CN115389083A - Wafer adsorption force measuring system and method, wafer tray and preparation method thereof - Google Patents
Wafer adsorption force measuring system and method, wafer tray and preparation method thereof Download PDFInfo
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- CN115389083A CN115389083A CN202210932954.0A CN202210932954A CN115389083A CN 115389083 A CN115389083 A CN 115389083A CN 202210932954 A CN202210932954 A CN 202210932954A CN 115389083 A CN115389083 A CN 115389083A
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000001179 sorption measurement Methods 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 238000012545 processing Methods 0.000 claims abstract description 30
- 238000005259 measurement Methods 0.000 claims abstract description 17
- 239000011241 protective layer Substances 0.000 claims abstract description 15
- 238000003860 storage Methods 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 239000000565 sealant Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 14
- 238000009826 distribution Methods 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000005491 wire drawing Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
- G01L5/16—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to a measuring system and a measuring method for wafer adsorption force, a computer readable storage medium, a wafer tray and a preparation method thereof. The measuring system comprises a plurality of sensors, a plurality of wires, a protective layer and a data processing module. The plurality of sensors are distributed at a plurality of positions on the wafer tray. The plurality of wires are respectively connected with the plurality of sensors in a plurality of directions. The protective layer covers the plurality of sensors and the plurality of wires. The data processing module is connected with the plurality of wires to respectively acquire the sensor superposed signals in the plurality of directions and determine the wafer adsorption force of each position according to the sensor superposed signals in each direction. By adopting the configuration, the invention can reliably measure the magnitude and the distribution uniformity of the adsorption force of a plurality of positions on the wafer tray at low cost and high temperature resistance, thereby meeting the measurement requirement of the adsorption force of the wafer under various process conditions.
Description
Technical Field
The invention relates to the technical field of semiconductor device manufacturing, in particular to a wafer adsorption force measuring system, a wafer adsorption force measuring method, a computer readable storage medium, a wafer tray and a wafer tray preparation method.
Background
The magnitude and uniformity of the Electrostatic chuck (ESC) attraction has a great influence on the heat transfer effect between the wafer (wafer) and the ESC, and directly affects the film formation quality on the wafer surface. Specifically, if the chucking force (chucking force) for chucking the wafer is too small, the wafer may move during the production of the thin film. On the other hand, if the suction force for sucking the wafer is too large, the wafer and the surface of the electrostatic chuck may be damaged. In addition, if the suction force of the electrostatic chuck is not completely removed when de-chucking is performed, a phenomenon of chipping is easily generated when the thin film preparation is completed and the wafer is lifted up.
In order to measure the adsorption force at multiple positions on the electrostatic chuck, some prior arts exist in the art, in which a pressure film sensor array is integrated on the surface of the electrostatic chuck, and then the adsorption force at multiple positions on the surface of the electrostatic chuck is measured in a manner that a wireless communication module transmits pressure signals at the respective positions. However, such a measurement method based on the wireless transmission technology requires integrating a wireless transmission module on the surface of the electrostatic chuck, which has the defects of High manufacturing difficulty and High cost, and is easily interfered by a High Density Plasma (HDP) and has the defect of poor communication reliability. In addition, in the process of a strong plasma field (HDP) process, the surface temperature of the electrostatic chuck is very high, so that the working life of the wireless transmission module is greatly influenced. Therefore, the measurement scheme based on the wireless transmission technology is difficult to carry out the adsorption force measurement in a strong plasma field (HDP) process efficiently and reliably.
In order to overcome the above-mentioned defects in the prior art, there is a need in the art for a wafer adsorption force measurement technique for measuring the adsorption force and distribution uniformity at multiple positions on a wafer tray at low cost, reliably and high temperature, so as to meet the wafer adsorption force measurement requirements under various process conditions.
Disclosure of Invention
The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.
In order to overcome the defects in the prior art, the invention provides a wafer adsorption force measuring system, a wafer adsorption force measuring method, a computer readable storage medium, a wafer tray and a wafer tray preparation method, which can reliably measure the adsorption force and distribution uniformity of a plurality of positions on the wafer tray at low cost and high temperature resistance, thereby meeting the wafer adsorption force measuring requirements under various process conditions.
