CN115513316A - 一种双轴张应变锗硅量子阱调制器、集成光电子器件 - Google Patents
一种双轴张应变锗硅量子阱调制器、集成光电子器件 Download PDFInfo
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 230000005693 optoelectronics Effects 0.000 title claims description 12
- 229910000676 Si alloy Inorganic materials 0.000 claims abstract description 32
- 230000004888 barrier function Effects 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 27
- 230000008878 coupling Effects 0.000 claims abstract description 23
- 238000010168 coupling process Methods 0.000 claims abstract description 23
- 238000005859 coupling reaction Methods 0.000 claims abstract description 23
- 230000010287 polarization Effects 0.000 claims abstract description 21
- 229910045601 alloy Inorganic materials 0.000 claims description 30
- 239000000956 alloy Substances 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 238000002955 isolation Methods 0.000 claims description 17
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 238000010521 absorption reaction Methods 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 5
- 125000006850 spacer group Chemical group 0.000 claims 2
- 230000003287 optical effect Effects 0.000 abstract description 24
- 230000000694 effects Effects 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 239000013307 optical fiber Substances 0.000 description 14
- 239000000377 silicon dioxide Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000005387 chalcogenide glass Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- -1 for example Chemical compound 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002042 Silver nanowire Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001824 photoionisation detection Methods 0.000 description 1
- 239000013308 plastic optical fiber Substances 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
