CN115449777A - Semiconductor reaction member and method for producing same - Google Patents

Semiconductor reaction member and method for producing same Download PDF

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Publication number
CN115449777A
CN115449777A CN202211187866.9A CN202211187866A CN115449777A CN 115449777 A CN115449777 A CN 115449777A CN 202211187866 A CN202211187866 A CN 202211187866A CN 115449777 A CN115449777 A CN 115449777A
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semiconductor
semiconductor reaction
reaction
surface layer
equipment
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荣海洋
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GTA Semiconductor Co Ltd
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GTA Semiconductor Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)

Abstract

The application provides a semiconductor reaction part and a manufacturing method thereof, which are applied to the manufacturing process of a semiconductor device, wherein the semiconductor reaction part comprises a surface layer which is additionally arranged on the reaction surface of semiconductor reaction equipment and used for conducting heat energy for a wafer reacted in a cavity of the semiconductor reaction equipment, and the surface layer is made of an anodic oxidation material so as to enhance the service performance of the semiconductor reaction equipment. Under the prerequisite that does not influence reaction cavity technological parameter, make heating portion surface corrosion-resistant promotion, prevent the production of little swell, the life of heating portion improves. The stability of the heat transfer temperature is also improved. Not only is the cost and the requirement of equipment maintenance reduced, but also the unnecessary particle number in the equipment cavity is reduced, the utilization rate of the equipment is improved, the quality of wafer processing is improved, and the rejection rate of wafers is reduced, so that the purposes of cost reduction and efficiency improvement are achieved.

Description

Semiconductor reaction member and method for producing same
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a semiconductor reaction component and a manufacturing method thereof.
Background
The chemical vapor deposition process of semiconductor device is carried out by using reaction equipment, such as AMAT CENTURA 5200DXZ equipment. The apparatus is the mainstream apparatus for manufacturing 0.18-0.5 μm integrated circuit, and can be used for deposition of PE-TEOS (SiO 2 is finally generated by PECVD (plasma enhanced chemical vapor deposition) DEP TEOS), BPSG (Boro-phosphor-Silicate Glass, borophosphosilicate Glass), PSG (phosphosilicate Glass), USG (Undoped Silicate Glass ), PE-OXIDE (polyethylene OXIDE), PE-NITRIDE (nitrided polyethylene), SACVD (chemical vapor deposition under atmospheric pressure), and other processes.
However, when the chemical vapor deposition process is performed in the chamber, the AL Heater provides a higher heating temperature for wafer processing, for example, the SACVD process provides a high temperature of 460 degrees, the PE-TEOS process provides a high temperature of 400 degrees, and so on, so that the AL Heater generates a larger warping deformation on its surface in a high-temperature working environment, which further affects the conduction of heat energy to the wafer, and thus the temperature of the wafer obtained from the AL Heater is reduced, which causes the wafer temperature in various processes to fail to meet the requirements. In addition, when the chamber is cleaned in a high temperature state by the heating part, etching gases such as: c 2 F 6 ,NF 3 . Thereby cause the damage and the drop of heating portion surface protection layer, corrosive gas can react with the AL of heating portion bottom layer, forms and fluoridizes AL and oxide, leads to the protruding many little swell in heating portion surface, not only influences heat-conduction and still produces the aluminium fluoride granule to make the interior wafer processing quality of cavity reduce, heating portion operating duration increases, leads to heating portion life-span to reduce, and then has increased technology cost.
Therefore, a new semiconductor reaction scheme is needed.
Disclosure of Invention
In view of the above, embodiments of the present disclosure provide a semiconductor reaction component and a method for manufacturing the same, which are applied to a semiconductor device manufacturing process.
The embodiment of the specification provides the following technical scheme:
the embodiment of the specification provides a semiconductor reaction component which is applied to a semiconductor device manufacturing process and comprises a surface layer which is additionally arranged on the surface of semiconductor reaction equipment and used for conducting heat energy to a wafer reacted in a cavity of the semiconductor reaction equipment and is made of an anodic oxidation material.
