CN115458583B - 一种快恢复二极管的金铂双掺杂方法 - Google Patents
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 67
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 229910052796 boron Inorganic materials 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
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Abstract
本发明公开了快恢复二极管领域内的一种快恢复二极管的金铂双掺杂方法,包括以下步骤:S1:在N型硅衬底上面生长N‑型外延层,在N‑型外延层上面生长氧化层;S2:通过光刻,在氧化层上开出环区和元胞区,并注入少量的硼离子,再通过退火处理,形成P‑型轻掺杂区;S3:在步骤S2后所得制品上面生长多晶硅形成多晶硅层,对多晶硅层进行重掺杂,通过光刻,去除环区及元胞区上面的多晶硅;S4:在N型硅衬底背面溅射或蒸发一层铂,并进行高温退火;S5:在步骤S4后所得制品正面溅射或蒸发一层的金,并进行二次高温退火。该掺杂方法中可优化快恢复二极管内VF的均一性;得到较优的VF‑Trr曲线;提高快恢复二极管PN结击穿电压。
Description
技术领域
本发明涉及快恢复二极管技术领域,特别涉及一种快恢复二极管的金铂双掺杂方法。
背景技术
与普通二极管相比,恢复二极管最大的特点就是超快速的反向恢复特性(反向恢复时间范围为10~150纳秒)。反向恢复时间主要决定于基区少子寿命,因此,少子寿命的变化及少子寿命的控制方法在超快恢复二极管的研究中就显得尤其重要。寿命控制技术的原理是向器件内部引入空间分布适当的复合中心,以有效减小少子寿命,提高器件开关速度。对复合中心的研究主要集中在复合中心的能级位置E,电子俘获系数,空穴俘获系数,退火温度等方面。采用的寿命控制技术有掺金、掺铂、电子辐照等方法。
目前国内外主流为利用掺杂铂来控制少子寿命,但是掺铂制品容易受到衬底材料缺陷、外延加工过程中夹具的杂质渗入等影响,导致产品片内VF均一性差,VF-Trr曲线较差。
发明内容
本申请通过提供一种快恢复二极管的金铂双掺杂方法,解决了现有技术中掺铂制品容易出现片内VF均一性差,VF-Trr曲线较差的问题,得到较优的VF-Trr曲线。
本申请实施例提供了一种快恢复二极管的金铂双掺杂方法,包括以下步骤:
S1:在N型硅衬底上面生长N-型外延层,在所述N-型外延层上面生长氧化层;
S2:通过光刻,在所述氧化层上开出环区和元胞区,并注入少量的硼离子,再通过退火处理,形成P-型轻掺杂区;
S3:在所述步骤S2后所得制品上面生长多晶硅形成多晶硅层,对所述多晶硅层进行重掺杂,通过光刻,去除所述环区及元胞区上面的多晶硅;
S4:在所述N型硅衬底背面溅射或蒸发一层铂,并进行高温退火;
S5:在所述步骤S4后所得制品正面溅射或蒸发一层的金,并进行二次高温退火。
上述实施例的有益效果在于:背面溅射铂,降低高温扩铂带来的反型几率,便于提升扩铂温度,产出芯片具有更短的关断时间、反向过冲电流,同时使反向恢复比较平缓,得到更大的软度;重掺杂的多晶硅会吸引背面的铂杂质进行大量富集,降低衬底材料缺陷、加工过程的杂质渗入带来的影响,优化片内VF的均一性;正面掺杂金降低铂杂质在芯片终端区的整体缺陷浓度,优化复合中心分布,利用金原子能级优势,最终得到较优的VF-Trr曲线;同时环区的重掺杂多晶硅,可以消除结面弯曲效应的影响,削弱表面电场强度,提高功率快恢复器件PN结击穿电压。
在上述实施例基础上,本申请可进一步改进,具体如下:
在本申请其中一个实施例中,所述步骤S2中,所述硼离子掺杂浓度为1E12-9E14,所述退火温度为1000-1300℃,退火期间,通入1-10slm的氮气。最终形成结深1-15um的轻掺杂环区和元胞区。
