CN115318717A - Method for removing residual glue on heating plate PI of baking unit - Google Patents
Method for removing residual glue on heating plate PI of baking unit Download PDFInfo
- Publication number
- CN115318717A CN115318717A CN202210935065.XA CN202210935065A CN115318717A CN 115318717 A CN115318717 A CN 115318717A CN 202210935065 A CN202210935065 A CN 202210935065A CN 115318717 A CN115318717 A CN 115318717A
- Authority
- CN
- China
- Prior art keywords
- heating plate
- baking unit
- dimethyl sulfoxide
- sulfoxide solvent
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a method for removing residual glue of a heating plate PI of a baking unit. The method for removing residual glue on the heating plate PI of the baking unit comprises the following steps: arranging a heating plate of the baking unit with the PI adhesive residues in a cleaning area; soaking the surface of the heating plate of the baking unit in a dimethyl sulfoxide solvent at 60-80 ℃ to dissolve PI residual glue on the surface of the heating plate of the baking unit in the dimethyl sulfoxide solvent; and cleaning the heating plate of the baking unit to remove the dimethyl sulfoxide solvent dissolved with the PI adhesive residues. The application provides a get rid of method of toasting unit hot plate PI cull can solve and toast the unit hot plate on PI glue residue serious problem among the correlation technique.
Description
Technical Field
The application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a method for removing PI (polyimide) residual glue of a heating plate of a baking unit.
Background
The PI (Polyimide) film has wide application in the fields of semiconductors and microelectronics industry, and can be used as a particle shielding film, a passivation layer, a buffer inner coating of an integrated circuit device and an interlayer dielectric layer of a multilayer metal interconnection circuit.
The PI film process in the related technology mainly comprises the following steps: and (4) gluing and baking for heat curing. However, in the related art, after the wafer is subjected to the glue coating operation, PI glue remains at the edge of the wafer, and further, when the wafer with the PI film is baked by the baking unit in the subsequent process, the PI glue remaining at the edge of the wafer flows to the back of the wafer to contaminate the heating plate of the baking unit. With the accumulated baking operation, PI glue remains on the heating plate of the baking unit seriously, which may cause adverse effect on the wafers in the subsequent operation.
Disclosure of Invention
The application provides a method for removing PI (polyimide) glue residues on a heating plate of a baking unit, which can solve the problem of serious PI glue residues on the heating plate of the baking unit in the related art.
In order to solve the technical problem in the background art, the present application provides a method for removing residual glue from a heating plate PI of a baking unit, where the method for removing residual glue from the heating plate PI of the baking unit includes:
arranging a heating plate of the baking unit with the PI adhesive residues in a cleaning area;
soaking the surface of the heating plate of the baking unit in a dimethyl sulfoxide solvent at 60-80 ℃ to dissolve PI residual glue on the surface of the heating plate of the baking unit in the dimethyl sulfoxide solvent;
cleaning the heating plate of the baking unit to remove the dimethyl sulfoxide solvent dissolved with the PI residual glue.
Optionally, the step of immersing the surface of the heating plate of the baking unit in a dimethyl sulfoxide solvent at a temperature between 60 ℃ and 80 ℃ so that the PI cull on the surface of the heating plate of the baking unit is dissolved in the dimethyl sulfoxide solvent comprises:
and soaking the surface of the heating plate of the baking unit in a dimethyl sulfoxide solvent at the temperature of between 60 and 80 ℃ for 5 to 7 hours, so that the PI residual glue on the surface of the heating plate of the baking unit is dissolved in the dimethyl sulfoxide solvent.
Optionally, the step of cleaning the baking unit heating plate to remove the dimethyl sulfoxide solvent dissolved with the PI cull comprises:
spraying deionized water on the surface of the heating plate of the baking unit to remove the dimethyl sulfoxide solvent dissolved with the PI residual glue;
and drying the heating plate of the baking unit.
Optionally, the step of cleaning the baking unit heating plate to remove the dimethyl sulfoxide solvent dissolved with the PI cull comprises:
wiping off the heating plate of the baking unit, and dissolving the dimethyl sulfoxide solvent with the PI residual glue.
