CN115528131A - Electroplating method suitable for P-type PERC battery piece - Google Patents

Electroplating method suitable for P-type PERC battery piece Download PDF

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Publication number
CN115528131A
CN115528131A CN202110704504.1A CN202110704504A CN115528131A CN 115528131 A CN115528131 A CN 115528131A CN 202110704504 A CN202110704504 A CN 202110704504A CN 115528131 A CN115528131 A CN 115528131A
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metal layer
electroplating
blue
sintering
battery piece
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马敏杰
从海泉
马擎天
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Huansheng Photovoltaic Jiangsu Co Ltd
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Huansheng Photovoltaic Jiangsu Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

The invention provides an electroplating method suitable for a P-type PERC battery piece, which comprises the following steps: printing aluminum paste on the back surface of the blue diaphragm and sintering; cleaning the sintered blue membrane by using HCL, and then cleaning by using water; plating a first metal layer on the front surface and the back surface of the cleaned blue diaphragm, plating a second metal layer on the surface of the first metal layer, and plating a third metal layer on the surface of the second metal layer to obtain an electroplating sample; and carrying out oxygen-free sintering on the electroplating sample to obtain the P-type PERC cell. The invention has the advantages that the traditional nickel electroplating is replaced by the chemical nickel plating method, so that the growth uniformity of nickel on the blue diaphragm can be improved; the back surface of the blue diaphragm is printed with aluminum paste and sintered, so that a BSF layer can be formed on the back surface of the blue diaphragm, and the open-circuit voltage and the efficiency of the whole battery piece are improved; and the HCL is used for selectively corroding redundant aluminum paste, and meanwhile, the silicon nitride and the BSF layer formed by sintering cannot be damaged, so that the open-circuit voltage and the efficiency of the cell are improved.

Description

Electroplating method suitable for P-type PERC battery piece
Technical Field
The invention belongs to the technical field of manufacturing of crystalline silicon solar cells, and particularly relates to an electroplating method suitable for a P-type PERC cell.
Background
At present, the front electrode of the traditional P-type PERC cell is prepared by adopting a photoinduction electroplating (LIP) method, and the conduction of the front surface and the back surface of the cell is ensured because the photoinduction technology needs the reaction of a photon-generated carrier and cations in electroplating solution; therefore, before photo-induction, an aluminum back surface field needs to be printed on the back surface of the cell and sintered, so that the back surface of the cell can be conductive.
The other method is a chemical nickel plating method, firstly, chemical plating solution is used for directly plating a layer of nickel with the thickness of 40nm on the front side and the back side of the battery piece, then, copper and silver are respectively plated on the nickel seed layer by a conventional electroplating method, and because the chemical nickel plating can only be carried out by double-side electroplating, the back side of the P-type battery piece is formed by nickel-silicon alloy instead of the traditional aluminum-silicon alloy, the back side is lack of a P + layer, and the open-circuit voltage and the efficiency of the PERC battery piece are influenced.
Disclosure of Invention
The invention aims to provide an electroplating method suitable for a P-type PERC battery piece, and effectively solves the problem that in the prior art, due to the fact that chemical nickel plating can only be carried out on double sides, nickel-silicon alloy is formed on the back of the P-type PERC battery piece instead of traditional aluminum-silicon alloy, a P + layer is lacked on the back, and the open-circuit voltage and the efficiency of the PERC battery piece are influenced.
In order to solve the technical problems, the invention adopts the technical scheme that: an electroplating method suitable for a P-type PERC battery piece comprises the following steps:
printing aluminum paste on the back surface of the blue diaphragm and sintering;
cleaning the sintered blue membrane by using HCL, and then cleaning by using clear water;
plating a first metal layer on the front surface and the back surface of the cleaned blue diaphragm, plating a second metal layer on the surface of the first metal layer, and plating a third metal layer on the surface of the second metal layer to obtain an electroplating sample;
and carrying out oxygen-free sintering on the electroplating sample to obtain the P-type PERC cell.
Preferably, in the step of sintering after printing the aluminum paste on the back surface of the blue diaphragm, the sintering temperature is 700-800 ℃, and the sintering time is 25-35s.
Preferably, the blue membrane is washed with 6-10% HCl for 3-8min, and then the blue membrane is washed by immersing in clean water for 3-8min.
Preferably, the first metal layer is a Ni metal layer with a thickness of 40-100nm.
Preferably, the second metal layer is a Cu metal layer and has a thickness of 10-13 μm.
Preferably, the third metal layer is an Ag metal layer and has a thickness of 0.5-2 μm.
More preferably, the first metal layer is plated to the front surface and the back surface of the blue diaphragm by using an electroless plating method.
More preferably, the second metal layer is plated to the surface of the first metal layer by using an electroplating method.
More preferably, the third metal layer is plated to the surface of the second metal layer by using an electroplating method.
Preferably, in the step of performing oxygen-free sintering on the electroplating sample, the electroplating sample is sintered under the protection of inert gas, the sintering temperature is 350-400 ℃, and the sintering time is 30-60s.
By adopting the technical scheme, the nickel can uniformly grow on the surface of the blue diaphragm by adopting a chemical nickel plating process; before the nickel melting process, firstly, the back of the blue diaphragm is printed with aluminum paste and sintered to form aluminum-silicon alloy, namely a BSF layer, and then the BSF layer is cleaned by using HCL, the HCL can react with aluminum and cannot damage silicon nitride on the front surface and the back surface of the blue diaphragm, meanwhile, the HCL only can corrode the aluminum and cannot damage the aluminum-silicon alloy formed by sintering, so that the BSF layer of the blue diaphragm is reserved, the open-circuit voltage of the whole P-type PERC is improved, the problem that the nickel-silicon alloy is formed on the back of the battery plate in the prior art but not the traditional aluminum-silicon alloy is solved, and therefore, a P + layer is lacked on the back, and the open-circuit voltage of the PERC battery plate is influenced.
Drawings
FIG. 1 is a process flow chart of an electroplating method suitable for a P-type PERC cell piece according to an embodiment of the invention
Detailed Description
The invention is further illustrated by the following examples and figures:
in the description of the embodiments of the present invention, it should be understood that the terms "front surface", "back surface", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
As shown in fig. 1, a process flow chart of an electroplating method suitable for a P-type PERC cell, an electroplating method suitable for a P-type PERC cell includes:
s1: printing aluminum paste on the back surface of the blue diaphragm and sintering, wherein the sintering temperature is 700-800 ℃, the sintering time is 25-35s, aluminum-silicon alloy, namely a BSF layer, is formed on the surfaces of the sintered aluminum paste and the blue diaphragm, and the subsequent chemical plating or electroplating steps are all carried out on the BSF layer.
S2: cleaning the sintered blue membrane with HCL, cleaning the blue membrane cleaned with HCL with clear water, cleaning, wherein,
the concentration of HCL is 6-10%, the cleaning time is 3-8min, and impurities and redundant aluminum paste are sufficiently removed.
And (3) using silicon oxide on the front surface of the blue diaphragm, which can be corroded by other acids except hydrochloric acid, to destroy the passivation layer on the front surface, so that the battery piece cannot be used, so that the HCL is selected to clean the blue diaphragm. Use HCL to wash the blue diaphragm after the sintering can get rid of the remaining impurity after the aluminium thick liquid sintering, and HCL can react with aluminium, get rid of unnecessary aluminium thick liquid equally, and can not harm the silicon nitride of blue diaphragm front surface and back surface, also can not destroy the aluminium-silicon alloy that has sintered and formed, the BSF layer of blue diaphragm has been remain, the BSF layer can promote the opening of battery piece and efficiency, solve because present chemical nickel plating can only carry out two-sided electroplating, it is nickel-silicon alloy to lead to the back formation of P type battery piece, but not traditional aluminium-silicon alloy, consequently the back lacks P + layer, influenced the opening of PERC battery piece and the problem of efficiency.
