CN115295662A - Avalanche photodetector and preparation method thereof - Google Patents
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 102
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 102
- 239000010703 silicon Substances 0.000 claims abstract description 102
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 66
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 66
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000005468 ion implantation Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 10
- -1 phosphorus ions Chemical class 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 150000002500 ions Chemical group 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 230000007547 defect Effects 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 7
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- 238000006243 chemical reaction Methods 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 3
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
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- 238000003199 nucleic acid amplification method Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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Abstract
The invention provides an avalanche photodetector which comprises a silicon substrate, wherein buried layer silicon oxide is formed on the silicon substrate, a silicon table area is formed on the buried layer silicon oxide, silicon contact areas are formed on the buried layer silicon oxide on two sides of the silicon table area, a germanium epitaxial layer is formed on the silicon table area, a first electrode is in ohmic contact with the germanium epitaxial layer, and a second electrode is in ohmic contact with the silicon contact areas. In the avalanche photodetector, the area of the germanium epitaxial layer is smaller than that of the silicon mesa region, right-angle structures are etched on the same side of the germanium epitaxial layer and the silicon mesa region, and a light incoming side is arranged on the opposite side of the right-angle structures of the germanium epitaxial layer and the silicon mesa region. The avalanche photodetector has the advantages of high absorption efficiency, small size, easiness in integration, better loss uniformity, good thermal stability after heating control, capability of being integrated with an active device, strong radiation resistance and easiness in packaging. The invention also provides a preparation method of the avalanche photodetector, and the method has the advantages of simple operation and good repeatability.
Description
Technical Field
The invention relates to the field of semiconductor photoelectric devices, in particular to an avalanche photodetector and a preparation method thereof.
Background
The photodetector is an important photoelectric device for converting an incident radiation signal into an electrical signal and outputting the electrical signal, and is an important component of a photoelectric system. The development of the photoelectric detection device is very rapid because the photoelectric detection device has important application in national defense and people's life. With the development of science and technology, various novel photoelectric materials are continuously emerging, and meanwhile, due to the improvement of a manufacturing process, the performance of a photoelectric detector is greatly improved. The photoelectric detector can transmit optical fiber signals and also can transmit electric signals in a combined manner in an optical communication system, and has the advantages of high transmission speed, high capacity and the like.
The avalanche photodetector is used as a detector applied to weak light detection, has the advantages of high multiplication factor, high absorption efficiency, good pressure resistance, long service life and the like, and has very important application in the aspects of optical communication, laser radar and the like. The avalanche photodetector adopts a preparation method compatible with a CMOS process, and has the advantages of easy integration with a large-area single chip of a microelectronic circuit and easy formation of a large-area linear array and an area array system. The avalanche photodetector converts an incident light signal into photoelectrons in a semiconductor device by utilizing a photoelectric effect and can perform avalanche type amplification on the photoelectrons through an avalanche breakdown process, so that the avalanche photodetector has the outstanding advantages of high responsivity, high response speed, small size and the like. Due to the advantages of the avalanche photodetector, the avalanche photodetector is very sensitive to the response of light, and the working distance of a photoelectric detection system is greatly increased, so that the avalanche photodetector is widely applied to the fields of laser ranging, laser guidance, laser radar systems and the like.
In recent years, silicon-based electronics develops rapidly and is completely compatible with integrated circuits, the cost of a silicon-based optoelectronic chip is reduced in the future, and the application market of silicon-based optoelectronic products is very large. The prior art integrates germanium materials with silicon, and the germanium materials are widely applied as absorption layer materials of silicon-based photoelectric detectors, but have a series of problems of low absorption efficiency, large dark current and the like. How to provide a germanium-silicon avalanche photodetector with high absorption efficiency is a problem to be solved urgently.
Disclosure of Invention
In order to overcome the defects in the problems, the invention provides an avalanche photodetector. The avalanche photodetector comprises a silicon substrate, buried silicon oxide is formed on the silicon substrate, a silicon table area is formed on the buried silicon oxide, silicon contact areas are formed on the buried silicon oxide on two sides of the silicon table area, a germanium epitaxial layer is formed on the silicon table area, ion implantation is respectively carried out on the silicon contact areas and the germanium epitaxial layer, a first electrode is in ohmic contact with the germanium epitaxial layer, and a second electrode is in ohmic contact with the silicon contact areas. In the avalanche photodetector, the area of the germanium epitaxial layer is smaller than that of the silicon mesa region, right-angle structures are etched on the same side of the germanium epitaxial layer and the silicon mesa region, and a light incoming side is arranged on the opposite side of the right-angle structures of the germanium epitaxial layer and the silicon mesa region.
As a further improvement of the invention, the surface of the germanium epitaxial layer is subjected to ion implantation, and boron ions are implanted to form p ++ A type-doped region; and depositing metal on the surface of the germanium epitaxial layer to form a first electrode.
As a further improvement of the invention, the surface of the silicon contact area is subjected to ion implantation, and phosphorus ions are implanted to form n ++ A type-doped region; and depositing metal on the surface of the silicon contact region to form a second electrode.
As a further improvement of the invention, the avalanche photodetector further comprises a dielectric film, and the surfaces of the silicon contact region, the silicon mesa region and the germanium epitaxial layer are covered by the dielectric film. The dielectric film is made of a material selected from: silicon oxide or silicon nitride.
The present invention also provides a method of preparing the avalanche photodetector described above, the method comprising:
step 5, covering a dielectric film on the surface of the germanium epitaxial layer, and corroding the dielectric film above the silicon contact area and the germanium epitaxial layer to form a contact hole;
and 7, performing thermal annealing treatment.
As a further improvement of the present invention, the thickness of the SOI material in step 1 is 220nm.
As a further improvement of the invention, in the step 2, phosphorus ions are implanted by ion implantation with the doping concentration of 1 multiplied by 10 17 cm -3 。
As a further improvement of the invention, in the step 4, boron ions are implanted by ion implantation, and the doping concentration is 1 multiplied by 10 19 cm -3 。
As a further development of the invention, the material of the media membrane in steps 3 and 5 is selected from: silicon oxide or silicon nitride.
Compared with the prior art, the invention has the following beneficial effects:
the avalanche photodetector provided by the invention has the advantages that the introduction of right-angle reflection of a right-angle structure and the parallel transmission of light improve the light absorption efficiency of the detector; and because the avalanche multiplication region formed in the silicon mesa region is a large electric field, and the germanium epitaxial layer serving as a light absorption region is a small electric field, the detector reduces dark current and increases photoelectric conversion efficiency while absorbing various lights, thereby improving light absorption efficiency and responsivity.
Drawings
FIG. 1 is an x-z front view of an avalanche photodetector according to an embodiment of the present invention
FIG. 2 is a schematic top view of an x-y axis of an avalanche photodetector without a dielectric film shown in accordance with an embodiment of the present invention;
FIG. 3 is a schematic diagram of light propagation of an avalanche photodetector, in accordance with an embodiment of the present invention;
fig. 4 is a schematic diagram of a simulation structure and an electric field distribution of an avalanche photodetector according to an embodiment of the present invention.
In the figure:
1, a substrate; 2 buried layer of silicon oxide; 3 a silicon contact region; 4 a second electrode; 5 a silicon mesa region; 6, a germanium epitaxial layer; 7 a first electrode; 8, dielectric film; 9 ports.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
The invention is described in further detail below with reference to the attached drawing figures:
as shown in fig. 1, the present invention provides an avalanche photodetector, which includes a silicon substrate 1, a buried silicon oxide 2 formed on the silicon substrate 1, a silicon mesa region 5 formed on the buried silicon oxide 2, and silicon contact regions 3 formed on the buried silicon oxide 2 on both sides of the silicon mesa region 5. A germanium epitaxial layer 6 is formed on the silicon mesa region 5, ion implantation is carried out on the surface of the germanium epitaxial layer 6, and boron ions are implanted to form p ++ And (3) forming a first electrode 7 by depositing metal on the surface of the germanium epitaxial layer 6, wherein the first electrode 7 is in ohmic contact with the germanium epitaxial layer 6. Ion implantation is carried out on the surface of the silicon contact region 3, and phosphorus ions are implanted to form n ++ A type-doped region and is deposited on the surface of the silicon contact region 3The second electrode 4 is formed by depositing metal, and the second electrode 4 is in ohmic contact with the silicon contact region 3. A potential difference is formed between the first electrode 7 and the second electrode 4, and photoelectric conversion is realized. As shown in fig. 2, in the avalanche photodetector, the area of the germanium epitaxial layer 6 is smaller than that of the silicon mesa region 5, a right-angle structure is etched on the same side of the germanium epitaxial layer 6 and the silicon mesa region 5, and the opposite side of the right-angle structure of the germanium epitaxial layer 6 and the silicon mesa region 5 is the light incoming side. The right-angle structure of the germanium epitaxial layer 6 and the silicon mesa region 5 can effectively increase the light absorption, effectively reduce the dark current of the avalanche photodetector and improve the photoelectric conversion efficiency. The avalanche photodetector also comprises a dielectric film 8, and the surfaces of the silicon contact area 3, the silicon mesa area 5 and the germanium epitaxial layer 6 are covered by the dielectric film 8; the material of the dielectric film 8 may be selected from: silicon oxide or silicon nitride. The dielectric film 8 can effectively prevent light from dispersing and improve light absorption efficiency.
The working principle of the avalanche photodetector is as follows:
as shown in fig. 3, the port 9 is connected to the light incoming side of the germanium epitaxial layer 6 and the silicon mesa region 5, a light signal is input from the port 9, the light signal is transmitted in the germanium epitaxial layer 6 and the silicon mesa region 5, and when the light signal passes through the right-angle structure of the germanium epitaxial layer 6 and the silicon mesa region 5, multiple reflections can be performed due to proper angles, so that the light absorption efficiency of the germanium epitaxial layer 6 as an absorption region can be increased. Under the action of an external voltage, a photon-generated carrier is transported to a doping region of the micro-ring to generate a photon-generated electron hole pair which can move freely, current can be generated by being led out through an electrode, and the photon-generated carrier can be rapidly driven to the two poles by a P/N junction structure formed by doping under the bias voltage, so that an electric signal is formed. As shown in FIG. 4, the avalanche photodetector also displays the electric field distribution of the longitudinal section in the waveguide through a simulation structure schematic diagram, the avalanche multiplication region formed in the silicon mesa region 5 is a large electric field, the electric field of the avalanche multiplication region is basically above 300Kv/cm, the germanium epitaxial layer 6 as a light absorption region is a small electric field, and the electric field of the light absorption region is basically below 100Kv/cm, so that the detector reduces dark current and increases photoelectric conversion efficiency while absorbing various lights, thereby improving light absorption efficiency and responsivity. The avalanche photodetector is designed for silicon-based/SOI devices, but can also be applied to devices with different substrate layer materials. The avalanche photodetector is suitable for designing the structure of the photodetector with high absorption efficiency and high integration. A method of making the avalanche photodetector described above, the method comprising:
step 5, covering a dielectric film 8 on the surface of the germanium epitaxial layer 6, and corroding the dielectric film 8 above the silicon contact region 3 and the germanium epitaxial layer 6 to form a contact hole;
and 7, drying and performing RTA rapid annealing to form an alloy.
And (4) conclusion:
1. the avalanche photodetector disclosed by the invention utilizes the light propagation coupling performance of the waveguide, combines the waveguide with the incident surface and the refraction surface of the device, integrates the heterojunction epitaxy technology, improves the light absorption coefficient and realizes high responsivity of photoelectric detection.
2. The avalanche photodetector disclosed by the invention has the advantages of small size, easiness in integration, better loss uniformity, good thermal stability after heating control, capability of being integrated with an active device, strong radiation resistance and easiness in packaging.
3. The preparation method of the avalanche photodetector disclosed by the invention has the advantages of simple operation and good repeatability, and is suitable for batch production.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. An avalanche photodetector comprises a silicon substrate, and is characterized in that a buried silicon oxide is formed on the silicon substrate, a silicon mesa region is arranged on the buried silicon oxide, silicon contact regions are formed on the buried silicon oxide on two sides of the silicon mesa region, a germanium epitaxial layer is arranged on the silicon mesa region, ion implantation is respectively carried out on the silicon contact region and the germanium epitaxial layer, a first electrode is arranged to be in ohmic contact with the germanium epitaxial layer, a second electrode is arranged to be in ohmic contact with the silicon contact region,
the area of the germanium epitaxial layer is smaller than that of the silicon mesa area, right-angle structures are etched on the same sides of the germanium epitaxial layer and the silicon mesa area, and the opposite side of the germanium epitaxial layer and the right-angle structure of the silicon mesa area is a light incoming side.
2. The avalanche photodetector of claim 1 wherein the germanium epitaxial layer is ion implanted into the surface thereof to form p ++ And a type doped region.
3. The avalanche photodetector of claim 1, whereinImplanting ions into the surface of the silicon contact region to form n ++ And a type-doped region.
4. The avalanche photodetector of claim 1, further comprising a dielectric film, the silicon contact region, the silicon mesa region and the surface of the germanium epitaxial layer being covered by the dielectric film.
5. A method of preparing the avalanche photodetector as claimed in any one of claims 1 to 4, wherein the method includes:
step 1, arranging buried layer silicon oxide on a silicon substrate to form an SOI material, etching the SOI material to form a silicon mesa region, and forming ion implantation regions on two sides of the silicon mesa region, wherein the other side surface of the silicon mesa region is a light transmitting side surface, and the other side surface opposite to the light transmitting side surface of the silicon mesa region is etched to form a right angle;
step 2, carrying out ion implantation on the ion implantation area to form a silicon contact area;
step 3, covering a dielectric film on the surfaces of the silicon mesa area and the silicon contact area, and etching the dielectric film above the silicon mesa area to expose a germanium epitaxial area;
step 4, epitaxially growing a germanium epitaxial layer on the exposed germanium epitaxial region, wherein the area of the germanium epitaxial layer is smaller than that of the silicon mesa region, a right-angle structure is also etched on the same side of the germanium epitaxial layer and the right-angle structure of the silicon mesa region, and the opposite side of the right-angle structure of the germanium epitaxial layer is a light incoming side; performing ion implantation on the germanium epitaxial layer, performing high-temperature annealing, repairing implantation defects, and activating implanted ions;
step 5, covering a dielectric film on the surface of the germanium epitaxial layer, and corroding the dielectric film above the silicon contact area and the germanium epitaxial layer to form a contact hole;
step 6, depositing a metal layer, and etching the metal layer to form an electrode in the contact hole;
and 7, performing thermal annealing treatment.
6. The method of claim 5, wherein the thickness of the SOI material in step 1 is 220nm.
7. The method of claim 5, wherein the step 2 is performed by ion implantation, and implanting phosphorus ions with a doping concentration of 1 x 10 17 cm -3 。
8. The method of claim 5, wherein the step 4 comprises implanting boron ions with a doping concentration of 1 x 10 by ion implantation 19 cm -3 。
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