CN115542681A - Method, device and system for processing alignment deviation of photoetching machine - Google Patents
Method, device and system for processing alignment deviation of photoetching machine Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000001259 photo etching Methods 0.000 title abstract description 10
- 238000005259 measurement Methods 0.000 claims abstract description 143
- 238000012360 testing method Methods 0.000 claims description 31
- 238000001459 lithography Methods 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 238000003672 processing method Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 2
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- 230000003111 delayed effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 47
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
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Abstract
The application provides a method, a device and a system for processing alignment deviation of a photoetching machine, which are applied to the technical field of photoetching machines, wherein the method for processing the alignment deviation of the photoetching machine comprises the following steps: and respectively carrying out two exposures on the alignment mark, wherein the first exposure is blind exposure without visible light alignment, and the second exposure is visible light alignment exposure, and further determining the overlay deviation according to the deviation between the measurement patterns obtained by exposure. The alignment deviation is determined through the difference deviation of the two exposures, so that the whole processing process can be developed in the wafer production process at any time and any place, measurement can be carried out without stopping the machine, the wafer production progress is not delayed, the production efficiency is ensured, whether the alignment deviation of the machine meets the wafer production requirement or not can be found in time, and the measurement process is rapid and accurate.
Description
Technical Field
The application relates to the technical field of photoetching machines, in particular to a method, a device and a system for processing alignment deviation of a photoetching machine.
Background
Alignment related components in a lithography machine, such as a wafer stage, a lens, a reticle stage and the like, which relate to visible light, may change their positions after a long period of use of the apparatus and during maintenance of the apparatus (hereinafter referred to as "repair machine"), for example, a 2nd primary mark (second alignment mark, hereinafter referred to as "2 PM") exposed based on 1st primary mark (first alignment mark, hereinafter referred to as "1 PM") is found to have a large deviation from the overlay of a pattern aligned with 1PM in a subsequent layer using 2PM as an alignment mark.
Disclosure of Invention
In view of this, embodiments of the present disclosure provide a method, an apparatus, and a system for processing overlay deviation of a lithography machine, which can perform measurement operations based on a wafer production program anytime and anywhere, and find out whether the overlay deviation meets the wafer production requirements in time.
The embodiment of the specification provides the following technical scheme:
an embodiment of the present specification provides a method for processing overlay deviation of a lithography machine, including:
respectively forming a first alignment pattern and a second alignment pattern corresponding to an alignment mark on a first silicon chip, forming a first measurement pattern corresponding to the first alignment pattern, and forming a second measurement pattern corresponding to the second alignment pattern, wherein the first alignment pattern is an exposure result obtained by exposing without alignment of visible light, and the second alignment pattern is an exposure result obtained by exposing the first alignment pattern with alignment of visible light;
determining an overlay offset based on an offset between the first metrology pattern and the second metrology pattern.
An embodiment of the present specification further provides a device for processing overlay misalignment of a lithography machine, including:
the exposure module is used for respectively forming a first alignment graph and a second alignment graph corresponding to the alignment mark on a first silicon chip, forming a first measurement graph corresponding to the first alignment graph and forming a second measurement graph corresponding to the second alignment graph, wherein the first alignment graph is an exposure result obtained by exposure without alignment of visible light, and the second alignment graph is an exposure result obtained by exposure with the first alignment graph aligned by the visible light;
a measurement module to determine an overlay offset based on a deviation between the first measurement pattern and the second measurement pattern.
The embodiment of the present specification further provides a lithography machine overlay deviation processing system, which includes an alignment subsystem, an exposure subsystem and a measurement subsystem;
the exposure subsystem is used for respectively forming a first alignment graph and a second alignment graph corresponding to an alignment mark on a first silicon chip, forming a first measurement graph corresponding to the first alignment graph and forming a second measurement graph corresponding to the second alignment graph, wherein the first alignment graph is an exposure result obtained by exposure without alignment of visible light of the alignment subsystem, and the second alignment graph is an exposure result obtained by exposure with the visible light of the alignment subsystem aligned with the first alignment graph;
the metrology subsystem is configured to base a deviation between the first metrology pattern and the second metrology pattern.