Embodiments of the present description also provide a method for manufacturing a semiconductor reaction component, including:
obtaining a use temperature parameter of the inner surface of the cavity of the semiconductor reaction equipment;
and acquiring processing data required by adding a surface layer according to the service temperature parameter, and generating the surface layer of the semiconductor reaction part according to the processing data.
The embodiment of the present specification further provides a semiconductor reaction method, which is used for performing a plurality of processes on a wafer by using a semiconductor reaction equipment cavity corresponding to the semiconductor reaction component according to any technical scheme of the embodiment of the present specification.
Compared with the prior art, the beneficial effects that can be achieved by the at least one technical scheme adopted by the embodiment of the specification at least comprise:
through setting up a corrosion-resistant top layer to semiconductor reaction cavity, under the prerequisite that does not influence reaction cavity technological parameter, make heating portion surface corrosion resistance promote, prevent the production of little swell, not only improved the life of heating portion. The stability of the heat transfer temperature is also improved. The cost and the requirement of maintenance of the reaction equipment are reduced, unnecessary particle numbers in an equipment cavity are reduced, the utilization rate of the equipment is improved, the quality of wafer processing is improved, and the rejection rate of wafers is reduced, so that the aims of cost reduction and efficiency improvement are fulfilled.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a schematic illustration of a prior art wafer reaction heater using varying defects;
FIG. 2 is a schematic view of a semiconductor reaction component provided in an embodiment of the present disclosure;
FIG. 3 is a schematic illustration of an unused surface of a prior art wafer reaction heater;
FIG. 4 is a graph illustrating the results of a prior art wafer reaction thermal conduction temperature test;
FIG. 5 is a graph showing the results of a wafer reaction thermal conduction temperature test according to an embodiment of the present disclosure;
fig. 6 is a flowchart of a method for manufacturing a semiconductor reaction component according to an embodiment of the present disclosure.
Detailed Description
The embodiments of the present application will be described in detail below with reference to the accompanying drawings.
The following description of the embodiments of the present application is provided by way of specific examples, and other advantages and effects of the present application will be readily apparent to those skilled in the art from the disclosure herein. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. The present application is capable of other and different embodiments and its several details are capable of modifications and/or changes in various respects, all without departing from the spirit of the present application. It should be noted that the features in the following embodiments and examples may be combined with each other without conflict. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.
It is noted that various aspects of the embodiments are described below within the scope of the appended claims. It should be apparent that the aspects described herein may be embodied in a wide variety of forms and that any specific structure and/or function described herein is merely illustrative. Based on the present application, one skilled in the art should appreciate that one aspect described herein may be implemented independently of any other aspects and that two or more of these aspects may be combined in various ways. For example, an apparatus may be implemented and/or a method practiced using any number and aspects set forth herein. Additionally, such an apparatus may be implemented and/or such a method may be practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.
It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present application, and the drawings only show the components related to the present application rather than the number, shape and size of the components in actual implementation, and the type, amount and ratio of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
In addition, in the following description, specific details are provided to facilitate a thorough understanding of the examples. However, it will be understood by those skilled in the art that the present invention may be practiced without these specific details.
