CN115537727B

CN115537727B - Silicon-alkene composite film, preparation method thereof, electrode and lithium ion battery

Info

Publication number: CN115537727B
Application number: CN202211538851.2A
Authority: CN
Inventors: 易典; 王荣福
Original assignee: Shenzhen Hanyu New Material Technology Co ltd
Current assignee: Shenzhen Hanyu New Material Technology Co ltd
Priority date: 2022-12-02
Filing date: 2022-12-02
Publication date: 2023-03-28
Anticipated expiration: 2042-12-02
Also published as: CN115537727A

Abstract

The disclosure provides a silylene composite film, a preparation method thereof, an electrode and a lithium ion battery. The preparation method of the silylene composite film comprises the following steps: providing a carbon substrate layer; repeating the step of preparing the silylene layer and the step of preparing the carbon guide layer on the carbon substrate layer for multiple times; wherein the step of preparing the silylene layer and the step of preparing the carbon guiding layer are alternately performed; the step of preparing the silylene layer includes: sputtering silicon atoms by means of magnetron sputtering to form a silylene layer, the step of preparing the carbon guide layer comprising: carbon atoms are sputtered by means of magnetron sputtering to form a carbon guide layer. The magnetron sputtering method is suitable for preparing the silicon alkene film on a large scale industrially, and can obviously improve the preparation efficiency and reduce the preparation cost compared with the molecular beam epitaxy method, the chemical vapor deposition method and the like in the traditional technology.

Description

Silicon-alkene composite film, preparation method thereof, electrode and lithium ion battery

Technical Field

The invention relates to the technical field of two-dimensional materials, in particular to a silylene composite film, a preparation method thereof, an electrode and a lithium ion battery.

Background

Two-dimensional materials, which are formally proposed along with the advent of graphene, generally have a thickness of only a single atomic layer to several tens of atomic layers, and thus have many unique properties, such as high carrier mobility, excellent optical and mechanical properties, and a huge specific surface area, which have received wide attention. Since graphene was successfully prepared, researchers have further explored many new two-dimensional materials, such as hexagonal boron nitride, metal sulfides, metal selenides, and phosphenes, among others.

Silylene is an allotrope of silicon with a two-dimensional layered structure, and also has a similar honeycomb structure. Unlike graphene, which exhibits a planar structure, silicon atoms in the silicon graphene layer are not in the same plane, which causes the silicon graphene layer to exhibit a periodic bent structure. The silylene not only has a large specific surface area, but also has enough space for absorbing lithium ions and transporting the lithium ions, and is an electrode material with a promising application prospect.

In the existing preparation method, the molecular beam epitaxy method or the chemical vapor deposition method is mainly adopted to grow the silylene on a specific substrate. However, these methods not only require relatively precise equipment and relatively harsh reaction conditions, but also have low preparation efficiency, are only suitable for preparing a small amount of silylene materials in a laboratory for research, and are not suitable for large-scale production. Some technologies produce the silylene nanosheet by moderately oxidizing calcium silicide, but the silylene prepared in the way has poor quality, and the obtained powder material is the silylene nanosheet, so that the performance of the silylene is not fully exerted.

Disclosure of Invention

Therefore, in order to improve the preparation efficiency of the silylene and reduce the preparation cost thereof while ensuring the effective exertion of the silylene performance, a preparation method of the silylene composite film is needed.

According to some embodiments of the present disclosure, a method for preparing a silicon-ene composite film is disclosed, which comprises the following steps:

providing a carbon substrate layer;

repeating the step of preparing a silylene layer and the step of preparing a carbon guiding layer on the carbon substrate layer for a plurality of times; wherein the step of preparing the silylene layer and the step of preparing the carbon guiding layer are alternately performed;

the step of preparing the silicon alkene layer comprises: sputtering silicon atoms by means of magnetron sputtering to form the silylene layer, the step of preparing the carbon guide layer comprising: and sputtering carbon atoms by means of magnetron sputtering to form the carbon guide layer.

In some embodiments of the present disclosure, the step of providing a carbon substrate layer comprises: preparing a catalytic layer on a substrate, and sputtering carbon atoms on the catalytic layer by means of magnetron sputtering to form the carbon substrate layer.

In some embodiments of the present disclosure, the step of preparing the silicon alkene layer and the step of preparing the carbon guiding layer are performed in the same deposition chamber.