Compared with the prior art, the beneficial effects that can be achieved by the at least one technical scheme adopted by the embodiment of the specification at least comprise:
by simulating a normal production program, each machine can carry out exposure operation twice, wherein the first exposure is blind exposure, namely, the first alignment graph (1 PM) and the corresponding first measurement graph are obtained without carrying out exposure through visible light alignment, the second exposure is alignment exposure, namely, the first alignment graph is subjected to alignment exposure through visible light to obtain a second alignment graph (2 PM) and a corresponding second measurement graph, and then the deviation between the measurement graphs of the 1PM and the 2PM is measured to evaluate the machine overlay error value between the blind exposure of the machine and the alignment of the 1PM so as to determine whether the machine is still suitable for wafer production, for example, after the machine repairing of the machine, the overlay deviation of the machine repairing machine can be determined immediately based on the overlay deviation processing scheme of the specification, the measurement is not required to be carried out after 6-7 days, therefore, the overlay deviation of the machine can be measured anytime and anywhere, measures can be taken after timely discovery, and the delay of wafer production progress, economic loss and the like of the machine due to the machine offset of a wafer factory can be avoided.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a schematic diagram of an alignment bias processing scheme for a lithography machine according to the present application;
FIG. 2 is a flow chart of a method for processing an overlay offset of a lithography machine according to the present application;
FIG. 3 is a schematic structural diagram of inner and outer frames formed by measurement patterns corresponding to alignment patterns in the present application;
FIG. 4 is a schematic diagram of determining the deviation of each stage in the present application by performing two exposures;
FIG. 5 is a schematic diagram of an alignment deviation processing apparatus of the photolithography machine according to the present application;
FIG. 6 is a schematic diagram of a system for processing an overlay offset in a lithography machine according to the present application.
Detailed Description
Embodiments of the present application are described in detail below with reference to the accompanying drawings.
The following description of the embodiments of the present application is provided by way of specific examples, and other advantages and effects of the present application will be readily apparent to those skilled in the art from the disclosure herein. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. The present application is capable of other and different embodiments and its several details are capable of modifications and/or changes in various respects, all without departing from the spirit of the present application. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It is noted that various aspects of the embodiments are described below within the scope of the appended claims. It should be apparent that the aspects described herein may be embodied in a wide variety of forms and that any specific structure and/or function described herein is merely illustrative. Based on the present application, one skilled in the art should appreciate that one aspect described herein may be implemented independently of any other aspects and that two or more of these aspects may be combined in various ways. For example, an apparatus may be implemented and/or a method practiced using any number and aspects set forth herein. Additionally, such an apparatus may be implemented and/or such a method may be practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.
It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present application, and the drawings only show the components related to the present application rather than the number, shape and size of the components in actual implementation, and the type, amount and ratio of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
In addition, in the following description, specific details are provided to facilitate a thorough understanding of the examples. However, it will be understood by those skilled in the art that the invention may be practiced without these specific details.
In the process of producing and manufacturing a wafer by exposing 2PM through 1PM alignment on a machine table, alignment components related to visible light alignment, such as a silicon wafer table, a lens, a mask table and the like in photoetching machine equipment are found to have large alignment deviation with alignment of 1PM and a current layer taking 2PM as an alignment mark after long-time use or machine repair of the equipment.
It should be noted that, the alignment in the lithography refers to adjusting the exposure system according to the position of the alignment mark pattern of the reference layer on the wafer, so that the exposure pattern of the current layer is accurately overlapped with the pattern on the wafer; overlay error (also called overlay error) is a parameter for measuring the alignment, and can quantitatively represent the position deviation between the current layer and the reference layer.
In the existing scheme, the overlay deviation can be measured only by adopting special measuring equipment. Therefore, the 2PM mark (2 PM mark) is transferred onto the silicon wafer through the photoresist pattern on the layer of the Active mask (called current layer), and the layer with the overlay deviation is determined by using a special measuring device in the following process, usually waiting for 6 to 7 days, namely, the deviation can be found by using the special measuring device after at least 6 to 7 days, so that the photoetching device is required to wait for 6 to 7 days after repairing the machine, and after the deviation is determined and calibrated by using the special measuring device after the machine is repaired, the deviation is determined to meet the wafer production and manufacturing requirements and then is continuously used for wafer production and manufacturing, or the machine is immediately repaired for wafer production and manufacturing after the photoetching device is repaired, and at the moment, the machine can carry out the wafer production and manufacturing with the possible deviation and can carry out the measurement and calibration by using the special measuring device after at least 6 to 7 days.
