CN115377305A - Oxide material, QLED and preparation method thereof - Google Patents
Oxide material, QLED and preparation method thereof Download PDFInfo
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- CN115377305A CN115377305A CN202111111226.5A CN202111111226A CN115377305A CN 115377305 A CN115377305 A CN 115377305A CN 202111111226 A CN202111111226 A CN 202111111226A CN 115377305 A CN115377305 A CN 115377305A
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Abstract
The invention provides an oxide material which is characterized by comprising a compound AYX 3 Wherein: a is Na or K, Y is V, nb or Ta, and X is O. The oxide material has the advantages of wide bandwidth, high conduction band and high electron mobility, and can ensure that the injection of device carriers is more balanced when being used as an electron transport layer of a QLED (quantum dot light emitting diode), thereby improving the performance of the device, particularly obviously improving the luminous efficiency of a blue light device, being more stable compared with the traditional electron transport layer and prolonging the service life of the device.
Description
Technical Field
The invention relates to the technical field of electroluminescence, in particular to an oxide material, a QLED and a preparation method thereof.
Background
In the current information age, terminal display devices become essential devices for people to transmit information, such as smart phones, displays, televisions, projectors and the like. With the continuous progress of technology, new and higher requirements are put on the devices. The advent of flat panel display technology has well met the needs of people, and Liquid Crystal Displays (LCDs) have been rapidly developed with their lightweight and low cost; an inorganic Light Emitting Diode (LED) is a p-n junction formed by epitaxially growing an inorganic semiconductor crystal, and has the characteristics of high brightness, high efficiency, high stability and the like; the later developed oled display technology is considered as the biggest challenger of LCDs, and as one of LEDs, OLEDs have advantages of high light utilization efficiency, low power consumption, richer colors, and the like, and meanwhile, compared with LCDs, the OLEDs have higher efficiency, simpler structure, wider visual sense, and faster speed, and are widely used for small-area intelligent terminal display at present. Therefore, it is urgent to develop a new display technology with better performance, and the Quantum Dot Light Emitting diode (QLED) technology can solve the above problems.
Quantum Dots (Quantum Dots) are nanocrystals with a radius smaller or close to the exciton Bohr radius, typically with a particle size between 1nm and 20 nm. The size of the material is smaller than the radius of the bulk material Bohr exciton, so that the material shows strong quantum confinement effect, the energy band of the material is changed into a discrete energy level structure, and a plurality of new photoelectric characteristics are presented. Quantum dots applied to the display field are generally of a core-shell structure, the movement of internal holes and electrons in all directions is limited, and the surface is generally passivated by a ligand. The quantum dot light wavelength can be adjusted by controlling the particle size, so that the quantum dot light wavelength has the advantages of narrow light emission spectrum line width, high color purity, high electron mobility and good light stability, can be used for flexible display and the like, and is widely applied to the field of light emission display.
The first quantum dot light emitting diode (QLED) was prepared in 1994, and through the development of more than 20 years, the mechanisms of material synthesis, device preparation and light emission are greatly improved, but problems still exist: in terms of electron transport layers, inorganic semiconductors are conventionally and generally used as electron transport layers, and among them, znO materials, which are excellent in red and green QLED devices but have poor performance in blue QLED devices, are most commonly used. At present, an electron transport layer of a commonly used blue light QLED device needs to have high mobility and a high conduction band, and the traditional electron transport layer material cannot meet the requirements, so that the current carrier is unbalanced, the luminous efficiency of the device is poor, and the service life of the device is short.
Disclosure of Invention
Based on the oxide material, the invention provides the oxide material which can obviously improve the luminous efficiency and the service life of the blue light quantum dot luminescent device.
The invention is realized by the following technical scheme.
An oxide material applied to an electron transport layer of a QLED, wherein the oxide material comprises a compound AYX 3 Wherein: a is Na or K, Y is V, nb or Ta, and X is O.
In one embodiment, the oxide material is formed from compound AYX 3 And (4) forming.
