CN115491646A - Sputtering target for coating inner wall of pipe, sputtering structure and coating method thereof - Google Patents

Sputtering target for coating inner wall of pipe, sputtering structure and coating method thereof Download PDF

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Publication number
CN115491646A
CN115491646A CN202211142458.1A CN202211142458A CN115491646A CN 115491646 A CN115491646 A CN 115491646A CN 202211142458 A CN202211142458 A CN 202211142458A CN 115491646 A CN115491646 A CN 115491646A
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target
coating
pipe
wall
sputtering
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周利华
李鸿亚
华强
牛书通
雷震
陈江
李文腾
姜岳峰
赵宝玲
赵红
吴卓歆
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404 Co Ltd China National Nuclear Corp
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404 Co Ltd China National Nuclear Corp
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Priority to CN202211142458.1A priority Critical patent/CN115491646A/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/046Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention provides a sputtering target for coating the inner wall of a pipe, a sputtering structure and a coating method thereof, wherein the sputtering target for coating the inner wall of the pipe comprises: a target material and a magnetic block; the target material is in a hollow tubular shape; the magnetic block is columnar and is arranged inside the target material. The sputtering target coated on the inner wall of the pipe can effectively control the magnetic field range, so that electrons move in a smaller range, most of the electrons are bound in the working area of the magnetron sputtering coating, the escape of the electrons through the magnetic field is reduced, the ionization efficiency of the target material is increased, and the utilization efficiency of the target material is improved.

Description

Sputtering target for coating inner wall of pipe, sputtering structure and coating method thereof
Technical Field
The invention relates to the technical field of vacuum coating, in particular to a sputtering target for coating the inner wall of a pipe, a sputtering structure and a coating method thereof.
Background
Magnetron sputtering is a process of increasing a closed magnetic field parallel to the target surface in two-pole sputtering, and binding secondary electrons to a specific region of the target surface by means of an orthogonal electromagnetic field formed on the target surface to enhance ionization efficiency and increase ion density and energy, thereby realizing a high-rate sputtering process.
In the magnetron sputtering coating process, the influence of the generation and control of a magnetic field on the coating quality is great, particularly in the coating process of the inner wall of a pipe, a magnetic coil outside a magnetron sputtering furnace body is usually used for generating the magnetic field, the generation mode of the magnetic field finally causes the magnetic field to cover the whole furnace body indiscriminately, the motion trail of charged particles generated in the sputtering process depends on the range and the strength of the magnetic field, the indiscriminate magnetic field covers the whole furnace body, the moving range of the charged particles is too large, more electrons escape through the magnetic field due to a larger magnetic field range, the ionization efficiency of the target material is lower, the loss of the target material is larger during the coating of the inner wall of the pipe, and only a few parts of sputtered target material can be deposited on the inner wall of the pipe.
Disclosure of Invention
The technical problems to be solved by the invention are to provide a sputtering target for coating the inner wall of a pipe, a sputtering structure and a coating method thereof, and the technical problems of large magnetic field range, more escape of electrons through a magnetic field, low target ionization efficiency and large target loss in magnetron sputtering coating of the inner wall of the pipe in the prior art are solved.
In order to solve the technical problems, the technical scheme of the invention is as follows:
a tube inner wall coated sputter target comprising:
the target material is in a hollow tubular shape;
the magnetic block is columnar and is arranged inside the target.
Preferably, the magnetic block is of an integral structure or a multi-section splicing structure.
Preferably, the target and the magnetic block are coaxially arranged.
Preferably, a cooling water path is arranged between the target and the magnetic block.
Preferably, a metal isolation layer is arranged between the target and the magnetic block.
Preferably, the target and the end of the magnetic block are sealed and fixed by a fixing piece.
Further preferably, the fixing member is a screw thread or a flange.
The invention also provides a sputtering structure for coating the inner wall of the pipe, which comprises the sputtering target for coating the inner wall of the pipe.
Preferably, the sputtering structure for coating the inner wall of the pipe also comprises a pipe to be coated; the sputtering target is arranged in the pipe to be coated, and the sputtering target and the pipe to be coated are coaxially arranged.
The invention also provides a coating method for the inner wall of the pipe, which adopts the sputtering structure for coating the inner wall of the pipe.
Preferably, the method for coating the inner wall of the pipe comprises the following steps:
fixing a sputtering target in the center of a magnetron sputtering furnace body in a penetrating or suspending way, and mounting a pipe to be coated on the periphery of the sputtering target to enable the sputtering target and the pipe to be coated to be coaxially arranged;
and starting the magnetron sputtering furnace body, and coating the inner wall of the pipe to be coated with the film.
The scheme of the invention at least comprises the following beneficial effects:
the sputtering target for coating the inner wall of the pipe comprises: a target material and a magnetic block; the target material is in a hollow tubular shape; the magnetic block is columnar and is arranged inside the target material. According to the sputtering target with the structure, an electromagnetic coil does not need to be arranged outside a magnetron sputtering furnace body to generate a magnetic field, the magnetic field is located inside the target material, the magnetic field extends outwards from the position of the magnetic block, the magnetic field strength gradually decreases outwards from the position of the magnetic block, and the motion trail of charged particles depends on the range and the strength of the magnetic field, so that the magnetic field only covers the working area of magnetron sputtering coating, namely the area from the inner wall of a pipe to be coated to the surface of the target material of the sputtering target, the magnetic field range is effectively controlled, electrons move in a smaller range, most of electrons are bound in the working area of the magnetron sputtering coating, the escape of the electrons through the magnetic field is reduced, the ionization efficiency of the target material is increased, and the utilization efficiency of the target material is improved. In addition, the concentration of the working area of the magnetron sputtering coating greatly improves the coating quality.
Drawings
FIG. 1 is a schematic structural view of a tube inner wall coated sputtering target according to the present invention;
FIG. 2 is a schematic view of the installation structure of the sputtering target for coating the inner wall of the tube according to the present invention;
FIG. 3 is a schematic diagram of a sputtering structure of the inner wall coating of the tube according to the present invention;
wherein, 1, a target material; 2. a magnetic block; 3. a pipe to be coated with a film; 4. a magnetron sputtering furnace body.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Example 1
As shown in fig. 1-2, the sputtering target for coating the inner wall of the tube according to the present embodiment includes: a target material 1 and a magnetic block 2; the target material 1 is in a hollow tubular shape; the magnetic block 2 is columnar and is arranged inside the target.
For the purpose of realizing the present invention, the magnetic block 2 is not designed in a unique manner, and may be an integral structure or a multi-segment split structure. When the magnetic block 2 is of a multi-section splicing structure, the magnetic block can be formed by splicing a multi-section columnar structure. The shape of the magnetic block 2 includes but is not limited to a cylinder, a regular quadrangular prism, a pentagonal prism and a hexagonal prism. In this embodiment, the magnetic block 2 is an integral structure and is cylindrical.
It should be noted that the material of the magnetic block 2 is not exclusive, and in this embodiment, the magnetic block 2 is a magnet, and the magnetic field strength is 0.5T. Those skilled in the art can also select other magnetic materials as the magnetic block 2 according to practical situations.
In this embodiment, the magnetic block 2 is a common permanent magnet with a magnetic field strength of 0.5T, and may be replaced by a permanent magnet with any value in a range of a magnetic field strength of 0.4-0.7T. In order to improve the magnetic control effect of the coating film, the magnetic block 2 can be replaced by a strong magnet, and the magnetic field intensity can reach 1.4T.
Similarly, the material of the target 1 is not exclusive, and those skilled in the art can select the material of the target 1 according to the film material to be coated, including but not limited to radioactive metals, noble metals, and the like.
The target 1 and the magnetic block 2 are coaxially arranged. The stronger the magnetic field intensity is, the higher the target ionization efficiency is, the higher the coating efficiency is, and the faster the consumption of the target is, so that the target 1 and the magnetic block 2 are coaxially arranged, the uniform consumption of the target 1 in the circumferential direction can be ensured, and the service life of the target 1 is longer and the utilization rate is higher.
The target 1 and the magnetic block 2 are tightly attached in the axial direction. Because the target material 1 is heated and expanded quickly in the film coating process, the target material 1 and the magnetic block 2 are closely attached in the axial direction, so that the axis of the magnetic block 2 can be prevented from deviating from the axis of the target material 1.
In order to facilitate the cooling of the target 1 in the magnetron sputtering process, a cooling water path is arranged between the target 1 and the magnetic block 2. When a long-time film coating is needed, the target 1 needs to be cooled, and the time for cooling the target 1 can be shortened due to the arrangement of the cooling water path.
As a specific implementation manner of this embodiment, the cooling water path may be made of a stainless steel material. The structural design of the cooling water path is not exclusive, and for example, an interlayer may be provided between the target 1 and the magnetic block 2, and the cooling water path may be provided in the interlayer.
In order to facilitate the detachment of the target 1, a metal isolation layer is arranged between the target 1 and the magnetic block 2. Especially, when the target 1 is made of a noble metal, the target 1 can be easily separated from the magnetic block 2 due to the arrangement of the metal isolation layer.
In order to ensure the stability of the installation of the target 1 and the magnetic block 2, the end parts of the target 1 and the magnetic block 2 are sealed and fixed through a fixing part. The fixing member may be a screw thread or a flange. The magnetic block 2 can be firmly bound in the target 1 by the arrangement of the fixing piece.
The implementation also provides a sputtering structure for coating the inner wall of the pipe, which comprises the sputtering target for coating the inner wall of the pipe.
The sputtering structure of the coating on the inner wall of the pipe, as shown in fig. 3, further comprises a pipe 3 to be coated; the sputtering target is arranged in the pipe 3 to be coated, and the sputtering target and the pipe 3 to be coated are coaxially arranged.
According to the sputtering target with the structure, an electromagnetic coil does not need to be arranged outside a magnetron sputtering furnace body to generate a magnetic field, the magnetic block 2 is positioned inside the target material 1, the magnetic field extends outwards from the position of the magnetic block 2, the magnetic field intensity gradually decreases outwards from the position of the magnetic block 2, and the motion trail of charged particles depends on the range and the intensity of the magnetic field, so that the magnetic field only covers the working area of magnetron sputtering coating, namely the area between the inner wall of the pipe 3 to be coated and the surface of the target material 1 of the sputtering target, the magnetic field range is effectively controlled, electrons move in a smaller range, most of the electrons are bound in the working area of the magnetron sputtering coating, the escape of the electrons through the magnetic field is reduced, the ionization efficiency of the target material is increased, and the utilization efficiency of the target material is improved. In addition, the concentration of the working area of the magnetron sputtering coating greatly improves the coating quality.
The method for coating the inner wall of the pipe adopts the sputtering structure for coating the inner wall of the pipe, and comprises the following steps of:
(1) Fixing a sputtering target in the center of a magnetron sputtering furnace body 4 in a penetrating or suspending way, and installing a pipe 3 to be coated on the periphery of the sputtering target to enable the sputtering target and the pipe 3 to be coated to be coaxially arranged;
(2) And starting the magnetron sputtering furnace body 4, and coating the inner wall of the pipe 3 to be coated with the film.
As a specific implementation manner of this embodiment, in the step (2), a magnetron sputtering coating machine is used to perform magnetron sputtering coating on the inner wall of the pipe 3 to be coated under a vacuum degree of 30Pa, and a coating rate of the magnetron sputtering coating is 100nm/min.
Comparative example 1
The sputtering target for coating the inner wall of the tube of the present comparative example uses the same target material 1 as in example 1, except that: excluding the magnetic block 2.
The method for coating the inner wall of the tube of the comparative example is the same as the method of example 1, and the difference is only that: and an electromagnetic coil is arranged outside the magnetron sputtering furnace body 4 to generate a magnetic field, and the magnetic field intensity is 0.5T.
Comparative example of Effect
To verify the technical effect of the sputtering target for tube inner wall coating according to the present invention, the following tests were performed:
taking the sputtering targets in the embodiment 1 and the comparative example 1, coating the inner wall of the pipe with the same dimension according to the corresponding pipe inner wall coating method, and coating for 5min for 3 times. Weighing the original target by using an electronic scale, weighing the target after each film coating, and calculating the weight reduction of the target; weighing the original pipe to be coated by using an electronic scale, weighing the pipe to be coated after each coating, and calculating the weight gain of the pipe; and calculating the utilization rate of the target according to the weight reduction of the target and the weight increase of the pipe. According to GB/T5210-2006, an adhesion detector is used for measuring the coating bonding strength of the inner wall of the pipe.
The results of the experiment are as follows:
Figure BDA0003854039880000051
Figure BDA0003854039880000061
according to the results, the sputtering target for coating the inner wall of the pipe has the advantages that the utilization rate of the target material is greatly improved, the bonding strength of the coating is also greatly improved, and the better coating quality on the inner wall of the pipe can be achieved.
While the foregoing is directed to the preferred embodiment of the present invention, it will be appreciated by those skilled in the art that various changes and modifications may be made therein without departing from the principles of the invention as set forth in the appended claims.

Claims (10)

1. A sputtering target for coating the inner wall of a tube, comprising:
the target material (1), wherein the target material (1) is in a hollow tubular shape;
the magnetic block (2) is columnar and is arranged inside the target.
2. The tube inner wall coated sputtering target according to claim 1, wherein the magnetic block (2) is of an integral structure or a multi-segment splicing structure.
3. The tube inner wall coated sputtering target according to claim 1, wherein the target material (1) and the magnetic block (2) are coaxially arranged.
4. The sputtering target for coating the inner wall of the pipe according to claim 1, wherein a cooling water path is arranged between the target material (1) and the magnetic block (2).
5. The sputtering target for coating the inner wall of the pipe according to claim 1, wherein a metal isolation layer is arranged between the target material (1) and the magnetic block (2).
6. The tube inner wall coated sputtering target according to claim 1, wherein the target material (1) and the end of the magnetic block (2) are sealed and fixed by a fixing piece.
7. A sputtering structure for coating the inner wall of a pipe, comprising the sputtering target for coating the inner wall of a pipe according to any one of claims 1 to 6.
8. The sputtering structure for coating the inner wall of a pipe according to claim 7, further comprising a pipe (3) to be coated; the sputtering target is arranged in the pipe (3) to be coated, and the sputtering target and the pipe (3) to be coated are coaxially arranged.
9. A method for coating the inner wall of a pipe, characterized by using the sputtering structure for coating the inner wall of a pipe as claimed in claim 7 or 8.
10. The method for coating the inner wall of the pipe according to claim 9, comprising the steps of:
fixing a sputtering target in the center of a magnetron sputtering furnace body (4) in a penetrating or suspending way, and mounting a pipe (3) to be coated on the periphery of the sputtering target to enable the sputtering target and the pipe (3) to be coated to be coaxially arranged;
and starting the magnetron sputtering furnace body (4) to coat the inner wall of the pipe (3) to be coated with the film.
CN202211142458.1A 2022-09-20 2022-09-20 Sputtering target for coating inner wall of pipe, sputtering structure and coating method thereof Pending CN115491646A (en)

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040055870A1 (en) * 2002-09-25 2004-03-25 Ronghua Wei Method and apparatus of plasma-enhanced coaxial magnetron for sputter-coating interior surfaces
US20070062805A1 (en) * 2005-09-20 2007-03-22 Guardian Industries Corp. Sputtering target with bonding layer of varying thickness under target material
WO2009155394A2 (en) * 2008-06-18 2009-12-23 Angstrom Sciences, Inc. Magnetron with electromagnets and permanent magnets
CN101812667A (en) * 2010-04-19 2010-08-25 中国南玻集团股份有限公司 Magnetron sputtering plating film cathode device
CN103820765A (en) * 2014-03-22 2014-05-28 沈阳中北真空设备有限公司 Composite coating equipment and manufacturing method for neodymium iron boron rare-earth permanent magnetic device
US20150318152A1 (en) * 2014-05-02 2015-11-05 Paradigm Shift Technologies Inc. Sputtering targets and methods
CN105839065A (en) * 2016-05-26 2016-08-10 电子科技大学 Magnetron sputtering film coating device and method and preparation method of nano particles
US20170345628A1 (en) * 2014-10-29 2017-11-30 General Plasma Inc. Magnetic anode for sputter magnetron cathode
CN210529042U (en) * 2019-03-19 2020-05-15 杭州朗为科技有限公司 Cylindrical rotary magnetron sputtering cathode with high target conversion rate
CN212533106U (en) * 2020-08-28 2021-02-12 光驰科技(上海)有限公司 Spray type cooling sputtering cathode magnetic bar device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040055870A1 (en) * 2002-09-25 2004-03-25 Ronghua Wei Method and apparatus of plasma-enhanced coaxial magnetron for sputter-coating interior surfaces
US20070062805A1 (en) * 2005-09-20 2007-03-22 Guardian Industries Corp. Sputtering target with bonding layer of varying thickness under target material
WO2009155394A2 (en) * 2008-06-18 2009-12-23 Angstrom Sciences, Inc. Magnetron with electromagnets and permanent magnets
CN101812667A (en) * 2010-04-19 2010-08-25 中国南玻集团股份有限公司 Magnetron sputtering plating film cathode device
CN103820765A (en) * 2014-03-22 2014-05-28 沈阳中北真空设备有限公司 Composite coating equipment and manufacturing method for neodymium iron boron rare-earth permanent magnetic device
US20150318152A1 (en) * 2014-05-02 2015-11-05 Paradigm Shift Technologies Inc. Sputtering targets and methods
US20170345628A1 (en) * 2014-10-29 2017-11-30 General Plasma Inc. Magnetic anode for sputter magnetron cathode
CN105839065A (en) * 2016-05-26 2016-08-10 电子科技大学 Magnetron sputtering film coating device and method and preparation method of nano particles
CN210529042U (en) * 2019-03-19 2020-05-15 杭州朗为科技有限公司 Cylindrical rotary magnetron sputtering cathode with high target conversion rate
CN212533106U (en) * 2020-08-28 2021-02-12 光驰科技(上海)有限公司 Spray type cooling sputtering cathode magnetic bar device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
郭艳青等: "《大学物理实验 第2版》", 31 May 2021, 广州暨南大学出版社, pages: 184 *

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