CN115537728A - 一种高致密复合型原子氧防护薄膜 - Google Patents
一种高致密复合型原子氧防护薄膜 Download PDFInfo
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 239000002131 composite material Substances 0.000 title claims abstract description 15
- 230000001681 protective effect Effects 0.000 title claims abstract description 14
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000011368 organic material Substances 0.000 claims description 3
- 229920006268 silicone film Polymers 0.000 claims 1
- 238000000576 coating method Methods 0.000 abstract description 14
- 230000007547 defect Effects 0.000 abstract description 14
- 239000011248 coating agent Substances 0.000 abstract description 12
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 229910004298 SiO 2 Inorganic materials 0.000 abstract description 2
- 230000007774 longterm Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 30
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 6
- 239000011253 protective coating Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 230000002265 prevention Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004447 silicone coating Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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Abstract
本发明公开了一种高致密复合型原子氧防护薄膜。首先在有机物基底表面设计一层厚度为1~100nm的致密无微观缺陷的SiOx薄膜,作为硅氧烷涂层生长的“种子层”;随后在SiOx种子层上设计厚度为200~600nm的硅氧烷涂层。最后在硅氧烷表面上设计一层厚度为5~200nm的SiOx薄膜,作为帽子层。本发明的优点在于:SiOx种子层可以有效降低硅氧烷涂层中的微观缺陷,防止形成原子氧剥蚀通道。SiOx帽子层可以有效遮盖硅氧烷表面孔洞、裂纹等缺陷,同时增强原子氧防护性能。为低轨道、超低轨道卫星长期在轨运行提供原子氧防护方法,保证长寿命、低轨道卫星在轨性能和使用寿命。
Description
技术领域
本发明涉及防原子氧剥蚀技术领域,具体涉及一种高致密复合型原子氧防护薄膜。
背景技术
航天器在低地球轨道环境中运行过程中,其表面功能材料或器件(如太阳电池阵、光学材料、热控涂层等)将遭受原子氧氧化侵蚀,导致其功能失效。因此,对高性能原子氧防护涂层提出迫切需求。
目前只要在材料表面沉积一层足够致密的防护涂层,就可防止原子氧对基底材料的剥蚀效应,例如有机无机杂化硅氧烷涂层等具有良好的低轨原子氧防护能力,可有效保护基底不被原子氧侵蚀。然而,硅氧烷涂层中存在孔洞等微观缺陷,导致原子氧对基底材料严重侵蚀,是造成整体质量损失的根本原因。此外,硅氧烷涂层中存在有机成分,在长时间原子氧辐照下,有机成分会被原子氧氧化形成易挥发物质,逐渐导致硅氧烷涂层中形成孔洞,导致防原子氧性能失效。
因此,为提升硅氧烷原子氧防护涂层的性能,必须减少原子氧防护薄膜的微观缺陷,研制高致密复合型原子氧防护薄膜是至关重要的。
发明内容
有鉴于此,本发明提供了一种高致密复合型原子氧防护薄膜,该方在有机物基底表面设计了种子层/硅氧烷中间层/帽子层的复合薄膜。设计一层致密无微观缺陷的SiOx种子层可以有效降低硅氧烷涂层中的微观缺陷,防止形成原子氧剥蚀通道。SiOx帽子层可以有效遮盖硅氧烷表面孔洞、裂纹等缺陷,同时增强原子氧防护性能,使防护涂层的综合性能显著提高。
为达到上述目的,本发明的技术方案为:一种高致密复合型原子氧防护薄膜,防护薄膜在有机材料基底上由下至上顺次制作有种子层、硅氧烷膜中间层以及帽子层。
种子层的材质为SiOx,x取值为[1,2]范围内的实数;
帽子层的材质为SiOx,x取值为[1,2]范围内的实数。
进一步地,种子层厚度在1至100nm之间。
进一步地,硅氧烷膜中间层的厚度在200至600nm之间,具备柔性和抗原子氧能力。
进一步地,帽子层的厚度在5nm至200nm之间。
有益效果:
本发明提供的一种高致密复合型原子氧防护薄膜,设计的复合涂层中的硅氧烷涂层具有一定柔韧性,且与基底材料附着力强的优点;设计的SiOx种子层具有致密无微观缺陷且平整特性,可以有效降低硅氧烷涂层中的微观缺陷,防止形成原子氧剥蚀通道。设计的SiOx帽子层也具有致密无微观缺陷且平整特性,可以有效遮盖硅氧烷表面孔洞、裂纹等缺陷,同时增强原子氧防护性能,使防护涂层的综合性能显著提高。满足低轨道、超低轨道卫星长期在轨运行对原子氧防护需求。
附图说明
图1为本发明技术解决方案的示意图。1-基底材料,2-设计的SiOx种子层,3-设计的硅氧烷中间层,4-设计的SiOx帽子层。
具体实施方式
下面结合附图并举实施例,对本发明进行详细描述。
本发明提供了一种高致密复合型原子氧防护薄膜,防护薄膜在有机材料基底1上由下至上顺次制作有种子层2、硅氧烷膜中间层3以及帽子层4。
种子层2的材质为SiOx,x取值为[1,2]范围内的实数。
帽子层4的材质为SiOx,x取值为[1,2]范围内的实数。
x取值为1时即为氧化硅薄膜,x取值为2时即为二氧化硅薄膜。
实施例1:
本实施例包括如下设计:
(1)在有机物基底表面设计一层二氧化硅薄膜或者类二氧化硅SiOx薄膜,x取值为1~2之间,二氧化硅薄膜或者类二氧化硅SiOx薄膜厚度在1~100nm范围内,具有致密、无微观缺陷且平整的特性。
(2)将(1)所设计的二氧化硅薄膜或者类二氧化硅SiOx薄膜作为种子层,设计一层硅氧烷薄膜,厚度在200~600nm之间,硅氧烷涂层具有一定的柔性和抗原子氧能力。
(3)在硅氧烷表面上设计一层SiO2薄膜,作为“帽子层”,厚度在5~200nm之间,具有致密、无微观缺陷且平整的特性。该防护设计方法有助于有效降低硅氧烷涂层中的微观缺陷,修复硅氧烷涂层的表面缺陷缺陷,同时增强原子氧防护性能。
综上所述,以上仅为本发明的较佳实施例而已,并非用于限定本发明的保护范围。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (4)
1.一种高致密复合型原子氧防护薄膜,其特征在于,所述防护薄膜在有机材料基底(1)上由下至上顺次制作有种子层(2)、硅氧烷膜中间层(3)以及帽子层(4);
所述种子层(2)的材质为SiOx,x取值为[1,2]范围内的实数;
所述帽子层(4)的材质为SiOx,x取值为[1,2]范围内的实数。
2.如权利要求1所述的一种高致密复合型原子氧防护薄膜,其特征在于,所述种子层(2)厚度在1至100nm之间。
3.如权利要求1所述的一种高致密复合型原子氧防护薄膜,其特征在于,
所述硅氧烷膜中间层(3)的厚度在200至600nm之间。
4.如权利要求1所述的一种高致密复合型原子氧防护薄膜,其特征在于,所述帽子层(4)的厚度在5nm至200nm之间。
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Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1760126A1 (en) * | 2004-06-11 | 2007-03-07 | Toray Industries, Inc. | Siloxane coating material, optical articles and process for the production of siloxane coating materials |
CN102202900A (zh) * | 2008-10-30 | 2011-09-28 | 富士胶片株式会社 | 流体喷射器上的非湿润涂层 |
CN202306493U (zh) * | 2011-08-25 | 2012-07-04 | 威鸿(厦门)光学有限公司 | 触摸装置 |
CN106397807A (zh) * | 2016-08-30 | 2017-02-15 | 兰州空间技术物理研究所 | 一种复合原子氧防护涂层 |
CN107344817A (zh) * | 2017-06-21 | 2017-11-14 | 合肥市惠科精密模具有限公司 | 一种用于tft‑lcd显示屏的高耐磨性防*** |
CN108774333A (zh) * | 2018-06-25 | 2018-11-09 | 北京化工大学 | 一种耐原子氧聚酰亚胺膜层材料及其制备方法 |
CN109285915A (zh) * | 2018-08-08 | 2019-01-29 | 西安电子科技大学 | 一种柔性瞬态硅薄膜光电晶体管及制作方法 |
CN111116962A (zh) * | 2019-12-26 | 2020-05-08 | 兰州空间技术物理研究所 | 一种用于空间聚合物材料的防原子氧薄膜的制备方法 |
CN112479601A (zh) * | 2020-09-27 | 2021-03-12 | 比亚迪股份有限公司 | 一种覆膜制品及其制备方法、电子设备壳体 |
CN112646220A (zh) * | 2020-05-21 | 2021-04-13 | 中国科学院上海硅酸盐研究所 | 一种防原子氧聚酰亚胺复合薄膜及其制备方法 |
KR20210103817A (ko) * | 2020-02-14 | 2021-08-24 | 한남대학교 산학협력단 | 가시광선 투과율이 높은 청광 차단 필름 및 이의 제조방법 |