Therefore, both of these processing methods inevitably have a great influence on the wafer production and manufacturing of Fab plants, for example, assuming that 2 corresponding machine conditions (such as machine repair) occur in a year, there are 5 machines currently, and about 200 Active masks (i.e. 40 wafers per machine) are passed through in 1 day, so that about 2400 to 2800 wafers are affected in a year. In addition, when the number of the equipments with large deviation exists in the Fab factory, the number of the affected silicon chips is increased, which will cause the cost of producing and manufacturing the wafer in the Fab factory to increase sharply.
Based on this, the present specification provides a processing scheme for rapidly measuring alignment marks of a lithography machine: as shown in fig. 1, for an alignment mark used in machine alignment, a machine may perform exposure twice to form a first alignment pattern (i.e., 1 PM) and a corresponding first measurement pattern, and a second alignment pattern (i.e., 2 PM) and a corresponding second measurement pattern, respectively, so as to quickly determine whether the alignment mark may have a large alignment deviation in subsequent alignment based on a measurement deviation between the two measurement patterns.
The technical solutions provided by the embodiments of the present application are described below with reference to the accompanying drawings.
As shown in fig. 2, embodiments of the present description provide a method, which may include:
step S202, respectively forming a first alignment pattern and a second alignment pattern corresponding to an alignment mark on a first silicon wafer, forming a first measurement pattern corresponding to the first alignment pattern, and forming a second measurement pattern corresponding to the second alignment pattern, wherein the first alignment pattern is an exposure result obtained by exposure without alignment of visible light, and the second alignment pattern is an exposure result obtained by exposure with alignment of the first alignment pattern by visible light;
step S204, forming a first measurement pattern corresponding to the first alignment pattern, and forming a second measurement pattern corresponding to the second alignment pattern;
step S206, determining an overlay deviation based on the deviation between the first measurement pattern and the second measurement pattern.
In the implementation, when the overlay deviation of the machine table needs to be measured, the wafer production process can be simulated, that is, the same as the normal wafer production process, and the wafer for testing is exposed for two times sequentially aiming at the alignment mark of the reference layer: the first time is blind exposure, namely exposure is carried out without alignment of visible light to obtain a first exposure result as a first alignment graph, and the second time is alignment exposure, namely standard exposure is carried out by aligning the first alignment graph with visible light to obtain a second exposure result as a second alignment graph. And obtaining the measuring graphs of 1PM and 2PM to evaluate whether the working condition of the machine is good or not according to the deviation between the measuring graphs.
Through the above steps S202 to S206, each time the machine station needs to measure the overlay deviation, for example, when moving a wafer stage, a lens, a reticle stage and other components related to visible light alignment in the repairing machine, the overlay deviation is determined by performing the above exposure twice and further according to the measured pattern deviation of the exposure result.
In some embodiments, the first measurement pattern may be used as an outer frame pattern and the second measurement pattern may be used as an inner frame pattern, and then the overlay deviation may be quickly determined according to the deviation between the inner frame pattern and the outer frame pattern.
As shown in fig. 3, in the first process, a first alignment pattern and a first measurement pattern (outline pattern) are formed on the silicon wafer by blind exposure. In the second process, a second alignment pattern and a second measurement pattern (inner frame pattern) are formed by using the first alignment pattern as an identifier. In this way, the deviation of the inner and outer frame measurement patterns is measured to reflect the deviation between the first alignment pattern and the second alignment pattern.
In implementation, the first measurement graph can be used as a first outer frame graph, the second measurement graph can be used as a first inner frame graph, and the overlay deviation can be determined through the deviation between the inner frame graph and the outer frame graph.
It should be noted that the first alignment pattern and the second alignment pattern are the same in size and shape, and are different in position.
In some embodiments, as shown in fig. 4, a test pattern (e.g., as a test reference pattern) may be formed based on the results of two exposures when the machine condition is good, and another test pattern (e.g., as an actual pattern) may be formed based on the results of two exposures when the measurement is performed, so that the overlay deviation of the machine can be obtained quickly and accurately based on the deviation of the two patterns.
