CN115548155A - 太阳能电池及光伏组件 - Google Patents
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Abstract
本发明实施例提供一种太阳能电池及光伏组件,太阳能电池包括第一区域和第二区域,且包括:基底和隧穿层,所述基底具有第一表面和第二表面,所述隧穿层覆盖所述第二表面;第一发射极,所述第一发射极位于所述第一区域的所述隧穿层上;第二发射极,所述第二发射极位于所述第二区域的所述隧穿层上且位于所述第一发射极上,所述第二发射极的导电类型与所述第一发射极的导电类型不同;第一电极,位于所述第一区域,贯穿所述第二发射极并与所述第一发射极电连接;第二电极,位于所述第二区域并与所述第二发射极电连接。本发明实施例有利于提高太阳能电池的电学性能和降低太阳能电池的制作成本。
Description
技术领域
本发明实施例涉及光伏领域,特别涉及太阳能电池及光伏组件。
背景技术
太阳能电池是人们所熟知的用于将太阳辐射转换为电能的装置。太阳能电池具有在正常工作期间面向太阳以收集太阳辐射的光接收表面,以及与光接收表面相对的背表面。在全背接触式太阳能电池中,所有电极和对应的发射极均形成在太阳能电池的背表面上。外部电路(如负载)可连接到太阳能电池的电极以进行供电。
为提升太阳能电池的商业价值,需要提高太阳能电池的电学性能和降低太阳能电池的制备成本。
发明内容
本发明实施例提供一种太阳能电池及光伏组件,有利于提高太阳能电池的电学性能和降低太阳能电池的制备成本。
为解决上述问题,本发明实施例提供一种太阳能电池,包括第一区域和第二区域,且包括:基底和隧穿层,所述基底具有第一表面和第二表面,所述隧穿层覆盖所述第二表面;第一发射极,所述第一发射极位于所述第一区域的所述隧穿层上;第二发射极,所述第二发射极位于所述第二区域的所述隧穿层上且位于所述第一发射极上,所述第二发射极的导电类型与所述第一发射极的导电类型不同;第一电极,位于所述第一区域,贯穿所述第二发射极并与所述第一发射极电连接;第二电极,位于所述第二区域并与所述第二发射极电连接。
另外,所述第一发射极的侧壁表面与所述第二发射极的侧壁表面相接触。
另外,在垂直于所述第二表面的方向上,所述第二发射极的厚度为30nm~200nm。
另外,所述第二区域的基底相对于所述第一区域的基底凸起,所述第一发射极具有背离所述隧穿层的第三表面,所述第二发射极具有与所述隧穿层接触的第四表面,所述第三表面平齐于或低于所述第四表面。
另外,所述隧穿层包括第一介质层和第二介质层,所述第一介质层位于所述第一发射极和所述基底之间,所述第二介质层覆盖所述第二区域的所述基底表面并覆盖所述第一发射极的第三表面和侧壁,所述第三表面为所述第一发射极背离所述第一介质层的表面,所述第二发射极位于所述第二介质层上,所述第一电极还贯穿所述第二介质层。
另外,所述第二介质层的材料与所述第一介质层的材料不同。
另外,所述第一介质层的材料包括氧硅化物、氮硅化物或碳硅化物中的至少一者。
另外,所述第二发射极包括第一掺杂部和第二掺杂部,至少部分所述第二掺杂部位于所述第一掺杂部和所述第一电极之间,所述第一掺杂部的掺杂浓度大于等于所述第二掺杂部的掺杂浓度,在所述第一掺杂部朝向所述第一电极的方向上,所述第二掺杂部不同区域的掺杂浓度递减。
另外,所述第二掺杂部的浓度梯度为5E16cm-3/cm~2E22cm-3/cm。
另外,在所述第一掺杂部朝向所述第一电极的方向上,所述第二掺杂部的宽度大于20μm。
另外,所述第一发射极的导电类型为P型,所述第二发射极的导电类型为N型。
相应地,本发明实施例还提供一种光伏组件,包括:池串,由上述任一项的太阳能电池连接而成;封装胶膜,用于覆盖所述电池串的表面;盖板,用于覆盖所述封装胶膜背离所述电池串的表面。
与现有技术相比,本发明实施例提供的技术方案具有以下优点:
上述技术方案中,第二发射极基于第一发射极设置,在形成第一发射极和第二发射极的过程中,仅需要进行一道图案化工艺以形成第一发射极,而第二发射极在进行无掩膜沉积工艺之后,无须进行图案化刻蚀以调整位置精度,如此,仅需要控制第一发射极的位置精度即可,有利于降低太阳能电池制备过程中的对准精度要求,同时,仅需要一块掩膜和一次干法刻蚀工艺即可,有利于降低太阳能电池的制备成本。
另外,设置第一介质层和第二介质层,有利于在不增加图案化刻蚀工艺的情况下,实现第一发射极和第二发射极的隔离,抑制第一发射极和第二发射极相接触可能出现的短路问题以及掺杂离子相互渗透问题,保证太阳能电池具有较高的光电转换效率。
附图说明
一个或多个实施例通过与之对应的附图中的图片进行示例性说明,这些示例性说明并不构成对实施例的限定,附图中具有相同参考数字标号的元件表示为类似的元件,除非有特别申明,附图中的图不构成比例限制。
图1和图2为本发明实施例提供的一种太阳能电池的结构示意图;
图3为本发明实施例提供的另一种太阳能电池的结构示意图;
图4为本发明实施例提供的又一种太阳能电池的结构示意图;
图5为本发明实施例提供的再一种太阳能电池的结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合附图对本发明的各实施例进行详细的阐述。然而,本领域的普通技术人员可以理解,在本发明各实施例中,为了使读者更好地理解本申请而提出了许多技术细节。但是,即使没有这些技术细节和基于以下各实施例的种种变化和修改,也可以实现本申请所要求保护的技术方案。
参考图1和图2,图2为图1所示结构的立体示意图,太阳能电池包括第一区域101和第二区域102,且包括:基底10和隧穿层11,基底10具有第一表面10a和第二表面10b,隧穿层11覆盖第二表面10b;第一发射极12,第一发射极12位于第一区域101的隧穿层11上;第二发射极13,第二发射极13位于第二区域102的隧穿层11上且位于第一发射极12上,第二发射极13的导电类型与第一发射极12的导电类型不同;第一电极15,位于第一区域101,贯穿第二发射极13并与第一发射极12电连接;第二电极16,位于第二区域102并与第二发射极13电连接。
在一些实施例中,基底10为硅基底材料,例如单晶硅、多晶硅、非晶硅或微晶硅中的一种或多种;在其他实施例中,基底的材料还可以为碳单质、有机材料或多元化合物,多元化合物可以包括但不限于钙钛矿、砷化镓、碲化镉、铜铟硒等材料。
在一些实施例中,第一表面10a为光接收表面,第二表面10b为与光接收表面相对的背表面,第一表面10a可以设置为金字塔绒面,以降低第一表面10a对光线的反射,增加对光线的吸收利用率,提升太阳能电池的转换效率;太阳能电池还可以包括第一钝化层14,第一钝化层14覆盖第一发射极12和第二发射极13背离基底10的表面,第一钝化层14的材料包括氮化硅、氮氧化硅、碳氮氧化硅、氧化钛、氧化铪、氧化铝等材料的一种或多种;相应地,太阳能电池还可以包括第二钝化层17,第二钝化层17覆盖第二表面10b,第二钝化层17的材料包括氮化硅或氧化硅等。
在一些实施例中,基底10包括N型掺杂元素(如磷、砷等),第一发射极12包含P型掺杂元素,第二发射极13包含N型掺杂元素,第一发射极12与基底10形成PN结,与第一发射极12连接的第一电极15作为太阳能电池的正极,与第二发射极13连接的第二电极16作为太阳能电池的负极;在其他实施例中,第一发射极12包含N型掺杂元素,第二发射极13包含P型掺杂元素,第二发射极13与基底10形成PN结。
需要说明的是,虽然图1所示结构中第一发射极12和第二发射极13直接接触,但这并不意味着太阳能电池的正负极短路,这是因为第一发射极12和第二发射极13包含不同类型的掺杂离子,同一载流子在第一发射极12和第二发射极13内的传输效率差距极大,即在传输路径长度相同的情况下,同一载流子在不同发射极内的传输路径电阻差异极大,这使得第一发射极12内的载流子总是倾向于通过第一电极15流出;同时,由于在垂直于第二表面10b的方向上,第二发射极13的厚度一般较薄,横截面积较小,第二发射极13内的载流子进行横向传输所需要抵抗的电阻远大于直接汇聚于第二电极16内所需要抵抗的电阻,因此,穿过隧穿层11而流向第二发射极13的载流子总是倾向于朝第二电极16汇聚。也就是说,即便具有不同导电类型的第一发射极12和第二发射极13相互接触,但是由于传输路径电阻的限制,太阳能电池具有明显分立的正极和负极,太阳能电池不会发生明显的正负极短路问题,这一结构克服了现有技术的偏见。
在一些实施例中,第一发射极12的侧壁表面与第二发射极13的侧壁表面相接触;进一步地,在垂直于第二表面10b的方向上,第二发射极13的厚度为30nm~200nm,例如40nm、70nm、90nm、120nm、150nm或160nm等。若第二发射极13的厚度小于上述阈值,则第二区域102的第二发射极13的场钝化效果较弱,第二区域102的载流子复合问题较为严重;若第二发射极13的厚度大于上述阈值,则使得第二发射极13内的载流子进行横向传输的电阻较小,第二区域102的第二发射极13内的载流子更容易进行横向传输而移动至第一电极15内,不利于抑制第一发射极12和第二发射极13之间的短路问题。
进一步,可通过设置第一电极15远离第二区域102,增加第二区域102的第二发射极13的载流子传输至第一电极15的路径电阻,抑制第一电极15和第二电极16之间的短路电流;同理地,可通过设置第二电极16延伸进第二发射极13内,减小第二区域102的载流子传输至第二电极16的路径电阻,促进载流子朝汇聚于第二电极16。
在一些实施例中,基底10具有平整的第二表面10b,第一发射极12朝向基底10的表面与第二区域102的第二发射极13朝向基底10的表面平齐,第二发射极13覆盖第一发射极12的侧壁表面。形成上述结构的具体工艺包括:提供具有平整第二表面10b的基底10以及具有均匀膜厚的隧穿层11;依次进行无掩膜沉积工艺和图案化刻蚀工艺,以形成图案化的第一发射极12;进行第二道无掩膜沉积工艺,形成第二发射极13。也就是说,上述结构的形成工艺仅需要一道图案化刻蚀工艺即可,相较于传统的通过两道图案化刻蚀工艺分别限定第一发射极12和第二发射极13的位置,有利于降低精度对准要求和所需掩膜的数量,从而提高太阳能电池的电学性能和降低太阳能电池的制备成本。
此外,相对于纹理表面而言,设置平整的第二表面10b还有利于避免从第一表面10a入射的太阳光从第二表面10b透射出去,从而减少太阳能电池的光透射损失,提升太阳能电池的光吸收效率。