在本申请其中一个实施例中,所述步骤S3中所述多晶硅层掺杂磷离子,掺杂浓度为1E20-9E22。
在本申请其中一个实施例中,所述步骤S4中,所述铂退火温度为930-950℃,退火期间,通入1-10slm的氮气。提高铂退火温度,同时在1-10slm的氮气氛围下对金属铂进行激活,形成深能级复合中心来控制少数载流子寿命。
在本申请其中一个实施例中,所述步骤S5中,所述金退火温度为500-900℃,退火期间,通入1-10slm的氮气。在1-10slm的氮气氛围下对金原子进行退火,通过金原子的引入,对已经形成的复合中心进一步优化,降低铂原子形成的复合中心浓度,减少铂杂质浓度不均对VF的影响,最终得到较优的VF-Trr曲线。
在本申请其中一个实施例中,所述方法还包括步骤:
S6:通过溅射或蒸发在正面镀一层金属层,并通过光刻、刻蚀形成正面电极;通过溅射或蒸发在背面镀一层金属层,形成背面电极。最终获得性能可靠,VF-Trr曲线较优的快恢复二极管。
本申请实施例中提供的一个或多个技术方案,至少具有如下技术效果或优点:
1.该掺杂方法通过背面溅射铂、正面设置重掺杂的多晶硅,来降低衬底材料缺陷、加工过程的杂质渗入带来的影响,优化片内VF的均一性;
2.该掺杂方法中通过背面溅射铂、正面掺杂金的方式优化复合中心分布,利用金原子能级优势,最终得到较优的VF-Trr曲线;
3.该掺杂方法中环区的重掺杂多晶硅,可以消除结面弯曲效应的影响,削弱表面电场强度,提高功率快恢复器件PN结击穿电压。
附图说明
为了更清楚地说明本发明具体实施方式或现有技术中的技术方案,下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍。在所有附图中,类似的元件或部分一般由类似的附图标记标识。附图中,各元件或部分并不一定按照实际的比例绘制。
图1为实施例中金铂双掺杂方法的过程示意图一;
图2为实施例中金铂双掺杂方法的过程示意图二;
图3为实施例中金铂双掺杂方法的过程示意图三;
图4为实施例中金铂双掺杂方法的过程示意图四;
图5为实施例中金铂双掺杂方法的过程示意图五;
图6为实施例中金铂双掺杂方法的过程示意图六。
其中,1.N型硅衬底、2.N-型外延层、3.氧化层、4.P-型轻掺杂区、5.多晶硅层、6.铂、7.金、8.正面电极、9.背面电极。
具体实施方式
下面结合具体实施方式,进一步阐明本发明,应理解这些实施方式仅用于说明本发明而不用于限制本发明的范围,在阅读了本发明之后,本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定的范围。
应注意到:相似的标号和字母在下面的附图中表示类似项,因此,一旦某一项在一个附图中被定义,则在随后的附图中不需要对其进行进一步定义和解释。
在本发明的描述中,需要说明的是,术语“竖直”、“外周面”等指示的方位或位置关系为基于附图所示的方位或位置关系,或者是该发明产品使用时惯常摆放的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。
在本发明的描述中,对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外,在不相互矛盾的情况下,本领域的技术人员可以将本发明描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
本申请实施例通过提供一种快恢复二极管的金铂双掺杂方法,解决了现有技术中掺铂制品容易出现片内VF均一性差,VF-Trr曲线较差的问题,得到较优的VF-Trr曲线。
本申请实施例中的技术方案为解决上述问题,总体思路如下:
实施例:
一种快恢复二极管的金铂双掺杂方法,包括以下步骤:
S1:如图1所示,在N型硅衬底1上面生长N-型外延层2,在N-型外延层2上面生长氧化层3。
S2:如图2所示,通过光刻,在氧化层3上开出环区和元胞区,并注入硼离子,再通过退火处理,形成P-型轻掺杂区4。
其中,硼离子掺杂浓度为1E12-9E14,退火温度为1000-1300℃,退火期间,通入1-10slm的氮气,最终形成结深1-15um的轻掺杂环区和元胞区。
S3:如图3所示,在步骤S2后所得制品上面生长多晶硅形成多晶硅层5,对多晶硅层5进行重掺杂,通过光刻,去除环区及元胞区上面的多晶硅。
其中,多晶硅层掺杂磷离子,掺杂浓度为1E20-9E22。
S4:如图4所示,在N型硅衬底1背面溅射或蒸发一层铂6,并进行高温退火。
其中,铂退火温度为930-950℃,退火期间,通入1-10slm的氮气,在氮气氛围下对金属铂进行激活,形成深能级复合中心来控制少数载流子寿命。
S5:如图5所示,在步骤S4后所得制品正面溅射或蒸发一层的金7,并进行二次高温退火。
其中,金退火温度为500-900℃,退火期间,通入1-10slm的氮气。在氮气氛围下对金原子进行退火,通过金原子的引入,对已经形成的复合中心进一步优化,降低铂原子形成的复合中心浓度,减少铂杂质浓度不均对VF的影响,最终得到较优的VF-Trr曲线。
S6:如图6所示,通过溅射或蒸发在步骤S5后所得制品正面镀一层所需金属层,并通过光刻、刻蚀形成正面电极8;再通过溅射或蒸发在背面镀一层所需金属层,形成背面电极9。
上述本申请实施例中的技术方案,至少具有如下的技术效果或优点:
1.该掺杂方法通过背面溅射铂、正面设置重掺杂的多晶硅,来降低衬底材料缺陷、加工过程的杂质渗入带来的影响,优化片内VF的均一性;
2.该掺杂方法中通过背面溅射铂、正面掺杂金的方式优化复合中心分布,利用金原子能级优势,最终得到较优的VF-Trr曲线;
3.该掺杂方法中环区的重掺杂多晶硅,可以消除结面弯曲效应的影响,削弱表面电场强度,提高功率快恢复器件PN结击穿电压。
尽管上面已经示出和描述了本发明的实施例,可以理解的是,上述实施例是示例性的,不能理解为对本发明的限制,本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。
Claims (6)
1.一种快恢复二极管的金铂双掺杂方法,其特征在于,包括以下步骤:
S1:在N型硅衬底上面生长N-型外延层,在所述N-型外延层上面生长氧化层;
S2:通过光刻,在所述氧化层上开出环区和元胞区,并注入少量的硼离子,再通过退火处理,形成P-型轻掺杂区;
S3:在所述步骤S2后所得制品上面生长多晶硅形成多晶硅层,对所述多晶硅层进行重掺杂,通过光刻,去除所述环区及元胞区上面的多晶硅;
S4:在所述N型硅衬底背面溅射或蒸发一层铂,并进行高温退火,对金属铂进行激活,形成深能级复合中心来控制少数载流子寿命;
S5:在所述步骤S4后所得制品正面溅射或蒸发一层的金,并进行二次高温退火,对金原子进行退火,通过金原子的引入,对已经形成的复合中心进一步优化,降低铂原子形成的复合中心浓度,减少铂杂质浓度不均对VF 的影响,最终得到较优的VF-Trr 曲线;
其中,步骤S3中,重掺杂的多晶硅会吸引背面的铂杂质进行大量富集,降低衬底材料缺陷、加工过程的杂质渗入带来的影响,优化片内VF的均一性。
2.根据权利要求1所述的金铂双掺杂方法,其特征在于:所述步骤S2中,所述硼离子掺杂浓度为1E12-9E14,所述退火温度为1000-1300℃,退火期间,通入1-10slm的氮气。
3.根据权利要求2所述的金铂双掺杂方法,其特征在于:所述步骤S3中所述多晶硅层掺杂磷离子,掺杂浓度为1E20-9E22。
4.根据权利要求3所述的金铂双掺杂方法,其特征在于:所述步骤S4中,所述铂退火温度为930-950℃,退火期间,通入1-10slm的氮气。
5.根据权利要求4所述的金铂双掺杂方法,其特征在于:所述步骤S5中,所述金退火温度为500-900℃,退火期间,通入1-10slm的氮气。
6.根据权利要求1所述的金铂双掺杂方法,其特征在于,还包括步骤:
S6:通过溅射或蒸发在正面镀一层金属层,并通过光刻、刻蚀形成正面电极;通过溅射或蒸发在背面镀一层金属层,形成背面电极。
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