CN115386973A - Method for preparing side-by-side heterojunction nano fibers through single-source double-field electrostatic spinning - Google Patents
Method for preparing side-by-side heterojunction nano fibers through single-source double-field electrostatic spinning Download PDFInfo
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- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01D—MECHANICAL METHODS OR APPARATUS IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS
- D01D5/00—Formation of filaments, threads, or the like
- D01D5/0007—Electro-spinning
- D01D5/0015—Electro-spinning characterised by the initial state of the material
- D01D5/003—Electro-spinning characterised by the initial state of the material the material being a polymer solution or dispersion
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01D—MECHANICAL METHODS OR APPARATUS IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS
- D01D5/00—Formation of filaments, threads, or the like
- D01D5/0007—Electro-spinning
- D01D5/0061—Electro-spinning characterised by the electro-spinning apparatus
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- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
- D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
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- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04H—MAKING TEXTILE FABRICS, e.g. FROM FIBRES OR FILAMENTARY MATERIAL; FABRICS MADE BY SUCH PROCESSES OR APPARATUS, e.g. FELTS, NON-WOVEN FABRICS; COTTON-WOOL; WADDING ; NON-WOVEN FABRICS FROM STAPLE FIBRES, FILAMENTS OR YARNS, BONDED WITH AT LEAST ONE WEB-LIKE MATERIAL DURING THEIR CONSOLIDATION
- D04H1/00—Non-woven fabrics formed wholly or mainly of staple fibres or like relatively short fibres
- D04H1/40—Non-woven fabrics formed wholly or mainly of staple fibres or like relatively short fibres from fleeces or layers composed of fibres without existing or potential cohesive properties
- D04H1/42—Non-woven fabrics formed wholly or mainly of staple fibres or like relatively short fibres from fleeces or layers composed of fibres without existing or potential cohesive properties characterised by the use of certain kinds of fibres insofar as this use has no preponderant influence on the consolidation of the fleece
- D04H1/4209—Inorganic fibres
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- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04H—MAKING TEXTILE FABRICS, e.g. FROM FIBRES OR FILAMENTARY MATERIAL; FABRICS MADE BY SUCH PROCESSES OR APPARATUS, e.g. FELTS, NON-WOVEN FABRICS; COTTON-WOOL; WADDING ; NON-WOVEN FABRICS FROM STAPLE FIBRES, FILAMENTS OR YARNS, BONDED WITH AT LEAST ONE WEB-LIKE MATERIAL DURING THEIR CONSOLIDATION
- D04H1/00—Non-woven fabrics formed wholly or mainly of staple fibres or like relatively short fibres
- D04H1/70—Non-woven fabrics formed wholly or mainly of staple fibres or like relatively short fibres characterised by the method of forming fleeces or layers, e.g. reorientation of fibres
- D04H1/72—Non-woven fabrics formed wholly or mainly of staple fibres or like relatively short fibres characterised by the method of forming fleeces or layers, e.g. reorientation of fibres the fibres being randomly arranged
- D04H1/728—Non-woven fabrics formed wholly or mainly of staple fibres or like relatively short fibres characterised by the method of forming fleeces or layers, e.g. reorientation of fibres the fibres being randomly arranged by electro-spinning
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Abstract
The invention relates to a method for preparing side-by-side heterojunction nano-fibers by single-source double-field electrostatic spinning, which comprises the steps of firstly, respectively preparing a precursor solution I containing indium nitrate pentahydrate/polyvinylpyrrolidone and a precursor solution II containing stannous chloride dihydrate/polyvinylpyrrolidone; then respectively injecting the precursor solution I and the precursor solution II into a glass injector I and a glass injector II which are arranged in a single-source double-field electrostatic spinning device in parallel, and adjustingSpinning is carried out by the voltage of a direct-current high-voltage power supply, taylor cones ejected by a needle head I and a needle head II are entangled, and a nano-fiber membrane is obtained on a stainless steel collecting plate; finally, annealing the nanofiber membrane to obtain SnO 2 /In 2 O 3 Side-by-side heterojunction nanofiber materials. The method is convenient to operate, easy to popularize and apply in a large scale, stable in filament output state in the electrostatic spinning process, good in spinning effect and suitable for preparing the heterojunction nano-fiber of any combination of MOS materials such as NiO, znO and the like.