在一些实施例中,参考图3,第二区域202的基底20相对于第一区域201的基底20凸起,第一发射极22具有背离隧穿层21的第三表面(未标示),第二发射极23具有与隧穿层21接触的第四表面(未标示),第三表面平齐于或低于第四表面。形成上述结构的具体工艺包括:对基底20进行图案化刻蚀,形成相对凹凸的第二表面20b;在第二表面20b覆盖具有均匀膜厚的隧穿层21;依次进行沉积工艺和平坦化工艺,形成位于第一区域201的第一发射极22,第一发射极22的第三表面低于或平齐于隧穿层21的第四表面;进行无掩膜沉积工艺,形成第二发射极23。也就是说,上述结构同样仅需要一道图案化刻蚀工艺即可形成,且该结构中的第二发射极23具有背离基底20的平坦表面,有利于降低后续涂刷导电浆料的复杂度,保证第一电极15(参考图2)和第二电极16(参考图2)具有良好的对准精度。
其中,当第三表面低于第四表面时,在垂直于第二表面20b的方向,第三表面和第四表面的垂直间距可设置为0.1μm~5μm,例如1μm、2μm或3μm。
在一些实施例中,参考图4,隧穿层31包括第一介质层311和第二介质层312,第一介质层311位于第一发射极32和基底30之间,即第一介质层311仅处于第一区域301,第二介质层312覆盖第二区域302的第二表面30b并覆盖第一发射极32的第三表面和侧壁,第三表面为第一发射极32背离第一介质层311的表面,第二发射极33位于第二介质层312上,第一电极35依次贯穿第一钝化层34、第二发射极33以及第二介质层312并与第一发射极32电接触。
同理地,上述结构也仅需要一道图案化刻蚀工艺即可形成,该道图案化刻蚀工艺用于依次刻蚀层叠的第一发射膜和第一介质膜,以形成第一发射极32和第一介质层311;除此之外,第二介质层312和第二发射极33都可采用无掩膜沉积工艺形成。上述结构的设计可在不增加图案化刻蚀工艺的情况下,设置隔离第一发射极32和第二发射极33的第二介质层312,抑制第一发射极32和第二发射极33之间可能出现的载流子复合和掺杂离子相互渗透,保证太阳能电池具有较大的光电转换效率。
在一些实施例中,第二介质层312的材料与第一介质层311的材料不同,举例来说,第二介质层312的材料的介电常数小于第一介质层311的材料的介电常数,以使得第一介质层311具有较好的隧穿作用,第二介质层312具有较好的隔离效果;在其他实施例中,第一介质层311和第二介质层312的膜厚不同,举例来说,在第二介质层312的材料的介电常数小于第一介质层311的材料的介电常数,第二介质层312的材料的隧穿效果弱于第一介质层311的材料的隧穿效果的情况下,可设置第二介质层312的膜厚小于第一介质层311的膜厚,以使得第二介质层312在满足隔离性要求的情况下具有良好的隧穿效果。
第二介质层312的材料与第一介质层311的材料不同至少包含两种情况:第一,第一介质层311和第二介质层312分别由不同的单一材料组成;第二,第一介质层311由单一材料组成,第二介质层312包含多个子膜层,不同子膜层的材料不同。举例来说,第二介质层312包含第一子膜层(未图示)和第二子膜层(未图示),第一子膜层覆盖第二表面30b和第一发射极32表面,第二子膜层覆盖第一子膜层表面,如此,可通过调整第一子膜层的材料使得第一子膜层具有良好的钝化效果,减少基底30第二表面30b的表面缺陷和载流子复合,以及通过调整第二子膜层的材料使得第一发射极32和第二发射极33之间具有良好的电隔离效果。
其中,第一介质层311的材料包括氧硅化物、氮硅化物或碳硅化物中的至少一者。
在一些实施例中,参考图5,第二发射极43包括第一掺杂部431和第二掺杂部432,至少部分第二掺杂部432位于第一掺杂部431和第一电极45之间,第一掺杂部431的掺杂浓度大于等于第二掺杂部432的掺杂浓度,在第一掺杂部431朝向第一电极45的方向上,第二掺杂部432不同区域的掺杂浓度递减。相较于在第二发射极43和第一电极45之间设置本征多晶硅进行隔离,设置具有浓度梯度的第二掺杂部432,有利于减小不同界面之间的浓度差,减弱第二发射极43中的掺杂离子的扩散动力,避免本征多晶硅因扩散动力较强而被均匀掺杂,保证第一电极45与第二掺杂部432的接触面具有较大的接触电阻,从而抑制第一电极45与第二发射极43之间的短路电流。
若第二掺杂部432朝向第一掺杂部431的表层的掺杂浓度可视为等于第一掺杂部431的掺杂浓度,则可以理解的是,第二掺杂部432的浓度梯度越小,第一掺杂部431中掺杂离子的因浓度差而形成扩散动力越小,第二掺杂部432的阻隔效果越好。在第二掺杂部432不同区域的掺杂浓度极差不变的情况下,第二掺杂部432的浓度梯度越小,在第一掺杂部431朝向第一电极45的方向上,第二掺杂部432的宽度越宽,;或者说,在第二掺杂部432的宽度不变以及第二掺杂部432的最小掺杂浓度不变的情况下,第二掺杂部432的浓度梯度越小,第一掺杂部431的掺杂浓度越低,第一掺杂部431的导电性能越弱。
在一些实施例中,第二掺杂部432的浓度梯度为5E16cm-3/cm~2E22cm-3/cm,例如1E21cm-3/cm、1E20cm-3/cm、1E19cm-3/cm、1E18cm-3/cm或1E17cm-3/cm。若浓度梯度小于上述阈值,则可能导致第二掺杂部432的宽度较宽而覆盖第二区域的第二表面,或者导致第一掺杂部431的掺杂浓度较低,不利于基底内的载流子通过第二发射极43汇聚于第二电极46内;若浓度梯度大于上述阈值,则不利于阻隔第一掺杂部431内的掺杂离子扩散至第一电极45。
在一些实施例中,在第一掺杂部431朝向第一电极45的方向上,第二掺杂部432的宽度大于20μm。在第二掺杂部432的浓度梯度和第一掺杂部431的掺杂浓度不变的情况下,若宽度小于该值,则可能导致第二掺杂部432与第一电极45的接触面的掺杂浓度较高,第二掺杂部432的电隔离效果较弱;在第二掺杂部432的浓度梯度和最小掺杂浓度不变的情况下,若宽度小于该值,则可能导致第一掺杂部431的掺杂浓度较小,第二发射极43的载流子传输能力较弱。
需要说明的是,在一些实施例中,与隧穿层41接触的第二发射极43仅位于第一发射极42的相对一侧,即第二区域402仅位于第一区域401的相对一侧,此时,第二掺杂部432仅设置于第一电极45的相对一侧,用于阻隔穿过隧穿层41而进入到第二发射极43的载流子;在其他实施例中,第二区域402和第一区域401交叉排列,第二区域402位于部分第一区域401的相对两侧,与隧穿层41接触的第二发射极43位于第一发射极42的相对两侧,此时,第二掺杂部432设置于第一电极45的相对两侧。
本实施例中,第二发射极基于第一发射极设置,在形成第一发射极和第二发射极的过程中,仅需要进行一道图案化工艺以形成第一发射极,而第二发射极在进行无掩膜沉积工艺之后,无须进行图案化刻蚀以调整位置精度,如此,仅需要控制第一发射极的位置精度即可,有利于降低太阳能电池制备过程中的对准精度要求;同时,仅需要一块掩膜和一次干法刻蚀工艺即可,有利于降低太阳能电池的制备成本。
本发明实施例还提供一种太阳能电池,与图1所示太阳能结构的区别在于,位于第二区域的第二发射极与位于第一区域的第二发射极之间电隔离,第一发射极与位于第二区域的第二发射极之间具有空隙,第一区域和第二区域的第二发射极可采用同一工艺步骤形成。
