CN115378395A - Film bulk acoustic resonator with good heat dissipation, preparation method and filter - Google Patents
Film bulk acoustic resonator with good heat dissipation, preparation method and filter Download PDFInfo
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- CN115378395A CN115378395A CN202210985730.6A CN202210985730A CN115378395A CN 115378395 A CN115378395 A CN 115378395A CN 202210985730 A CN202210985730 A CN 202210985730A CN 115378395 A CN115378395 A CN 115378395A
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 229910052751 metal Inorganic materials 0.000 claims description 181
- 239000002184 metal Substances 0.000 claims description 181
- 239000010408 film Substances 0.000 claims description 60
- 238000002161 passivation Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 238000011049 filling Methods 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000004806 packaging method and process Methods 0.000 claims description 8
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
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- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
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- 238000004544 sputter deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02047—Treatment of substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to the technical field of film bulk acoustic resonators, in particular to a film bulk acoustic resonator with good heat dissipation, a preparation method and a filter. The first conductive bonding pad, the second conductive bonding pad and the heat conducting bonding pad can guide heat generated by the film bulk acoustic resonator out of the supporting substrate in time, and the heat dissipation capacity of the film bulk acoustic resonator is enhanced, so that the film bulk acoustic resonator with good heat dissipation property is realized.
Description
Technical Field
The invention relates to the technical field of film bulk acoustic resonators, in particular to a film bulk acoustic resonator with good heat dissipation, a preparation method and a filter.
Background
In a radio frequency front end module of a wireless communication system, a filter is an indispensable important component, and the filter is mainly used for screening signals so as to realize the functions of receiving and transmitting the signals. Common filters in mobile phones include surface acoustic wave filters, solid-state bulk acoustic wave filters, thin film bulk acoustic wave filters, and the like. As a new technology in recent years, a Film Bulk Acoustic Resonator (FBAR) filter, that is, a film bulk acoustic filter, including a film bulk acoustic resonator has the characteristics of small volume, small insertion loss, high frequency, and high power capacity, and is very suitable for next-generation high-frequency mobile terminal products.
The FBAR is generally composed of three parts, namely a metal film/piezoelectric material/metal film stacked "sandwich" structure, and the operation principle of the FBAR is based on the piezoelectric effect and the inverse piezoelectric effect of the piezoelectric material, so as to convert an electrical signal into sound wave vibration of the piezoelectric material, wherein the resonance frequency of the FBAR is in inverse proportion to the stacking thickness in the vertical direction, and thus the operation frequency of the FBAR is controlled by the stacking thickness, and the higher the frequency is, the thinner the stacked structure is.
In high frequency FBAR products, the thickness of the "sandwich" structure is only a few tens to a few hundreds of nanometers. Reducing the stack thickness not only increases the film resistivity of the metal electrodes, but also reduces the lattice quality of the deposited or sputtered piezoelectric material. The former increases the electrical losses of the FBAR, and the latter increases the acoustic losses of the FBAR, which are mostly dissipated as heat. If the heat cannot be conducted out in time, the power capacity of the FBAR is limited due to overheating of the FBAR, the service life of the FBAR is greatly reduced, and the FBAR can be burnt out at any time;
further, as shown in fig. 17, in a conventional film bulk acoustic resonator, a metal material layer 42 is first attached in a cavity of a lower substrate 39, specifically, at the bottom and side of the cavity, and then a metal via 45 and a pad 46 are deposited by a back opening method. The sandwich structure of the film bulk acoustic resonator body is composed of a top electrode 44, a piezoelectric layer 43 and a bottom electrode 41, wherein the top electrode 44, the piezoelectric layer 43 and the bottom electrode 41 are all positioned between the lower substrate 39 and the upper substrate 40, and heat generated by vibration of the top electrode 44, the piezoelectric layer 43 and the bottom electrode 41 can be conducted to a bonding pad 46 on the back surface of the lower substrate 39 through the connection of the bottom electrode 41 and the metal material layer 42 and a metal through hole 45. Although the heat dissipation capability of the device is improved by the structural method, the improvement effect is not obvious, and the connection between the bottom electrode 41 and the metal material layer 42 is too weak, so that a great failure risk exists. Meanwhile, since the contact area of the metal material layer 42 and the cavity of the lower substrate 39 is large, there may be some electrical leakage.
Disclosure of Invention
The invention provides a film bulk acoustic resonator with good heat dissipation, a preparation method and a filter, aiming at the defects of the prior art.
The technical scheme of the film bulk acoustic resonator with good heat dissipation of the invention is as follows:
the piezoelectric ceramic material comprises a supporting substrate, a heat conduction layer, a first electrode layer, a piezoelectric layer, a second electrode layer and a passivation layer which are sequentially stacked, wherein the supporting substrate is provided with a first groove, the heat conduction layer is positioned on the surface of the supporting substrate where the first groove is located, and each surface in the first groove is covered by the heat conduction layer;
the first electrode layer comprises a first local electrode layer and a second local electrode layer which are separated from each other, the first local electrode layer is covered on the opening of the first groove to form a first cavity, and the second local electrode layer is electrically connected with the second electrode layer;
the first local electrode layer with the heat-conducting layer is connected with first electrically conductive pad, just first electrically conductive pad extends to outside the supporting substrate, the second local electrode layer with the heat-conducting layer is connected with the electrically conductive pad of second, just the electrically conductive pad of second extends to outside the supporting substrate, the heat-conducting layer is connected with the heat-conducting pad, just the heat-conducting pad extends to outside the supporting substrate.