In one embodiment, the oxide material comprises NaTaO 3 、NaVO 3 、NaNbO 3 、KVO 3 、KTaO 3 With KNbO 3 At least one of (1).
In one embodiment, the oxide material is made of NaTaO 3 And KTaO 3 At least one of (1).
In one embodiment, the compound AYX 3 The particle diameter of the nano particles is 2 to 15 nanometers.
The invention also provides a QLED, which comprises an anode, a quantum dot light-emitting layer, an electron transmission layer and a cathode which are sequentially stacked;
wherein the electron transport layer contains the oxide material as described above.
In one embodiment, the quantum dot light emitting layer is a blue light quantum dot light emitting layer; and/or
The material forming the quantum dot light emitting layer includes: at least one of a II-VI compound semiconductor and a perovskite quantum dot.
In one embodiment, the material forming the cathode comprises: at least one of ITO, IZO, IGZO, ag, mg and Al; and/or
The material forming the anode includes: at least one of ITO, IZO, IGZO, ag, au and Al.
The invention also provides a preparation method of the oxide, which comprises the following steps:
sequentially laminating an anode, a quantum dot light-emitting layer, an electron transmission layer and a cathode on a substrate; or, sequentially laminating a cathode, an electron transport layer, a quantum dot light emitting layer and an anode on the substrate;
wherein the electron transport layer contains the oxide material as described above.
In one embodiment, the electron transport layer is formed by:
mixing the nano particles of the oxide material with a solvent, preparing a film by a solution method, and annealing.
In one embodiment, the nanoparticles of the oxide material have a particle size of 2 to 15 nanometers; and/or
The annealing temperature is 80-150 ℃; and/or
The solution method comprises spin coating, blade coating or ink-jet printing; and/or
The solvent is at least one selected from ethanol, isopropanol and butanol.
Compared with the prior art, the oxide material has the following beneficial effects:
the oxide material has the advantages of fewer defects, higher stability, wider bandwidth, higher conduction band and higher electron mobility, improves electron injection, can ensure that the injection of current carriers of a device is more balanced when being used as an electron transmission layer of a QLED (quantum dot light emitting diode), thereby improving the performance of the device, particularly obviously improving the luminous efficiency of a blue light device, and simultaneously being more stable compared with the traditional electron transmission layer and prolonging the service life of the device.
Drawings
Fig. 1 is a schematic structural diagram of a QLED device according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of a QLED manufacturing method provided by the present invention;
FIG. 3 is a schematic flow chart of a QLED manufacturing method provided by the present invention;
description of the reference numerals:
101: a substrate; 102: an anode; 103: a hole injection layer; 104: a hole transport layer; 105: a quantum dot light emitting layer; 106: an electron transport layer; 107: and a cathode.
Detailed Description
In order that the invention may be more fully understood, reference will now be made to the accompanying examples. The preferred embodiments of the present invention are given in the examples. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
The elements referred to in the radicals and compounds of the invention include their isotopes, and the elements referred to in the compounds of the invention are optionally further replaced by one or more of their corresponding isotopes, wherein the isotopes of oxygen include 16 O、 17 O and 18 O。
furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the invention, "a plurality" means at least two, e.g., two, three, etc., unless explicitly specified otherwise. In the description of the present invention, "a plurality" means at least one, e.g., one, two, etc., unless specifically limited otherwise.
The words "preferably," "more preferably," and the like, in the context of the present invention, refer to embodiments of the invention that may, in some instances, provide certain benefits. However, other embodiments may be preferred, under the same or other circumstances. Furthermore, the recitation of one or more preferred embodiments does not imply that other embodiments are not useful, and is not intended to exclude other embodiments from the scope of the invention.
