CN115446726A - Polishing method for improving flatness of silicon wafer - Google Patents
Polishing method for improving flatness of silicon wafer Download PDFInfo
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- CN115446726A CN115446726A CN202210925895.4A CN202210925895A CN115446726A CN 115446726 A CN115446726 A CN 115446726A CN 202210925895 A CN202210925895 A CN 202210925895A CN 115446726 A CN115446726 A CN 115446726A
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- 238000005498 polishing Methods 0.000 title claims abstract description 120
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 109
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 109
- 239000010703 silicon Substances 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000007788 liquid Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 3
- 230000009471 action Effects 0.000 abstract description 8
- 238000003756 stirring Methods 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 82
- 239000010410 layer Substances 0.000 description 43
- 239000000243 solution Substances 0.000 description 22
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000011550 stock solution Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000004018 waxing Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a polishing method for improving the flatness of a silicon wafer, which comprises the following steps: controlling the non-polished surface of the silicon wafer to be adhered to the bearing plate by the wax layer; and controlling the bearing disc to polish the polished surface of the silicon wafer on the polishing disc with a certain temperature under a set pressure. The polishing method for improving the flatness of the silicon wafer can improve the surface flatness of the silicon wafer, balance mechanical action and chemical action, reduce TTV, TIR, STIR and TAPER parameters of the surface of the silicon wafer after multiple polishing and improve the polishing quality of the silicon wafer.
Description
Technical Field
The invention belongs to the technical field of silicon wafer polishing, and particularly relates to a polishing method for improving the flatness of a silicon wafer.
Background
In the process of polishing and processing silicon wafers, the flatness is a very important parameter and is a parameter which is difficult to optimize in the polishing process. Polishing the silicon wafer is to polish the surface of the silicon wafer after acid corrosion or alkali corrosion by the joint grinding of the corrosion of chemical action and mechanical action to obtain a smooth and flat surface. With the reduction of the characteristic size of a semiconductor and the improvement of the integration level, the requirement on the flatness of the surface of a silicon wafer is higher and higher, and the original polishing process cannot meet the requirement on higher flatness of the silicon wafer.
Disclosure of Invention
The invention provides a polishing method for improving the flatness of a silicon wafer, which solves the technical problem that the existing silicon wafer polishing process cannot meet the requirement of higher flatness of the silicon wafer.
In order to solve at least one technical problem, the technical scheme adopted by the invention is as follows:
a polishing method for improving the flatness of a silicon wafer comprises the following steps:
coating a wax layer on the non-polished surface of the silicon wafer;
heating the wax layer on the non-polished surface of the silicon wafer;
adhering the wax layer on the silicon wafer to a bearing plate;
and controlling the bearing disc to polish the polished surface of the silicon wafer on the polishing disc with a certain temperature under a set pressure.
Further, the step of coating a wax layer on the non-polished surface of the silicon wafer comprises:
dropping a certain amount of wax liquid on the non-polished surface of the silicon wafer;
and controlling the silicon wafer to rotate at a high speed so that the wax liquid on the non-polished surface of the silicon wafer is thrown away and uniformly covers the surface of the silicon wafer to form a wax layer.
Further, the wax layer on the non-polished surface of the heated silicon wafer is a uniformly thrown wax layer.
Further, the step of adhering the wax layer on the silicon wafer to the bearing plate comprises heating the wax layer on the surface of the silicon wafer and heating the whole bearing plate to enable the surface temperature of the bearing plate to be matched with the adhering temperature of the wax layer.
Further, the method also comprises the step of cooling the bearing plate adhered with the silicon chip.
Furthermore, the bearing disc rotates under the driving of a middle shaft guide wheel arranged in the center of the polishing disc, wherein the rotating speed of the middle shaft guide wheel is greater than that of the polishing disc.
Further, the rotating speed of the middle shaft guide wheel is not more than 80 revolutions per minute; and the rotating speed of the polishing disk is not less than 10 revolutions per minute.
Furthermore, the pressure of the bearing plate is 0-200KPa, and the bearing plate is a ceramic plate.
Further, the temperature of the polishing pad on the polishing pad is less than 40 ℃.