The mainstream equipment for chemical vapor deposition processing in the manufacturing process of semiconductor devices is AMAT CENTURA 5200DXZ equipment, which can be used for deposition of PE-TEOS, BPSG, PSG, USG, PE-OXIDE, PE-NITRIDE, SACVD and other processes. The chemical vapor deposition process performed in the apparatus chamber uses an AL heating section as shown in fig. 3 to provide a higher heating temperature for wafer processing, such as AL surface 3 shown in fig. 3. However, when the AL heating portion is in a high temperature environment during the use of the apparatus, the surface thereof may be warped and deformed, and the heat energy transferred to the wafer may be affected, which not only reduces the usage rate of the apparatus, but also increases the rejection rate of the wafer. In addition, the cleaning cavity generates etching gas when the heating part is in a high-temperature state, so that the surface protection layer of the heating part is damaged and falls off, corrosive gas reacts with AL on the bottom layer of the heating part to form fluorinated AL and oxide, a plurality of small bulges protruding on the surface of the heating part are caused, heat conduction is influenced, and aluminum fluoride particles are generated, so that the processing quality of a wafer in the cavity is reduced, the working duration of the heating part is increased, the service life of the heating part is reduced, and the process cost is increased.
In view of the above, the inventors found that providing a new corrosion-resistant coating on the surface of the apparatus in the semiconductor device manufacturing process can prevent the reaction apparatus from warping and deforming due to the high-temperature environment, thereby reducing the generation of corrosive gas corresponding to the cleaning of the high-temperature heating portion in the high-temperature state, further reducing the small bulges protruding on the surface of the heating portion, preventing the surface of the heating portion from being damaged and falling off, and reducing the generation of particles such as aluminum fluoride, thereby enhancing the heat conduction performance of the wafer temperature rise in the wafer reaction process, improving the wafer processing quality, reducing the working time of the heating portion, prolonging the service life of the heating portion, and further achieving the purposes of cost reduction and efficiency improvement.
Based on this, the embodiments of the present specification propose a new semiconductor reaction scheme. FIG. 3 shows that no new coating is applied on the external surface of the heating part of the semiconductor reaction device in the prior art, that is, FIG. 3 shows that the external surface of the AMAT CENTURA 5200DXZ cavity AL system heat is in AL system state without a protective layer, that is, AL system surface 3. After the wafer reaction process is used for 6 months, as shown in fig. 1, many small bumps are generated on the HEATER surface (refer to a plurality of small bumps 1 shown in circles in fig. 1), and the HEATER surface is seriously warped. Fig. 2 is a schematic diagram of an outer surface of the heating portion provided with a new coating according to the present specification, and by providing a new coating (i.e., a new surface layer, such as the black coating 2 shown in fig. 2) on the outer surface of the heating portion, the corrosion resistance of the surface of the heating portion is improved on the premise of not affecting the process parameters of the reaction chamber, thereby preventing the generation of small bulges and prolonging the service life of the heating portion. The stability of the heat transfer temperature is also improved. Not only is the cost and the requirement of equipment maintenance reduced, but also the unnecessary particle number in the equipment cavity is reduced, the utilization rate of the equipment is improved, the quality of wafer processing is improved, and the rejection rate of wafers is reduced, so that the purposes of cost reduction and efficiency improvement are achieved.
The technical solutions provided by the embodiments of the present application are described below with reference to the accompanying drawings.
As shown in fig. 2, embodiments of the present disclosure provide a semiconductor reaction component, which is applied to a semiconductor device manufacturing process, and includes adding a surface layer on a reaction surface of a semiconductor reaction device, i.e., penetrating a surface layer into an original AL surface, and then forming a new surface, i.e., forming a new surface by disposing a new surface layer (i.e., a new coating layer, such as an anodized material) on the original reaction surface, thereby enhancing the usability of the semiconductor reaction device.
In some embodiments, the anodized material includes an AL alloy material.
The embodiment of the specification is to arrange a surface layer on the surface of the semiconductor reaction equipment, wherein the surface layer is made of anodic oxidation materials, such as AL 2 O 3 The material, this AL system alloy material has avoided the reaction of high temperature environment corrosive gas and AL system surface, has avoided the production of little swell and has prevented the emergence of reaction surface warpage deformation under the high temperature environment of wafer reaction to promote the corrosion resistance on reaction equipment surface, improve the life of heating portion, still promoted heat-conduction temperature's stability, promoted the quality of wafer processing, reduced the disability rate of wafer.
In some embodiments the anodized material is a hard anodized material.
In the embodiment of the specification, a surface layer (i.e., a new coating) is additionally arranged on the semiconductor reaction surface, and the surface layer is made of a hard anodic oxidation material, so that the thickness and hardness of the reaction surface are enhanced and the corrosion resistance is enhanced compared with the AL surface in the prior art, thereby avoiding the generation of small bulges on the inner surface of the reaction cavity and the buckling deformation of the reaction surface under the high-temperature environment of wafer reaction, reducing the working time of the reaction heating part, prolonging the service life of the reaction heating part and the like.
In one embodiment, the anodized material of the surface layer is in different colors according to different processing data.
Specifically, the processing data for setting the anodized material includes a processing temperature, a processing time, a processing type, a processing potential magnitude, and the like. The surface layer can be differently embodied by changing at least one of the processing data, that is, the surface layer can be in different colors, for example, brown, dark brown, gray yellow, gray to black, according to the heat treatment state of the surface layer. The treatment temperature also affects the hardness of the surface layer, and the lower the treatment temperature, the higher the hardness of the surface layer. In some embodiments, the surface layer may be in different colors depending on the type of AL alloy material, and the like, which are not described herein again.
As shown in fig. 2, the surface layer of the embodiment of the present disclosure is black, and the black surface layer 2 can prevent the generation of small bulges on the reaction surface during the wafer reaction and the warpage deformation of the reaction surface under the high temperature environment of the wafer reaction, reduce the working time of the reaction heating part, and improve the service life of the reaction heating part.
In some embodiments, the semiconductor reaction component has a surface layer with a predetermined thickness. Specifically, the thickness of the surface layer is 50-80um, a new surface is formed by combining the AL surface layer with the surface layer, the hardness is improved, the thickness is increased, the corrosion resistance is improved, compared with the prior art, the corrosion reaction with the AL surface is prevented, the surface buckling deformation and the like of semiconductor reaction equipment such as a heating part under the high-temperature reaction temperature environment of a wafer can be prevented, small bulges are prevented from being generated on the AL surface, the working time of the reaction heating part is shortened, the service life of the reaction heating part is prolonged, and the like.
In some embodiments, the semiconductor reaction component has a surface layer with a useful conduction temperature increase in the range of 20 ℃ to 50 ℃.
Specifically, a new reaction surface is formed by arranging a surface layer on the reaction surface of the semiconductor reaction equipment, so that the hardness, the thickness and the corrosion resistance of the wafer reaction equipment are improved, and therefore, on the premise of not influencing the technological parameters of a reaction cavity, the generation of small bulges is prevented, the service life of a heating part is prolonged, and the stability of heat conduction temperature is improved. Referring to fig. 4 and 5, some embodiments of the prior art measure a conduction temperature of 292.9 ℃ for the wafer reaction surface and 332.6 ℃ for the wafer reaction surface after modification. The method includes the steps that a new reaction surface formed by the additionally arranged surface layer is obtained through multiple experimental measurements, the heat transfer performance of the new reaction surface is improved, and referring to the following table 1, the use conduction temperature of the surface layer is obtained to be improved within the range of 20 ℃ to 50 ℃ according to the reaction temperature of 400 ℃.
TABLE 1
Figure BDA0003868097830000071
To sum up, this specification embodiment not only promotes the corrosion resistance on heating portion surface through addding a top layer, improves the life of heating portion, has promoted the quality of wafer processing moreover, has reduced the disability rate of wafer, has reduced the cost and the requirement of equipment maintenance, has improved the utilization ratio of equipment to the purpose of cost reduction increase has been reached.
In some embodiments, the surface layer may be adaptively added to the chamber of the semiconductor reaction apparatus according to different temperature conditions of the wafer reaction process, so as to adapt corresponding semiconductor reaction components for each process of the wafer.
As shown in fig. 6, embodiments of the present disclosure provide a method for manufacturing a semiconductor reaction component, which includes steps S610 to S620. Step S610, obtaining the use temperature parameter of the inner surface of the semiconductor reaction cavity. Step S620, acquiring processing data required by adding a surface layer according to the using temperature parameter, and generating the surface layer of the semiconductor reaction part according to the processing data.
In particular, the use temperature parameter includes a range of conduction temperature values for the surface in use. The processing data comprises: processing temperature, processing time, processing type, processing potential magnitude, and the like.
For example, the use temperature parameter includes a conduction temperature range 294 deg.C to 338 deg.C when the surface is in use. And then, acquiring processing data required by coating the surface layer of the reaction equipment according to the conduction temperature numerical value range, and further generating the surface layer of the semiconductor reaction component according to the processing data. For example, relatively low processing temperatures are required depending on the hardness of the reaction surface. The difference of the processing time and the processing potential is obtained by combining the difference of the processing types such as chemical electrolyte, and the processing potential is generally more than 30V. The semiconductor reaction metal to be added with the surface layer is placed in electrolyte as an anode, so that the surface layer is added on the existing surface, wherein the electrolyte comprises sulfuric acid solution, oxalic acid, propylene glycol, sulfosalicylic acid, other inorganic salts, organic acid and the like. The power supply can be divided into direct current, alternating current, direct current and alternating current superposition, pulse and superposition pulse power supply and the like. The surface layer obtained through the treatment is different in appearance color, such as brown, dark brown, gray yellow, gray to black, according to different materials and different treatment data of the surface layer. And the hardness of the additional surface layer is higher as the electrolyte temperature is lower. In some embodiments, the addition of a black skin layer 2 as illustrated in fig. 2 is preferred.
Compared with the existing wafer, the reaction surface is additionally provided with a surface layer, so that the use performance of the semiconductor reaction equipment is improved. On the premise of not influencing the technological parameters of the reaction cavity, the corrosion resistance of the surface of the heating part is improved, small bulges are prevented from being generated, unnecessary particle numbers in the equipment cavity are reduced, and the service life is prolonged. The stability of heat conduction temperature is also improved, the quality of wafer processing is improved, and the rejection rate of wafers is reduced, so that the cost and the requirement of equipment maintenance are reduced, the utilization rate of equipment is improved, and the purposes of cost reduction and efficiency improvement are achieved.
The embodiment of the specification provides a semiconductor reaction method, and various process treatments are performed on a wafer by adopting a semiconductor reaction equipment cavity corresponding to a semiconductor reaction component in any technical scheme of the embodiment of the specification. For example, by adopting the wafer reaction equipment additionally provided with the surface layer, the deposition of the processes such as PE-TEOS, BPSG, PSG, USG, PE-OXIDE, PE-NITRIDE, SACVD and the like is realized, the corrosion resistance of the equipment is improved, the service performance of the reaction equipment is improved, small bulges are prevented from being generated, unnecessary particle numbers in the cavity of the equipment are reduced, the heat conduction performance of the reaction equipment is enhanced on the premise of not influencing the technological parameters of the cavity, the temperature rise of the wafer reaction is stable, the processing quality of the wafer is improved, the rejection rate of the wafer is reduced, the utilization rate of the equipment is improved, and the purposes of reducing cost and improving efficiency are achieved.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments can be referred to each other, and each embodiment focuses on the differences from the other embodiments.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (10)

1. A semiconductor reaction component is applied to the manufacturing process of a semiconductor device and is characterized in that the semiconductor reaction component comprises a surface layer which is additionally arranged on the reaction surface of semiconductor reaction equipment and is used for conducting heat energy for a wafer reacted in a cavity of the semiconductor reaction equipment and is made of an anodic oxidation material.
2. The semiconductor reaction component of claim 1, wherein the anodized material of the surface layer comprises: an Al alloy material.
3. The semiconductor reaction component of claim 1 wherein the anodized material is a hard anodized material.
4. The semiconductor reaction component of claim 1, wherein the anodized material of the surface layer exhibits different colors depending on processing data.
5. The semiconductor reaction component of claim 1, wherein the surface layer has a predetermined thickness.
6. The semiconductor reaction component of claim 1, wherein the surface layer has a useful conduction temperature rise in the range of 20 ℃ to 50 ℃.
7. A method of manufacturing a semiconductor reaction component, characterized by manufacturing the semiconductor reaction component according to any one of claims 1 to 6, the method comprising:
obtaining a use temperature parameter of the inner surface of the cavity of the semiconductor reaction equipment;
and acquiring processing data required by adding a surface layer according to the service temperature parameter, and generating the surface layer of the semiconductor reaction part according to the processing data.
8. The method of manufacturing a semiconductor reaction component of claim 7 wherein the service temperature parameter comprises a range of values of a conduction temperature of the surface layer in service.
9. The method of manufacturing a semiconductor reaction component of claim 7, wherein the processing data comprises: processing temperature, processing time, processing type and processing potential magnitude.
10. A semiconductor reaction method, characterized in that a wafer is subjected to a plurality of processes by using the semiconductor reaction equipment cavity corresponding to the semiconductor reaction part as claimed in any one of claims 1 to 6.
CN202211187866.9A 2022-09-28 2022-09-28 Semiconductor reaction member and method for producing same Pending CN115449777A (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW488010B (en) * 2000-02-04 2002-05-21 Kobe Steel Ltd Chamber member made of aluminum alloy and heater block
US20040151926A1 (en) * 2003-01-23 2004-08-05 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) Aluminum alloy member superior in corrosion resistance and plasma resistance
CN101521145A (en) * 2008-02-26 2009-09-02 株式会社神户制钢所 Surface treatment unit for semiconductor manufacturing apparatus and manufacturing method thereof
CN101680060A (en) * 2006-08-11 2010-03-24 株式会社神户制钢所 Aluminum alloy for anodizing having durability, contamination resistance and productivity, method for producing the same, aluminum alloy member having anodic oxide coating, and plasma processing appar
CN103215589A (en) * 2013-04-24 2013-07-24 中国科学院金属研究所 Method for preparing surface protecting coating layer of light weight alloy
CN104357840A (en) * 2014-10-28 2015-02-18 沈阳富创精密设备有限公司 Preparation method for surface pure aluminum or aluminum alloy coating of metal structural material
CN114256047A (en) * 2020-09-25 2022-03-29 中微半导体设备(上海)股份有限公司 Semiconductor component, coating forming method and plasma reaction device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW488010B (en) * 2000-02-04 2002-05-21 Kobe Steel Ltd Chamber member made of aluminum alloy and heater block
US20040151926A1 (en) * 2003-01-23 2004-08-05 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) Aluminum alloy member superior in corrosion resistance and plasma resistance
CN101680060A (en) * 2006-08-11 2010-03-24 株式会社神户制钢所 Aluminum alloy for anodizing having durability, contamination resistance and productivity, method for producing the same, aluminum alloy member having anodic oxide coating, and plasma processing appar
CN101521145A (en) * 2008-02-26 2009-09-02 株式会社神户制钢所 Surface treatment unit for semiconductor manufacturing apparatus and manufacturing method thereof
CN103215589A (en) * 2013-04-24 2013-07-24 中国科学院金属研究所 Method for preparing surface protecting coating layer of light weight alloy
CN104357840A (en) * 2014-10-28 2015-02-18 沈阳富创精密设备有限公司 Preparation method for surface pure aluminum or aluminum alloy coating of metal structural material
CN114256047A (en) * 2020-09-25 2022-03-29 中微半导体设备(上海)股份有限公司 Semiconductor component, coating forming method and plasma reaction device

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