Specifically, the system for measuring wafer suction force provided by the first aspect of the present invention includes a plurality of sensors, a plurality of wires, a protection layer, and a data processing module. The plurality of sensors are distributed at a plurality of positions on the wafer tray. The plurality of wires are respectively connected with the plurality of sensors in a plurality of directions. The protective layer covers the plurality of sensors and the plurality of wires. The data processing module is connected with the plurality of wires to respectively acquire the sensor superposed signals in the plurality of directions and determine the wafer adsorption force of each position according to the sensor superposed signals in each direction.
Further, in some embodiments of the present invention, the plurality of directions include a first direction and a second direction perpendicular to each other. The plurality of sensors are arranged along the first direction and the second direction, respectively, so as to form a two-dimensional sensor array on the wafer tray. The plurality of first wires are respectively connected with the plurality of sensors along the first direction so as to respectively collect a plurality of groups of first superposed signals along the first direction. And the plurality of second wires are respectively connected with the plurality of sensors along the second direction so as to respectively collect a plurality of groups of second superposed signals along the second direction.
Further, in some embodiments of the invention, the data processing module is configured to: analyzing each group of the first superposed signals and each group of the second superposed signals to determine sensor signals of each sensor; and respectively determining the wafer adsorption force of the position of each corresponding sensor according to the sensor signals.
Further, in some embodiments of the present invention, the wafer tray is provided with a wire lead-out hole. The plurality of wires penetrate through the wafer tray through the wire leading-out holes and are connected with the data processing module, and the wire leading-out holes are sealed by high-temperature sealant.
Further, in some embodiments of the present invention, the wafer tray is an electrostatic chuck. The wafer adsorption force is the electrostatic adsorption force of the electrostatic chuck on the wafer. In addition, the wafer tray is made of an aluminum substrate on which a ceramic insulating layer is coated. The plurality of sensors are distributed at the plurality of positions on the wafer tray via the ceramic insulating layer. Furthermore, the sensor is a pressure sensor. And the pressure sensor outputs a voltage signal and/or a current signal with corresponding amplitude according to the wafer adsorption force at the position. In addition, the protection layer is formed by an alumina ceramic material and is used for carrying out rigidity protection and high-temperature protection on the plurality of sensors and the plurality of wires below the protection layer.
In addition, the method for measuring the wafer adsorption force provided by the second aspect of the present invention includes the following steps: providing bias voltages to a plurality of sensors of the wafer chucking force measurement system provided by the first aspect of the present invention; acquiring a plurality of sensor superposition signals in corresponding directions through a plurality of wires of the measuring system; and determining the wafer adsorption force of the position of each sensor according to the sensor superposition signals in each direction.
Further, the above computer-readable storage medium according to a third aspect of the present invention is provided, having computer instructions stored thereon. When executed by a processor, the computer instructions implement the method for measuring wafer chucking force according to the second aspect of the present invention.
Further, according to the wafer tray provided by the fourth aspect of the present invention, the wafer suction force measuring system provided by the first aspect of the present invention is provided.
In addition, the method for manufacturing the wafer tray provided by the fifth aspect of the present invention includes the following steps: generating a plurality of sensors at a plurality of locations on a wafer tray; a plurality of wires are respectively connected with the plurality of sensors in a plurality of directions; connecting the plurality of wires to a data processing module; and covering a protective layer on the plurality of sensors and the plurality of wires.
Further, in some embodiments of the present invention, the step of generating a plurality of sensors at a plurality of locations on the wafer tray comprises: spraying a ceramic insulating layer on the wafer tray; and processing the plurality of sensors at the plurality of positions on the ceramic insulating layer by micromachining technology.
