CN115550579A - Image sensor reading method and image sensor - Google Patents
Image sensor reading method and image sensor Download PDFInfo
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Abstract
The invention discloses a reading method of an image sensor and the image sensor, which are used for realizing the quick establishment of a bias signal. The image sensor comprises a pixel array consisting of n groups of pixel units for generating image signals; a tail current source module comprising n tail current source tubes generates tail current; the reference source generates a reference signal, a first reference current, and a second reference current. The first bias source converts the first reference current into a first bias voltage and outputs the first bias voltage to the analog-to-digital conversion unit, the second bias source converts the second reference current into a second bias voltage and outputs the second bias voltage to the analog-to-digital conversion unit, and the first bias source and the second bias source jointly drive tail current sources arranged in each group of the pixel array; the pixel array outputs pixel unit output signals of each group. The analog-to-digital conversion unit quantizes the output signals of the pixel units of each group based on the reference signals, and the quantized digital quantity is output to an output signal processing system for subsequent data processing.
Description
Technical Field
The invention relates to the technical field of integrated circuit design, in particular to an image sensor reading method and an image sensor.
Background
Currently, CMOS Image Sensors (CIS) are widely used in the imaging fields of video, surveillance, industrial manufacturing, automobiles, home appliances, and the like. The current applications not only require higher resolution and frame rate of the CIS with reasonable power consumption, which requires a shorter pixel readout period, but also require shorter setup time for various bias signals required for pixel operation and analog-to-digital conversion. When the resolution of the CIS is high, the parasitic resistance and capacitance of the bias signal line are distributed more, the time RC constant is high, and the power consumption cost is high and the noise contributed by the bias signal source is increased by only increasing the bias current to obtain high driving capability to realize high establishment speed. In a conventional method, a single-side bias source provides bias to each group of tail current tubes, when a pixel array is large, the number of groups is large, the time constant of a tail current bias signal line is large, the driving capability of the bias source needs to be increased, and the current is increased to cause large power consumption.
Therefore, it is desirable to provide a new readout scheme for image sensors to improve the above problems.
Disclosure of Invention
The embodiment of the invention provides an image sensor reading method and an image sensor, which are used for shortening a time constant of a bias signal line and realizing the quick establishment of a bias signal on the premise of ensuring the precision of a pixel output signal.
In a first aspect, the present invention provides an image sensor comprising: the pixel array is composed of n groups of pixel units and is used for generating image signals; the tail current source module comprises n tail current source tubes, and each tail current source corresponds to each group of the pixel array one by one; the tail current source is used for generating tail current; a reference source for generating a reference signal and generating a first reference current and a second reference current; a first bias source for converting the first reference current into a first bias voltage and outputting the first bias voltage to an analog-to-digital conversion unit, the first bias source being configured to drive tail current sources configured for each group of the pixel array; the second bias source is used for converting the second reference current into a second bias voltage and outputting the second bias voltage to the analog-to-digital conversion unit, and the second bias voltage is used for commonly driving tail current sources configured in each group of the pixel array; the pixel array is used for outputting pixel unit output signals of each group under the action of bias signals of tail current source tubes corresponding to each group of the pixel array; and the analog-to-digital conversion unit is used for quantizing the output signals of the pixel units of each group based on the reference signal, and outputting the quantized digital quantity to the output signal processing system for subsequent data processing. Wherein n is a positive integer, the first bias source and the second bias source are bias sources with the same specification, and the first reference current and the second reference current are the same.
The image sensor provided by the invention has the beneficial effects that: compared with the traditional biasing circuit, the invention has the advantages that the time constant of a biasing signal line is reduced to 1/4 of the original time constant, the establishment time and the anti-interference stable recovery time are greatly shortened, the driving requirement of the biasing source is reduced, large driving current is not needed, and the power consumption of the biasing source can be reduced.
In one possible embodiment, the bias signal setup time constant for the last group of pixel cells is at most:
wherein, R is the parasitic resistance between the adjacent pixel units, and C is the parasitic capacitance between the adjacent pixel units.