In implementation, a pre-recorded first measurement reference pattern and a second measurement reference pattern are obtained, the first measurement reference pattern is a measurement pattern corresponding to a first exposure pattern obtained by exposing a second silicon wafer on a machine table under a normal working condition in a manner that the alignment mark is not aligned by visible light, the second measurement reference pattern is a measurement pattern corresponding to a second exposure pattern obtained by exposing the first exposure pattern by visible light, the first measurement reference pattern is used as a second outer frame pattern, the second measurement reference pattern is used as a second inner frame pattern, and finally, an overlay deviation is determined according to a deviation between the second inner frame pattern and the second outer frame pattern.
In the implementation, under the condition that the working condition of the machine station is good, two times of exposure are carried out in sequence, and the results of the two times of exposure are used as the measuring standard of the machine station. The two exposures are still the aforementioned processes of the first blind exposure and the second alignment exposure. In addition, each machine station can perform the above two exposures (i.e. the first blind exposure and the second alignment exposure) under a good condition, and the collected data under the good condition is used as the measurement reference of the machine station.
In the implementation, when the conditions are good, one wafer is selected as a wafer for testing in the wafer production process, and a measurement reference pattern corresponding to the first alignment pattern and the second alignment pattern is formed on the wafer, and when the overlay deviation of the measurement machine is required, the simulated wafer production process sequentially carries out two exposures on one wafer (which may be the same as or different from the wafer for the previous measurement reference) to form a new pattern to be measured corresponding to the first alignment pattern and the second alignment pattern.
Therefore, the overlay deviation can be quickly and accurately obtained by comparing the difference between the measurement standard obtained by good machine condition and the graph to be measured obtained when measurement is needed.
In some embodiments, one deviation (reference deviation) can be formed by two exposure results when the machine condition is good, and another deviation (actual deviation) can be formed by two exposure results in measurement, and the overlay deviation of the machine can be obtained quickly and accurately by comparing the two deviations.
Specifically, when the overlay deviation is determined, the first measurement graph is used as a first outer frame graph, the second measurement graph is used as a first inner frame graph, and the deviation between the first inner frame graph and the first outer frame graph is used as a first measurement deviation.
And obtaining a first measurement reference graph and a second measurement reference graph which are recorded in advance, wherein the first measurement reference graph is a measurement graph corresponding to a first exposure graph obtained by exposing a second silicon wafer on a machine table under the normal working condition aiming at the alignment mark without aligning with visible light, the second measurement reference graph is a measurement graph corresponding to a second exposure graph obtained by exposing the first exposure graph by aligning with the visible light, the first measurement reference graph is used as a second outer frame graph, the second measurement reference graph is used as a second inner frame graph, and the deviation between the second inner frame graph and the second outer frame graph is used as a second measurement deviation.
Thus, based on the difference between the first and second measured deviations, an overlay deviation may be determined.
It should be noted that the deviation between the inner frame and the outer frame of the measurement graph may be obtained based on common image processing, and the image processing is not limited herein.
In the implementation, the exposure system may perform exposure to obtain an exposure result pattern corresponding to two exposures, and at this time, the measurement platform may perform cache storage on the obtained exposure result pattern, and perform pattern processing by using the measurement platform, which is not limited herein.
By forming the Inner frame pattern (Inner Box) and the Outer frame pattern (Outer Box) on the silicon wafer by the alignment marks, the deviation between the results of the two exposures can be obtained quickly. When the conditions are good, the deviation is usually small and meets the alignment requirements. When the conditions become worse, such as the visible light alignment part is moved in the repairing machine and is not calibrated, the deviation of the two exposures will be larger. Therefore, whether the overlay deviation meets the requirement of a machine for producing the wafer can be obtained directly through deviation comparison.
In some embodiments, the overlay offset may be obtained directly based on an exposure derived alignment pattern comparison process.
In implementation, when the overlay deviation is determined, the first measurement graph is used as an outer frame graph, the second measurement graph is used as an inner frame graph, and a first test graph is combined; taking the first measuring reference graph as an outer frame graph and the second measuring reference graph as an inner frame graph to combine a second test graph; finally, an overlay bias is determined based on a difference between the first test pattern and the second test pattern.
By comparing the difference of the overall patterns, the difference of the overall measurement pattern (namely, the second test pattern) obtained when the machine condition is good and the overall measurement pattern (namely, the first test pattern) obtained when the machine condition is to be measured are compared, so that the overlay deviation of the machine can be quickly and accurately determined.
In some embodiments, a lithography machine may be coated for development before exposure, so as to obtain a clearer exposure pattern, which is beneficial to improve the processing precision. Specifically, before the first alignment pattern and the second alignment pattern are respectively acquired for the first alignment mark pattern, a wafer to be exposed is coated with the first alignment mark pattern and the second alignment mark pattern
Photoresist of a thickness to develop in the exposure so that the alignment signal is clearer in the exposure.
It should be noted that the type and thickness of the photoresist can be determined and coated according to actual needs
A photoresist of thickness is merely an example.
In some embodiments, the pre-recorded metrology reference may be stored in a metrology tool, such that when metrology is required, a first metrology reference pattern and a second metrology reference pattern corresponding to the first metrology pattern and the second metrology pattern, respectively, are obtained from the metrology tool. It should be noted that, the overlay deviation can be processed in the metrology tool, so that the exposure result can be buffered in the metrology tool, and the overlay deviation can be quickly and accurately processed by using the processing performance of the metrology tool.
In some embodiments, when the determined overlay deviation exceeds a first preset threshold, the overlay deviation may be calibrated and compensated by modifying a machine parameter. The first preset threshold may be a preset threshold that indicates that the overlay deviation of the machine is no longer suitable for producing the wafer, and the machine parameter may be a machine parameter corresponding to the visible light alignment component that causes the overlay deviation to exceed the first preset threshold, such as a position parameter of a wafer stage, a lens, a mask stage, and the like in the machine.
By adjusting the parameters of the machine, the calibration and compensation are carried out in time when the overlay deviation of the machine does not meet the wafer production requirements, so that the machine can be calibrated without stopping production.
In some embodiments, when it is determined that the overlay deviation does not exceed a second predetermined threshold, the first measurement pattern and the second measurement pattern are respectively used as new measurement benchmarks, where the second predetermined threshold may be a predetermined threshold indicating that the overlay deviation of the machine still fits into the production wafers.
In wafer production, the two exposure operations can be performed at any time, so that the exposure value obtained when the machine condition is good can be used as a measurement standard, and when the measurement is needed, the two exposure operations are performed again, and the overlay deviation can be obtained by comparing the two exposure results of two rounds.
Based on the same inventive concept, the present specification further provides a device and a system for processing overlay deviation of a lithography machine, so as to perform overlay deviation processing based on the method for processing overlay deviation of a lithography machine according to any of the foregoing examples.
As shown in fig. 5, an overlay deviation processing apparatus of a lithography machine includes: an exposure module 301, configured to form a first alignment pattern and a second alignment pattern corresponding to an alignment mark on a first silicon wafer, respectively, form a first measurement pattern corresponding to the first alignment pattern, and form a second measurement pattern corresponding to the second alignment pattern, where the first alignment pattern is an exposure result obtained by performing exposure without alignment by visible light, and the second alignment pattern is an exposure result obtained by performing exposure by aligning the first alignment pattern by visible light; a metrology module 305 for determining an overlay offset based on an offset between the first metrology pattern and the second metrology pattern.
Optionally, the measurement module is specifically configured to: and taking the first measuring graph as a first outer frame graph and the second measuring graph as a first inner frame graph, and determining overlay deviation according to the deviation between the first inner frame graph and the first outer frame graph.
Optionally, the apparatus for processing the lithography machine overlay deviation further includes: an obtaining module 303, where the obtaining module 303 is configured to obtain a first measurement reference pattern and a second measurement reference pattern that are recorded in advance, where the first measurement reference pattern is a measurement pattern corresponding to a first exposure pattern obtained by exposing, on a second silicon wafer, an alignment mark on the second silicon wafer without visible light alignment under a normal working condition of a machine platform, and the second measurement reference pattern is a measurement pattern corresponding to a second exposure pattern obtained by exposing, on the second silicon wafer, the first exposure pattern on the second silicon wafer with visible light alignment after calibration on the machine platform;
the measurement module is specifically configured to:
taking the first measurement graph as a second outer frame graph and taking the second measurement graph as a second inner frame graph to combine a first test graph;
taking the first measurement reference graph as a third outer frame graph and taking the second measurement reference graph as a third inner frame graph to combine a second test graph;
determining an overlay bias based on a difference between the first test pattern and the second test pattern.