Description
Technical Field
The invention relates to the technical field of preparation of one-dimensional nano materials, in particular to a method for preparing side-by-side heterojunction nano fibers by single-source double-field electrostatic spinning.
Background
One-dimensional nanomaterials (nanofibers, nanobelts, nanotubes, nanorods, and various one-dimensional nanostructure arrays) have received much attention because of their advantages of large specific surface area, high crystallinity, low defect level, easy size control, and small size and surface effect. The Metal Oxide Semiconductor (MOS) material has the advantages of tunable band gap, easy preparation, low cost, easy doping and modification and the like. The one-dimensional nano MOS material has the advantages of the two, is widely applied to the research fields of gas sensors, photoelectric detectors, supercapacitors, ion batteries and the like, and meanwhile, the large specific surface area of the one-dimensional nano MOS material provides a large number of active sites for adsorption and reaction of target substances on the surface of the nano material, so that the adsorption and reaction efficiency is effectively improved. In addition, the non-woven two-dimensional sheet structure interwoven by the one-dimensional nano MOS material has certain mechanical flexibility and mechanical strength, and can be applied to flexible wearable electronic devices.
Although the one-dimensional nano MOS material has the advantages, in many application fields, due to the characteristics of the material, a single MOS material is difficult to simultaneously meet the requirements of various performance indexes, and certain defects exist in certain performances. Therefore, many researches adopt a strategy of compounding two MOS materials to form a heterostructure to make up for the performance defect and improve the comprehensive performance of the materials. The heterostructure can transfer electrons from a high energy state to an unoccupied low energy state, so that the electrons and holes are separated, the recombination of electron-hole pairs is effectively inhibited, and the service life of carriers is prolonged. Meanwhile, the combination of the two MOS materials with respective advantages can enable the composite material to have the advantages of the two MOS materials, so that the comprehensive performance of the device is effectively improved.
At present, the preparation method of the MOS-based heterojunction nanofiber material mainly comprises the following steps: preparing single MOS nano-fiber by adopting methods such as an electrostatic spinning method and a molecular technology preparation method, performing post-treatment on a prepared MOS nano-fiber precursor by adopting methods such as a hydrothermal method, a solvothermal method and a chemical vapor deposition method, and modifying the surface of the precursor fiber with another MOS material to prepare a heterostructure; preparing a precursor solution containing two or more precursor metal salts simultaneously, and preparing the heterojunction nano-fiber by adopting an electrostatic spinning method; thirdly, preparing precursor solutions of the two MOS materials respectively, and preparing the core-shell nanofiber with one material coated with the other material by adopting a coaxial electrostatic spinning method; preparing precursor solutions of the two MOS materials respectively, and preparing the side-by-side nanofibers by adopting a dual-power dual-electrode spinning technology. However, the above method still has the following problems: i) After the prepared nanofiber monofilament is subjected to post-treatment, only particles with small sizes and the like can be modified on the surface of the fiber, and a large-area heterostructure is difficult to form. The modification of particles with excessive density can lead to the fiber to be coated by the particles, thereby preventing the exposure of the fiber material, reducing the number of active sites and having negative influence on the improvement of the performance. ii) in the heterojunction material prepared by the electrostatic spinning method by using the spinning solution containing the precursor metal salts of different materials, the crystal grains of multiple MOS materials exist in a single nanofiber simultaneously. Different semiconductor materials form potential barriers at grain boundaries due to different energy level structures, so that energy bands of the semiconductor materials are bent, and transmission of electrons among different material grains is hindered. iii) Although the two materials are combined in a large area, the core-shell heterostructure prepared by the coaxial electrostatic spinning method is completely or mostly coated by the shell material, and the shell material blocks the exposure of the core material, so that active sites on the surface of the core material cannot be exposed to react with a target substance, thereby further improving the performance. iv) the dual-power dual-electrode spinning technology requires two power supply devices to work simultaneously, which increases the energy consumption in the preparation process.
Disclosure of Invention
The invention aims to solve the technical problem of providing a simple and large-scale method for preparing the parallel heterojunction nano-fiber by single-source double-field electrostatic spinning.