In a second aspect, the present invention provides a readout method of an image sensor, the method comprising: in the reset stage, the gating signal SEL is controlled to be at a low level, and the reset signal RX and the transmission signal TX are both at a high level, so that the transmission tube Mtg, the reset tube Mrst and the amplification tube Msf are all conducted, and the pixel unit is reset;
after the pixel unit is reset, controlling the transmission signal TX to be switched from a high level to a low level, so that the transmission tube Mtg is disconnected;
in the exposure stage, keeping the gating signal SEL at a low level, keeping the transmission signal TX at a low level, controlling the reset signal RX to switch from the high level to the low level, so that the reset tube Mrst and the transmission tube Mtg are disconnected, the gating tube Msel is conducted, and the photodiode PD starts to expose and accumulate electrons;
before a signal reading stage, setting a control signal of a switch to be high level, and driving tail current sources configured in each group of the pixel array by a first bias source and a second bias source together;
in a signal reading stage, a control signal of a switch is switched from a high level to a low level, a first bias source drives tail current sources configured in each group of the pixel array, the connection between a second bias source and the tail current sources is disconnected, and a reset signal RX is controlled to be switched from the low level to the high level, so that a reset tube Mrst is switched on, a floating diffusion region FD point is reset, and a reset potential VRST is read out; and then, the transmission signal TX is controlled to be switched from a low level to a high level, so that the transmission pipe Mtg is conducted, and the exposure integral signal VSIG is read out.
The image sensor reading method provided by the invention has the beneficial effects that: the method comprises the steps that a first bias source and a second bias source drive tail current tubes of all groups together to achieve quick establishment, the proposed bias control mode can meet the requirement of high resolution and high frame rate, the power consumption of the bias sources is controlled within a reasonable range, the newly added bias sources are connected before a pixel reading stage begins because the newly added bias sources possibly have differences with the original bias sources, the newly added second bias sources are disconnected after the pixel reading stage is started, and the original first bias sources continue to provide stable bias signals.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic circuit structure diagram of a CIS standard four-tube pixel unit provided in the prior art;
FIG. 2 is a schematic flow chart of a timing control method for a four-transistor pixel unit according to the prior art;
FIG. 3 is a schematic diagram of a CIS readout circuit architecture provided in the prior art;
fig. 4 is a pixel tail current source bias circuit provided in the prior art;
fig. 5 is a schematic structural diagram of an improved image sensor provided in an embodiment of the present invention;
fig. 6 is a schematic structural diagram of an improved pixel tail current source bias circuit according to an embodiment of the present invention;
fig. 7 is a flowchart illustrating a readout method of an image sensor according to an embodiment of the present invention;
FIG. 8 is a timing diagram of an improved readout circuit according to an embodiment of the present invention.
Detailed Description
Fig. 1 shows a typical CIS architecture, which includes a pixel array, an Analog-to-Digital Converter (ADC), a reference source, timing control, decoding driver, and output signal processing. The pixel array is composed of a number of pixel cells "P" as described in fig. 1. The pixel distribution of the pixel array is divided into two directions, the first direction is defined as a ROW direction, the second direction is defined as a column direction, the pixel array has k ROWs and n columns, the pixel array is read OUT in a ROW-by-ROW mode, the specific sequence is ROW (0), ROW (1), … … ROW (k-1) and ROW (k), each column of the pixel array has an output bus which is PIX _ OUT (0), PIX _ OUT (1), … PIX _ OUT (n-1) and PIX _ OUT (n), each column has a current source tube which is Mcs (0), mcs (1) and … Mcs (n) for generating a tail current to generate a pixel output voltage signal PIX _ OUT with certain driving capability, and a reference current IREF generated by a reference source generates a pixel tail current tube bias voltage VB through a bias source. The pixel output voltage signal PIX _ OUT is output to the ADC. The ADC quantizes the pixel outputs based on the reference signal, and outputs the quantized digital values to the system for data processing, so that the pixel outputs PIX _ OUT (0), PIX _ OUT (1), and … PIX _ OUT (n) are voltage signals.
