CN115455037A - Database access management method based on nonvolatile memory device - Google Patents
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Abstract
The invention provides a database access management method based on a nonvolatile memory device, which comprises the following steps: a control unit of a nonvolatile memory device receives a query request of a database; the control unit verifies whether the query request is registered by the database access management unit or not, and outputs a query request result or sends a re-input prompt; and searching according to the query request through the memory index, the bitmap index and the dictionary index, and outputting the result of the query request. The initial judgment of the query request is beneficial to saving operation programs, reducing the load of the database access management unit, saving larger space for processing the registered query request, shortening the query time to a certain extent and ensuring the accuracy of the query result; because the nonvolatile memory device has the advantages of high stability and difficult data loss, the storage of the query request is convenient for managing the terminal query, and the reference is provided for the database access management unit to make up for a bug or increase the registered query request.
Description
Technical Field
The invention relates to the technical field of database management, in particular to a database access management method based on a nonvolatile memory device.
Background
The nonvolatile memory device has wide application in the storage field, and has high reliability and stored data is not easy to lose,
in the prior art, a method and a device for managing access to database files in multiple update areas of a CN201210210037.8 navigation map include the following steps: registering query requests used by each navigation function module and used for querying a database in a database access management unit; the database access management unit distributes a query request ID for the registered query request; each navigation function module uses the inquiry request ID for data access.
In the second prior art, a CN202010164911.3 database access management system includes: the system comprises a database routing management layer and a database deployed at the cloud end, wherein the database routing management layer comprises routers with set quantity, and the set quantity is the same as the quantity of the databases deployed at the cloud end; each router manages a database of the cloud in a one-to-one correspondence mode, each database is marked as a main database in a corresponding router, each router also manages a standby database in a one-to-one correspondence mode, and the standby database is a database which is deployed at the cloud and is different from the main database in the router to which the standby database belongs; and the router is used for controlling the managed standby library to respond to the database access request so as to realize data write access of the external service application to the standby library if the managed main library is monitored to be in a downtime state when the database access request of the external service application is received. The realization of the external service application is not affected by the downtime of the database, and the stability of the system is improved.
Third, CN200510127058.3 database access management system and method, by providing a system and method that allows a network administrator to restrict certain system users from accessing information from certain public or other uncontrolled databases. A relational database is used to determine access rights and administrators can easily update and modify this database. Within this relational database, specific resource identifiers are sorted into specific access groups. If the resource identifier is in an access group where the administrator assigns users specific rights, the relational database is organized so that each user of the system only transmits requests for specific resources from the local network to servers providing links to the public/uncontrolled database.
The problems that the processing speed of the query request is low, the efficiency is low, the stability of a database access management system is poor and data is easy to lose exist in the prior art I, the prior art II and the prior art III, so that the query request of the data is processed by adopting a nonvolatile memory device, the initial judgment of the query request is beneficial to saving an operation program, and the query time is shortened; the registered query request is stored in a storage unit of the nonvolatile memory device, and a reference is provided for the database access management unit to make up for a bug or increase the registered query request, so that the customer experience is improved.
Disclosure of Invention
In order to solve the above technical problem, the present invention provides a database access management method based on a nonvolatile memory device, including the following steps:
a control unit of a nonvolatile memory device receives a query request of a database;
the control unit verifies whether the query request is registered by the database access management unit or not, and outputs a query request result or sends a re-input prompt;
and searching according to the query request through the memory index, the bitmap index and the dictionary index, and outputting the result of the query request.
Optionally, the control unit checks that the query request is a query request registered by the database access management unit, stores the query request in a storage unit of the nonvolatile memory device, performs lookup according to the query request through the memory index, the bitmap index and the dictionary index, and outputs a result of the query request.
Optionally, the control unit checks that the query request is not a query request registered by the database access management unit, sends a prompt for re-inputting the query request, and returns the query request to the control unit of the nonvolatile memory device to receive the query request of the database.
Optionally, the processing of the query request includes:
the information of the inquiry request read by the sense amplifier is transmitted to a volatile memory cell of the nonvolatile memory device through a data line;
the volatile memory unit is configured with a first volatile memory having a static random access memory configuration and a second volatile memory configured with an under-voltage latch circuit connected in parallel with the data line, in response to identification information associated with the inquiry request.
Optionally, the connection of the voltage limiting circuit of the sense amplifier is: the output end of the control unit is connected with the input end of a sense amplifier, the output end of the sense amplifier is connected with one end of a resistor R1 and the anode of a backflow prevention diode D1, the other end of the resistor R1 is connected with the drain electrode of a transistor MN0, the source electrode of the transistor MN0 is connected with the cathode of a voltage stabilizing diode D0, the anode of the voltage stabilizing diode D0 is connected with a GND end, the grid electrode of the transistor MN0 is connected with the drain electrode of the transistor MN1, the grid electrode of the transistor MN1 is connected with the cathode of the backflow prevention diode D1, and the source electrode and the drain electrode of the transistor MN1 are connected with a volatile storage unit.
Optionally, the specific connection of the under-voltage latch circuit is as follows: voltage input point VDD and source electrode of field effect transistor M1, transistor Q 3 Emitter, bias current I bias One terminal of (1), resistance R 5 One end of the constant current source active load of the band-gap reference is connected with a band-gap reference voltage source of the two tubes, and the bias current I bias The other end of the first electrode is positioned at the drain electrode and the field effect of the field effect transistor M2Transistor Q responsive to the connection of the gate of transistor M2 and the gate of field effect transistor M3 3 The collector of the inverter is connected with the input end of the inverter INV1, the drain of the field effect transistor M3 and the grid of the field effect transistor M4, the grid of the field effect transistor M1 is connected with the output end of the inverter INV1 and the input end of the inverter INV2, and the output end of the inverter INV2 is connected with the second volatile memory and the resistor R 8 Is connected to the drain of the field effect transistor M2 and the resistor R 5 Another terminal of (1) and a resistor R 6 Is connected to a resistor R 6 Another terminal of (1) and a resistor R 7 One end of the constant current source is connected with a two-tube band-gap reference voltage source, and a constant current source active load of band-gap reference and a transistor Q 3 The base electrode of the transistor is connected with a two-tube band-gap reference voltage source, the source electrode of the field effect tube M2, the source electrode of the field effect tube M3, the source electrode of the field effect tube M4, the drain electrode of the field effect tube M4 and the resistor R 8 Another terminal of (1), a resistor R 7 And the other end of the second terminal is connected with the GND terminal.
Optionally, the built-in circuit of the constant current source active load of the bandgap reference includes: resistance R 4 Resistance R 3 Field-effect transistor M5 and field-effect transistor M6: resistance R 4 Is connected with the source electrode of the field effect transistor M5, and a resistor R 3 One end of the first electrode is connected with the source electrode of a field effect tube M6, and the base electrode of a field effect tube M5 is connected with the base electrode of the field effect tube M6; resistance R 4 And a resistance R 3 The other end of the first switch is connected with a voltage input point VDD;
the built-in circuit of the two-tube band-gap reference voltage source comprises: transistor Q 1 Resistance R 2 Resistance R 9 And a transistor Q 2 (ii) a Transistor Q 1 And a transistor Q 2 Is connected with a constant current source active load of a band gap reference, a transistor Q 1 Emitter and resistor R of 2 Is connected to a resistor R 2 And the other end of (1) and a transistor Q 1 Emitter and resistor R of 9 Is connected to one terminal of a transistor Q 1 Base and transistor Q 2 Base connection of (3), resistor R 9 And the other end of the second terminal is connected with the GND terminal.
Optionally, when the control unit receives the query request, the control unit sends the query request to the database access management unit to instruct the database access management unit to determine whether the query request is a registered query request according to the query request;
receiving a judgment result from the database access management unit;
determining whether to store the query request to a storage unit of the nonvolatile memory device or send a re-input prompt of the query request according to the judgment result;
if the query request is registered, querying the database according to the query request; if the query request is not the registered query request, sending a re-input prompt of the query request, and displaying re-input on the display interface.
Optionally, the query request for registration includes: a particular request to retrieve, create, modify, or delete.
Optionally, the method for tuning the memory index, the bitmap index, and the dictionary index includes:
dividing the query request into a read query and a write query according to the operation mode of the query request, and analyzing each query in the registered query request;
for field sets which belong to the same data table and are generated by the analysis result of the query request, the combination of any field is used as a candidate index;
and selecting an index set with the total index size not exceeding a user given space threshold from the candidate indexes, wherein the index set at least comprises one of a memory index, a bitmap index and a dictionary index, and quantifying the action of the index by defining an index practical value so as to maximize the query optimization effect of the optimized index set.
The invention adopts the nonvolatile memory device to process the query request of the data and verify whether the query request is the query request registered by the database access management unit, the initial judgment of the query request is beneficial to saving the operation program, the load of the database access management unit is reduced, a larger space can be saved for processing the registered query request, the query time is shortened to a certain extent, and the accuracy of the query result is ensured; the registered query request is stored in the storage unit of the nonvolatile memory device, and the nonvolatile memory device has the advantages of high stability and difficulty in data loss, so that the storage of the query request is convenient for managing terminal query, and references are provided for the database access management unit to make up for bugs or increase the registered query request, and the customer experience is improved; in addition, the invention adopts three index modes of memory index, bitmap index and dictionary index to search according to the query request, the three index modes can ensure the uniqueness of each row of data in the database table by creating the uniqueness index, greatly accelerate the retrieval speed of the data, accelerate the connection between the table and the table, also obviously reduce the grouping and sorting time in the query when using the grouping and sorting clauses to search the data, and by using the indexes, an optimized hiding device can be used in the query process, thereby improving the performance of the database access management unit.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a flow chart of a database access management method based on a non-volatile memory device according to an embodiment of the present invention;
FIG. 2 is a flow chart illustrating the processing of a query request according to an embodiment of the present invention;
FIG. 3 is a diagram of the voltage limiting circuit of the sense amplifier according to the embodiment of the present invention;
FIG. 4 is a diagram of the under-voltage latch circuit according to the embodiment of the present invention.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it should be understood that they are presented herein only to illustrate and explain the present invention and not to limit the present invention.
The terminology used in the embodiments of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the embodiments of the present application. As used in the examples of this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the application, as detailed in the claims that follow. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
Example 1
As shown in fig. 1, an embodiment of the present invention provides a database access management method based on a nonvolatile memory device, including the following steps:
s100: a control unit of a nonvolatile memory device receives a query request of a database;
s200: the control unit verifies whether the query request is a query request registered by the database access management unit; if yes, saving the data to a storage unit of the nonvolatile memory device, and performing step S300, otherwise, sending a re-input prompt of the query request, and returning to step S100;
s300: and searching according to the query request through the memory index, the bitmap index and the dictionary index, and outputting the result of the query request.
The working principle and the beneficial effects of the technical scheme are as follows: the invention adopts the nonvolatile memory device to process the query request of the data and verify whether the query request is the query request registered by the database access management unit, the initial judgment of the query request is beneficial to saving the operation program, the load of the database access management unit is reduced, a larger space can be saved for processing the registered query request, the query time is shortened to a certain extent, and the accuracy of the query result is ensured; the registered query request is stored in the storage unit of the nonvolatile memory device, and the nonvolatile memory device has the advantages of high stability and difficulty in data loss, so that the storage of the query request is convenient for managing terminal query, and references are provided for the database access management unit to make up for bugs or increase the registered query request, and the customer experience is improved; in addition, the invention adopts three index modes of memory index, bitmap index and dictionary index to search according to the query request, the three index modes can ensure the uniqueness of each row of data in the database table by creating the uniqueness index, thereby greatly accelerating the data retrieval speed, accelerating the connection between the table and the table, also obviously reducing the grouping and sorting time in the query when using the grouping and sorting clause to search the data, and using the optimized hiding device to improve the performance of the database access management unit in the query process by using the index.
Example 2
As shown in fig. 2, on the basis of embodiment 1, the processing of the query request in step S100 according to the embodiment of the present invention includes:
s101: the information of the inquiry request read by the sense amplifier is transmitted to a volatile memory cell of the nonvolatile memory device through a data line;
s102: the volatile memory unit is configured with a first volatile memory having a static random access memory configuration and a second volatile memory configured with an under-voltage latch circuit connected in parallel with the data line, in response to identification information associated with the inquiry request.
The working principle and the beneficial effects of the technical scheme are as follows: the volatile memory unit of the present invention is configured with a first volatile memory having a static random access memory configuration and a second volatile memory configured with a latch circuit connected in parallel with a data line, and writes and reads operation information with respect to the first volatile memory in response to identification information associated with an inquiry request, and writes operation information that must be continuously accessed in response to the identification information into the second volatile memory unit; the invention processes the query request, reduces the load pressure of the database access management unit, is beneficial to realizing the reasonable distribution of the equipment and has great promotion effect on the identification of the query request.
Example 3
As shown in fig. 3, based on embodiment 2, the voltage limiting circuit of the sense amplifier provided by the embodiment of the present invention is connected as follows: the output end of the control unit is connected with the input end of a sense amplifier, the output end of the sense amplifier is connected with one end of a resistor R1 and the anode of a backflow prevention diode D1, the other end of the resistor R1 is connected with the drain electrode of a transistor MN0, the source electrode of the transistor MN0 is connected with the cathode of a voltage stabilization diode D0, the anode of the voltage stabilization diode D0 is connected with a GND end, the gate electrode of the transistor MN0 is connected with the drain electrode of the transistor MN1, the gate electrode of the transistor MN1 is connected with the cathode of the backflow prevention diode D1, and the source electrode and the drain electrode of the transistor MN1 are connected with a volatile storage unit.
The working principle and the beneficial effects of the technical scheme are as follows: when the input voltage exceeds the sum of the voltage-stabilizing value of the voltage-stabilizing diode D0 and the threshold voltage of the transistor MN0, the transistor MN0 is conducted, the voltage-stabilizing diode D0 is broken down, and the voltages at the two ends of the voltage-stabilizing diode D0 are stabilized at the voltage-stabilizing value; when the input voltage does not exceed the sum of the voltage-stabilizing value of the voltage-stabilizing diode D0 and the threshold voltage of the transistor MN0, the transistor MN0 is not conducted; the grid electrode of the transistor MN1 is connected with reference voltage, the drain electrode of the transistor MN1 is connected with input voltage, the source electrode of the transistor MN1 is used as an output end, and the driving capability of the transistor MN1 is adjusted by adjusting the width-length ratio and the grid-source voltage drop of the transistor MN1, so that the instantaneous driving current of the transistor MN1 can be directly equal to the maximum output current of the volatile memory unit. The voltage limiting circuit ensures the stable work of the read amplifier, the stable output voltage and the stability of the volatile memory unit, and has simple structure, low cost, stability and reliability.
Example 4
As shown in fig. 4, on the basis of embodiment 2, the specific connections of the under-voltage latch circuit provided in the embodiment of the present invention are: voltage input point VDD and source electrode of field effect transistor M1, transistor Q 3 Emitter, bias current I bias One end of (1), a resistor R 5 One end of the band-gap reference constant current source is connected with a constant current source active load 1 of the band-gap reference and a two-tube band-gap reference voltage source 2, and the bias current I bias The other end of the first transistor is connected with the drain electrode of the field effect transistor M2, the grid electrode of the field effect transistor M2 and the grid electrode of the field effect transistor M3, and the transistor Q 3 The collector of the inverter is connected with the input end of the inverter INV1, the drain of the field effect transistor M3 and the grid of the field effect transistor M4, the grid of the field effect transistor M1 is connected with the output end of the inverter INV1 and the input end of the inverter INV2, and the output end of the inverter INV2 is connected with the second volatile memory and the resistor R 8 Is connected to the drain of the field effect transistor M2 and the resistor R 5 Another terminal of (1) and a resistor R 6 Is connected to a resistor R 6 The other end of (2) and a resistor R 7 One end of the constant current source is connected with a two-tube band-gap reference voltage source 2, and a constant current source active load 1 of band-gap reference and a transistor Q 3 The base electrode of the transistor is connected with a two-tube band-gap reference voltage source 2, the source electrode of a field effect tube M3, the source electrode of a field effect tube M4, the drain electrode of the field effect tube M4 and a resistor R 8 Another end of (3), a resistor R 7 And the other end of the second terminal is connected with the GND terminal.
The built-in circuit of the constant current source active load 1 of the band gap reference includes: resistance R 4 Resistance R 3 Field-effect transistor M5 and field-effect transistor M6: resistance R 4 Is connected with the source electrode of the field effect transistor M5, a resistor R 3 One end of the first electrode is connected with the source electrode of a field effect tube M6, and the base electrode of a field effect tube M5 is connected with the base electrode of the field effect tube M6; resistance R 4 And a resistance R 3 The other end of the first switch is connected with a voltage input point VDD;
the built-in circuit of the two-tube band-gap reference voltage source 2 comprises: transistor Q 1 And a resistor R 2 Resistance R 9 And a transistor Q 2 (ii) a Transistor Q 1 And a transistor Q 2 Is connected with a constant current source active load of a band gap reference, a transistor Q 1 Emitter and resistor R of 2 Is connected to a resistor R 2 And the other end of (1) and a transistor Q 1 Emitter and resistor R of 9 Is connected to one terminal of a transistor Q 1 Base and transistor Q 2 Base connection of (3), resistor R 9 And the other end of the second terminal is connected with the GND terminal.
The working principle and the beneficial effects of the technical scheme are as follows: when V is FB ＜V REF Time-flow through transistor Q 1 Current of (I) C1 Smaller than the flow-through transistor Q 2 Current of (I) C2 . The potential at the early effect C is lower than that at equilibrium to maintain the circuit in equilibrium, assuming no current is flowing at the output C; when V is FB ＞V REF Flows through the transistor Q 1 Current of (I) C1 Greater than the flow-through transistor Q 2 Current of (I) C2 And the potential at C is higher than the potential at the balance so as to maintain the balance of the circuit. The hysteresis interval of the undervoltage latch circuit is not influenced by the working temperature of the second volatile memory, has good stability and low power consumption, and meets the requirement of the second volatile memory.
Example 5
On the basis of embodiment 1, step S200 provided in the embodiment of the present invention specifically includes:
when the control unit receives the query request, the control unit sends the query request to the database access management unit to indicate the database access management unit to judge whether the query request is a registered query request or not according to the query request;
receiving a judgment result from the database access management unit;
determining whether to store the query request to a storage unit of the nonvolatile memory device or send a re-input prompt of the query request according to the judgment result;
if the query request is registered, querying the database according to the query request; if the query request is not the registered query request, sending a re-input prompt of the query request, and displaying re-input on the display interface.
The registered query request includes: a particular request to retrieve, create, modify, or delete.
The working principle and the beneficial effects of the technical scheme are as follows: the control unit of the invention verifies whether the query request is the query request registered by the database access management unit; if yes, storing the data in a storage unit of the nonvolatile memory device, and if not, sending a re-input prompt of the query request; the query request is sent to the database access management unit to indicate the database access management unit to judge whether the query request is a registered query request or not according to the query request, so that the preliminary screening of the query request is realized, the access efficiency of the database is improved, the query result is improved, and the safety of data stored in the database is also ensured.
Example 6
On the basis of embodiment 1, the method for tuning the memory index, the bitmap index and the dictionary index provided by the embodiment of the present invention includes:
dividing the query request into a read query and a write query according to the operation mode of the query request, and analyzing each query in the registered query requests; the parsing process comprises lexical analysis and syntactic analysis: when the lexical/syntactic analysis is completed by adopting an open-source lexical analyzer and a syntactic analyzer, the system can simultaneously check whether the analyzed SQL query conforms to the lexical and syntactic rules of the query language; the analyzed query is represented in a form of an analysis tree, and the projection, selection and sequencing on the corresponding query request are obtained through the analysis tree, and the used field combination is operated;
for a field set which is generated by the analysis result of the query request and belongs to the same data table, the combination of any field is used as a candidate index;
and selecting an index set with the total index size not exceeding a user given space threshold from the candidate indexes, wherein the index set at least comprises one of a memory index, a bitmap index and a dictionary index, and quantifying the action of the index by defining an index practical value so as to maximize the query optimization effect of the optimized index set.