本发明实施例还提供一种光伏组件,所述光伏组件用于将接收的光能转化为电能。所述光伏组件包括电池串,封装胶膜以及盖板;所述电池串由多个太阳能电池连接形成,所述太阳能电池可以为前述的任一太阳能电池(包括但不限于如图1-图5所述的太阳能电池);所述封装胶膜可以为EVA或POE等有机封装胶膜,所述封装胶膜覆盖在所述电池串的表面以密封;所述盖板可以为玻璃盖板或塑料盖板等,所述盖板覆盖在所述封装胶膜背离所述电池串的表面。在一些实施例中,所述盖板上设置有陷光结构以增加入射光的利用率。所述光伏组件具有较高的电流收集能力和较低的载流子复合率,可实现较高的光电转换效率。
本领域的普通技术人员可以理解,上述各实施方式是实现本发明的具体实施例,而在实际应用中,可以在形式上和细节上对其作各种改变,而不偏离本发明的精神和范围。任何本领域技术人员,在不脱离本发明的精神和范围内,均可作各自更动与修改,因此本发明的保护范围应当以权利要求限定的范围为准。
Claims (12)
1.一种太阳能电池,包括第一区域和第二区域,其特征在于,包括:
基底和隧穿层,所述基底具有第一表面和第二表面,所述隧穿层覆盖所述第二表面;
第一发射极,所述第一发射极位于所述第一区域的所述隧穿层上;
第二发射极,所述第二发射极位于所述第二区域的所述隧穿层上且位于所述第一发射极上,所述第二发射极的导电类型与所述第一发射极的导电类型不同;
第一电极,位于所述第一区域,贯穿所述第二发射极并与所述第一发射极电连接;
第二电极,位于所述第二区域并与所述第二发射极电连接。
2.根据权利要求1所述的太阳能电池,其特征在于,所述第一发射极的侧壁表面与所述第二发射极的侧壁表面相接触。
3.根据权利要求2所述的太阳能电池,其特征在于,在垂直于所述第二表面的方向上,所述第二发射极的厚度为30nm~200nm。
4.根据权利要求1所述的太阳能电池,其特征在于,所述第二区域的基底相对于所述第一区域的基底凸起,所述第一发射极具有背离所述隧穿层的第三表面,所述第二发射极具有与所述隧穿层接触的第四表面,所述第三表面平齐于或低于所述第四表面。
5.根据权利要求1所述的太阳能电池,其特征在于,所述隧穿层包括第一介质层和第二介质层,所述第一介质层位于所述第一发射极和所述基底之间,所述第二介质层覆盖所述第二区域的所述基底表面并覆盖所述第一发射极的第三表面和侧壁,所述第三表面为所述第一发射极背离所述第一介质层的表面,所述第二发射极位于所述第二介质层上,所述第一电极还贯穿所述第二介质层。
6.根据权利要求5所述的太阳能电池,其特征在于,所述第二介质层的材料与所述第一介质层的材料不同。
7.根据权利要求5所述的太阳能电池,其特征在于,所述第一介质层的材料包括氧硅化物、氮硅化物或碳硅化物中的至少一者。
8.根据权利要求1所述的太阳能电池,其特征在于,所述第二发射极包括第一掺杂部和第二掺杂部,至少部分所述第二掺杂部位于所述第一掺杂部和所述第一电极之间,所述第一掺杂部的掺杂浓度大于等于所述第二掺杂部的掺杂浓度,在所述第一掺杂部朝向所述第一电极的方向上,所述第二掺杂部不同区域的掺杂浓度递减。
9.根据权利要求8所述的太阳能电池,其特征在于,所述第二掺杂部的浓度梯度为5E16cm-3/cm~2E22cm-3/cm。
10.根据权利要求8所述的太阳能电池,其特征在于,在所述第一掺杂部朝向所述第一电极的方向上,所述第二掺杂部的宽度大于20μm。
11.根据权利要求1所述的太阳能电池,其特征在于,所述第一发射极的导电类型为P型,所述第二发射极的导电类型为N型。
12.一种光伏组件,其特征在于,包括:
电池串,由多个权利要求1至11中任一项所述的太阳能电池连接而成;
封装胶膜,用于覆盖所述电池串的表面;
盖板,用于覆盖所述封装胶膜背离所述电池串的表面。
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