CN115458543B - Visual sensor, optoelectronic device, image recognition method and device - Google Patents
Visual sensor, optoelectronic device, image recognition method and device Download PDFInfo
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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Abstract
The invention provides a visual sensor, an optoelectronic device, an image recognition method and a device, wherein an oxide layer is stacked at the upper end of a substrate in the visual sensor; the metal grid pair is stacked at a first site at the upper end of the oxide layer and is used for receiving an applied voltage to form a grid voltage difference so as to control charge trapping and de-trapping processes in the two-dimensional material layer; the first dielectric layer is stacked on the upper end of the metal electrode pair and is stacked on the upper end of the second site and the upper end of the third site; the metal source electrode and the metal drain electrode are respectively stacked at the upper end of the first dielectric layer and distributed at two sides of the metal gate pair; the two-dimensional material layer is stacked on the upper end of the first dielectric layer and on the upper ends of the metal source electrode and the metal drain electrode, wherein a charge defect state is introduced into the two-dimensional material layer; the second dielectric layer is stacked on the upper end of the two-dimensional material layer. The invention enables the vision sensor to have high resolution and strong detection capability under different illumination conditions.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technologies, and in particular, to a vision sensor, an optoelectronic device, and an image recognition method and apparatus.
Background
With the production and rapid propagation of mass information, the emerging technologies such as 5G/6G mobile communication, cloud computing, artificial intelligence and the like rapidly develop, and the society has entered the universal interconnection era. Machine vision has been successfully applied to various fields of intelligent vehicles, real-time video analysis, internet of things, intelligent life, etc., which requires a vision sensor to have high resolution, high response speed, good stability and strong detection capability under different illumination conditions.
However, the current vision sensor has low resolution, slow response speed, and cannot satisfy the strong detection capability under different illumination conditions. Thus, a visual sensor with high resolution and strong detection capability under different illumination conditions is currently being sought as a hot spot for research.
Disclosure of Invention
The invention provides a visual sensor, an optoelectronic device, an image recognition method and an image recognition device, wherein the visual sensor has high resolution and can have strong detection capability under different illumination conditions.
The present invention provides a vision sensor comprising: a substrate, an oxide layer, a metal electrode pair, a first dielectric layer, a metal source electrode, a metal drain electrode, a two-dimensional material layer and a second dielectric layer, wherein the oxide layer is stacked at the upper end of the substrate; the metal gate pair is stacked at a first site at the upper end of the oxide layer, wherein the upper end of the oxide layer comprises the first site, a second site and a third site, the second site and the third site are distributed at two sides of the first site, and the metal gate pair is used for receiving an applied voltage to form a gate voltage difference so as to control charge trapping and de-trapping processes in the two-dimensional material layer; the first dielectric layer is stacked on the upper end of the metal electrode pair and is stacked on the upper end of the second site and the upper end of the third site, so that the first dielectric layer is in a convex shape; the metal source electrode and the metal drain electrode are respectively stacked at the upper end of the first dielectric layer and distributed at two sides of the metal gate pair; the two-dimensional material layer is stacked at the upper end of the first dielectric layer and at the upper ends of the metal source electrode and the metal drain electrode, wherein the two-dimensional material layer is a two-dimensional material layer with charge defect introduced; the second dielectric layer is stacked on top of the two-dimensional material layer.
According to the visual sensor provided by the invention, the two-dimensional material layer is a thin film structure formed by one or more of a graphene layer introducing a charge defect state, a transition metal chalcogenide layer introducing a charge defect state, a two-dimensional tellurium alkene molecular layer introducing a charge defect state or a transition metal chalcogenide heterojunction introducing a charge defect state.
According to the visual sensor provided by the invention, the oxide layer comprises a silicon dioxide layer.
According to one visual sensor provided by the invention, the first dielectric layer and/or the second dielectric layer comprises one or more of aluminum oxide, silicon nitride or hexagonal boron nitride.
According to the present invention, there is provided a vision sensor, further comprising:
the processing module is used for determining a target image corresponding to the target photocurrent through a preset first mapping table based on the target photocurrent collected by the metal source electrode and the metal drain electrode, wherein the target photocurrent is determined based on the image to be identified perceived by the two-dimensional material layer, and the first mapping table comprises a mapping relation between the photocurrent and the image.
The invention also provides an optoelectronic device comprising the vision sensor.