And (3) carrying out immersion cleaning on the blue membrane after the HCL is cleaned by using clean water, wherein the cleaning time is 3-8min, fully cleaning the HCL on the surface and impurities generated by the reaction of aluminum and the HCL, and cleaning the blue membrane.
S3: plating a first metal layer on the front surface and the back surface of the blue diaphragm cleaned by clear water, plating a second metal layer on the surface of the first metal layer, and plating a third metal layer on the surface of the second metal layer to obtain an electroplated sample, wherein,
the first metal layer is a Ni metal layer, the thickness of the first metal layer is 40-100nm, and the first metal layer is plated on the front surface and the back surface of the blue diaphragm by adopting a chemical plating method; the first metal layer can only be selected from Ni metal, and the phenomenon of metal superposition is easily generated by using other metals;
the second metal layer is a Cu metal layer, the thickness of the second metal layer is 10-13 mu m, and the second metal layer is plated on the surface of the first metal layer by adopting an electroplating method; the second metal layer is made of common metal, and Cu is a metal layer which is more common in the field;
the third metal layer is an Ag metal layer with the thickness of 0.5-2 mu m and is plated on the surface of the second metal layer by adopting an electroplating method; the third metal layer can only be made of Ag metal, and other metals with proper properties cannot be welded due to the requirement of welding;
and the first metal layer, the second metal layer and the third metal layer are subjected to chemical plating or electroplating on the front surface and the back surface of the blue film to obtain an electroplating sample.
S4: and carrying out anaerobic sintering on the electroplating sample, wherein the anaerobic sintering needs inert gas for protection, the inert gas can be selected from other gases such as argon, nitrogen and the like, the sintering temperature is 350-400 ℃, the sintering time is 30-60s, and finally the P-type PERC cell is obtained.
The traditional nickel electroplating method is replaced by the chemical nickel plating method, so that the growth uniformity of nickel on the blue film can be improved; the aluminum paste is printed on the back surface of the blue diaphragm and sintered, so that a BSF layer can be formed on the back surface of the blue diaphragm, and the voltage-on and efficiency of the whole battery piece are improved; and the HCL is used for selectively corroding redundant aluminum paste, and meanwhile, the silicon nitride and the BSF layer formed by sintering cannot be damaged, so that the phenomenon that the open voltage and the efficiency of the battery piece are reduced due to the formation of nickel-silicon alloy on the surfaces of the nickel and the blue film piece is prevented.
Several specific examples are listed below:
example 1
S1: printing aluminum paste on the back surface of the blue diaphragm and sintering at 700 ℃ for 35s, forming aluminum-silicon alloy, namely a BSF layer, on the surfaces of the sintered aluminum paste and the blue diaphragm, and performing subsequent chemical plating or electroplating on the BSF layer.
S2: cleaning the sintered blue membrane with HCL, cleaning the blue membrane cleaned with HCL with clear water, cleaning, wherein,
the concentration of HCL is 6%, the cleaning time is 8min, HCL can react with aluminum, redundant aluminum paste and impurities can be fully removed, silicon nitride on the front surface and the back surface of the blue membrane can not be damaged, aluminum-silicon alloy formed by sintering can not be damaged, and a BSF layer of the blue membrane is reserved.
And (3) carrying out immersion cleaning on the blue membrane after the HCL is cleaned by using clear water, wherein the cleaning time is 3min, fully cleaning the HCL on the surface and impurities generated by the reaction of aluminum and the HCL, and cleaning the blue membrane.
S3: plating a first metal layer on the front surface and the back surface of the blue diaphragm cleaned by clear water, plating a second metal layer on the surface of the first metal layer, and plating a third metal layer on the surface of the second metal layer to obtain an electroplating sample, wherein,
the first metal layer is a Ni metal layer, the thickness of the first metal layer is 40nm, and the first metal layer is plated on the front surface and the back surface of the blue diaphragm by adopting a chemical plating method;
the second metal layer is a Cu metal layer, the thickness of the second metal layer is 10 mu m, and the second metal layer is plated on the surface of the first metal layer by adopting an electroplating method;
the third metal layer is an Ag metal layer with the thickness of 0.5 mu m and is plated on the surface of the second metal layer by adopting an electroplating method;
and the first metal layer, the second metal layer and the third metal layer are subjected to chemical plating or electroplating on the front surface and the back surface of the blue film to obtain an electroplating sample.