In order to solve the problems, the method for preparing the side-by-side heterojunction nano fiber by the single-source double-field electrostatic spinning is characterized by comprising the following steps: the method is that indium nitrate pentahydrate (InN) is prepared respectively 3 O 9 ·5H 2 Precursor solution I of O)/polyvinylpyrrolidone (PVP) and stannous chloride dihydrate (SnCl) 2 ·2H 2 O)/precursor solution II of polyvinylpyrrolidone (PVP); then respectively injecting the precursor solution I and the precursor solution II into a glass injector I and a glass injector II which are arranged in a single-source double-field electrostatic spinning device in parallel, adjusting the voltage of a direct-current high-voltage power supply to carry out spinning, and enabling Taylor cones jetted by a needle head I and a needle head II to be entangled together to obtain a nanofiber membrane on a stainless steel collecting plate; finally, annealing the nanofiber membrane to obtain SnO 2 /In 2 O 3 Side-by-side heterojunction nanofiber materials.
The weight average molecular weight of the polyvinylpyrrolidone is 1300000.
The precursor solution I is prepared by firstly adding 1.5 mmol (0.5864 g) of InN 3 O 9 ·5H 2 Dissolving O in 5 ml of absolute ethyl alcohol, and uniformly stirring to obtain a solution A; then 0.75 g of PVP powder is dissolved in 5 ml of N, N-dimethylformamide solution, and the obtained solution B is stirred uniformly; finally, the solution A is mixed with the solutionAnd mixing the solution B and stirring for 12 h to obtain the product.
The precursor solution II is prepared by firstly adding 0.15 mmol (0.0338 g) of SnCl 2 ·2H 2 Dissolving O in 5 ml of absolute ethyl alcohol, and uniformly stirring to obtain a solution C; then dissolving 0.75 g PVP powder in 5 ml N, N-dimethylformamide solution, and uniformly stirring to obtain solution D; and finally, mixing the solution C and the solution D and stirring for 12 hours to obtain the compound.
The single-source double-field electrostatic spinning device comprises a direct-current high-voltage power supply, a stainless steel collecting plate and two iron stand platforms; the two iron stand tables are oppositely arranged, a glass injector I with a needle head I is fixed on one of the iron stand tables, and a glass injector II with a needle head II is fixed on the other iron stand table; the needle I is connected with the positive electrode of the direct-current high-voltage power supply through a lead I; the needle head II is grounded through a lead III; and the stainless steel collecting plate is arranged between the two iron stand platforms and is connected with the negative electrode of the direct-current high-voltage power supply through a wire II.
The glass injector I and the glass injector II are both perpendicular to the stainless steel collecting plate.
The voltage of the direct-current high-voltage power supply is 8 to 14 kV.
The distance between the needle head I and the needle head II is 3-5 cm.
And the distance between the needle I and the needle II and the stainless steel collecting plate is 10 to 15 cm.
The annealing treatment condition is that a tube furnace is adopted to anneal in air atmosphere, the temperature is raised to 300 ℃, the temperature is kept for 60 min, the temperature is raised to 500 ℃, the temperature is kept for 120 min, and then the tube furnace is cooled to room temperature.
Compared with the prior art, the invention has the following advantages:
1. according to the invention, by utilizing the single-source double-field electrostatic spinning device and a direct-current high-voltage power supply, an electric field is respectively constructed between two needle heads and between the two needle heads and the collecting plate, so that two different MOS nano fibers are adsorbed together through electrostatic adsorption force under the combined action of double electric fields, a long-range large-area heterostructure is formed, and the positive effect of a heterojunction in the working process of a device is effectively exerted.
2. In the side-by-side heterostructure constructed by the invention, two MOS nanofibers are combined in a side-by-side form. Except for the bonding interface of the two materials, most surfaces of the two materials are exposed, so that more surface active sites can participate in the reaction. Meanwhile, the parallel heterostructure effectively avoids the loss of the number of active sites caused by mutually coating two different materials.
3. The single-source double-field electrostatic spinning device has the advantages of simple structure, convenient operation and easy large-scale popularization and application.
