CN115386377A - Phosphoric acid etching solution, preparation method and application - Google Patents
Phosphoric acid etching solution, preparation method and application Download PDFInfo
- Publication number
- CN115386377A CN115386377A CN202211105892.2A CN202211105892A CN115386377A CN 115386377 A CN115386377 A CN 115386377A CN 202211105892 A CN202211105892 A CN 202211105892A CN 115386377 A CN115386377 A CN 115386377A
- Authority
- CN
- China
- Prior art keywords
- phosphoric acid
- etching solution
- acid etching
- compound
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 title claims abstract description 142
- 229910000147 aluminium phosphate Inorganic materials 0.000 title claims abstract description 71
- 238000005530 etching Methods 0.000 title claims abstract description 71
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims description 35
- 229910006367 Si—P Inorganic materials 0.000 claims description 33
- 238000006243 chemical reaction Methods 0.000 claims description 31
- 238000003756 stirring Methods 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 229920001709 polysilazane Polymers 0.000 claims description 11
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 239000002210 silicon-based material Substances 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 6
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 3
- RSKGMYDENCAJEN-UHFFFAOYSA-N hexadecyl(trimethoxy)silane Chemical compound CCCCCCCCCCCCCCCC[Si](OC)(OC)OC RSKGMYDENCAJEN-UHFFFAOYSA-N 0.000 claims description 3
- 239000005049 silicon tetrachloride Substances 0.000 claims description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 2
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 claims description 2
- 238000004321 preservation Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 3
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 1
- 230000008929 regeneration Effects 0.000 abstract description 4
- 238000011069 regeneration method Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 43
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 239000012295 chemical reaction liquid Substances 0.000 description 10
- 238000001035 drying Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 239000002274 desiccant Substances 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
The invention provides a phosphoric acid etching solution, a preparation method and application thereof. The phosphoric acid etching solution of the invention is SiN/SiO 2 When the selectivity is more than 500, siO 2 The film layer is not affected by the etching liquid, siO 2 No regeneration and good etching effect.
Description
Technical Field
The invention relates to the technical field of etching solutions, in particular to a phosphoric acid etching solution, and a preparation method and application thereof.
Background
Phosphoric acid is commonly used as an etching solution for etching SiN in the semiconductor industry, and the SiN/SiO etching solution is prepared by pure phosphoric acid 2 The selectivity ratio is generally about 50, and the semiconductor structure is SiN and SiO 2 Alternately stacked layers, siO is ensured 2 The film layer is basically not influenced by etching liquid, siN/SiO 2 The larger the selection ratio, the better. If the concentration of Si in the solution is too high at the present stage, siO is caused 2 Film regeneration occurs, so SiO 2 The lack of regeneration is critical to the performance of the memory chip.
The prior patent CN110804441A discloses a phosphoric acid etching solution for inhibiting silicon dioxide etching, which comprises phosphoric acid, silicide and additives, and is applicable to SiN and SiO 2 When the film layers are alternately stacked, the selection is small, and SiO is adopted 2 The film layer of (2) is susceptible to etching, siO 2 The film is regenerated.
Disclosure of Invention
In view of the above, the present invention provides a SiN/SiO 2 Large selectivity ratio, siO 2 Phosphoric acid etching solution which can not regenerate the film.
The technical scheme of the invention is realized as follows: in a first aspect, the present invention provides a phosphoric acid etching solution, which comprises phosphoric acid and a Si-P compound, wherein the structural formula of the Si-P compound is:
wherein R is CH 3 (CH2) n Or
n is an integer between 1 and 5.
On the basis of the technical scheme, preferably, the phosphoric acid etching solution comprises 90-97% of phosphoric acid with the concentration of 85% and 3-10% of Si-P compound according to the mass percentage of 100%.
On the basis of the above technical scheme, preferably, the preparation method of the Si-P compound comprises the following steps:
s1, adding deionized water and NH 4 H 2 PO 4 Sequentially adding into a reaction vessel, stirring uniformly, and then adding P for a plurality of times in small amount 2 O 5 Uniformly stirring and reacting for 1-2h;
and S2, after the reaction in the step S1 is finished, heating the reaction solution to 40-100 ℃, adding a silicon-containing compound, uniformly stirring, and carrying out heat preservation reaction for 1-3d at 40-100 ℃ to generate the Si-P compound.