Furthermore, the flow rate of the polishing solution is 3-8L/min, and the temperature of the polishing solution is 15-28 ℃.
The polishing method for improving the flatness of the silicon wafer can improve the surface flatness of the silicon wafer, balance mechanical action and chemical action, reduce TTV, TIR, STIR and TAPER parameters of the surface of the silicon wafer after multiple polishing and improve the polishing quality of the silicon wafer.
Drawings
FIG. 1 is a flow chart of a polishing method for improving the flatness of a silicon wafer according to an embodiment of the present invention;
fig. 2 is a schematic structural view of a polishing apparatus according to an embodiment of the present invention.
10. Silicon chip 20, bearing disc 30 and polishing disc
40. Polishing pad 50, axis guide wheel
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
The embodiment provides a polishing method for improving the flatness of a silicon wafer, a flow chart is shown in fig. 1, and the method comprises the following steps:
the non-polished side of the wafer 10 is coated with a wax layer, as shown by the black layer between the wafer 10 and the carrier plate 20 in fig. 2. Specifically, a certain amount of wax liquid is dropped on the non-polished surface of the silicon wafer 10. When the wax liquid is coated, the surface of the silicon wafer 10 obtains partial wax liquid in a dropping manner similar to a dispensing manner.
And controlling the silicon wafer 10 to rotate at a high speed so that the wax ring on the non-polished surface of the silicon wafer is thrown away and uniformly covers the surface of the silicon wafer 10 to form a wax layer. Specifically, the wax liquid in the wax ring on the non-polished surface of the silicon wafer 10 is rotated and diffused outward to be evenly thrown, that is, the wax on the non-polished surface of the silicon wafer 10 is evenly thrown away on the turntable rotating at a high speed, so as to enlarge the bonding area between the silicon wafer and the carrier plate 20 and ensure the bonding strength between the silicon wafer 10 and the carrier plate 20.
Then, the wafer 10 is heated again to form a wax layer on the non-polished surface, wherein the wax layer is a uniformly spread wax layer. The purpose of heating the evenly-spun wax layer is to ensure that the silicon wafer 10 can be completely adhered to the bearing plate 20, and the wax layer has certain viscosity at a certain temperature, so that the wax layer on the non-polished surface of the silicon wafer 10 needs to be heated in a baking oven, and the wax layer is a high-temperature adhesive layer.
The wax layer on the wafer 10 is then adhered to a carrier plate. Specifically, while heating the wax layer on the surface of the silicon wafer 10, the entire carrier plate 20 is also heated, and the surface temperature of the carrier plate is adapted to the bonding temperature of the wax layer, so as to facilitate bonding. I.e., the heated wax layer is then directly bonded to the carrier plate 20 at a certain temperature, because if the carrier plate 20 is still in a cooled state, the temperature of the wax layer is transferred to the carrier plate 20 at a low temperature, thereby weakening the viscosity of the wax layer. Accordingly, the carrier plate 20 must be heated while the wax layer on the non-polished surface of the silicon wafer 10 is heated, so that the carrier plate 20 is kept at a temperature suitable for the wax layer, for better adhesion.
Further, after the bonding, the method further comprises a step of cooling the carrier plate 20 adhered with the silicon wafer 10, that is, after the wax layer on the non-polished surface of the silicon wafer 10 is solidified, the wax layer is cooled, so as to prevent the adhesive viscosity of the silicon wafer 10 and the carrier plate 20 from being affected by the excessive temperature of the wax layer.
And controlling the carrier plate 20 to polish the polished surface of the silicon wafer 10 on the polishing plate 30 with a certain temperature under a set pressure.
Specifically, as shown in fig. 2, the upper end surface of the silicon wafer 10 is adhered to the carrier plate 20 by a wax layer, and the pressure of the carrier plate 20 is controlled to increase the friction force when the silicon wafer 10 is forced into contact with the polishing pad 40 on the polishing pad 30. The polishing disc 30 rotates reversely, the middle shaft guide wheel 50 arranged at the center of the polishing disc 30 rotates clockwise, the middle shaft guide wheel 50 is meshed with the gear at the outer edge of the bearing disc 20, and further the middle shaft guide wheel 50 rotates clockwise to drive the bearing disc 20 and the polishing disc 30 to rotate in the same direction and in the reverse direction.