本发明涉及一种双轴张应变锗硅量子阱调制器,其材料外延结构由下往上依次包括:P型硅衬底、P型锗硅合金缓冲层、本征锗硅合金下隔离层、本征锗硅合金耦合量子阱层、本征锗硅合金上隔离层和N型锗硅合金盖层,所述本征锗硅合金耦合量子阱层包括多个对称耦合量子阱,每个对称耦合量子阱包括两个相同宽度的量子阱、一个中间薄壁垒和两个侧边壁垒;相邻两个对称耦合量子阱共用一个侧边壁垒区,且中间薄壁垒与侧边壁垒的锗硅合金组分相同。本发明公开了一种双轴张应变锗硅量子阱调制器,该调制器通过双轴张应变来调节实现预期的工作波段,同时对TE和TM偏振的光波具有相似的调制效果,实现偏振无关的光学调制。
Description
技术领域
本发明属于集成光电子器件技术领域,具体涉及一种双轴张应变锗硅量子阱调制器、集成光电子器件。
背景技术
随着光通信和光互联的迅速发展,光电集成回路在数据传输中扮演着越来越重要的角色。由于与成熟的CMOS技术相兼容,硅基光电子被认为是最具有前景的电子和光子器件的集成平台。高效紧凑的硅基光电子器件是实现大规模光电子集成***的前提,而一个兼容CMOS工艺、高性能低功耗的光学调制器对于光通信与光互联***来说是一个关键的器件。
目前硅基调制器主要是利用等离子体色散效应来实现光波的相位调制,然后再利用干涉结构来实现光强度的调制。根据电压改变载流子浓度的方式可以将硅基调制器分为:载流子注入式调制、载流子积累式调制、载流子耗尽式调制。载流子注入技术是获得载流子浓度变化最成熟的技术,其优势是整个波导的参数指标相对比较均匀,可以实现很高的调制效率。然而,这种类型调制器的主要问题是由于硅中少子存活时间较长导致其运作速度慢。另外相对较大的注入电流会导致较高的功耗,这同时也会导致温度升高,而硅中热光效应会导致折射率的增大,但载流子注入却会使折射率减小,因此最终就会导致调制效果减弱。载流子积累式和载流子耗尽式的调制速度不再受限于硅中少子的寿命,而是取决于器件的RC常数,因此其调制速率相对较高。但是此类型的调制器由于载流子变化区域与光场的重叠面积较小,因而调制效率较低,而且能耗也较高。另外由于干涉结构的存在,会使得整体的器件尺寸较大,不利于片上光电器件集成。
电磁波在自由空间中传播时,无TE或TM的说法,所以统称为TEM;而在波导中,电磁波一维受限,此时会在受限方向上产生模式分布,即MAXWELL方程组可以分解为两个独立的方程组,分别为TE和TM波。光的传播形态分类:根据传播方向上有无电场分量或磁场分量,可分为如下三类,任何光都可以这三种波的合成形式表示出来。TEM波:在传播方向上没有电场和磁场分量,称为横电磁波。TE波:在传播方向上有磁场分量但无电场分量,称为横电波。TM波:在传播方向上有电场分量而无磁场分量,称为横磁波。
中国专利文献CN109343237A提出了一种锗硅量子阱电致折射率调制器和集成光电子器件,该调制器具有小尺寸、低功耗、调制效率高等优点,但该器件的工作波长位于1460nm左右,且难以调整,这是由锗硅量子阱的能带结构决定的。目前光通信与光互联领域的主流工作波长在1550nm波长附近,因此很大程度上限制了该器件的实际应用范围。此外,该器件对于TE偏振和TM偏振的光波具有不同的调制效果,在一些偏振无关的应用场景中也限制了该器件的应用。
发明内容
为解决背景技术提到的现有锗硅量子阱调制器存在的问题,在本发明的第一方面提供了一种双轴张应变锗硅量子阱调制器,其材料外延结构由下往上依次包括:P型硅衬底、P型锗硅合金缓冲层、本征锗硅合金下隔离层、本征锗硅合金耦合量子阱层、本征锗硅合金上隔离层和N型锗硅合金盖层,所述本征锗硅合金耦合量子阱层包括多个对称耦合量子阱,每个对称耦合量子阱包括两个相同宽度的量子阱、一个中间薄壁垒和两个侧边壁垒;相邻两个对称耦合量子阱共用一个侧边壁垒区,且中间薄壁垒与侧边壁垒的锗硅合金组分相同。
在本发明的一些实施例中,所述本征锗硅合金耦合量子阱层由5~10个对称耦合量子阱组成。
在本发明的一些实施例中,所述两个侧边壁垒的材料组分为Si0.15Ge0.85。