The working principle and the beneficial effects of the technical scheme are as follows: the method comprises the steps of dividing the operation mode of a query request into a read query and a write query, and analyzing each query in the registered query request; for field sets which belong to the same data table and are generated by the analysis result of the query request, the combination of any field is used as a candidate index; the method comprises the steps of selecting an index set with the total index size not exceeding a user given space threshold from candidate indexes, wherein the index set at least comprises one of a memory index, a bitmap index and a dictionary index, quantifying the index effect by defining index practical values, maximizing the query optimization effect of the optimized index set, and realizing the maximization of data query speed and the intellectualization of database access management by optimizing and adjusting the memory index, the bitmap index and the dictionary index.
Example 7
On the basis of embodiment 5, the display interface provided by the embodiment of the present invention is configured to ensure that the color saturation of the display prompting re-input is normal, and correct the color saturation through a mathematical model to avoid the influence of the environment on the display effect, where the mathematical model is as follows:
S c ＝S+t(V c -V)ε
in the formula, S c Representing the corrected saturation component, V c Denotes a luminance component after correction, t denotes a constant, ∈ is a correction coefficient, S denotes a saturation component before correction, V denotes a luminance component before correction, (x, y) denotes a position of a correction point, ∈ (x, y) denotes a correction coefficient of the correction point (x, y), Ω denotes a set of all display positions of the display interface,
and
respectively represent the average of the brightness and saturation of all points in the neighborhood of the position of the correction point, V (i, j) and S (i, j) respectively represent the brightness and saturation of all points in the neighborhood of the position of the correction point, delta V (x, y) represents the variance of the luminance of the position of the correction point, δ S (x, y) represents the saturation power of the position of the correction pointThe difference, (i, j) is the coordinate of the pixel point in the neighborhood.
The working principle and the beneficial effects of the technical scheme are as follows: the display interface is used for displaying the prompt of re-input, so that the color saturation displayed by the prompt of re-input is ensured to be normal, the color saturation is further prevented from being influenced by the environment, the display effect is prevented from being corrected through the mathematical model, the accuracy of result display is improved through correction, the problem that the color saturation of the display interface is poor due to environmental factors is avoided, the experience of a customer on equipment is easily reduced, the color saturation is improved after the mathematical model is adopted for correction, and the normal display interface is ensured.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A database access management method based on a nonvolatile memory device is characterized by comprising the following steps:
a control unit of a nonvolatile memory device receives a query request of a database;
the control unit verifies whether the query request is registered by the database access management unit or not, and outputs a query request result or sends a re-input prompt;
and searching according to the query request through the memory index, the bitmap index and the dictionary index, and outputting the result of the query request.
2. The database access management method based on a nonvolatile memory device according to claim 1, wherein the control unit verifies that the query request is a query request registered by the database access management unit, stores the query request in the storage unit of the nonvolatile memory device, performs lookup according to the query request through the memory index, the bitmap index and the dictionary index, and outputs a result of the query request.
3. The database access management method based on nonvolatile memory devices according to claim 1, wherein the control unit verifies that the query request is not a query request registered by the database access management unit, and sends a prompt for re-inputting the query request, and the control unit returning to the nonvolatile memory device receives the query request of the database.
4. The non-volatile memory device-based database access management method according to claim 1, wherein the processing of the query request comprises:
the information of the inquiry request read by the sense amplifier is transmitted to a volatile memory cell of the nonvolatile memory device through a data line;
the volatile memory unit is configured with a first volatile memory having a static random access memory configuration and a second volatile memory configured with an under-voltage latch circuit connected in parallel with the data line, in response to identification information associated with the inquiry request.
5. The database access management method based on nonvolatile memory device according to claim 4, wherein the connection of the voltage limiting circuit of the sense amplifier is: the output end of the control unit is connected with the input end of a sense amplifier, the output end of the sense amplifier is connected with one end of a resistor R1 and the anode of a backflow prevention diode D1, the other end of the resistor R1 is connected with the drain electrode of a transistor MN0, the source electrode of the transistor MN0 is connected with the cathode of a voltage stabilizing diode D0, the anode of the voltage stabilizing diode D0 is connected with a GND end, the grid electrode of the transistor MN0 is connected with the drain electrode of the transistor MN1, the grid electrode of the transistor MN1 is connected with the cathode of the backflow prevention diode D1, and the source electrode and the drain electrode of the transistor MN1 are connected with a volatile storage unit.
6. The database access management method based on nonvolatile memory devices according to claim 4, wherein the specific connection of the under-voltage latch circuit is as follows: voltage input point VDD and source electrode of field effect transistor M1, transistor Q 3 Emitter, bias current I bias One terminal of (1), resistance R 5 One end of the constant current source active load of the band-gap reference is connected with a band-gap reference voltage source of the two tubes, and the bias current I bias The other end of the first transistor is connected with the drain electrode of the field effect transistor M2, the grid electrode of the field effect transistor M2 and the grid electrode of the field effect transistor M3, and the transistor Q 3 The collector of the inverter is connected with the input end of an inverter INV1, the drain of a field effect transistor M3 and the grid of a field effect transistor M4, the grid of the field effect transistor M1 is connected with the output end of the inverter INV1 and the input end of an inverter INV2, and the output end of the inverter INV2 is connected with a second volatile memory and a resistor R 8 Is connected to the drain of the field effect transistor M2 and the resistor R 5 Another terminal of (1) and a resistor R 6 Is connected to a resistor R 6 Another terminal of (1) and a resistor R 7 One end of the band-gap reference is connected with a band-gap reference voltage source of the two tubes, and a constant current source active load of the band-gap reference and a transistor Q 3 The base electrode of the transistor is connected with a two-tube band-gap reference voltage source, the source electrode of the field effect tube M2, the source electrode of the field effect tube M3, the source electrode of the field effect tube M4, the drain electrode of the field effect tube M4 and the resistor R 8 Another terminal of (1), a resistor R 7 And the other end of the second terminal is connected with the GND terminal.
7. The database access management method based on nonvolatile memory devices of claim 6, wherein the built-in circuit of the constant current source active load of the bandgap reference comprises: resistance R 4 Resistance R 3 Field-effect transistor M5 and field-effect transistor M6: resistance R 4 Is connected with the source electrode of the field effect transistor M5, and a resistor R 3 One end of the first electrode is connected with the source electrode of a field effect tube M6, and the base electrode of a field effect tube M5 is connected with the base electrode of the field effect tube M6; resistance R 4 And a resistance R 3 The other end of the first switch is connected with a voltage input point VDD;
the built-in circuit of the two-tube band-gap reference voltage source comprises: transistor Q 1 Resistance R 2 Resistance R 9 And a transistor Q 2 (ii) a Transistor Q 1 And a transistor Q 2 Is connected with a constant current source active load of band-gap reference, a transistor Q 1 Emitter and resistor R of 2 Is connected to a resistor R 2 And the other end of (1) and a transistor Q 1 Emitter and resistor R of 9 Is connected to one terminal of a transistor Q 1 Base and transistor Q 2 Base connection of (3), resistor R 9 And the other end of the second terminal is connected with the GND terminal.
8. The database access management method based on the nonvolatile memory device according to claim 1, wherein when the control unit receives the query request, the control unit sends the query request to the database access management unit to instruct the database access management unit to determine whether the query request is a registered query request according to the query request;
receiving a judgment result from the database access management unit;
determining whether to store the query request to a storage unit of the nonvolatile memory device or send a re-input prompt of the query request according to the judgment result;
if the query request is registered, querying the database according to the query request; if the query request is not the registered query request, sending a re-input prompt of the query request, and displaying re-input on the display interface.
9. The non-volatile memory device-based database access management method according to claim 8, wherein the query request for registration includes: a particular request to retrieve, create, modify, or delete.
10. The database access management method based on nonvolatile memory device according to claim 1, wherein the tuning method of the memory index, the bitmap index and the dictionary index comprises:
dividing the query request into a read query and a write query according to the operation mode of the query request, and analyzing each query in the registered query request;
for field sets which belong to the same data table and are generated by the analysis result of the query request, the combination of any field is used as a candidate index;
and selecting an index set with the total index size not exceeding a user given space threshold from the candidate indexes, wherein the index set at least comprises one of a memory index, a bitmap index and a dictionary index, and quantifying the action of the index by defining an index practical value so as to maximize the query optimization effect of the optimized index set.
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