Further, the carrier plate 20 is driven by a middle shaft guide wheel 50 disposed at the center of the polishing plate 30 to rotate, wherein the outer diameter of the middle shaft guide wheel 50 is smaller than the outer diameter of the carrier plate 20, and the rotating speed of the middle shaft guide wheel 50 is greater than the rotating speed of the polishing plate 30.
Further, the rotating speed of the middle axle guide wheel 50 is not more than 80 revolutions/min, such as 30 revolutions/min, 34 revolutions/min, 40 revolutions/min, 45 revolutions/min, 50 revolutions/min, 55 revolutions/min, 60 revolutions/min, 65 revolutions/min, 70 revolutions/min, 75 revolutions/min, 80 revolutions/min and the like; and the rotation speed of the polishing disc 30 is not less than 10 r/min, such as 10 r/min, 15 r/min, 20 r/min, 25 r/min, 30 r/min, 35 r/min, 40 r/min, 45 r/min, 50 r/min, 55 r/min, 60 r/min, 65 r/min, 70 r/min, 75 r/min, 80 r/min, etc.
Further, the pressure of the carrier plate 20 is 0-200KPa, and the parameters can be selected as follows: 0. 50KPa, 80KPa, 100KPa, 120KPa, 150KPa, 180KPa, 200KPa, etc.; and the carrier plate 20 is a ceramic plate because the ceramic plate has very good heat-conducting properties and it is more easily adhered with a wax layer.
Further, the temperature of the polishing pad 40 on the polishing pad 30 is less than 40 ℃, such as 20 ℃, 25 ℃, 30 ℃, 35 ℃, 40 ℃ and the like.
Further, the polishing solution for polishing the silicon wafer 10 is dispersed onto the polishing pad 40 from above the polishing pad 30 along the center of the polishing pad 30, wherein the flow rate of the polishing solution is 3-8L/min, such as 3L/min, 3.5L/min, 4L/min, 4.5L/min, 5L/min, 5.5L/min, 6L/min, 6.5L/min, 7L/min, 7.5L/min, 8L/min, and the like. And the temperature of the polishing solution is 15-28 deg.C, such as 15 deg.C, 16 deg.C, 17 deg.C, 18 deg.C, 19 deg.C, 20 deg.C, 21 deg.C, 22 deg.C, 23 deg.C, 24 deg.C, 25 deg.C, 26 deg.C, 27 deg.C, 28 deg.C, etc.
In order to make the method of the present invention more comprehensible to those skilled in the art, the technical solutions of the present invention will be explained in detail with reference to specific embodiments, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments.
Example 1:
polishing 300 pieces of 6-inch lightly-doped acid corrosion slices on a domestic CMP polishing machine with wax, wherein the type of the polishing wax is brown wax; the specifications of the rough polishing solution, the middle polishing solution and the fine polishing solution are different from each other, the specification of the rough polishing solution is domestic cooperative development, and the specifications of the middle polishing solution and the fine polishing solution are both prepared from imported stock solutions; the types of the rough polishing pad, the middle polishing pad and the fine polishing pad are different from each other, are common in the field, and are not limited herein. The cleaning liquid is ammonia water and hydrogen peroxide, and the polishing liquid is a mixed liquid of polishing stock solution and water in a certain proportion.
Testing the flatness value of the surface of the silicon wafer 10 before polishing; and then coating a wax layer on the surface of the non-polished surface of the silicon wafer 10 on a waxing machine, and then throwing the wax layer uniformly in a high-speed rotating state. And then the silicon wafer with the evenly spread wax layer is placed in a baking oven to be heated at high temperature, so that the wax layer has viscosity. And then the surface coated with the wax layer is pasted on a high-temperature ceramic bearing plate 20, and after the silicon wafer 10 is pasted, the ceramic bearing plate 20 is cooled.