In some embodiments of the present disclosure, in the step of preparing the silylene layer and the step of preparing the carbon guide layer, an ambient temperature in the deposition chamber is controlled to be 20 ℃ to 100 ℃.

In some embodiments of the present disclosure, in the step of preparing the silicon alkene layer, the thickness of the silicon alkene layer is controlled to be 1nm to 10nm; and/or the presence of a gas in the gas,

in the step of preparing the carbon guide layer, the thickness of the carbon guide layer is controlled to be 1nm to 10nm.

In some embodiments of the present disclosure, the number of layers of the prepared silylene layer is equal to or greater than 50 layers, and the number of layers of the prepared carbon guide layer is equal to or greater than 50 layers.

In some embodiments of the present disclosure, in the step of alternately depositing the silicon alkene layer and the carbon guiding layer, the total thickness of the deposited silicon alkene layer and the deposited carbon guiding layer is controlled to be 500nm to 5 μm.

Further, according to still other embodiments of the present disclosure, there is also provided a silicon-ene composite film, including: the carbon substrate comprises a carbon substrate layer, a plurality of silicon alkene layers and a plurality of carbon guide layers, wherein the silicon alkene layers and the carbon guide layers are alternately stacked and arranged on the carbon substrate layer.

Further, according to still other embodiments of the present disclosure, an electrode is further provided, which includes a current collector and a silicon-ene composite film, where the silicon-ene composite film is prepared by the method for preparing a silicon-ene composite film according to any one of the embodiments, or the silicon-ene composite film is the silicon-ene composite film according to the embodiment.

Further, according to still other embodiments of the present disclosure, there is provided a lithium ion battery including a positive electrode, a negative electrode, and an electrolyte, where the positive electrode and the negative electrode are disposed opposite to each other, the electrolyte is disposed between the positive electrode and the negative electrode, and the negative electrode is the electrode of the above embodiments.

Although magnetron sputtering is a common film preparation method, a crystalline silicon film is formed by directly bombarding a silicon target material by adopting a magnetron sputtering mode instead of silylene, so that the silylene film is not prepared by adopting the magnetron sputtering mode in the traditional technology.

The inventors of the present disclosure found through research that a small amount of silicon atoms magnetron sputtered on the carbon substrate layer can spontaneously form a silylene structure on the surface of the carbon material, but only a small number of silylene layers can be formed, and a large amount of silylene material cannot be formed. The preparation method of the silicon alkene composite film provided by the disclosure develops a new method, and the preparation of a large amount of silicon alkene layers through magnetron sputtering is realized through a mode of alternately depositing the silicon alkene layers and the carbon guide layers. The carbon guide layer is a thin film formed in a magnetron sputtering mode, has a structure similar to that of the silicon alkene layer, and can guide sputtered silicon atoms to form the silicon alkene layer. Simultaneously, the carbon guide layer of preparation can also play the effect of supporting the silylene layer and consolidating multilayer silylene layer between the adjacent silylene layer, keeps the stable in structure on silylene layer to the introduction of carbon guide layer still is favorable to the electric conduction between the adjacent silylene layer, is favorable to the effective performance of silylene layer performance. The magnetron sputtering method is suitable for preparing the silicon alkene film on a large scale industrially, and can obviously improve the preparation efficiency and reduce the preparation cost compared with the molecular beam epitaxy method, the chemical vapor deposition method and the like in the traditional technology.

Drawings

FIG. 1 is a schematic structural diagram of a carbon-based layer disposed on a substrate;

FIG. 2 is a schematic structural diagram of a layer of a silicon on the structure of FIG. 1;

FIG. 3 is a schematic structural view of a carbon guiding layer fabricated on the structure shown in FIG. 2;

FIG. 4 is a schematic structural view of a repeating preparation of a silylene layer and a carbon guiding layer on the structure shown in FIG. 3;

wherein the reference numerals are as follows:

100. a substrate; 110. a carbon base layer; 120. a silicon alkene layer; 130. a carbon guide layer.

Detailed Description

In order that the invention may be more fully understood, reference will now be made to the following description. Preferred embodiments of the present invention are presented herein. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. As used herein, "plurality" includes two and more than two items. As used herein, "above a certain number" should be understood to mean a certain number and a range greater than a certain number.