FIG. 2 is a CIS standard four-tube pixel unit circuit structure, which is generally applied to a line exposure CIS, and comprises a photosensitive diode PD, a charge transfer tube Mtg, a reset tube Mrst, an amplifying tube Msf and a gate tube Msel. The photodiode PD senses light and generates photoelectrons proportional to the intensity of light. The charge transfer tube Mtg is used for transferring photoelectrons in the photodiode PD, and when the transmission signal TX is at a high voltage, the charge transfer tube Mtg is turned on, and the photoelectrons in the photodiode PD are transferred to the floating diffusion region FD. The reset transistor Mrst is used to reset the floating diffusion FD when the reset signal RX is high. When the strobe signal SEL is a high-potential gate tube Msel, the amplifier tube Msf, the gate tube Msel and a current source Mcs to the ground form a channel, and at the moment, the amplifier tube Msf is essentially a source follower, follows the potential change of the floating diffusion region FD, is finally output by a pixel output voltage signal PIX _ OUT, and is input to the column ADC for analog-to-digital conversion.
Fig. 3 shows the operation sequence of the four-tube pixel unit, which is divided into reset (Rst), exposure (Exp), and signal reading (Read). In the reset phase, the transmission signal TX and the reset signal RX are at high level, the charge transfer tube Mtg and the reset tube Mrst are both turned on, the floating diffusion FD is reset, and the potential thereof is pulled up to the power supply voltage VDD. Then, the reset signal RX and the transmission signal TX are at low levels, and the floating diffusion PD senses light and accumulates electrons in the exposure phase. And entering a signal reading stage, wherein the strobe signal SEL is at a high level, the reset signal RX is at the high level to reset the floating diffusion region FD, the reset signal RX is pulled to a low level, the transmission signal TX is kept at the low level, and the amplifying tube Msf is controlled by the potential of the floating diffusion region FD and outputs a reset potential VRST through a pixel output voltage signal PIX _ OUT. Then, the level of the transmission signal TX is pulled high to transfer electrons on the photodiode PD to the floating diffusion FD, and the amplification tube Msf is controlled by the floating diffusion FD and outputs the photosensitive signal potential VSIG through the pixel output voltage signal PIX _ OUT. The reset potential VRST and the photosensitive signal potential VSIG are converted into digital quantity by an ADC circuit and subjected to subtraction operation to obtain light on the photosensitive diode PDThe actual corresponding digital quantity of the electron. If the ADC is 12 bits and the ADC reference voltage range is VREF, the final output is DOUT = (VRST-VSIG). Times.2 12 /VREF。
FIG. 4 is a conventional pixel tail current bias circuit with a bias current ISC generating a bias voltage VB via Mcsm for driving the column pixel's tail current source tubes (Mcs (0), mcs (1), … Mcs (n)). Under the bias of the tail current tube of each column, the pixel outputs signals PIX _ OUT (0), PIX _ OUT (1) and … PIX _ OUT (n). When the CIS resolution is higher, the number of rows and columns is increased, so that the VB bias line path is very long, the VB wires between each column have parasitic resistance and parasitic capacitance to the ground (the parasitic resistance and capacitance of the first column to the last column are R0/C0, R1/C1 and … Rn/Cn respectively), and the time constant for establishing the bias signals of the last column is maximum:
τn＝R0×C0+(R1+R2)×C1+…+(R1+R2+…+Rn)×Cn
since the spacing between each column is the same, it can be approximately considered that R0= R1= … = Rn = R, C0= C1= … = Cn = C. The time constant can be written as:
when the resolution of the CIS is large, for example 4000 ten thousand, the number of columns will reach 8000 ten thousand, if the wiring resistance R =1 Ω for each column VBN, the capacitance C =10fF, and the time constant τ n will reach 640ns, that is, when the driving capability of the bias source is infinite, the bias signal establishment can be completed in 640ns, but in an actual situation, the establishment process of the bias source also exists, so the actual establishment time will reach approximately 1 μ s. Under the condition that the resolution frame rates are all high, the requirement cannot be met, for example, 4000 ten thousand pixels are imaged at the speed of 30 frames per second, one line reading period is 6 μ s, if the frame rate reaches 60 frames, the period is only 3 μ s, the offset signal is interfered by other signals during frame switching, the offset signal needs to be stabilized quickly, and the recovery time of 640 ns-1 μ s is certainly not satisfactory. It can be seen that, in the conventional method, a single-side bias source provides bias to each column tail current tube, when a pixel array is large, the number of columns is large, and the time constant of a tail current bias signal line is large, so that the driving capability of the bias source needs to be increased, and the current is increased to cause large power consumption.
