trapezoidal grinding disc is used for grinding the wafer on two sides, and compared with the traditional double-side grinding equipment for the wafer and the geometric parameters of the ground wafer, after the double-side grinding of the grinding disc provided by the invention is adopted, the bending and warping value of the wafer is obviously reduced, the average thickness difference is small, and the flatness of the wafer surface is good. The grinding disc provided by the method is simple in preparation method.
Drawings
FIG. 1 is a schematic view of the apparatus of the present invention. 1. And 2, a grinding disc, 2, a cross-shaped groove and 3, a rear step is removed inwards.
Detailed Description
In order to make the technical solutions of the present invention better understood by those skilled in the art, the present invention will be further described in detail with reference to specific examples. The following examples are illustrative only and are not to be construed as limiting the invention.
Aiming at the difficulties in the prior art, the invention provides a novel method for preparing a grinding disc for grinding a wafer, wherein a trapezoidal grinding disc is used for grinding the wafer on both sides, and compared with the traditional double-side grinding equipment for the wafer and the geometric parameters of the ground wafer, after the double-side grinding of the grinding disc, the bending and warping value of the wafer is obviously reduced, the average thickness difference is small, and the flatness of the wafer surface is good.
Examples
The 6-inch superhard silicon carbide crystal cutting blade is subjected to double-side grinding by adopting the grinding disc, the size of the grinding disc is 42.7 cm in inner diameter and 110.7 cm in outer diameter, 4 stainless steel wandering star wheels are adopted, and each wandering star wheel isPlacing 3 slices, grinding with 3 micrometer single crystal diamond grinding fluid for 1 hr, removing thickness of 45 micrometer, and pressing at 70g/cm 2 . After grinding, the TTV of 12 wafers is 0.992-1.453 μm, the bending value is 3.654-11.723 μm, and the warping value is 12.783-21.327 μm. Compared with the grinding process, the grinding process has obvious reduction.
Therefore, the invention provides a novel method for preparing a grinding disc for grinding a wafer, wherein a trapezoidal grinding disc is used for grinding the wafer on two sides, and compared with the traditional double-side grinding equipment for the wafer and the geometric parameters of the ground wafer, after the double-side grinding of the grinding disc provided by the invention, the bending and warping value of the wafer is obviously reduced, the average thickness difference is small, and the flatness of the wafer surface is good.
In the description herein, references to the description of the terms "embodiment," "particular embodiment," "some embodiments," or the like, mean that a particular feature, material, structure, or characteristic described in connection with the embodiment or example is included in at least one embodiment of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment. Furthermore, the particular features, materials, structures, or characteristics described may be combined in any suitable manner in any one or more embodiments.
While embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (4)
1. A preparation and grinding method of a grinding disc for grinding a large-size wafer is characterized in that: the preparation of the grinding disc comprises the following steps:
(1) Selecting a nodular cast iron material to prepare a grinding disc blank material according to the requirement of equipment size;
(2) Removing a certain size inwards from the inner and outer circle positions on the surface of the prepared grinding disc blank;
(3) Grooves with certain size are prepared on the surface of the grinding disc at equal intervals.
2. A method for preparing and polishing a polishing pad for polishing large-sized wafers as recited in claim 1, wherein: in the step (2), the certain size is removed in a range of 1-4 cm.
3. A method for preparing and polishing a polishing pad for polishing large-sized wafers as recited in claim 1, wherein: in the step (3), the grooves with certain sizes are cross-shaped grooves, the width range of the grooves is 1-3 mm, the depth range of the grooves is 5-20 mm, and the distance range of the grooves is 1-4 cm.
4. A method as claimed in claim 1, wherein the grinding disk is prepared by a method comprising the steps of: the grinding method of the grinding disc comprises the following steps:
step (1) installing the grinding disc on general double-sided grinding equipment;
step (2) selecting a planetary wheel with a proper size according to the size of the ground cutting piece, placing the cutting piece, and setting a program to carry out double-side grinding;
and (3) after the set grinding time is finished, taking down the grinding sheet to finish the double-side grinding of the cutting sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211142875.6A CN115570507A (en) | 2022-09-20 | 2022-09-20 | Preparation and grinding method of grinding disc for grinding large-size wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211142875.6A CN115570507A (en) | 2022-09-20 | 2022-09-20 | Preparation and grinding method of grinding disc for grinding large-size wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115570507A true CN115570507A (en) | 2023-01-06 |
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ID=84580708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211142875.6A Pending CN115570507A (en) | 2022-09-20 | 2022-09-20 | Preparation and grinding method of grinding disc for grinding large-size wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115570507A (en) |
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2022
- 2022-09-20 CN CN202211142875.6A patent/CN115570507A/en active Pending
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