And controlling the pressure of the bearing disc 20 to be 50KPa, and enabling the polishing disc 30 to drive the polishing pad 40 to rotate at a rotation speed of 10 revolutions per minute, and simultaneously enabling the middle shaft guide wheel 50 to drive the bearing disc 20 to rotate at a rotation speed of 34 revolutions per minute, so that the bearing disc 20 drives the silicon wafer 10 to rotate, wherein the flow rate of the polishing solution is 4L/min, the temperature of the polishing solution is 20 ℃, and the temperature of the polishing pad is 30 ℃. In each polishing, rough polishing, intermediate polishing and finish polishing are sequentially performed on the silicon wafer 10, and finally, a polished surface of the bright and flat silicon wafer 10 is obtained.
And after polishing, detecting the flatness of the surface of the polished surface of the silicon wafer 10 by using a geometric parameter tester.
The geometry of the finally obtained silicon wafer 10 is compared with the standard required dimensions, as shown in table 1.
Table 1 shows the geometry of the silicon wafer 10 compared with the standard required dimensions
As can be seen from Table 1, after polishing, the total thickness variation TTV of the wafer 10 was less than 2.5 μm, the flatness TIR was less than 1.5 μm, and the local flatness STIR was less than 0.6 μm, while the balance TAPER of the wafer 10 was measured to be greater than-1 μm and less than 1 μm, fully compounding the standard requirements.
Example 2:
polishing 300 pieces of 6-inch heavily-doped acid corrosion slices on a domestic CMP polishing machine with wax, wherein the type of the polishing wax is brown wax; the specifications of the rough polishing solution, the middle polishing solution and the fine polishing solution are different from each other, the specification of the rough polishing solution is domestic cooperative development, and the specifications of the middle polishing solution and the fine polishing solution are both prepared from imported stock solutions; the types of the rough polishing pad, the middle polishing pad and the fine polishing pad are different from each other, which are common types in the field, and are not limited herein. The cleaning liquid is ammonia water and hydrogen peroxide, and the polishing liquid is a mixed liquid of polishing stock solution and water in a certain proportion.
Testing the flatness value of the surface of the silicon wafer 10 before polishing; and then coating a wax layer on the surface of the non-polished surface of the silicon wafer 10 on a waxing machine, and then throwing the wax layer uniformly in a high-speed rotating state. And then placing the silicon wafer with the uniformly thrown wax layer into a baking oven for high-temperature heating so as to enable the wax layer to have viscosity. And then the surface coated with the wax layer is pasted on a high-temperature ceramic bearing plate 20, and after the silicon wafer 10 is pasted, the ceramic bearing plate 20 is cooled.
And controlling the pressure of the bearing disc 20 to be 50KPa, and enabling the polishing disc 30 to drive the polishing pad 40 to rotate at a rotation speed of 30 revolutions per minute, and simultaneously enabling the middle shaft guide wheel 50 to drive the bearing disc 20 to rotate at a rotation speed of 80 revolutions per minute, so that the bearing disc 20 drives the silicon wafer 10 to rotate, wherein the flow rate of the polishing solution is 4L/min, the temperature of the polishing solution is 20 ℃, and the temperature of the polishing pad is 30 ℃. In each polishing, rough polishing, intermediate polishing and finish polishing are sequentially performed on the silicon wafer 10, and finally, a polished surface of the bright and flat silicon wafer 10 is obtained.
And after polishing, detecting the flatness of the surface of the polished surface of the silicon wafer 10 by using a geometric parameter tester.
The geometry of the finally obtained silicon wafer 10 is compared with the standard required dimensions, as shown in table 2.
Table 2 shows the geometric dimensions of the silicon wafer 10 obtained in comparison with the standard required dimensions
As can be seen from Table 2, after polishing, the total thickness variation TTV of the silicon wafer 10 was less than 3 μm, the flatness TIR was less than 2 μm, and the local flatness STIR was less than 1.1 μm, while the balance TAPER of the silicon wafer 10 was measured to be greater than-1.5 μm and less than 1.5 μm, fully compounding the standard requirements.
The polishing method for improving the flatness of the silicon wafer can improve the surface flatness of the silicon wafer, balance mechanical action and chemical action, reduce TTV, TIR, STIR and TAPER parameters of the surface of the silicon wafer after multiple polishing and improve the polishing quality of the silicon wafer.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (10)
1. A polishing method for improving the flatness of a silicon wafer is characterized by comprising the following steps:
coating a wax layer on the non-polished surface of the silicon wafer;
heating the wax layer on the non-polished surface of the silicon wafer;
adhering a wax layer on the silicon wafer to a bearing plate;
and controlling the bearing disc to polish the polished surface of the silicon wafer on the polishing disc with a certain temperature under a set pressure.
2. The polishing method for improving the flatness of a silicon wafer according to claim 1, wherein the step of coating a wax layer on the non-polished surface of the silicon wafer comprises:
dropping a certain amount of wax liquid on the non-polished surface of the silicon wafer;
and controlling the silicon wafer to rotate at a high speed so that the wax liquid on the non-polished surface of the silicon wafer is thrown away and uniformly covers the surface of the silicon wafer to form a wax layer.
3. The polishing method for improving the flatness of a silicon wafer according to claim 2, wherein the wax layer on the non-polished surface of the heated silicon wafer is a spread wax layer.
4. A polishing method according to any one of claims 1 to 3 for improving the flatness of the silicon wafer, wherein the step of adhering the wax layer on the silicon wafer to the carrier plate comprises heating the whole carrier plate while heating the wax layer on the surface of the silicon wafer to match the temperature at which the wax layer adheres.
5. The polishing method for improving the flatness of the silicon wafer according to claim 4, further comprising the step of cooling the carrier plate adhered with the silicon wafer.
6. A polishing method for improving the flatness of a silicon wafer according to any one of claims 1 to 3 and 5, wherein the carrier plate is rotated by a center shaft guide wheel disposed at the center of the polishing plate, and the rotation speed of the center shaft guide wheel is greater than that of the polishing plate.
7. The polishing method for improving the flatness of a silicon wafer as claimed in claim 6, wherein the rotation speed of the center shaft guide wheel is not more than 80 rpm; and the rotating speed of the polishing disk is not less than 10 revolutions per minute.
8. The polishing method for improving the flatness of a silicon wafer according to any one of claims 1 to 3, 5 and 7, wherein the pressure of the carrier plate is 0 to 200KPa, and the carrier plate is a ceramic plate.
9. The polishing method for improving the flatness of a silicon wafer as claimed in claim 8, wherein the temperature of the polishing pad on the polishing pad is less than 40 ℃.
10. A polishing method for improving the flatness of a silicon wafer according to any one of claims 1 to 3, 5, 7 and 9, characterized in that the flow rate of the polishing liquid is 3 to 8L/min, and the temperature of the polishing liquid is 15 to 28 ℃.
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| CN202210925895.4A CN115446726A (en) | 2022-08-03 | 2022-08-03 | Polishing method for improving flatness of silicon wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115990825A (en) * | 2022-12-27 | 2023-04-21 | 西安奕斯伟材料科技股份有限公司 | Carrier for double-sided polishing of silicon wafer, double-sided polishing device and silicon wafer |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101934492A (en) * | 2010-08-10 | 2011-01-05 | 天津中环领先材料技术有限公司 | Polishing process of high-smoothness float-zone silicon polished wafer |
| CN102490439A (en) * | 2011-12-15 | 2012-06-13 | 天津中环领先材料技术有限公司 | Waxy surface mount device process adopting zone-melt single crystal silicon double-side polished chip for IGBT (insulated gate bipolar transistor) |
| CN103009234A (en) * | 2012-12-12 | 2013-04-03 | 天津中环领先材料技术有限公司 | Polishing process of heavily arsenic-doped monocrystalline silicon polished wafer with improvement of surface granularity |
| US20130316521A1 (en) * | 2011-03-07 | 2013-11-28 | Shin-Etsu Handotai Co., Ltd. | Method for producing silicon wafer |
| US20140030957A1 (en) * | 2011-05-27 | 2014-01-30 | Shin-Etsu Handotai Co., Ltd. | Method for adjusting height position of polishing head and method for polishing workpiece |
| CN204819118U (en) * | 2015-08-14 | 2015-12-02 | 麦斯克电子材料有限公司 | Silicon chip grinding and polishing equipment |
| CN105252406A (en) * | 2015-09-10 | 2016-01-20 | 上海超硅半导体有限公司 | Polishing method for silicon wafer |
| CN207480365U (en) * | 2017-08-07 | 2018-06-12 | 富士纺控股株式会社 | Grinding device |
| CN108747597A (en) * | 2018-04-25 | 2018-11-06 | 苏州智能制造研究院有限公司 | A kind of alumina ceramic substrate method of surface finish |
| CN110281082A (en) * | 2019-05-28 | 2019-09-27 | 天津中环领先材料技术有限公司 | A kind of polishing process of 8 inch silicon wafer of high-flatness |
| CN114310653A (en) * | 2021-11-29 | 2022-04-12 | 山东有研半导体材料有限公司 | Wax-containing surface mounting process for high-quality geometric parameter polishing sheet |
| CN114378645A (en) * | 2020-10-16 | 2022-04-22 | 万华化学集团电子材料有限公司 | Preparation process of high-flatness polished wafer |
| CN114700871A (en) * | 2022-03-11 | 2022-07-05 | 上海致领半导体科技发展有限公司 | Third-generation semiconductor chemical mechanical polishing device |
-
2022
- 2022-08-03 CN CN202210925895.4A patent/CN115446726A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101934492A (en) * | 2010-08-10 | 2011-01-05 | 天津中环领先材料技术有限公司 | Polishing process of high-smoothness float-zone silicon polished wafer |
| US20130316521A1 (en) * | 2011-03-07 | 2013-11-28 | Shin-Etsu Handotai Co., Ltd. | Method for producing silicon wafer |
| US20140030957A1 (en) * | 2011-05-27 | 2014-01-30 | Shin-Etsu Handotai Co., Ltd. | Method for adjusting height position of polishing head and method for polishing workpiece |
| CN102490439A (en) * | 2011-12-15 | 2012-06-13 | 天津中环领先材料技术有限公司 | Waxy surface mount device process adopting zone-melt single crystal silicon double-side polished chip for IGBT (insulated gate bipolar transistor) |
| CN103009234A (en) * | 2012-12-12 | 2013-04-03 | 天津中环领先材料技术有限公司 | Polishing process of heavily arsenic-doped monocrystalline silicon polished wafer with improvement of surface granularity |
| CN204819118U (en) * | 2015-08-14 | 2015-12-02 | 麦斯克电子材料有限公司 | Silicon chip grinding and polishing equipment |
| CN105252406A (en) * | 2015-09-10 | 2016-01-20 | 上海超硅半导体有限公司 | Polishing method for silicon wafer |
| CN207480365U (en) * | 2017-08-07 | 2018-06-12 | 富士纺控股株式会社 | Grinding device |
| CN108747597A (en) * | 2018-04-25 | 2018-11-06 | 苏州智能制造研究院有限公司 | A kind of alumina ceramic substrate method of surface finish |
| CN110281082A (en) * | 2019-05-28 | 2019-09-27 | 天津中环领先材料技术有限公司 | A kind of polishing process of 8 inch silicon wafer of high-flatness |
| CN114378645A (en) * | 2020-10-16 | 2022-04-22 | 万华化学集团电子材料有限公司 | Preparation process of high-flatness polished wafer |
| CN114310653A (en) * | 2021-11-29 | 2022-04-12 | 山东有研半导体材料有限公司 | Wax-containing surface mounting process for high-quality geometric parameter polishing sheet |
| CN114700871A (en) * | 2022-03-11 | 2022-07-05 | 上海致领半导体科技发展有限公司 | Third-generation semiconductor chemical mechanical polishing device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115990825A (en) * | 2022-12-27 | 2023-04-21 | 西安奕斯伟材料科技股份有限公司 | Carrier for double-sided polishing of silicon wafer, double-sided polishing device and silicon wafer |
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