The invention also provides an image recognition method which is applied to the vision sensor, wherein the vision sensor comprises a metal gate pair, a two-dimensional material layer, a metal source electrode and a metal drain electrode, and the image recognition method comprises the following steps: acquiring an image to be identified and the target illumination intensity in the environment where the image to be identified is located; determining a target voltage difference corresponding to the target illumination intensity based on a preset second mapping table, wherein the second mapping table comprises a mapping relation between the illumination intensity and the voltage difference; applying a gate voltage to the metal gate pair based on the target voltage difference to control charge trapping and de-trapping processes in the two-dimensional material layer to match charge trapping and de-trapping processes in the two-dimensional material layer to the target illumination intensity, wherein the gate voltage is the same as the target voltage difference; acquiring a target photocurrent based on the metal source electrode and the metal drain electrode, wherein the target photocurrent corresponds to a charge trapping and de-trapping process in the two-dimensional material layer; and determining a target image corresponding to the target photocurrent based on the target photocurrent, wherein the target image is an image after the image to be identified is identified.
The present invention also provides an image recognition device applied to the vision sensor, the vision sensor including a metal gate pair, a two-dimensional material layer, a metal source and a metal drain, the image recognition device including: the first module is used for acquiring an image to be identified and target illumination intensity in an environment where the image to be identified is located; the second module is used for determining a target voltage difference corresponding to the target illumination intensity based on a preset second mapping table, wherein the second mapping table comprises a mapping relation between the illumination intensity and the voltage difference; a third module for applying a gate voltage to the pair of metal gates based on the target voltage difference to control a charge trapping and de-trapping process in the two-dimensional material layer to match the charge trapping and de-trapping process in the two-dimensional material layer to the target illumination intensity, wherein the gate voltage is the same as the target voltage difference; a fourth module, configured to obtain a target photocurrent based on the metal source and the metal drain, where the target photocurrent corresponds to a charge trapping and de-trapping process in the two-dimensional material layer; and a fifth module, configured to determine, based on the target photocurrent, a target image corresponding to the target photocurrent, where the target image is an image after the image to be identified is identified.
The invention also provides an electronic device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, the processor implementing the image recognition method as described in any one of the above when executing the program.
The present invention also provides a non-transitory computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements an image recognition method as described in any of the above.
The invention provides a vision sensor, an optoelectronic device, an image recognition method and a device, wherein the vision sensor comprises a substrate, an oxide layer, a metal electrode pair, a first dielectric layer, a metal source electrode, a metal drain electrode, a two-dimensional material layer and a second dielectric layer. Wherein the oxide layer is stacked on the upper end of the substrate; the metal grid pair is stacked at a first site at the upper end of the oxide layer and is used for receiving an applied voltage to form a grid voltage difference so as to control charge trapping and de-trapping processes in the two-dimensional material layer; the first dielectric layer is stacked on the upper end of the metal electrode pair and is stacked on the upper end of the second site and the upper end of the third site; the metal source electrode and the metal drain electrode are respectively stacked at the upper end of the first dielectric layer and distributed at two sides of the metal gate pair; the two-dimensional material layer is stacked on the upper end of the first dielectric layer and on the upper ends of the metal source electrode and the metal drain electrode; the second dielectric layer is stacked on the upper end of the two-dimensional material layer. By introducing charge defect states into the two-dimensional material layer, pixel level adjustment of photosensitivity of the device under different illumination conditions can be realized, and the perception adaptability of the device is improved, so that the vision sensor has high resolution and strong detection capability under different illumination conditions.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a vision sensor provided by the present invention;
FIG. 2 is a schematic structural view of an optoelectronic device provided by the present invention;
FIG. 3 is a schematic flow chart of an image recognition method provided by the invention;
FIG. 4 is a schematic diagram of an image recognition device according to the present invention;
fig. 5 is a schematic structural diagram of an electronic device provided by the present invention.
Reference numerals:
100: a visual sensor; 101: a substrate;
102: an oxide layer; 1021: a second site;
1022: a first site; 1023: a third site;
103: a metal gate pair; 104: a first dielectric layer;
105: a metal source; 106: a metal drain;
107: a two-dimensional material layer; 108: a second dielectric layer;
200: optoelectronic devices.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
To further describe the vision sensor provided by the present invention, a description will be given below with reference to fig. 1.
Fig. 1 is a schematic structural diagram of a vision sensor provided by the present invention.
In an exemplary embodiment of the present invention, as can be seen in conjunction with fig. 1, a visual sensor 100 may include a substrate 101, an oxide layer 102, a metal gate pair 103, a first dielectric layer 104, a metal source 105, a metal drain 106, a two-dimensional material layer 107, and a second dielectric layer 108. The respective components will be described below.
