CN115312645A - Semiconductor light-emitting element - Google Patents
Semiconductor light-emitting element Download PDFInfo
- Publication number
- CN115312645A CN115312645A CN202210788042.0A CN202210788042A CN115312645A CN 115312645 A CN115312645 A CN 115312645A CN 202210788042 A CN202210788042 A CN 202210788042A CN 115312645 A CN115312645 A CN 115312645A
- Authority
- CN
- China
- Prior art keywords
- ohmic contact
- semiconductor light
- finger electrodes
- layer
- adjacent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 119
- 238000000034 method Methods 0.000 claims description 23
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 5
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 5
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical group [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 5
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 232
- 239000000758 substrate Substances 0.000 description 24
- 239000000463 material Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 238000003892 spreading Methods 0.000 description 11
- 230000007480 spreading Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 7
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 6
- 238000005275 alloying Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- -1 ITO Chemical class 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052809 inorganic oxide Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
A semiconductor light emitting element comprises a semiconductor light emitting sequence, wherein the semiconductor light emitting sequence comprises a first type conductive semiconductor layer, a second type conductive semiconductor layer and a light emitting layer between the first type conductive semiconductor layer and the second type conductive semiconductor layer along the thickness direction; a plurality of finger electrodes positioned at one side in the thickness direction of the semiconductor light emitting sequence; and a plurality of ohmic contact regions on the opposite side of the semiconductor light emitting sequence from the plurality of finger electrodes, the plurality of ohmic contact regions between every two adjacent finger electrodes being arranged in a plurality of columns along a direction in which the finger electrodes extend, as viewed from the side of the semiconductor light emitting sequence finger electrodes, wherein a distance between any one ohmic contact region (a) of a first column closest to the finger electrodes and an adjacent ohmic contact region (B) of the same column is larger than a distance between the any one ohmic contact region (a) and an adjacent one ohmic contact region (C) of a second column closest to the finger electrodes, and the plurality of ohmic contact regions of the adjacent two columns are staggered in a direction perpendicular to the finger electrodes.
Description
Technical Field
The present invention relates to a semiconductor light emitting element.
Background
The LED light emitting diode includes a first type conductivity semiconductor layer (N-type doping), a light emitting layer, and a second type conductivity semiconductor layer (P-type doping). How the current spreading is performed between the first-type conductivity semiconductor layer and the second-type conductivity semiconductor layer is a key factor affecting the internal quantum efficiency. Improvement of the current spreading of the electrode to the side of the semiconductor sequence, such as by laterally arranging an extension electrode on the side of the main current injection electrode to increase the area of the injection current and to improve the uniformity of the injection current, or by arranging an insulating layer between the electrode and the semiconductor sequence and providing a plurality of openings in the insulating layer to form a plurality of ohmic contact regions of the electrode, is currently the main improvement. The positional relationship of the plurality of ohmic contact regions in which the extension electrode or the insulating layer is opened also seriously affects the efficiency of current extension and transmission.
Disclosure of Invention
The invention provides a semiconductor light-emitting element, which comprises a semiconductor light-emitting sequence, wherein the semiconductor light-emitting sequence comprises a first type conductivity semiconductor layer, a second type conductivity semiconductor layer and a light-emitting layer between the first type conductivity semiconductor layer and the second type conductivity semiconductor layer along the thickness direction; a plurality of finger electrodes positioned at one side in the thickness direction of the semiconductor light emitting sequence; a plurality of ohmic contact regions on an opposite side of the semiconductor light emitting sequence from the plurality of finger electrodes, wherein: viewed from one side of the plurality of finger electrodes of the semiconductor light-emitting sequence, the plurality of ohmic contact regions between every two adjacent finger electrodes are arranged in a plurality of rows along the extending direction of the finger electrodes, wherein the distance between any one ohmic contact region (A) of the first row closest to one finger electrode and an adjacent ohmic contact region (B) of the same row is larger than the distance between any one ohmic contact region (A) and an adjacent ohmic contact region (C) of the second row close to the finger electrode, and the plurality of ohmic contact regions of the adjacent two rows are staggered in the direction perpendicular to the finger electrodes.
More preferably, the plurality of finger electrodes are mainly parallel to each other, and more preferably, the plurality of ohmic contact regions are arranged in a plurality of columns along the extending direction between the portions of the plurality of finger electrodes extending parallel to each other.
More preferably, the plurality of contact areas are arranged in an array.
More preferably, there are four equally spaced ohmic contact regions around any one ohmic contact region of a column not closest to the finger electrode.
More preferably, the four equidistant ohmic contact regions form a right-angled square structure.
More preferably, the plurality of contact regions are arranged in such a manner that six ohmic contact regions are equally spaced around one contact region.
More preferably, an adjacent one of the ohmic contact regions (C) of the second column is located between adjacent two of the ohmic contact regions (a) and (B) of a column closest to the finger electrodes, as viewed in a direction perpendicular to the extending direction of the finger electrodes.
More preferably, the distance between any one ohmic contact region (a) and an adjacent one ohmic contact region (C) of an adjacent column is equal to or greater than twice the distance between the adjacent two columns.
More preferably, the plurality of finger electrodes do not overlap the plurality of ohmic contact regions as viewed in a thickness direction of the semiconductor light emitting sequence.
More preferably, the distance between any one of the contact regions and the adjacent finger electrode is 5% -50% of the horizontal distance between the two adjacent finger electrodes, wherein the horizontal distance is obtained by looking down from one side of the semiconductor light emitting sequence.
More preferably, a plurality of contact areas between every two adjacent finger electrodes are arranged in a plurality of rows along the direction of the finger electrodes, and the distance between any two adjacent rows of the plurality of rows is between 1 and 50 μm.
More preferably, the size of each of the ohmic contact regions is 1 to 50 μm.
More preferably, the ohmic contact regions occupy 3 to 50% of the area of the side adjacent to the semiconductor light-emitting sequence.
More preferably, the major extension portions of each of the plurality of finger electrodes are arranged in parallel with each other.
More preferably, the plurality of finger electrodes includes the same first electrode region from which the plurality of finger electrodes extend.
More preferably, the width of the plurality of finger electrodes is 1 to 20 μm.
More preferably, the insulating layer is formed on the other side of the semiconductor light emitting sequence in the thickness direction, the insulating layer has a plurality of exposed regions exposing the other side of the semiconductor light emitting sequence in the thickness direction, and the plurality of exposed regions are a plurality of ohmic contact regions.
More preferably, the insulating layer is magnesium fluoride or calcium fluoride or silicon oxide or silicon nitride.
More preferably, the plurality of exposed regions of the insulating layer are formed by a plurality of through holes, and the opening size of the through holes on the other side of the thickness direction of the semiconductor light emitting sequence is smaller than the opening size on the side far away from the semiconductor light emitting sequence.
More preferably, the side of the insulating layer away from the semiconductor light emitting sequence is provided with a conductive layer, and the conductive layer can comprise a mirror reflection layer.
By arranging that the distance between any one contact area of the column with the extending direction closest to the finger electrode and the adjacent contact area of the same column is larger than the distance between the contact area and the adjacent contact area of the adjacent column, the transverse current spreading of the finger electrode along two sides can be effectively improved.
Drawings
FIG. 1 is a view showing a structure obtained after a first ohmic contact layer is formed on a semiconductor light emitting sequence in the process of example 1;
FIG. 2 is a view showing a structure obtained after a second ohmic contact layer is formed after transfer to a temporary substrate in the process of example 1;
fig. 3 is a structure obtained by forming an insulating layer, a transparent conductive layer, a reflective layer, and a bonding support substrate on the second ohmic contact layer in the process of embodiment 1;
fig. 4 is a schematic view of the structure of a semiconductor light-emitting element obtained in example 1;
fig. 5 is a schematic top view showing a structure of a semiconductor light emitting element obtained in example 1 on the side of a first ohmic contact layer;
FIG. 6 is an enlarged partial schematic view of the structure of FIG. 5 within the dashed circle;
FIG. 7 is a view showing a structure obtained after a first ohmic contact layer is formed on a semiconductor light emitting sequence in the process of example 2;
fig. 8 is a structure obtained after a second ohmic contact layer is prepared after transfer to a temporary substrate in the process of example 2;
fig. 9 is a schematic view of a semiconductor light-emitting element of embodiment 2;
fig. 10 is a schematic top view showing a second ohmic contact layer side of the semiconductor light emitting element according to embodiment 2;
FIG. 11 is an enlarged partial view of the structure of FIG. 10 within the dashed circle;
fig. 12 is a schematic view of a semiconductor light-emitting element according to embodiment 3;
fig. 13 is a schematic diagram of a top-view structure of the first ohmic contact layer side of the obtained semiconductor light emitting element of the comparative example;
fig. 14 is a partially enlarged structural view within a dotted circle in fig. 13.
Detailed Description
Example 1
Fig. 1 to 6 show structures manufactured by the manufacturing method according to the respective steps disclosed in embodiment 1 of the present invention. The method for producing an optoelectronic component according to the invention comprises the following steps:
first, a semiconductor light emitting sequence is provided:
a growth substrate 101, such as a growth substrate for MOCVD growth of semiconductor light emitting sequences, is provided, including but not limited to germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), gallium phosphide (GaP), sapphire, silicon carbide (SiC), silicon (Si), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AlN), glass, composite, diamond, CVD diamond, diamond-like carbon (DLC), and the like.
The first window layer 101 is formed over the substrate to contain at least one element selected from the group consisting of Al, ga, in,As, P, N, such As GaN, alGaInP, or any other suitable material. The first window layer 111 is a layer of the same conductivity type as the semiconductor light-emitting sequence on the same side, e.g. N-type or p-type Al X Ga （1−X） InP, where 0 ≦ X ≦ 1h, or as AlGaAs. The first window layer 111 has two opposing first surfaces, wherein the window layer of the first surfaces is closer to the substrate.
A transition layer may optionally be formed between the growth substrate and the first window layer, the transition layer two material systems may act as a buffer system (not shown in the figures). A structure for a light emitting diode, a transition layer two material system for reducing lattice mismatch. In another aspect, it may be a single transition layer, multiple layers, or a combination of two or two transition structures, wherein the material layers may be organic, inorganic, metal, semiconductor, etc., and the structures may be a reflective layer, a thermally conductive layer, an electrically conductive layer, an ohmic contact layer, an anti-deformation layer; a stress release layer, a stress adjustment layer, an adhesive layer, a wavelength conversion layer, a mechanical fixing structure, an etch stop layer, and the like.
Next, a semiconductor light emitting sequence is formed on the window layer 101, including at least the first semiconductor layer 103 having a first conductivity type, and the light emitting layer 104 and the second semiconductor layer 1105 having a second conductivity type. The first and second semiconductor layers 105 and 105 are two single-layer structures, or two multi-layer structures, "multi-layer" means two or more layers having different electric conductivity), the first and second conductivity types respectively provide electrons or holes, and are doped with different dopants. If the first semiconductor layer 103 and the second semiconductor layer 105 are of semiconductor material, for example Al X Ga （1−X） InP, where 0 ≦ X ≦ 1, or as AlGaAs; the first or second conductivity type may be P-type or N-type. As an example, the first window layer 103 has the same conductivity type as the first layer semiconductor layer, such as N-type. In addition, the first window layer 101 may have a higher impurity concentration than the first layer semiconductor layer 103, and thus have better conductivity. Other non-semiconductor materials, such as metals, oxide layers, insulating layers, etc., may also be selectedIs formed on the surface of the semiconductor light-emitting sequence.
The light emitting layer 104 is formed by stacking a series of commonly used materials such as aluminum gallium indium phosphide (AlGaInP), aluminum indium gallium nitride (AlInGaN) or aluminum gallium arsenic (AlGaAs), and is specifically a single heterojunction, a double heterojunction structure or a multiple quantum well structure, and the MQW structure comprises a plurality of barrier layers and well layers which are alternately stacked; each barrier layer comprises AlyGa (1-y) InP, wherein 0 < y < 1, and each of the well layers comprises AlzGa (1-z) InP, wherein 0 < z < 1. Furthermore, the wavelength of the emitted light can also be adjusted by varying the composition of the well or barrier layer composition for the number of quanta, e.g. red light y for the dominant wavelength of the emitted light between 600 and 630nm is about 0.7 or amber between 580 and 600 nm, y is about 0.55. The luminescent radiation provided by the luminescent layer 104 can be from ultraviolet to green light of 200-550nm, and can also be red, yellow, orange, amber or infrared light of 550-950nm.
A second window layer 106 is formed over the semiconductor light emitting sequence, which may be a current spreading layer on the side of the second semiconductor layer 105, of a material containing at least one selected from the group consisting of Al, ga, in, as, P, N, such As GaN, alGaInP or any other suitable material, the second window layer 106 including at least one material different from the material of the semiconductor light emitting sequence, the second window layer preferably being of the same conductivity type As the second semiconductor layer, such As a P-type GaP layer. The second window layer may be fabricated using the same process as the semiconductor sequence, or as an integral part of the semiconductor light emitting sequence, as an example.
Secondly, manufacturing a first ohmic contact layer on the second window:
then, as shown in fig. 1, a first ohmic contact layer 107 is formed, such as a conductive material, such as a metal or a transparent inorganic oxide conductive material, a metal, such as an alloy, specifically, auBe or AuGe, which may also be a single-layer or multi-layer metal or alloy, and the first ohmic contact layer is mainly used for ohmic contact and current spreading of the electrode and the semiconductor light emitting sequence side; the inorganic oxide conductive material may be ITO, IZO, or GZO, etc., on the second window layer 106. The first ohmic contact layer 107 is preferably, but not limited to, formed on the second semiconductor layer side by evaporation or chemical plating, and then alloyed at 300 to 500 ℃ to form an alloyed contact layer between the first ohmic contact layer 107 and the second window layer for ohmic contact. The details of the alloying process described are well known to those skilled in the art and need not be disclosed herein.
Thirdly, removing the growth substrate:
as shown in fig. 2, a temporary substrate 108, such as glass, is bonded to the first ohmic contact layer 107 and the second window layer 106, and the growth substrate 101 is removed, wherein the bonding may be a material such as glue or resin that is easily removed by heating or solvent dissolution or decomposition, and the bonding process is a conventional process. The method for removing the growth substrate can be various, and conventional selection can be carried out according to the actual growth substrate, such as wet etching or dry etching or grinding for removal; the growth substrate is removed to expose the first window layer 102.
Fourth, forming the second ohmic contact layer, the reflective layer, and the support substrate on the first window layer side:
a second ohmic contact layer 109 is formed on the first window layer 102, and the second ohmic contact layer 109 is preferably made of a metal material, and more preferably a metal alloy such as AuGe or AuBe, in order to form a good electrical contact between the first window layers. The second ohmic contact layer 109 is formed on the first window layer 102 in the form of a plurality of ohmic contact regions, and does not overlap the first ohmic contact layer 107 in a thickness direction to improve current spreading between the first ohmic contact layer 107 and the second ohmic contact layer 109.
As shown in fig. 3, a transparent insulating layer 110 is then formed on the surface of the second ohmic contact layer 109, the forming process of the transparent insulating layer 110 is preferably, but not limited to, electron beam or sputter evaporation, the material of the insulating layer 110 is oxide, nitride or fluoride, such as silicon dioxide, silicon nitride, calcium fluoride or magnesium fluoride, etc., the refractive index of the insulating layer 110 is between 1.3 and 1.6, and at least the refractive index of the insulating layer is 1.5 lower than that of the first window layer 102. The thickness of the insulating layer 110 is 50 to 500nm, and more preferably 50 to 100nm; the insulating layer 110 is etched by BOE or RIE method to expose the second ohmic contact layer 109 or may further expose a portion of the first window layer 102. Then, a transparent conductive layer 111 is formed on the surfaces of the second ohmic contact layer 109 and the insulating layer 110, the transparent conductive layer is a transparent conductive metal oxide, such as ITO, IZO, GZO, or CTO, and the thickness of the transparent conductive layer 111 may be preferably 5 to 15nm. Then, a metal reflective layer 112 is formed on the transparent conductive layer 111, and the transparent conductive layer 111 can serve as an adhesion between the metal reflective layers 112. The insulating layer 109 functions to block current, when current flows through the second ohmic contact layer 109, the second ohmic contact layers 109 at multiple positions have a current spreading function, and the insulating layer 110 and the metal reflective layer 112 may form an ODR structure, thereby improving the reflective efficiency, and the reflectivity may reach more than 95%.
The reflective layer 112 is bonded to the supporting substrate 113, and the bonding process may be metal-metal high-temperature high-pressure bonding, and the composition of the metal-metal bonding may be at least one of In, au, sn, pb, inAu, and SnAu.
The temporary substrate 108 is then removed, exposing the first ohmic contact layer and the first window layer.
Fifthly, removing the temporary substrate, manufacturing a first electrode and a second electrode:
as shown in fig. 4, a first electrode 1071 is formed on the first ohmic contact layer 107, the material of the first electrode 1071 is preferably a metal material for external bonding wires, and more preferably at least one of gold and aluminum, the first electrode 1071 connects one ends of the finger electrodes of the plurality of first ohmic contact layers 1071, the other ends of the finger electrodes extend out, and a second electrode 114, preferably a metal or a metal alloy such as Pt or Au, is formed on the back surface side of the supporting substrate 113.
And cutting and separating to form chips with corresponding sizes, and manufacturing insulating protective layers on the exposed side surfaces and surfaces of the semiconductor light-emitting sequences and the surfaces of the second ohmic contact layers in order to better protect the semiconductor light-emitting sequences and the second ohmic contact layers, thereby completing the manufacture of a single chip. The single chip may be used for transfer to subsequent packaging and application fabrication.
The positional relationship between the first ohmic contact layer and the second ohmic contact layer will be specifically described below. As shown in fig. 5, the first ohmic contact layer 107 includes a plurality of finger electrodes horizontally extending at one side of the second window layer 106, the plurality of finger electrodes are connected to the first electrode 1071, and current is injected through the first electrode 1071 and spread and injected into the semiconductor light emitting sequence through the plurality of finger electrodes, and then transferred to the plurality of contact regions of the second ohmic contact layer longitudinally and laterally along the thickness direction of the semiconductor light emitting sequence and transferred downward to the second electrode, or transferred from the second electrode to the plurality of contact regions of the second ohmic contact layer and further transferred to the semiconductor light emitting sequence, and then transferred to the first electrode through the plurality of finger electrodes of the first ohmic contact layer, thereby improving uniformity of current transfer.
The small portion of each finger electrode connected to the first electrode may be curved or bent or linear; in order to ensure the current transmission uniformity of the finger electrodes on one side of the semiconductor sequence, the main part of each finger electrode preferably extends in parallel, which means that the parallel can deviate from the parallel by about 10 degrees at most as much as possible, namely, a plurality of finger electrodes can extend in a way that the main parts are mutually parallel; the number of the plurality of finger electrodes is at least two, the width of each finger electrode and the distance between adjacent fingers can be designed conventionally according to the size of an actual chip; the widths of the plurality of finger electrodes may be constant along the extending direction of the finger electrodes or may vary according to the uniformity of current spreading, for example, the widths may gradually decrease along the extending direction, and the size of the portion of the finger electrodes around the first electrode is larger than that of the portion far away from the first electrode; the width of the plurality of finger electrodes is 1 to 50 μm.
Viewed from the finger electrode side of the semiconductor light emitting sequence, the second ohmic contact layers 107 between every two adjacent finger electrodes are arranged in a plurality of dot shapes to form a plurality of second ohmic contact regions arranged in a plurality of columns along the direction parallel to the finger electrodes, more preferably, wherein the plurality of finger electrodes do not overlap with the plurality of second ohmic contact regions in the thickness direction so that current may simultaneously propagate in the lateral and longitudinal directions; more preferably, the plurality of second ohmic contact regions are arranged on one side of the semiconductor light emitting sequence in an array manner, the array is formed by arranging a plurality of fixed second ohmic contact regions in a fixed unit and repeatedly arranging the fixed second ohmic contact regions, specifically, as shown in fig. 5, the plurality of second ohmic contact regions are arranged in a closest hexagonal manner, that is, six equidistant second ohmic contact regions are arranged around one second ohmic contact region (except for a row of the plurality of second ohmic contact regions closest to the strip-shaped electrode), preferably, the size of each second ohmic contact region is 1 to 50 μm, each of the plurality of second contact regions is circular, polygonal or elliptical, and the ratio of the total area of the plurality of ohmic contact regions to the area on one side of the semiconductor sequence is 3 to 50%.
Since the path for current transmission is preferably selected in the shortest path (with the smallest resistance), the second ohmic contact areas of the first column closest to one finger electrode are closest to the finger electrode in the vertical distance, the ohmic contact areas of the second column are farther from the finger electrode in the vertical distance, the current is preferably transmitted from the direction perpendicular to the extending direction of the finger electrode to the second ohmic contact areas of the first column on both sides, and the current is more likely to jam the ohmic contact areas of the first column, so that the current of the second ohmic contact areas of the first column is excessively concentrated, and the current transmission is not uniform; therefore, in order to ensure the uniformity of current transmission between the finger electrodes and the second ohmic contact regions and prevent current from concentrating near the two sides of the finger electrodes, the invention is specially designed to make the second ohmic contact electrodes as close as possible to the finger electrodes and make the distances from the side of the finger electrodes to the second row of the plurality of second ohmic contact regions closer.
As shown in fig. 6 in particular, the distance between any one second ohmic contact region a of the first column closest to the finger electrode and the adjacent second ohmic contact region B of the same column is greater than the distance between the one second ohmic contact region a and the adjacent one second ohmic contact region C of the adjacent column; specifically, the nearest finger electrode parallel to the extending direction of the finger electrode is definedThe distance between any second ohmic contact area A of the first row of the electrode and an adjacent second ohmic contact area B of the same row is D1, the range of D1 is 1 to 50 mu m, the distance D2 between any second ohmic contact area B of the first row closest to the finger-shaped electrode and an adjacent second ohmic contact area C of the adjacent row is larger than D2, and therefore the adjacent second ohmic contact area C of the adjacent row can be guaranteed to be as close to the finger-shaped electrode as possible; more preferably, as shown in fig. 6, when the plurality of second ohmic contact regions are arranged in the most compact hexagonal arrangement, the ratio between D1 and D2 is
:1; more preferably, any one second ohmic contact region C of the second column is located between two adjacent second ohmic contact regions a and B of the first column when viewed in a direction perpendicular to the finger electrodes, that is, the second ohmic contact region C is staggered or spaced from the two second ohmic contact regions a and B of the first column when viewed in the direction perpendicular to the finger electrodes, that is, the connecting line of the second contact region C with the second contact regions a and B is not perpendicular to the finger electrodes, so that it is ensured that part of the current of the finger electrodes can flow to the second contact region C more easily, and the proportion of the current concentrated in the plurality of second ohmic contact regions of the first column is reduced; more preferably, the distance between two adjacent columns is half the value of D2.
More preferably, a distance length between two adjacent second ohmic contact regions of any one column is defined as one unit D3, and a distance between any one second ohmic contact region and an adjacent one second ohmic contact region of an adjacent column is smaller than the one unit D4, where D3= D1 and D4= D2.
In order to ensure good current spreading between the finger electrodes and the second ohmic contact areas, the distance between any second ohmic contact area of the first column closest to the finger electrodes and the finger electrodes, which is parallel to the extension direction of the finger electrodes, is 5% -50% of the horizontal distance between two adjacent finger electrodes; conversely, if the distance between the second ohmic contact regions of the first row and the finger electrode is too close, the current will be concentrated excessively on the second ohmic contact regions of the first row, which is not favorable for the lateral transmission of the current.
Example 2
A manufacturing process different from that of embodiment 1 is to form a second ohmic contact layer 201 such as a metal alloy, e.g., auBe or AuGe alloy, on the second window layer 106 on the light emitting semiconductor sequence manufactured in the first step, thereby forming the structure shown in fig. 7. Wherein the second ohmic contact layer 201 includes a plurality of independent ohmic contact regions horizontally distributed along one side of the second window layer 106. And then alloying at 300-500 ℃ to form an alloying contact layer between the second ohmic contact layer 201 for ohmic contact and the second window layer 106. The details of the alloying process described are well known to those skilled in the art and need not be disclosed herein.
As shown in fig. 8, a transparent insulating layer 202 is formed on the surface of the second ohmic contact layer 201, the forming process of the transparent insulating layer 202 is electron beam or sputter evaporation, the material of the insulating layer 202 is oxide, nitride or fluoride, such as silicon dioxide, silicon nitride, calcium fluoride or magnesium fluoride, etc., the refractive index of the insulating layer 202 is between 1.3 to 1.6, and at least the refractive index of the insulating layer is 1.5 lower than that of the first window layer. The thickness of the insulating layer 202 is 50 to 500nm, and more preferably 50 to 100nm; the insulating layer 202 is etched by BOE or RIE method to expose the second ohmic contact layer 201 or may further expose a portion of the second window layer 201.
And then manufacturing a transparent conductive layer 203 on the surfaces of the second ohmic contact layer 201 and the insulating layer 202, wherein the transparent conductive layer 203 is a transparent conductive metal oxide such as ITO, IZO, GZO or CTO, and the thickness of the transparent conductive layer is 5 to 500nm. A metal reflective layer 204 is then formed on the transparent conductive layer 203, with the transparent conductive layer 203 serving as an adhesion between the metal reflective layers. The insulating layer 202 is used for blocking current, when current flows through the second ohmic contact layer, the first ohmic contact layers at multiple positions have a current spreading function, meanwhile, the insulating layer 203 and the reflecting layer 204 can form an ODR structure, the reflecting efficiency is improved, and the reflectivity can reach more than 95%; the reflecting layer can be made of metal materials with high reflectivity such as silver, gold and the like.
The reflective layer 204 is then bonded to the supporting substrate 205, and the bonding process may be metal-to-metal high temperature and high pressure bonding, and the composition of the metal-to-metal bonding may be at least one of In, au, sn, pb, inAu, snAu.
The growth substrate 101 is then removed, exposing the first window layer 102.
Next, a first ohmic contact layer 207, such as a conductive material such as AuBe or AuGe alloy, is formed on the first window layer 102. The first ohmic contact layer 107 is preferably, but not limited to, formed on the second semiconductor layer side by evaporation or chemical plating or in a manner, and then alloyed at 300 to 500 ℃ to form an alloyed contact layer between the first ohmic contact layer 107 for ohmic contact and the first window layer 102. The details of the alloying process described are well known to those skilled in the art and need not be disclosed herein.
Then, a first electrode 2071 is formed on the first ohmic contact layer 207, the first electrode 2071 is used for external electrical connection, and the second electrode 206 is formed on the back surface side of the support substrate 205.
Specifically, the first ohmic contact layer 207 includes a plurality of finger electrodes extending horizontally on one side of the second window layer, the plurality of finger electrodes are connected to the first electrode 2071, and current is injected through the first electrode 2071 and spread by the plurality of finger electrodes, and then transferred to the plurality of contact regions of the second ohmic contact layer longitudinally and laterally in the thickness direction of the semiconductor light emitting sequence and transferred downward to the second electrode 206, or transferred from the second electrode 206 to the plurality of contact regions of the second ohmic contact layer and further transferred to the semiconductor light emitting sequence, and then transferred to the first electrode through the plurality of finger electrodes of the first ohmic contact layer.
The small part of each finger electrode near the connection with the first electrode can be bent or linear; in order to ensure the uniformity of current transmission of the finger electrodes on one side of the semiconductor sequence, it is preferable that the main part of each finger electrode is as parallel as possible, i.e. a plurality of finger electrodes can extend in such a way that the main parts are parallel to each other; the width of each finger electrode and the distance between adjacent fingers can be designed according to the size of an actual chip; the widths of the plurality of finger electrodes may be constant along the extending direction of the finger electrodes or may vary according to the uniformity of current spreading, for example, the widths may gradually decrease along the extending direction, and the size of the portion of the finger electrodes around the first electrode is larger than that of the portion far away from the first electrode; the width of the plurality of finger electrodes is 1 to 20 μm.
Viewed from the thickness direction of the semiconductor light-emitting sequence, the second ohmic contact layers 201 between every two adjacent finger electrodes are arranged in a plurality of points to form a plurality of second ohmic contact regions, and the plurality of second ohmic contact regions are arranged in a plurality of rows along the direction parallel to the finger electrodes; wherein the plurality of finger electrodes do not overlap the plurality of second ohmic contact regions in the thickness direction; the plurality of second ohmic contact regions are arranged on one side of the semiconductor light emitting sequence in an array manner, the array is formed by arranging a plurality of second ohmic contact regions in a repeating unit, specifically, as in this embodiment or as shown in fig. 10-11, wherein a distance between any one ohmic contact region a 'of the first column closest to the finger electrode and an adjacent ohmic contact region B' of the same column is greater than a distance between any one ohmic contact region a 'and an adjacent ohmic contact region C' of the second column close to the finger electrode, and the plurality of ohmic contact regions of the adjacent two columns are staggered in a direction perpendicular to the finger electrode; more preferably, the ratio of the distance between any one ohmic contact region (a, a ') of the first column closest to the finger electrode and an adjacent ohmic contact region (B, B') of the same column to the distance between said any one ohmic contact region (a, a ') and an adjacent ohmic contact region (C, C') of the second column closest to the finger electrode is greater than
And the ohmic contact regions in two adjacent columns are staggered in the direction perpendicular to the finger electrodes. The plurality of second ohmic contact regions are patterned in a square structure as an array, i.e., in which the second ohmic contact regions are not closest to the finger electrodesThere are four ohmic contact regions (including a ', B ') equally spaced around any one of the ohmic contact regions C ' in the other columns of (a) and at the four corner positions of a square, the square shown being a square or rectangle; the size of each second ohmic contact area is 1 to 50 micrometers; each of the plurality of second contact regions is circular or polygonal or elliptical; the proportion of the total area of the ohmic contact areas to the area of one side of the semiconductor sequence is 3-50%; more preferably, the distance between any one ohmic contact region (a) and an adjacent one ohmic contact region (C) of an adjacent column is greater than twice the distance between the adjacent two columns.
Example 3
As shown in fig. 12, different from embodiment 2, an insulating layer 301 is formed on the second window layer 106, a forming process of the transparent insulating layer 301 is electron beam or sputter deposition, a material of the insulating layer 301 is an oxide, a nitride or a fluoride, such as silicon dioxide, silicon nitride, calcium fluoride or magnesium fluoride, etc., a refractive index of the insulating layer is between 1.3 and 1.6, and at least a refractive index of the insulating layer 301 is 1.5 lower than that of the first window layer 106. The thickness of the insulating layer 301 is 50 to 500nm, and more preferably 50 to 100nm; the insulating layer 301 is etched by BOE or RIE method to expose the first window layer part, and a plurality of tiny through holes are formed in the insulating layer 301; the size of each through hole is 1-50 mu m, and the percentage of the plurality of through holes on one side of the second window layer 106 or the semiconductor light-emitting sequence is 10-50%.
A transparent conductive layer 302, such as ITO, IZO, GZO or CTO, is further formed in the plurality of through holes exposed at the second window layer 106 side and on the surface of the insulating layer 301, wherein the thickness of the transparent conductive layer 302 is 5 to 5000nm, and the transparent conductive layer may be formed by a single layer or a plurality of layers of different materials. A plurality of ohmic contact regions, which are regions of contact between the transparent conductive layer 302 and the second window layer 106, and a metal reflective layer 303 is then formed on the transparent conductive layer 302. The support substrate 304 is then bonded and the subsequent fabrication process and embodiment are the same.
Next, a first ohmic contact layer 307, such as a conductive material such as AuBe or AuGe alloy, is formed on the first window layer 102. The first ohmic contact layer 307 is preferably but not limited to an alloyed contact layer between the first ohmic contact layer 307 and the first window layer 102, which is formed on the second semiconductor layer side by evaporation or chemical plating or a mode, and then is alloyed at 300 to 500 ℃. The details of the alloying process described are well known to those skilled in the art and need not be disclosed herein.
Then, a first electrode 3071 is formed on the first ohmic contact layer 307, the first electrode 3071 is used for external electrical connection, and a second electrode 305 is formed on the back surface side of the support substrate 205.
The positional relationship between the finger electrodes for the first ohmic contact layer 307 and the plurality of ohmic contact regions of the transparent conductive layer 302 is the same as the arrangement of the first embodiment.
Comparative example 1
The materials of the respective layers of the light emitting element were arranged in the same manner as in example 1, and as shown in fig. 13, the plurality of second ohmic contact regions in this comparative example were arranged in the closest hexagonal arrangement, i.e., six equidistant ohmic contact regions were provided around any one of the plurality of second ohmic contact regions. Unlike embodiment 1, as shown in fig. 14, the distance between the plurality of contact regions a "and B" is equal to the distance between the ohmic contact regions B "and C", and according to this arrangement, the distance between the ohmic contact regions a, B is greater than the distance between the ohmic contact regions B, C unlike in fig. 5 and 6; according to this arrangement, since the plurality of adjacent ohmic contact regions of the second column close to the finger electrodes are far away from the finger electrodes, the current is preferably concentrated between two adjacent ohmic contact regions close to the first column, resulting in that the current is more easily crowded at the plurality of second ohmic contact regions of the first column, the lateral current diffusion of the region between the finger electrodes is more difficult, and the diffusion is not uniform.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the invention, so that any modifications, equivalents, improvements and the like, which are within the spirit and principle of the present invention, should be included in the scope of the present invention.
Claims (19)
1. A semiconductor light emitting element, comprising:
a semiconductor light emitting sequence including a first type conductivity semiconductor layer, a second type conductivity semiconductor layer, and a light emitting layer therebetween;
a plurality of finger electrodes positioned at one side in the thickness direction of the semiconductor light emitting sequence;
a plurality of ohmic contact regions on the opposite side of the semiconductor light emitting sequence from the plurality of finger electrodes;
the method is characterized in that: the main parts of the plurality of finger electrodes are parallel to each other, and a plurality of ohmic contact areas between the main parts of every two adjacent finger electrodes which are parallel to each other are arranged along the finger electrodes when viewed from one side of the semiconductor light-emitting sequence where the plurality of finger electrodes are arranged
The directions in which the main portions parallel to each other in the poles extend are arranged in a plurality of rows, wherein the distance between any one ohmic contact region (A, A ') of a first row of the main portion closest to one of the finger electrodes and an adjacent ohmic contact region (B, B') of the same row is larger than the distance between any one ohmic contact region (A, A ') and an adjacent one ohmic contact region (C, C') of a second row of the main portion closest to the one of the finger electrodes, and a plurality of ohmic contact regions of the adjacent two rows are arranged in a staggered manner in the direction perpendicular to the direction in which the main portion parallel to each other in the one of the finger electrodes extends.
2. A semiconductor light-emitting element according to claim 1, wherein: the ohmic contact areas are arranged in an array.
3. A semiconductor light emitting element according to claim 2, wherein: the array arrangement is that four equidistant ohmic contact areas are arranged around any one ohmic contact area.
4. A semiconductor light emitting element according to claim 3, wherein: the four equidistant ohmic contact regions form a right angle square.
5. A semiconductor light emitting element according to claim 1, wherein: the ratio of the distance between any one ohmic contact region (A, A ') of the first column closest to the finger electrodes and the adjacent ohmic contact region (B, B') of the same column to the distance between any one ohmic contact region (A, A ') and the adjacent ohmic contact region (C, C') of the second column closest to the finger electrodes is not less than or equal to, and the plurality of ohmic contact regions of the adjacent two columns are staggered in the direction perpendicular to the finger electrodes.
6. A semiconductor light-emitting element according to claim 1, wherein: viewed perpendicular to the direction of extension of the finger electrodes, an adjacent one of the ohmic contact areas (C, C ') of the second column is located between two adjacent ones of the ohmic contact areas (a, a ') and (B, B ') of the column closest to the finger electrodes.
7. A semiconductor light-emitting element according to claim 1, wherein: the distance between any one ohmic contact region (A, A ') and an adjacent one ohmic contact region (C, C') of an adjacent column is greater than or equal to twice the distance between the adjacent two columns.
8. A semiconductor light emitting element according to claim 1, wherein: the plurality of finger electrodes are not overlapped with the plurality of ohmic contact areas when viewed from the thickness direction of the semiconductor light emitting sequence.
9. A semiconductor light emitting element according to claim 1, wherein: the distance between any one ohmic contact area and the adjacent finger electrode is 5% -50% of the horizontal distance between the two adjacent finger electrodes.
10. A semiconductor light emitting element according to claim 1, wherein: and a plurality of ohmic contact areas between every two adjacent finger electrodes are arrayed into a plurality of rows along the direction of the finger electrodes, and the distance between any two adjacent rows of the plurality of rows is between 5 and 50 mu m.
11. A semiconductor light emitting element according to claim 1, wherein: the size of each of the ohmic contact areas is 1 to 50 mu m.
12. A semiconductor light-emitting element according to claim 1, wherein: the ohmic contact areas account for 3 to 50 percent of the area of the side close to the semiconductor light-emitting sequence.
13. A semiconductor light-emitting element according to claim 1, wherein: the main extension portions of each of the plurality of finger electrodes are arranged in parallel with each other.
14. A semiconductor light emitting element according to claim 1, wherein: the plurality of finger electrodes are connected to the same first electrode area, and the plurality of finger electrodes extend out from the first electrode area.
15. A semiconductor light-emitting element according to claim 1, wherein: the insulating layer is formed on the opposite side of the thickness direction of the semiconductor light-emitting sequence and the finger electrode, and the insulating layer is provided with a plurality of exposed areas which expose a part of the semiconductor light-emitting sequence, and the exposed areas are a plurality of ohmic contact areas.
16. A semiconductor light-emitting element according to claim 15, wherein: the insulating layer is magnesium fluoride or calcium fluoride.
17. A semiconductor light emitting element according to claim 15, wherein: the exposed areas of the insulating layer are formed by a plurality of through holes, and the opening size of the through holes on the side of the semiconductor light-emitting sequence is smaller than that on the side far away from the semiconductor light-emitting sequence.
18. The semiconductor light-emitting element according to claim 15, wherein: and one side of the insulating layer, which is far away from the semiconductor light-emitting sequence, is provided with a conducting layer, and the conducting layer comprises a mirror reflection layer.
19. The semiconductor light-emitting element according to claim 1, wherein: the distance between two adjacent ohmic contact regions of any one column is greater than the distance between any one ohmic contact region and one second ohmic contact region of an adjacent column.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210788042.0A CN115312645A (en) | 2019-01-17 | 2019-01-17 | Semiconductor light-emitting element |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910045030.7A CN109830498B (en) | 2019-01-17 | 2019-01-17 | Semiconductor light-emitting element |
| CN202210788042.0A CN115312645A (en) | 2019-01-17 | 2019-01-17 | Semiconductor light-emitting element |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910045030.7A Division CN109830498B (en) | 2019-01-17 | 2019-01-17 | Semiconductor light-emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115312645A true CN115312645A (en) | 2022-11-08 |
Family
ID=66861677
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210788042.0A Pending CN115312645A (en) | 2019-01-17 | 2019-01-17 | Semiconductor light-emitting element |
| CN202210788450.6A Pending CN115312646A (en) | 2019-01-17 | 2019-01-17 | Semiconductor light-emitting element |
| CN201910045030.7A Active CN109830498B (en) | 2019-01-17 | 2019-01-17 | Semiconductor light-emitting element |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210788450.6A Pending CN115312646A (en) | 2019-01-17 | 2019-01-17 | Semiconductor light-emitting element |
| CN201910045030.7A Active CN109830498B (en) | 2019-01-17 | 2019-01-17 | Semiconductor light-emitting element |
Country Status (1)
| Country | Link |
|---|---|
| CN (3) | CN115312645A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707196A (en) * | 2019-10-21 | 2020-01-17 | 扬州乾照光电有限公司 | LED chip with complementary pattern dielectric layer and manufacturing method |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0458353B1 (en) * | 1990-05-24 | 1996-09-18 | Sumitomo Electric Industries, Ltd. | Ohmic contact electrodes for n-type semiconductor cubic boron nitride |
| US10205059B2 (en) * | 2010-02-09 | 2019-02-12 | Epistar Corporation | Optoelectronic device and the manufacturing method thereof |
| TWI762930B (en) * | 2010-02-09 | 2022-05-01 | 晶元光電股份有限公司 | Optoelectronic device |
| JP6595801B2 (en) * | 2014-05-30 | 2019-10-23 | エルジー イノテック カンパニー リミテッド | Light emitting element |
| CN107258022B (en) * | 2015-03-16 | 2019-09-24 | 首尔伟傲世有限公司 | Light-emitting component including metal block |
| CN109075221B (en) * | 2016-04-22 | 2021-06-11 | Lg 伊诺特有限公司 | Light emitting device and display including the same |
-
2019
- 2019-01-17 CN CN202210788042.0A patent/CN115312645A/en active Pending
- 2019-01-17 CN CN202210788450.6A patent/CN115312646A/en active Pending
- 2019-01-17 CN CN201910045030.7A patent/CN109830498B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109830498B (en) | 2022-07-19 |
| CN109830498A (en) | 2019-05-31 |
| CN115312646A (en) | 2022-11-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10749075B2 (en) | Semiconductor light-emitting device | |
| US8791483B2 (en) | High efficiency light emitting diode and method for fabricating the same | |
| US9209362B2 (en) | Semiconductor light emitting device and method of fabricating semiconductor light emitting device | |
| US8395166B2 (en) | Light emitting diode and method of fabricating the same | |
| US8390007B2 (en) | Semiconductor light emitting device and method of fabricating semiconductor light emitting device | |
| JP5056799B2 (en) | Group III nitride semiconductor light emitting device and method of manufacturing the same | |
| US20110233516A1 (en) | Optical semiconductor device including protrusion structure of parallelogram cells and its manufacturing method | |
| CN109994578B (en) | Blue light-emitting diode with vertical structure and preparation method thereof | |
| US20220231196A1 (en) | Semiconductor light-emitting device | |
| JP2004503096A (en) | InGaN based light emitting diode chip and method of manufacturing the same | |
| JP2008016629A (en) | Manufacturing method of group iii nitride light emitting diode element | |
| KR101165254B1 (en) | Vertical light emitting diode having scattering center laminated with a plurality of insulator layer and fabrication method of the same | |
| CN109830498B (en) | Semiconductor light-emitting element | |
| KR101154511B1 (en) | High efficiency light emitting diode and method of fabricating the same | |
| CN111106212A (en) | Deep ultraviolet light-emitting diode with vertical structure and preparation method thereof | |
| KR101669640B1 (en) | High efficiency light emitting diode and method for fabricating the same | |
| KR20090115902A (en) | Fabrication of vertical structured light emitting diodes using group 3 nitride-based semiconductors and its related methods | |
| KR20130009719A (en) | High efficiency light emitting diode and method of fabricating the same | |
| JP2012089801A (en) | Semiconductor light-emitting element, manufacturing method therefor, and package board | |
| KR101916369B1 (en) | Light emitting diode | |
| KR20060134490A (en) | Flip-chip gan-based light emitting diode and manufacturing method of the same | |
| KR101138978B1 (en) | High efficiency light emitting diode and method of fabricating the same | |
| KR101791159B1 (en) | High efficiency light emitting diode and method for fabricating the same | |
| KR20090103343A (en) | Fabrication of vertical structured light emitting diodes using group 3 nitride-based semiconductors and its related methods | |
| CN118213446A (en) | Light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |