CN115437210B - Optical proximity correction method and device for dense pattern and electronic equipment - Google Patents
Optical proximity correction method and device for dense pattern and electronic equipment Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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Abstract
The invention discloses an optical proximity correction method and device for dense patterns and electronic equipment. According to the method, through presetting the center distance rule of the patterns of the mask plate, in the process of carrying out optical proximity correction on the dense patterns, the constraints of the pattern center distances in the horizontal direction, the vertical direction or the horizontal and vertical directions are added; after each movement of the edge segments, performing center-to-center distance rule check on the current mask plate pattern to find all edge segments violating the rules; for a certain edge segment which violates the rule, if the last movement operation of the edge segment can reduce the center distance of the related pattern, the edge segment is withdrawn, thereby ensuring that the pattern center distance of the finally obtained mask pattern is not smaller than the preset minimum value, effectively avoiding hot spots and defects caused by the undersize pattern center distance of the mask pattern, and improving the yield of wafer production.
Description
Technical Field
The invention relates to the technical field of semiconductor design and manufacture, in particular to an optical proximity correction method and device for dense patterns and electronic equipment.
Background
Optical Proximity Correction (OPC) is a key ring for generating mask data in the advanced node chip manufacturing process. The OPC technology maximally reduces optical proximity effects due to nonlinear effects such as optics by performing pre-photolithography on a mask. With the continuous shrinkage of the process node, the target pattern of the optical proximity correction becomes denser and the pattern pitch (pitch) becomes smaller. The existing optical proximity correction flow generally segments the edge of the target pattern according to a certain rule, and then moves each edge segment. When the optical proximity correction is performed on the dense pattern, the pattern formed after the edge segment is moved has no other constraint except for the verification of the mask rule, and the condition that the center-to-center distance of the final mask pattern is much smaller than the target pattern center-to-center distance is often caused.
Please refer to fig. 1, which is a schematic diagram illustrating a center-to-center distance between a target pattern and a mask pattern for a conventional optical proximity correction, wherein (a) corresponds to the target pattern and (b) corresponds to the mask pattern. As shown in part (a) of fig. 1, the minimum pattern center-to-center pitch P in the vertical direction of the target pattern for optical proximity correction is: p =1/2 + L1+ S +1/2 + L2. As shown in part (b) of fig. 1, the minimum pattern center-to-center distance P' in the vertical direction of the mask pattern after the optical proximity correction is: p '=1/2 × l1' + S '+1/2 × l2'. In this embodiment, P' is much smaller than P.
The significant reduction in mask pattern center-to-center spacing can cause two problems: 1) The shape of the light source in the photolithography process is usually optimized based on the minimum pattern center pitch P of the optical proximity correction target pattern, and for the pattern with the center pitch P '(P' is significantly smaller than P) of the mask pattern, the process window, especially the Normalized light intensity Log Slope (NILS) is significantly deteriorated. 2) The optical proximity correction model is generally used for sampling, measuring and correcting based on the minimum line width, the minimum distance and the minimum pattern center distance of an optical proximity correction target pattern, and when the actual center distance of the mask pattern is obviously smaller than the center distance of the target pattern, the mask pattern far exceeds the sampling range corrected by the optical proximity correction model, so that the optical proximity correction model cannot accurately predict the mask pattern. Both of these problems can lead to hot spots and defects, which ultimately affect the yield of wafer production.
Disclosure of Invention
The invention aims to provide an optical proximity correction method and device for dense patterns and electronic equipment, which are used for solving the technical problems of hot spots and defects caused by the obvious reduction of the center distance of the patterns of a mask plate obtained by the conventional optical proximity correction method.
In order to achieve the above object, the present invention provides a method for correcting optical proximity of dense patterns, comprising the steps of: establishing a center distance rule of the patterns of the mask plate, wherein the center distance rule is that the pattern center distance of the patterns of the mask plate after optical proximity correction is larger than or equal to a first preset threshold value; segmenting the edge of the target pattern subjected to optical proximity correction based on a preset rule; moving the divided edge sections, and performing mask rule verification on all the moved edge sections to obtain a first mask plate pattern after optical proximity correction; performing center distance rule verification on all edge segments of the obtained first mask plate pattern, and finding out all edge segments violating the center distance rule; performing movement correction on each found edge section, and performing mask rule verification and center distance rule verification again to obtain a second mask plate pattern; and simulating the obtained second mask plate pattern by using the optical proximity correction model and checking the edge position error to obtain the final mask plate pattern after the optical proximity correction.
To achieve the above object, the present invention also provides an optical proximity correction apparatus for dense patterns, comprising: the device comprises an establishing module, a calculating module and a processing module, wherein the establishing module is used for establishing a center-to-center spacing rule of the patterns of the mask plate, and the center-to-center spacing rule is that the pattern center-to-center spacing of the patterns of the mask plate after optical proximity correction is larger than or equal to a first preset threshold value; the segmentation module is used for segmenting the edge of the target pattern subjected to optical proximity correction based on a preset rule; the first verification module is used for moving the divided edge sections and performing mask rule verification on all the moved edge sections to obtain a first mask plate pattern after optical proximity correction; the second verification module is used for verifying the center distance rule of all the edge sections of the acquired first mask plate pattern and finding out all the edge sections violating the center distance rule; the correction module is used for performing mobile correction on each found edge section and performing mask rule verification and center-to-center distance rule verification again to obtain a second mask plate pattern; and the simulation module is used for simulating the acquired second mask pattern and checking the edge position error by using the optical proximity correction model so as to acquire the final mask pattern after the optical proximity correction.
In order to achieve the above object, the present invention further provides an electronic device, which includes a memory, a processor and a computer executable program stored in the memory and running on the processor, wherein the processor executes the computer executable program to implement the steps of the method for optical proximity correction of dense patterns according to the present invention.
According to the method, through presetting the center spacing rule of the patterns of the mask plate, the constraints of the center spacing of the patterns in the horizontal direction, the vertical direction or the horizontal and vertical directions are added in the process of carrying out optical proximity correction on the dense patterns; after each movement of the edge segments, center-to-center distance rule checking is carried out on the current mask plate pattern, and all the edge segments violating the rules are found; for a certain edge segment violating the rules, if the last movement operation of the edge segment can reduce the center distance of the related pattern, withdrawing the movement of the edge segment, ensuring that the finally obtained pattern center distance of the mask pattern is not smaller than a preset threshold value, effectively avoiding hot spots and defects caused by the undersize pattern center distance of the mask pattern, and improving the yield of wafer production.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly introduced below. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
FIG. 1 is a schematic diagram illustrating a distance between a target pattern and a mask pattern in a conventional OPC;
FIG. 2 is a block diagram illustrating a method for OPC of a dense pattern according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating a center-to-center rule check for edge segments according to an embodiment of the present invention;
FIG. 4 is a flowchart illustrating a method for OPC of a dense pattern according to an embodiment of the present invention;
fig. 5 is a block diagram illustrating an optical proximity correction apparatus for dense patterns according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The specific flow of optical proximity correction generally comprises: firstly, segmenting the edge of a target pattern subjected to optical proximity correction according to a certain rule, and then moving each edge segment; mask Rule Check (MRC for short) must be satisfied between the moved pattern edge segments; then, based on the moved pattern, using an optical proximity model to simulate, and calculating an Edge Position Error (EPE) between the simulated outline and the optical proximity target pattern; if the edge position error is less than or equal to a preset threshold, the obtained pattern is the final mask pattern; and if the edge position error is larger than a preset threshold value, calculating the movement amount still needed by each edge segment, and returning to continue moving the edge segments until convergence.
In the conventional OPC process, as long as the mask rule verification is not violated, there is no other constraint on the pattern formed after the edge segment moves. However, as the process nodes are continuously reduced, the target patterns for optical proximity correction are more and more dense, and the pattern pitch is also less and less, which often causes the situation that the center pitch of the final mask pattern is much smaller than the center pitch of the target pattern, resulting in the occurrence of hot spots and defects, and finally affects the yield of wafer production. According to the invention, by presetting the center distance rule of the pattern of the mask plate, after each movement of the edge section, the center distance rule of the current pattern of the mask plate is checked, and all the edge sections violating the rule are found; for a certain edge segment which violates the rule, if the last movement operation of the edge segment can reduce the center distance of the related pattern, the edge segment is withdrawn, thereby ensuring that the pattern center distance of the finally obtained mask pattern is not smaller than the preset minimum value, effectively avoiding hot spots and defects caused by the undersize pattern center distance of the mask pattern, and improving the yield of wafer production. A detailed explanation will be given below.
An embodiment of the invention provides a method for correcting optical proximity of dense patterns.
Fig. 2 to fig. 3 are also referenced, in which fig. 2 is a schematic diagram illustrating a step of a method for correcting optical proximity of dense patterns according to an embodiment of the present invention, and fig. 3 is a schematic diagram illustrating a center-to-center distance rule check performed on an edge segment according to an embodiment of the present invention.
As shown in fig. 2, the method of this embodiment includes the following steps: s1, establishing a center distance rule of a mask pattern; s2, segmenting the edge of the target pattern subjected to optical proximity correction based on a preset rule; s3, moving the divided edge sections, and performing mask rule verification on all the moved edge sections to obtain a first mask plate pattern after optical proximity correction; s4, performing center distance rule verification on all edge sections of the obtained first mask plate pattern, and finding out all edge sections violating the center distance rule; s5, performing movement correction on each found edge section, and performing mask rule verification and center-to-center distance rule verification again to obtain a second mask plate pattern; and S6, simulating the obtained second mask pattern by using the optical proximity correction model and checking the edge position error to obtain the final mask pattern after the optical proximity correction.
And step S1, establishing a center-to-center spacing rule of the mask plate pattern. Specifically, the established center-to-center distance rule is that the pattern center-to-center distance of the mask pattern after the optical proximity correction is greater than or equal to a first preset threshold.
In some embodiments, the first predetermined threshold is less than a minimum on-center distance of the target pattern for optical proximity correction and greater than a pattern on-center distance threshold of a reticle pattern that may cause hot spots or defects. That is, the first preset threshold satisfies the following condition: 1) Less than a corresponding minimum center-to-center spacing of the target pattern for optical proximity correction; 2) When the center-to-center distance of the mask patterns is equal to the first preset threshold value, hot spots or defects cannot be caused. For example, assuming that the minimum center-to-center distance of the OPC target pattern in the vertical direction is P nm, the critical value of the pattern center-to-center distance of the reticle pattern causing hot spots or defects is P-5 nm; the value range of the first preset threshold is as follows: less than P nm and greater than P-5 nm.
In some embodiments, the step of establishing the center-to-center distance rule of the mask pattern further includes: establishing a central distance rule of the patterns of the mask plate in the horizontal direction; or establishing a central distance rule of the patterns of the mask plate in the vertical direction; or the center distance rules of the patterns of the mask plate in the horizontal direction and the vertical direction are established simultaneously. For example, assuming that the minimum center-to-center distance of the OPC target pattern in the vertical direction is P nm, the critical value of the pattern center-to-center distance of the reticle pattern causing hot spots or defects in the vertical direction is P-5 nm; the established center-to-center distance rule is that the minimum pattern center-to-center distance of the mask plate pattern after the optical proximity correction in the vertical direction is greater than or equal to a first preset threshold, wherein the value range of the first preset threshold is less than P nanometers and greater than P-5 nanometers.
Regarding step S2, the edge of the target pattern for optical proximity correction is segmented based on a preset rule. Specifically, the edge may be sliced on the target pattern following the mask manufacturing rule, and an initial movement amount of each edge segment (i.e., a slicing unit) may also be set. The specific segmentation method in this step may refer to the existing method for segmenting the edge of the target pattern, and is not described herein again.
And S3, moving the divided edge sections, and performing mask rule verification on all the moved edge sections to obtain a first mask plate pattern after optical proximity correction. Specifically, each edge segment divided in step S2 is moved, and mask rule verification is performed on the moved pattern. The mask rule verification is performed to ensure that the pattern obtained after the movement does not violate the process limitation of mask manufacturing, for example, the mask manufacturing process requires that the pattern pitch of the mask plate is not less than a certain value, otherwise, the mask plate cannot be manufactured.
In some embodiments, the step of performing mask rule verification on all the edge segments after the moving further includes: and for the edge segments violating the mask rule, withdrawing the last moving operation and performing the mask rule verification again until all the edge segments pass the mask rule verification.
And S4, performing center distance rule verification on all edge sections of the acquired first mask plate pattern, and finding out all edge sections violating the center distance rule. Particularly, the center distance of the mask pattern is much smaller than the center distance of the target pattern in all edge sections violating the center distance rule, so that hot spots and defects can be caused.
In some embodiments, the step of finding all edge segments that violate the inter-center distance rule further comprises: 1) Finding out all relevant related edge units of the edge sections of the center distance of the pattern to be calculated; 2) Calculating the center distance of the corresponding pattern of the edge section according to the distance between the edge section and the corresponding associated edge unit; 3) If the calculated center distance of the corresponding pattern is smaller than the first preset threshold, the edge segment and the edge segment where the corresponding associated edge unit is located are both edge segments which violate the center distance rule.
In some embodiments, the step of finding all edge segments that violate the inter-center distance rule further comprises: finding all first associated edge cells B1, B2, \ 8230;, bm in the same polygon as the edge segment A1 and opposite thereto; finding out all second associated edge units Ci1, ci2, \ 8230;, cin which respectively correspond to the edge segment A1 and each first associated edge unit Bi (i =1, 2, \8230;, m) in a polygon adjacent to the edge segment A1; finding all third associated edge cells Dij1, dij2, \ 8230;, dijp, in the same polygon as the second associated edge cells Cij (i =1, 2, \8230;, m, j =1, 2, \8230;, n) and opposite thereto; the corresponding pattern center spacing Pijk (i =1, 2, \8230;, m, j =1, 2, \8230; n, k =1, 2, \8230; p) of the edge segment A1 is calculated using the following formula: pijk = W (A1, bi)/2 + W (A1, cij) + W (Cij, dijk)/2, where W (A1, bi) is a distance between the edge segment A1 and the first associated edge unit Bi, W (A1, cij) is a distance between the edge segment A1 and the second associated edge unit Cij, and W (Cij, dijk) is a distance between the second associated edge unit Cij and the third associated edge unit Dijk; if the calculated center distance Pijk of the corresponding pattern is smaller than the first preset threshold, the edge segments A1 and the edge segments where the first associated edge unit Bi, the second associated edge unit Cij, and the third associated edge unit Dijk are located are all edge segments violating the center distance rule.
As shown in fig. 3, taking as an example the establishment of the center-to-center distance rule of the mask pattern in the vertical direction, the center-to-center distance of the horizontal edge segment is checked; the line segment between two dots in the figure is an edge segment. In this embodiment, when calculating the vertical pattern center-to-center distance of the horizontal edge segment A1, first find all relevant associated edge units of A1, specifically: firstly, finding out all first associated edge units B1 and B2 which are in the same polygon with the edge section A1 and are opposite to the edge section A1; finding all second associated edge units C11, C12 and C21 corresponding to the edge segment A1 and each first associated edge unit B1 and B2 respectively in the polygon adjacent to the edge segment A1 (wherein C11 and C12 correspond to B1, and C21 corresponds to B2); all the third associated edge cells D111, D121, D211, D212 are found, which are in the same polygon as the second associated edge cells C11, C12, C21 and are opposite to the second associated edge cells C11, C12, C21 (wherein D111 corresponds to C11, D121 corresponds to C12, and D211, D212 corresponds to C21). In summary, all the associated edge cells associated with the edge segment A1 in FIG. 3 are B1, B2, C11, C12, C21, D111, D121, D211, and D212.
Defining W (X, Y) as the distance between edge segments X, Y, then A1 corresponds to a pattern center spacing Pijk = W (A1, bi)/2 + W (A1, cij) + W (Cij, dijk)/2. If the calculated center distance Pijk of the corresponding pattern is smaller than the corresponding first preset threshold in the center distance rule established in step S1, the edge segments A1 and the edge segments where Bi, cij, dijk are located are all edge segments that violate the center distance rule. For example, if P211 is smaller than the first preset threshold, the edge segment A1 and the edge segments (line segments between two dots) where the associated edge units B2, C21, and D211 are located are all edge segments that violate the inter-center distance rule.
Referring to fig. 2, in step S5, the motion correction is performed on each of the edge segments found, and the mask rule verification and the center-to-center rule verification are performed again to obtain a second mask pattern. Specifically, all edge segments violating the center-to-center distance rule found in step S4 are corrected, so that the finally obtained pattern center-to-center distance of the mask pattern is not smaller than a preset threshold, hot spots and defects caused by too small pattern center-to-center distance of the mask pattern are effectively avoided, and the yield of wafer production is improved.
In some embodiments, the step of performing motion correction on each of the edge segments found further comprises: for each of the edge segments found, determining whether the last move operation will reduce the center-to-center distance of the associated pattern; if yes, withdrawing the moving operation of the corresponding edge segment; if not, the moving operation of the corresponding edge segment is reserved. For all edge segments found in step S4 that violate the inter-center distance rule, the last movement thereof reduces the inter-center distance of the pattern; by withdrawing this movement of the respective edge segment, the centre-to-centre spacing of the edge segment can be increased to comply with the centre-to-centre spacing rule. Referring again to FIG. 3, assume that the edge segment A1 and the edge segments in which the associated edge cells B2, C21, and D212 are located are edge segments that violate the inter-center distance rule, and the last move of edge segment A1 is up to 1 nm, the last move of edge segment in which the associated edge cell B2 is down to 2 nm, and the last move of edge segments in which the associated edge cells C21 and D212 are located is 0 (i.e., no move). Then in this movement, the movement of edge segment A1 increases the associated pattern center-to-center distance, the movement of the edge segment associated with edge cell B2 decreases the associated pattern center-to-center distance, and the edge segments associated with edge cells C21 and D212 do not change the associated pattern center-to-center distance. Thus, the movement of the edge segment in which the associated edge cell B2 is located is withdrawn, i.e., the edge segment in which the associated edge cell B2 is located is moved up to the current position by 2 nm, while the movement of the edge segment A1, i.e., the position of the edge segment A1, is preserved, thereby increasing the associated pattern center-to-center distance. Other motion correction operations may be employed in other embodiments to increase the associated pattern center-to-center spacing.
In some embodiments, the step of performing motion correction on each of the edge segments found and performing the mask rule verification and the inter-center distance rule verification again further comprises: and after the movement correction processing of all the edge sections is finished, the mask rule verification and the center-to-center distance rule verification are carried out again. After the correction processing of all the edge sections violating the inter-center distance rule is finished, the mask rule verification and the inter-center distance rule check are carried out, so that the unified processing is facilitated, and the efficiency is improved.
And S6, simulating the acquired second mask pattern by using the optical proximity correction model and checking the edge position error to acquire a final mask pattern after the optical proximity correction. Specifically, simulating the mask plate pattern obtained in the step S5 by using an optical proximity correction model, and carrying out edge position error check on the contour obtained by simulation corresponding to an optical proximity correction target pattern; and when the edge position error of the simulation outline of the obtained mask plate pattern is smaller than a second preset threshold value, taking the current mask plate pattern as the final mask plate pattern after the optical proximity correction.
In some embodiments, the step of performing simulation and edge position error inspection on the obtained second mask pattern by using the optical proximity correction model to obtain a final mask pattern after optical proximity correction further includes: carrying out edge position error inspection on a target pattern of optical proximity correction corresponding to a simulation outline obtained by simulating the obtained second mask pattern; if the edge position error is smaller than a second preset threshold, taking the current second mask pattern as the final mask pattern after the optical proximity correction, otherwise, calculating the movement amount required by each edge section according to the edge position error, and performing the edge section movement, mask rule verification, center distance rule verification, simulation and edge position error check operation of the next round; namely, the steps S3 to S6 are repeated until the edge position error of the simulation profile of the obtained mask pattern is smaller than the preset threshold.
The following describes the flow of the method for optical proximity correction of dense patterns according to the present invention with reference to FIG. 4. The optical proximity correction process of the dense pattern in this embodiment specifically includes: 1) Segmenting the edge of the target pattern subjected to optical proximity correction according to a certain rule; 2) Moving each edge segment; 3) Judging whether the moved pattern edge section passes the mask rule verification or not, if so, executing the next step, otherwise, withdrawing the last moving operation and carrying out the mask rule verification again; 4) Judging whether the pattern edge segments passing the mask rule verification pass the center distance rule verification, if so, executing the next step, otherwise, finding out all edge segments violating the center distance rule, withdrawing the last moving operation of the edge segments, of which the last moving operation can reduce the relevant pattern center distance, and performing the mask rule verification and the center distance rule verification again; 5) Carrying out simulation and edge position error check; 6) And judging whether the edge position error is smaller than a set threshold value, if so, obtaining a final mask plate pattern, otherwise, calculating the movement amount required by each edge section according to the edge position error, and returning to the step 2) to perform the next round of edge section movement, mask rule verification, center spacing rule verification, simulation and edge position error checking operation.
Based on the same inventive concept, the invention also provides an optical proximity correction device for dense patterns. The provided optical proximity correction device for the dense patterns can adopt the optical proximity correction method for the dense patterns as shown in fig. 2 to add the constraint of the pattern center distance, thereby avoiding hot spots and defects caused by the undersized pattern center distance of the mask plate and improving the yield of wafer production.
Please refer to fig. 5, which is a block diagram illustrating a dense pattern optical proximity correction apparatus according to an embodiment of the present invention. As shown in fig. 5, the optical proximity correction apparatus for dense patterns includes: a creation module 51, a segmentation module 52, a first verification module 53, a second verification module 54, a correction module 55, and a simulation module 56.
Specifically, the establishing module 51 is configured to establish a center-to-center distance rule of the mask patterns, where the center-to-center distance rule is that the pattern center-to-center distance of the mask patterns after the optical proximity correction is greater than or equal to a first preset threshold. The segmentation module 52 is configured to segment the edge of the OPC corrected target pattern based on a preset rule. The first verification module 53 is configured to move the divided edge segments, and perform mask rule verification on all the moved edge segments to obtain a first mask pattern after optical proximity correction. The second verification module 54 is configured to perform the inter-center distance rule verification on all edge segments of the acquired first mask pattern, and find out all edge segments violating the inter-center distance rule. The correction module 55 is configured to perform motion correction on each of the edge segments found out, and perform the mask rule verification and the center-to-center distance rule verification again to obtain a second mask pattern. The simulation module 56 is configured to perform simulation and edge position error check on the obtained second mask pattern by using an optical proximity correction model, so as to obtain a final mask pattern after optical proximity correction. The working modes of the modules can refer to the description of the corresponding steps in the method for correcting the optical proximity of the dense pattern shown in fig. 2, and are not described herein again.
According to the optical proximity correction method and device, the central distance rule of the patterns of the mask plate is preset, and the constraints of the central distances of the patterns in the horizontal direction, the vertical direction or the horizontal and vertical directions are added in the process of performing optical proximity correction on the dense patterns; after each movement of the edge segments, center-to-center distance rule checking is carried out on the current mask plate pattern, and all the edge segments violating the rules are found; for a certain edge segment which violates the rule, if the last movement operation of the edge segment can reduce the relevant pattern center distance, the edge segment is withdrawn, so that the pattern center distance of the finally obtained mask pattern is ensured not to be smaller than a preset threshold value, hot spots and defects caused by the undersize pattern center distance of the mask pattern are effectively avoided, and the yield of wafer production is improved.
Based on the same inventive concept, the invention also provides an electronic device, which comprises a memory, a processor and a computer executable program stored on the memory and capable of running on the processor; the processor, when executing the computer executable program, implements the steps of the method for optical proximity correction of dense patterns as shown in FIG. 2.
It is within the scope of the inventive concept that embodiments may be described and illustrated in terms of modules that perform one or more of the described functions. These modules (which may also be referred to herein as cells, etc.) may be physically implemented by analog and/or digital circuits, such as logic gates, integrated circuits, microprocessors, microcontrollers, memory circuits, passive electronic components, active electronic components, optical components, hardwired circuits, etc., and may optionally be driven by firmware and/or software. The circuitry may be implemented in one or more semiconductor chips, for example. The circuitry making up the modules may be implemented by dedicated hardware, or by a processor (e.g., one or more programmed microprocessors and associated circuitry), or by a combination of dedicated hardware to perform some of the functions of the module and a processor to perform other functions of the module. Each module of an embodiment may be physically separated into two or more interactive and discrete modules without departing from the scope of the inventive concept. Likewise, the modules of the embodiments may be physically combined into more complex modules without departing from the scope of the inventive concept.
In general, terms may be understood, at least in part, from their usage in context. For example, the term "one or more" as used herein may be used in a singular sense to describe a feature, structure, or characteristic, or may be used in a plural sense to describe a feature, structure, or combination of features, at least in part, depending on the context. Additionally, the term "based on" may be understood as not necessarily intended to convey an exclusive set of factors, but may instead allow for the presence of other factors not necessarily explicitly described, again depending at least in part on the context.
It should be noted that the terms "comprising" and "having," and variations thereof, as used in the context of the present invention, are intended to cover a non-exclusive inclusion. The terms "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order, unless otherwise indicated by the context, it being understood that the data so used may be interchanged where appropriate. In addition, the embodiments and features of the embodiments in the present invention may be combined with each other without conflict. Moreover, in the foregoing description, descriptions of well-known components and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention. In the above embodiments, each embodiment is described with emphasis on differences from other embodiments, and the same/similar parts between the embodiments may be referred to each other.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. An optical proximity correction method for dense patterns is characterized by comprising the following steps: establishing a center distance rule of the patterns of the mask plate, wherein the center distance rule is that the pattern center distance of the patterns of the mask plate after optical proximity correction is larger than or equal to a first preset threshold value; segmenting the edge of the target pattern subjected to optical proximity correction based on a preset rule; moving the divided edge sections, and performing mask rule verification on all the moved edge sections to obtain a first mask plate pattern after optical proximity correction; performing center distance rule verification on all edge segments of the obtained first mask plate pattern, and finding out all edge segments violating the center distance rule; performing movement correction on each found edge section, and performing mask rule verification and center distance rule verification again to obtain a second mask plate pattern; simulating the obtained second mask plate pattern by using an optical proximity correction model and checking the edge position error to obtain a final mask plate pattern after optical proximity correction; wherein said step of finding all edge segments that violate said inter-center distance rule further comprises: finding all first associated edge cells B1, B2, \ 8230;, bm in the same polygon as the edge segment A1 and opposite thereto; finding out all second associated edge cells Ci1, ci2, \8230;, cin corresponding to the edge segment A1 and each first associated edge cell Bi respectively in a polygon adjacent to the edge segment A1; finding out all third associated edge units Dij1, dij2, \8230, dijp which are opposite to the second associated edge units Cij in the same polygon; the corresponding pattern center spacing Pijk for the edge segment A1 is calculated using the following equation: pijk = W (A1, bi)/2 + W (A1, cij) + W (Cij, dijk)/2, wherein i =1, 2, \ 8230;, m; j =1, 2, \8230, n; k =1, 2, \ 8230;, p; w (A1, bi) is a distance between the edge segment A1 and the first associated edge unit Bi, W (A1, cij) is a distance between the edge segment A1 and the second associated edge unit Cij, and W (Cij, dijk) is a distance between the second associated edge unit Cij and the third associated edge unit Dijk; if the calculated center distance Pijk of the corresponding pattern is smaller than the first preset threshold, the edge segments A1 and the edge segments where the first associated edge unit Bi, the second associated edge unit Cij, and the third associated edge unit Dijk are edge segments that violate the center distance rule.
2. The method of claim 1, wherein the first predetermined threshold is less than a minimum on-center distance of the OPC corrected target pattern and greater than a pattern on-center distance threshold of a reticle pattern that may cause hot spots or defects.
3. The method of claim 1, wherein the step of establishing the center-to-center spacing rule of the mask pattern further comprises: establishing a central distance rule of the patterns of the mask plate in the horizontal direction; or establishing a central distance rule of the patterns of the mask plate in the vertical direction; or the center distance rule of the mask plate patterns in the horizontal direction and the vertical direction is established simultaneously.
4. The method of claim 1, wherein the step of performing mask rule verification on all the edge segments after the moving further comprises: and for the edge segments violating the mask rule, withdrawing the last moving operation and performing the mask rule verification again until all the edge segments pass the mask rule verification.
5. The method of claim 1, wherein the step of finding all edge segments that violate the inter-center distance rule further comprises: finding out all relevant related edge units of the edge sections of the center distance of the pattern to be calculated; calculating the corresponding pattern center distance of the edge section according to the distance between the edge section and the corresponding associated edge unit; if the calculated center distance of the corresponding pattern is smaller than the first preset threshold, the edge segment and the edge segment where the corresponding associated edge unit is located are both edge segments which violate the center distance rule.
6. The method of claim 1, wherein the step of performing motion correction on each of the edge segments found further comprises: for each edge segment found out, judging whether the latest moving operation can reduce the center distance of the relevant pattern; if yes, withdrawing the moving operation of the corresponding edge segment; if not, the moving operation of the corresponding edge segment is reserved.
7. The method of claim 1, wherein the step of performing motion correction on each of the edge segments found and performing the mask rule verification and the inter-center distance rule verification again further comprises: and after the movement correction processing of all the edge sections is finished, the mask rule verification and the center-to-center distance rule verification are carried out again.
8. The method according to claim 1, wherein the step of performing simulation and edge position error check on the obtained second mask pattern by using the OPC model to obtain the final mask pattern after OPC further comprises: performing edge position error inspection on a target pattern of optical proximity correction corresponding to a simulation outline obtained by simulating the obtained second mask plate pattern; if the edge position error is smaller than a second preset threshold value, taking the current second mask plate pattern as the final mask plate pattern after the optical proximity correction, otherwise, calculating the movement amount required by each edge section according to the edge position error, and performing the edge section movement, mask rule verification, center spacing rule verification, simulation and edge position error check operation of the next round.
9. An optical proximity correction apparatus, comprising: the device comprises an establishing module, a calculating module and a processing module, wherein the establishing module is used for establishing a center-to-center spacing rule of the patterns of the mask plate, and the center-to-center spacing rule is that the pattern center-to-center spacing of the patterns of the mask plate after optical proximity correction is larger than or equal to a first preset threshold value; the segmentation module is used for segmenting the edge of the target pattern subjected to optical proximity correction based on a preset rule; the first verification module is used for moving the divided edge sections and performing mask rule verification on all the moved edge sections to obtain a first mask plate pattern after optical proximity correction; the second verification module is used for verifying the center distance rule of all the edge sections of the acquired first mask plate pattern and finding out all the edge sections violating the center distance rule; the correction module is used for carrying out mobile correction on each found edge section and carrying out mask rule verification and center distance rule verification again to obtain a second mask plate pattern; the simulation module is used for simulating the obtained second mask pattern and checking the edge position error by using the optical proximity correction model so as to obtain the final mask pattern after the optical proximity correction; wherein the second validation module further finds all edge segments that violate the inter-center distance rule by: finding all first associated edge cells B1, B2, \ 8230;, bm in the same polygon as the edge segment A1 and opposite thereto; finding out all second associated edge cells Ci1, ci2, \8230;, cin corresponding to the edge segment A1 and each first associated edge cell Bi respectively in a polygon adjacent to the edge segment A1; finding out all third associated edge units Dij1, dij2, \8230, dijp which are opposite to the second associated edge units Cij in the same polygon; the corresponding pattern center spacing Pijk for the edge segment A1 is calculated using the following equation: pijk = W (A1, bi)/2 + W (A1, cij) + W (Cij, dijk)/2, wherein i =1, 2, \ 8230;, m; j =1, 2, \8230, n; k =1, 2, \ 8230;, p; w (A1, bi) is a distance between the edge segment A1 and the first associated edge unit Bi, W (A1, cij) is a distance between the edge segment A1 and the second associated edge unit Cij, and W (Cij, dijk) is a distance between the second associated edge unit Cij and the third associated edge unit Dijk; if the calculated center distance Pijk of the corresponding pattern is smaller than the first preset threshold, the edge segments A1 and the edge segments where the first associated edge unit Bi, the second associated edge unit Cij, and the third associated edge unit Dijk are edge segments that violate the center distance rule.
10. An electronic device comprising a memory, a processor and a computer-executable program stored on the memory and executable on the processor, wherein the processor implements the steps of the optical proximity correction method according to any one of claims 1 to 8 when executing the computer-executable program.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101458448A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Optical close range correction and photo mask production method |
| JP2010085461A (en) * | 2008-09-29 | 2010-04-15 | Fujitsu Microelectronics Ltd | Method and apparatus for verification of optical proximity correction pattern |
| CN103091969A (en) * | 2011-10-28 | 2013-05-08 | 上海华虹Nec电子有限公司 | Optical proximity effect correction method for opposite wire ends or nearly opposite wire ends |
| CN109932865A (en) * | 2017-12-18 | 2019-06-25 | 三星电子株式会社 | Optical near-correction (OPC) method and the method for manufacturing mask using the OPC method |
| CN112802007A (en) * | 2021-02-20 | 2021-05-14 | 福建省晋华集成电路有限公司 | Pattern hot spot detection method, pattern hot spot verification method and optical proximity correction method |
| CN112987485A (en) * | 2019-12-18 | 2021-06-18 | 中芯国际集成电路制造(北京)有限公司 | Method for correcting mask graph, mask and method for forming semiconductor structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3957504B2 (en) * | 2001-12-21 | 2007-08-15 | Ｎｅｃエレクトロニクス株式会社 | Photomask and semiconductor device manufacturing method |
| JP4389222B2 (en) * | 2005-05-02 | 2009-12-24 | エルピーダメモリ株式会社 | How to create mask data |
-
2022
- 2022-11-09 CN CN202211395250.0A patent/CN115437210B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101458448A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Optical close range correction and photo mask production method |
| JP2010085461A (en) * | 2008-09-29 | 2010-04-15 | Fujitsu Microelectronics Ltd | Method and apparatus for verification of optical proximity correction pattern |
| CN103091969A (en) * | 2011-10-28 | 2013-05-08 | 上海华虹Nec电子有限公司 | Optical proximity effect correction method for opposite wire ends or nearly opposite wire ends |
| CN109932865A (en) * | 2017-12-18 | 2019-06-25 | 三星电子株式会社 | Optical near-correction (OPC) method and the method for manufacturing mask using the OPC method |
| CN112987485A (en) * | 2019-12-18 | 2021-06-18 | 中芯国际集成电路制造(北京)有限公司 | Method for correcting mask graph, mask and method for forming semiconductor structure |
| CN112802007A (en) * | 2021-02-20 | 2021-05-14 | 福建省晋华集成电路有限公司 | Pattern hot spot detection method, pattern hot spot verification method and optical proximity correction method |
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