CN115449895A - Device for doping mother alloy - Google Patents
Device for doping mother alloy Download PDFInfo
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- CN115449895A CN115449895A CN202211054249.1A CN202211054249A CN115449895A CN 115449895 A CN115449895 A CN 115449895A CN 202211054249 A CN202211054249 A CN 202211054249A CN 115449895 A CN115449895 A CN 115449895A
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- China
- Prior art keywords
- container
- doping
- master alloy
- transverse plate
- barrel
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a device for supplementing and doping master alloy. Compared with the existing shoulder lifting doping, the shoulder lifting is not needed, so that the doping efficiency can be effectively improved through the doping mother alloy supplementing device, the yield of monocrystalline silicon is further improved, and the doping cost can be effectively reduced.
Description
Technical Field
The invention relates to the technical field of single crystal production, in particular to a device for supplementing a doped master alloy.
Background
The monocrystalline silicon czochralski furnace is a device for producing monocrystalline silicon by the czochralski method, and the working principle of the monocrystalline silicon czochralski furnace is that polycrystalline silicon materials are placed in a thermal field of the monocrystalline silicon czochralski furnace, heated to 1400-1700 ℃ under the protection of inert gas, the polycrystalline silicon materials are melted, and crystal grains grow up under the traction of seed crystals to form a monocrystalline silicon rod. The resistance of the silicon single crystal rod is one of important electrical properties of the single crystal, in the preparation process of the single crystal, in order to ensure that the resistance of the silicon single crystal rod is within a control range, a shoulder is required to be lifted for supplement doping, namely, the seed crystal is inserted into the liquid level, when the shoulder diameter reaches about 100mm, the shoulder is lifted out, and then the mother alloy is placed on the shoulder and is dissolved back to the liquid level again.
However, in the existing shoulder-lifting and doping process, when the diameter of the shoulder is about 100mm, the shoulder is lifted, and then the master alloy is placed on the shoulder and re-dissolved back to the liquid level, so that the shoulder-lifting and doping process needs a long time, further a large amount of time is wasted, and the yield of the monocrystalline silicon is seriously influenced.
Disclosure of Invention
In view of this, the embodiment of the invention provides a device for doping a mother alloy, so as to solve the problem that a lot of time is wasted and the production yield is affected due to the fact that doping is carried out by lifting shoulders when single crystal silicon is produced.
In order to achieve the above object, the embodiments of the present invention provide the following technical solutions:
a device for supplementing master alloy, comprising: the device comprises a connecting piece and a container for containing a doping agent;
the container is made of silicon;
the upper part of the connecting piece is used for connecting with the heavy hammer, and the lower part of the connecting piece is used for connecting with the container.
Further, a connector, comprising: the device comprises a barrel, a connecting column and a transverse plate;
the upper part of the cylinder body is provided with an internal thread connected with the heavy hammer, and the lower part of the cylinder body is connected with the transverse plate through a connecting column;
the upper part of the container is clamped with the transverse plate.
Furthermore, the container is of a square structure, and a feed inlet is formed in the upper end face of the container.
Furthermore, a clamping groove matched with the transverse plate is formed in one side of the container in the horizontal direction.
Further, the diameter of the internal thread of the cylinder is 20mm to 40mm.
Further, barrel, spliced pole and diaphragm formula structure as an organic whole.
Furthermore, the connecting piece is made of graphite materials.
Further, a cylindrical cavity is arranged in the container.
The invention provides a doping mother alloy supplementing device, wherein a container for containing a doping agent is made of silicon, the doping agent is contained in the container when the doping is needed, the container is connected below a heavy hammer through a connecting piece and then is hung into a furnace, the container can be immersed into a silicon solution under the action of the heavy hammer, and the container can be slowly melted under the action of high temperature until the doping agent in the container is dissolved in the silicon solution.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a device for doping a master alloy according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a connector according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a container according to an embodiment of the present invention.
Wherein, connecting piece 1, barrel 11, spliced pole 12, diaphragm 13, container 2, draw-in groove 21.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a mother alloy doping apparatus, referring to fig. 1 to 3, where fig. 1 is a schematic structural diagram of the mother alloy doping apparatus, the mother alloy doping apparatus includes: a connecting piece 1 and a container 2 for containing dopant;
the container 2 is made of silicon;
the upper part of the connecting piece 1 is used for connecting with the heavy hammer, and the lower part is used for connecting with the container 2.
It should be noted that, the container 2 for containing the dopant is made of silicon, and when the doping is needed, the dopant is contained in the container 2, and then the container is connected below the heavy hammer through the connecting piece 1, and then the container 2 is hung in the furnace, under the action of the heavy hammer, the container 2 can be immersed in the silicon solution, and the container 2 can be slowly melted under the high temperature until the dopant in the container 2 is dissolved in the silicon solution.
Specifically, the connecting member 1 includes: the device comprises a barrel body 11, a connecting column 12 and a transverse plate 13;
the upper part of the cylinder 11 is provided with an internal thread connected with the heavy hammer, and the lower part is connected with the transverse plate 13 through a connecting column 12;
the upper part of the container 2 is in snap engagement with the cross plate 13.
It should be noted that the upper part of the cylinder 11 is provided with an internal thread connected with the weight, and the lower part is connected with the transverse plate 13 through the connecting column 12; the upper part of container 2 and diaphragm 13 joint make things convenient for the staff to be connected barrel 11 and weight to and make things convenient for container 2 and diaphragm 13 to be connected.
Further, the container 2 is of a square structure, and a feed inlet is formed in the upper end face of the container 2.
It should be noted that the shape of the container 2 may be a square structure, or may be other types of structures, and those skilled in the art can select the shape according to the needs.
It should be noted that, a feed inlet is provided at the upper end surface of the container 2 to facilitate a worker to add the dopant into the container 2, but the feed inlet is not limited to be provided at the upper end surface of the container 2, and may be provided at a side portion of the container 2.
Specifically, as shown in fig. 3, a slot 21 is formed along one side of the container 2 in the horizontal direction to engage with the horizontal plate 13.
It should be noted that, a clamping groove 21 matched with the transverse plate 13 is formed in one side of the container 2 in the horizontal direction, when the connecting piece 1 is connected with the container 2, the transverse plate 13 is only required to be clamped into the clamping groove 21 from the side edge of the container 2, and the connecting device is convenient to operate and firm in connection, and is beneficial to improving the working efficiency of workers.
Specifically, the diameter of the internal thread of the cylinder 11 is 20mm to 40mm.
The diameter of the internal thread of the cylinder 11 may be 20mm, 40mm, or 38mm, and those skilled in the art can select the diameter according to the external thread of the weight.
Further, the cylinder 11, the connecting column 12 and the transverse plate 13 are of an integrated structure.
It should be noted that, the barrel 11, the connecting column 12 and the transverse plate 13 are integrated, so that the installation steps of workers can be effectively reduced, and the work efficiency of the workers can be improved.
Specifically, the connecting piece 1 is made of graphite.
It should be noted that the connecting member 1 may be made of graphite or other materials, and those skilled in the art may select the connecting member according to requirements.
Further, the container 2 is a cylindrical cavity.
It should be noted that the container 2 may be a cylindrical cavity, a circular cavity, or a square cavity, and those skilled in the art may select the cavity according to the requirement.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A device for doping master alloy is characterized by comprising: the device comprises a connecting piece and a container for containing a doping agent;
the container is made of silicon;
the upper part of the connecting piece is used for connecting with the heavy hammer, and the lower part of the connecting piece is used for connecting with the container.
2. The doped master alloy device of claim 1, wherein the connector comprises: the device comprises a barrel, a connecting column and a transverse plate;
the upper part of the barrel is provided with an internal thread connected with the heavy hammer, and the lower part of the barrel is connected with the transverse plate through the connecting column;
the upper part of the container is clamped with the transverse plate.
3. A master alloy replenishing device according to claim 2, wherein the container is of a square structure, and a feed inlet is formed in the upper end face of the container.
4. A master alloy supplementing and mixing device according to claim 3, wherein a clamping groove matched with the transverse plate is formed in one side of the container along the horizontal direction.
5. A doped master alloy apparatus according to claim 2, wherein the internal thread of the barrel has a diameter in the range of 20mm to 40mm.
6. The doped master alloy device of claim 2, wherein the cylinder, the connecting column and the transverse plate are of a one-piece structure.
7. A doped master alloy apparatus according to claim 1, wherein said connecting member is made of graphite.
8. The master alloy doping apparatus of claim 1, wherein the container has a cylindrical cavity therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211054249.1A CN115449895A (en) | 2022-08-31 | 2022-08-31 | Device for doping mother alloy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211054249.1A CN115449895A (en) | 2022-08-31 | 2022-08-31 | Device for doping mother alloy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115449895A true CN115449895A (en) | 2022-12-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211054249.1A Pending CN115449895A (en) | 2022-08-31 | 2022-08-31 | Device for doping mother alloy |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05201790A (en) * | 1991-10-09 | 1993-08-10 | Shin Etsu Handotai Co Ltd | Method for adding doping agent using seed crystal |
| JP2001342094A (en) * | 2000-05-31 | 2001-12-11 | Komatsu Electronic Metals Co Ltd | Device and method for monocrystal pulling surely executed with arsenic doping |
| CN103958745A (en) * | 2011-11-29 | 2014-07-30 | Lg矽得荣株式会社 | Apparatus and method for growing ingots |
| KR20140094803A (en) * | 2013-01-23 | 2014-07-31 | 주식회사 엘지실트론 | Dopant feeder for single crystal manufacturing equipment |
| KR101725690B1 (en) * | 2015-12-17 | 2017-04-10 | 주식회사 엘지실트론 | Crystal grower |
| US20170356099A1 (en) * | 2014-11-26 | 2017-12-14 | Corner Star Limited | Apparatus and method for introducing volatile dopants into a melt |
| JP6829853B1 (en) * | 2020-02-25 | 2021-02-17 | Ｆｔｂ研究所株式会社 | Single crystal growth method and jig used in the method |
-
2022
- 2022-08-31 CN CN202211054249.1A patent/CN115449895A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05201790A (en) * | 1991-10-09 | 1993-08-10 | Shin Etsu Handotai Co Ltd | Method for adding doping agent using seed crystal |
| JP2001342094A (en) * | 2000-05-31 | 2001-12-11 | Komatsu Electronic Metals Co Ltd | Device and method for monocrystal pulling surely executed with arsenic doping |
| CN103958745A (en) * | 2011-11-29 | 2014-07-30 | Lg矽得荣株式会社 | Apparatus and method for growing ingots |
| KR20140094803A (en) * | 2013-01-23 | 2014-07-31 | 주식회사 엘지실트론 | Dopant feeder for single crystal manufacturing equipment |
| US20170356099A1 (en) * | 2014-11-26 | 2017-12-14 | Corner Star Limited | Apparatus and method for introducing volatile dopants into a melt |
| KR101725690B1 (en) * | 2015-12-17 | 2017-04-10 | 주식회사 엘지실트론 | Crystal grower |
| JP6829853B1 (en) * | 2020-02-25 | 2021-02-17 | Ｆｔｂ研究所株式会社 | Single crystal growth method and jig used in the method |
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