To this end, the present invention proposes to provide a second bias source with the same specification on the other side of the pixel array to provide bias for the pixel tail current tube, as shown in fig. 5, the image sensor provided by the present invention includes: the pixel array, the tail current source module, the reference source, the first bias source, the second bias source, the pixel array, the analog-to-digital conversion unit, the output signal processing system, the decoding driver, the time schedule controller and the like.
The pixel array comprises n groups of pixel units, wherein n is a positive integer, and the pixel units are used for generating image signals; the tail current source module comprises n tail current source tubes, such as Mcs (0), mcs (1), … Mcs (n) shown in fig. 5, and each tail current source corresponds to each group of the pixel array one by one; the tail current source is used for generating a tail current. Assuming that the pixel distribution of the pixel array in this embodiment is also divided into two directions, the first direction is defined as a row direction, and the second direction is defined as a column direction, then the n groups of pixel units can be understood as n columns of pixel units.
A reference source for generating a reference signal VREF and generating a first reference current IREF1 and a second reference current IREF2.
A first bias source for converting the first reference current IREF1 into a first bias voltage VB1 and outputting the first bias voltage VB1 to an analog-to-digital conversion unit, the first bias source being for driving a tail current source of each group configuration of the pixel array.
And the second bias source is used for converting the second reference current IREF2 into a second bias voltage VB2 and outputting the second bias voltage VB2 to the analog-to-digital conversion unit for commonly driving the tail current sources of each group of pixel array configurations. Wherein the first bias source and the second bias source are bias sources of the same specification, and the first reference current IREF1 and the second reference current IREF2 are the same.
The pixel array is used for outputting pixel unit output signals of each group under the action of bias signals of the tail current source tubes corresponding to each group of the pixel array.
And the analog-digital conversion unit comprises n groups of analog-digital converters and is used for quantizing the output signals of the pixel units of each group based on the reference signal VREF, and outputting the quantized digital quantity to the output signal processing system for subsequent data processing.
Referring to fig. 6, the bias voltage VB traces between each group of pixel cells have parasitic resistance and parasitic capacitance to ground, and as the first group to the last group of trace parasitic resistance capacitances are R0/C0, R1/C1, … Rn/Cn, respectively, since the spacing between each group is the same, it is assumed that R0= R1= … = Rn = R, and C0= C1= … = Cn = C. The time constant can be written as:
therefore, the image sensor has the obvious advantage that due to the fact that the tail current source modules are driven on the two sides, according to a classic Elmore model, the equivalent resistance is reduced to 1/4 of the equivalent resistance in a normal state. If the CIS resolution is very large according to the above parameters, for example, 4000 ten thousand, the number of groups will reach 8000 ten thousand, if each group of VBN routing resistors R =1 Ω, the capacitor C =10fF, and it is known that the time constant τ n' =160ns, and the time constant of the bias signal line is reduced to 1/4 of the original time, which greatly shortens the setup time and the stable recovery time of interference resistance.
As shown in fig. 7, the present invention further provides a readout method of an image sensor, which can be applied to the image sensor, and specifically includes the following steps:
s701, in the reset stage, the gating signal SEL is controlled to be at a low level, the reset signal RX and the transmission signal TX are both set to be at a high level, so that the transmission tube Mtg, the reset tube Mrst and the amplifying tube Msf are all conducted, and the pixel unit is reset.
S702, after the pixel unit is reset, control the transmission signal TX to switch from high level to low level, so that the transmission pipe Mtg is turned off.
S703, in the exposure stage, keeping the gating signal SEL at a low level, keeping the transmission signal TX at a low level, and controlling the reset signal RX to switch from a high level to a low level, so that the reset tube Mrst and the transmission tube Mtg are disconnected, the gate tube Msel is conducted, and the photodiode PD starts to expose and accumulate electrons.
And S704, before the signal reading stage, setting the control signal of the switch to be at a high level, and driving tail current sources configured in each group of the pixel array by the first bias source and the second bias source together.
S705, in a signal reading stage, a control signal of a switch is switched from a high level to a low level, a first bias source drives tail current sources configured in each group of the pixel array, the connection between a second bias source and the tail current sources is disconnected, a reset signal RX is controlled to be switched from the low level to the high level, so that a reset tube Mrst is switched on, a floating diffusion region FD point is reset, and a reset potential VRST is read out; and then controlling the transmission signal TX to be switched from a low level to a high level, so that the transmission pipe Mtg is conducted, and reading out an exposure integration signal VSIG.
Referring to fig. 6, the newly added second bias source Mcsm2 and the first bias source Mcsm1 are of the same specification, and the bias current ISC1= ISC2 flows, so that the bias signal VB1 and the bias signal VB2 are ensured to be the same. The control signal SKS of the switch Sk is turned on when being at a high level and turned off when being at a low level, as shown in fig. 8, the control signal SKS of the switch Sk is set at a high level before reading, and the first bias source and the second bias source drive the tail current tube of the group together to realize quick establishment, wherein the ts duration only needs about 200 ns. After the read stage, the switch Sk is switched off, the second bias source is switched off from the current source tube array, and the first bias source continuously provides bias voltage for the tail current tube array. The bias control mode can meet the requirements of high resolution and high frame rate, and the power consumption of the bias source is controlled within a reasonable range.
The reading method of the image sensor provided by the invention has the beneficial effects that: the method comprises the steps that a first bias source and a second bias source drive tail current tubes of all groups together to achieve quick establishment, the proposed bias control mode can meet the requirement of high resolution and high frame rate, the power consumption of the bias sources is controlled within a reasonable range, the newly added bias sources are connected before a pixel reading stage begins because the newly added bias sources possibly have differences with the original bias sources, the newly added second bias sources are disconnected after the pixel reading stage is started, and the original first bias sources continue to provide stable bias signals.
The above description is only for the preferred embodiment of the present invention, and the embodiment is not intended to limit the scope of the present invention, so that all the equivalent structural changes made by using the contents of the description and the drawings of the present invention should be included in the scope of the present invention.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (3)
1. An image sensor, comprising:
a pixel array including n groups of pixel units for generating an image signal;
the tail current source module comprises n tail current source tubes, and each tail current source corresponds to each group of the pixel array one by one; the tail current source is used for generating tail current;
a reference source for generating a reference signal and generating a first reference current and a second reference current;
a first bias source for converting the first reference current into a first bias voltage and outputting the first bias voltage to an analog-to-digital conversion unit, the first bias source being configured to drive tail current sources configured for each group of the pixel array;
the second bias source is used for converting the second reference current into a second bias voltage and outputting the second bias voltage to the analog-to-digital conversion unit, and the second bias voltage is used for commonly driving tail current sources configured in each group of the pixel array;
the pixel array is used for outputting pixel unit output signals of each group under the action of bias signals of tail current source tubes corresponding to each group of the pixel array;
the analog-to-digital conversion unit is used for quantizing the output signals of the pixel units of each group based on the reference signals, and outputting the quantized digital values to the output signal processing system for subsequent data processing;
wherein n is a positive integer, the first bias source and the second bias source are bias sources of the same specification, and the first reference current and the second reference current are the same.
2. The image sensor of claim 1, wherein the bias signal setup time constant for the last group of pixel cells is at most:
wherein, R is the parasitic resistance between the adjacent groups of pixel units, and C is the parasitic capacitance between the adjacent groups of pixel units.