CN113874454A (zh) * | 2019-05-21 | 2021-12-31 | 美国陶氏有机硅公司 | 聚有机硅氧烷防粘涂层及其制备和用途 |
-
2022
- 2022-10-10 CN CN202211234011.7A patent/CN115537728A/zh active Pending
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1760126A1 (en) * | 2004-06-11 | 2007-03-07 | Toray Industries, Inc. | Siloxane coating material, optical articles and process for the production of siloxane coating materials |
CN102202900A (zh) * | 2008-10-30 | 2011-09-28 | 富士胶片株式会社 | 流体喷射器上的非湿润涂层 |
CN202306493U (zh) * | 2011-08-25 | 2012-07-04 | 威鸿(厦门)光学有限公司 | 触摸装置 |
CN106397807A (zh) * | 2016-08-30 | 2017-02-15 | 兰州空间技术物理研究所 | 一种复合原子氧防护涂层 |
CN107344817A (zh) * | 2017-06-21 | 2017-11-14 | 合肥市惠科精密模具有限公司 | 一种用于tft‑lcd显示屏的高耐磨性防*** |
CN108774333A (zh) * | 2018-06-25 | 2018-11-09 | 北京化工大学 | 一种耐原子氧聚酰亚胺膜层材料及其制备方法 |
CN109285915A (zh) * | 2018-08-08 | 2019-01-29 | 西安电子科技大学 | 一种柔性瞬态硅薄膜光电晶体管及制作方法 |
CN113874454A (zh) * | 2019-05-21 | 2021-12-31 | 美国陶氏有机硅公司 | 聚有机硅氧烷防粘涂层及其制备和用途 |
CN111116962A (zh) * | 2019-12-26 | 2020-05-08 | 兰州空间技术物理研究所 | 一种用于空间聚合物材料的防原子氧薄膜的制备方法 |
KR20210103817A (ko) * | 2020-02-14 | 2021-08-24 | 한남대학교 산학협력단 | 가시광선 투과율이 높은 청광 차단 필름 및 이의 제조방법 |
CN112646220A (zh) * | 2020-05-21 | 2021-04-13 | 中国科学院上海硅酸盐研究所 | 一种防原子氧聚酰亚胺复合薄膜及其制备方法 |
CN112479601A (zh) * | 2020-09-27 | 2021-03-12 | 比亚迪股份有限公司 | 一种覆膜制品及其制备方法、电子设备壳体 |
Non-Patent Citations (6)
Title |
---|
LONGFEI HU等: "Effects of Vacuum Ultraviolet Radiation on Atomic Oxygen Erosion of Polysiloxane/SiO2 Hybrid Coatings", 《JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY》, vol. 25, no. 4, 31 July 2009 (2009-07-31), pages 483 - 488 * |
SHUWANG DUO等: "Effect of atomic oxygen exposure on Si implanted siloxane coatings in low earth orbit environment", 《ADVANCED MATERIALS RESEARCH》, vol. 314, 16 August 2011 (2011-08-16), pages 249 - 252 * |
多树旺等: "低地轨道环境中的原子氧对空间材料的侵蚀与防护涂层", 《腐蚀科学与防护技术》, vol. 14, no. 3, 20 June 2002 (2002-06-20), pages 152 - 156 * |
李中华等: "航天器表面材料原子氧防护方法", 《真空与低温》, vol. 21, no. 6, 28 December 2015 (2015-12-28), pages 360 - 364 * |
赵琳等: "原子氧防护涂层技术研究", 《真空与低温》, vol. 17, no. 4, 15 December 2011 (2011-12-15), pages 187 - 192 * |
郑阔海等: "硅氧烷原子氧防护膜工艺及防护性能研究", 《航天器环境工程》, vol. 27, no. 6, 15 December 2010 (2010-12-15), pages 751 - 755 * |
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