CN115312480B - 一种用于igbt功率模块的dbc基板 - Google Patents
一种用于igbt功率模块的dbc基板 Download PDFInfo
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- CN115312480B CN115312480B CN202211240557.3A CN202211240557A CN115312480B CN 115312480 B CN115312480 B CN 115312480B CN 202211240557 A CN202211240557 A CN 202211240557A CN 115312480 B CN115312480 B CN 115312480B
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- air
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- igbt power
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- 238000001125 extrusion Methods 0.000 claims description 17
- 230000005540 biological transmission Effects 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 14
- 239000000110 cooling liquid Substances 0.000 claims description 14
- 230000001681 protective effect Effects 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 9
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202211240557.3A CN115312480B (zh) | 2022-10-11 | 2022-10-11 | 一种用于igbt功率模块的dbc基板 |
Applications Claiming Priority (1)
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CN202211240557.3A CN115312480B (zh) | 2022-10-11 | 2022-10-11 | 一种用于igbt功率模块的dbc基板 |
Publications (2)
Publication Number | Publication Date |
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CN115312480A CN115312480A (zh) | 2022-11-08 |
CN115312480B true CN115312480B (zh) | 2023-01-24 |
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CN202211240557.3A Active CN115312480B (zh) | 2022-10-11 | 2022-10-11 | 一种用于igbt功率模块的dbc基板 |
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CN (1) | CN115312480B (zh) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100426639C (zh) * | 2007-01-04 | 2008-10-15 | 冶金自动化研究设计院 | 一种高压集成门极换向晶闸管三电平变频功率柜 |
JP4846638B2 (ja) * | 2007-03-26 | 2011-12-28 | 株式会社トプコン | 表面検査装置 |
JP2011135643A (ja) * | 2009-12-22 | 2011-07-07 | Toshiba Mitsubishi-Electric Industrial System Corp | 電力変換装置 |
CN201699569U (zh) * | 2010-04-22 | 2011-01-05 | 深圳市禾望电气有限公司 | 一种igbt功率模块*** |
JPWO2014057622A1 (ja) * | 2012-10-09 | 2016-08-25 | 富士電機株式会社 | 電力変換装置 |
CN104393739A (zh) * | 2014-11-03 | 2015-03-04 | 浙江海得新能源有限公司 | 一种功率柜散热*** |
CN212485324U (zh) * | 2020-06-19 | 2021-02-05 | 南京晟芯半导体有限公司 | 一种SiC MOSFET模块陶瓷覆铜板结构 |
CN214797400U (zh) * | 2021-04-16 | 2021-11-19 | 合肥中恒微半导体有限公司 | 一种高电流密度的igbt功率模块 |
CN113793841B (zh) * | 2021-09-16 | 2023-07-28 | 合肥工业大学 | 平衡多芯片并联功率模块电流的dbc基板结构 |
CN216216480U (zh) * | 2021-10-22 | 2022-04-05 | 株洲变流技术国家工程研究中心有限公司 | 一种风电变流器功率柜及风电变流器 |
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PB01 | Publication | ||
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20221108 Assignee: Anhui Xingtai Financial Leasing Co.,Ltd. Assignor: Hefei Zhongheng Micro Semiconductor Co.,Ltd. Contract record no.: X2024980005797 Denomination of invention: A DBC substrate for IGBT power modules Granted publication date: 20230124 License type: Exclusive License Record date: 20240517 |
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EE01 | Entry into force of recordation of patent licensing contract | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A DBC substrate for IGBT power modules Granted publication date: 20230124 Pledgee: Anhui Xingtai Financial Leasing Co.,Ltd. Pledgor: Hefei Zhongheng Micro Semiconductor Co.,Ltd. Registration number: Y2024980017926 |