CN115295387A - Coil and semiconductor reaction equipment - Google Patents

Coil and semiconductor reaction equipment Download PDF

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Publication number
CN115295387A
CN115295387A CN202211013113.6A CN202211013113A CN115295387A CN 115295387 A CN115295387 A CN 115295387A CN 202211013113 A CN202211013113 A CN 202211013113A CN 115295387 A CN115295387 A CN 115295387A
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coil
unit
section
coil unit
adjacent
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王美玲
田才忠
余先炜
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Shengjisheng Semiconductor Technology Beijing Co ltd
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Shengjisheng Semiconductor Technology Beijing Co ltd
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Priority to CN202211013113.6A priority Critical patent/CN115295387A/en
Publication of CN115295387A publication Critical patent/CN115295387A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)

Abstract

The invention relates to the technical field of semiconductor manufacturing, and discloses a coil and a semiconductor reaction device, wherein the coil is formed by connecting at least two coil units in parallel and comprises a first coil section and a second coil section, the first coil section and the second coil section are respectively adjacent to the center of the coil, the current directions in the first coil section and the second coil section are opposite, the current directions in at least two coil sections nearest to the first coil section are the same in the direction from the center of the coil to the first coil section, and the current directions in at least two coil sections nearest to the second coil section are the same in the direction from the center of the coil to the second coil section. The distribution of the electromagnetic field generated by the coil can make the plasma be uniformly distributed.

Description

Coil and semiconductor reaction equipment
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a coil and semiconductor reaction equipment.
Background
A radio frequency coil of an Inductively Coupled Plasma (ICP) source is placed on the quartz louver to deliver Coupled electromagnetic energy to the Plasma. When certain radio frequency current is connected into the coil, the radio frequency current penetrates through a quartz skylight of the chamber, an induced magnetic field B (r, z, t) is generated in the adjacent area in the plasma, and the Faraday law is satisfied
Figure BDA0003811374680000011
The magnetic field B is induced in the reaction chamber to generate an induced radio frequency electric field E (r, z, t) in which electrons in the plasma are accelerated and collide with neutral gas molecules to be ionized, thereby coupling the radio frequency energy in the coil into the ionized gas and maintaining the discharge process of the plasma. Therefore, the distribution of the induced electromagnetic field in the cavity will directly affect the distribution uniformity of the plasma. The induced magnetic field generated by the prior art coil designs is generally not uniform in plasma distribution.
Disclosure of Invention
The invention aims to provide a coil and a semiconductor reaction device, so that an induced electromagnetic field generated by the coil drives plasma to be uniformly distributed.
The purpose of the present invention is achieved by the following technical means. According to the invention, the coil is formed by connecting at least two coil units in parallel, and comprises a first coil section and a second coil section, wherein the first coil section and the second coil section are respectively adjacent to the center of the coil, the current directions in the first coil section and the second coil section are opposite, the current directions in at least two coil sections nearest to the first coil section are the same in the direction from the center of the coil to the outside of the first coil section, and the current directions in at least two coil sections nearest to the second coil section are the same in the direction from the center of the coil to the outside of the second coil section.
In some embodiments, the coil is formed by connecting a first coil unit and a third coil unit in parallel, and then connecting a second coil unit in parallel, the first coil unit and the third coil unit are identical in structure, the first coil unit and the third coil unit are respectively arranged on two sides of the second coil unit, the first coil unit is adjacent to the second coil unit, and the third coil unit is adjacent to the second coil unit.
In some embodiments, the first coil unit and the third coil unit each extend counterclockwise from the first end to the second end, and the second coil unit extends clockwise from the first end to the second end.
In some embodiments, the first coil unit and the third coil unit each extend clockwise from the first end to the second end and the second coil unit extends counterclockwise from the first end to the second end.
In some embodiments, the second coil unit includes the first coil section and the second coil section, the first coil unit and the second coil unit have adjacent coil sections at an outermost turn, directions of currents in the adjacent coil sections of the first coil unit and the second coil unit are the same as each other, the third coil unit and the second coil unit have adjacent coil sections at an outermost turn, and directions of currents in the adjacent coil sections of the third coil unit and the second coil unit are the same as each other.
In some embodiments, the coil is formed by connecting in parallel a first coil portion and a second coil portion, the first coil portion being of the same structure as the second coil portion and being centrosymmetric about a center of the coil, the first coil portion being disposed adjacent to the second coil portion.
In some embodiments, the first coil portion and the second coil portion each extend clockwise from the first end to the second end from the outside to the inside.
In some embodiments, the first coil portion and the second coil portion each extend from a first end to a second end, outside-in, counterclockwise.
In some embodiments, the first coil portion and the second coil portion have adjacent coil sections at an outermost turn, directions of currents in the adjacent coil sections of the first coil portion and the second coil portion being opposite to each other.
The invention also provides semiconductor reaction equipment which comprises the coil.
The beneficial effects of the invention at least comprise:
1. the coil is formed by connecting at least two coil units in parallel, so that the inductance of the coil can be reduced, the effective voltage of the coil is reduced, the generated electrostatic field is reduced, the induced electromagnetic field is increased, a smaller capacitive coupling component is ensured between the coil and plasma, the inductive coupling component is increased, and the energy coupling efficiency is improved.
2. According to the invention, the first coil section and the second coil section are adjacent to the center of the coil, the current directions in the first coil section and the second coil section are opposite, the current directions in at least two coil sections nearest to the first coil section are the same, and the current directions in at least two coil sections nearest to the second coil section are the same, so that weaker electric field distribution is formed in the center of the reaction chamber, stronger electric field distribution is formed on two sides close to the center of the coil, the plasma is driven by the stronger electric field distribution formed on the two sides to move towards the center of the coil with weaker electric field distribution, and high-density and uniform plasma is formed in the middle area of the vacuum chamber.
3. The coil has simple structure and easy expansion of the coverage area, and the plasma processing area can be expanded from the diameter of 200mm to the diameter of 300mm or more by the coil design and other means for improving the plasma uniformity.
4. The coil of the present invention can form uniform high density plasma by increasing the spacing between the first coil section and the second coil section.
5. The coil is formed by connecting the first coil unit and the third coil unit in parallel and then connecting the first coil unit and the third coil unit in parallel, so that the current introduced into the whole formed by connecting the first coil unit and the third coil unit in parallel can be independently adjusted, the current introduced into the second coil unit can be independently adjusted, and the density of plasma generated by the coil can be conveniently adjusted by independently adjusting the current.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understandable, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
FIG. 1 shows a schematic cross-sectional view of a plasma chamber including a coil;
fig. 2 is a schematic structural view of a coil according to a first embodiment of the present invention;
FIG. 3 is a schematic electrical circuit diagram of a coil according to a first embodiment of the present invention;
FIG. 4 is a graph of an electric field profile produced by a coil according to a first embodiment of the present invention;
FIG. 5 is a distribution plot of the plasma generated by the coil according to the first embodiment of the present invention;
fig. 6 is a schematic structural view of a coil according to a second embodiment of the present invention;
fig. 7 is an electric field distribution diagram of the coil according to the first embodiment of the present invention after increasing the number of turns of the second coil unit;
fig. 8 is a distribution diagram of plasma generated by the coil according to the first embodiment of the present invention after increasing the number of turns of the second coil unit;
FIG. 9 is a distribution plot of plasma generated by a coil according to a first embodiment of the invention after increasing the spacing between the first and second coil sections;
fig. 10 is a schematic structural view of a coil according to a third embodiment of the present invention;
FIG. 11 is a circuit schematic of a coil according to a third embodiment of the present invention;
fig. 12 is a schematic view of a structure of a coil according to a fourth embodiment of the present invention.
Detailed Description
To further illustrate the technical means of the present invention, the following detailed description of the coil and the semiconductor reaction apparatus according to the present invention is provided with reference to the accompanying drawings and preferred embodiments.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "including" and "having," and any variations thereof, in the description and claims of this application and the description of the above figures are intended to cover non-exclusive inclusions.
In the description of the embodiments of the present application, the technical terms "first" and "second", etc. are used only to distinguish different objects, and are not to be construed as indicating or implying relative importance or implicitly indicating the number, specific order or primary-secondary relationship of the technical features indicated. In the description of the embodiments of the present application, "a plurality" means two or more unless specifically defined otherwise.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein may be combined with other embodiments.
As shown in fig. 1, fig. 1 shows a schematic cross-sectional view of a plasma chamber including a coil. The plasma chamber 100 includes a reaction space 104, wherein the reaction space 104 is formed by a chamber outer wall 102 and a chamber ceiling 112, and the chamber ceiling 112 is made of quartz. A stage 106 for placing a silicon wafer 118 is disposed inside the reaction space 104. Although not shown in the figures, the stage 106 may have a heater disposed therein. Coil 200 is disposed above chamber skylight 112. An external RF power source 114 is connected to the coil 200 through a matching unit 115 to supply power to the coil 200, an electromagnetic field is generated in the reaction space 104 after the coil 200 is powered on, the process gas (e.g., nitrogen) introduced into the reaction space 104 through the gas inlet 103 is ionized into plasma by the electromagnetic field generated by the coil 200, and the excess gas can be pumped out of the reaction space 104 through a vacuum pump (not shown). A pressure detector (not shown) may be connected to the reaction space 104 to monitor the chamber pressure in real time.
It is understood that the plasma chamber 100 may be configured to admit gas from left to right, from all around, from up to down as desired, or from other gas inlets, such as from the center of the top of the chamber. The invention does not impose any limitations on the shape of the plasma chamber 100. The shape of the plasma chamber 100 may be circular, rectangular, or other irregular shapes.
The coil 200 of the present invention is formed by connecting at least two coil units in parallel, wherein a first end i of each coil unit is connected to a matcher 115, the matcher 115 is connected to a radio frequency power supply 114, a second end o of each coil unit is grounded, and the radio frequency power supply 114 is used for supplying current to each coil unit. Each coil unit is spirally wound in a plane by an antenna wire to be formed. More specifically, assuming that the first direction x is a horizontal direction and a direction perpendicular to the first direction x in a plane is a second direction y, the antenna wire continuously extends in the first direction and the second direction in the plane to form a coil unit. Each coil unit includes a plurality of coil sections, "coil section" representing individual portions of the coil unit extending in the same direction.
As shown in fig. 2, 6, 10 and 11, the coil 200 according to the present invention includes a first coil section 2001 and a second coil section 2002, the first coil section 2001 and the second coil section 2002 are respectively adjacent to the center of the coil 200, the directions of currents in the first coil section 2001 and the second coil section 2002 are opposite, in the remaining coil sections, the directions of currents in at least two coil sections closest to the first coil section 2001 are the same and the same as the directions of currents in the first coil section 2001 in a direction outward from the center of the coil 200 perpendicular to the first coil section 2001, and the directions of currents in at least two coil sections closest to the second coil section 2002 are the same and the same as the directions of currents in the second coil section 2002 in a direction outward from the center of the coil 200 toward the second coil section 2002.
In the present invention, "adjacent" means that the coils are close to each other, the center of the coil 200 is the innermost portion of the coil 200, and "extending outward from the center of the coil 200" is defined as "inside-out", whereas "outside-in" is defined. For example, extending from the first end of the coil unit to the center of the coil 200 is "outside-in".
The coil 200 of the present invention is formed by connecting at least two coil units in parallel, which can reduce the inductance of the coil 200, i.e. reduce the effective voltage of the coil 200, thereby reducing the generated electrostatic field, increasing the induced electromagnetic field, ensuring that the coil and the plasma have smaller capacitive coupling component, increasing the inductive coupling component, and improving the energy coupling efficiency.
According to the invention, the first coil section 2001 and the second coil section 2002 are adjacent to the center of the coil 200, the current directions in the first coil section 2001 and the second coil section 2002 are opposite, the current directions in at least two coil sections nearest to the first coil section 2001 are the same, and the current directions in at least two coil sections nearest to the second coil section 2002 are the same, so that a weaker electric field distribution is formed in the center of the coil 200, stronger electric field distributions are formed on two sides close to the center of the coil 200, and the plasma is driven by the stronger electric field distributions formed on the two sides to move towards the center of the coil 200 with the weaker electric field distribution, so that high-density and uniform plasma is formed in the middle area of the vacuum chamber.
The coil 200 of the present invention has a simple structure and a coverage area that is easily expanded, and the plasma processing area can be expanded from 200mm diameter to 300mm diameter or larger by coil design and other means for improving plasma uniformity.
In one or more embodiments, as shown in fig. 2 and 3, the coil 200 is formed by connecting the first coil unit 201 and the third coil unit 203 in parallel, and then connecting the first coil unit 201 and the third coil unit 203 in parallel, and the first coil unit 201 and the third coil unit 203 have the same structure, and since the first coil unit 201 and the third coil unit 203 are connected in parallel to form a whole in parallel and then connected in parallel with the second coil unit 202, the current flowing through the whole formed by connecting the first coil unit 201 and the third coil unit 203 in parallel can be independently adjusted, the current flowing through the second coil unit 202 can be independently adjusted, and the adjustment of the density of the plasma generated by the coil 200 is facilitated by independently adjusting the current.
Specifically, the first coil unit 201 and the third coil unit 203 are respectively disposed at both sides of the second coil unit 202, and the first coil unit 201 is adjacent to the second coil unit 202, and the third coil unit 203 is adjacent to the second coil unit 202. In this embodiment, the center C of the coil 200 is located between the first coil unit 201 and the third coil unit 203, that is, located at the center of the second coil unit 202, the second coil unit 202 includes a first coil section 2001 and a second coil section 2002, the first coil section 2001 and the second coil section 2002 are adjacent to the center of the coil 200, and the directions of currents in the first coil section 2001 and the second coil section 2002 are opposite.
The first coil unit 201 and the second coil unit 202 have adjacent coil sections at the outermost turn, and the directions of currents in the adjacent coil sections of the first coil unit 201 and the second coil unit 202 are the same as each other. The third coil unit 203 and the second coil unit 202 have adjacent coil sections at the outermost turns, and the directions of currents in the adjacent coil sections of the third coil unit 203 and the second coil unit 202 are the same as each other. Further, in the present embodiment, in a direction outward from the center of the coil 200 toward the first coil section 2001, the direction of current in the coil sections distant from the two coil sections from the first coil section 2001 is the same as the direction of current in the adjacent coil sections of the first coil unit 201 and the second coil unit 202, and likewise, in a direction outward from the center of the coil 200 toward the second coil section 2002, the direction of current in the coil sections distant from the two coil sections from the second coil section 2002 is the same as the direction of current in the adjacent coil sections of the third coil unit 203 and the second coil unit 202. The distribution of the electric field generated by the coil 200 of this embodiment is shown in fig. 4, and the distribution of the plasma generated by the coil 200 of this embodiment is shown in fig. 5.
In one or more embodiments, as shown in fig. 6, the coil 200 is formed by connecting the first coil unit 201 and the third coil unit 203 in parallel, and then connecting the first coil unit 201 and the third coil unit 203 in parallel, the first coil unit 201 and the third coil unit 203 have the same structure, and the circuit diagram of this embodiment is the same as the circuit diagram shown in fig. 3. Specifically, the first coil unit 201 and the third coil unit 203 are respectively disposed at both sides of the second coil unit 202, the first coil unit 201 is adjacent to the second coil unit 202, and the third coil unit 203 is adjacent to the second coil unit 202. In the embodiment, the center C of the coil 200 is located between the first coil unit 201 and the third coil unit, that is, located at the center of the second coil unit 202, the second coil unit 202 includes a first coil section 2001 and a second coil section 2002, the first coil section 2001 and the second coil section 2002 are adjacent to the center of the coil 200, and the directions of currents in the first coil section 2001 and the second coil section 2002 are opposite.
The first coil unit 201 and the second coil unit 202 have adjacent coil sections at the outermost turns, and the directions of currents in the adjacent coil sections of the first coil unit 201 and the second coil unit 202 are the same as each other. The third coil unit 203 and the second coil unit 202 have adjacent coil sections at the outermost turns, and the directions of currents in the adjacent coil sections of the third coil unit 203 and the second coil unit 202 are the same as each other. Further, in the present embodiment, in a direction outward from the center of the coil 200 toward the first coil section 2001, the direction of current in the coil sections distant from the two coil sections from the first coil section 2001 is the same as the direction of current in the adjacent coil sections of the first coil unit 201 and the second coil unit 202, and likewise, in a direction outward from the center of the coil 200 toward the second coil section 2002, the direction of current in the coil sections distant from the two coil sections from the second coil section 2002 is the same as the direction of current in the adjacent coil sections of the third coil unit 203 and the second coil unit 202.
In some other embodiments, the number of turns of the second coil unit 202 can be increased, so as to increase the density of the plasma generated by the coil 200, and taking the embodiment shown in fig. 2 as an example, after increasing the number of turns of the second coil unit 202 located at the center, the electric field generated by the coil 200 is distributed as shown in fig. 7, and the distribution of the generated plasma is shown in fig. 8.
In some other embodiments, the spacing between the first coil section 2001 and the second coil section 2002 may be increased to enable formation of a uniform high density plasma, and for example, in the embodiment shown in fig. 2, the plasma generated after increasing the spacing between the first coil section 2001 and the second coil section 2002 is distributed as shown in fig. 9. Preferably, the distance between the first coil section 2001 and the second coil section 2002 is between 32mm-220 mm.
In one or more embodiments, as shown in fig. 10 and 11, the coil 200 is formed by connecting the first coil portion 204 and the second coil portion 205 in parallel, the first coil portion 204 and the second coil portion 205 have the same structure and are symmetric with respect to the center C of the coil 200, and since the first coil portion 204 and the second coil portion 205 are connected in parallel, the current flowing through the whole formed by connecting the first coil portion 204 and the second coil portion 205 in parallel can be independently adjusted. Specifically, the first coil portion 204 and the second coil portion 205 are disposed adjacent to each other, the first coil portion 204 and the second coil portion 205 each extend in a clockwise direction from a first end to a second end from the outside to the inside, the first coil portion 204 and the second coil portion 205 have adjacent coil sections at the outermost turn, and directions of currents in the adjacent coil sections of the first coil portion 204 and the second coil portion 205 are opposite to each other.
The adjacent coil sections of the first coil portion 204 and the second coil portion 205 are a first coil section 2001 and a second coil section 2002, respectively, the first coil section 2001 and the second coil section 2002 are adjacent to the center of the coil 200, and of the remaining coil sections, the direction of current flow in the two coil sections nearest to the first coil section 2001 is the same in a direction from the center of the coil 200 perpendicular to the first coil section 2001 outward, and the direction of current flow in the two coil sections nearest to the second coil section 2002 is the same in a direction from the center of the coil 200 perpendicular to the second coil section 2002 outward.
In one or more embodiments, as shown in fig. 12, the coil 200 is formed by connecting a first coil portion 204 and a second coil portion 205 in parallel, the first coil portion 204 and the second coil portion 205 have the same structure and are symmetrical with respect to the center of the coil 200, and the circuit diagram of the embodiment is the same as that shown in fig. 11. Specifically, the first coil portion 204 and the second coil portion 205 are disposed adjacent to each other, the first coil portion 204 and the second coil portion 205 each extend counterclockwise from the outside to the inside from the first end to the second end, and the first coil portion 204 and the second coil portion 205 have adjacent coil sections at the outermost turn, and directions of currents in the adjacent coil sections of the first coil portion 204 and the second coil portion 205 are opposite to each other.
The adjacent coil sections of the first coil portion 204 and the second coil portion 205, that is, the first coil section 2001 and the second coil section 2002, respectively, the first coil section 2001 and the second coil section 2002 are adjacent to the center of the coil 200, and of the remaining coil sections, the current direction is the same in the two coil sections nearest to the first coil section 2001 in the direction perpendicular to the first coil section 2001 from the center of the coil 200, and the current direction is the same in the two coil sections nearest to the second coil section 2002 in the direction perpendicular to the second coil section 2002 from the center of the coil 200.
In the specific embodiment of the present invention, the number of turns of the coil units is not particularly limited, and the number of turns of each coil unit can be adjusted as needed. The specific dimensions of the coil 200 may be determined according to the size of the silicon wafer.
Each coil unit according to the present invention may be cooled by water, thereby improving ionization efficiency.
It is understood that the coil 200 of the present invention can be either a planar coil or a solid coil.
The invention also provides semiconductor reaction equipment which utilizes the coil to generate plasma.
The previous description of the disclosed aspects is provided to enable any person skilled in the art to practice the present invention. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other aspects without departing from the scope of the invention. Thus, the present invention is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. A coil formed by at least two coil units connected in parallel, comprising a first coil section and a second coil section, the first coil section and the second coil section being adjacent to a center of the coil, respectively, current directions in the first coil section and the second coil section being opposite, current directions in at least two coil sections nearest to the first coil section being the same in a direction from the center of the coil outward toward the first coil section, and current directions in at least two coil sections nearest to the second coil section being the same in a direction from the center of the coil outward toward the second coil section.
2. The coil according to claim 1, wherein the coil is formed by connecting a first coil unit and a third coil unit in parallel and then connecting a second coil unit in parallel, the first coil unit and the third coil unit have the same structure, the first coil unit and the third coil unit are respectively disposed on both sides of the second coil unit and the first coil unit is adjacent to the second coil unit, and the third coil unit is adjacent to the second coil unit.
3. The coil of claim 2, wherein the first coil unit and the third coil unit each extend counterclockwise from the first end to the second end, and wherein the second coil unit extends clockwise from the first end to the second end.
4. The coil of claim 2, wherein the first coil unit and the third coil unit each extend clockwise from the first end to the second end and the second coil unit extends counterclockwise from the first end to the second end.
5. A coil according to any one of claims 3 or 4, characterized in that the second coil unit comprises the first coil section and the second coil section, the first coil unit and the second coil unit having adjacent coil sections at the outermost turn, the directions of currents in the adjacent coil sections of the first coil unit and the second coil unit being the same as each other, the third coil unit and the second coil unit having adjacent coil sections at the outermost turn, the directions of currents in the adjacent coil sections of the third coil unit and the second coil unit being the same as each other.
6. The coil of claim 1, wherein the coil is formed by connecting in parallel a first coil portion and a second coil portion, the first coil portion being of the same structure as the second coil portion and being centrosymmetric about a center of the coil, the first coil portion being disposed adjacent to the second coil portion.
7. The coil of claim 6, wherein the first coil portion and the second coil portion each extend clockwise from a first end to a second end from outside to inside.
8. The coil of claim 6, wherein the first coil portion and the second coil portion each extend counterclockwise from a first end to a second end from outside to inside.
9. The coil according to any one of claims 7 or 8, wherein the first coil portion and the second coil portion have adjacent coil sections at outermost turns, and directions of currents in the adjacent coil sections of the first coil portion and the second coil portion are opposite to each other.
10. A semiconductor reaction apparatus, characterized by comprising a coil according to any one of claims 1 to 9.
CN202211013113.6A 2022-08-23 2022-08-23 Coil and semiconductor reaction equipment Pending CN115295387A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211013113.6A CN115295387A (en) 2022-08-23 2022-08-23 Coil and semiconductor reaction equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211013113.6A CN115295387A (en) 2022-08-23 2022-08-23 Coil and semiconductor reaction equipment

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CN115295387A true CN115295387A (en) 2022-11-04

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Country Status (1)

Country Link
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