Further, in some embodiments of the present invention, the plurality of sensors are respectively arranged along a first direction and a second direction perpendicular to each other to form a two-dimensional sensor array on the wafer tray. The step of connecting the plurality of sensors with the plurality of wires in a plurality of directions, respectively, includes: connecting the sensors along the first direction by a plurality of first wires respectively so as to acquire a plurality of groups of first superposed signals along the first direction respectively; and connecting the plurality of sensors with a plurality of second wires respectively along the second direction to respectively acquire a plurality of groups of second superposed signals along the second direction.
Further, in some embodiments of the invention, the step of connecting the plurality of wires to a data processing module comprises: a lead leading-out hole is formed in the wafer tray; the plurality of wires penetrate through the wafer tray through the wire leading-out holes and are connected to the data processing module; and sealing the lead leading-out hole by using high-temperature sealant.
Further, in some embodiments of the present invention, the step of covering the plurality of sensors and the plurality of wires with a protective layer comprises: and spraying alumina ceramic on the plurality of sensors and the plurality of wires until reaching the required height and/or shape of the protective layer.
Drawings
The above features and advantages of the present disclosure will be better understood upon reading the detailed description of embodiments of the disclosure in conjunction with the following drawings. In the drawings, components are not necessarily drawn to scale, and components having similar relative characteristics or features may have the same or similar reference numerals.
Fig. 1 illustrates a flow diagram of a method for manufacturing a wafer tray provided in accordance with some embodiments of the present invention.
FIG. 2 illustrates a schematic diagram of a sensor array provided in accordance with some embodiments of the present invention.
Fig. 3 is a schematic diagram illustrating an architecture of a wafer chucking force measurement system according to some embodiments of the present invention.
Fig. 4 is a flow chart illustrating a method for measuring wafer chucking force according to some embodiments of the present invention.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure. While the invention will be described in connection with the preferred embodiments, there is no intent to limit its features to those embodiments. On the contrary, the invention has been described in connection with the embodiments for the purpose of covering alternatives or modifications as may be extended based on the claims of the invention. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The invention may be practiced without these particulars. Moreover, some of the specific details have been left out of the description in order to avoid obscuring or obscuring the focus of the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Additionally, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," "vertical" and the like as used in the following description are to be understood as referring to the segment and the associated drawings in the illustrated orientation. The relative terms are used for convenience of description only and do not imply that the described apparatus should be constructed or operated in a particular orientation and therefore should not be construed as limiting the invention.
It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, regions, layers and/or sections, these elements, regions, layers and/or sections should not be limited by these terms, but rather are used to distinguish one element, region, layer and/or section from another element, region, layer and/or section. Thus, a first component, region, layer or section discussed below could be termed a second component, region, layer or section without departing from some embodiments of the present invention.
As described above, in order to measure the suction force at a plurality of positions on the electrostatic chuck, there are some prior arts in the art, which measure the suction force at a plurality of positions on the surface of the electrostatic chuck by integrating the pressure film sensor array on the surface of the electrostatic chuck and then respectively transmitting the pressure signals at the positions through the wireless communication module. However, such a measurement method based on the wireless transmission technology requires integrating a wireless transmission module on the surface of the electrostatic chuck, which has the defects of High manufacturing difficulty and High cost, and is easily interfered by a High Density Plasma (HDP) and has the defect of poor communication reliability. In addition, in the process of a strong plasma field (HDP) process, the surface temperature of the electrostatic chuck is very high, so that the working life of the wireless transmission module is greatly influenced. Therefore, the measurement scheme based on the wireless transmission technology is difficult to carry out the adsorption force measurement in a strong plasma field (HDP) process efficiently and reliably.
In order to overcome the defects in the prior art, the invention provides a wafer adsorption force measuring system, a wafer adsorption force measuring method, a computer readable storage medium, a wafer tray and a wafer tray preparation method, which can reliably measure the adsorption force and distribution uniformity of a plurality of positions on the wafer tray at low cost and high temperature resistance, thereby meeting the wafer adsorption force measuring requirements under various process conditions.
