CN115305572A - Single crystal material GaCuPO 5 Preparation method of (1) and single crystal material GaCuPO 5 - Google Patents

Single crystal material GaCuPO 5 Preparation method of (1) and single crystal material GaCuPO 5 Download PDF

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CN115305572A
CN115305572A CN202210790011.9A CN202210790011A CN115305572A CN 115305572 A CN115305572 A CN 115305572A CN 202210790011 A CN202210790011 A CN 202210790011A CN 115305572 A CN115305572 A CN 115305572A
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gacupo
single crystal
crystal material
temperature
precursor solution
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CN115305572B (en
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陈瑞
张坤
胡会吉
邱洋
雷前坤
李苍龙
涂友超
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Zhongyuan University of Technology
Xinyang Normal University
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Xinyang Normal University
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Abstract

The invention provides a single crystal material GaCuPO 5 The preparation method comprises adding CuCl 2 ·2H 2 O、Ga(NO 3 ) 3 ·xH 2 O、K 2 HPO 4 Adding the mixture into deionized water according to a preset proportion, and uniformly mixing and stirring to prepare a precursor solution; transferring the precursor solution into a high-pressure kettle, putting the high-pressure kettle into a heating box, heating to a preset temperature, keeping the preset temperature for a preset time period, and then cooling to room temperature; washing the reaction product in the high-pressure kettle to obtain a single crystal material GaCuPO 5 。

Description

Single crystal material GaCuPO 5 Preparation method of (1) and single crystal material GaCuPO 5
Technical Field
The invention relates to the technical field of single crystal growth, in particular to a single crystal material GaCuPO 5 Preparation method of (5) and single crystal material GaCuPO 5 。
Background
Low dimensional magnetic materials may exhibit anomalous physical properties due to the presence of spin quantum effects. The quantum effect of the low-dimensional magnetic material gradually increases as the temperature decreases. At a limited temperature, the mutual competition between quantum fluctuation and thermal fluctuation dominates the magnetic behavior in the system, so that the material presents an ordered state, such as spin disorder and spin liquid at a low temperature. These phenomena have abundant physical connotations and great research value. The physics contained behind the material has important significance for guiding the development and development of the next generation of spinning devices and electronic components, and is one of the leading hot spots in the current material science and condensed state physics research field. Due to the lack of ideal materials, the study of phenomena such as spin disorder and spin liquid is greatly restricted. The current research still depends on the simulation of theoretical calculation, and the breakthrough finding in the experiment is relatively less. In order to seek breakthrough, scientific research and engineering technicians gradually focus on the field of design, synthesis and preparation of low-dimensional magnetic materials, so that an ideal single crystal material is synthesized by an artificial method for research. Phosphate is an important carrier for designing and synthesizing novel magnetic materials because phosphate ions of the phosphate can bridge metal cations with magnetism.
On the other hand, the crystal material can realize magnetic, optical, acoustic, thermal and electric interaction and conversion, and is an important material indispensable in the development of modern science and technology. However, the natural crystal found in nature is far from meeting the requirements of the development of modern science and technology in terms of variety, quality, quantity and the like, thereby promoting the development of artificial crystal. In the field of solid microelectronics, along with the continuous improvement of science and technology, the demand of people on single crystal materials is gradually increased, and particularly in the fields of semiconductor crystals, laser crystals, scintillation crystals, optical crystals, super-hard crystals, insulating crystal piezoelectric crystals and the like, the discovery of new materials and the synthesis of new single crystals provide possibility for the subversive development of science and technology to a certain extent. Therefore, the design and synthesis of the crystal material are in the front of the scientific development of the material for a long time, and the research on the single crystal material is closely interfused and closely related with the research and development fields of new technologies such as space, electronics, laser, new energy development, biomedicine and the like.
Disclosure of Invention
The application provides a single crystal material GaCuPO 5 The preparation method of (1). The preparation method comprises adding CuCl 2 ·2H 2 O、Ga(NO 3 ) 3 ·xH 2 O、K 2 HPO 4 Adding the mixture into deionized water according to a preset proportion, and uniformly mixing and stirring to prepare a precursor solution; transferring the precursor solution into a high-pressure kettle, putting the high-pressure kettle into a heating box, heating to a preset temperature, keeping the temperature for a preset time period, and then cooling the temperature to room temperature; washing the reaction product in the high-pressure kettle to obtain the single crystal material GaCuPO 5 。
In one embodiment, the predetermined ratio is CuCl 2 ·2H 2 O、Ga(NO 3 ) 3 ·xH 2 O、K 2 HPO 4 According to the mol ratio of Cu, ga and P, the mol ratio is (0.8-1.2), (0.4-0.6) and (1.2-2.8).
In one embodiment, the molar ratio is 1.
In one embodiment, the CuCl 2 ·2H 2 O、Ga(NO 3 ) 3 ·xH 2 O、K 2 HPO 4 The mol ratio of the three to the deionized water is (0.5-1.5): (8 to 30).
In one embodiment, the preset temperature is any temperature value between 180 ℃ and 260 ℃; the preset time period is 2-4 days.
In one embodiment, the predetermined temperature is 220-230 ℃ and the predetermined time period is 2.8-3.2 days.
In one embodiment, after the precursor solution is transferred to the autoclave, the ratio of the height of the liquid level of the precursor solution to the height of the inner container of the autoclave is 8% to 12%.
In one embodiment, the temperature is reduced to room temperature at a cooling rate of (4-6) DEG C/h.
The application also provides a method for preparing the single crystal material GaCuPO by using the preparation method 5 。
In one embodiment, the single crystal material is GaCuPO 5 Is in the millimeter scale.
The single crystal material GaCuPO synthesized by the application 5 The requirements of current scientific research on single crystal materials can be met, and the method can be used for conventional measurement research on magnetism, heat, electricity and the like; the single crystal material GaCuPO 5 Air and water are inert, and the stability is stronger. These characteristics indicate that the single crystal material is GaCuPO 5 Has certain research value and application prospect in the fields of sound, light, electricity and magnetism.
Drawings
The objects, specific structural features and advantages of the present invention may be further understood by the following description in conjunction with the several embodiments of the present invention and the accompanying drawings.
FIG. 1 shows a single crystal material GaCuPO according to an embodiment of the present invention 5 A real object diagram of (1);
FIG. 2 shows a single crystal GaCuPO material according to an embodiment of the invention 5 X-ray diffraction pattern of the powder;
FIG. 3 shows a single crystal GaCuPO material according to an embodiment of the invention 5 An aerial view of the crystal structure of (a) in the a direction;
FIG. 4 shows a single crystal GaCuPO material according to an embodiment of the invention 5 An aerial view of the crystal structure of (a) in the direction of (b);
FIG. 5 shows a single crystal GaCuPO material according to an embodiment of the invention 5 An aerial view of the crystal structure of (a) in the c-direction;
FIG. 6 shows a single crystal GaCuPO material according to an embodiment of the invention 5 Specific heat data plot at zero magnetic field.
Detailed Description
Hereinafter, a detailed description will be given of embodiments of the present invention. While the invention will be illustrated and described in connection with these embodiments, it will be understood that it is not intended to limit the invention to these embodiments. On the contrary, the invention is intended to cover alternatives, modifications and equivalents, which may be included within the spirit and scope of the invention as defined by the appended claims.
Furthermore, in the following detailed description, numerous specific details are set forth in order to provide a better understanding of the invention. It will be understood by those skilled in the art that the present invention may be practiced without these specific details.
The application provides a single crystal material GaCuPO 5 The preparation method of (1). The preparation method comprises the following steps:
step (1), adding CuCl 2 ·2H 2 O、Ga(NO 3 ) 3 ·xH 2 O、K 2 HPO 4 Adding the mixture into deionized water according to a preset proportion, and uniformly mixing and stirring to prepare a precursor solution.
And (2) transferring the precursor solution into an autoclave, then placing the autoclave into a heating box, heating to a preset temperature, keeping the preset temperature for a preset time period, and then cooling the temperature to room temperature.
Step (3), washing the reaction product in the autoclave to obtain the single crystal material GaCuPO 5 。
Example 1
According to CuCl 2 ·2H 2 O、Ga(NO 3 ) 3 ·xH 2 O、K 2 HPO 4 Preparing a mixture according to a molar ratio of the mixture to deionized water of 1:10, the mixture was added to 4mL of deionized water, and stirred with a glass rod to dissolve the mixture sufficiently to prepare a precursor solution.
Transferring the precursor solution into an autoclave, keeping the ratio of the liquid level height of the precursor solution in the autoclave to the height of an inner container of the autoclave at 10%, putting the autoclave into a muffle furnace, heating to 230 ℃, keeping the temperature at 230 ℃ for 3 days, and then reducing the temperature to room temperature at a rate of 5 ℃ per hour. Wherein the autoclave is a stainless steel autoclave with 25mL of polytetrafluoroethylene as an inner container. The autoclave used in this example is a stainless steel autoclave with polytetrafluoroethylene as an inner container, and may be other types of autoclaves, which is not limited herein.
Washing the reaction product in the high pressure kettle with distilled water to obtain the single crystal material GaCuPO 5 。
FIG. 1 shows the synthesized single crystal GaCuPO of this example 5 A real object diagram of (1). Wherein, in figure 1, each small square is 1mm 2 . As can be seen from FIG. 1, the single crystal material GaCuPO 5 Is dark green. Through actual measurement, the single crystal material GaCuPO 5 The length of the glass can reach 1mm, namely the size is in millimeter level. Dimensionally, the single crystal material is GaCuPO 5 Can meet the requirements of current scientific research on single crystal materials, and can be used for conventional measurement research on magnetism, heat, electricity and the like. In addition, in the aspect of practical application, the single crystal material GaCuPO 5 Air and water are inert, and the stability is stronger. These characteristics indicate that the single crystal material is GaCuPO 5 Has certain research value and application prospect in the fields of sound, light and electricity.
Measurement of single crystal material GaCuPO by single crystal x-ray diffractometer 5 To obtain diffraction data. Analyzing the diffraction data by ShelxL software to obtain the single crystal material GaCuPO 5 Crystallographic data and crystal structure of (a). The crystallographic data are shown in tables 1 and 2. Wherein U (eq) in Table 2 is orthogonalized U ij One third of the tensor track. The crystal structure is shown in fig. 3-5. As can be seen from tables 1 and 2, the chemical formula of the synthesized single crystal material is GaCuPO 5 . Through comparison with a chemical database, the single crystal material GaCuPO 5 Is synthesized for the first time. The crystal structure of the single crystal material is an orthogonal structure, and the space group is P nnm With cell parameters of
Figure BDA0003733514640000052
According to the data, an XRD standard peak position card can be obtained through theoretical simulation.
TABLE 1 GaCuPO 5 Crystallographic data of single crystal material
Figure BDA0003733514640000051
Figure BDA0003733514640000061
TABLE 2 GaCuPO 5 Atomic coordinates and equivalent isotropic displacement parameters of
Figure BDA0003733514640000062
The single crystal material GaCuPO 5 Ground into a powder, and the powder was measured by a powder X-ray diffractometer to obtain an X-ray diffraction pattern, as shown in FIG. 2. As can be seen from fig. 2, the X-ray diffraction pattern is in good agreement with the XRD standard peak position card obtained by the above theoretical simulation, thereby further verifying that the analytic result of the ShelxL software is correct.
Next, the single crystal material GaCuPO was measured 5 Specific heat data at zero field, as shown in FIG. 6. As can be seen from FIG. 6, the single crystal material GaCuPO when the temperature T is above and below 17K 5 The specific heat behavior of (b) exhibits two different evolutionary trends. This indicates that the single crystal material GaCuPO 5 There may be lattice or magnetic interactions around 17K, causing thermal perturbations on a macroscopic scale.
In addition, gaCuPO 5 The magnetic ion of (A) is Cu 2+ The magnetic ion Cu 2+ By the cation O 2- Bridge, edge [001 ]]The crystal planes form a one-dimensional magnetic chain as shown in fig. 3 and 4. The magnetic ion Cu 2+ The chain structure is relatively simple (one-dimensional character) and may exhibit abundant physical properties at low temperatures. Furthermore, cu 2+ The low spin ion with S =1/2 has more significant quantum effect. Thus, the single crystal material GaCuPO 5 And is also an important candidate material for researching quantum magnetism.
Example 2
According to CuCl 2 ·2H 2 O、Ga(NO 3 ) 3 ·xH 2 O、K 2 HPO 4 Wherein the molar ratio of Cu, ga and P is 0.8: 0.4:2.2, 0.9:0.6: 1.1: 0.6:1.2, 1.1:0.45:2.8 and preparing a mixture according to a plurality of different proportions, wherein the molar ratio of the mixture to the deionized water is 1:10, adding the mixture into deionized water with a corresponding amount, and uniformly stirring by using a glass rod to fully dissolve the mixture so as to prepare a precursor solution.
The precursor solution was transferred to an autoclave, placed in a muffle furnace and heated to 230 ℃, held at a temperature of 230 ℃ for 3 days and then cooled to room temperature at a cooling rate of 5 ℃ per hour. Wherein the autoclave is a stainless steel autoclave with 25mL of polytetrafluoroethylene as an inner container.
Washing the reaction product in the high-pressure kettle with distilled water to obtain single crystal material GaCuPO 5 。
The reaction product synthesized in this example was confirmed to be a single crystal material GaCuPO by the verification method in example 1 5 . The difference is that the single crystal material GaCuPO of the embodiment 1 is used 5 In contrast, the single crystal material GaCuPO in example 2 5 The size of the crystal is small, and the crystal obtained under the condition of partial raw material proportion is difficult to distinguish even by naked eyes.
Example 3
According to CuCl 2 ·2H 2 O、Ga(NO 3 ) 3 ·xH 2 O、K 2 HPO 4 Preparing a mixture according to a molar ratio of the mixture to deionized water of 0.5: 9. 1: 5. 1.2: 15. 0.6: 20. 0.8: 25. or 1.3:30 and the like, adding the mixture into deionized water with a corresponding amount, and uniformly stirring by using a glass rod to fully dissolve the mixture so as to prepare a precursor solution.
The precursor solution was transferred to an autoclave, placed in a muffle furnace and heated to 230 ℃, held at a temperature of 230 ℃ for 3 days and then cooled to room temperature at a cooling rate of 5 ℃ per hour. Wherein the autoclave is a stainless steel autoclave with 25mL of polytetrafluoroethylene as an inner container.
Washing the reaction product in the high-pressure kettle with distilled water to obtain single crystal material GaCuPO 5 。
The reaction product synthesized in this example was confirmed to be a single crystal material GaCuPO by the verification method in example 1 5 . The difference is that the single crystal material GaCuPO of the embodiment 1 is used 5 In contrast, the single crystal material GaCuPO in example 3 5 Is smaller in size.
Example 4
According to CuCl 2 ·2H 2 O、Ga(NO 3 ) 3 ·xH 2 O、K 2 HPO 4 The molar ratio of Cu, ga and P is (1).
Transferring the precursor solution into a high-pressure autoclave, putting the high-pressure autoclave into an oven, heating the high-pressure autoclave to different temperatures of 180 ℃, 200 ℃, 210 ℃, 220 ℃, 230 ℃, 240 ℃, 250 ℃, 260 ℃ and the like, keeping the temperature for 3 days at the corresponding temperature, and then naturally cooling the high-pressure autoclave to room temperature. Wherein the autoclave is a stainless steel autoclave with 25mL of polytetrafluoroethylene as an inner container.
Washing the reaction product in the high pressure kettle with distilled water to obtain the single crystal material GaCuPO 5 。
The reaction product synthesized in this example was confirmed to be a single crystal material GaCuPO by the verification method in example 1 5 . The difference is that the single crystal material GaCuPO of the embodiment 1 is used 5 In contrast, the single crystal material GaCuPO in example 4 5 Is smaller in size.
Example 5
According to CuCl 2 ·2H 2 O、Ga(NO 3 ) 3 ·xH 2 O、K 2 HPO 4 Preparing a mixture according to a molar ratio of 1:0.5 of Cu, ga and P, adding the mixture into deionized water with a corresponding amount according to a proportional relation of the mixture and the deionized water, and uniformly stirring by using a glass rod to fully dissolve the mixture so as to prepare a precursor solution.
Transferring the precursor solution into an autoclave, putting the autoclave into an oven, heating the autoclave to 230 ℃, keeping the temperature at 230 ℃ for 2 days, 2.5 days, 2.8 days, 2.9 days, 3.1 days, 3.2 days, 3.5 days or 4 days, and then naturally cooling the autoclave to room temperature. Wherein the autoclave is a stainless steel autoclave with 25mL of polytetrafluoroethylene as an inner container.
Washing the reaction product in the high pressure kettle with distilled water to obtain the single crystal material GaCuPO 5 。
The reaction product synthesized in this example was confirmed to be a single crystal material GaCuPO by the verification method in example 1 5 . The difference is that the single crystal material GaCuPO of the embodiment 1 is used 5 In contrast, the single crystal material GaCuPO in example 5 5 Is small in size.
Example 6
According to CuCl 2 ·2H 2 O、Ga(NO 3 ) 3 ·xH 2 O、K 2 HPO 4 Preparing a mixture according to a molar ratio of 1:0.5 of Cu, ga and P, adding the mixture into deionized water with a corresponding amount according to a proportional relation of the mixture and the deionized water, and uniformly stirring by using a glass rod to fully dissolve the mixture so as to prepare a precursor solution.
Transferring the precursor solution into an autoclave, putting the autoclave into a muffle furnace, heating the muffle furnace to 230 ℃, keeping the muffle furnace at the temperature of 230 ℃ for 3 days, and then cooling the muffle furnace to room temperature at different cooling rates of 4 ℃/h, 4.5 ℃/h, 5.5 ℃/h, 6 ℃/h and the like. Wherein the autoclave is a stainless steel autoclave with 25mL of polytetrafluoroethylene as an inner container.
Washing the reaction product in the high pressure kettle with distilled water to obtain the single crystal material GaCuPO 5 。
The reaction product synthesized in this example was confirmed to be a single crystal material GaCuPO by the verification method in example 1 5 . The difference is that the single crystal material GaCuPO of the embodiment 1 is used 5 In contrast, the single crystal material GaCuPO in example 6 5 Is smaller in size.
The foregoing detailed description and drawings are merely illustrative of the present general inventive concept. It will be apparent that various additions, modifications and substitutions are possible without departing from the spirit and scope of the invention as defined in the accompanying claims. It will be appreciated by those skilled in the art that the present invention may be modified in form, structure, arrangement, proportions, materials, elements, components, and otherwise, used in the practice of the invention, with the specific environments and operating requirements being modified without departing from the principles of the present invention. Accordingly, the presently disclosed embodiments are meant to be illustrative only and not limiting, the scope of the invention being defined by the appended claims and their legal equivalents, rather than by the foregoing description.

Claims (10)

1. Single crystal material GaCuPO 5 The method for producing (a), characterized by comprising:
adding CuCl 2 ·2H 2 O、Ga(NO 3 ) 3 ·xH 2 O、K 2 HPO 4 Adding the mixture into deionized water according to a preset proportion, and uniformly mixing and stirring to prepare a precursor solution;
transferring the precursor solution into a high-pressure kettle, putting the high-pressure kettle into a heating box, heating to a preset temperature, keeping for a preset time period, and then cooling to room temperature; and
washing the reaction product in the high-pressure kettle to obtain a single crystal material GaCuPO 5 。
2. The single crystal material GaCuPO according to claim 1 5 Characterized in that the preset proportion is CuCl 2 ·2H 2 O、Ga(NO 3 ) 3 ·xH 2 O、K 2 HPO 4 According to the molar ratio of Cu, ga and P, and the molar ratio is (0.8-1.2): (0.4-0.6): 1.2-2.8).
3. The single crystal material GaCuPO according to claim 2 5 The preparation method of (1), wherein the molar ratio is 1.
4. The single crystal material GaCuPO of claim 1 5 Characterized in that CuCl 2 ·2H 2 O、Ga(NO 3 ) 3 ·xH 2 O、K 2 HPO 4 The molar ratio of the three to the deionized water is (0.5-1.5): (8E ^ e30)。
5. The single crystal material GaCuPO according to claim 1 5 The preparation method is characterized in that the preset temperature is any temperature value between 180 ℃ and 260 ℃; the preset time period is 2-4 days.
6. The single crystal material GaCuPO of claim 5 5 The preparation method is characterized in that the preset temperature is 220-230 ℃, and the preset time period is 2.8-3.2 days.
7. The single crystal material GaCuPO according to claim 1 5 The method for preparing (1) is characterized in that, after the precursor solution is transferred to the autoclave, the ratio of the height of the liquid level of the precursor solution to the height of the inner container of the autoclave is 8 to 12%.
8. The single crystal material GaCuPO of claim 1 5 The preparation method is characterized in that the temperature is reduced to room temperature according to the cooling rate of (4-6) DEG C/h.
9. A single crystal material GaCuPO as claimed in any one of claims 1 to 8 5 Preparation method of the single crystal material GaCuPO 5 。
10. The single crystal material GaCuPO according to claim 9 5 Characterized in that the single crystal material is GaCuPO 5 Is in the millimeter scale.
CN202210790011.9A 2022-07-06 2022-07-06 Monocrystalline material GaCuPO 5 Is prepared from monocrystalline material GaCuPO 5 Active CN115305572B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1485398A (en) * 1974-11-22 1977-09-08 Matsushita Electric Ind Co Ltd Method of making fibrous alkali metal titanates
CN101619495A (en) * 2008-07-01 2010-01-06 南京理工大学 Method for thermally preparing single-crystal bismuth trisulfide nano-wires from mixed solvent
CN104058461A (en) * 2014-07-04 2014-09-24 武汉理工大学 Low-temperature preparation method for CuFeO2 crystal material of delafossite structure
CN107098401A (en) * 2017-06-02 2017-08-29 武汉理工大学 A kind of delafossite structure CuCoO2Crystalline material and its low temperature preparation method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1485398A (en) * 1974-11-22 1977-09-08 Matsushita Electric Ind Co Ltd Method of making fibrous alkali metal titanates
CN101619495A (en) * 2008-07-01 2010-01-06 南京理工大学 Method for thermally preparing single-crystal bismuth trisulfide nano-wires from mixed solvent
CN104058461A (en) * 2014-07-04 2014-09-24 武汉理工大学 Low-temperature preparation method for CuFeO2 crystal material of delafossite structure
CN107098401A (en) * 2017-06-02 2017-08-29 武汉理工大学 A kind of delafossite structure CuCoO2Crystalline material and its low temperature preparation method

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