When a range of values is disclosed herein, the range is considered to be continuous and includes both the minimum and maximum values of the range, as well as each value between such minimum and maximum values. Further, when a range refers to an integer, each integer between the minimum and maximum values of the range is included. Further, when multiple range-describing features or characteristics are provided, the ranges may be combined. In other words, unless otherwise indicated, all ranges disclosed herein are to be understood to encompass any and all subranges subsumed therein.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The invention provides an oxide material applied to a QLED electron transport layer, which comprises a compound AYX 3 Wherein: a is Na or K, Y is V, nb or Ta, and X is O.
The above composition comprises AYX 3 The oxide material can obviously improve the performance of the device when being used as an electron transmission layer, and particularly can achieve the purpose of improving the carrier mobility and stability of the electron transmission layer of a blue light QLED device, so that the carriers of the device are more balanced, and the efficiency is improved.
In one particular example, the oxide material is represented by compound AYX 3 And (4) forming.
In one particular example, the oxide material includes NaTaO 3 、NaVO 3 、NaNbO 3 、KVO 3 、KTaO 3 With KNbO 3 At least one of (a). Further, the oxide material is made of NaTaO 3 、NaVO 3 、NaNbO 3 、KVO 3 、KTaO 3 With KNbO 3 At least one of (1).
In one particular example, the oxide material includes NaTaO 3 And KTaO 3 At least one of (1). Further, the oxide material is made of NaTaO 3 And KTaO 3 At least one of (a).
More specifically, the oxide material includes NaTaO 3 . Further, the oxide material is made of NaTaO 3 And (4) forming.
More specifically, the oxide material includes KTaO 3 . Further, the oxide material is made of KTaO 3 And (4) forming.
More specifically, the oxide material includes NaTaO 3 And KTaO 3 A mixture of (a). Further, the oxide material is made of NaTaO 3 And KTaO 3 The composition of the mixture.
In one specific example, compound AYX 3 The particle diameter of the nano particles is 2 to 15 nanometers. Understandably, in the present invention, compound AYX 3 The particle size of the nanoparticles of (a) includes, but is not limited to, 2nm, 3 nm, 4 nm, 5nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm.
The invention also provides a QLED, which comprises an anode, a quantum dot light-emitting layer, an electron transmission layer and a cathode which are sequentially stacked; wherein the electron transport layer contains the QLED electron transport material.
More specifically, a hole function layer may be disposed between the anode and the quantum dot light emitting layer, and the hole function layer includes at least one of a hole injection layer and a hole transport layer.
It is to be understood that in the present invention, the hole injection layer is provided on the anode, the hole transport layer is provided on the hole injection layer, the light-emitting layer is provided on the hole transport layer, the electron transport layer is provided on the light-emitting layer, and the cathode is provided on the electron transport layer.
It is understood that in the present invention, the QLED includes a forward device or an inverted device, and is not limited to top emission or bottom emission.
It is understood that in the present invention, the light emitting layer is a quantum dot light emitting layer.
The quantum dots in the quantum dot light emitting layer may be group II-VI compound semiconductors such as: cdSe, znCdS, cdSeS, znCdSeS, cdSe/ZnS, cdSeS/ZnS, cdSe/CdS/ZnS, znCdS/ZnS, cdS/ZnS, znCdSeS/ZnS, etc.; may be perovskite quantum dots.
It is to be understood that in the present invention, the hole transport layer may be an organic hole transport layer, such as: poly-TPD, TFB, PVK, TCTA, CBP, NPB, NPD, etc.; or an inorganic hole transport layer, e.g. NiO, cu 2 O, cuSCN, and the like.
It is to be understood that in the present invention, the hole injection layer may be a conductive polymer such as: PEDOT: PSS; it may also be a high work function n-type semiconductor, such as: HAT-CN, moO 3 、WO 3 、V 2 O 5 、Rb 2 O, and the like.
In one particular example, the quantum dot light emitting layer is a blue quantum dot light emitting layer.
In one particular example, the material forming the cathode includes: at least one of ITO, IZO, IGZO, ag, mg and Al.
In one particular example, the material forming the anode comprises: at least one of ITO, IZO, IGZO, ag, au and Al.
The invention also provides a preparation method of the QLED, which comprises the following steps:
as shown in fig. 2, an anode, a quantum dot light emitting layer, an electron transport layer, and a cathode are sequentially stacked on a substrate; or
Referring to fig. 3, a cathode, an electron transport layer, a quantum dot light emitting layer, and an anode are sequentially stacked on a substrate;
wherein the electron transport layer contains the oxide material. Specifically, the material forming the electron transporting layer includes the above-described oxide material; specifically, the raw material for forming the electron transport layer is the oxide material; more specifically, the electron transport layer is composed of the above-described oxide material.
More specifically, the preparation method of the QLED includes the following steps:
sequentially laminating an anode, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a cathode on a substrate; alternatively, a cathode, an electron transport layer, a quantum dot light emitting layer, a hole transport layer, a hole injection layer, and an anode are sequentially stacked on a substrate.
In one specific example, the electron transport layer is formed by:
mixing the nano particles of the oxide material with a solvent, preparing a film by a solution method, and annealing.
In a specific example, the nanoparticles of the oxide material have a particle size of 2 nanometers to 15 nanometers. It is understood that in the present invention, the particle size of the nanoparticles of the oxide material includes, but is not limited to, 2nm, 3 nm, 4 nm, 5nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm.
In one specific example, the annealing temperature is between 80 degrees Celsius and 150 degrees Celsius. It will be appreciated that, in the present invention, annealing temperatures include, but are not limited to, 80 degrees Celsius, 81 degrees Celsius, 82 degrees Celsius, 83 degrees Celsius, 84 degrees Celsius, 85 degrees Celsius, 86 degrees Celsius, 87 degrees Celsius, 88 degrees Celsius, 89 degrees Celsius, 90 degrees Celsius, 91 degrees Celsius, 92 degrees Celsius, 93 degrees Celsius, 94 degrees Celsius, 95 degrees Celsius, 96 degrees Celsius, 97 degrees Celsius, 98 degrees Celsius, 99 degrees Celsius, 100 degrees Celsius, 101 degrees Celsius, 102 degrees Celsius, 103 degrees Celsius, 104 degrees Celsius, 105 degrees Celsius, 106 degrees Celsius, 107 degrees Celsius, 108 degrees Celsius, 109 degrees Celsius, 110 degrees Celsius, 111 degrees Celsius, 112 degrees Celsius, 113 degrees Celsius, 114 degrees Celsius, 111 degrees Celsius, 112 degrees Celsius, 113 degrees Celsius, and 106 degrees Celsius 115 degrees celsius, 116 degrees celsius, 117 degrees celsius, 118 degrees celsius, 119 degrees celsius, 120 degrees celsius, 121 degrees celsius, 122 degrees celsius, 123 degrees celsius, 124 degrees celsius, 125 degrees celsius, 126 degrees celsius, 127 degrees celsius, 128 degrees celsius, 129 degrees celsius, 130 degrees celsius, 131 degrees celsius, 132 degrees celsius, 133 degrees celsius, 134 degrees celsius, 135 degrees celsius, 136 degrees celsius, 137 degrees celsius, 138 degrees celsius, 139 degrees celsius, 140 degrees celsius, 141 degrees celsius, 142 degrees celsius, 143 degrees celsius, 144 degrees celsius, 145 degrees celsius, 146 degrees celsius, 147 degrees celsius, 148 degrees celsius, 149 degrees celsius, 150 degrees celsius.
It is to be understood that in the present invention, the solution process includes, but is not limited to, ink-jet printing, dip coating, spin coating, blade coating, spray coating, brush coating or pad coating, slit die coating, and the like.
In one specific example, the solution process includes spin coating, doctor blading, or ink jet printing.
In a specific example, the solvent is selected from at least one of ethanol, isopropanol, and butanol.
In a more specific example, the electron transport layer is formed by:
firstly, AYX is prepared by a hydrothermal method 3 The diameter of the nano particles of the material is 2-15 nanometers, then the nano particles are dissolved in solvents such as ethanol, isopropanol or butanol, the film is formed by solution methods such as spin coating, blade coating, ink-jet printing and the like, and finally the electronic transmission layer is formed by annealing, wherein the annealing temperature is 80-150 ℃.
In a more specific example, a method of making a QLED includes the steps of:
the method comprises the following steps: the glass substrate with the ITO is sequentially placed in a detergent, deionized water, acetone, ethanol and deionized water for 10-20 minutes each time, and then dried at 90-110 ℃.
Step two: PSS (PEDOT-shaped gold nanoparticles) with the size of 25 nanometers is coated on the ITO substrate in a spin mode, and annealing is carried out for 13-18 minutes in the air at the temperature of 140-160 ℃.
Step three: and transferring the substrate obtained in the step two into a glove box, obtaining a TFB film of 2 nanometers by a spin coating method, and annealing at the temperature of 140-160 ℃ for 25-35 minutes.
Step four: and spin-coating a QD layer on the wafer after the third step, wherein the thickness of the QD layer is 15 nanometers, the annealing temperature is 90-110 ℃, and the time is 8-12 minutes, wherein the quantum dots are CdSe/ZnS core-shell structure blue quantum dots, and the quantum dots are dispersed in an n-octane solvent.
Step five: spin-coating a layer of AYX on the sheet after step four 3 ，AYX 3 The thickness of the layer is 30nm, the annealing temperature is 80-150 ℃, and the time is 8-12 minutes.
Step six: and transferring the sheet obtained in the fifth step into an evaporation machine, and evaporating 100nm of Ag.
The invention also relates to the use of QLEDs according to the invention in various electronic devices, including but not limited to display devices, lighting devices, light sources, sensors, etc.
The present invention also relates to electronic devices including, but not limited to, display devices, lighting devices, light sources, sensors, etc., incorporating QLEDs according to the present invention.
The oxide material, the QLED, and the method for manufacturing the QLED of the present invention will be described in further detail with reference to specific examples. The starting materials used in the following examples are all commercially available products unless otherwise specified.
Example 1
The embodiment provides a preparation method of a QLED, which includes the following specific steps:
the method comprises the following steps: and sequentially placing the glass substrate with the ITO into a detergent, deionized water, acetone, ethanol and deionized water, performing ultrasonic treatment for 15min each time, and drying at 100 ℃.
Step two: PSS (PEDOT) with the wavelength of 25nm is spin-coated on an ITO substrate, and the ITO substrate is annealed for 15min at the temperature of 150 ℃ in air.
Step three: and transferring the substrate obtained in the second step into a glove box, obtaining a TFB film with the thickness of 2nm by a spin coating method, and annealing at 150 ℃ for 30min.
Step four: and spin-coating a QD layer on the wafer after the third step, wherein the thickness of the QD layer is 15nm, the annealing temperature is 100 ℃, and the time is 10min, wherein the quantum dots are CdSe/ZnS core-shell structure blue quantum dots, and the quantum dots are dispersed in an n-octane solvent.
Step five: spin-coating a layer of NaTaO on the wafer after the fourth step 3 ，NaTaO 3 The layer thickness is 30nm, the annealing temperature is 100 ℃, and the time is 10min.
Step six: and transferring the sheet obtained in the fifth step into an evaporation machine, and evaporating 100nm of Ag.
The schematic structural diagram of the prepared QLED device is shown in FIG. 1.
Example 2
The embodiment provides a preparation method of a QLED, which includes the following steps:
the method comprises the following steps: the glass substrate with the ITO is sequentially placed in a detergent, deionized water, acetone, ethanol and deionized water for 15min each time, and then dried at 100 ℃.
Step two: PSS (PEDOT) with the wavelength of 25nm is spin-coated on an ITO substrate, and the ITO substrate is annealed for 15min at the temperature of 150 ℃ in air.
Step three: and transferring the substrate obtained in the second step into a glove box, obtaining a TFB film with the thickness of 2nm by a spin coating method, and annealing at 150 ℃ for 30min.
Step four: and spin-coating a QD layer on the wafer after the third step, wherein the thickness of the QD layer is 15nm, the annealing temperature is 100 ℃, and the time is 10min, wherein the quantum dots are CdSe/ZnS core-shell structure blue quantum dots, and the quantum dots are dispersed in an n-octane solvent.
Step five: spin-coating a layer of KNbO on the wafer after the fourth step 3 ，KNbO 3 The layer thickness is 30nm, the annealing temperature is 100 ℃, and the time is 10min.
Step six: and transferring the sheet obtained in the fifth step into an evaporation machine, and evaporating 100nm of Ag.
Example 3
The embodiment provides a preparation method of a QLED, which includes the following specific steps:
the method comprises the following steps: and sequentially placing the glass substrate with the ITO into a detergent, deionized water, acetone, ethanol and deionized water, performing ultrasonic treatment for 15min each time, and drying at 100 ℃.
Step two: PSS (PEDOT) with the wavelength of 25nm is spin-coated on an ITO substrate, and the ITO substrate is annealed for 15min at the temperature of 150 ℃ in air.
Step three: and transferring the substrate obtained in the second step into a glove box, obtaining a TFB film with the thickness of 2nm by a spin coating method, and annealing at 150 ℃ for 30min.
Step four: and spin-coating a QD layer on the wafer after the third step, wherein the thickness of the QD layer is 15nm, the annealing temperature is 100 ℃, and the time is 10min, wherein the quantum dots are CdSe/ZnS core-shell structure blue quantum dots, and the quantum dots are dispersed in an n-octane solvent.
Step five: spin-coating a layer of KVO on the wafer after the fourth step 3 ，KVO 3 The layer thickness is 30nm, the annealing temperature is 100 ℃, and the time is 10min.
Step six: and transferring the sheet obtained in the fifth step into an evaporation machine, and evaporating 100nm of Ag.
Example 4
The embodiment provides a preparation method of a QLED, which includes the following steps:
the method comprises the following steps: and sequentially placing the glass substrate with the ITO into a detergent, deionized water, acetone, ethanol and deionized water, performing ultrasonic treatment for 15min each time, and drying at 100 ℃.
Step two: PSS (PEDOT: PSS) with the wavelength of 25nm is spin-coated on an ITO substrate and is annealed for 15min at the temperature of 150 ℃ in the air.
Step three: and transferring the substrate obtained in the second step into a glove box, obtaining a TFB film with the thickness of 2nm by a spin coating method, and annealing at 150 ℃ for 30min.
Step four: and spin-coating a QD layer on the wafer after the third step, wherein the thickness of the QD layer is 15nm, the annealing temperature is 100 ℃, and the annealing time is 10min, wherein the quantum dots are CdSe/ZnS core-shell structure blue quantum dots, and the quantum dots are dispersed in an n-octane solvent.
Step five: spin coating a layer of KTaO on the sheet after the fourth step 3 ，KTaO 3 The layer thickness is 30nm, the annealing temperature is 100 ℃, and the time is 10min.
Step six: and transferring the sheet obtained in the fifth step into an evaporation machine, and evaporating 100nm of Ag.
Comparative example 1
The comparative example provides a preparation method of a QLED, which comprises the following specific steps:
the method comprises the following steps: and sequentially placing the glass substrate with the ITO into a detergent, deionized water, acetone, ethanol and deionized water, performing ultrasonic treatment for 15min each time, and drying at 100 ℃.
Step two: PSS (PEDOT) with the wavelength of 25nm is spin-coated on an ITO substrate, and the ITO substrate is annealed for 15min at the temperature of 150 ℃ in air.
Step three: and transferring the substrate obtained in the second step into a glove box, obtaining a TFB film with the thickness of 2nm by a spin coating method, and annealing at 150 ℃ for 30min.
Step four: and spin-coating a QD layer on the wafer after the third step, wherein the thickness of the QD layer is 15nm, the annealing temperature is 100 ℃, and the time is 10min, wherein the quantum dots are CdSe/ZnS core-shell structure blue quantum dots, and the quantum dots are dispersed in an n-octane solvent.
Step five: and spin-coating a layer of ZnO on the wafer after the fourth step, wherein the thickness of the ZnO layer is 30nm, the annealing temperature is 100 ℃, and the time is 10min.
Step six: and transferring the sheet obtained in the fifth step into an evaporation machine, and evaporating 100nm of Ag.
Performance test
The QLEDs prepared in examples 1-4 and comparative example 1 were tested for efficiency and lifetime (CE @1000nit (cd/A), T95@1000nit (h)) and the results are shown in Table 1:
TABLE 1
As shown in Table 1, the compound NaTaO 3 、KNbO 3 、KVO 3 、KTaO 3 The efficiency and the service life of the blue light QLED device applied to the electron transport layer are superior to those of ZnO used as the electron transport layer, because the compound AYX 3 Has higher conduction band, higher electron mobility and better stability. Wherein, naTaO 3 And KTaO 3 The blue QLED device applied to the electron transport layer performed best.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, so as to understand the technical solutions of the present invention specifically and in detail, but not to be understood as the limitation of the protection scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. It should be understood that the technical solutions provided by the present invention, which are obtained by logical analysis, reasoning or limited experiments, are within the scope of the appended claims. Therefore, the protection scope of the patent of the invention is subject to the content of the appended claims, and the description can be used for explaining the content of the claims.
Claims (11)
1. The oxide material is applied to an electron transport layer of a QLED (quantum dot light emitting diode), and is characterized by comprising a compound AYX 3 Wherein: a is Na or K, Y is V, nb or Ta, and X is O.
2. Oxide material according to claim 1, characterized in that it is made of compound AYX 3 And (4) forming.
3. The oxide material of claim 1, wherein the oxide material comprises NaTaO 3 、NaVO 3 、NaNbO 3 、KVO 3 、KTaO 3 With KNbO 3 At least one of (1).
4. The oxide material of claim 3, wherein the oxide material is formed from NaTaO 3 And KTaO 3 At least one of (1).
5. The oxide material of claim 1, wherein the compound AYX 3 The particle diameter of the nano particles is 2 to 15 nanometers.
6. A QLED is characterized by comprising an anode, a quantum dot light-emitting layer, an electron transmission layer and a cathode which are sequentially stacked;
wherein the electron transport layer contains the oxide material according to any one of claims 1 to 5.
7. The QLED of claim 6, wherein the quantum dot light emitting layer is a blue quantum dot light emitting layer; and/or
The material for forming the quantum dot light emitting layer comprises: at least one of a II-VI compound semiconductor and a perovskite quantum dot.
8. A QLED according to claim 6 wherein the material forming the cathode comprises: at least one of ITO, IZO, IGZO, ag, mg and Al; and/or
The material forming the anode includes: at least one of ITO, IZO, IGZO, ag, au and Al.
9. A preparation method of a QLED is characterized by comprising the following steps:
sequentially laminating an anode, a quantum dot light-emitting layer, an electron transmission layer and a cathode on a substrate; or, sequentially laminating a cathode, an electron transport layer, a quantum dot light emitting layer and an anode on the substrate;
wherein the electron transport layer contains the oxide material according to any one of claims 1 to 5.
10. A method of making a QLED of claim 9, wherein the electron transport layer is formed by:
mixing the nano particles of the oxide material with a solvent, preparing a film by a solution method, and annealing.
11. A method of manufacturing a QLED as recited in claim 10, wherein the nanoparticles of the oxide material have a particle size of 2nm to 15 nm; and/or
The annealing temperature is 80-150 ℃; and/or
The solution method comprises spin coating, blade coating or ink-jet printing; and/or
The solvent is at least one selected from ethanol, isopropanol and butanol.
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