In some non-limiting embodiments, the method for measuring the wafer suction force provided by the second aspect of the present invention may be implemented by the system for measuring the wafer suction force provided by the first aspect of the present invention. The data processing module of the measuring system can be provided with a memory and a processor. The memory includes, but is not limited to, the above-described computer-readable storage medium provided by the third aspect of the invention having computer instructions stored thereon. The processor is connected to the memory and configured to execute the computer instructions stored in the memory to implement the method for measuring wafer chucking force according to the second aspect of the present invention.
In addition, in some embodiments, the wafer suction force measuring system provided in the first aspect of the present invention may be configured in the wafer tray provided in the fourth aspect of the present invention. The wafer tray can be prepared by the preparation method of the wafer tray provided by the fifth aspect of the invention.
The structure of the wafer tray and the wafer suction force measuring system will be described first with reference to some embodiments of the wafer tray manufacturing method. It will be appreciated by those skilled in the art that these examples of fabrication methods are merely non-limiting examples of implementations provided herein to clearly illustrate the broad concepts of the invention and to provide specific details that are convenient for the public to implement and are not intended to limit the overall structure or overall functionality of the wafer pallet and metrology system. Similarly, the wafer pallet and the measurement system are merely non-limiting embodiments of the present invention, and do not limit the operation targets of the steps of the manufacturing methods.
Please refer to fig. 1 to fig. 3 in combination. Fig. 1 illustrates a flow diagram of a method for preparing a wafer tray provided in accordance with some embodiments of the present invention. FIG. 2 illustrates a schematic diagram of a sensor array provided in accordance with some embodiments of the present invention. Fig. 3 is a schematic diagram illustrating an architecture of a wafer chucking force measurement system according to some embodiments of the present invention.
As shown in fig. 1 to 3, in the process of preparing a wafer tray, a technician may first generate a plurality of sensors 11 at a plurality of positions on the wafer tray 10.
In some embodiments, the wafer tray 10 may be an electrostatic chuck, and the attraction force to the wafer may be an electrostatic attraction force. In addition, the wafer tray 10 may be made of an aluminum substrate 101. In creating the plurality of sensors 11, a technician may first coat the aluminum substrate 101 of the wafer tray 10 with a silicon carbide (SiC) ceramic insulating layer 102, and then process the plurality of sensors 11 on the SiC ceramic insulating layer 102 at a plurality of locations, step by step, and/or simultaneously by micromachining techniques. Here, the sensor 11 may be a pressure sensor, and is capable of outputting a voltage signal and/or a current signal with corresponding amplitude according to a pressure received by a position (i.e. a force generated by a wafer to a corresponding position of the wafer tray 10 under the action of a wafer suction force)
As shown in fig. 1, after a plurality of sensors 11 are generated, a technician may connect the plurality of sensors 11 with a plurality of wires 121, 122, respectively, in a plurality of directions.
Specifically, as shown in fig. 2, the plurality of sensors 11 may be arranged in the X direction and the Y direction perpendicular to each other, respectively, to form a two-dimensional sensor array on the wafer tray 10. Correspondingly, a technician may use a welding or bonding method to connect the rows of sensors 11 to the lead plate of the pressure sensor array by using a plurality of first wires 121, respectively, so as to collect a plurality of sets of first superimposed signals along the X direction, respectively. In addition, the technician may also use a welding or bonding method to connect the rows of sensors 11 to the lead plate of the pressure sensor array by using a plurality of second wires 122, respectively, so as to collect a plurality of sets of second superimposed signals along the Y direction, respectively.
After the plurality of sensors 11 are created and connected, a technician may connect the plurality of wires 121, 122 to a data processing module, as shown in fig. 1.
Specifically, as shown in fig. 3, in the process of connecting the data processing module 20, a technician may first open a wire drawing hole 103 on the wafer tray 10, and pass a plurality of wires 121 and 122 through the wafer tray 10 via the wire drawing hole 103 and connect to the data processing module 20. Thereafter, the technician may also preferably seal the wire lead-out hole 103 using a high-temperature sealant to prevent leakage of the reaction gas, plasma, and external impurities from entering the inside of the reaction chamber through the wire lead-out hole 103.
After connecting the plurality of wires 121, 122 to the data processing module 20, a technician may cover the plurality of sensors 11 and the plurality of wires 121, 122 with a protective layer 104 to protect them, as shown in fig. 1.
Specifically, in some embodiments, the protective layer 104 may be formed from an alumina ceramic material. A technician may spray alumina ceramic on the sensors 11 and the wires 121 and 122 until reaching a desired height and/or shape of the protective layer 104 to provide rigidity protection and high temperature protection for the sensors 11 and the wires 121 and 122 therebelow.
Further, in some embodiments of the present invention, the data processing module 20 may be connected to an external computer 30. A technician may send an instruction to start measurement to the data processing module 20 via the computer 30, and the data processing module 20 may obtain sensor superposition signals in multiple directions and determine the wafer suction force at each position according to the sensor superposition signals in each direction. Then, a technician can obtain or continuously monitor the wafer suction force and distribution uniformity at a plurality of positions on the wafer tray 10 from the data processing module 20.
Referring to fig. 3 and 4, fig. 4 is a flowchart illustrating a method for measuring wafer chucking force according to some embodiments of the present invention.
As shown in fig. 3 and 4, in the process of measuring the wafer attraction force, the data processing module 20 may first provide the same bias voltage to the plurality of sensors 11 distributed at a plurality of positions on the wafer tray 10 through the plurality of wires 121 and 122. Then, in response to the suction force provided by the wafer tray 10 to the wafer, the one or more sensors 11 at the corresponding positions will change their output signals (e.g., output voltages) due to the change in the pressure applied thereto. At this time, the data processing module 20 may obtain multiple sets of sensor superimposed signals in the X direction and the Y direction through the multiple wires 121 and 122 of the measurement system, respectively, determine the X coordinate of the stressed position where the pressure changes according to the at least one first wire 121 where the output amplitude changes, and determine the Y coordinate of the stressed position where the pressure changes according to the at least one second wire 122 where the output amplitude changes, thereby determining the coordinate position of the one or more stressed positions on the wafer tray 10.
Further, the data processing module 20 may further determine the wafer adsorption force of each stressed position according to the amplitude variation of each group of the first superimposed signals on each first wire 121 and the amplitude variation of each group of the second superimposed signals on each second wire 122, where a corresponding relationship between the amplitude variation of each sensor superimposed signal and the wafer adsorption force value may be determined by a person skilled in the art through numerical value conversion or a limited calibration experiment, which is not described herein again.
In summary, silicon carbide (SiC) is used as a substrate of the pressure sensor array, the pressure sensor array is integrated in the electrostatic chuck by using a micro-manufacturing technology, and a sensor superposition signal indicating the wafer adsorption force is acquired by using a wire connection communication mode.
While, for purposes of simplicity of explanation, the methodologies are shown and described as a series of acts, it is to be understood and appreciated that the methodologies are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and/or concurrently with other acts from that shown and described herein or not shown and described herein, as would be understood by one skilled in the art.
The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (13)
1. A wafer chucking force measurement system, comprising:
the sensors are distributed at a plurality of positions on the wafer tray;
a plurality of wires connected to the plurality of sensors in a plurality of directions, respectively;
a protective layer covering the plurality of sensors and the plurality of wires; and
and the data processing module is connected with the plurality of wires to respectively acquire the sensor superposed signals in the plurality of directions and determine the wafer adsorption force of each position according to the sensor superposed signals in each direction.
2. The measurement system of claim 1, wherein the plurality of directions include a first direction and a second direction that are perpendicular to each other, wherein,
the plurality of sensors are arranged along the first direction and the second direction respectively to form a two-dimensional sensor array on the wafer tray,
the plurality of first leads are respectively connected with the plurality of sensors along the first direction so as to respectively collect a plurality of groups of first superposed signals along the first direction,
and the plurality of second wires are respectively connected with the plurality of sensors along the second direction so as to respectively collect a plurality of groups of second superposed signals along the second direction.
3. The measurement system of claim 2, wherein the data processing module is configured to:
analyzing each group of the first superposed signals and each group of the second superposed signals to determine sensor signals of each sensor; and
and respectively determining the wafer adsorption force of the position of each corresponding sensor according to the sensor signals.
4. The measurement system of claim 1, wherein the wafer tray is provided with wire outlet holes, wherein the wires pass through the wafer tray via the wire outlet holes and are connected to the data processing module, and the wire outlet holes are sealed by a high temperature sealant.
5. The measurement system of claim 1, wherein the wafer pallet is an electrostatic chuck, the wafer chucking force is an electrostatic chucking force of the electrostatic chuck on the wafer, and/or
The wafer tray is made of aluminum substrate, a ceramic insulating layer is coated on the wafer tray, and the sensors are distributed at the positions on the wafer tray through the ceramic insulating layer
The sensor is a pressure sensor, and the pressure sensor outputs a voltage signal and/or a current signal with corresponding amplitude according to the wafer adsorption force at the position, and/or
The protective layer is made of alumina ceramic material and is used for carrying out rigidity protection and high-temperature protection on the sensors and the leads below the protective layer.
6. A method for measuring wafer adsorption force is characterized by comprising the following steps:
providing bias voltages to a plurality of sensors of a wafer chucking force measuring system according to any one of claims 1 to 5;
acquiring a plurality of sensor superposition signals in corresponding directions through a plurality of wires of the measuring system; and
and determining the wafer adsorption force of the position of each sensor according to the sensor superposed signals in each direction.
7. A computer readable storage medium having stored thereon computer instructions, which when executed by a processor, perform the method of measuring wafer chucking force of claim 6.
8. A wafer tray, characterized in that, a wafer adsorption force measuring system as claimed in any one of claims 1-5 is arranged in the wafer tray.
9. A preparation method of a wafer tray is characterized by comprising the following steps:
generating a plurality of sensors at a plurality of locations on a wafer tray;
a plurality of wires are respectively connected with the plurality of sensors in a plurality of directions;
connecting the plurality of wires to a data processing module; and
and covering a protective layer on the sensors and the leads.
10. The method of claim 9, wherein the step of generating a plurality of sensors at a plurality of locations on a wafer tray comprises:
spraying a ceramic insulating layer on the wafer tray; and
and processing the plurality of sensors at the plurality of positions on the ceramic insulating layer by using a micro-processing technology.
11. The method of claim 9, wherein the plurality of sensors are arranged in a first direction and a second direction perpendicular to each other, respectively, to form a two-dimensional sensor array on the wafer tray, and the step of connecting the plurality of sensors in the plurality of directions by a plurality of wires, respectively, comprises:
connecting the sensors along the first direction by a plurality of first wires respectively so as to acquire a plurality of groups of first superposed signals along the first direction respectively; and
and a plurality of second leads are respectively connected with the plurality of sensors along the second direction so as to respectively collect a plurality of groups of second superposed signals along the second direction.
12. The method of manufacturing of claim 11, wherein the step of connecting the plurality of wires to a data processing module comprises:
a lead leading-out hole is formed in the wafer tray;
the plurality of wires penetrate through the wafer tray through the wire leading-out holes and are connected to the data processing module; and
and sealing the lead leading-out hole by using high-temperature sealant.
13. The method of claim 9, wherein the step of covering the plurality of sensors and the plurality of wires with a protective layer comprises:
and spraying alumina ceramic on the plurality of sensors and the plurality of leads until reaching the required height and/or shape of the protective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210932954.0A CN115389083A (en) | 2022-08-04 | 2022-08-04 | Wafer adsorption force measuring system and method, wafer tray and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210932954.0A CN115389083A (en) | 2022-08-04 | 2022-08-04 | Wafer adsorption force measuring system and method, wafer tray and preparation method thereof |
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| CN115389083A true CN115389083A (en) | 2022-11-25 |
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| CN202210932954.0A Pending CN115389083A (en) | 2022-08-04 | 2022-08-04 | Wafer adsorption force measuring system and method, wafer tray and preparation method thereof |
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- 2022-08-04 CN CN202210932954.0A patent/CN115389083A/en active Pending
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