On the basis of the above technical solutions, preferably, the silicon-containing compound is one or a combination of more of inorganic polysilazane, organic polysilazane, a silane coupling agent, butyl orthosilicate, tetraethyl silicate, hexadecyltrimethoxysilane, silicon tetrachloride, dimethylsilicon dichloride and monomethylsilicon trichloride.
On the basis of the above technical scheme, preferably, the deionized water: NH 4 H 2 PO 4 ：P 2 O 5 : the mass ratio of the silicon-containing compound is (15-30): (10-15): (40-70): 1-30).
On the basis of the above technical scheme, preferably, in step S2, the silicon-containing compound is added dropwise into the reaction solution at a rate of 0.1-0.3 mL/min.
On the basis of the technical scheme, preferably, N is introduced in the reaction process of the step S2 2 ，N 2 The input amount is 0.3-0.5L/min.
In a second aspect, the invention provides a preparation method of a phosphoric acid etching solution, which comprises the steps of mixing phosphoric acid and an Si-P compound, and stirring at 600-800rpm for 5-10min at 20-30 ℃ to obtain the phosphoric acid etching solution.
In a third aspect, the invention provides a phosphoric acid etching solution for selectively etching SiN and SiO 2 Use in alternating stacked metal layers.
On the basis of the above technical scheme, the etching temperature is preferably 150-160 ℃.
Compared with the prior art, the phosphoric acid etching solution and the preparation method and application thereof have the following beneficial effects:
(1) After the phosphoric acid etching solution is used for etching the silicon wafer, siN/SiO 2 When the selection ratio reaches 500-2725, siO 2 No regeneration is carried out, and the etching effect is good.
(2) The preparation method of the Si-P compound in the phosphoric acid etching solution is simple, a catalyst and a large amount of organic solvent are not needed, and byproducts are few.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
All reagents used in the present application are commercially available reagents, and 85% phosphoric acid refers to an 85% phosphoric acid aqueous solution by mass concentration. The silane coupling agent is silane coupling agent KH550, and the inorganic polysilazane and the organic polysilazane are purchased from Ainta silicone oil Co., ltd. The present application is further illustrated by the following specific examples, which are intended to be merely illustrative of the present application and are not to be construed as limiting the present application.
Example 1
The phosphoric acid etching solution of the present embodiment includes 180g of 85% phosphoric acid and 20g of an Si-P compound.
The preparation method of the Si-P compound comprises the following steps:
the reaction vessel is a flask, a rotor is arranged in the flask, a drying tube is arranged above the flask, and a drying agent is contained in the drying tube and used for absorbing water.
S1, 15g of deionized water is added into a flask, and 10g of NH is added 4 H 2 PO 4 Adding into a reactor, stirring at 400rpm/s to dissolve, adding small amount of P40 g 2 O 5 After stirring uniformly, reacting for 1h to make NH 4 H 2 PO 4 Neutral water and P 2 O 5 The reaction was complete.
S2, after the reaction in the step S1 is finished, the temperature of the reaction liquid is increased to 40 ℃, inorganic polysilazane is dripped into the reaction liquid in the step S1 by a separating funnel according to the speed of 0.1mL/min, the total amount is 1g, then the inorganic polysilazane is uniformly stirred at 400rpm/S, and N is introduced 2 ，N 2 The introduction amount is 0.3L/min, the reaction is carried out for 3d at the temperature of 40 ℃ to generate Si-P compound and ammonia gas, and the generated ammonia gas passes through the introduced N 2 It is discharged.
The equation for the preparation of the Si-P compound of this example is:
in the preparation method of the phosphoric acid etching solution of the embodiment, phosphoric acid and a Si-P compound are mixed and stirred at 600rpm for 5min at 25 ℃ to obtain the phosphoric acid etching solution.
Example 2
The phosphoric acid etching solution of this example comprised 184g of 85% phosphoric acid and 16g of a Si-P compound.
The preparation method of the Si-P compound comprises the following steps:
the reaction vessel is a flask, a rotor is arranged in the flask, a drying tube is arranged above the flask, and a drying agent is contained in the drying tube and used for absorbing water.
S1, 18g of deionized water is added into a flask, and 11g of NH is added 4 H 2 PO 4 Adding into a reactor, stirring at 400rpm/s to dissolve, adding 42g of P in small amount 2 O 5 After stirring evenly, the mixture reacts for 1.5h to ensure that NH is generated 4 H 2 PO 4 Neutral water and P 2 O 5 The reaction was complete.
S2, after the reaction in the step S1 is finished, the temperature of the reaction liquid is raised to 50 ℃, the silane coupling agent is dripped into the reaction liquid in the step S1 by a separating funnel according to the speed of 0.2mL/min, the total amount is 5g, then the mixture is stirred at the constant speed of 400rpm/S, and N is introduced 2 ，N 2 The introduction amount is 0.4L/min, the reaction is carried out for 2d at the temperature of 55 ℃ to generate Si-P compound and ammonia gas, and the generated ammonia gas passes through the introduced N 2 It is discharged.
The preparation method of the phosphoric acid etching solution comprises the steps of mixing phosphoric acid and an Si-P compound, and stirring at 700rpm for 8min at the temperature of 25 ℃ to obtain the phosphoric acid etching solution.
Example 3
The phosphoric acid etching solution of this example includes 185g of 85% phosphoric acid and 15g of Si-P compound.
The preparation method of the Si-P compound comprises the following steps:
the reaction vessel is a flask, a rotor is arranged in the flask, a drying tube is arranged above the flask, and a drying agent is contained in the drying tube and used for absorbing water.
S1, 20g of deionized water is added into a flask, and 13g of NH is added 4 H 2 PO 4 Adding into a reactor, stirring at 400rpm/s to dissolve, adding 55g of P in small amount 2 O 5 After being stirred evenly, the mixture reacts for 2 hours to lead NH to be generated 4 H 2 PO 4 Neutral water and P 2 O 5 The reaction was complete.
S2, after the reaction in the step S1 is finished, the temperature of the reaction liquid is raised to 60 ℃, inorganic polysilazane is dripped into the reaction liquid in the step S1 by a separating funnel according to the speed of 0.2mL/min, the total amount is 20g, then the mixture is stirred at the constant speed of 400rpm/S, and N is introduced 2 ，N 2 The introduction amount is 0.5L/min, the reaction is carried out for 3d at the temperature of 60 ℃, si-P compound and ammonia gas are generated, and the generated ammonia gas passes through the introduced N 2 It is discharged.
The preparation method of the phosphoric acid etching solution comprises the steps of mixing phosphoric acid and a Si-P compound, and stirring at 800rpm for 10min at the temperature of 30 ℃ to obtain the phosphoric acid etching solution.
Example 4
The phosphoric acid etching solution of this example contained 190g of 85% phosphoric acid and 10g of Si-P compound.
The preparation method of the Si-P compound comprises the following steps:
the reaction vessel is a flask, a rotor is arranged in the flask, a drying tube is arranged above the flask, and a drying agent is contained in the drying tube and used for absorbing water.
S1, 25g of deionized water is added into a flask, and 14g of NH is added 4 H 2 PO 4 Adding into a reactor, stirring at 400rpm/s to dissolve, adding 60g of P in small amount 2 O 5 After being stirred evenly, the mixture reacts for 2 hours to lead NH to be generated 4 H 2 PO 4 Neutral water and P 2 O 5 The reaction was complete.
S2, after the reaction in the step S1 is finished, the temperature of the reaction liquid is increased to 80 ℃, silicon tetrachloride is dripped into the reaction liquid in the step S1 by a separating funnel according to the speed of 0.3mL/min, the total amount is 20g,then stirring at a constant speed of 400rpm/s, and introducing N 2 ，N 2 Introducing the solution at an amount of 0.5L/min, reacting at 40-100 deg.C for 3d to obtain Si-P compound and ammonia gas, and introducing N into the obtained ammonia gas 2 It is discharged.
The preparation method of the phosphoric acid etching solution comprises the steps of mixing phosphoric acid and a Si-P compound, and stirring at 800rpm for 5min at the temperature of 30 ℃ to obtain the phosphoric acid etching solution.
Example 5
The phosphoric acid etching solution of this example included 194g of 85% phosphoric acid and 6g of Si-P compound.
The preparation method of the Si-P compound comprises the following steps:
the reaction vessel is a flask, a rotor is arranged in the flask, a drying tube is arranged above the flask, and a drying agent is contained in the drying tube and used for absorbing water.
S1, 30g of deionized water is added into a flask, and 15g of NH is added 4 H 2 PO 4 Adding into a reactor, stirring at constant speed of 400rpm/s to dissolve, adding 70g of P in small amount 2 O 5 After stirring evenly, the mixture reacts for 1 hour to ensure that NH 4 H 2 PO 4 Water content and P 2 O 5 The reaction was complete.
S2, after the reaction in the step S1 is finished, the temperature of the reaction liquid is increased to 100 ℃, hexadecyl trimethoxy silane is dripped into the reaction liquid in the step S1 by a separating funnel according to the speed of 0.3mL/min, the total amount is 30g, then the mixture is stirred at a constant speed of 400rpm/S, and N is introduced 2 ，N 2 The introduction amount is 0.5L/min, the reaction is carried out for 3d at the temperature of 100 ℃, si-P compound and ammonia gas are generated, and the generated ammonia gas passes through the introduced N 2 It is discharged.
The preparation method of the phosphoric acid etching solution comprises the steps of mixing phosphoric acid and an Si-P compound, and stirring at 600rpm for 10min at the temperature of 30 ℃ to obtain the phosphoric acid etching solution.
Comparative example 1
The phosphoric acid etching solution of this comparative example was 200g of 85% phosphoric acid.
Comparative example 2
The phosphoric acid etching solution of the comparative example comprises 200g of 85% phosphoric acid, and the etching experiment is carried out after stirring at 600rpm at 158 ℃ to dissolve 5 silicon wafers with SiN.
Comparative example 3
The phosphoric acid etching solution of the comparative example comprises 180g of 85% phosphoric acid and 20g of inorganic polysilazane, and after the phosphoric acid and the inorganic polysilazane are stirred and mixed uniformly, the temperature is raised to 160 ℃, and after 5 silicon wafers with SiN are dissolved, an etching experiment is carried out to carry out an etching experiment.
SiN-SiO etching selectively by using etching solutions of the above examples and comparative examples 2 SiN metal layer film, etching temperature of 160 ℃ and etching results are shown in Table 1.
Table 1 examples and comparative examples etchant solutions performance comparisons
Table 1 shows that the etching solution of the embodiment of the invention is SiN/SiO 2 When the selection ratio reaches 500-5530, siO 2 None of the comparative examples, which contained no Si-P compounds, had a selectivity of only 36.7. Thus, the phosphoric acid etching solution of the invention has good etching performance, siN/SiO 2 High selectivity, and suitability for selective etching of SiN and SiO 2 Alternating metal layers.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the scope of the present invention, which is intended to cover any modifications, equivalents, improvements, etc. within the spirit and scope of the present invention.
Claims (10)
1. A phosphoric acid etching solution is characterized in that: comprises phosphoric acid and a Si-P compound, wherein the structural formula of the Si-P compound is as follows:
wherein R is CH 3 (CH 2 ) n or
n is an integer between 1 and 5.
2. The phosphoric acid etching solution of claim 1, wherein: the phosphoric acid etching solution comprises 90-97% of phosphoric acid with the concentration of 85% and 3-10% of Si-P compound according to the mass percentage of 100%.
3. The phosphoric acid etching solution of claim 1, wherein: the preparation method of the Si-P compound comprises the following steps:
s1, adding deionized water and NH 4 H 2 PO 4 Sequentially adding the mixture into a reaction vessel, uniformly stirring, and then adding P for a plurality of times in small amount 2 O 5 Uniformly stirring and then reacting for 1-2h;
and S2, after the reaction in the step S1 is finished, heating the reaction solution to 40-100 ℃, adding a silicon-containing compound, uniformly stirring, and carrying out heat preservation reaction for 1-3d at the temperature of 40-100 ℃ to generate the Si-P compound.
4. The phosphoric acid etching solution according to claim 3, wherein: the silicon-containing compound is one or a combination of more of inorganic polysilazane, organic polysilazane, a silane coupling agent, n-butyl silicate, tetraethyl silicate, hexadecyl trimethoxy silane, silicon tetrachloride, dimethyl silicon dichloride and monomethyl silicon trichloride.
5. The phosphoric acid etching solution according to claim 3, wherein: the deionized water: NH (NH) 4 H 2 PO 4 ：P 2 O 5 : the mass ratio of the silicon-containing compound is (15-30): (10-15): (40-70): 1-30).
6. The phosphoric acid etching solution according to claim 3, wherein: in step S2, the silicon-containing compound is added dropwise to the reaction solution at a rate of 0.1-0.3 mL/min.
7. The phosphoric acid etching solution according to claim 3, wherein: introducing N in the reaction process of the step S2 2 ，N 2 The input amount is 0.3-0.5L/min.
8. The method for preparing a phosphoric acid etching solution according to claims 1 to 7, wherein: mixing phosphoric acid and Si-P compound, and stirring at 600-800rpm for 5-10min at 20-30 deg.C to obtain phosphoric acid etching solution.
9. The method of claim 1-7, wherein the phosphoric acid etching solution is used for selectively etching SiN and SiO 2 Use in alternating stacked metal layers.
10. The method of claim 9, wherein the phosphoric acid etchant is used for selectively etching SiN and SiO 2 Use of alternating stacked metal layers, characterized in that: the etching temperature is 150-160 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211105892.2A CN115386377A (en) | 2022-09-09 | 2022-09-09 | Phosphoric acid etching solution, preparation method and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211105892.2A CN115386377A (en) | 2022-09-09 | 2022-09-09 | Phosphoric acid etching solution, preparation method and application |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115386377A true CN115386377A (en) | 2022-11-25 |
Family
ID=84127342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211105892.2A Pending CN115386377A (en) | 2022-09-09 | 2022-09-09 | Phosphoric acid etching solution, preparation method and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115386377A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102124064A (en) * | 2008-08-18 | 2011-07-13 | 日产化学工业株式会社 | Composition for forming silicon-containing resist underlayer film with onium group |
| WO2019182277A1 (en) * | 2018-03-23 | 2019-09-26 | 주식회사 제우스이엔피 | Etchant composition for silicon nitride film |
| KR20210023552A (en) * | 2019-08-23 | 2021-03-04 | 주식회사 제우스이엔피 | Etching composition for silicon nitride and method for preparing the same |
-
2022
- 2022-09-09 CN CN202211105892.2A patent/CN115386377A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102124064A (en) * | 2008-08-18 | 2011-07-13 | 日产化学工业株式会社 | Composition for forming silicon-containing resist underlayer film with onium group |
| WO2019182277A1 (en) * | 2018-03-23 | 2019-09-26 | 주식회사 제우스이엔피 | Etchant composition for silicon nitride film |
| KR20210023552A (en) * | 2019-08-23 | 2021-03-04 | 주식회사 제우스이엔피 | Etching composition for silicon nitride and method for preparing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101097275B1 (en) | A Composition for wet etching with high selectivity to silicon nitride | |
| KR101097277B1 (en) | A Composition for wet etching | |
| CN110527511B (en) | Etchant composition, method for etching insulating film, method for manufacturing semiconductor device, and silane compound | |
| KR101320416B1 (en) | A Composition for wet etching , and method of wet etching with the same | |
| CN110527512B (en) | Etchant composition and silane compound | |
| CN111363550A (en) | Selective etching liquid composition and preparation method and application thereof | |
| CN111019659B (en) | Selective silicon etching liquid | |
| CN115386377A (en) | Phosphoric acid etching solution, preparation method and application | |
| CN104039925B (en) | The wet etch process of etching solution composition and this etching solution composition of use | |
| CN114621769A (en) | Etching composition and application thereof | |
| CN111100640A (en) | Additive for etching composition, method for preparing same, and etching composition comprising same | |
| US20050159011A1 (en) | Selective etching silicon nitride | |
| CN112011341B (en) | Etching composition, method for etching insulator and method for manufacturing semiconductor device, and novel compound | |
| KR102520371B1 (en) | Etching composition for silicon nitride layer and etching process of silicon nitride layer using the same | |
| EP2110848B1 (en) | Modifier for low dielectric constant film, and method for production thereof | |
| KR102495158B1 (en) | Silica particle dispersion and manufacturing method thereof | |
| WO2023223936A1 (en) | Silicon nitride etching liquid composition | |
| JP7496253B2 (en) | Silicon nitride film etching solution and method for manufacturing semiconductor device using same | |
| CN110655924B (en) | Silicon substrate etching solution | |
| CN112442372B (en) | Etching composition, method of etching insulating film of semiconductor device using the same, and method of manufacturing semiconductor device | |
| CN112210379B (en) | Silicon nitride film etching solution and method for manufacturing semiconductor device using the same | |
| CN115386378A (en) | Etching solution composition and preparation method thereof | |
| CN115404077A (en) | Etching solution composition and preparation method thereof | |
| TW202321421A (en) | Silicon nitride film etching composition and manufacturing method thereof | |
| TW202214822A (en) | Aqueous solution and method for etching silicon oxide |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |