CN115394758A - Gallium oxide Schottky diode and preparation method thereof - Google Patents
Gallium oxide Schottky diode and preparation method thereof Download PDFInfo
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- CN115394758A CN115394758A CN202210846604.2A CN202210846604A CN115394758A CN 115394758 A CN115394758 A CN 115394758A CN 202210846604 A CN202210846604 A CN 202210846604A CN 115394758 A CN115394758 A CN 115394758A
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 120
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 120
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 122
- 239000002184 metal Substances 0.000 claims abstract description 122
- 238000000034 method Methods 0.000 claims description 45
- 229920002120 photoresistant polymer Polymers 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 29
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 26
- 239000000126 substance Substances 0.000 claims description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 16
- 239000010931 gold Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 12
- 238000005566 electron beam evaporation Methods 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 229910052741 iridium Inorganic materials 0.000 claims description 10
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 229910052763 palladium Inorganic materials 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 239000010937 tungsten Substances 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 241000252506 Characiformes Species 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
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- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
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- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
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- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- -1 siNx Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- 229910052682 stishovite Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The embodiment of the invention discloses a gallium oxide Schottky diode and a preparation method thereof, and in a specific example, the gallium oxide Schottky diode comprises the following components from bottom to top: the device comprises a first ohmic contact metal layer, a second ohmic contact metal layer, a gallium oxide base layer and a gallium oxide intrinsic layer, wherein a field plate is arranged above the gallium oxide intrinsic layer; a Schottky electrode and a floating metal ring are arranged above the gallium oxide intrinsic layer and the field plate; the floating metal rings comprise 1-3 metal rings arranged at equal ring spacing, the ring spacing is 1-7 mu m, and the ring width is 0.5-15 mu m. According to the gallium oxide Schottky diode, the field plate and the floating metal ring are arranged above the gallium oxide intrinsic layer, so that breakdown voltage is dispersed, the electric field intensity distribution of the gallium oxide Schottky diode is uniform, and the breakdown resistance of the diode is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor materials and devices, in particular to a gallium oxide Schottky diode and a preparation method thereof.
Background
The gallium oxide base is used as a fourth generation ultra-wide forbidden band semiconductor material, has the characteristics of ultra-wide forbidden band width, high breakdown field strength, high throwing and drifting rates and the like, and becomes an ideal material for preparing ultra-high power and ultra-high frequency electronic devices. The Schottky diode is used as a key component in the application of the gallium oxide-based electronic device, and plays a key role in parameters of current density, working temperature, high power performance and the like of a circuit.
At present, the gallium oxide schottky diode usually has the defect of insufficient breakdown voltage, and the phenomenon of low-voltage breakdown often occurs in the test process. The above disadvantages directly lead to the overall performance degradation of the schottky diode, limiting its application range and environment.
Disclosure of Invention
The present invention is directed to a gan schottky diode and a method for manufacturing the same, which solves at least one of the drawbacks of the prior art and improves the breakdown voltage of the gan schottky diode.
To this end, an aspect of the present invention provides a gan schottky diode, comprising, from bottom to top: a first ohmic contact metal layer, a second ohmic contact metal layer, a gallium oxide base layer and a gallium oxide intrinsic layer,
a field plate is arranged above the gallium oxide intrinsic layer;
a Schottky electrode and a floating metal ring are arranged above the gallium oxide intrinsic layer and the field plate;
the floating metal rings comprise 1-3 metal rings arranged at equal ring spacing, the ring spacing is 1-7 mu m, and the ring width is 0.5-15 mu m.
Optionally, the gallium oxide substrate is made of P-type doped gallium oxide or N-type doped gallium oxide.
The invention provides a method for preparing the gallium oxide Schottky diode, which comprises the following steps:
s1, selecting a gallium oxide substrate, and cleaning the gallium oxide substrate by using standard organic and inorganic cleaning processes;
s2, placing the gallium oxide substrate in a metal organic compound chemical vapor deposition or molecular beam epitaxy process to implement an epitaxy process, and extending a gallium oxide intrinsic layer on the front side of the gallium oxide substrate;
s3, depositing on the back of the gallium oxide material substrate by using an electron beam evaporation technology to form a second ohmic contact metal layer;
s4, depositing and forming a first ohmic contact metal layer on the back surface of the second ohmic contact metal layer by using a magnetron sputtering or electron beam evaporation process;
s5, rapidly annealing the second ohmic contact metal layer and the first ohmic contact metal layer at a high temperature to complete the manufacture of the gallium oxide-based ohmic contact structure;
s6, coating a layer of photoresist on the front surface of the gallium oxide intrinsic layer, carrying out patterning treatment, forming a field plate layer on the gallium oxide intrinsic layer by using a plasma enhanced chemical vapor deposition, magnetron sputtering or atomic layer deposition process, and stripping to obtain a field plate;
and S7, coating a layer of photoresist on the front surface of the field plate, carrying out patterning treatment, depositing a metal layer and an inert chemical metal layer above the field plate and the gallium oxide intrinsic layer by using a metal coating technology, and stripping to obtain the Schottky electrode and the floating metal ring.
Optionally, the gallium oxide substrate is cleaned in step S1 using standard organic and inorganic cleaning processes, with the following process conditions:
and (3) carrying out water bath at 200 ℃, and treating the gallium oxide matrix by using a piranha solution for 15 minutes.
Optionally, the thickness of the gallium oxide intrinsic layer in step S2 is 20nm to 10 μm; after the formation, the formed sample is respectively heated in water bath by using alcohol, acetone, isopropanol and deionized water, and is ultrasonically cleaned for 5min.
Optionally, the second ohmic contact metal layer is made of titanium and has a thickness of 2-200nm;
the first ohmic contact metal layer is made of inert metal with poor mutual diffusivity, the material of the first ohmic contact metal layer is gold, tungsten, iridium, platinum or palladium, and the thickness of the first ohmic contact metal layer is 20-400nm.
Optionally, step S6 includes:
coating a layer of photoresist on the gallium oxide intrinsic layer and carrying out patterning design to obtain a window for depositing the chemical inert medium layer; removing the photoresist on the surface of the sample and the chemical inert medium layer above the photoresist to obtain a field plate after the deposition of the chemical inert medium layer is finished,
wherein the chemically inert dielectric layer is made of SiO 2 、SiNx、Al 2 O 3 、ZrO 2 Or HfO 2 The thickness of the film is 2-200nm.
Optionally, step S7 includes:
spin-coating a layer of photoresist on the surfaces of the field plate and the gallium oxide intrinsic layer and patterning the photoresist to obtain windows for depositing a Ni metal layer and an inert metal layer;
depositing the Ni metal layer and the chemical inert metal layer on the surfaces of the gallium oxide intrinsic layer and the field plate structure in sequence, wherein the thickness of the Ni metal layer is 2-200nm; the chemical inert metal layer is made of gold, tungsten, iridium, platinum or palladium, and the thickness of the chemical inert metal layer is 20-400nm;
after deposition is finished, the sample is soaked in acetone to be stripped in a water bath at the temperature of 80 ℃, and photoresist on the surface of the sample and metal above the photoresist are removed to form a Schottky contact electrode and a metal ring.
Optionally, the second chemically inert metal layer is made of gold, tungsten, iridium, platinum or palladium, and the thickness of the second chemically inert metal layer is 20-400nm;
and removing the photoresist on the surface of the sample and the metal above the photoresist after the deposition is finished, and forming a Schottky contact electrode.
Optionally, removing the photoresist on the surface of the sample and the metal above the photoresist by soaking the sample in acetone to perform 80 ℃ water bath stripping.
The invention has the following beneficial effects:
according to the gallium oxide Schottky diode provided by the invention, the field plate and the floating metal ring are arranged above the gallium oxide intrinsic layer, so that the breakdown voltage is dispersed, the electric field intensity distribution of the gallium oxide Schottky diode is homogenized, and the breakdown resistance of the diode is improved.
Drawings
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
Fig. 1 shows a schematic structural diagram of a gan schottky diode according to an embodiment of the present invention.
Fig. 2 shows a flowchart of a method for manufacturing a gan schottky diode according to an embodiment of the present invention.
Fig. 3 is a flow chart illustrating a method for fabricating a gan schottky diode according to another embodiment of the present invention.
Detailed Description
In order to more clearly illustrate the present invention, the present invention will be further described with reference to the following examples and the accompanying drawings. Similar parts in the figures are denoted by the same reference numerals. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and is not to be taken as limiting the scope of the invention.
In order to improve the breakdown resistance of the diode, an embodiment of the present invention provides a gallium oxide schottky diode, as shown in fig. 1, including a first ohmic contact metal layer 10, a second ohmic contact metal layer 20, a gallium oxide base layer 30, a gallium oxide intrinsic layer 40;
a field plate 50 is arranged above the gallium oxide intrinsic layer 40;
a Schottky contact electrode 61 is arranged above the gallium oxide intrinsic layer 40 and the field plate 50;
a floating metal ring 62 is disposed above the field plate 50.
In a specific embodiment, the number of floating metal rings is 1, 2 or 3, the ring pitch is 0-7 μm, such as 2, 3, 4, 5, 6, 7 μm, and the ring width is 0-15 μm, such as 3, 5, 6, 8, 10, 15 μm.
It should be noted that as the ring pitch increases, the voltage resistance of the diode increases, but after the ring pitch is larger than 7 μm, the voltage resistance of the diode formed by the ring pitch decreases; along with the increase of the ring width, the voltage resistance of the diode is continuously increased, and the ring width of the floating metal ring is 0-15 mu m in combination with the actual situation; under the same condition, when the number of the floating metal rings is 3, the breakdown-resistant effect is best.
According to the gallium oxide Schottky diode provided by the scheme, the field plate and the floating metal ring are arranged above the gallium oxide intrinsic layer, so that the breakdown voltage is dispersed, the electric field intensity distribution of the gallium oxide Schottky diode is homogenized, and the breakdown resistance of the diode is improved.
In one embodiment, the first ohmic contact metal layer 10 is made of gold, tungsten, iridium, platinum or palladium, and has a thickness of 20-400nm.
In one embodiment, the material of the second ohmic contact metal layer 20 is, for example, titanium, and the thickness thereof is 2-200nm.
In one possible implementation, the gallium oxide intrinsic layer 40 has a thickness of 20nm to 10 μm.
In a possible implementation manner, the field plate 50 is made of SiO2, siNx, or Al 2 O 3 、ZrO 2 Or HfO 2 The thickness of the high-voltage-resistant diode is 2-200nm, and the high-voltage-resistant diode is used for dispersing an electric field and improving the high-voltage resistance of the diode,
in one possible implementation, the schottky contact electrode 61 includes a first schottky electrode metal layer and a second schottky electrode metal layer sequentially disposed over the gallium oxide intrinsic layer 40 and the field plate 50, wherein,
the first Schottky electrode metal layer is made of nickel for example, and the thickness of the first Schottky electrode metal layer is 2-200nm; the second Schottky electrode metal layer is made of a material with a high dielectric constant, such as gold, tungsten, iridium, platinum or palladium, and has a thickness of 20-400nm.
In one possible implementation, the material of the gallium oxide substrate comprises P-type doped gallium oxide and N-type doped gallium oxide.
One embodiment of the present invention provides a method for manufacturing a gallium oxide schottky diode, as shown in fig. 2, the method includes the following steps:
s1, selecting a gallium oxide substrate, and cleaning the gallium oxide substrate by using standard organic and inorganic cleaning processes;
s2, placing the gallium oxide substrate in a metal organic compound chemical vapor deposition or molecular beam epitaxy process to implement an epitaxy process, and extending a gallium oxide intrinsic layer on the front side of the gallium oxide substrate;
s3, depositing a second ohmic contact metal layer on the back of the gallium oxide substrate by using an electron beam evaporation technology;
s4, depositing and forming a first ohmic contact metal layer on the back surface of the second ohmic contact metal layer by using a magnetron sputtering or electron beam evaporation process;
s5, rapidly annealing the second ohmic contact metal layer and the first ohmic contact metal layer at a high temperature to finish the manufacture of the gallium oxide-based ohmic contact structure;
s6, forming a field plate layer above the gallium oxide intrinsic layer by using a plasma enhanced chemical vapor deposition, magnetron sputtering or atomic layer deposition process, and stripping to obtain a field plate;
and S7, depositing a metal layer and an inert chemical metal layer above the field plate and the gallium oxide intrinsic layer by using a metal coating technology, and stripping to obtain a Schottky electrode and a floating metal ring.
According to the preparation method of the gallium oxide Schottky diode, the floating metal rings are arranged above the gallium oxide intrinsic layer and the field plate, so that the breakdown voltage is dispersed, the electric field intensity distribution of the gallium oxide Schottky diode is homogenized, and the breakdown resistance of the diode is improved; the preparation method is simple, the Schottky electrode and the floating metal ring can be simultaneously prepared, and the preparation efficiency is improved.
In a specific embodiment, the metal coating technology comprises a magnetron sputtering coating technology and an electron beam evaporation technology.
In one specific embodiment, the gallium oxide substrate is cleaned in step S1 using standard organic and inorganic cleaning processes under the following process conditions:
and (3) carrying out water bath at 200 ℃, and treating the gallium oxide matrix by using a piranha solution for 15 minutes.
Specifically, the piranha solution is, for example, 3:1 sulfuric acid and 30% hydrogen peroxide solution.
In a specific embodiment, the thickness of the gallium oxide intrinsic layer in step S2 is 20nm to 10 μm; after the formation, the formed sample is respectively heated in water bath by using alcohol, acetone, isopropanol and deionized water, and is ultrasonically cleaned for 5min.
In a specific embodiment, the second ohmic contact metal layer is made of titanium and has a thickness of 2-200nm, such as 2, 18, 55, 150, 180nm; the first ohmic contact metal layer is made of inert metal with poor mutual diffusivity, the material of the first ohmic contact metal layer is gold, tungsten, iridium, platinum or palladium, and the thickness of the first ohmic contact metal layer is 20-400nm.
Specifically, a gallium oxide substrate is placed in an electron beam evaporation device, and metal coating is performed on the back surface of the gallium oxide substrate, wherein the experimental conditions are as follows: room temperature and vacuum degree less than 5X 10 -5 Pa, 20nm Ti and 100nm Au were deposited sequentially.
In a specific embodiment, after the film coating is finished, rapid annealing treatment is carried out, the experimental conditions are nitrogen atmosphere, argon atmosphere or hydrogen atmosphere, the annealing temperature is 450-550 ℃, and the temperature is maintained for 30s, so that the reliability of the ohmic contact electrode is improved.
In a specific embodiment, step S6 includes:
coating a layer of photoresist on the gallium oxide intrinsic layer and carrying out patterning design to obtain a window for depositing the chemical inert medium layer; removing the photoresist on the surface of the sample and the chemical inert medium layer above the photoresist after the deposition of the chemical inert medium layer is finished to obtain a field plate structure,
wherein the chemical inert medium layer is made of SiO 2 、SiNx、Al 2 O 3 、ZrO 2 Or HfO 2 The thickness of the film is 2-200nm.
In a specific embodiment, the step S6 includes:
transferring the pattern on the mask plate to the surface of the gallium oxide intrinsic layer by using a photoetching technology;
placing the gallium oxide substrate with the mask pattern in magnetron sputtering equipment to coat a film on the surface of the gallium oxide intrinsic layer, wherein the experimental conditions are as follows: 150W, 1.8X 10 -1 Pa, 10min, medium layer type ZrO 2 ；
And after the film coating is finished, soaking the gallium oxide sample in acetone for water bath stripping at 80 ℃, and removing the photoresist generated in the photoetching technology.
In a specific embodiment, step S7 includes:
spin-coating a layer of photoresist on the surface of the field plate structure and the surface of the gallium oxide intrinsic layer and patterning the photoresist to obtain windows for depositing a Ni metal layer and an inert metal layer;
depositing the Ni metal layer and the chemical inert metal layer on the surfaces of the gallium oxide intrinsic layer and the field plate structure in sequence, wherein the thickness of the Ni metal layer is 2-200nm; the chemical inert metal layer is made of gold, tungsten, iridium, platinum or palladium, and the thickness of the chemical inert metal layer is 20-400nm;
after deposition is finished, the sample is soaked in acetone to be stripped in a water bath at the temperature of 80 ℃, and photoresist on the surface of the sample and metal above the photoresist are removed to form a Schottky contact electrode and a metal ring.
In a specific embodiment, step S7 includes:
transferring the pattern on the mask to the gallium oxide intrinsic layer and the field plate structure upper layer by using a photoetching technology;
placing a sample with a mask pattern in electron beam evaporation equipment for metal coating, wherein the experimental conditions are as follows: room temperature and vacuum degree less than 5X 10 -5 Pa, depositing 20nm Ni and 100nm Au in sequence, wherein the number of the metal rings is 1, the ring spacing is 5 mu m, and the length of the field plate is 5 mu m.
And after the film coating is finished, soaking the gallium oxide sample in acetone for water bath stripping at 80 ℃, and removing the photoresist generated in the photoetching technology.
In one specific embodiment, as shown in fig. 3, the schottky high voltage diode is fabricated by the following steps:
first, in a 200 ℃ water bath, using 3:1, treating the gallium oxide material substrate by using the mixed solution of sulfuric acid and hydrogen peroxide for 15min;
extending the front surface of the gallium oxide substrate by using an MOCVD process, wherein the epitaxial thickness is 10 mu m, and obtaining a gallium oxide intrinsic layer;
heating the sample with alcohol, acetone, isopropanol and deionized water in water bath, and ultrasonic cleaning for 5min;
the gallium oxide substrate is placed in an electron beam evaporation device to carry out metal coating on the back, and the experimental conditions are as follows: sequentially depositing Ti with the thickness of 20nm and Au with the thickness of 100nm at room temperature and the vacuum degree of less than 5 multiplied by 10 < -5 > Pa;
after the deposition is finished, annealing the gallium oxide sample at 550 ℃ for 30s;
transferring the pattern on the mask plate to the surface of the gallium oxide intrinsic layer by using a photoetching technology;
placing the gallium oxide substrate with the mask pattern in magnetron sputtering equipment to coat a film on the surface of the gallium oxide intrinsic layer, wherein the experimental conditions are as follows: 150W, 1.8 multiplied by 10-1Pa, 10min, medium layer type ZrO 2 ；
After the film coating is finished, soaking the gallium oxide sample in acetone for water bath stripping at 80 ℃, and removing photoresist generated in the photoetching technology;
transferring a pattern on a reticle to ZrO using a photolithographic technique 2 An upper layer;
placing the gallium oxide substrate with the mask pattern in an electronic book evaporation device for metal coating, wherein the experimental conditions are as follows: at room temperature, the vacuum degree is less than 5 multiplied by 10 < -5 > Pa, ni with the diameter of 20nm and Au with the diameter of 100nm are deposited in sequence, the number of metal rings is 1, the ring spacing is 5 mu m, and the length of a field plate is 5 mu m;
and after the film coating is finished, soaking the gallium oxide sample in acetone for water bath stripping at 80 ℃, and removing the photoresist generated in the photoetching technology.
In the description of the present invention, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a," "8230," "8230," or "comprising" does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.
It should be understood that the above-mentioned embodiments of the present invention are only examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention, and it will be obvious to those skilled in the art that other variations and modifications can be made on the basis of the above description, and all embodiments cannot be exhaustive, and all obvious variations and modifications belonging to the technical scheme of the present invention are within the protection scope of the present invention.
Claims (10)
1. A gallium oxide Schottky diode comprising, from bottom to top: a first ohmic contact metal layer, a second ohmic contact metal layer, a gallium oxide base layer and a gallium oxide intrinsic layer,
a field plate is arranged above the gallium oxide intrinsic layer;
a Schottky electrode and a floating metal ring are arranged above the gallium oxide intrinsic layer and the field plate;
the floating metal rings comprise 1-3 metal rings arranged at equal ring spacing, the ring spacing is 1-7 mu m, and the ring width is 0.5-15 mu m.
2. The diode of claim 1,
the gallium oxide substrate is made of P-type doped gallium oxide or N-type doped gallium oxide.
3. A method of manufacturing a diode according to any of claims 1-2, comprising the steps of:
selecting a gallium oxide substrate, and cleaning the gallium oxide substrate by using standard organic and inorganic cleaning processes;
placing the gallium oxide substrate in a metal organic compound chemical vapor deposition or molecular beam epitaxy process to implement an epitaxy process, and extending a gallium oxide intrinsic layer on the front side of the gallium oxide substrate;
depositing a second ohmic contact metal layer on the back of the gallium oxide material substrate by using an electron beam evaporation technology;
depositing and forming a first ohmic contact metal layer on the back of the second ohmic contact metal layer by using a magnetron sputtering or electron beam evaporation process;
rapidly annealing the second ohmic contact metal layer and the first ohmic contact metal layer at high temperature to complete the manufacture of the gallium oxide-based ohmic contact structure;
coating a layer of photoresist on the front surface of the gallium oxide intrinsic layer, carrying out patterning treatment, forming a field plate layer on the gallium oxide intrinsic layer by using a plasma enhanced chemical vapor deposition, magnetron sputtering or atomic layer deposition process, and stripping to obtain a field plate;
and coating a layer of photoresist on the front surface of the field plate, carrying out patterning treatment, depositing a metal layer and an inert chemical metal layer above the field plate and the gallium oxide intrinsic layer by using a metal coating technology, and stripping to obtain the Schottky electrode and the floating metal ring.
4. The method of claim 3,
the gallium oxide substrate is cleaned by using standard organic and inorganic cleaning processes, and the process conditions are as follows:
and (3) carrying out water bath at 200 ℃, and treating the gallium oxide matrix by using a piranha solution for 15 minutes.
5. The method of claim 3,
the thickness of the gallium oxide intrinsic layer is 20nm-10 μm; after the formation, the formed sample is respectively heated in water bath by using alcohol, acetone, isopropanol and deionized water, and is ultrasonically cleaned for 5min.
6. The method of claim 3,
the second ohmic contact metal layer is made of titanium and has the thickness of 2-200nm;
the first ohmic contact metal layer is made of inert metal with poor mutual diffusivity, the material of the first ohmic contact metal layer is gold, tungsten, iridium, platinum or palladium, and the thickness of the first ohmic contact metal layer is 20-400nm.
7. The method of claim 3, wherein the step of coating a photoresist on the front surface of the intrinsic gallium oxide layer and performing patterning treatment, the step of forming a field plate layer on the intrinsic gallium oxide layer by using a plasma enhanced chemical vapor deposition, magnetron sputtering or atomic layer deposition process, and the step of performing lift-off to obtain the field plate comprises:
coating a layer of photoresist on the gallium oxide intrinsic layer and carrying out patterning design to obtain a window for depositing the chemical inert medium layer; removing the photoresist on the surface of the sample and the chemical inert medium layer above the photoresist to obtain a field plate after the deposition of the chemical inert medium layer is finished,
wherein the chemical inert medium layer is made of SiO 2 、SiNx、Al 2 O 3 、ZrO 2 Or HfO 2 The thickness of the film is 2-200nm.
8. The method of claim 3, wherein the step of coating a photoresist on the front surface of the field plate and patterning the photoresist, depositing a metal layer and an inert chemical metal layer on the field plate and the intrinsic layer of gallium oxide by using a metal plating technique, and stripping the metal layer to obtain the Schottky electrode and the floating metal ring comprises:
spin-coating a layer of photoresist on the surfaces of the field plate and the gallium oxide intrinsic layer and patterning the photoresist to obtain windows for depositing a Ni metal layer and an inert metal layer;
depositing the Ni metal layer and the chemical inert metal layer on the surfaces of the gallium oxide intrinsic layer and the field plate structure in sequence, wherein the thickness of the Ni metal layer is 2-200nm; the chemical inert metal layer is made of gold, tungsten, iridium, platinum or palladium, and the thickness of the chemical inert metal layer is 20-400nm;
after deposition is finished, the sample is soaked in acetone to be stripped in a water bath at the temperature of 80 ℃, and photoresist on the surface of the sample and metal above the photoresist are removed to form a Schottky contact electrode and a metal ring.
9. The method of claim 3,
the second chemical inert metal layer is made of gold, tungsten, iridium, platinum or palladium, and the thickness of the second chemical inert metal layer is 20-400nm;
and removing the photoresist on the surface of the sample and the metal above the photoresist after the deposition is finished, and forming a Schottky contact electrode.
10. The method according to claim 7 or 9,
and removing the photoresist on the surface of the sample and the metal above the photoresist, and carrying out water bath stripping at 80 ℃ by soaking the sample in acetone.
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