The step of soaking the surface of the heating plate of the baking unit in a dimethyl sulfoxide solvent at 60-80 ℃ to dissolve the PI adhesive residues on the surface of the heating plate of the baking unit in the dimethyl sulfoxide solvent comprises the following steps:
heating dimethyl sulfoxide solvent to 60-80 deg.C;
and covering the heated dimethyl sulfoxide solvent on the surface of the heating plate of the baking unit, so that PI residual glue on the surface of the heating plate of the baking unit is dissolved in the dimethyl sulfoxide solvent.
The technical scheme at least comprises the following advantages: the heating plate of the baking unit with the PI residual glue is arranged in the cleaning area, the surface of the heating plate of the baking unit is soaked in a dimethyl sulfoxide solvent between 60 ℃ and 80 ℃, the PI residual glue on the surface of the heating plate of the baking unit is dissolved in the dimethyl sulfoxide solvent, and the heating plate of the baking unit is cleaned again to remove the dimethyl sulfoxide solvent dissolved with the PI residual glue, so that the PI glue residue on the heating plate of the baking unit can be thoroughly and clearly left, and the adverse effect of the residual PI glue on a wafer in subsequent operation due to accumulated baking operation is avoided.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart illustrating a method for removing residual glue on a heating plate PI of a baking unit according to an embodiment of the present application;
fig. 2 shows a position diagram in the solubility coordinate system of PI cull and dimethyl sulfoxide (DMSO) solvent.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be connected through the inside of the two elements, or may be connected wirelessly or through a wire. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Fig. 1 shows a flowchart of a method for removing residual glue from a heating plate PI of a baking unit according to an embodiment of the present application, and as can be seen from fig. 1, the method for removing residual glue from the heating plate PI of the baking unit includes the following steps:
step S1: and arranging a heating plate of the baking unit with the PI adhesive residues in a cleaning area.
Step S2: heating the dimethyl sulfoxide solvent to 60-80 ℃, and then covering the heated solvent on the surface of the heating plate of the baking unit to dissolve the PI residual glue on the surface of the heating plate of the baking unit in the dimethyl sulfoxide solvent.
It is understood that the parameters affecting the solubility of the polymer in the solvent are the dispersion force, polarity, hydrogen bonding and interaction radius, respectively.
Referring to fig. 2, a graph of the position in the solubility coordinate system of PI cull and dimethyl sulfoxide (DMSO) solvent is shown. From the solubility coordinate system in fig. 2 comprising a first coordinate axis, a second coordinate axis and a third coordinate axis, wherein the first coordinate axis represents Dispersion force D (Dispersion), the second coordinate axis represents Polar P (Polar), the third coordinate axis represents hydrogen bond H (H-bonding), R in the figure represents the interaction radius of PI cullet, the DMSO position in the solubility coordinate system is exemplarily: d =18.4p =16.4h =10.2; the positions of the PI cull in the solubility coordinate system are as follows: d =16.8p =10.5h =7.2, so that it can be seen that the PI remnant is located inside the DMSO in the solubility coordinate system, so that the PI remnant is readily soluble in the DMSO solvent.
The step S2 is to soak the surface of the heating plate of the baking unit in a dimethyl sulfoxide solvent at a temperature of 60 ℃ to 80 ℃ by using the characteristic that the PI cull is easily soluble in the DMSO solvent, so that the PI cull on the surface of the heating plate of the baking unit is dissolved in the dimethyl sulfoxide solvent.
Alternatively, the surface of the heating plate of the baking unit may be soaked in a dimethylsulfoxide solvent at 60 ℃ to 80 ℃ for 5 hours to 7 hours so that PI cull on the surface of the heating plate of the baking unit is dissolved in the dimethylsulfoxide solvent.
When the surface of the heating plate of the baking unit is soaked in the dimethyl sulfoxide solvent at 70 ℃ for 6 hours, the effect that the PI adhesive residues on the surface of the heating plate of the baking unit are dissolved in the dimethyl sulfoxide solvent is good.
And step S3: and cleaning the heating plate of the baking unit to remove the dimethyl sulfoxide solvent dissolved with the PI adhesive residues.
In the step S3, deionized water may be sprayed onto the surface of the heating plate of the baking unit to remove the dimethyl sulfoxide solvent in which the PI residual glue is dissolved; the baking unit hot plate is then dried.