In one embodiment, the oxide layer 102 is stacked on top of the substrate 101. The metal gate pair 103 is stacked on the first site 1022 on the upper end of the oxide layer 102, wherein the upper end of the oxide layer 102 includes the first site 1022, the second site 1021, and the third site 1023, and the second site 1021 and the third site 1023 are distributed on both sides of the first site 1022. It is understood that at the upper end of the oxide layer 102, it may be divided into 3 portions, namely, a first site 1022, a second site 1021, and a third site 1023, wherein the second site 1021 and the third site 1023 are distributed on both sides of the first site 1022. In an example, the substrate 101 may be formed of silicon.
In yet another embodiment, the metal gate pair 103 is used to receive an applied voltage to create a gate voltage difference to control the charge trapping and de-trapping process in the two-dimensional material layer 107. The metal gate pairs 103 are not in contact with each other, and have good insulation therebetween.
During application, by applying different voltages across the metal gate pair 103, a gate voltage difference is created for controlling the charge trapping and de-trapping processes in the two-dimensional material layer 107, thereby enabling accurate, dynamic adjustment of the conductance of the device (corresponding to the vision sensor 100). In this embodiment, by applying different voltages to the metal gate pair 103 to create a gate voltage difference to control the charge trapping and de-trapping processes in the two-dimensional material layer 107, the same device (corresponding vision sensor 100) can be allowed to create excitation under different background light illumination, suppress two opposite light responses, and control the device vision light adaptation and dark adaptation levels by applying different gate voltage differences to simulate the structure and function of light receiving cells and horizontal cells in the retina. The pixel level adjustment of the photosensitivity of the device under different illumination conditions can be realized, and the sensing adaptability of the device is improved, so that the vision sensor has high resolution and strong detection capability under different illumination conditions.
In yet another embodiment, the first dielectric layer 104 is stacked on the upper end of the metal gate pair 103 and on the upper end of the second location 1022 and the upper end of the third location 1023, so that the first dielectric layer 104 is convex.
In yet another embodiment, the metal source 105 and the metal drain 106 are respectively stacked on the upper end of the first dielectric layer 104 and distributed on two sides of the metal gate pair 103. The metal source 105 and the metal drain 106 have an excessively good electrical response curve, the positive and negative of the current are positively correlated with the direction of the applied voltage, and the magnitude of the current is substantially linearly correlated with the magnitude of the applied voltage.
In yet another embodiment, the two-dimensional material layer 107 is stacked on top of the first dielectric layer 104 and on top of the metal source 105 and the metal drain 106. The two-dimensional material layer 107 is a two-dimensional material layer that introduces a charge defect state. A second dielectric layer 108 is stacked on top of the two-dimensional material layer 107.
In this embodiment, the photosensitive material of the vision sensor 100 is composed of a two-dimensional material layer 107. The optical band gap is larger and is positioned in the visible light band. Therefore, in the absence of light irradiation, the intrinsic excitation carriers in the light source are fewer, and the dark current is extremely small. Due to the high quantum efficiency of the two-dimensional material layer 107, when light is irradiated, a large number of carriers are transited from a valence band to a conduction band, and photocurrent is formed under the action of an electric field; the number of photo-generated carriers is closely related to the light intensity, so that the perception of light is realized. In addition, the charge trap state on the surface of the two-dimensional material layer 107 is used for storing optical information, can realize accurate dynamic regulation and control on the physical properties of the photoelectronics of the device, can realize pixel level regulation on the photosensitivity of the device under different illumination conditions, and improves the perception adaptability of the device, so that the vision sensor has high resolution and strong detection capability under different illumination conditions.
The second dielectric layer 108 and the first dielectric layer 104 may be the same dielectric layer or may be different types of dielectric layers, and in this embodiment, the specific form of the first dielectric layer 104 and the second dielectric layer 108 is not limited.
The invention provides a vision sensor which comprises a substrate, an oxide layer, a metal electrode pair, a first dielectric layer, a metal source electrode, a metal drain electrode, a two-dimensional material layer and a second dielectric layer. Wherein the oxide layer is stacked on the upper end of the substrate; the metal grid pair is stacked at a first site at the upper end of the oxide layer and is used for receiving an applied voltage to form a grid voltage difference so as to control charge trapping and de-trapping processes in the two-dimensional material layer; the first dielectric layer is stacked on the upper end of the metal electrode pair and is stacked on the upper end of the second site and the upper end of the third site; the metal source electrode and the metal drain electrode are respectively stacked at the upper end of the first dielectric layer and distributed at two sides of the metal gate pair; the two-dimensional material layer is stacked on the upper end of the first dielectric layer and on the upper ends of the metal source electrode and the metal drain electrode; the second dielectric layer is stacked on the upper end of the two-dimensional material layer. By introducing charge defect states into the two-dimensional material layer, pixel level adjustment of photosensitivity of the device under different illumination conditions can be realized, and the perception adaptability of the device is improved, so that the vision sensor has high resolution and strong detection capability under different illumination conditions.
In yet another exemplary embodiment of the present invention, the two-dimensional material layer 107 may be a thin film structure composed of one or more of a graphene layer that introduces a charge defect state, a transition metal chalcogenide layer that introduces a charge defect state (also known as TMDCs), a two-dimensional tellurium molecule layer that introduces a charge defect state, or a transition metal chalcogenide heterojunction that introduces a charge defect state (also known as TMDCs). Note that, the two-dimensional material layer 107 may be any two-dimensional material layer that introduces a charge defect state, and in this embodiment, the two-dimensional material layer 107 is not specifically limited.
In this embodiment, the two-dimensional materials represented by graphene, transition Metal Sulfides (TMDCs), two-dimensional tellurium and the like have strong photo-substance interactions, unique physical defect states and electrostatic modulation effects due to their unique physical properties, and can be used for manufacturing photosensitive devices, and can be effectively modulated at a local level. Taking a single-layer two-dimensional TMDCs material as an example, the direct band gap is about 1.0-2.5 eV, and the material has good Photoluminescence (PL) characteristic and stronger light absorption (> 10%), and is a good candidate material for a photoelectric sensor. In particular, single-layer or few-layer (2-10-layer) TMDCs materials are particularly promising for use as photosensitive materials in visual photosensors because their bandgap structure can be tuned in a variety of ways, such as electrical doping, laser modification, changing the number of layers, etc., and thus possess a large range of operating wavelengths.
Further, the charge trapping state in TMDCs affects the photoelectric response because its density is comparable to the carrier concentration. Therefore, TMDCs are used in transistor type devices, and charge trapping and de-trapping processes are realized by constructing a three-dimensional stacked architecture and controlling metal gate voltage differences, so that the device establishes excitation and suppresses two opposite light responses under different background light illumination, and thus has photopic and scotopic adaptability. Based on the above, the architecture and the two-dimensional material defect state of the vision sensor provided by the invention are used for realizing photon vision bionic neurons (corresponding to the vision sensor) and optoelectronic devices with vision perception adaptivity, large perception range and high image signal processing timeliness.
It is worth mentioning that the natural passivation of the two-dimensional material surface has no dangling bond, is easy to be compatible with a silicon optoelectronics platform and a CMOS integration process, and can be integrated on a large scale on an optoelectronic chip.
In yet another exemplary embodiment of the present invention, the oxide layer 102 may include a silicon dioxide layer. In yet another example, the thickness of the oxide layer 102 may be approximately 2 millimeters. In this embodiment, the thickness of the oxide layer 102 may not be particularly limited.
In yet another exemplary embodiment of the present invention, the first dielectric layer 104 and/or the second dielectric layer 107 may include one or more of aluminum oxide, silicon nitride, or hexagonal boron nitride.
In yet another example embodiment of the invention, the vision sensor 100 may further include a processing module. The processing module is understood to be a chip, among other things.
In the application process, the processing module may be configured to determine a target image corresponding to the target photocurrent based on the target photocurrent collected by the metal source 105 and the metal drain 106 through a preset first mapping table, where the target photocurrent is determined based on the image to be identified perceived by the two-dimensional material layer 107, and the first mapping table includes a mapping relationship between the photocurrent and the image. It will be appreciated that the target photocurrent may be one of the photocurrents in the first mapping table and the target image may be one of the images in the first mapping table. As a modification, the target photocurrent may be a photocurrent in the first mapping table, which is a combination of a plurality of photocurrents, and the target image may be an image in the first mapping table, which is a combination of a plurality of images. In the process of identifying the image to be identified, each sub-image (which may correspond to the image in the first mapping table) in the image to be identified may also be identified, and the combined sub-image is used as the target image.
It should be noted that the image to be identified is the target image after being accurately identified. In this embodiment, by presetting the first mapping table, a target image corresponding to the target photocurrent can be determined quickly based on the target photocurrent, so that accurate recognition of the image to be recognized can be realized quickly.
In still another embodiment of the present invention, based on a plurality of vision sensors 100, a vision sensor array may be formed on a plane according to a certain arrangement rule. In the application process, the grid voltage difference of the metal grid pair 103 in each vision sensor 100 can be dynamically regulated to control the vision brightness adaptation and dark adaptation degree of the device, so that the structure and the function of light receiving cells and horizontal cells in retina are simulated, and a foundation is laid for realizing efficient sensing and processing of images. In addition, the visual sensor array is formed by a plurality of visual sensors 100, so that the sensing range of the device can be effectively enlarged, the timeliness of image signal processing is improved, and the high-speed image signal processing requirement of the data-intensive front end in the Internet of things is met.
In the working process of the vision sensor 100, the metal electrode pair 103 can be utilized to perform electric doping modulation on the two-dimensional material layer 107, and a heterostructure in a two-dimensional plane is constructed, so that the direction and the magnitude of photocurrent can be regulated and controlled through the outside, and the initialization function and the programmable synaptic function of the neural network are realized. Furthermore, the photo-generated carriers are collected by the metal source electrode 105 and the metal drain electrode 106, so that the processing integration and the reading of the image space optical information are accurately realized, and the efficient sensing and the processing of the image can be realized.
According to the description, the vision sensor provided by the invention realizes pixel level adjustment of the photosensitivity of the device under different illumination conditions by introducing charge defect states, and has the capability of simulating horizontal cells and photoreceptors in retina, so that the perception range of dark and bright fields and the image contrast ratio are improved. In addition, the loading and writing of the image information are realized in an electric control mode, so that the device has a repeatable programming and reconfigurable function, and the development of the next-generation characteristic intelligent sensor is promoted. In the aspect of realizing the fusion function of visual sensing and calculation tasks, a part with larger calculation cost is migrated to a sensor end, and the convolution part in an algorithm module is equivalently replaced in an analog domain by utilizing the physical characteristics of a photosensitive material and a micro-nano structure in the sensor so as to solve the high-speed image signal processing requirement of a data intensive front end in the Internet of things. The vision sensor provided by the invention explores a new technology of high-efficiency coupling of integrated sensing and computing hardware and an advanced intelligent algorithm, and promotes the application of the self-reactive optoelectronic device with high vision self-adaptability, simple hardware structure and intelligent processing algorithm in various fields such as intelligent vehicles, real-time video analysis, internet of things, intelligent life and the like.
Based on the same inventive concept, an optoelectronic device is also provided in the present invention. The structure of the optoelectronic device will be described below in connection with fig. 2.
FIG. 2 is a schematic structural view of an optoelectronic device provided by the present invention.
In an exemplary embodiment of the present invention, as can be appreciated in connection with FIG. 2, an optoelectronic device 200 may include a vision sensor 100. It can be appreciated that, because the optoelectronic device 200 includes the vision sensor 100, the optoelectronic device 200 can also implement pixel level adjustment of photosensitivity of the device under different illumination conditions, and improve the sensing adaptability of the device, so that the vision sensor can have high resolution and strong detection capability under different illumination conditions.
Based on the same conception, the invention also provides an image recognition method.
Fig. 3 is a schematic flow chart of an image recognition method provided by the invention.
The procedure of the image recognition method will be described with reference to fig. 3.
In an exemplary embodiment of the present invention, the image recognition method may be applied to the vision sensor described in any one of the foregoing embodiments. The visual sensor may include a pair of metal gates, a two-dimensional material layer, a metal source, and a metal drain, among others. As a variant, the image recognition method can also be applied to the optoelectronic device described above.
As can be seen in fig. 3, the image recognition method may include steps 310 to 350, and each step will be described below.
In step 310, an image to be identified and a target illumination intensity in an environment in which the image to be identified is located are obtained.
In step 320, a target voltage difference corresponding to the target illumination intensity is determined based on a preset second mapping table, where the second mapping table includes a mapping relationship between the illumination intensity and the voltage difference.
In step 330, a gate voltage difference is applied to the pair of metal gates based on the target voltage difference to control the charge trapping and de-trapping process in the two-dimensional material layer to match the charge trapping and de-trapping process in the two-dimensional material layer to the target illumination intensity, wherein the gate voltage difference is the same as the target voltage difference.
In one embodiment, an image to be identified may be acquired, along with a target illumination intensity in an environment in which the image to be identified is located. It will be appreciated that the target illumination intensity may correspond to a light fitness or a dark fitness that the vision sensor needs to accommodate.
In yet another example, the target voltage difference corresponding to the target illumination intensity may be determined based on a preset second mapping table. Wherein the target voltage difference may be a gate voltage difference applied to the vision sensor. In this embodiment, by applying a gate voltage difference (corresponding to a target voltage difference) corresponding to the target illumination intensity on the vision sensor, the vision light adaptation and dark adaptation degree of the vision sensor can be effectively controlled, so that the structure and function of light receiving cells and horizontal cells in the retina can be simulated, and the image to be recognized can be effectively detected under different illumination conditions.
It should be noted that the second mapping table may be preset, and the second mapping table includes a plurality of sets of mapping relationships between illumination intensity and voltage difference. The target illumination intensity may be any one illumination intensity in the second mapping table, and the target voltage difference may be any one voltage difference in the second mapping table. In yet another example, the illumination intensity in the second mapping table may have a positive correlation with the voltage difference.
In step 340, a target photocurrent is acquired based on the metal source and the metal drain, wherein the target photocurrent corresponds to the charge trapping and de-trapping process in the two-dimensional material layer.
In step 350, a target image corresponding to the target photocurrent is determined based on the target photocurrent, where the target image is an image after the image to be recognized is recognized.
In one embodiment, a target photocurrent may be obtained from a metal source and a metal drain in the vision sensor, and a target image corresponding to the target photocurrent may be determined based on the target photocurrent.
It should be noted that, when different gate voltage differences are applied to the metal gate pair of the vision sensor, the magnitudes of the target photocurrents acquired by the metal source and the metal drain in the vision sensor are correspondingly changed. Since the gate voltage difference corresponds to the target illumination intensity where the vision sensor is located, the gate voltage difference corresponds to the target photocurrent again, so the metal source electrode and the metal drain electrode acquire the target photocurrent which is generated by adapting to the target illumination intensity where the vision sensor is located.
Further, a target image corresponding to the target current can be directly and rapidly obtained based on the target current, namely the identified image to be identified.
In yet another embodiment, a third mapping table may be preset, where the third mapping table includes a correspondence between photocurrent and image. In the application process, the target image corresponding to the target photocurrent can be directly determined based on the target photocurrent according to the third mapping table.
The image recognition apparatus provided by the present invention will be described below, and the image recognition apparatus described below and the image recognition method described above may be referred to correspondingly to each other.
Through the embodiment, the pixel level adjustment of the photosensitivity of the device under different illumination conditions can be realized by dynamically adjusting and controlling the gate voltage of the metal gate pair in the vision sensor, and the perception adaptability of the device is improved, so that the vision sensor has high resolution and strong detection capability under different illumination conditions. Furthermore, the processing integration and the reading of the image space optical information can be accurately realized, and the efficient sensing and processing of the image can be realized.
Fig. 4 is a schematic structural diagram of an image recognition device provided by the present invention.
The respective modules in the image recognition apparatus will be described with reference to fig. 4.
In an exemplary embodiment of the present invention, the image recognition apparatus may be applied to the vision sensor described in any one of the foregoing embodiments. The visual sensor may include a pair of metal gates, a two-dimensional material layer, a metal source, and a metal drain, among others. As a variant, the image recognition device can also be applied to the optoelectronic device described above.
As can be seen in conjunction with fig. 4, the image recognition device may include a first module 410 to a fifth module 450, each of which will be described below.
The first module 410 may be configured to obtain an image to be identified and a target illumination intensity in an environment in which the image to be identified is located.
The second module 420 may be configured to determine a target voltage difference corresponding to the target illumination intensity based on a preset second mapping table, where the second mapping table includes a mapping relationship between the illumination intensity and the voltage difference.
The third module 430 may be configured to apply a gate voltage difference to the pair of metal gates based on the target voltage difference to control charge trapping and de-trapping processes in the two-dimensional material layer to match the charge trapping and de-trapping processes in the two-dimensional material layer to the target illumination intensity, wherein the gate voltage difference is the same as the target voltage difference.
A fourth module 440 may be configured for obtaining a target photocurrent based on the metal source and the metal drain, wherein the target photocurrent corresponds to a charge trapping and de-trapping process in the two-dimensional material layer.
A fifth module 450 may be configured to determine a target image corresponding to the target photocurrent based on the target photocurrent, wherein the target image is an image after the image to be recognized is recognized.
Fig. 5 illustrates a physical schematic diagram of an electronic device, as shown in fig. 5, which may include: processor 510, communication interface (Communications Interface) 520, memory 530, and communication bus 540, wherein processor 510, communication interface 520, memory 530 complete communication with each other through communication bus 540. Processor 510 may invoke logic instructions in memory 530 to perform an image recognition method applied to a vision sensor comprising a metal gate pair, a two-dimensional material layer, a metal source, and a metal drain, the image recognition method comprising: acquiring an image to be identified and the target illumination intensity in the environment where the image to be identified is located; determining a target voltage difference corresponding to the target illumination intensity based on a preset second mapping table, wherein the second mapping table comprises a mapping relation between the illumination intensity and the voltage difference; applying a gate voltage to the pair of metal gates based on the target voltage difference to control charge trapping and de-trapping processes in the two-dimensional material layer so that the charge trapping and de-trapping processes in the two-dimensional material layer match the target illumination intensity, wherein the gate voltage is the same as the target voltage difference; acquiring a target photocurrent based on the metal source electrode and the metal drain electrode, wherein the target photocurrent corresponds to charge trapping and de-trapping processes in the two-dimensional material layer; and determining a target image corresponding to the target photocurrent based on the target photocurrent, wherein the target image is an image after the image to be identified is identified.
Further, the logic instructions in the memory 530 described above may be implemented in the form of software functional units and may be stored in a computer-readable storage medium when sold or used as a stand-alone product. Based on this understanding, the technical solution of the present invention may be embodied essentially or in a part contributing to the prior art or in a part of the technical solution, in the form of a software product stored in a storage medium, comprising several instructions for causing a computer device (which may be a personal computer, a server, a network device, etc.) to perform all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a magnetic disk, or an optical disk, or other various media capable of storing program codes.
In another aspect, the present invention also provides a computer program product, the computer program product comprising a computer program, the computer program being storable on a non-transitory computer readable storage medium, the computer program, when executed by a processor, being capable of performing the image recognition method provided by the methods described above, the image recognition method being applied to a vision sensor comprising a metal gate pair, a two-dimensional material layer, a metal source and a metal drain, the image recognition method comprising: acquiring an image to be identified and the target illumination intensity in the environment where the image to be identified is located; determining a target voltage difference corresponding to the target illumination intensity based on a preset second mapping table, wherein the second mapping table comprises a mapping relation between the illumination intensity and the voltage difference; applying a gate voltage to the pair of metal gates based on the target voltage difference to control charge trapping and de-trapping processes in the two-dimensional material layer so that the charge trapping and de-trapping processes in the two-dimensional material layer match the target illumination intensity, wherein the gate voltage is the same as the target voltage difference; acquiring a target photocurrent based on the metal source electrode and the metal drain electrode, wherein the target photocurrent corresponds to charge trapping and de-trapping processes in the two-dimensional material layer; and determining a target image corresponding to the target photocurrent based on the target photocurrent, wherein the target image is an image after the image to be identified is identified.
In still another aspect, the present invention also provides a non-transitory computer readable storage medium having stored thereon a computer program which, when executed by a processor, is implemented to perform the image recognition method provided by the above methods, the image recognition method being applied to a vision sensor including a metal gate pair, a two-dimensional material layer, a metal source electrode, and a metal drain electrode, the image recognition method comprising: acquiring an image to be identified and the target illumination intensity in the environment where the image to be identified is located; determining a target voltage difference corresponding to the target illumination intensity based on a preset second mapping table, wherein the second mapping table comprises a mapping relation between the illumination intensity and the voltage difference; applying a gate voltage to the pair of metal gates based on the target voltage difference to control charge trapping and de-trapping processes in the two-dimensional material layer so that the charge trapping and de-trapping processes in the two-dimensional material layer match the target illumination intensity, wherein the gate voltage is the same as the target voltage difference; acquiring a target photocurrent based on the metal source electrode and the metal drain electrode, wherein the target photocurrent corresponds to charge trapping and de-trapping processes in the two-dimensional material layer; and determining a target image corresponding to the target photocurrent based on the target photocurrent, wherein the target image is an image after the image to be identified is identified.
The apparatus embodiments described above are merely illustrative, wherein the elements illustrated as separate elements may or may not be physically separate, and the elements shown as elements may or may not be physical elements, may be located in one place, or may be distributed over a plurality of network elements. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art will understand and implement the present invention without undue burden.
From the above description of the embodiments, it will be apparent to those skilled in the art that the embodiments may be implemented by means of software plus necessary general hardware platforms, or of course may be implemented by means of hardware. Based on this understanding, the foregoing technical solution may be embodied essentially or in a part contributing to the prior art in the form of a software product, which may be stored in a computer readable storage medium, such as ROM/RAM, a magnetic disk, an optical disk, etc., including several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute the method described in the respective embodiments or some parts of the embodiments.
