CN115552627A - 显示基板及其制备方法、显示装置 - Google Patents
显示基板及其制备方法、显示装置 Download PDFInfo
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- CN115552627A CN115552627A CN202180001059.0A CN202180001059A CN115552627A CN 115552627 A CN115552627 A CN 115552627A CN 202180001059 A CN202180001059 A CN 202180001059A CN 115552627 A CN115552627 A CN 115552627A
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- 239000000758 substrate Substances 0.000 title claims abstract description 209
- 238000002360 preparation method Methods 0.000 title claims description 8
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 description 513
- 239000004065 semiconductor Substances 0.000 description 37
- 239000010408 film Substances 0.000 description 35
- 238000000034 method Methods 0.000 description 33
- 230000008569 process Effects 0.000 description 32
- 238000000059 patterning Methods 0.000 description 25
- 239000003990 capacitor Substances 0.000 description 20
- 238000003860 storage Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 239000002131 composite material Substances 0.000 description 12
- 238000005452 bending Methods 0.000 description 11
- 238000005538 encapsulation Methods 0.000 description 11
- 238000004806 packaging method and process Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000013461 design Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 7
- 229910010272 inorganic material Inorganic materials 0.000 description 7
- 239000011147 inorganic material Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
一种显示基板及其制备方法、显示装置，显示基板包括显示区域和位于所述显示区域一侧的绑定区域，所述绑定区域至少包括引线区；所述显示区域包括多条数据线和多条数据扇出线，所述引线区包括多条引出线；至少一条引出线通过所述数据扇出线与所述数据线连接；在垂直于显示基板的平面内，所述显示基板包括第一导电层、第二导电层、第三导电层和第四导电层，所述第一导电层和所述第二导电层之间、所述第二导电层和所述第三导电层、所述第三导电层和所述第四导电层之间均设置有绝缘层；所述数据线和数据扇出线设置在不同的导电层中。
Description
PCT国内申请，说明书已公开。
Claims (14)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2021/091499 WO2022227005A1 (zh) | 2021-04-30 | 2021-04-30 | 显示基板及其制备方法、显示装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115552627A true CN115552627A (zh) | 2022-12-30 |
Family
ID=83847501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180001059.0A Pending CN115552627A (zh) | 2021-04-30 | 2021-04-30 | 显示基板及其制备方法、显示装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230354655A1 (zh) |
| EP (1) | EP4203053A4 (zh) |
| CN (1) | CN115552627A (zh) |
| WO (1) | WO2022227005A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022133769A1 (zh) * | 2020-12-23 | 2022-06-30 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447887A (zh) * | 2018-02-27 | 2018-08-24 | 上海天马微电子有限公司 | 显示面板和显示装置 |
| US20190018526A1 (en) * | 2018-06-07 | 2019-01-17 | Wuhan Tianma Micro-Electronics Co., Ltd. | Display panel and display device |
| CN112054038A (zh) * | 2019-06-05 | 2020-12-08 | 三星显示有限公司 | 具有延伸的连接线的显示装置 |
| CN112310150A (zh) * | 2019-07-25 | 2021-02-02 | 三星显示有限公司 | 显示装置 |
| CN112510066A (zh) * | 2019-09-16 | 2021-03-16 | 三星显示有限公司 | 显示装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140053626A (ko) * | 2012-10-26 | 2014-05-08 | 삼성디스플레이 주식회사 | 표시 장치 및 유기 발광 표시 장치 |
| CN107305757A (zh) * | 2016-04-21 | 2017-10-31 | 瀚宇彩晶股份有限公司 | 显示装置 |
| CN107123634B (zh) * | 2017-05-18 | 2019-06-07 | 京东方科技集团股份有限公司 | 显示基板的布线结构及其布线方法、显示基板、显示装置 |
| KR20200031738A (ko) * | 2018-09-14 | 2020-03-25 | 삼성디스플레이 주식회사 | 표시 장치 |
| CN109491121B (zh) * | 2018-12-24 | 2022-04-12 | 上海中航光电子有限公司 | 显示面板和显示装置 |
| KR20210008201A (ko) * | 2019-07-10 | 2021-01-21 | 삼성디스플레이 주식회사 | 표시 장치 |
| KR20210018561A (ko) * | 2019-08-05 | 2021-02-18 | 삼성디스플레이 주식회사 | 표시 장치 |
| CN112051691B (zh) * | 2020-09-11 | 2022-04-19 | 厦门天马微电子有限公司 | 阵列基板及显示面板 |
-
2021
- 2021-04-30 WO PCT/CN2021/091499 patent/WO2022227005A1/zh unknown
- 2021-04-30 EP EP21938479.9A patent/EP4203053A4/en active Pending
- 2021-04-30 CN CN202180001059.0A patent/CN115552627A/zh active Pending
- 2021-04-30 US US17/636,369 patent/US20230354655A1/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447887A (zh) * | 2018-02-27 | 2018-08-24 | 上海天马微电子有限公司 | 显示面板和显示装置 |
| US20190018526A1 (en) * | 2018-06-07 | 2019-01-17 | Wuhan Tianma Micro-Electronics Co., Ltd. | Display panel and display device |
| CN112054038A (zh) * | 2019-06-05 | 2020-12-08 | 三星显示有限公司 | 具有延伸的连接线的显示装置 |
| CN112310150A (zh) * | 2019-07-25 | 2021-02-02 | 三星显示有限公司 | 显示装置 |
| CN112510066A (zh) * | 2019-09-16 | 2021-03-16 | 三星显示有限公司 | 显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP4203053A1 (en) | 2023-06-28 |
| EP4203053A4 (en) | 2023-10-25 |
| US20230354655A1 (en) | 2023-11-02 |
| WO2022227005A1 (zh) | 2022-11-03 |
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