4. By adopting the method, the spinning state is stable in the electrostatic spinning process, and the spinning effect is good. Meanwhile, the side-by-side heterojunction material constructed by the invention does not simply mix the two materials together, but keeps the microstructure of the nanofiber for both the two materials, namely the advantage of the one-dimensional nanostructure of the two materials is kept. Meanwhile, in a single nanofiber, only crystal grains of a certain MOS material exist, potential barriers among different crystal grains are not formed, and the integrity of a carrier transmission channel is effectively guaranteed.
5. The invention utilizes a single-source double-field electrostatic spinning device to prepare SnO in one step 2 /In 2 O 3 The heterojunction nanofiber material is applicable to preparation of heterojunction nanofibers of any combination of MOS materials such as NiO and ZnO, and the method is simple and is suitable for mass production.
Drawings
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
FIG. 1 is a schematic view of a single source dual field electrospinning apparatus of the present invention.
In the figure: 1-a direct current high voltage power supply; 2-glass syringe I; 3-glass syringe II; 4, a needle head I; 5-needle II; 6-iron stand; 7-stainless steel collection plate; 8, a lead I; 9-conductor II; 10-conductor iii.
FIG. 2 shows a variant d of the present invention 1 Distance (distance between needle I and needle II)And different d 2 The direct current voltage value of the spinning can be stabilized under the distance (the distance between the needle head I and the stainless steel collecting plate).
FIG. 3 shows the present invention at d 2 D is different from 15 cm 1 The stable spinning state diagram of the needle head I and the needle head II is as follows: (a) 3 cm, (b) 4 cm and (c) 5 cm.
FIG. 4 shows the present invention at d 2 In the condition of = 15 cm, different d 1 SnO prepared by 2 /In 2 O 3 SEM pictures of side-by-side heterojunction nanofibers ((a) 3 cm, (b) 4 cm and (c) 5 cm) and indium oxide nanofibers (d).
FIG. 5 shows SnO prepared by the present invention 2 /In 2 O 3 XRD pattern of heterostructure nanofibers.
Detailed Description
A method for preparing side-by-side heterojunction nano fibers by single-source double-field electrostatic spinning comprises the following steps: the method is that indium nitrate pentahydrate (InN) is prepared respectively 3 O 9 ·5H 2 Precursor solution I of O)/polyvinylpyrrolidone (PVP) and stannous chloride dihydrate (SnCl) 2 ·2H 2 O)/precursor solution II of polyvinylpyrrolidone (PVP); then respectively injecting the precursor solution I and the precursor solution II into a glass injector I2 and a glass injector II 3 which are arranged in a single-source double-field electrostatic spinning device in parallel, adjusting the voltage of a direct-current high-voltage power supply 1 to be 8-14 kV for spinning, and enabling Taylor cones jetted by a needle head I4 and a needle head II 5 to be entangled together to obtain a nanofiber membrane on a stainless steel collecting plate 7; finally, annealing the nanofiber membrane in a tube furnace in the air atmosphere, heating to 300 ℃, preserving heat for 60 min, heating to 500 ℃, preserving heat for 120 min, and cooling to room temperature along with the furnace to obtain SnO 2 /In 2 O 3 Side-by-side heterojunction nanofiber materials.
Wherein: the weight average molecular weight of polyvinylpyrrolidone is 1300000.
The precursor solution I is prepared by firstly adding 1.5 mmol (0.5864 g) of InN 3 O 9 ·5H 2 Dissolving O in 5 ml of absolute ethyl alcohol, and uniformly stirring to obtain a solution A; then theDissolving 0.75 g PVP powder in 5 ml N, N-dimethylformamide solution, and uniformly stirring to obtain solution B; and finally, mixing the solution A and the solution B, and stirring for 12 hours to obtain a colorless and transparent clear solution.
The precursor solution II is prepared by first 0.15 mmol (0.0338 g) of SnCl 2 ·2H 2 Dissolving O in 5 ml of absolute ethyl alcohol, and uniformly stirring to obtain a solution C; then dissolving 0.75 g PVP powder in 5 ml N, N-dimethylformamide solution, and uniformly stirring to obtain solution D; and finally, mixing the solution C and the solution D, and stirring for 12 hours to obtain a colorless and transparent clear solution.
As shown in fig. 1, the single-source double-field electrospinning device includes a dc high-voltage power supply 1, a stainless steel collecting plate 7, and two iron stand plates 6. The two iron stand tables 6 are oppositely arranged, a glass injector I2 with a needle head I4 is fixed on one iron stand table 6, and a glass injector II 3 with a needle head II 5 is fixed on the other iron stand table 6; the needle I4 is connected with the anode of the direct-current high-voltage power supply 1 through a lead I8; the needle head II 5 is grounded through a lead III 10; a stainless steel collecting plate 7 is arranged between the two iron stand platforms 6, and the stainless steel collecting plate 7 is connected with the negative electrode of the direct-current high-voltage power supply 1 through a lead II 9. Glass syringe I2 and glass syringe II 3 are all perpendicular to stainless steel collection plate 7. The distance between the needle I4 and the needle II 5 is 3-5 cm; the distance between the needle I4 and the needle II 5 and the stainless steel collecting plate 7 is 10 to 15 cm.
[ WORKING PROCEDURE ] A single DC high voltage power supply 1 is used to respectively construct two electric fields between a needle I4 and a stainless steel collecting plate 7 and between the needle I4 and a needle II 5. The stainless steel collecting plate 7 is connected with the cathode of the power supply and is arranged right below the middle of the needle head I4 and the needle head II 5. After the circuit is connected, under the action of double electric fields, the needle head I4 and the needle head II 5 can perform spinning simultaneously, and the two kinds of sprayed nanofiber filaments are adsorbed together due to the electrostatic action to form heterojunction nanofiber which is arranged side by side in a side-by-side mode and are deposited on the stainless steel collecting plate 7 together under the action of gravity and an electric field. The method constructs a long-range large-area heterostructure, the two materials are not mutually coated, the micro-morphology of the one-dimensional nano material is kept, and the integrity of the conductive channel is kept.
Example 1 a method for preparing side-by-side heterojunction nanofibers by single source double field electrospinning:
and injecting the precursor solution I into a glass injector I2 in the single-source double-field electrostatic spinning device, and injecting the precursor solution II into a glass injector II 3 of the device. The needle I4 is connected with the positive electrode of the direct-current high-voltage power supply 1 through a lead I8; carrying out grounding treatment on the needle head II 5 through a lead III 10; the stainless steel collecting plate 7 is connected with the negative electrode of the direct-current high-voltage power supply 1 through a lead II 9.
D is adjusted within the range of 3 to 5 cm 1 D is adjusted within the range of 10 to 15 cm 2 And adjusting the voltage value of the direct-current high-voltage power supply 1 to ensure that the needle I4 and the needle II 5 of the spinning device both have filaments to be sprayed out and reach a stable spinning state (figure 2). Meanwhile, taylor cones jetted by the two needle heads are entangled together under the action of an electric field between the two needle heads in the spinning device, and the positively charged InN-containing fibers are positively charged 3 O 9 ·5H 2 SnCl-containing nano fiber with induced negative charges generated on surface 2 ·2H 2 The nanofibers of O attract each other, forming a side-by-side heterostructure material (fig. 3). At a determined d 1 And d 2 At values below or above the steady spinning voltage, it is difficult to achieve a steady taylor cone entangled state. The material falls onto the stainless steel collection plate 7 under the action of the electric field between the needle and the stainless steel collection plate 7 and gravity to obtain the nanofiber membrane.
The obtained nanofiber membrane was removed with tweezers and annealed in a tube furnace. The annealing temperature-raising program comprises: the heating rate is 2 ℃ for min -1 Heating to 300 deg.C, maintaining the temperature for 60 min, and then maintaining at 2 deg.C for another min -1 The temperature rise rate is increased to 500 ℃, the temperature is preserved for 120 min and then the furnace is cooled to room temperature, thus obtaining SnO 2 /In 2 O 3 Heterojunction nanofibers (figure 4).
Since the atomic ratio of In to Sn In the precursor solution I and the precursor solution II is 10: 1, the obtained SnO 2 The diameter of the nano-fiber is smaller than that of In 2 O 3 The diameter of the nanofiber. SnO 2 The nano-fiber is entangled In 2 O 3 SnO is formed on the nano-fiber 2 /In 2 O 3 Heterostructure (fig. 4).