S4: and carrying out anaerobic sintering on the electroplating sample, wherein the anaerobic sintering needs inert gas for protection, the inert gas is argon, the sintering temperature is 350 ℃, and the sintering time is 60s, so that the P-type PERC cell is finally obtained.
Example 2
S1: printing aluminum paste on the back surface of the blue diaphragm and sintering, wherein the sintering temperature is 800 ℃, the sintering time is 25s, aluminum-silicon alloy, namely a BSF layer, is formed on the surfaces of the sintered aluminum paste and the blue diaphragm, and the subsequent chemical plating or electroplating steps are carried out on the BSF layer.
S2: cleaning the sintered blue membrane with HCL, cleaning the blue membrane cleaned with HCL with clear water, cleaning, wherein,
cleaning the sintered blue membrane with HCL, cleaning the blue membrane cleaned with HCL with clear water, cleaning, wherein,
the concentration of HCL is 10%, the cleaning time is 3min, the HCL can react with aluminum, redundant aluminum paste and impurities can be fully removed, silicon nitride on the front surface and the back surface of the blue membrane can not be damaged, aluminum-silicon alloy formed by sintering can not be damaged, and a BSF layer of the blue membrane is reserved.
And (3) carrying out immersion cleaning on the blue membrane after the HCL is cleaned by using clean water, wherein the cleaning time is 8min, fully cleaning the HCL on the surface and impurities generated by the reaction of aluminum and the HCL, and cleaning the blue membrane.
S3: plating a first metal layer on the front surface and the back surface of the blue diaphragm cleaned by clear water, plating a second metal layer on the surface of the first metal layer, and plating a third metal layer on the surface of the second metal layer to obtain an electroplated sample, wherein,
the first metal layer is a Ni metal layer, the thickness of the first metal layer is 100nm, and the first metal layer is plated on the front surface and the back surface of the blue diaphragm by adopting a chemical plating method;
the second metal layer is a Cu metal layer, the thickness of the second metal layer is 13 mu m, and the second metal layer is plated on the surface of the first metal layer by adopting an electroplating method;
the third metal layer is an Ag metal layer with the thickness of 2 mu m and is plated on the surface of the second metal layer by adopting an electroplating method;
and the first metal layer, the second metal layer and the third metal layer are subjected to chemical plating or electroplating on the front surface and the back surface of the blue film to obtain an electroplating sample.
S4: and carrying out anaerobic sintering on the electroplating sample, wherein the anaerobic sintering needs protection of inert gas, the inert gas is selected from nitrogen, the sintering temperature is 400 ℃, and the sintering time is 30s, so that the P-type PERC cell is finally obtained.
Example 3
S1: printing aluminum paste on the back surface of the blue diaphragm and sintering, wherein the sintering temperature is 750 ℃, the sintering time is 30s, aluminum-silicon alloy, namely a BSF layer, is formed on the surfaces of the sintered aluminum paste and the blue diaphragm, and the subsequent chemical plating or electroplating steps are carried out on the BSF layer.
S2: cleaning the sintered blue membrane by using HCL, cleaning the blue membrane cleaned by using HCL by using clear water, and cleaning, wherein,
cleaning the sintered blue membrane with HCL, cleaning the blue membrane cleaned with HCL with clear water, cleaning, wherein,
the concentration of HCL is 8%, the cleaning time is 5min, HCL can react with aluminum, redundant aluminum paste and impurities can be fully removed, silicon nitride on the front surface and the back surface of the blue membrane can not be damaged, aluminum-silicon alloy formed by sintering can not be damaged, and a BSF layer of the blue membrane is reserved.