进一步的,单个对称耦合量子阱的组成成分为:12nm Si0.15Ge0.85+6nmGe+2nmSi0.15Ge0.85+12nm Ge+12nm Si0.15Ge0.85,所述中间薄壁垒的宽度为2nm。
在本发明的一些实施例中,所述P型硅衬底的高度为500μm~600μm,所述P型锗硅合金缓冲层的高度为400nm~450nm,所述本征锗硅合金下隔离层的高度为50nm~80nm,所述本征锗硅合金耦合量子阱层的高度为200nm~400nm,所述本征锗硅合金上隔离层的高度为50nm~80nm,N型锗硅合金盖层的高度为150nm~200nm。
在本发明的一些实施例中,还包括双轴张应变结构,所述双轴张应变结构包括多个掏空结构,多个掏空结构呈十字形对称分布在锗硅波导的两侧。
进一步的,所述掏空结构自P型锗硅合金缓冲层向P型硅衬底延伸,其深度大于等于1μm。
优选的,所述双轴张应变锗硅量子阱调制器的TE偏振和TM偏振的第一个吸收带,相比于对应的无应变锗硅量子阱调制器均发生了红移,红移宽度大于50nm。
在本发明的一些实施例中,所述P型硅衬底以及所述P型锗硅合金缓冲层的宽度均为1.6μm~2.4μm;所述本征锗硅合金下隔离层、所述本征锗硅合金耦合量子阱层、所述本征锗硅合金上隔离层的宽度均为700nm~800nm。
本发明的第二方面,提供了一种集成光电子器件,所述集成光电子器件包括第一方面提供的双轴张应变锗硅量子阱调制器。
本发明的有益效果是:
本发明提供了一种双轴张应变锗硅量子阱调制器,其材料外延结构由下往上依次包括:P型硅衬底、P型锗硅合金缓冲层、本征锗硅合金下隔离层、本征锗硅合金耦合量子阱层、本征锗硅合金上隔离层和N型锗硅合金盖层,所述本征锗硅合金耦合量子阱层包括多个对称耦合量子阱,每个对称耦合量子阱包括两个相同宽度的量子阱、一个中间薄壁垒和两个侧边壁垒;相邻两个对称耦合量子阱共用一个侧边壁垒区,且中间薄壁垒与侧边壁垒的锗硅合金组分相同。可见,本发明中锗硅量子阱波导采用十字掏空结构来施加双轴张应变,相比于无应变的锗硅波导,双轴张应变使得其吸收谱红移,且应变量越大红移越明显。因此通过引入双轴张应变可以改变锗硅量子阱调制器的工作波长;本发明中双轴张应变锗硅量子阱调制器对TE偏振和TM偏振的光波具有相似的吸收效果,可以实现偏振无关的光学调制。
附图说明
图1为本发明的一些实施例中的双轴张应变锗硅量子阱调制器的外延材料结构示意图;
图2为本发明的一些实施例中的单个对称耦合量子阱的通用结构示意图;
图3为本发明的一些实施例中的双轴张应变锗硅量子阱调制器的三维结构示意图;
图4为本发明的一些实施例中的双轴张应变锗硅量子阱调制器的光吸收谱图。
附图标记
1、P型硅衬底,2、P型锗硅合金缓冲层,3、本征锗硅合金下隔离层,4、本征锗硅合金耦合量子阱层,5、本征锗硅合金上隔离层,6、N型锗硅合金盖层,7、N电极,8、P电极,9、二氧化硅绝缘覆盖层,10、掏空区域/掏空结构。
具体实施方式
以下结合附图对本发明的原理和特征进行描述,所举实例只用于解释本发明,并非用于限定本发明的范围。
参考图1,在本发明的第一方面,提供了一种双轴张应变锗硅量子阱调制器,其材料外延结构由下往上依次包括:P型硅衬底1、P型锗硅合金缓冲层2、本征锗硅合金下隔离层3、本征锗硅合金耦合量子阱层4、本征锗硅合金上隔离层5、N型锗硅合金盖层6,所述本征锗硅合金耦合量子阱层4由多个对称耦合量子阱组成,单个对称耦合量子阱由两个相同宽度的量子阱、一个中间薄壁垒、两个侧边壁垒组成,相邻两个对称耦合量子阱共用一个侧边壁垒区,中间薄壁垒与侧边壁垒的锗硅合金组分相同。
参考图2,其示出了单个对称耦合量子阱的通用结构。在本发明的一些实施例中,所述本征锗硅合金耦合量子阱层4由5~10个对称耦合量子阱组成。所述两个侧边壁垒的材料组分为Si0.15Ge0.85。进一步的,单个对称耦合量子阱的组成成分为:12nm Si0.15Ge0.85+6nmGe+2nm Si0.15Ge0.85+12nm Ge+12nmSi0.15Ge0.85,所述中间薄壁垒的宽度为2nm。