In order to improve the preparation efficiency of the silylene and reduce the preparation cost of the silylene while ensuring the effective performance of the silylene, the disclosure provides a method for preparing a silylene composite film, which comprises the following steps:

providing a carbon substrate layer;

repeating the step of preparing the silylene layer and the step of preparing the carbon guide layer on the carbon substrate layer for multiple times; wherein the step of preparing the silylene layer and the step of preparing the carbon guide layer are alternately performed;

the step of preparing the silylene layer includes: sputtering silicon atoms by means of magnetron sputtering to form a silylene layer, the step of preparing the carbon guide layer comprising: carbon atoms are sputtered by means of magnetron sputtering to form a carbon guide layer.

Magnetron sputtering is a physical vapor deposition method, which generates ions by electron bombardment of working gas and causes the generated ions to bombard a target material, so that the material of the target material is sputtered onto a substrate in the form of atoms or molecules. Magnetron sputtering is a process suitable for preparing large-area films, and has the advantages of high preparation efficiency and low preparation cost compared with the chemical vapor deposition method. However, the silicon target is bombarded by directly adopting a magnetron sputtering mode to form a polycrystalline silicon or microcrystalline silicon film instead of the silicon alkene, so that the magnetron sputtering mode is suitable for preparing the film on a large scale, but the magnetron sputtering mode is not adopted to prepare the silicon alkene in the traditional technology.

The inventors of the present disclosure found through research that a small amount of silicon atoms magnetron sputtered on the carbon substrate layer can spontaneously form a silylene structure on the surface of the carbon material, but only a small number of silylene layers can be formed, and a large amount of silylene material cannot be formed. The method is characterized in that a silicon alkene layer and a carbon guide layer are alternately deposited, and are guided mutually, so that a large amount of silicon atoms are prevented from gathering to form a polycrystalline silicon or microcrystalline silicon film layer. Wherein the carbon guiding layer is capable of guiding the sputtered silicon atoms to form a silylene layer. Meanwhile, the carbon guide layer prepared between the adjacent silicon alkene layers can also play a role in supporting the silicon alkene layers and reinforcing the multiple silicon alkene layers, so that the structural stability of the silicon alkene layers is maintained, and the performance of the silicon alkene layers is effectively exerted. And the magnetron sputtering mode is suitable for preparing the silicon alkene film on a large scale industrially, and compared with a molecular beam epitaxy method, a chemical vapor deposition method and the like in the traditional technology, the preparation efficiency can be obviously improved, and the preparation cost can be reduced.

It is to be understood that in the above embodiments provided by the present disclosure, the carbon substrate may be a two-dimensional material of carbon, such as graphene. The graphene may be a single layer of graphene or may be a multilayer of graphene.

In the preparation method of the silicon alkene composite film of the embodiment, the carbon guide layer is prepared between the adjacent silicon alkene layers, so that not only can the preparation of multiple silicon alkene layers be realized, but also the structure of each silicon alkene layer can be ensured to be stable. In some examples of this embodiment, the deposited silicon-ene layer and carbon guiding layer are multi-layered to obtain more silicon-ene material. Here, "multilayer" refers to two or more layers.

In some examples of this embodiment, the step of providing the carbon base layer comprises: preparing a catalytic layer on a substrate, and preparing graphene based on the catalytic layer to form a carbon-based layer. Wherein, optionally, the catalytic layer may comprise a metallic material for catalyzing carbon atoms to form graphene, such as one or more of copper, nickel, and cobalt. The manner of preparing the carbon substrate layer may be selected from a chemical vapor deposition method or a physical vapor deposition method. In order to improve the preparation efficiency, a physical vapor deposition method, such as a magnetron sputtering method, may be used to prepare the carbon substrate layer. Alternatively, the target used in the magnetron sputtering process may be a graphite target. The carbon substrate layer is prepared on the catalyst layer, so that the graphene layer with good quality and complete film can be grown, and the subsequent deposition of the silicon graphene layer or the graphene support layer is facilitated.

In some examples of this embodiment, the thickness of the deposited carbon underlayer may be between 1nm to 500nm. Optionally, the thickness of the carbon substrate layer is between 10nm and 200nm. Further, the thickness of the carbon base layer is 10nm to 100nm.

In other examples of this embodiment, the carbon substrate may also be pre-prepared and transferred to the substrate. In contrast, the carbon-based layer is directly prepared on the substrate, and the carbon-based layer which is directly bonded to the substrate more tightly can be obtained. Thus, the silicon alkene layer deposited on the carbon base layer subsequently can be bonded with the substrate more tightly.