Optionally, the apparatus for processing the lithography machine overlay deviation further includes: for determining a first deviation and a second deviation respectively, wherein the first deviation is a difference between the first measurement pattern and the second measurement pattern in the first test pattern, and the second deviation is a deviation between the first measurement reference pattern and the second measurement reference pattern in the second test pattern;
the measurement module is specifically configured to: determining an overlay deviation based on a difference between the first deviation and the second deviation.
Optionally, the apparatus further comprises a developing unit (not shown) for coating the first alignment mark pattern and the second alignment mark pattern before acquiring the first alignment pattern and the second alignment pattern respectively
A thickness of photoresist to develop in an exposure.
Optionally, the obtaining module obtains the first metrology reference pattern and the second metrology reference pattern from a metrology tool.
Optionally, the apparatus for processing the lithography machine overlay deviation further includes: and a calibration compensation module (not shown in the figure) for modifying the machine parameters to perform calibration compensation on the overlay deviation when the determined overlay deviation exceeds a first preset threshold.
Optionally, the apparatus for processing overlay deviation of a lithography machine further includes: and a storage module (not shown in the figure) configured to, when it is determined that the overlay deviation does not exceed a second preset threshold, respectively use the first measurement pattern and the second measurement pattern as new measurement references.
The above-described schematic apparatus for processing overlay deviation of a lithography machine corresponds to the above-described method for processing overlay deviation of a lithography machine, and therefore, the description thereof will not be repeated.
As shown in fig. 4, a lithography machine overlay offset processing system includes an alignment subsystem 401, an exposure subsystem 403, and a metrology subsystem 405.
The exposure subsystem is used for respectively forming a first alignment graph and a second alignment graph corresponding to an alignment mark on a first silicon chip, forming a first measurement graph corresponding to the first alignment graph and forming a second measurement graph corresponding to the second alignment graph, wherein the first alignment graph is an exposure result obtained by exposure without alignment of visible light of the alignment subsystem, and the second alignment graph is an exposure result obtained by exposure with visible light of the alignment subsystem aligned with the first alignment graph;
the metrology subsystem is configured to base a deviation between the first metrology pattern and the second metrology pattern.
It should be noted that the alignment subsystem may include various alignment components required for lithography, such as a mask stage, an optical path, an objective lens, etc., the exposure subsystem may include exposure-related equipment, such as an exposure stage and an exposure pattern acquisition (e.g., a camera), the metrology subsystem may include metrology-related equipment, such as a metrology equipment and a metrology stage, etc., and these subsystems may be equipment in an existing lithography machine. In addition, each subsystem in the lithography machine overlay deviation processing system can be set and adjusted according to the operation related to the lithography machine overlay deviation processing method, and the description is not repeated here.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments can be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the product embodiments described later, since they correspond to the method, the description is simple, and the relevant points can be referred to the partial description of the system embodiments.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A method for processing overlay deviation of a lithography machine is characterized by comprising the following steps:
respectively forming a first alignment pattern and a second alignment pattern corresponding to an alignment mark on a first silicon chip, forming a first measurement pattern corresponding to the first alignment pattern, and forming a second measurement pattern corresponding to the second alignment pattern, wherein the first alignment pattern is an exposure result obtained by exposing without alignment of visible light, and the second alignment pattern is an exposure result obtained by exposing the first alignment pattern with alignment of visible light;
determining an overlay offset based on an offset between the first metrology pattern and the second metrology pattern.
2. The lithography machine overlay bias processing method of claim 1, wherein determining an overlay bias based on a bias between the first metrology pattern and the second metrology pattern comprises:
and taking the first measurement graph as a first outer frame graph and the second measurement graph as a first inner frame graph, and determining the overlay deviation according to the deviation between the first inner frame graph and the first outer frame graph.
3. The alignment deviation processing method of claim 1, further comprising: acquiring a first measurement reference pattern and a second measurement reference pattern which are recorded in advance, wherein the first measurement reference pattern is a measurement pattern corresponding to a first exposure pattern which is obtained by exposing the alignment mark on a second silicon wafer without aligning with visible light under the normal working condition of a machine platform, and the second measurement reference pattern is a measurement pattern corresponding to a second exposure pattern which is obtained by exposing the first exposure pattern by aligning with the visible light;
determining an overlay offset based on an offset between the first metrology pattern and the second metrology pattern comprises:
taking the first measurement graph as a second outer frame graph and taking the second measurement graph as a second inner frame graph to combine a first test graph;
taking the first measurement reference graph as a third outer frame graph and taking the second measurement reference graph as a third inner frame graph to combine a second test graph;
determining an overlay bias based on a difference between the first test pattern and the second test pattern.
4. The alignment deviation processing method of claim 3, further comprising: respectively determining a first deviation and a second deviation, wherein the first deviation is a deviation between the first measurement pattern and the second measurement pattern in the first test pattern, and the second deviation is a deviation between the first measurement reference pattern and the second measurement reference pattern in the second test pattern;
determining an overlay offset based on a difference between the first test pattern and the second test pattern comprises: determining an overlay deviation based on a difference between the first deviation and the second deviation.
5. The alignment deviation processing method of the lithography machine according to any one of claims 1 to 4, further comprising:
by coating the first silicon wafer before the first alignment pattern and the second alignment pattern are obtained for the alignment mark, respectively
A photoresist of a thickness to develop in exposure;
and/or when the determined overlay deviation exceeds a first preset threshold value, modifying parameters of a machine table to calibrate and compensate the overlay deviation;
and/or when the alignment deviation is determined not to exceed a second preset threshold value, respectively taking the first measurement graph and the second measurement graph as new measurement benchmarks.
6. A device for processing the overlay offset of a lithography machine is characterized by comprising:
the exposure module is used for respectively forming a first alignment graph and a second alignment graph corresponding to the alignment mark on a first silicon chip, forming a first measurement graph corresponding to the first alignment graph and forming a second measurement graph corresponding to the second alignment graph, wherein the first alignment graph is an exposure result obtained by exposure without alignment of visible light, and the second alignment graph is an exposure result obtained by exposure with alignment of the first alignment graph by the visible light;
a measurement module for determining an overlay offset based on a deviation between the first measurement pattern and the second measurement pattern.
7. The apparatus of claim 6, wherein the metrology module is specifically configured to:
and taking the first measurement graph as a first outer frame graph and the second measurement graph as a first inner frame graph, and determining the overlay deviation according to the deviation between the first inner frame graph and the first outer frame graph.
8. The apparatus of claim 6, further comprising: the system comprises an acquisition module, a calibration module and a control module, wherein the acquisition module is used for acquiring a first measurement reference graph and a second measurement reference graph which are recorded in advance, the first measurement reference graph is a measurement graph corresponding to a first exposure graph obtained by exposing an alignment mark on a second silicon wafer in a non-visible light alignment mode under the normal working condition of a machine platform, and the second measurement reference graph is a measurement graph corresponding to a second exposure graph obtained by exposing the first exposure graph on the second silicon wafer in a visible light alignment mode after calibration on the machine platform;
the measurement module is specifically configured to:
taking the first measurement graph as a second outer frame graph and taking the second measurement graph as a second inner frame graph to combine a first test graph;
taking the first measurement reference graph as a third outer frame graph and taking the second measurement reference graph as a third inner frame graph to combine a second test graph;
determining an overlay bias based on a difference between the first test pattern and the second test pattern.
9. The apparatus of claim 8, further comprising:
a deviation determining module, configured to determine a first deviation and a second deviation respectively, where the first deviation is a difference between the first metrology pattern and the second metrology pattern in the first test pattern, and the second deviation is a deviation between the first metrology reference pattern and the second metrology reference pattern in the second test pattern;
the measurement module is specifically configured to: determining an overlay deviation based on a difference between the first deviation and the second deviation.
10. A lithography machine overlay deviation processing system, comprising: an alignment subsystem, an exposure subsystem and a metrology subsystem;
the exposure subsystem is used for respectively forming a first alignment graph and a second alignment graph corresponding to an alignment mark on a first silicon chip, forming a first measurement graph corresponding to the first alignment graph and forming a second measurement graph corresponding to the second alignment graph, wherein the first alignment graph is an exposure result obtained by exposure without alignment of visible light of the alignment subsystem, and the second alignment graph is an exposure result obtained by exposure with the visible light of the alignment subsystem aligned with the first alignment graph;
the metrology subsystem is configured to base a deviation between the first metrology pattern and the second metrology pattern.
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