The cleaning area is located through the unit hot plate that toasts that will have the PI cull to this embodiment, will the surface of toasting the unit hot plate soaks in the dimethyl sulfoxide solvent between 60 ℃ to 80 ℃, makes the PI cull on the unit hot plate surface of toasting dissolves in the dimethyl sulfoxide solvent, cleans again toast the unit hot plate in order to get rid of the dimethyl sulfoxide solvent that has the PI cull, can thoroughly clearly toast the PI on the unit hot plate and glue and remain, avoid because the operation of toasting of accumulation, remaining PI glues and causes adverse effect to the wafer of follow-up operation.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. This need not be, nor should it be exhaustive of all embodiments. And obvious variations or modifications of the invention are intended to be covered by the present invention.
Claims (5)
1. The method for removing the residual glue on the heating plate PI of the baking unit is characterized by comprising the following steps of:
arranging a heating plate of the baking unit with the PI adhesive residues in a cleaning area;
soaking the surface of the heating plate of the baking unit in a dimethyl sulfoxide solvent at the temperature of between 60 and 80 ℃ to dissolve PI residual glue on the surface of the heating plate of the baking unit in the dimethyl sulfoxide solvent;
cleaning the heating plate of the baking unit to remove the dimethyl sulfoxide solvent dissolved with the PI residual glue.
2. The method for removing PI cull from a baking unit heater plate of claim 1, wherein the step of immersing the surface of the baking unit heater plate in a dmso solvent at a temperature between 60 ℃ and 80 ℃ to dissolve the PI cull from the surface of the baking unit heater plate in the dmso solvent comprises:
and soaking the surface of the heating plate of the baking unit in a dimethyl sulfoxide solvent at the temperature of between 60 and 80 ℃ for 5 to 7 hours, so that the PI residual glue on the surface of the heating plate of the baking unit is dissolved in the dimethyl sulfoxide solvent.
3. The method of claim 1, wherein the step of cleaning the bake unit hotplate to remove the dimethylsulfoxide solvent with dissolved PI cull comprises:
spraying deionized water on the surface of the heating plate of the baking unit to remove the dimethyl sulfoxide solvent dissolved with the PI residual glue;
and drying the heating plate of the baking unit.
4. The method of claim 1, wherein the step of cleaning the bake unit hotplate to remove the dimethyl sulfoxide solvent with dissolved PI cull comprises:
wiping to remove the dimethyl sulfoxide solvent dissolved with PI residual glue on the heating plate of the baking unit.
5. The method for removing PI residues on a hot plate of a bake unit as recited in claim 1 wherein said step of immersing the surface of said hot plate of said bake unit in a dimethylsulfoxide solvent at a temperature between 60 ℃ and 80 ℃ such that PI residues on the surface of said hot plate of said bake unit are dissolved in said dimethylsulfoxide solvent comprises:
heating the dimethyl sulfoxide solvent to 60-80 ℃;
and covering the heated dimethyl sulfoxide solvent on the surface of the heating plate of the baking unit, so that PI (polyimide) residual glue on the surface of the heating plate of the baking unit is dissolved in the dimethyl sulfoxide solvent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210935065.XA CN115318717A (en) | 2022-08-05 | 2022-08-05 | Method for removing residual glue on heating plate PI of baking unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210935065.XA CN115318717A (en) | 2022-08-05 | 2022-08-05 | Method for removing residual glue on heating plate PI of baking unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115318717A true CN115318717A (en) | 2022-11-11 |
Family
ID=83921710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210935065.XA Pending CN115318717A (en) | 2022-08-05 | 2022-08-05 | Method for removing residual glue on heating plate PI of baking unit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115318717A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102096345A (en) * | 2009-12-11 | 2011-06-15 | 安集微电子（上海）有限公司 | Thick-film photoresist cleaning solution and cleaning method thereof |