Claims (10)
1. A method for preparing side-by-side heterojunction nano fibers by single-source double-field electrostatic spinning is characterized by comprising the following steps: firstly, respectively preparing a precursor solution I containing indium nitrate pentahydrate/polyvinylpyrrolidone and a precursor solution II containing stannous chloride dihydrate/polyvinylpyrrolidone; then respectively injecting the precursor solution I and the precursor solution II into a glass injector I (2) and a glass injector II (3) which are arranged in a single-source double-field electrostatic spinning device in parallel, adjusting the voltage of a direct-current high-voltage power supply (1) to carry out spinning, and enabling Taylor cones ejected by a needle head I (4) and a needle head II (5) to be entangled together, thereby obtaining a nanofiber membrane on a stainless steel collecting plate (7); finally, annealing the nanofiber membrane to obtain SnO 2 /In 2 O 3 Side-by-side heterojunction nanofiber materials.
2. The method for preparing the side-by-side heterojunction nanofibers by single-source double-field electrospinning according to claim 1, wherein: the weight average molecular weight of the polyvinylpyrrolidone is 1300000.
3. The method for preparing the side-by-side heterojunction nanofiber according to the claim 1 or 2, wherein the method comprises the following steps: the precursor solution I is a solution A obtained by dissolving 1.5 mmol of indium nitrate pentahydrate in 5 ml of absolute ethanol and uniformly stirring; then 0.75 g of polyvinylpyrrolidone powder is dissolved in 5 ml of N, N-dimethylformamide solution, and the obtained solution B is uniformly stirred; and finally, mixing the solution A and the solution B, and stirring for 12 hours to obtain the compound.
4. The method for preparing the side-by-side heterojunction nanofiber according to the claim 1 or 2, wherein the method comprises the following steps: the precursor solution II is a solution C obtained by firstly dissolving 0.15 mmol of stannous chloride dihydrate in 5 ml of absolute ethyl alcohol and uniformly stirring; then 0.75 g of polyvinylpyrrolidone powder is dissolved in 5 ml of N, N-dimethylformamide solution, and the obtained solution D is uniformly stirred; and finally, mixing the solution C and the solution D and stirring for 12 hours to obtain the compound.
5. The method for preparing the side-by-side heterojunction nanofibers by single-source double-field electrospinning according to claim 1, wherein: the single-source double-field electrostatic spinning device comprises a direct-current high-voltage power supply (1), a stainless steel collecting plate (7) and two iron stand tables (6); the two iron stand platforms (6) are oppositely arranged, one of the iron stand platforms (6) is fixed with a glass injector I (2) with a needle head I (4), and the other iron stand platform (6) is fixed with a glass injector II (3) with a needle head II (5); the needle head I (4) is connected with the positive electrode of the direct-current high-voltage power supply (1) through a lead I (8); the needle head II (5) is grounded through a lead III (10); and a stainless steel collecting plate (7) is arranged between the two iron stand platforms (6), and the stainless steel collecting plate (7) is connected with the negative electrode of the direct-current high-voltage power supply (1) through a lead II (9).
6. The method for preparing the side-by-side heterojunction nanofiber according to claim 5, wherein the method comprises the following steps: the glass injector I (2) and the glass injector II (3) are perpendicular to the stainless steel collecting plate (7).
7. The method for preparing the side-by-side heterojunction nanofiber according to claim 1, wherein the method comprises the following steps: the voltage of the direct-current high-voltage power supply (1) is 8 to 14 kV.
8. The method for preparing the side-by-side heterojunction nanofiber according to the claim 1 or 5, wherein: the distance between the needle head I (4) and the needle head II (5) is 3-5 cm.
9. The method for preparing the side-by-side heterojunction nanofiber according to the claim 1 or 5, wherein: the distance between the needle head I (4) and the needle head II (5) and the stainless steel collecting plate (7) is 10 to 15 cm.
10. The method for preparing the side-by-side heterojunction nanofibers by single-source double-field electrospinning according to claim 1, wherein: the annealing treatment condition is that a tube furnace is adopted to anneal in the air atmosphere, the temperature is raised to 300 ℃, the temperature is maintained for 60 min, the temperature is raised to 500 ℃, the temperature is maintained for 120 min, and then the tube furnace is cooled to the room temperature.
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| CN116377606A (en) * | 2023-04-25 | 2023-07-04 | 武汉纺织大学 | Spiral antibacterial nanofiber as well as preparation method and application thereof |
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