CN115312455A - 一种薄晶圆散热片形成工艺 - Google Patents
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Abstract
本发明公开了一种薄晶圆散热片形成工艺,属于半导体领域。该方法包括以下步骤:晶圆正面键合玻璃载板,并在晶圆背面形成附着层和阻挡层,以及铜种子层;在晶圆背面涂布光阻层并进行黄光工艺,显影生成掩膜板图案,用光阻涂布方式保护晶粒间切割道;对晶圆背面进行电化学电镀工艺,在铜种子层上电镀上厚铜膜;将晶片翻转,在晶圆的背面键合第二玻璃载板,再移除第一玻璃载板;晶圆正面形成附着层和阻挡层,以及铜种子层;以厚铜膜做为掩膜,采用湿法蚀刻去除金属层,蚀刻停止在硅片表面;以厚铜膜做为掩膜,使用氟化硫或其他含氟电浆蚀刻晶粒间的切割道,蚀刻停止在粘合剂层;使用羟胺类光刻胶去除剂清洗蚀刻后残留在晶圆表面的残留物及聚合物。
Description
技术领域
本发明涉及半导体领域,具体涉及一种薄晶圆散热片形成工艺。
背景技术
半导体技术按照摩尔定理的发展,集成电路的密度越来越高,尺寸越来越小。所有集成电路在工作时都会发热,随着元件温度的提高,半导体元器件性能将会下降,甚至造成芯片损害。在一般电气电路中,电路的功耗较小,在正常的散热条件下,不用考虑芯片的散热问题。但是高压高电流或是高速电路中,芯片的功耗较大,需考虑散热因素,以保证芯片温度不超过允许工作温度,除了空气流场与外置冷却风扇的设计,散热片是一种方式。
镀薄的厚铜膜于晶圆背面,形成散热片可以有散热的功能,可以实现应用于一般的半导体元器件,对于要求更高散热效率的功率元件,如何在超薄的晶圆上有更厚的散热片仍然有其限制。因为超薄的晶圆上镀厚铜散热片,晶圆翘曲度更大,无法进行晶粒切割,故现有技术只可实现在厚度>150um晶圆上镀薄铜散热片后完成晶粒切割。
因此,提供一种薄晶圆散热片及其制作工艺,先切割晶粒后电镀,则可以在超薄晶圆上电镀10um~30um厚膜铜后才完成晶粒分离。
发明内容
针对现有技术的不足,本发明提出了一种薄晶圆散热片形成工艺。
本发明的目的可以通过以下技术方案实现:
一种薄晶圆散热片形成工艺,包括以下步骤:
晶圆正面键合第一玻璃载板,并在晶圆背面形成附着层和阻挡层,以及铜种子层;
在晶圆背面涂布光阻层并进行黄光工艺,显影生成掩膜板图案,用光阻涂布方式保护晶粒间切割道;
对晶圆背面进行电化学电镀工艺,在铜种子层上电镀上厚铜膜;
将晶片翻转,在晶圆的背面键合第二玻璃载板,再移除第一玻璃载板;
晶圆正面形成附着层和阻挡层,以及铜种子层;
在晶圆正面涂布光阻层并进行黄光工艺,显影生成掩膜板图案,用光阻涂布方式保护晶粒间切割道;
对晶圆正面进行电化学电镀工艺,在铜种子层上电镀上厚铜膜;
使用氧气电浆去除晶圆背面晶粒间切割道上的光阻层,使晶粒间的切割道露出来;
以厚铜膜做为掩膜,采用湿法蚀刻去除晶粒间切割道上的铜、镍、钛的金属层,蚀刻停止在硅片表面;
以厚铜膜做为掩膜,使用氟化硫或其他含氟电浆蚀刻晶粒间的切割道,蚀刻停止在粘合剂层;
使用羟胺类光刻胶去除剂清洗蚀刻后残留在晶圆表面的残留物及聚合物。
可选地,所述的附着层为钛层,阻挡层为镍层。
可选地,所述的钛层厚度为1-2微米,所述的镍层厚度为1-2微米。
可选地,厚铜膜的厚度为5-50微米。
可选地,使用有机溶剂去除晶圆背面晶粒间切割道上的光阻层。
本发明的有益效果:
本发明可安全无损的切割具铜散热结构的薄晶圆;本发明使用厚铜膜作为掩膜板,可以直接进行蚀刻,厚铜膜的厚度远远大于铜种子层、附着层和阻挡层的厚度,在蚀刻时,铜种子层、附着层和阻挡层蚀刻完成后厚铜膜的损耗极少;且厚铜模的与晶圆的蚀刻比约为1:100,可以直接以厚铜膜作为晶圆蚀刻的掩膜来进行晶粒切割,节省了工艺流程,提高了生产效率和成品率。
本发明通过两个玻璃载板交替承载,背面完成厚铜膜的布置后,翻转到晶圆的正面后,再次进行厚铜膜的形成工艺,实现晶圆双面散热片的布置。当双面的散热片布置完成后,可以直接进行晶粒的切割,过渡到模框上。
附图说明
下面结合附图对本发明作进一步的说明。
图1~4为本发明的工艺的流程示意图;
图5为图1中A处局部放大示意图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。
如图所示,一种薄晶圆散热片制作工艺:
包括以下步骤:
S1:在完成晶圆2正面工艺之后,使用粘合剂5将晶圆2正面与第一玻璃载板1键合;
S2:在晶圆2背面进行研磨和刻蚀;
S3:在晶圆2背面涂布光阻剂,对晶圆2背面进行黄光工艺和离子注入工艺;
S4:在晶圆2背面上通过溅镀工艺或蒸镀工艺之一依次生成附着层9和阻挡层8;
S5:在阻挡层8上通过溅镀工艺或蒸镀工艺之一生成铜种子层7;
S6:在晶圆2背面涂布光阻层4并进行黄光工艺,显影生成掩膜板图案,用光阻涂布方式保护晶粒间切割道;
S7:对晶圆2背面进行电化学电镀工艺,在铜种子层7上电镀上厚铜膜3;
S8:将晶圆2翻转,在晶圆2的背面键合第二玻璃载板1,再移除第一玻璃载板1;
S9:晶圆2正面形成附着层和阻挡层,以及铜种子层;
S10:在晶圆2正面涂布光阻层4并进行黄光工艺,显影生成掩膜板图案,用光阻涂布方式保护晶粒间切割道;
S11:对晶圆2正面进行电化学电镀工艺,在铜种子层7上电镀上厚铜膜;
S12:使用氧气电浆去除晶圆2背面晶粒间切割道上的光阻层,使晶粒间的切割道露出来;
S13:以厚铜膜3做为掩膜,采用湿法蚀刻去除晶粒间切割道上的铜、镍、钛的金属层,蚀刻停止在硅片表面;
S14:以厚铜膜3做为掩膜,使用氟化硫或其他含氟电浆蚀刻晶粒间的切割道,蚀刻停止在粘合剂层5;
使用羟胺类光刻胶去除剂清洗蚀刻后残留在晶圆表面的残留物及聚合物。
S15:将晶片翻转,使晶圆2背面附着在蓝膜框架6上;
S16:通过紫外线光照或热处理或镭射方式解离粘合剂层3释放层粘性,将玻璃载板1从晶圆2上移除;
S14:使用有机溶剂清洗晶圆2上的粘合剂层3,完成具有铜散热片的晶粒生产。
其中,具体地,晶圆2研磨后,晶圆2厚度为30-300微米。附着层为钛层,钛层厚度为1-2微米,阻挡层为镍层,镍层厚度为1-2微米。厚铜膜3的厚度为5-50微米。
使用有机溶剂去除晶圆2背面晶粒间切割道上的光阻层4。
采用本方案的薄晶圆散热片制作工艺制作得到的薄晶圆散热片。
本方案可安全无损的切割具铜散热结结构的薄晶圆;本方案使用厚铜膜作为掩膜板,可以直接进行蚀刻,厚铜膜的厚度远远大于铜种子层、附着层和阻挡层的厚度,在蚀刻时,铜种子层、附着层和阻挡层蚀刻完成后厚铜膜的损耗极少;且厚铜模的与晶圆的蚀刻比约为1:100,可以直接以厚铜膜作为晶圆蚀刻的掩膜来进行晶粒切割,节省了工艺流程,提高了生产效率和成品率。本方案解决了现有技术中无法在薄晶圆上布置足够厚度的散热片的问题。
在本说明书的描述中,参考术语“一个实施例”、“示例”、“具体示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不一定指的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上显示和描述了本发明的基本原理、主要特征和本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。
Claims (5)
1.一种薄晶圆散热片形成工艺,其特征在于,包括以下步骤:
晶圆正面键合第一玻璃载板,并在晶圆背面形成附着层和阻挡层,以及铜种子层;
在晶圆背面涂布光阻层并进行黄光工艺,显影生成掩膜板图案,用光阻涂布方式保护晶粒间切割道;
对晶圆背面进行电化学电镀工艺,在铜种子层上电镀上厚铜膜;
将晶片翻转,在晶圆的背面键合第二玻璃载板,再移除第一玻璃载板;
晶圆正面形成附着层和阻挡层,以及铜种子层;
在晶圆正面涂布光阻层并进行黄光工艺,显影生成掩膜板图案,用光阻涂布方式保护晶粒间切割道;
对晶圆正面进行电化学电镀工艺,在铜种子层上电镀上厚铜膜;
使用氧气电浆去除晶圆背面晶粒间切割道上的光阻层,使晶粒间的切割道露出来;
以厚铜膜做为掩膜,采用湿法蚀刻去除晶粒间切割道上的铜、镍、钛的金属层,蚀刻停止在硅片表面;
以厚铜膜做为掩膜,使用氟化硫或其他含氟电浆蚀刻晶粒间的切割道,蚀刻停止在粘合剂层;
使用羟胺类光刻胶去除剂清洗蚀刻后残留在晶圆表面的残留物及聚合物。
2.根据权利要求1所述的薄晶圆散热片形成工艺,其特征在于,所述的附着层为钛层,阻挡层为镍层。
3.根据权利要求2所述的薄晶圆散热片形成工艺,其特征在于,所述的钛层厚度为1-2微米,所述的镍层厚度为1-2微米。
4.根据权利要求1所述的薄晶圆散热片形成工艺,其特征在于,厚铜膜的厚度为5-50微米。
5.根据权利要求1所述的薄晶圆散热片形成工艺,其特征在于,使用有机溶剂去除晶圆背面晶粒间切割道上的光阻层。
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