| CN102944986A (en) * | 2012-11-13 | 2013-02-27 | 大连三达维芯半导体材料有限公司 | Polyimide stripping liquid for chips and preparation method of polyimide stripping liquid |
| CN110727182A (en) * | 2019-10-31 | 2020-01-24 | 湖北兴福电子材料有限公司 | Method for stripping photoresist |
| CN111073035A (en) * | 2019-12-12 | 2020-04-28 | 江苏奥神新材料股份有限公司 | Method for rapidly degrading and recycling polyimide material |
| CN113441426A (en) * | 2020-03-24 | 2021-09-28 | 东莞新科技术研究开发有限公司 | Method for cleaning article with photoresist and photoresist cleaning agent |
| CN113736584A (en) * | 2021-09-07 | 2021-12-03 | 珠海市板明科技有限公司 | Polyimide degumming agent composition for wafers and preparation method thereof |
| CN114256062A (en) * | 2021-12-24 | 2022-03-29 | 富芯微电子有限公司 | Method for removing photoresist and cleaning AL product before film coating |
| CN114472368A (en) * | 2021-06-09 | 2022-05-13 | 华显光电技术（惠州）有限公司 | Residual glue cleaning method and device |
-
2022
- 2022-08-05 CN CN202210935065.XA patent/CN115318717A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102096345A (en) * | 2009-12-11 | 2011-06-15 | 安集微电子（上海）有限公司 | Thick-film photoresist cleaning solution and cleaning method thereof |
| CN102944986A (en) * | 2012-11-13 | 2013-02-27 | 大连三达维芯半导体材料有限公司 | Polyimide stripping liquid for chips and preparation method of polyimide stripping liquid |
| CN110727182A (en) * | 2019-10-31 | 2020-01-24 | 湖北兴福电子材料有限公司 | Method for stripping photoresist |
| CN111073035A (en) * | 2019-12-12 | 2020-04-28 | 江苏奥神新材料股份有限公司 | Method for rapidly degrading and recycling polyimide material |
| CN113441426A (en) * | 2020-03-24 | 2021-09-28 | 东莞新科技术研究开发有限公司 | Method for cleaning article with photoresist and photoresist cleaning agent |
| CN114472368A (en) * | 2021-06-09 | 2022-05-13 | 华显光电技术（惠州）有限公司 | Residual glue cleaning method and device |
| CN113736584A (en) * | 2021-09-07 | 2021-12-03 | 珠海市板明科技有限公司 | Polyimide degumming agent composition for wafers and preparation method thereof |
| CN114256062A (en) * | 2021-12-24 | 2022-03-29 | 富芯微电子有限公司 | Method for removing photoresist and cleaning AL product before film coating |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4878991A (en) | Simplified method for repair of high density interconnect circuits | |
| US4087367A (en) | Preferential etchant for aluminium oxide | |
| US8038798B2 (en) | Method of and apparatus for cleaning substrate | |
| KR20030008163A (en) | Production method for bonded substrates | |
| CN115318717A (en) | Method for removing residual glue on heating plate PI of baking unit | |
| CN101593713B (en) | Method for detecting copper diffusion defect in aluminium down-lead bonding pad | |
| US20020115284A1 (en) | Method of cleaning a dual damascene structure | |
| CN110993485B (en) | Surface passivation method of silicon nitride ceramic copper-clad substrate | |
| US20070181532A1 (en) | Cmp clean process for high performance copper/low-k devices | |
| CN111799152B (en) | Wafer double-sided metal process | |
| US7368383B2 (en) | Hillock reduction in copper films | |
| CN115274470A (en) | Method for manufacturing wafer non-photosensitive polyimide layer | |
| EP2345073A1 (en) | Application of a self-assembled monolayer as an oxide inhibitor | |
| US20080194077A1 (en) | Method of low temperature wafer bonding through Au/Ag diffusion | |
| KR20050017142A (en) | Rinse solution and clean method for semiconductor device using the same | |
| US9362241B2 (en) | Manufacturing method for semiconductor devices | |
| JP2002334897A (en) | Bump structure of semiconductor device and forming method therefor | |
| JP3413098B2 (en) | Dry etching substrate surface treatment method and apparatus | |
| CN111933516B (en) | Wafer cleaning method | |
| JPH11233554A (en) | Correction method of solder bump | |
| US6274504B2 (en) | Minimizing metal corrosion during post metal solvent clean | |
| TWI819583B (en) | Circuit board repair methods | |
| US20070298620A1 (en) | Surface treatment, sorting and assembling methods of microelectronic devices and storage structure thereof | |
| KR100633686B1 (en) | Method for cleaning semiconductor wafer | |
| CN113506722A (en) | Cleaning method of copper interconnection structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |