CN115295646A - High-performance light detector chip epitaxial wafer - Google Patents

High-performance light detector chip epitaxial wafer Download PDF

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Publication number
CN115295646A
CN115295646A CN202210966917.1A CN202210966917A CN115295646A CN 115295646 A CN115295646 A CN 115295646A CN 202210966917 A CN202210966917 A CN 202210966917A CN 115295646 A CN115295646 A CN 115295646A
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layer
type
doping concentration
thickness
epitaxial wafer
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徐鹏飞
王岩
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Wuxi Huaxing Optoelectronics Research Co ltd
Jiangsu Huaxing Laser Technology Co ltd
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Wuxi Huaxing Optoelectronics Research Co ltd
Jiangsu Huaxing Laser Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

The invention discloses a high-performance light detector chip epitaxial wafer which comprises an InP substrate layer and an epitaxial layer, wherein the InP substrate layer is provided with the epitaxial layer, and the epitaxial layer comprises a buffer layer, a first collection layer, a second collection layer, a lower waveguide layer, a cliff layer, a lower transition layer, an upper transition layer, a P-type multi-quantum well absorption layer, an upper waveguide layer, a P-type barrier layer, a P-type cover layer and a P-type contact layer. The invention utilizes the flexible energy band engineering of a III-V multi-component system and utilizes the design of a P-type majority carrier absorption layer, the design of a carrier diffusion barrier layer and the design of a transition layer and a collection layer to adjust an electric field, thereby enhancing the contribution of electron current to the photoelectric current, avoiding a plurality of adverse effects caused by the slow motion speed of a hole, enhancing the photon limitation in the waveguide by introducing an upper waveguide layer and a lower waveguide layer, and improving the responsivity of the detector.

Description

High-performance light detector chip epitaxial wafer
Technical Field
The invention belongs to the technical field of semiconductor optoelectronic devices, and particularly relates to a high-performance photodetector chip epitaxial wafer.
Background
The semiconductor photoelectric detector is an ideal photoelectric detector because of small volume, high sensitivity, fast response speed and easy integration, and is widely applied to the fields of optical fiber communication, sensing systems, high-energy physics, nuclear medicine and the like, the PIN photoelectric diode is a detector which adds a lightly doped intrinsic region between pn diodes, the internal electric field spanning two ends changes along with the change of the surface distance from the diode, the electric field of the PIN photoelectric diode in the intrinsic region is very strong, when a photon is absorbed in the region, the photon energy is converted to new carriers (electron and hole pairs), the newly generated carriers drift to different directions (the electron faces to the n region and the hole faces to the P region) under the action of the electric field according to the own polarity, and the photoelectric current is generated when external circuits are connected.
The single carrier high speed detector is a new type of high speed detector, in the large capacity optical fiber communication system and the ultra high speed test system, the photodiode which can satisfy the requirement of high response speed and high saturation output power at the same time is becoming the focus of people's attention, because the performance of the optical receiver which is composed of such photodiode and optical amplifier is superior to the optical receiver which is composed of common photodiode (pin-PD) and post-positioned electrical amplifier, so that the electrical amplifier can be saved, the bandwidth is expanded and the structure of the receiver is simplified, as a new type of photoelectric detector, the unique working mode and the characteristics of high speed and high saturation output are more and more concerned by people in the professional technical research field, industry and industry, and has very wide market prospect, and at present, the research and development application of some research institutions represented by the Japanese NTT photon laboratory in abroad to high saturation output and high speed InGaAsPD have made considerable progress.
In order to overcome the problem, a single-row carrier structure is adopted, the UTC-PD is composed of a p-type neutral InGaAs light absorption layer and an n-type wide-band gap InP assembly layer, the depletion assembly layer and the light absorption layer are completely separated in space, photo-generated electron-hole pairs generated in the absorption layer are diffused to two ends of the absorption layer at the same time, and a p-type diffusion blocking layer close to the anode end prevents electrons from diffusing to the anode, so that the electrons are diffused only in the direction of the assembly layer, namely, a single row of electrons are formed.
When the absorption layer diffuses electrons to the collection layer, the electrons pass through the collection layer at a high speed (4 x 107 cm/s) under the action of an internal electric field established by a heterointerface conduction band barrier due to an overshoot effect, photogenerated holes in the absorption layer are used as majority carriers, the dielectric relaxation time of the electrons is very short, the influence on the working speed of the photoelectric tube is negligible, the UTC-PD is quite different from the traditional pin-PD in that the bandwidth of the UTC-PD is determined by the diffusion time of the electrons in the absorption layer and the drift time of the collection layer when the collection layer is thin enough, the delay time of the electrons in the collection layer is about 0.2-0.4 ps, the value is negligible compared with the response time t of the absorption layer, the bandwidth of the UTC-PD is mainly determined by the diffusion time of the electrons in the absorption layer, and the diffusion time of the electrons is longer than the drift time of the electrons, so that the speed performance of the UTC-PD can be improved by using the built-in-field to transport the drift component of the electrons, and the electrons can move to the collection layer more quickly.
In order to realize ultra-high speed operation of the UTC-PD, the characteristic that the electron speed in the junction layer is overshot is fully utilized, the overshoot speed of electrons is about one order of magnitude higher than the saturation speed of holes, and the space charge effect in the depletion layer is effectively inhibited, so that the UTC-PD still has high output saturation current at high operation speed compared with the pin-PD, and high-speed and high-saturation output performance can still be maintained even under the condition of low bias voltage, which is attributed to the fact that the depletion layer is in a relatively low electric field.
The existing UTC-PD structure has no waveguide limiting layer, and the detector is also mainly used for a planar detector, is not suitable for monolithic integration application and is not suitable for a waveguide detector.
Therefore, in view of the above technical problems, it is necessary to provide a high-performance photodetector chip epitaxial wafer.
Disclosure of Invention
The invention aims to provide a high-performance light detector chip epitaxial wafer to solve the problems.
In order to achieve the above object, an embodiment of the present invention provides the following technical solutions:
a high performance photodetector chip epitaxial wafer, comprising: an InP substrate layer and an epitaxial layer;
the InP substrate layer is provided with an epitaxial layer, the epitaxial layer comprises a buffer layer, a first collecting layer, a second collecting layer, a lower waveguide layer, a cliff layer, a lower transition layer, an upper transition layer, a P-type multi-quantum well absorption layer, an upper waveguide layer, a P-type blocking layer, a P-type cover layer and a P-type contact layer, and the buffer layer, the first collecting layer, the second collecting layer, the lower waveguide layer, the cliff layer, the lower transition layer, the upper transition layer, the P-type multi-quantum well absorption layer, the upper waveguide layer, the P-type blocking layer, the P-type cover layer and the P-type contact layer are sequentially arranged.
Further, the InP substrate layer is semi-insulating or N-type, the semi-insulating is a doped iron substrate, and the N doping concentration is more than 1x10 18 cm -3 The thickness is 100-400 microns.
Further, the doping concentration of the buffer layer is 1x10 18 cm -3 The thickness of the first collecting layer is 0.2-0.5 microns, the first collecting layer is made of n-type high-doped InP materials, the thickness of the first collecting layer is 50-100nm, and the doping concentration is larger than 3x10 18 cm -3 。
Further, the second collecting layer is made of n-type low-doped InP material, the thickness of the second collecting layer is 200-300nm, and the doping concentration is 4x10 16 cm -3 Left and right.
Further, the lower waveguide layer is made of n-type low-doped InGaAsP material, the thickness is 100-150nm, and the doping concentration is 2x10 16 cm -3 The cliff layer is made of n-type InP material with thickness of 5-15nm and doped with high concentrationDegree of 1x10 18 cm -3 Left and right.
Further, the lower transition layer is made of i-type InGaAsP material, the thickness is 10-20nm, and the doping concentration is 1x10 15 cm -3 The upper transition layer is made of i-type InGaAs material, the thickness is 5-15nm, and the doping concentration is 1x10 15 cm -3 Left and right.
Further, the P-type multiple quantum well absorption layer is InGaAs/InGaAsP multiple quantum well material, and the doping concentration of the P-type doped multiple quantum well absorption layer is 1x10 18 cm -3 The total thickness is 50-100nm.
Further, the upper waveguide layer is made of p-type low-doped InGaAsP material, the thickness is 100-150nm, and the doping concentration is 2x10 16 cm -3 And the P-type barrier layer is made of P-type InGaAsP material with the doping concentration larger than 1x10 19 cm -3 The total thickness is 20-30nm.
Further, the P-type cover layer is made of P-type InP material, and the doping concentration is greater than 5x10 18 cm -3 And the total thickness is 1 micron.
Furthermore, the P-type contact layer is made of P-type InGaAs material with doping concentration greater than 2x10 19 cm -3 The total thickness is 100-200nm.
Compared with the prior art, the invention has the following advantages:
the invention utilizes the flexible energy band engineering of a III-V multi-component system and utilizes the design of a P-type majority carrier absorption layer, the design of a carrier diffusion barrier layer and the design of a transition layer and a collection layer to adjust an electric field, thereby enhancing the contribution of electron current to the photoelectric current, avoiding a plurality of adverse effects caused by the slow motion speed of a hole, enhancing the photon limitation in the waveguide by introducing an upper waveguide layer and a lower waveguide layer, and improving the responsivity of the detector.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic diagram of a high-performance photodetector chip epitaxial wafer according to an embodiment of the present invention.
In the figure: the semiconductor device comprises an InP substrate layer, a 2 epitaxial layer, a 201 buffer layer, a 202 first collecting layer, a 203 second collecting layer, a 204 lower waveguide layer, a 205 cliff layer, a 206 lower transition layer, a 207 upper transition layer, a 208.P type multi-quantum well absorption layer, a 209 upper waveguide layer, a 210.P type blocking layer, a 211.P type cover layer and a 212.P type contact layer.
Detailed Description
The present invention will be described in detail below with reference to embodiments shown in the drawings. The present invention is not limited to the embodiments, and structural, methodological or functional changes made by those skilled in the art according to the embodiments are included in the scope of the present invention.
The invention discloses a high-performance light detector chip epitaxial wafer, which is shown in a reference figure 1 and comprises the following components: an InP substrate layer 1 and an epitaxial layer 2.
Referring to fig. 1, an epitaxial layer 2 is disposed on the InP substrate layer 1, the epitaxial layer 2 includes a buffer layer 201, a first collection layer 202, a second collection layer 203, a lower waveguide layer 204, a cliff layer 205, a lower transition layer 206, an upper transition layer 207, a P-type multiple quantum well absorption layer 208, an upper waveguide layer 209, a P-type barrier layer 210, a P-type cap layer 211, and a P-type contact layer 212, and the buffer layer 201, the first collection layer 202, the second collection layer 203, the lower waveguide layer 204, the cliff layer 205, the lower transition layer 206, the upper transition layer 207, the P-type multiple quantum well absorption layer 208, the upper waveguide layer 209, the P-type barrier layer 210, the P-type cap layer 211, and the P-type contact layer 212 are sequentially disposed.
Referring to fig. 1, the InP substrate layer 1 is semi-insulating or N-type, the semi-insulating is a doped iron substrate, and the N doping concentration is greater than 1 × 10 18 cm -3 Thickness of 100-400 μm
Referring to fig. 1, the doping concentration of the buffer layer 201 is 1 × 10 18 cm -3 The thickness is 0.2-0.5 microns, the first collection layer 202 is an n-type highly doped InP material, the thickness is 50-100nm, and the doping concentration is more than 3x10 18 cm -3 。
Referring to fig. 1, the second collection layer 203 is an n-type low-doped InP material with a thickness of 200-300nm and a doping concentration of 4 × 10 16 cm -3 Left and right.
Referring to fig. 1, the lower waveguide layer 204 is made of n-type low-doped InGaAsP material with a thickness of 100-150nm and a doping concentration of 2 × 10 16 cm -3 On the left and right, the cliff layer 205 is an n-type InP material with the thickness of 5-15nm and the doping concentration of 1x10 18 cm -3 Left and right.
Referring to fig. 1, the lower transition layer 206 is i-type InGaAsP material with a thickness of 10-20nm and a doping concentration of 1 × 10 15 cm -3 On the left and right, the upper transition layer 207 is i-type InGaAs material, the thickness is 5-15nm, and the doping concentration is 1x10 15 cm -3 Left and right.
Referring to fig. 1, the P-type multiple quantum well absorption layer 208 is InGaAs/InGaAsP multiple quantum well material, and the doping concentration of the P-type doped multiple quantum well absorption layer is 1x10 18 cm -3 The total thickness is 50-100nm.
Referring to fig. 1, the upper waveguide layer 209 is made of p-type low-doped InGaAsP material with a thickness of 100-150nm and a doping concentration of 2 × 10 16 cm -3 On the left and right sides, the P-type blocking layer 210 is a P-type InGaAsP material with a doping concentration greater than 1x10 19 cm -3 The total thickness is 20-30nm.
Referring to fig. 1, the P-type cap layer 211 is P-type InP material with a doping concentration greater than 5 × 10 18 cm -3 And the total thickness is 1 micron.
Referring to fig. 1, the P-type contact layer 212 is a P-type InGaAs material and has a doping concentration greater than 2 × 10 19 cm -3 The total thickness is 100-200nm.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.

Claims (10)

1. A high performance photodetector chip epitaxial wafer, comprising:
an InP substrate layer (1);
the epitaxial layer (2) is arranged on the InP substrate layer (1), the epitaxial layer (2) comprises a buffer layer (201), a first collection layer (202), a second collection layer (203), a lower waveguide layer (204), a cliff layer (205), a lower transition layer (206), an upper transition layer (207), a P-type multi-quantum well absorption layer (208), an upper waveguide layer (209), a P-type blocking layer (210), a P-type cover layer (211) and a P-type contact layer (212), and the buffer layer (201), the first collection layer (202), the second collection layer (203), the lower waveguide layer (204), the cliff layer (205), the lower transition layer (206), the upper transition layer (207), the P-type multi-quantum well absorption layer (208), the upper waveguide layer (209), the P-type blocking layer (210), the P-type cover layer (211) and the P-type contact layer (212) are sequentially arranged.
2. A high performance photodetector chip epitaxial wafer according to claim 1, characterized in that the InP substrate layer (1) is semi-insulating or N-type, semi-insulating is doped iron substrate, N doping concentration is more than 1x10 18 cm -3 Thickness of 100-400 microns.
3. A high performance photo-detector chip epitaxial wafer according to claim 1, characterized in that the doping concentration of the buffer layer (201) is 1x10 18 cm -3 0.2-0.5 μm thick, the first collection layer (202) is an n-type highly doped InP material with a thickness of 50-100nm and a doping concentration greater than 3x10 18 cm -3 。
4. A high performance photodetector chip epitaxial wafer according to claim 1, characterized in that the second collection layer (203) is of n-type low doped InP material with a thickness of 200-300nm and a doping concentration of 4x10 16 cm -3 Left and right.
5. The high-performance photodetector chip epitaxial wafer as claimed in claim 1, wherein the lower waveguide layer (204) is n-type low-doped InGaAsP material with thickness of 100-150nm and doping concentration of 2x10 16 cm -3 The cliff layer (205) is an n-type InP material with the thickness of 5-15nm and the doping concentration of 1x10 18 cm -3 Left and right.
6. The high-performance photodetector chip epitaxial wafer as claimed in claim 1, wherein the lower transition layer (206) is i-type InGaAsP material with thickness of 10-20nm and doping concentration of 1x10 15 cm -3 The upper transition layer (207) is made of i-type InGaAs material, the thickness is 5-15nm, and the doping concentration is 1x10 15 cm -3 Left and right.
7. The high-performance photodetector chip epitaxial wafer as claimed in claim 1, wherein the P-type multi-quantum well absorption layer (208) is InGaAs/InGaAsP multi-quantum well material, and the doping concentration of the P-type doped multi-quantum well absorption layer is 1x10 18 cm -3 The total thickness is 50-100nm.
8. A method as claimed in claim 1The high-performance photodetector chip epitaxial wafer is characterized in that the upper waveguide layer (209) is made of p-type low-doped InGaAsP material, the thickness of the upper waveguide layer is 100-150nm, and the doping concentration is 2x10 16 cm -3 On the left and right sides, the P type barrier layer (210) is made of P type InGaAsP material, and the doping concentration is more than 1x10 19 cm -3 The total thickness is 20-30nm.
9. The high-performance photo-detector chip epitaxial wafer as claimed in claim 1, wherein the P-type capping layer (211) is P-type InP material with a doping concentration greater than 5x10 18 cm -3 And the total thickness is 1 micron.
10. The high-performance photodetector chip epitaxial wafer as claimed in claim 1, wherein the P-type contact layer (212) is a P-type InGaAs material with a doping concentration greater than 2x10 19 cm -3 The total thickness is 100-200nm.
CN202210966917.1A 2022-08-11 2022-08-11 High-performance light detector chip epitaxial wafer Pending CN115295646A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117276375A (en) * 2023-11-15 2023-12-22 芯辰半导体(苏州)有限公司 Photo-detector epitaxial wafer and preparation method and application thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117276375A (en) * 2023-11-15 2023-12-22 芯辰半导体(苏州)有限公司 Photo-detector epitaxial wafer and preparation method and application thereof

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