And (3) carrying out immersion cleaning on the blue membrane after the HCL is cleaned by using clean water, wherein the cleaning time is 5min, fully cleaning the HCL on the surface and impurities generated by the reaction of aluminum and the HCL, and cleaning the blue membrane.
S3: plating a first metal layer on the front surface and the back surface of the blue diaphragm cleaned by clear water, plating a second metal layer on the surface of the first metal layer, and plating a third metal layer on the surface of the second metal layer to obtain an electroplated sample, wherein,
the first metal layer is an Ni metal layer with the thickness of 70nm and is plated on the front surface and the back surface of the blue diaphragm by adopting a chemical plating method;
the second metal layer is a Cu metal layer, has the thickness of 12 mu m, and is plated on the surface of the first metal layer by adopting an electroplating method;
the third metal layer is an Ag metal layer with the thickness of 1 mu m and is plated on the surface of the second metal layer by adopting an electroplating method;
and the first metal layer, the second metal layer and the third metal layer are subjected to chemical plating or electroplating on the front surface and the back surface of the blue film to obtain an electroplating sample.
S4: and carrying out anaerobic sintering on the electroplating sample, wherein the anaerobic sintering needs inert gas for protection, the inert gas is selected from nitrogen, the sintering temperature is 375 ℃, and the sintering time is 45s, so that the P-type PERC battery piece is finally obtained.
The embodiments of the present invention have been described in detail, but the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.

Claims (10)

1. An electroplating method suitable for a P-type PERC battery piece comprises the following steps:
printing aluminum paste on the back surface of the blue film sheet and sintering;
cleaning the sintered blue membrane by using HCL, and then cleaning by using water;
plating a first metal layer on the front surface and the back surface of the cleaned blue diaphragm, plating a second metal layer on the surface of the first metal layer, and plating a third metal layer on the surface of the second metal layer to obtain an electroplating sample;
and carrying out oxygen-free sintering on the electroplating sample to obtain the P-type PERC cell.
2. The electroplating method suitable for the P-type PERC battery piece as claimed in claim 1, wherein: and in the step of sintering after printing the aluminum paste on the back surface of the blue film sheet, the sintering temperature is 700-800 ℃, and the sintering time is 25-35s.
3. The electroplating method suitable for the P-type PERC battery piece as claimed in claim 1, wherein: washing the blue membrane with 6-10% HCL for 3-8min, and then soaking the blue membrane in clear water for 3-8min.
4. The electroplating method suitable for the P-type PERC battery piece as claimed in claim 1, wherein: the first metal layer is a Ni metal layer, and the thickness of the first metal layer is 40-100nm.
5. The electroplating method for the P-type PERC battery piece as claimed in claim 1 or 4, wherein: the second metal layer is a Cu metal layer, and the thickness of the second metal layer is 10-13 mu m.
6. The electroplating method suitable for the P-type PERC battery piece as claimed in claim 1, 4 or 5, wherein: the third metal layer is an Ag metal layer, and the thickness of the third metal layer is 0.5-2 mu m.
7. The electroplating method suitable for the P-type PERC battery piece as claimed in any one of claims 1 and 4-6, wherein: the first metal layer is plated to the front surface and the back surface of the blue membrane by adopting an electroless plating method.
8. The electroplating method suitable for the P-type PERC battery piece as claimed in any one of claims 1 and 4-7, wherein: and the second metal layer is plated to the surface of the first metal layer by adopting an electroplating method.
9. The electroplating method suitable for the P-type PERC battery piece as claimed in any one of claims 1 and 4-8, wherein: and the third metal layer is plated to the surface of the second metal layer by adopting an electroplating method.
10. The electroplating method suitable for the P-type PERC battery piece as claimed in claim 1, wherein: and in the step of carrying out oxygen-free sintering on the electroplating sample, sintering the electroplating sample under the protection of inert gas, wherein the sintering temperature is 350-400 ℃, and the sintering time is 30-60s.
CN202110704504.1A 2021-06-24 2021-06-24 Electroplating method suitable for P-type PERC battery piece Pending CN115528131A (en)

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