It will further be appreciated that although operations are depicted in the drawings in a particular order, this should not be understood as requiring that such operations be performed in the particular order shown or in sequential order, or that all illustrated operations be performed, to achieve desirable results. In certain circumstances, multitasking and parallel processing may be advantageous.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A vision sensor, the vision sensor comprising: a substrate, an oxide layer, a metal gate pair, a first dielectric layer, a metal source, a metal drain, a two-dimensional material layer, and a second dielectric layer, wherein,
the oxide layer is stacked on the upper end of the substrate;
the metal gate pair is stacked at a first site at the upper end of the oxide layer, wherein the upper end of the oxide layer comprises the first site, a second site and a third site, the second site and the third site are distributed at two sides of the first site, and the metal gate pair is used for receiving an applied voltage to form a gate voltage difference so as to control charge trapping and de-trapping processes in the two-dimensional material layer;
the first dielectric layer is stacked on the upper end of the metal electrode pair and is stacked on the upper end of the second site and the upper end of the third site, so that the first dielectric layer is in a convex shape;
the metal source electrode and the metal drain electrode are respectively stacked at the upper end of the first dielectric layer and distributed at two sides of the metal gate pair;
the two-dimensional material layer is stacked at the upper end of the first dielectric layer and at the upper ends of the metal source electrode and the metal drain electrode, wherein the two-dimensional material layer is a two-dimensional material layer with charge defect introduced;
the second dielectric layer is stacked on top of the two-dimensional material layer.
2. The vision sensor of claim 1, wherein the two-dimensional material layer is a thin film structure composed of one or more of a graphene layer that introduces a charge defect state, a transition metal chalcogenide layer that introduces a charge defect state, a two-dimensional tellurium molecule layer that introduces a charge defect state, or a transition metal chalcogenide heterojunction that introduces a charge defect state.
3. The vision sensor of claim 1, wherein the oxide layer comprises a silicon dioxide layer.
4. The visual sensor of claim 1, wherein the first dielectric layer and/or the second dielectric layer comprises one or more of aluminum oxide, silicon nitride, or hexagonal boron nitride.
5. The vision sensor of claim 1, further comprising:
the processing module is used for determining a target image corresponding to the target photocurrent through a preset first mapping table based on the target photocurrent collected by the metal source electrode and the metal drain electrode, wherein the target photocurrent is determined based on the image to be identified perceived by the two-dimensional material layer, and the first mapping table comprises a mapping relation between the photocurrent and the image.
6. An optoelectronic device comprising the vision sensor of any one of claims 1 to 5.
7. An image recognition method applied to the vision sensor of any one of claims 1 to 5, the vision sensor including a pair of metal gates, a two-dimensional material layer, a metal source, and a metal drain, the image recognition method comprising:
acquiring an image to be identified and the target illumination intensity in the environment where the image to be identified is located;
determining a target voltage difference corresponding to the target illumination intensity based on a preset second mapping table, wherein the second mapping table comprises a mapping relation between the illumination intensity and the voltage difference;
applying a gate voltage difference to the metal gate pair based on the target voltage difference to control charge trapping and de-trapping processes in the two-dimensional material layer to match charge trapping and de-trapping processes in the two-dimensional material layer to the target illumination intensity, wherein the gate voltage difference is the same as the target voltage difference;
acquiring a target photocurrent based on the metal source electrode and the metal drain electrode, wherein the target photocurrent corresponds to a charge trapping and de-trapping process in the two-dimensional material layer;
and determining a target image corresponding to the target photocurrent based on the target photocurrent, wherein the target image is an image after the image to be identified is identified.
8. An image recognition device, characterized in that the image recognition device is applied to the vision sensor of any one of claims 1 to 5, the vision sensor including a metal gate pair, a two-dimensional material layer, a metal source, and a metal drain, the image recognition device comprising:
the first module is used for acquiring an image to be identified and target illumination intensity in an environment where the image to be identified is located;
the second module is used for determining a target voltage difference corresponding to the target illumination intensity based on a preset second mapping table, wherein the second mapping table comprises a mapping relation between the illumination intensity and the voltage difference;
a third module for applying a gate voltage difference to the metal gate pair based on the target voltage difference to control a charge trapping and de-trapping process in the two-dimensional material layer to match the charge trapping and de-trapping process in the two-dimensional material layer to the target illumination intensity, wherein the gate voltage difference is the same as the target voltage difference;
a fourth module, configured to obtain a target photocurrent based on the metal source and the metal drain, where the target photocurrent corresponds to a charge trapping and de-trapping process in the two-dimensional material layer;
and a fifth module, configured to determine, based on the target photocurrent, a target image corresponding to the target photocurrent, where the target image is an image after the image to be identified is identified.
9. An electronic device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, wherein the processor implements the image recognition method of claim 7 when executing the program.
10. A non-transitory computer readable storage medium, on which a computer program is stored, which when executed by a processor implements the image recognition method according to claim 7.
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