在本发明的一些实施例中,所述P型硅衬底1的高度为500μm~600μm,所述P型锗硅合金缓冲层2的高度为400nm~450nm,所述本征锗硅合金下隔离层3的高度为50nm~80nm,所述本征锗硅合金耦合量子阱层4的高度为200nm~400nm,所述本征锗硅合金上隔离层5的高度为50nm~80nm,N型锗硅合金盖层6的高度为150nm~200nm。所述P型硅衬底1、所述P型锗硅合金缓冲2层的宽度均为1.6μm~2.4μm;所述本征锗硅合金下隔离层3、所述本征锗硅合金耦合量子阱层4、所述本征锗硅合金上隔离层5的宽度均为700nm~800nm。
在本发明的一些实施例中,所述双轴张应变锗硅量子阱调制器还包括:二氧化硅绝缘覆盖层9、N电极7和P电极8。其中,N电极7置于6上;P电极8置于2上左侧(也可以是右侧)一端;二氧化硅绝缘覆盖层9置于除N电极7和P电极8以外的整个调制器上表面,N电极7和P电极8嵌于9中。上述二氧化硅绝缘覆盖层的厚度为0.3μm~1μm,用于对器件整体进行电学隔离,同时对器件表面起到保护作用。
可以理解,锗硅电吸收调制器是通过N电极7和P电极8来施加电压,从而控制对光信号的强度调制。当给锗硅调制器施加反向电压时,锗硅量子阱的吸收谱带边相比于无外加电压时会发生红移,从而对工作波长处的光吸收增强,达到强度调制的效果。
参考图1与图3,在本发明的一些实施例中,还包括双轴张应变结构,所述双轴张应变结构包括多个掏空结构10,多个掏空结构10呈十字形对称分布在锗硅波导的两侧。可以理解,上述波导是指由本征锗硅合金下隔离层3、本征锗硅合金耦合量子阱层4、本征锗硅合金上隔离层5、N型锗硅合金盖层6、二氧化硅绝缘覆盖层9、N电极7和P电极8构成的波导结构。上述十字形对称分布也可以理解为掏空结构关于波导结构的中心轴线对称,且每个掏空结构波导结构的中心轴线与夹角范围为-45°-45°;
具体地,如图3所示,所述双轴张应变锗硅量子阱调制器还包括十字掏空结构10,掏空区域对称分布于锗硅波导两侧。其刻蚀掏空深度到达硅衬底表面下方1μm左右,调制器波导中间的一段处于悬空状态。掏空区域的实现步骤为:先通过干法刻蚀到达硅衬底表面,再通过湿法腐蚀硅衬底1微米左右。可以理解,十字掏空结构10的深度不宜过大,过大则会导致十字掏空结构出现裂缝或坍塌;低于1μm这导致硅耦合量子阱的波长调节范围不显著,因此1μm左右作为最佳深度。
如图4所示,在引入双轴张应变后,锗硅量子阱电吸收调制器TE和TM偏振的第一个吸收带边相比于无应变时均发生了明显的红移,TE偏振吸收带边红移超过50nm,TM偏振吸收带边红移接近100nm。由此可以看出,双轴张应变也可以使得锗硅耦合量子阱的吸收谱发生红移,因此在恰当的双轴张应力作用下,锗硅耦合量子阱也可以实现特定的工作波长范围。此外,可以发现在引入0.5%的双轴张应变后,TE偏振和TM偏振的吸收带边都移动到了1475nm附近,且二者的差异非常小。不仅如此,TE偏振和TM偏振第一个吸收带边的吸收系数的差异减小了而且二者的吸收强度也都比无应变时有一定程度的增强。计算结果表明,在引入双轴张应变后,锗硅耦合量子阱的吸收谱在偏振方面的差异性显著减小,在特定大小的双轴张应变作用下,TE偏振和TM偏振的吸收带边可以完全重合,从而实现偏振无关的光吸收。在一些偏振无关性要求较高的场景中,双轴张应变锗硅耦合量子阱有着巨大的应用潜力。
应理解,可以在不偏离如在所附权利要求中阐述的精神和范围的情况下对元件的功能和布置做出各种改变。如在本文中且遍及该公开内容所使用的“发射器”或“分布式反馈(DFB)激光器”或“发光二极管”(LED)指代但不限于使用半导体发光结构(诸如半导体结、pn结、pin结、量子结构和量子点)的光学发射器类型。这些结构可以包括用来生成单波长或多波长以及其组合的单个或多个量子结构和结。该光学发射器可以包括但不限于半导体LED、半导体DFB激光器、半导体外部腔激光器(ECL)和固定波长发射器和可调发射器。这些光学发射器利用光学器件内电子和空穴的复合来生成光子,该光子的颜色(对应于光子的能量)由在其中生成它们的半导体的能量带隙来确定。
如在本文中且遍及该公开内容所使用的“半导体”指代但不限于具有落在导体和绝缘体的电导率值之间的电导率值的材料。该材料可以是元素材料或化合物材料。半导体可以包括但不限于元素、二元合金、三元合金和四元合金。使用一个或多个半导体形成的结构可以包括单种半导体材料、两种或更多种半导体材料、单种成分的半导体合金、两种或更多种分立成分的半导体合金、和从第一半导体合金至第二半导体合金渐变的半导体合金。该半导体可以是以下中的一种:未掺杂(本征)的、p型掺杂的、n型掺杂的、从一种类型的第一掺杂水平至相同类型的第二掺杂水平的掺杂渐变的、以及从一种类型的第一掺杂水平至不同类型的第二掺杂水平的掺杂渐变的。半导体可以包括但不限于III-V半导体,诸如铝(Al)、镓(Ga)、和铟(In)与氮(N)、磷(P)、砷(As)和锡(Sb)之间的那些,包括例如GaN、GaP、GaAs、InP、InAs、AlN和AlAs。如在本文中且遍及该公开内容所使用的“金属”指代但不限于由于易于失去外层电子而具有良好导电性和导热性的材料(元素、化合物和合金)。这可以包括但不限于金、铬、铝、银、铂、镍、铜、铑、钯、钨和此类材料的组合。
如在本文中且遍及该公开内容所使用的“电极”、“接触”、“轨道”、“迹线”或“电气端子”指代但不限于具有导电性的材料,其在光学上是不透明的。这包括由例如材料的薄膜、厚膜和镀膜形成的结构,该材料包括但不限于诸如金、铬、铝、银、铂、镍、铜、铑、钯、钨和此类材料的组合之类的金属。其他电极配置可以采用金属的组合,例如铬粘附层和金电极
如在本文中且遍及该公开内容所使用的“透明电极”、“透明接触”、“透明轨道”或“透明迹线”指代但不限于具有导电性但是在预定波长范围(通常是电磁光谱的可见区)内的光学透明性的材料。用于可见波长透明电极的共用材料是氧化铟锡(ITO,或掺锡氧化铟),其是氧化铟(III)和氧化锡(IV)的固溶体,通常按重量计90%:10%。然而,铟的高成本/受限供应以及层的脆弱性和缺乏灵活性可能意味着替代品是适当的。在这些之中的是碳纳米管导电涂层、薄金属膜或混合材料替代品(诸如覆盖有石墨烯的银纳米线)、固有导电聚合物(ICP)和导电聚合物(诸如聚苯胺和聚3,4-乙撑二氧噻吩聚磺苯乙烯(PEDOT:PSS));以及非晶透明导电氧化物,其包括例如掺铝、镓或铟的氧化锌(AZO、GZO或IZO)。如在本文中且遍及该公开内容所使用的“衬底”指代但不限于可以在其上生长半导体结构(诸如PID和本发明的实施例)的表面。这可以包括但不限于InP、GaAs、硅、硅上硅石、硅石、聚合物上硅石、玻璃、金属、陶瓷、聚合物或其组合。如在本文中且遍及该公开内容所使用的“光波导”、“介质波导”、或“波导”指代但不限于支持光学信号在预定波长范围内的传播的沿着传播方向不变的介质媒介或媒介的组合。
实施例2
本发明的第二方面,提供了一种集成光电子器件,所述集成光电子器件包括第一方面提供的双轴张应变锗硅量子阱调制器。例如,光波导可以是以下各项中的至少一种:包括至少芯和包覆部的隔离结构(例如光学纤维)、形成为载体的部分、形成在衬底内(例如平面光波电路)、光子集成器件、集成光学器件和光波导。这包括但不限于由压型玻璃、压型掺杂硅石、压型硫系玻璃、和聚合物形成的柔性光波导。这进一步包括但不限于在AlGaAs-GaAs材料***、InGaAsP-InP材料***、离子交换玻璃、离子交换铁电材料(例如质子交换LiNbO3)、掺杂铁电材料(例如钛掺杂铌酸锂)、绝缘体上硅石、硅上硅石、掺杂硅、离子注入硅、硅上聚合物、硅上氮氧化硅、硅上聚合物、绝缘体上硅(SOI)和聚合物上聚合物内形成的光波导。
如在本文中且遍及该公开内容所使用的“光学纤维”指代传送在预范围内的光学信号的柔性光波导。这包括但不限于阶跃折射率光学纤维、渐变折射率光学纤维、硅石光学纤维、硫系玻璃光学纤维和聚合物光学纤维。这样的光学纤维可以是支持多个模式的多模纤维。这样的光学纤维可以是:圆形的,由此支持作为横向、垂直和径向对称模式中的至少一个的多个模式;矩形的,由此支持横向的多个模式但垂直的单个模式;矩形的,支持横向的多个模式与垂直的有限模式(例如2-5个);以及具有类似或其他横截面的波导。这样的光学纤维可以是分立的、处于由分立光学纤维与每光学纤维的分立包覆部组装的带状形式、处于在光学纤维之间具有共用包覆部的带状形式,嵌入聚合物柔性膜中的光学纤维,以及附接至聚合物柔性膜的光学纤维。
如在本文中且遍及该公开内容所使用的“复用器(MUX)”指代组合多个源信道并且提供单个组合输出的设备。这包括但不限于无源复用器,具有发射器和WDM的有源复用器,具有接收器、发射器和WDM的有源复用器,单向复用器和双向复用器。如在本文中且遍及该公开内容所使用的“解复用器(DMUX)”指代组合多个源信道并且提供单个组合输出的设备。这包括但不限于无源解复用器,具有接收机和WDM的有源解复用器,具有接收器、发射器和WDM的有源解复用器,单向解复用器。
附图中的流程图和框图,图示了按照本公开各种实施例的***、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上,流程图或框图中的每个方框可以代表一个模块、程序段、或代码的一部分,该模块、程序段、或代码的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。也应当注意,在有些作为替换的实现中,方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如,两个接连地表示的方框实际上可以基本并行地执行,它们有时也可以按相反的顺序执行,这依所涉及的功能而定。需要注意的是,框图和/或流程图中的每个方框、以及框图和/或流程图中的方框的组合,可以用执行规定的功能或操作的专用的基于硬件的***来实现,或者可以用专用硬件与计算机指令的组合来实现。
以上所述仅为本发明的较佳实施例,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种双轴张应变锗硅量子阱调制器,其材料外延结构由下往上依次包括:P型硅衬底、P型锗硅合金缓冲层、本征锗硅合金下隔离层、本征锗硅合金耦合量子阱层、本征锗硅合金上隔离层和N型锗硅合金盖层,其特征在于,所述本征锗硅合金耦合量子阱层包括多个对称耦合量子阱,
每个对称耦合量子阱包括两个相同宽度的量子阱、一个中间薄壁垒和两个侧边壁垒;相邻两个对称耦合量子阱共用一个侧边壁垒区,且中间薄壁垒与侧边壁垒的锗硅合金组分相同。
2.根据权利要求1所述的双轴张应变锗硅量子阱调制器,其特征在于,所述本征锗硅合金耦合量子阱层由5~10个对称耦合量子阱组成。
3.根据权利要求1所述的双轴张应变锗硅量子阱调制器,其特征在于,所述两个侧边壁垒的材料组分为Si0.15Ge0.85。
4.根据权利要求3所述的双轴张应变锗硅量子阱调制器,其特征在于,单个对称耦合量子阱的组成成分为:
12nmSi0.15Ge0.85+6nmGe+2nmSi0.15Ge0.85+12nmGe+12nmSi0.15Ge0.85,所述中间薄壁垒的宽度为2nm。
5.根据权利要求1所述的双轴张应变锗硅量子阱调制器,其特征在于,所述P型硅衬底的高度为500μm~600μm,所述P型锗硅合金缓冲层的高度为400nm~450nm,所述本征锗硅合金下隔离层的高度为50nm~80nm,所述本征锗硅合金耦合量子阱层的高度为200nm~400nm,所述本征锗硅合金上隔离层的高度为50nm~80nm,N型锗硅合金盖层的高度为150nm~200nm。
6.根据权利要求1所述的双轴张应变锗硅量子阱调制器,其特征在于,所述P型硅衬底以及所述P型锗硅合金缓冲层的宽度均为1.6μm~2.4μm;所述本征锗硅合金下隔离层、所述本征锗硅合金耦合量子阱层、所述本征锗硅合金上隔离层的宽度均为700nm~800nm。
7.根据权利要求1所述的双轴张应变锗硅量子阱调制器,其特征在于,还包括双轴张应变结构,
所述双轴张应变结构包括多个掏空结构,多个掏空结构呈十字形对称分布在锗硅波导的两侧。
8.根据权利要求7所述的双轴张应变锗硅量子阱调制器,其特征在于,所述掏空结构自P型锗硅合金缓冲层向P型硅衬底延伸,其深度大于等于1μm。
9.根据权利要求8所述的双轴张应变锗硅量子阱调制器,其特征在于,所述双轴张应变锗硅量子阱调制器的TE偏振和TM偏振的第一个吸收带,相比于对应的无应变锗硅量子阱调制器均发生了红移,红移宽度大于50nm。
10.一种集成光电子器件,其特征在于,所述集成光电子器件包括权利要求1至9任一项所述的双轴张应变锗硅量子阱调制器。
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