3. A readout method of an image sensor, which is applied to the image sensor according to claim 1 or 2, comprising:
in the reset stage, the gating signal SEL is controlled to be at a low level, and the reset signal RX and the transmission signal TX are both at a high level, so that the transmission tube Mtg, the reset tube Mrst and the amplification tube Msf are all conducted, and the pixel unit is reset;
after the pixel unit is reset, controlling the transmission signal TX to be switched from a high level to a low level, so that the transmission tube Mtg is disconnected;
in the exposure stage, keeping the gating signal SEL at a low level, keeping the transmission signal TX at a low level, controlling the reset signal RX to switch from the high level to the low level, so that the reset tube Mrst and the transmission tube Mtg are disconnected, the gating tube Msel is conducted, and the photodiode PD starts to expose and accumulate electrons;
before a signal reading stage, setting a control signal of a switch to be high level, and driving tail current sources configured in each group of the pixel array by a first bias source and a second bias source together;
in a signal reading stage, a control signal of a switch is switched from a high level to a low level, a first bias source drives tail current sources configured for each group of the pixel array, the second bias source is disconnected from the tail current sources, and a reset signal RX is controlled to be switched from the low level to the high level, so that a reset tube Mrst is conducted, an FD point of a floating diffusion region is reset, and a reset potential VRST is read out; and then, the transmission signal TX is controlled to be switched from a low level to a high level, so that the transmission pipe Mtg is conducted, and the exposure integral signal VSIG is read out.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116887063A (en) * | 2023-09-08 | 2023-10-13 | 深圳大学 | Trusted image sensing chip based on nonlinear strong physical unclonable function circuit |
| CN117793563A (en) * | 2024-02-23 | 2024-03-29 | 天津希格玛微电子技术有限公司 | Readout device for image sensor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101299797A (en) * | 2007-05-02 | 2008-11-05 | 佳能株式会社 | Solid-state image sensing device and image sensing system |
| CN103685992A (en) * | 2013-12-31 | 2014-03-26 | 上海集成电路研发中心有限公司 | Method for generating high dynamic range image and image sensor |
| CN104333720A (en) * | 2014-11-12 | 2015-02-04 | 上海集成电路研发中心有限公司 | High-frame-rate global pixel CMOS (Complementary Metal Oxide Semiconductor) image sensor and signal transmission method thereof |
| US20180109748A1 (en) * | 2012-07-20 | 2018-04-19 | Sony Corporation | Solid-state imaging device and electronic apparatus |
| CN112753216A (en) * | 2018-09-26 | 2021-05-04 | 索尼半导体解决方案公司 | Imaging element and photodetector |
| CN114285983A (en) * | 2022-01-27 | 2022-04-05 | 四川创安微电子有限公司 | Circuit and method for shortening pixel output stabilization time |
-
2022
- 2022-10-09 CN CN202211228193.7A patent/CN115550579B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101299797A (en) * | 2007-05-02 | 2008-11-05 | 佳能株式会社 | Solid-state image sensing device and image sensing system |
| US20180109748A1 (en) * | 2012-07-20 | 2018-04-19 | Sony Corporation | Solid-state imaging device and electronic apparatus |
| CN103685992A (en) * | 2013-12-31 | 2014-03-26 | 上海集成电路研发中心有限公司 | Method for generating high dynamic range image and image sensor |
| CN104333720A (en) * | 2014-11-12 | 2015-02-04 | 上海集成电路研发中心有限公司 | High-frame-rate global pixel CMOS (Complementary Metal Oxide Semiconductor) image sensor and signal transmission method thereof |
| CN112753216A (en) * | 2018-09-26 | 2021-05-04 | 索尼半导体解决方案公司 | Imaging element and photodetector |
| CN114285983A (en) * | 2022-01-27 | 2022-04-05 | 四川创安微电子有限公司 | Circuit and method for shortening pixel output stabilization time |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116887063A (en) * | 2023-09-08 | 2023-10-13 | 深圳大学 | Trusted image sensing chip based on nonlinear strong physical unclonable function circuit |
| CN116887063B (en) * | 2023-09-08 | 2024-01-09 | 深圳大学 | Trusted image sensing chip based on nonlinear strong physical unclonable function circuit |
| CN117793563A (en) * | 2024-02-23 | 2024-03-29 | 天津希格玛微电子技术有限公司 | Readout device for image sensor |
| CN117793563B (en) * | 2024-02-23 | 2024-05-28 | 天津希格玛微电子技术有限公司 | Readout device for image sensor |
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