The film bulk acoustic resonator with good heat dissipation has the following beneficial effects:
on the one hand, the heat generated by the film bulk acoustic resonator can be timely conducted out of the supporting substrate through the first conductive bonding pad, the second conductive bonding pad and the heat conducting bonding pad, the heat dissipation capacity of the film bulk acoustic resonator is enhanced, the heat damage to the film bulk acoustic resonator is reduced, the mechanical strength is high, and therefore the film bulk acoustic resonator with good heat dissipation characteristic and high mechanical strength is achieved.
On the basis of the scheme, the film bulk acoustic resonator with good heat dissipation of the invention can be further improved as follows.
Furthermore, a sixth through hole extending to the first local electrode layer is formed in the supporting substrate, the first conductive pad fills the sixth through hole and extends to the outside of the supporting substrate, a first through hole extending to the second local electrode layer is formed in the supporting substrate, and the second conductive pad fills the first through hole and extends to the outside of the supporting substrate.
The four heat conduction bonding pads are respectively a first heat conduction bonding pad, a second heat conduction bonding pad, a third heat conduction bonding pad and a fourth heat conduction bonding pad;
the supporting substrate is provided with a second through hole and a third through hole which extend to the heat conduction layer, a fourth through hole and a fifth through hole, the first heat conduction pad fills the second through hole and extends to the outside of the supporting substrate, the second heat conduction pad fills the third through hole and extends to the outside of the supporting substrate, the third heat conduction pad fills the fourth through hole and extends to the outside of the supporting substrate, and the fourth heat conduction pad fills the fifth through hole and extends to the outside of the supporting substrate.
The beneficial effect of adopting the above further scheme is that: the heat dissipation capability of the film bulk acoustic resonator is further enhanced.
Further, a portion of the first heat conduction pad extending to the outside of the supporting substrate, a portion of the second heat conduction pad extending to the outside of the supporting substrate, a portion of the third heat conduction pad extending to the outside of the supporting substrate, and a portion of the fourth heat conduction pad extending to the outside of the supporting substrate are connected.
Further, the passivation layer covers the second electrode layer, and the second electrode layer is electrically connected to the second local electrode layer.
The piezoelectric layer is covered on an opening of the second groove to form a second cavity, the passivation layer and the second electrode layer are located in the second cavity, and the passivation layer and the second electrode layer are in non-contact with the packaging cover plate.
Further, the heat conduction layer is made of diamond.
Further, the first conductive pad and the second conductive pad are made of copper, tungsten, gold, titanium, aluminum or silver.
The technical scheme of the preparation method for preparing the film bulk acoustic resonator with good heat dissipation is as follows:
forming a first groove on a support substrate, forming a first blind hole, a second blind hole, a third blind hole, a fourth blind hole, a fifth blind hole and a sixth blind hole on the surface of the support substrate where an opening of the first groove is located, and filling metal in the first blind hole, the second blind hole, the third blind hole, the fourth blind hole, the fifth blind hole and the sixth blind hole;
preparing a heat conduction layer on the surface of the opening of the first groove of the support substrate, wherein the heat conduction layer covers each surface in the first groove, and filling a sacrificial material in the first groove covered with the heat conduction layer to obtain a sacrificial material layer;
removing part of the heat conduction layer covering the opening of the first blind hole, exposing metal at the opening of the first blind hole, removing part of the heat conduction layer covering the opening of the sixth blind hole, exposing metal at the opening of the sixth blind hole, preparing a first metal layer, covering the sacrificial material layer, the rest of the heat conduction layer, the metal at the opening of the first blind hole and the metal at the opening of the sixth blind hole by the first metal layer, and patterning the first metal layer to obtain a first electrode layer;
the first electrode layer comprises a first local electrode layer and a second local electrode layer which are separated from each other, the first local electrode layer is covered on the metal at the opening of the first groove and the metal at the opening of the sixth blind hole, and the second local electrode layer is covered on the metal at the opening of the first blind hole;
preparing a piezoelectric layer, wherein the piezoelectric layer covers the first partial electrode layer, the second partial electrode layer and the exposed part of the heat conduction layer;
sequentially preparing a second electrode layer and a passivation layer on the piezoelectric layer, wherein the passivation layer is covered on the second electrode layer;
electrically connecting the other end of the second electrode layer with the second local electrode layer;
removing the sacrificial material layer to obtain a first cavity;
preparing a packaging cover plate with a second groove, enabling the piezoelectric layer to cover the opening of the second groove to form a second cavity, wherein the passivation layer and the second electrode layer are both positioned in the second cavity, and the passivation layer and the second electrode layer are both in non-contact with the packaging cover plate;
thinning the back of the support substrate to expose the metal at the bottom of the first blind hole, the metal at the bottom of the second blind hole, the metal at the bottom of the third blind hole, the metal at the bottom of the fourth blind hole, the metal at the bottom of the fifth blind hole and the metal at the bottom of the sixth blind hole;
the preparation is used for covering and establishes the fourth metal level of the bottom of first blind hole obtains the second electrically conductive pad, and the preparation is used for covering and establishes the fifth metal level of the bottom of second blind hole obtains first heat conduction pad, and the preparation is used for covering and establishes the sixth metal level of the bottom of third blind hole obtains the second heat conduction pad, and the preparation is used for covering and establishes the seventh metal level of the bottom of fourth blind hole obtains the third heat conduction pad, and the preparation is used for covering and establishes the eighth metal level of the bottom of fifth blind hole obtains the fourth heat conduction pad, and the preparation is used for covering and establishes the ninth metal level of the bottom of sixth blind hole obtains first electrically conductive pad.
The preparation method for preparing the film bulk acoustic resonator with good heat dissipation has the following beneficial effects:
the film bulk acoustic resonator with good heat dissipation characteristic and high mechanical strength can be prepared.
The film bulk acoustic wave filter comprises the film bulk acoustic resonator with good heat dissipation.
Drawings
Fig. 1 is a schematic structural diagram of a film bulk acoustic resonator with good heat dissipation according to an embodiment of the present invention;
fig. 2 is a schematic flow chart of a manufacturing method for manufacturing a film bulk acoustic resonator with good heat dissipation according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of the supporting substrate after forming a first groove therein;
FIG. 4 is a schematic cross-sectional view after forming a blind hole;
FIG. 5 is a schematic cross-sectional view of the first, second, third, fourth, fifth, and sixth blind holes filled with metal;
FIG. 6 is a schematic cross-sectional view of a prepared thermally conductive layer;
FIG. 7 is a schematic cross-sectional view after filling with a sacrificial material;
FIG. 8 is a schematic cross-sectional view of a patterned thermally conductive layer;
FIG. 9 is a schematic cross-sectional view of the first electrode layer after being prepared;
FIG. 10 is a schematic cross-sectional view of a piezoelectric layer after fabrication;
FIG. 11 is a schematic cross-sectional view of the second electrode layer after being fabricated;
FIG. 12 is a schematic cross-sectional view after fabrication of a passivation layer;
fig. 13 is a schematic cross-sectional view of the second electrode layer after the other end of the second electrode layer is electrically connected to the second local electrode layer;
FIG. 14 is a cross-sectional view of the sacrificial material layer being removed;
FIG. 15 is a cross-sectional view of an opening for covering a piezoelectric layer in a second recess;
FIG. 16 is a schematic cross-sectional view of a thinning process performed on the backside of a support substrate;
fig. 17 is a schematic cross-sectional structure of a conventional film bulk acoustic resonator;
in the drawings, the components represented by the respective reference numerals are listed below:
10. a support substrate; 101. a first groove; 102. a first blind hole; 103. a second blind hole; 104. a third blind hole; 105. a fourth blind hole; 106. a fifth blind hole; 107. a sixth blind hole; 11. metal filled in the first blind hole; 12. a heat conductive layer; 13. a sacrificial material layer; 14. a first electrode layer; 141. a first partial electrode layer; 142. a second partial electrode layer; 15. a piezoelectric layer; 16. a second electrode layer; 17. a passivation layer; 18. a third metal layer; 19. a first cavity; 20. packaging the cover plate; 21. a second cavity; 22. a fourth metal layer; 23. a fifth metal layer; 24. a sixth metal layer; 25. a seventh metal layer, 26, an eighth metal layer; 27. a ninth metal layer; 28. a first conductive pad; 29. a second conductive pad; 30. a first thermally conductive pad; 31. a second thermally conductive pad; 32. a third thermally conductive pad; 33. a fourth thermally conductive pad; 34. metal filled in the second blind hole; 35. metal filled in the third blind hole; 36. metal filled in the fourth blind hole; 37. metal filled in the fifth blind hole; 38. metal filled in the sixth blind hole; 39. the lower substrate of the existing film bulk acoustic resonator; 40. the upper substrate of the existing film bulk acoustic resonator; 41. a bottom electrode 42 of the existing film bulk acoustic resonator, a metal material of the existing film bulk acoustic resonator; 43. a piezoelectric layer of an existing film bulk acoustic resonator; 44. a top electrode of an existing film bulk acoustic resonator; 45. a metal via hole of an existing film bulk acoustic resonator; 46. the bonding pad of the existing film bulk acoustic resonator.
Detailed Description
As shown in fig. 1, a film bulk acoustic resonator with good heat dissipation according to an embodiment of the present invention includes a supporting substrate 10, a heat conducting layer 12, a first electrode layer 14, a piezoelectric layer 15, a second electrode layer 16, and a passivation layer 17, which are sequentially stacked, where the supporting substrate 10 is provided with a first groove 101, the heat conducting layer 12 is located on a surface of the supporting substrate 10 where the first groove 101 is located, and each surface in the first groove 101 is covered by the heat conducting layer 12;
the first electrode layer 14 includes a first partial electrode layer 141 and a second partial electrode layer 142 separated from each other, the first partial electrode layer 141 overlies the opening of the first groove 101 to form a first cavity 19, and the second partial electrode layer 142 is electrically connected to the second electrode layer 16;
the first partial electrode layer 141 and the heat conductive layer 12 are connected with a first electrically conductive pad 28, the first electrically conductive pad 28 extends out of the support substrate 10, the second partial electrode layer 142 and the heat conductive layer 12 are connected with a second electrically conductive pad 29, the second electrically conductive pad 29 extends out of the support substrate 10, the heat conductive layer 12 is connected with a heat conductive pad, and the heat conductive pad extends out of the support substrate 10.
The material of the supporting substrate 10 is a substrate material commonly used in semiconductor process, including but not limited to Si, ge, and Al sapphire 2 O 3 Quartz SiO 2 Silicon carbide SiC, organic polymers, and the like.
The heat conducting layer 12 is made of diamond. The heat conductivity of diamond is high, the heat dissipation capacity of the film bulk acoustic resonator is further enhanced, and the material of the heat conduction layer 12 can be set according to actual conditions.
The first electrode layer 14 and the second electrode layer 16 are made of metal materials with good conductivity, including but not limited to molybdenum Mo, copper Cu, tungsten W, gold Au, titanium Ti, aluminum Al, platinum Pt, and the like;
the piezoelectric layer 15 is made of a piezoelectric material, including but not limited to aluminum nitride AlN and lithium niobate LiNbO 3 Lithium tantalate LiTaO 3 And the like.
Wherein, the passivation layer 17 is made of silicon dioxide SiO 2 Aluminum nitride AlN, and the like.
The cross section of the first groove 101 is trapezoidal, and the first groove 101 can be set to be in other shapes according to actual conditions;
the second local electrode layer 142 and the second electrode layer 16 are electrically connected in the following manner:
etching is carried out on the piezoelectric layer 15 to expose the second local electrode layer 142, then metal is deposited to form the third metal layer 18, and the third metal layer 18 covers one end of the second electrode layer 16, so that the second local electrode layer 142 is electrically connected with the second electrode layer 16 through the third metal layer 18. The material of the third metal layer 18 is copper, tungsten, gold, titanium, aluminum or silver.
Wherein, set up the sixth through-hole that extends to first local electrode layer 141 on the supporting substrate 10, first conductive pad 28 fills the fourth through-hole and extends to outside the supporting substrate 10, set up the first through-hole that extends to second local electrode layer 142 on the supporting substrate 10, second conductive pad 29 fills the first through-hole and extends to outside the supporting substrate 10, specifically:
1) The specific structure of the first conductive pad 28 is: a sixth through hole extending to the first local electrode layer 141 is opened on the supporting substrate 10, that is, the bottom of the sixth through hole exposes the first local electrode layer 141, a metal such as copper, tungsten, gold, titanium, aluminum or silver is deposited in the sixth through hole and extends to the outside of the supporting substrate 10, and the metal deposited in the sixth through hole and the metal extending to the outside of the supporting substrate 10, that is, the ninth metal layer 27, are the first conductive pad 28.
2) The specific structure of the second conductive pad 29 is: a first through hole extending to the second partial electrode layer 142 is formed on the supporting substrate 10, that is, the second partial electrode layer 142 is exposed at the bottom of the first through hole, a metal such as copper, tungsten, gold, titanium, aluminum or silver is deposited in the first through hole and extends to the outside of the supporting substrate 10, and the metal deposited in the first through hole and the metal extending to the outside of the supporting substrate 10, that is, the fourth metal layer 22, are the second conductive pads 29.
Wherein, the concrete structure of heat conduction pad does: forming a through hole in the supporting substrate 10 until the heat conducting layer 12 is exposed, depositing metals such as copper, tungsten, gold, titanium, aluminum or silver in the through hole, and extending the metals to the outside of the supporting substrate 10, wherein the metals deposited in the through hole and the metals extending to the outside of the supporting substrate 10 are heat conducting pads; a plurality of electric conduction welding pads and a plurality of heat conduction welding pads can be arranged according to actual conditions.
The first conductive pad 28, the second conductive pad 29, the conductive layer 12 and the heat conductive pad, such as the first heat conductive pad 30, the second heat conductive pad 31, the third heat conductive pad 32 and the fourth heat conductive pad 33, can guide heat generated by the film bulk acoustic resonator out of the supporting substrate 10 in time, enhance the heat dissipation capability of the film bulk acoustic resonator, reduce the thermal damage to the film bulk acoustic resonator, and have high mechanical strength, thereby realizing the film bulk acoustic resonator with good heat dissipation characteristic and high mechanical strength.
In addition, in the conventional film bulk acoustic resonator, the bottom electrode 41 and the metal material layer 42 are connected with the side wall of the metal material layer 42 by the plane of the bottom electrode 41, the thickness of the side wall of the metal material layer 42 is generally below 2 micrometers, that is, the width of the connection surface does not exceed 2 micrometers, but the connection mode in the invention is a metal via hole, the diameter of which is above 10 micrometers, the metal 1 filled in the first blind hole and the metal 38 filled in the sixth blind hole can be regarded as metal columns 38 and 11, and the effect is obvious no matter whether the electricity or the heat is conducted; wherein, the metal via hole embodies specifically: the connection between the first local electrode layer 141, the metal 38 filled in the sixth blind hole, and the ninth metal layer 27, and the connection between the second local electrode layer 142, the metal 11 filled in the first blind hole, and the fourth metal layer 22, because the metal material layer 42 of the conventional film bulk acoustic resonator is in contact with the whole cavity, and the radiation area thereof is much larger than the radiation area of the metal via in the present invention in contact with the supporting substrate 10, the electrical leakage is relatively large, that is, the electrical leakage of the film bulk acoustic resonator of the present invention is small.
Optionally, in the above technical solution, four heat conducting pads are included, where the four heat conducting pads are a first heat conducting pad 30, a second heat conducting pad 31, a third heat conducting pad 32, and a fourth heat conducting pad 33, respectively;
the supporting substrate 10 is provided with a second through hole, a third through hole 104, a fourth through hole and a fifth through hole extending to the heat conducting layer 12, the first heat conducting pad 30 fills the second through hole and extends to the outside of the supporting substrate 10, the second heat conducting pad 31 fills the third through hole and extends to the outside of the supporting substrate 10, the third heat conducting pad 32 fills the fourth through hole and extends to the outside of the supporting substrate 10, and the fourth heat conducting pad 33 fills the fifth through hole and extends to the outside of the supporting substrate 10. The heat dissipation capability of the film bulk acoustic resonator can be further enhanced.
The specific implementation manner of the first heat conducting pad 30, the second heat conducting pad 31, the third heat conducting pad 32 and the fourth heat conducting pad 33 is as follows:
the supporting substrate 10 is provided with a second through hole, a third through hole, a fourth through hole and a fifth through hole extending to the heat conducting layer 12, that is, the bottom of the second through hole, the bottom of the third through hole, the bottom of the fourth through hole and the bottom of the fifth through hole all expose the heat conducting layer 12, and the metals such as copper, tungsten, gold, titanium, aluminum or silver are deposited in the second through hole, the third through hole, the fourth through hole and the fifth through hole and extend to the outside of the supporting substrate 10, then:
1) The metal deposited in the second through hole and the metal extending out of the supporting substrate 10, i.e., the fifth metal layer 23, are the first heat conducting pad 30;
2) The metal deposited in the third through hole and the metal extending out of the support substrate 10, i.e., the sixth metal layer 24, are the second heat conducting pad 31;
3) The metal deposited in the fourth via hole and the metal extending out of the support substrate 10, i.e., the seventh metal layer 25, are the third heat conducting pad 32;
4) The metal deposited in the fifth via hole and the metal extending out of the supporting substrate 10, i.e., the eighth metal layer 26, are the fourth heat conducting pads 33.
Optionally, in the above technical solution, a portion of the first heat conduction pad 30 extending to the outside of the support substrate 10, a portion of the second heat conduction pad 31 extending to the outside of the support substrate 10, a portion of the third heat conduction pad 32 extending to the outside of the support substrate 10, and a portion of the fourth heat conduction pad 33 extending to the outside of the support substrate 10 are connected, that is, the fifth metal layer 23 of the first heat conduction pad 30, the sixth metal layer 24 of the second heat conduction pad 31, the seventh metal layer 25 of the third heat conduction pad 32, and the eighth metal layer 26 of the fourth heat conduction pad 33 are connected, and an area after the connection is slightly larger than the first cavity 19.
Optionally, in the above technical solution, the passivation layer 17 covers the second electrode layer 16, and the second electrode layer 16 is electrically connected to the second local electrode layer 142, which may specifically be:
the passivation layer 17 covers one end of the second electrode layer 16, the passivation layer 17 is connected to the piezoelectric layer 15, and the other end of the second electrode layer 16 is electrically connected to the second local electrode layer 142. That is, the passivation layer 17 and the third metal layer 18 are respectively coated on both ends of the second electrode layer 16.
Optionally, in the above technical solution, the package structure further includes a package cover plate 20 provided with a second groove, the piezoelectric layer 15 is disposed on an opening of the second groove to form a second cavity 21, the passivation layer 17 and the second electrode layer 16 are both located in the second cavity 21, and the passivation layer 17 and the second electrode layer 16 are both in non-contact with the package cover plate 20.
The material of the package cover plate 20 is a substrate material commonly used in semiconductor process, including but not limited to Si, ge, and Al sapphire 2 O 3 Quartz SiO 2 Silicon carbide SiC, organic polymers, etc., the package cover plate 20 serves a protective function.
The cross section of the second groove is rectangular, and the second groove can be set into other shapes according to actual conditions.
As shown in fig. 2, a method for manufacturing a film bulk acoustic resonator with good heat dissipation according to an embodiment of the present invention includes:
s1, forming a first groove 101 in a support substrate 10, forming a first blind hole 102, a second blind hole 103, a third blind hole 104, a fourth blind hole 105, a fifth blind hole 106 and a sixth blind hole 107 on the surface of the support substrate 10 where an opening of the first groove 101 is located, and filling metal in the first blind hole 102, the second blind hole 103, the third blind hole 104, the fourth blind hole 105, the fifth blind hole 106 and the sixth blind hole 107;
s2, preparing a heat conduction layer 12 on the surface of the support substrate 10 where the opening of the first groove 101 is located, wherein each surface in the first groove 101 is covered by the heat conduction layer 12, and the first groove 101 covered by the heat conduction layer 12 is filled with a sacrificial material to obtain a sacrificial material layer 13;
s3, removing part of the heat conduction layer 12 covering the opening of the first blind hole 102, exposing metal at the opening of the first blind hole 102, removing part of the heat conduction layer 12 covering the opening of the sixth blind hole 107, exposing metal at the opening of the sixth blind hole 107, preparing a first metal layer, covering the first metal layer with a sacrificial material layer 13, the rest of the heat conduction layer 12, the metal at the opening of the first blind hole 102 and the metal at the opening of the sixth blind hole 107, and patterning the first metal layer to obtain a first electrode layer 14;
s4, the first electrode layer 14 comprises a first local electrode layer 141 and a second local electrode layer 142 which are separated from each other, the first local electrode layer 141 covers the metal at the opening of the first groove 101 and the metal at the opening of the sixth blind hole 107, and the second local electrode layer 142 covers the metal at the opening of the first blind hole 102;
s5, preparing a piezoelectric layer 15, wherein the piezoelectric layer 15 covers the first partial electrode layer 141, the second partial electrode layer 142 and the exposed part of the heat conduction layer 12;
s6, sequentially preparing a second electrode layer 16 and a passivation layer 17 on the piezoelectric layer 15, wherein the passivation layer 17 covers the second electrode layer 16;
s7, electrically connecting the second electrode layer 16 and the second local electrode layer 142; the method specifically comprises the following steps: the passivation layer 17 covers one end of the second electrode layer 16, the passivation layer 17 is connected to the piezoelectric layer 15, and the other end of the second electrode layer 16 is electrically connected to the second local electrode layer 142. That is, the passivation layer 17 and the third metal layer 18 are respectively coated on both ends of the second electrode layer 16.
S8, removing the sacrificial material layer 13 to obtain a first cavity 19;
s9, preparing a packaging cover plate 20 with a second groove, enabling the piezoelectric layer 15 to cover the opening of the second groove to form a second cavity 21, enabling the passivation layer 17 and the second electrode layer 16 to be located in the second cavity 21, and enabling the passivation layer 17 and the second electrode layer 16 to be in non-contact with the packaging cover plate 20;
s10, thinning the back of the support substrate 10 to expose the metal at the bottom of the first blind via 102, the metal at the bottom of the second blind via 103, the metal at the bottom of the third blind via 104, the metal at the bottom of the fourth blind via 105, the metal at the bottom of the fifth blind via 106, and the metal at the bottom of the sixth blind via 107;
s11, preparing a fourth metal layer 22 for covering the bottom of the first blind hole 102 to obtain a second conductive pad 29, preparing a fifth metal layer 23 for covering the bottom of the second blind hole 103 to obtain a first heat-conducting pad 30, preparing a sixth metal layer 24 for covering the bottom of the third blind hole 104 to obtain a second heat-conducting pad 31, preparing a seventh metal layer 25 for covering the bottom of the fourth blind hole 105 to obtain a third heat-conducting pad 32, preparing an eighth metal layer 26 for covering the bottom of the fifth blind hole 106 to obtain a fourth heat-conducting pad 33, and preparing a ninth metal layer 27 for covering the bottom of the sixth blind hole 107 to obtain a first conductive pad 28.
A manufacturing method for manufacturing a film bulk acoustic resonator with good heat dissipation of the present invention is illustrated by the following examples, specifically:
s10, forming a first groove 101 in the supporting substrate 10, specifically:
forming a first groove 101 with a certain depth on the supporting substrate 10 through photolithography and etching processes, wherein the depth can be set according to actual conditions, as shown in fig. 3;
s11, forming a blind hole, specifically:
on the surface of the supporting substrate 10 where the opening of the first groove 101 is located, a first blind hole 102, a second blind hole 103, a third blind hole 104, a fourth blind hole 105, a fifth blind hole 106 and a sixth blind hole 107 are formed by photolithography and etching processes, as shown in fig. 4;
s12, filling metal into the first blind hole 102, the second blind hole 103, the third blind hole 104, the fourth blind hole 105, the fifth blind hole 106 and the sixth blind hole 107 by using sputtering, evaporation or electroplating processes, wherein the metal 11 filled into the first blind hole, the metal 34 filled into the second blind hole, the metal 35 filled into the third blind hole, the metal 36 filled into the fourth blind hole, the metal 37 filled into the fifth blind hole and the metal 38 filled into the sixth blind hole are as shown in fig. 5.
S13, preparing a heat conduction layer 12, specifically:
preparing a heat conducting layer 12 on the surface of the supporting substrate 10 where the opening of the first groove 101 is located by using sputtering, evaporation, coating or chemical vapor deposition process, and covering each surface in the first groove 101 with the heat conducting layer 12, as shown in fig. 6;
s14, filling a sacrificial material in the first groove 101 covered with the heat conducting layer 12 to obtain a sacrificial material layer 13, as shown in fig. 7;
s15, patterning the heat conducting layer 12 by photolithography, etching, and other processes to remove a portion of the heat conducting layer 12 covering the opening of the first blind hole 102, expose metal at the opening of the first blind hole 102, remove a portion of the heat conducting layer 12 covering the opening of the sixth blind hole 107, and expose metal at the opening of the sixth blind hole 107, as shown in fig. 8;
s16, preparing the first electrode layer 14, specifically:
preparing a first metal layer, wherein the first metal layer covers the sacrificial material layer 13, the rest of the heat conducting layer 12, the metal at the opening of the first blind hole 102 and the metal at the opening of the sixth blind hole 107, and patterning the first metal layer through photoetching, etching and other processes to obtain a first electrode layer 14;
the first electrode layer 14 comprises a first partial electrode layer 141 and a second partial electrode layer 142 which are separated from each other, the first partial electrode layer 141 covers the metal at the opening of the first groove 101 and at the opening of the sixth blind hole 107, and the second partial electrode layer 142 covers the metal at the opening of the first blind hole 102, as shown in fig. 9;
s17, preparing the piezoelectric layer 15, specifically:
preparing the piezoelectric layer 15 by sputtering or chemical vapor deposition, and the like, wherein the piezoelectric layer 15 covers the first partial electrode layer 141, the second partial electrode layer 142, and the exposed portion of the heat conducting layer 12, as shown in fig. 10;
s18, preparing the second electrode layer 16, specifically:
preparing a second metal layer on the piezoelectric layer 15, and patterning the second metal layer through processes such as photolithography and etching to obtain a second electrode layer 16, as shown in fig. 11;
s19, preparing a passivation layer 17, specifically:
depositing and preparing a layer of metal material on the piezoelectric layer 15, and patterning the layer of metal material to obtain a passivation layer 17, or directly depositing the passivation layer 17, wherein the passivation layer 17 covers one end of the second electrode layer 16, and the passivation layer 17 is connected with the piezoelectric layer 15, as shown in fig. 12;
s20, electrically connecting the other end of the second electrode layer 16 with the second local electrode layer 142, specifically:
etching is performed on the piezoelectric layer 15 to expose the second local electrode layer 142, then metal is deposited to form a third metal layer 18, and the third metal layer 18 covers one end of the second electrode layer 16, so that the second local electrode layer 142 is electrically connected with the second electrode layer 1618 through the third metal layer 18, as shown in fig. 13.
S21, removing the sacrificial material layer 13 to obtain a first cavity 19, as shown in FIG. 14;
s22, preparing a package cover plate 20 having a second groove, and arranging a piezoelectric layer 15 on an opening of the second groove to form a second cavity 21, where the passivation layer 17 and the second electrode layer 16 are both located in the second cavity 21, and the passivation layer 17 and the second electrode layer 16 are both in non-contact with the package cover plate 20, as shown in fig. 15;
s23, thinning the back of the support substrate 10 to expose the metal at the bottom of the first blind hole 102, the metal at the bottom of the second blind hole 103, the metal at the bottom of the third blind hole 104, the metal at the bottom of the fourth blind hole 105, the metal at the bottom of the fifth blind hole 106, and the metal at the bottom of the sixth blind hole 107, where the first blind hole 102 becomes a first through hole, the second blind hole 103 becomes a second through hole, the third blind hole 104 becomes a third through hole, the fourth blind hole 105 becomes a fourth through hole, the fifth blind hole 106 becomes a fifth through hole, and the sixth blind hole 107 becomes a sixth through hole, as shown in fig. 16.
S24, preparing a fourth metal layer 22 for covering the bottom of the first blind via 102 to obtain a second conductive pad 29, preparing a fifth metal layer 23 for covering the bottom of the second blind via 103 to obtain a first conductive pad 30, preparing a sixth metal layer 24 for covering the bottom of the third blind via 104 to obtain a second conductive pad 31, preparing a seventh metal layer 25 for covering the bottom of the fourth blind via 105 to obtain a third conductive pad 32, preparing an eighth metal layer 26 for covering the bottom of the fifth blind via 106 to obtain a fourth conductive pad 33, preparing a ninth metal layer 27 for covering the bottom of the sixth blind via 107 to obtain a first conductive pad 28, thereby obtaining the film bulk acoustic resonator with good heat dissipation as shown in fig. 1.
In the above, the metal extending from the first electrically conductive pad 28 to the outside of the support substrate 10 is the ninth metal layer 27, the metal extending from the second electrically conductive pad 29 to the outside of the support substrate 10 is the fourth metal layer 22, the metal extending from the first thermally conductive pad 30 to the outside of the support substrate 10 is the fifth metal layer 23, the metal extending from the second thermally conductive pad 31 to the outside of the support substrate 10 is the sixth metal layer 24, the metal extending from the third thermally conductive pad 32 to the outside of the support substrate 10 is the seventh metal layer 25, and the metal extending from the fourth thermally conductive pad 33 to the outside of the support substrate 10 is the eighth metal layer 26.
The film bulk acoustic wave filter comprises the film bulk acoustic resonator with good heat dissipation.
In the present invention, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless explicitly specified otherwise.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. A film bulk acoustic resonator with good heat dissipation is characterized by comprising a supporting substrate, a heat conduction layer, a first electrode layer, a piezoelectric layer, a second electrode layer and a passivation layer which are sequentially stacked, wherein the supporting substrate is provided with a first groove, the heat conduction layer is positioned on the surface of the supporting substrate where the first groove is located, and each surface in the first groove is covered by the heat conduction layer;
the first electrode layer comprises a first local electrode layer and a second local electrode layer which are separated from each other, the first local electrode layer is covered on the opening of the first groove to form a first cavity, and the second local electrode layer is electrically connected with the second electrode layer;
the first local electrode layer with the heat-conducting layer is connected with first electrically conductive pad, just first electrically conductive pad extends to outside the supporting substrate, the second local electrode layer with the heat-conducting layer is connected with the electrically conductive pad of second, just the electrically conductive pad of second extends to outside the supporting substrate, the heat-conducting layer is connected with the heat-conducting pad, just the heat-conducting pad extends to outside the supporting substrate.
2. The film bulk acoustic resonator with good heat dissipation of claim 1, wherein a sixth via hole extending to the first local electrode layer is formed in the supporting substrate, the first conductive pad fills the sixth via hole and extends out of the supporting substrate, a first via hole extending to the second local electrode layer is formed in the supporting substrate, and the second conductive pad fills the first via hole and extends out of the supporting substrate.
3. The film bulk acoustic resonator with good heat dissipation of claim 1, comprising four heat conducting pads, wherein the four heat conducting pads are a first heat conducting pad, a second heat conducting pad, a third heat conducting pad and a fourth heat conducting pad;
the support substrate is provided with a second through hole, a third through hole, a fourth through hole and a fifth through hole which extend to the heat conduction layer, the first heat conduction pad fills the second through hole and extends to the outside of the support substrate, the second heat conduction pad fills the third through hole and extends to the outside of the support substrate, the third heat conduction pad fills the fourth through hole and extends to the outside of the support substrate, and the fourth heat conduction pad fills the fifth through hole and extends to the outside of the support substrate.
4. The film bulk acoustic resonator with good heat dissipation of claim 3, wherein the portion of the first heat conduction pad extending to the outside of the supporting substrate, the portion of the second heat conduction pad extending to the outside of the supporting substrate, the portion of the third heat conduction pad extending to the outside of the supporting substrate, and the portion of the fourth heat conduction pad extending to the outside of the supporting substrate are connected.
5. The film bulk acoustic resonator with good heat dissipation of claim 1, wherein the passivation layer is disposed on the second electrode layer, and the second electrode layer is electrically connected to the second local electrode layer.
6. The film bulk acoustic resonator with good heat dissipation of any one of claims 1 to 5, further comprising a package cover plate provided with a second groove, wherein the piezoelectric layer is coated on an opening of the second groove to form a second cavity, and the passivation layer and the second electrode layer are both located in the second cavity and are both in non-contact with the package cover plate.
7. The film bulk acoustic resonator with good heat dissipation of any one of claims 1 to 5, wherein the heat conducting layer is made of diamond.
8. The film bulk acoustic resonator with good heat dissipation of any one of claims 1 to 5, wherein the first conductive pad and the second conductive pad are made of copper, tungsten, gold, titanium, aluminum or silver.
9. A method for manufacturing a film bulk acoustic resonator with good heat dissipation is characterized by comprising the following steps:
forming a first groove on a support substrate, forming a first blind hole, a second blind hole, a third blind hole, a fourth blind hole, a fifth blind hole and a sixth blind hole on the surface of the support substrate where an opening of the first groove is located, and filling metal in the first blind hole, the second blind hole, the third blind hole, the fourth blind hole, the fifth blind hole and the sixth blind hole;
preparing a heat conduction layer on the surface of the support substrate where the opening of the first groove is located, covering each surface in the first groove with the heat conduction layer, and filling a sacrificial material in the first groove covered with the heat conduction layer to obtain a sacrificial material layer;
removing a part of the heat conducting layer covering the opening of the first blind hole, exposing metal at the opening of the first blind hole, removing a part of the heat conducting layer covering the opening of the sixth blind hole, exposing metal at the opening of the sixth blind hole, preparing a first metal layer, covering the sacrificial material layer, the rest of the heat conducting layer, the metal at the opening of the first blind hole and the metal at the opening of the sixth blind hole on the first metal layer, and patterning the first metal layer to obtain a first electrode layer;
the first electrode layer comprises a first local electrode layer and a second local electrode layer which are separated from each other, the first local electrode layer is covered on the metal at the opening of the first groove and the metal at the opening of the sixth blind hole, and the second local electrode layer is covered on the metal at the opening of the first blind hole;
preparing a piezoelectric layer, wherein the piezoelectric layer covers the first partial electrode layer, the second partial electrode layer and the exposed part of the heat conduction layer;
sequentially preparing a second electrode layer and a passivation layer on the piezoelectric layer, wherein the passivation layer is covered on the second electrode layer;
electrically connecting the other end of the second electrode layer with the second local electrode layer;
removing the sacrificial material layer to obtain a first cavity;
preparing a packaging cover plate with a second groove, enabling the piezoelectric layer to cover the opening of the second groove to form a second cavity, wherein the passivation layer and the second electrode layer are both positioned in the second cavity, and the passivation layer and the second electrode layer are both in non-contact with the packaging cover plate;
thinning the back of the support substrate to expose the metal at the bottom of the first blind hole, the metal at the bottom of the second blind hole, the metal at the bottom of the third blind hole, the metal at the bottom of the fourth blind hole, the metal at the bottom of the fifth blind hole and the metal at the bottom of the sixth blind hole;
the preparation is used for covering and establishes the fourth metal level of the bottom of first blind hole obtains the second electrically conductive pad, and the preparation is used for covering and establishes the fifth metal level of the bottom of second blind hole obtains first heat conduction pad, and the preparation is used for covering and establishes the sixth metal level of the bottom of third blind hole obtains the second heat conduction pad, and the preparation is used for covering and establishes the seventh metal level of the bottom of fourth blind hole obtains the third heat conduction pad, and the preparation is used for covering and establishes the eighth metal level of the bottom of fifth blind hole obtains the fourth heat conduction pad, and the preparation is used for covering and establishes the ninth metal level of the bottom of sixth blind hole obtains first electrically conductive pad.
10. A thin film bulk acoustic filter comprising a thin film bulk acoustic resonator having excellent heat dissipation according to any one of claims 1 to 8.
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