In some examples of this embodiment, the material of the substrate may be selected from conductive materials. Alternatively, the material of the substrate may be one or more of copper, aluminum, nickel, gold, silver, and carbon. In addition, the catalytic layer may be formed directly on the substrate from the material of the substrate. The conductive material is used as the substrate, so that the silicon-alkene composite film formed by subsequent preparation can be directly put into use without separating the prepared silicon-alkene composite film from the substrate.

It is understood that in the step of depositing the silylene layer and the carbon guiding layer alternately on the surface of the carbon substrate, the silylene layer may be deposited on the surface of the carbon substrate first, or the carbon guiding layer may be deposited on the surface of the carbon substrate first. Alternatively, a silylene layer may be deposited on the surface of the carbon substrate first to obtain a silylene layer directly contacting the carbon substrate. And in the step of alternately preparing the silicon alkene layer and the carbon guide layer, the adjacent silicon alkene layer and the carbon guide layer are contacted, namely the silicon alkene layer can be directly deposited on the formed carbon guide layer, and the carbon guide layer can be directly deposited on the formed silicon alkene layer.

In some examples of this embodiment, the carbon guide layer is deposited by magnetron sputtering. Alternatively, the target material used to deposit the carbon guide layer may be a graphite target. At this time, both the method of depositing the carbon guide layer and the method of depositing the silylene layer are magnetron sputtering methods. Optionally, the step of preparing the silylene layer and the step of preparing the carbon guiding layer are performed in the same deposition chamber. Further optionally, the process of preparing the silylene layer and the carbon guiding layer is continued in the same deposition chamber. For example, a silicon target and a graphite target may be placed in the same deposition chamber, the silicon target may be controlled to bombard during deposition of the silicon layer, and the graphite target may be bombarded during deposition of the carbon guiding layer.

In the actual preparation process, because the silicon graphene layer structure has a certain bending, the carbon atoms sputtered on the silicon graphene layer can generate certain lattice distortion compared with the traditional graphene, but the continuous preparation of the silicon graphene composite structure is not influenced. In addition, there may be some micro-holes on the surface of the carbon guide layer prepared by magnetron sputtering on the silylene due to lattice distortion and magnetron sputtering process. When the silicon alkene composite film is used as an electrode, the micro-holes can be used as ion channels to allow ions to pass through, and can accommodate volume change of silicon alkene during charge and discharge processes, so that structural stability of the silicon alkene is improved. In addition, the graphene support layer prepared by magnetron sputtering keeps the integral layer shape of the composite film while generating lattice distortion, so that the silicon-alkene composite film is more beneficial to being used as an electrode material. If the composite structure is prepared by a chemical vapor deposition method, the formed silicon alkene and the graphene can be spontaneously curled into a spherical material under the process condition of higher temperature, which is not beneficial to the practical application of the composite structure.

In some examples of this embodiment, the temperature is 20 ℃ to 100 ℃ in the steps of preparing the silylene layer and preparing the carbon guide layer. The preparation of the silylene by the chemical vapor deposition method needs to be carried out in an environment of more than 600 ℃. Although this temperature is more suitable for the growth of the silylene, it is more severe, and many other materials are difficult to maintain at this temperature, which limits the specific application of the silylene, and the cost required to build this temperature is also significantly higher. According to the method, the silicon alkene composite film with a stable structure can be prepared at a lower temperature by alternately depositing the silicon alkene layer and the carbon guide layer, so that the excellent performance of the silicon alkene is basically maintained, and the selection range of a substrate for growing the silicon alkene can be widened.

In some examples of the embodiment, in the step of alternately depositing the silicon alkene layer and the carbon guide layer, the thickness of each silicon alkene layer can be controlled to be 1nm to 10nm. Alternatively, the thickness of each silylene layer can be controlled to be 1nm to 5nm. Further alternatively, the thickness of each silylene layer can be controlled to be 1nm to 3nm. The thickness of the silicon alkene layer is controlled to be thin, so that the completeness of a two-position layered structure of the silicon alkene layer is kept, a part of the silicon alkene layer is prevented from being converted into a crystalline silicon film, and the performances of the silicon alkene composite film in all aspects are guaranteed.

In some examples of the embodiment, in the step of alternately depositing the silicon alkene layer and the carbon guide layer, the thickness of each carbon guide layer can be controlled to be 1nm to 10nm. Alternatively, the thickness of each carbon guide layer can be controlled to be 1nm to 5nm. Further alternatively, the thickness of each carbon guide layer can be controlled to be 1nm to 3nm. Since the carbon guiding layer mainly serves as a growth substrate and a support for the silicon alkene layer, the thickness of the carbon guiding layer is not too thick, otherwise the performance of the silicon alkene layer is excessive.

In some examples of the embodiment, in the step of alternately depositing the silicon alkene layer and the carbon guiding layer, the total thickness of all the silicon alkene layers and the carbon guiding layers can be controlled to be 500nm to 5 μm. Alternatively, the total thickness of the silicon alkene layer and the carbon guiding layer can be controlled to be 500nm to 2 μm.

In the embodiment, the carbon guide layer is used as a growth substrate of the silicon alkene layer and fixes the silicon alkene layer, so that the whole thickness of the prepared silicon alkene composite film can be thicker and even can reach the thickness of a micron order.

In some examples of the embodiment, in the step of depositing the silicon alkene layer, the deposition power of the magnetron sputtering is 300W to 500W.

In some examples of the embodiment, in the step of depositing the carbon guide layer, the deposition power of the magnetron sputtering is 300w to 500w.

In some examples of this embodiment, in repeating the step of preparing the silylene layer a plurality of times and the step of preparing the carbon guiding layer a plurality of times, the layer prepared last is the silylene layer.

In some examples of this embodiment, the carbon base layers are provided on both surfaces of the substrate opposite to each other, and in the repeating the step of preparing the silylene layer a plurality of times and the repeating the step of preparing the carbon guide layer a plurality of times, the step of depositing the silylene layer may be performed simultaneously on both sides of the substrate on which the carbon base layer films are provided, and the step of depositing the carbon guide layer may be performed simultaneously on both sides of the substrate on which the carbon base layers are provided. For example, a layer of silylene is deposited simultaneously on the carbon base layers on both sides of the substrate, a layer of carbon guide layer is deposited simultaneously on the silylene layers on both sides of the substrate, and the above deposition steps are repeated to deposit both the silylene layer and the carbon guide layer on both sides of the substrate. Through deposit silicon alkene layer and carbon guide layer simultaneously in substrate both sides, not only can further improve preparation efficiency, can also improve the load capacity of silicon alkene layer on the substrate, make it more be fit for as the electrode.

In order that the invention may be more readily understood and put into practical effect, reference is also made to the following more particular examples.

In one embodiment of the disclosure, the method for preparing the silicon-alkene composite film comprises steps S1-S4.

Referring to fig. 1, in step S1, a carbon substrate layer 110 is provided.

The carbon substrate 110 is disposed on the substrate 100, and the substrate 100 may be a copper sheet. The carbon base layer 110 is prepared as follows.

Firstly, magnetron sputtering a layer of metal copper as a catalyst layer on two opposite surfaces of a substrate 100, controlling the temperature of a deposition chamber to be room temperature, bombarding a graphite target, and sputtering carbon atoms on two opposite surfaces of the substrate to form carbon substrate layers 110. The thickness of the carbon base layer 110 in this step can be controlled to be 100nm or less.

Referring to fig. 2, in step S2, a silicon alkene layer 120 is prepared on the carbon substrate layer 110.

The method for preparing the silylene layer 120 is magnetron sputtering, and the target material used for preparing the silylene layer 120 by magnetron sputtering is a silicon target.

Wherein, the temperature of the deposition chamber can be controlled to be 20-100 ℃ when the silylene layer 120 is deposited. Alternatively, the temperature in the deposition chamber may be controlled to room temperature.

When the silicon alkene layer 120 is deposited, the deposition power of magnetron sputtering can be controlled to be 300W to 500W, so that the growth rate of the silicon alkene layer 120 is more suitable.

Wherein, the thickness of the deposited silicon alkene layer 120 is controlled to be 1nm to 10nm. In this embodiment, the thickness of the deposited silylene layer 120 can be controlled to be 1nm. The thickness of the silylene layer 120 can be controlled by setting a specific deposition time.

Wherein, in depositing the silylene layer 120, the silylene layer 120 may be deposited simultaneously on the carbon base layers of the two opposite sides of the substrate 100. Specifically, silicon targets may be disposed on both opposite sides of the substrate 100 and bombarded simultaneously on the silicon targets on the opposite sides to deposit the silylene layer 120 simultaneously on both opposite sides of the substrate 100.

Referring to fig. 3, in step S3, a carbon guide layer 130 is deposited on the silylene layer 120.

The carbon guide layer 130 is deposited by magnetron sputtering, and the target material used in the magnetron sputtering of the carbon guide layer 130 is graphite.

Wherein the step of depositing the carbon guide layer 130 is continued in a deposition chamber where the silylene layer 120 is deposited. Specifically, a graphite target may be provided in the deposition chamber at the same time, and the graphite target may be bombarded while the carbon guide layer 130 is deposited.

Wherein the carbon guide layer 130 may be deposited simultaneously on the silylene layer 120 on opposite sides of the substrate when the carbon guide layer 130 is deposited. Specifically, graphite targets may be simultaneously disposed on opposite sides of the substrate and simultaneously bombarded against the graphite targets on opposite sides to simultaneously form the carbon guide layers 130 on opposite sides of the substrate.

In this step, some or all of the process parameters when depositing the carbon guiding layer 130 may be the same as some or all of the process parameters when depositing the silylene layer 120. For example, the temperature of the deposition chamber may be controlled to be 20 ℃ to 100 ℃ when the carbon guiding layer 130 is deposited. Alternatively, the temperature in the deposition chamber may be controlled to room temperature. For another example, the deposition power of magnetron sputtering may be controlled to be 300w to 500w when depositing the carbon guide layer 130. For another example, the thickness of the deposited carbon guide layer 130 is controlled to be 1nm to 10nm. In this embodiment, the thickness of the deposited carbon guide layer 130 may be controlled to be 1nm. The manner of controlling the thickness of the carbon guide layer 130 may be controlled by setting a specific deposition time. Since the silicon alkene layer 120 and the carbon guiding layer 130 need to be deposited alternately frequently in the subsequent deposition process, the process parameters of the two layers are controlled to be substantially the same, which is beneficial to more stable and efficient deposition.

Referring to fig. 4, step S4 is repeated to prepare the silylene layer 120 and the carbon guiding layer 130.

Wherein the silicon ene layer 120 and the carbon guiding layer 130 are alternately deposited in repeating the steps of preparing the silicon ene layer 120 and the carbon guiding layer 130. Specifically, the step S2 may be repeated once on the prepared carbon guiding layer 130 to deposit the silylene layer 120, the step S3 may be repeated once on the prepared silylene layer 120 to deposit the carbon guiding layer 130, and so on, to alternately deposit the silylene layer 120 and the carbon guiding layer 130. It is understood that although only three silicon alkene layers 120 and two carbon guiding layers 130 are shown in fig. 4, by repeating steps S2 and S3, much more silicon alkene layers 120 and carbon guiding layers 130 than shown in fig. 4 can be prepared.

In this embodiment, the conditions for each preparation of the silylene layer 120 may be the same, which results in the multilayer silylene layer 120 being the same or substantially the same. The conditions may also be the same each time the carbon guide layer 130 is prepared, which may result in the multilayer carbon guide layer 130 being the same or substantially the same from one layer to the next. Of course, in other embodiments, the conditions for each preparation of the silicon alkene layer 120 may be different, and the conditions for each preparation of the carbon guiding layer 130 may be different.

In this step, the step of depositing the silylene layer 120 and the step of depositing the carbon guide layer 130 may be repeated 500 times, respectively, to form a silylene composite film having a thickness of 1 μm in total.

In this step, after the last carbon guiding layer 130 is deposited, a layer of the silicon alkene layer 120 may be deposited, so that the topmost layer is the silicon alkene layer 120. Only schematic structural diagrams of two silicon alkene layers 120 and two carbon guiding layers 130 are shown in fig. 4, respectively. It is understood that the subsequently deposited multiple layers of the silicon-ene layer 120 and the carbon guiding layer 130 are stacked in a similar configuration.

Referring to fig. 4, the present disclosure also provides a method for preparing a silicon-ene composite film, which includes: the carbon substrate layer, the multilayer silylene layer 120 and the multilayer carbon guide layer 130 are alternately stacked and arranged on the carbon substrate layer, wherein the silylene layer 120 and the carbon guide layer 130 are alternately stacked and arranged on the carbon substrate layer.

Wherein, the silicon alkene layer 120 and the carbon guiding layer 130 are alternately prepared on the carbon base layer by means of magnetron sputtering.

In some examples of this embodiment, the silicon alkene layer 120 and the carbon guiding layer 130 are both multi-layered.

In some examples of this embodiment, the thickness of the silicon alkene layer 120 is 1nm to 10nm. Alternatively, the thickness of the silylene layer 120 is 1nm to 5nm. Further optionally, the thickness of the silylene layer 120 is 1nm to 3nm.

In some examples of this embodiment, the thickness of the carbon guide layer 130 is 1nm to 10nm. Alternatively, the thickness of the carbon guide layer 130 is 1nm to 5nm. Further optionally, the thickness of the carbon guide layer 130 is 1nm to 3nm.

In some examples of this embodiment, the total thickness of the silicon alkene layer 120 and the carbon guiding layer 130 can be controlled to be 500nm to 5 μm. Alternatively, the total thickness of the silicon alkene layer 120 and the carbon guiding layer 130 can be controlled to be 500nm to 2 μm.

An embodiment of the present disclosure also provides an electrode including a current collector and a silylene composite film. The silicon-alkene composite film is arranged on the current collector, and is prepared by the preparation method of the embodiment, or is provided by the embodiment. Preferably, the current collector is a substrate used in the preparation of the silicon-alkene composite film.

An embodiment of the present disclosure further provides a lithium ion battery, where the lithium ion battery includes a positive electrode, a negative electrode, and an electrolyte, the positive electrode and the negative electrode are oppositely disposed, the electrolyte is disposed between the positive electrode and the negative electrode, and the negative electrode is the electrode in the above embodiment.

The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above examples only show some embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims

1. The preparation method of the silicon-alkene composite film is characterized by comprising the following steps:

providing a carbon substrate layer, wherein the carbon substrate layer is graphene;

the step of preparing the silicon alkene layer comprises: sputtering silicon atoms by means of magnetron sputtering to form the silylene layer, the step of preparing the carbon guide layer comprising: sputtering carbon atoms by means of magnetron sputtering to form the carbon guide layer;

in the step of preparing the silicon alkene layer, the ambient temperature in the deposition chamber is controlled to be 20-100 ℃.

2. The method of claim 1, wherein the step of providing a carbon substrate layer comprises: preparing a catalytic layer on a substrate, and sputtering carbon atoms on the catalytic layer by means of magnetron sputtering to form the carbon substrate layer.

3. The method of claim 1, wherein the step of preparing the silicon layer and the step of preparing the carbon guiding layer are performed in a same deposition chamber.

4. The method of claim 3, wherein the ambient temperature in the deposition chamber is controlled to be 20 ℃ to 100 ℃ in the step of preparing the carbon guide layer.

5. The method for producing the silicon-ene composite film according to any one of claims 1 to 4, wherein in the step of producing the silicon-ene layer, the thickness of the silicon-ene layer is controlled to be 1nm to 10nm; and/or the presence of a gas in the gas,

6. The method for preparing the silicon-olefin composite film according to any one of claims 1 to 4, wherein the number of prepared silicon-olefin layers is not less than 50, and the number of prepared carbon guide layers is not less than 50.

7. The method for preparing the silicon-ene composite film according to any one of claims 1 to 4, wherein in the step of alternately depositing the silicon-ene layer and the carbon guiding layer, the total thickness of the deposited silicon-ene layer and the carbon guiding layer is controlled to be 500nm to 5 μm.

8. A composite film of a silicon-containing olefin, comprising: the carbon substrate comprises a carbon substrate layer, a plurality of silicon alkene layers and a plurality of carbon guide layers, wherein the silicon alkene layers and the carbon guide layers are alternately stacked and arranged on the carbon substrate layer; the carbon substrate layer is made of graphene, the silicon alkene layer and the carbon guide layer are both prepared in a magnetron sputtering mode, and in the step of preparing the silicon alkene layer, the ambient temperature in the deposition chamber is controlled to be 20-100 ℃.

9. An electrode, characterized by comprising a current collector and a silicon-ene composite film, wherein the silicon-ene composite film is arranged on the current collector, and the silicon-ene composite film is prepared by the preparation method of the silicon-ene composite film according to any one of claims 1 to 7, or the silicon-ene composite film is the silicon-ene composite film according to claim 8.

10. A lithium ion battery comprising a positive electrode, a negative electrode and an electrolyte, wherein the positive electrode and the negative electrode are oppositely arranged, the electrolyte is arranged between the positive electrode and the negative electrode, and the negative electrode is the electrode according to claim 9.